CN110099344A - A kind of MEMS structure - Google Patents
A kind of MEMS structure Download PDFInfo
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- CN110099344A CN110099344A CN201910415702.9A CN201910415702A CN110099344A CN 110099344 A CN110099344 A CN 110099344A CN 201910415702 A CN201910415702 A CN 201910415702A CN 110099344 A CN110099344 A CN 110099344A
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 100
- 239000000463 material Substances 0.000 claims description 19
- 230000011218 segmentation Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 10
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- 238000006073 displacement reaction Methods 0.000 abstract description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Micromachines (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
This application provides a kind of MEMS (MEMS) structures, comprising: substrate has the cavity and the first groove of neighbouring setting, and first groove is in the periphery of the cavity；Piezoelectric anisotropy vibration level, it is formed in the surface of the cavity and is located among first groove, wherein, Piezoelectric anisotropy vibration level described in the substrate supports of part between first groove and the cavity, wherein, multiple through-holes through the Piezoelectric anisotropy vibration level are distributed in the whole surface of the Piezoelectric anisotropy vibration level.The MEMS structure improves displacement and deformation of the Piezoelectric anisotropy vibration level under acoustic pressure effect, reduces residual stress, and then improve the sensitivity of MEMS structure.
Description
Technical field
This application involves technical field of semiconductors, it particularly relates to a kind of MEMS (Microelectro
Mechanical Systems's writes a Chinese character in simplified form, i.e. MEMS) structure.
Background technique
MEMS microphone (microphone) mainly includes condenser type and two kinds of piezoelectric type.MEMS piezoelectric microphone is to utilize micro- electricity
The microphone of sub- mechanical system technique and the preparation of piezoelectric membrane technology, due to using skills such as semiconductor planar technique and silicon bulk fabrications
Art, so its size is small, small in size, consistency is good.Bias voltage, work temperature are not needed also relative to condenser microphone simultaneously
It is big to spend range, the advantages that dust-proof, waterproof, but its remolding sensitivity is lower, restricts the development of MEMS piezoelectric microphone.Wherein, it shakes
The residual stress of dynamic film is a low major reason of its sensitivity greatly.
Aiming at the problem that residual stress and raising vibrating membrane deformation for how reducing piezoelectric type MEMS structure in the related technology,
Currently no effective solution has been proposed.
Summary of the invention
For the problem that residual stress in the related technology is larger, the application proposes a kind of MEMS structure, can be effectively reduced
Residual stress.
The technical solution of the application is achieved in that
According to the one aspect of the application, a kind of MEMS (MEMS) structure is provided, comprising:
Substrate has the cavity and the first groove of neighbouring setting, and first groove is in the periphery of the cavity；
Piezoelectric anisotropy vibration level is formed in the surface of the cavity and is located among first groove, wherein position
Piezoelectric anisotropy vibration level described in the substrate supports of part between first groove and the cavity, wherein in institute
State the multiple through-holes being distributed in the whole surface of Piezoelectric anisotropy vibration level through the Piezoelectric anisotropy vibration level.
Wherein, the Piezoelectric anisotropy vibration level includes: vibration supporting layer, is formed on the substrate；First electrode layer,
It is formed in above the vibration supporting layer；First piezoelectric layer is formed in above the first electrode layer；The second electrode lay is formed
Above first piezoelectric layer.
Wherein, the central point that the segmentation straight line that the multiple through-hole is constituted passes through the Piezoelectric anisotropy vibration level is connected,
And the Piezoelectric anisotropy vibration level is divided into multiple regions.
Wherein, the multiple through-hole on at least one segmentation straight line is set as equidistant.
Wherein, the shape of the multiple through-hole include circle, it is ellipse, polygon, petal.
Wherein, the multiple through-hole is continuous through the second electrode lay, first piezoelectric layer, the first electrode layer
With the vibration supporting layer.
Wherein, the second groove extends to the lower surface of the first electrode layer from the upper surface of the second electrode lay, and
And the multiple through-hole is formed in second groove, so that the multiple through-hole only runs through the vibration supporting layer.
Wherein, the first electrode layer and the second electrode lay have at least two mutually isolated subregions, mutually right
The subregion of the first electrode layer and the second electrode lay answered constitutes electrode layer pair, and multiple electrode layers are to successively going here and there
Connection.
Wherein, it is described vibration supporting layer include silicon nitride, silica, monocrystalline silicon, polysilicon constitute single layer or multilayer
Structure of composite membrane.
Wherein, the vibration supporting layer includes the electrode material of piezoelectric material layer and the upper and lower positioned at the piezoelectric material layer
The bed of material, wherein the piezoelectric material layer includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate (PZT) or Ca-Ti ore type
One or more layers in piezoelectric film.
In the MEMS structure of above embodiments, Piezoelectric anisotropy vibration level is formed in the surface of cavity and is located at first
Among groove, so that the section substrate materials for support Piezoelectric anisotropy vibration level between the first groove and cavity, so that
Piezoelectric anisotropy vibration level is changed into class simply-supported state by clamped state, and this improves Piezoelectric anisotropy vibration levels to act in acoustic pressure
Under displacement and deformation, reduce residual stress, and then improve the sensitivity of MEMS structure.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the application
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
When reading in conjunction with the accompanying drawings, each side of the application may be better understood according to the following detailed description
Face.It is emphasized that all parts are not drawn on scale, and are for illustration purposes only according to the standard practices of industry.It is real
On border, in order to clearly discuss, the size of all parts can arbitrarily increase or reduce.
Fig. 1 shows the sectional view of MEMS structure in accordance with some embodiments；
Fig. 2 shows the top views of MEMS structure in accordance with some embodiments；
Fig. 3 to Fig. 9 shows the sectional view in the intermediate stage of manufacture MEMS structure in accordance with some embodiments；
Figure 10 shows the flow chart of manufacture MEMS structure in accordance with some embodiments.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those of ordinary skill in the art's every other embodiment obtained belong to the application protection
Range.
Following disclosure provides many different embodiments or example to realize the different characteristic of the application.Below will
The particular instance of element and arrangement is described to simplify the application.Certainly these are only that example is not intended to be limiting.For example, element
Size is not limited to disclosed range or value, but performance needed for possibly relying on process conditions and/or device.In addition, with
In lower description, above second component or the upper formation first component may include that the first component and second component directly contact shape
At embodiment, and also may include additional component can be formed between the first component and second component so that
The embodiment that the first component and second component can be not directly contacted with.It, can be any in different sizes in order to simplified and clear
Draw all parts in ground.
In addition, for ease of description, spatially relative term such as " ... under (beneath) ", " in ... lower section
(below) ", " lower part (lower) ", " ... on (above) ", " top (upper) " etc. can be used for describing attached drawing herein
Shown in an element or component and another (or other) element or component relationship.Spatially relative term is intended to include
Other than orientation shown in the drawings, the different direction of the device in use or in operation.Device can otherwise be determined
To (be rotated by 90 ° or in other directions), spatial relative descriptor used herein can similarly make respective explanations.In addition, art
Language " by ... it is made " it can mean " comprising " or " consist of ".
According to an embodiment of the present application, a kind of MEMS structure 100 is provided, residual stress can reduced and improving vibration
While membrane strain, reduce low frequency sound leakage, improves the stability of microphone work and preparation.
Referring to Fig. 1, the MEMS structure 100 according to one embodiment of the application is shown.It is described in detail below to be somebody's turn to do
MEMS structure 100.
MEMS structure 100 includes substrate 10, wherein and substrate 10 has the cavity 11 and the first groove 12 of neighbouring setting, the
One groove 12 is formed in the periphery of cavity 11.Substrate 10 includes silicon or any suitable silicon base compound or derivative (such as silicon
Polysilicon on chip, SOI, SiO2/Si).
Piezoelectric anisotropy vibration level 20 is formed in the surface of cavity 11 and is located among the first groove 12.And in piezoelectricity
Multiple through-holes 25 through the Piezoelectric anisotropy vibration level 20 are distributed in the whole surface of complex vibration layer 20.
In the MEMS structure 100 of above embodiments, Piezoelectric anisotropy vibration level 20 be formed in the surface of cavity 11 and
Among the first groove 12, so that the section substrate materials for support Piezoelectric anisotropy between the first groove 12 and cavity 11 shakes
Dynamic layer 20, so that Piezoelectric anisotropy vibration level 20 is changed into class simply-supported state by clamped state, this improves Piezoelectric anisotropies
Displacement and deformation of the vibration level 20 under acoustic pressure effect, and then improve the sensitivity of MEMS structure 100.
In some embodiments, Piezoelectric anisotropy vibration level 20 includes the vibration supporting layer 24 for being formed in 10 top of substrate, shape
At the first electrode layer 21 above vibration supporting layer 24, it is formed in the first piezoelectric layer 22 of 21 top of first electrode layer and is formed
The second electrode lay 23 above the first piezoelectric layer 22.First piezoelectric layer 22 can by the pressure conversion of application at voltage, and
Generated voltage can be sent to other integrated circuit device by one electrode layer 21 and the second electrode lay 23.
In some embodiments, vibration supporting layer 24 includes silicon nitride (Si3N4), silica, monocrystalline silicon, polysilicon composition
Single layer or MULTILAYER COMPOSITE membrane structure or other suitable backing materials.
In some embodiments, vibration supporting layer 24 may include piezoelectric material layer and positioned at the piezoelectric material layer up and down
The electrode material layer of side.Wherein, piezoelectric material layer includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate (PZT), calcium titanium
One or more layers or other suitable material in mine type piezoelectric film.In this case, which plays simultaneously
The effect of support and piezoelectricity.
In some embodiments, the first piezoelectric layer 22 includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate
(PZT), perouskite type piezoelectric film or other suitable materials.First electrode layer 21 and the second electrode lay 23 include aluminium, gold, platinum,
Molybdenum, titanium, chromium and composite membrane that they are formed or other suitable materials.
Referring to fig. 2, in some embodiments, Piezoelectric anisotropy vibration level 20, which has, is continuous through vibration supporting layer 24, first
Multiple through-holes 25 of electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23.In some embodiments, it is vibrated in Piezoelectric anisotropy
The second groove (not shown) is formed on layer 20, which extends to first electrode from the upper surface of the second electrode lay 23
The lower surface of layer 21, and multiple through-holes 25 are formed in the second groove, so that multiple through-holes 25 are only through vibration supporting layer 24.
In some embodiments, the segmentation straight line that multiple through-holes 25 are constituted is connected to pass through in Piezoelectric anisotropy vibration level 20
Heart point, and Piezoelectric anisotropy vibration level 20 is divided into multiple regions, multiple region is mutually indepedent, and each independent area
The piezoelectric thin film transducer of domain composition class cantilever beam structure.In the case, it is vibrated in the Piezoelectric anisotropy with multiple through-holes 25
In layer 20, the edge in each region only has part to connect, so that the stress of entire Piezoelectric anisotropy vibration level 20 is discharged.And
And multiple through-holes 25 can discharge the existing residual stress during the deposition process of Piezoelectric anisotropy vibration level 20, it is outstanding in combination with class
Arm girder construction, so that the Piezoelectric anisotropy vibration level 20 of " tight " becomes " soft ", in this way under the effect of same acoustic pressure, Piezoelectric anisotropy vibration
Each region of dynamic layer 20 obtains biggish displacement and strain.It is worth noting that, Fig. 2 illustrates only five through-holes 25,
But in order to preferably achieve the effect that class cantilever beam structure, more through-holes 25 can be set on each segmentation straight line.
In embodiment as shown in Figure 2, Piezoelectric anisotropy vibration level 20 has been divided into four regions by two segmentation straight lines.?
In some embodiments, multiple through-holes 25 at least one segmentation straight line are set as equidistantly, so that Piezoelectric anisotropy vibrates
Stress distribution on layer 20 obtains more uniform.In some embodiments, the shape of multiple through-holes 25 includes round, oval, more
It is side shape, petal.
In some embodiments, first electrode layer 21 and the second electrode lay 23 have at least two mutually isolated subregions,
The subregion of mutual corresponding first electrode layer 21 and the second electrode lay 23 constitutes electrode layer pair, and multiple electrodes layer is to being sequentially connected in series.
Therefore, the piezoelectric thin film transducer of multiple independent class cantilever beam structures realizes series connection electrically, to further increase
The sensitivity of MEMS structure 100.
MEMS structure 100 based on above embodiments, reduces the residual stress of Piezoelectric anisotropy vibration level 20, improves pressure
The deformation for closing vibration level 20 under acoustic pressure effect is replied by cable, to improve the sensitivity of MEMS structure 100.
Correspondingly, present invention also provides a kind of manufacture MEMS (MEMS) structures in conjunction with referring to Fig. 3 to Figure 10
Method, comprising:
Synthesis is referring to Fig. 3-4 and Figure 10, and step S101: deposition forms Piezoelectric anisotropy vibration level on the front of substrate 10
20。
Step S102: the method for forming Piezoelectric anisotropy vibration level 20 includes: the deposition formation vibration supporting layer on substrate 10
24, first electrode material is deposited on vibration supporting layer 24, and patterned first electrodes material to be to form first electrode layer 21,
And exposed portion vibrates supporting layer 24.
Referring to Fig. 5 and Figure 10, step S103: piezoelectric material is formed in 21 disposed thereon of first electrode layer, and is patterned
Piezoelectric material is to form the first piezoelectric layer 22.
Referring to Fig. 6 and Figure 10, step S104: second electrode material is formed in 22 disposed thereon of the first piezoelectric layer, and is schemed
Case second electrode material is to form the second electrode lay 23.
Referring to Fig. 7 and Figure 10, step S105: in some embodiments, etching, which is formed, continuously penetrates vibration supporting layer 24, the
One electrode layer 21, the first piezoelectric layer 22, the second electrode lay 23 multiple through-holes 25.In some embodiments, it shakes in Piezoelectric anisotropy
Etching forms the second groove (not shown) on dynamic layer 20, which extends to the from the upper surface of the second electrode lay 23
The lower surface of one electrode layer 21, and multiple through-holes 25 are formed in the second groove, so that multiple through-holes 25 are only through vibration branch
Support layer 24.
In some embodiments, the segmentation straight line that multiple through-holes 25 are constituted is connected to pass through in Piezoelectric anisotropy vibration level 20
Heart point, and Piezoelectric anisotropy vibration level 20 is divided into multiple regions.Multiple region is mutually indepedent, and each independent area
The piezoelectric thin film transducer of domain composition class cantilever beam structure.
In some embodiments, multiple through-holes 25 at least one segmentation straight line are set as equidistant.In some implementations
In example, the shapes of multiple through-holes 25 includes circle, ellipse, polygon, petal.
Step S106: in first electrode layer 21, the periphery of the first piezoelectric layer 22 and the second electrode lay 23, in the vibration of exposing
Etching forms the first groove 12 extended in substrate 10 on supporting layer 24.So that Piezoelectric anisotropy vibration level 20 is turned by clamped state
Become class simply-supported state, this improves displacement and deformation of the Piezoelectric anisotropy vibration level 20 under acoustic pressure effect, and then improve
The sensitivity of MEMS structure.
Referring to Fig. 8-9 and Figure 10, step S107: the back side of etching substrate 10 is to form cavity 11, the setting of the first groove 12
In the periphery of cavity 11.Also, vibrate supporting layer 24, first electrode layer 21, the first piezoelectric layer 22 and the formation of the second electrode lay 23
Right above cavity 11.Particularly: by standard photolithography process the back side of substrate 10 be sequentially depositing to be formed insulating materials and
Photoresist patterns the photoresist to form mask layer, the insulating materials and substrate 10 of exposing is etched, to form cavity 11.
Then the insulating materials at the back side of substrate 10 is removed.
Further, the method for manufacturing MEMS device further include etch respectively first electrode layer 21 and the second electrode lay 23 with
Third groove (not shown) is formed, first electrode layer 21 and the second electrode lay 23 are isolated at least two points by third groove
The subregion of area, mutual corresponding first electrode layer 21 and the second electrode lay 23 constitutes electrode layer pair, is then sequentially connected in series multiple electricity
It is extremely right, so that the piezoelectric thin film transducer of multiple cantilever beam structures realizes series connection electrically, to further improve
The sensitivity of MEMS structure.
In conclusion, using the method for the manufacture MEMS structure, reducing pressure by means of the above-mentioned technical proposal of the application
It replies the residual stress for closing vibration level 20 by cable, deformation of the Piezoelectric anisotropy vibration level 20 under acoustic pressure effect is improved, to improve
The sensitivity of MEMS structure.
The foregoing is merely the preferred embodiments of the application, not to limit the application, all essences in the application
Within mind and principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.
Claims (10)
1. a kind of MEMS (MEMS) structure characterized by comprising
Substrate has the cavity and the first groove of neighbouring setting, and first groove is in the periphery of the cavity；
Piezoelectric anisotropy vibration level is formed in the surface of the cavity and is located among first groove, wherein is located at institute
State Piezoelectric anisotropy vibration level described in the substrate supports of the part between the first groove and the cavity, wherein in the pressure
It replies by cable and multiple through-holes through the Piezoelectric anisotropy vibration level is distributed in the whole surface for closing vibration level.
2. MEMS structure according to claim 1, which is characterized in that the Piezoelectric anisotropy vibration level includes:
Supporting layer is vibrated, is formed on the substrate；
First electrode layer is formed in above the vibration supporting layer；
First piezoelectric layer is formed in above the first electrode layer；
The second electrode lay is formed in above first piezoelectric layer.
3. MEMS structure according to claim 1, which is characterized in that connect the segmentation straight line that the multiple through-hole is constituted
Multiple regions are divided by the central point of the Piezoelectric anisotropy vibration level, and by the Piezoelectric anisotropy vibration level.
4. MEMS structure according to claim 3, which is characterized in that the multiple on at least one segmentation straight line
Through-hole is set as equidistant.
5. MEMS structure according to claim 1, which is characterized in that the shape of the multiple through-hole includes round, oval
It is shape, polygon, petal.
6. MEMS structure according to claim 2, which is characterized in that the multiple through-hole is continuous through the second electrode
Layer, first piezoelectric layer, the first electrode layer and the vibration supporting layer.
7. MEMS structure according to claim 2, which is characterized in that the second groove is from the upper surface of the second electrode lay
The lower surface of the first electrode layer is extended to, and the multiple through-hole is formed in second groove, so that described more
A through-hole only runs through the vibration supporting layer.
8. MEMS structure according to claim 2, which is characterized in that the first electrode layer and the second electrode lay tool
There are at least two mutually isolated subregions, the subregion composition electricity of the mutual corresponding first electrode layer and the second electrode lay
Pole layer is right, and multiple electrode layers are to being sequentially connected in series.
9. MEMS structure according to claim 2, which is characterized in that the vibration supporting layer include silicon nitride, silica,
The single layer or MULTILAYER COMPOSITE membrane structure that monocrystalline silicon, polysilicon are constituted.
10. MEMS structure according to claim 2, which is characterized in that the vibration supporting layer include piezoelectric material layer and
Positioned at the electrode material layer of the upper and lower of the piezoelectric material layer, wherein the piezoelectric material layer include zinc oxide, aluminium nitride,
One or more layers in organic piezoelectric film, lead zirconate titanate (PZT) or perouskite type piezoelectric film.
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| CN201910415702.9A CN110099344B (en) | 2019-05-18 | 2019-05-18 | MEMS structure |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110519679A (en) * | 2019-10-11 | 2019-11-29 | 安徽奥飞声学科技有限公司 | A kind of MEMS structure |
| CN111147993A (en) * | 2019-12-31 | 2020-05-12 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
| CN111787473A (en) * | 2020-06-30 | 2020-10-16 | 歌尔微电子有限公司 | Miniature microphone particle blocker and MEMS microphone |
| WO2021135109A1 (en) * | 2019-12-31 | 2021-07-08 | 潍坊歌尔微电子有限公司 | Dustproof structure, microphone packaging structure and electronic device |
| WO2021135120A1 (en) * | 2019-12-31 | 2021-07-08 | 潍坊歌尔微电子有限公司 | Dustproof structure, microphone packaging structure and electronic device |
| CN113438588A (en) * | 2021-07-28 | 2021-09-24 | 成都纤声科技有限公司 | Micro-electro-mechanical system microphone, earphone and electronic equipment |
| WO2021208137A1 (en) * | 2020-04-16 | 2021-10-21 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone |
| WO2022110442A1 (en) * | 2020-11-30 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone |
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