CN110098347A - OLED display panel and preparation method - Google Patents
OLED display panel and preparation method Download PDFInfo
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- CN110098347A CN110098347A CN201910352945.2A CN201910352945A CN110098347A CN 110098347 A CN110098347 A CN 110098347A CN 201910352945 A CN201910352945 A CN 201910352945A CN 110098347 A CN110098347 A CN 110098347A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
A kind of OLED display panel and preparation method, including flexible base board, TFT layer, anode metal layer, organic functional material layer, cathode metal layer, cap and thin-film encapsulation layer, for the cap between the cathode metal layer and the thin-film encapsulation layer, the cap is Al-Doped ZnO film.OLED display panel and preparation method provided by the present invention are provided with one layer of Al-Doped ZnO film between cathode metal layer and thin-film encapsulation layer, improve the light extraction efficiency of OLED display panel, further improve the display effect of OLED display.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of OLED display panels and preparation method.
Background technique
Traditional TFT-LCD (Thin Film Transistors-LCD display panel) technology, OLED (organic light-emitting diodes are compared at present
Pipe) there is the advantage that can be made into flexible device, it can be applicable to wearable device such as Intelligent bracelet, smartwatch, VR (Virtual
Reality, i.e. virtual reality) equipment, mobile phone, e-book and electronic newspaper, television set, the neck such as personal portable computer
Domain.Existing OLED display mainly uses thin film transistor (TFT) to drive, and can individually light to each pixel, has brightness
Height, high resolution are low in energy consumption, it is easy to accomplish the advantages that coloration and large-area displays.However, due in OLED display
The section and glass substrate of ITO (tin indium oxide) film and glass substrate and the interface of air can be totally reflected, and be caused
The light extraction efficiency of conventional OLED display is lower (about 20%), seriously constrains the development and application of OLED display.
In conclusion existing OLED display panel and preparation method, due to ito thin film and glass substrate section and
The interface of glass substrate and air can be totally reflected, and caused OLED display panel light extraction efficiency lower, further affected
The display effect of OLED display.
Summary of the invention
The present invention provides a kind of OLED display panel and preparation method, and can effectively promote OLED display panel goes out light efficiency
Rate, to solve existing OLED display panel and preparation method, due to the section and glass substrate of ito thin film and glass substrate
It can be totally reflected with the interface of air, cause OLED display panel light extraction efficiency lower, further affected OLED and show
The technical issues of display effect of device.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of OLED display panel, including flexible base board, TFT layer, anode metal layer, organic functional material
Layer, cathode metal layer, cap and thin-film encapsulation layer, the cap are located at the cathode metal layer and the thin-film package
Between layer, the cap is Al-Doped ZnO film.
According to one preferred embodiment of the present invention, the cap is prepared in described through sol-gal process or magnetron sputtering method
On cathode metal layer.
According to one preferred embodiment of the present invention, the organic functional material layer includes the hole note being stacked from bottom to top
Enter transport layer, luminescent layer and electron injection transport layer.
According to one preferred embodiment of the present invention, the luminescent layer includes red photoresist, green photoresist and blue light resistance, institute
It states and is provided with black matrix" between any two in red photoresist, the green photoresist and the blue light resistance.
According to one preferred embodiment of the present invention, the material of the anode metal layer is ITO (tin indium oxide), the cathode gold
The material for belonging to layer is magnesium silver alloy.
The present invention also provides a kind of preparation methods of OLED display panel, which comprises
S10 provides flexible base board, forms TFT layer on the flexible base board；
S20 forms anode metal layer on the TFT layer；
S30 forms organic function material layer in the anode metal layer；
S40 forms cathode metal layer on the organic functional material layer；
S50, forms cap on the cathode metal layer, and the cap is Al-Doped ZnO film；
The flexible base board is packaged by S60, forms thin-film encapsulation layer.
According to one preferred embodiment of the present invention, the material of the anode metal layer is ITO (tin indium oxide), the anode gold
Belong to layer to prepare on the TFT layer by magnetron sputtering technique.
According to one preferred embodiment of the present invention, in the S30, the organic functional material layer includes that stacking from bottom to top is set
Hole injection/transport layer, luminescent layer and the electron injection transport layer set, the organic functional material layer pass through vacuum thermal evaporation
Technique is prepared in the anode metal layer.
According to one preferred embodiment of the present invention, in the S40, the material of the cathode metal layer is magnesium silver alloy, described
Cathode metal layer is prepared on the organic functional material layer by vacuum thermal evaporation technique.
According to one preferred embodiment of the present invention, in the S50, the cap passes through sol-gal process or magnetron sputtering
Technique is prepared on the cathode metal layer.
The invention has the benefit that OLED display panel provided by the present invention and preparation method, in cathode metal layer
It is provided with one layer of Al-Doped ZnO film between thin-film encapsulation layer, improves the light extraction efficiency of OLED display panel, further
Improve the display effect of OLED display.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is OLED display panel cross section structure schematic diagram of the present invention.
Fig. 2 is the preparation method flow chart of OLED display panel of the present invention.
Fig. 3 A-3F is the preparation method schematic diagram of OLED display panel described in Fig. 2.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention be directed to existing OLED display panel and preparation method, due to the section of ito thin film and glass substrate with
And the interface of glass substrate and air can be totally reflected, and cause OLED display panel light extraction efficiency lower, further be influenced
The technical issues of display effect of OLED display, the present embodiment is able to solve the defect.
As shown in Figure 1, being OLED display panel cross section structure schematic diagram of the present invention.Wherein, the present invention provides a kind of OLED
Display panel, including flexible base board 11, TFT layer 12, anode metal layer 13, organic functional material layer 14, cathode metal layer 15, lid
Cap layers 16 and thin-film encapsulation layer 17, the cap 17 be located at the cathode metal layer 15 and the thin-film encapsulation layer 17 it
Between, the material of the cap 16 is Al-Doped ZnO film (AZO).
Specifically, the flexible base board 11 uses PI (polyimides), and it can be transparent, it can also be nontransparent；The TFT layer
12 for driving each pixel unit to shine.
Specifically, the material of the anode metal layer 13 is ITO (tin indium oxide), the anode metal layer 13 passes through via hole
It is connect with the source-drain electrode in the TFT layer 12, and then TFT can be applied by the source-drain electrode of TFT to the anode metal layer 13
Voltage.
Specifically, the organic functional material layer 14 includes the hole injection/transport layer 141 being stacked from bottom to top, hair
Photosphere 142 and electron injection transport layer 143；Wherein, the luminescent layer 142 includes red photoresist 1421, green photoresist 1422
And blue light resistance 1423, appointing in the red photoresist 1421, the green photoresist 1422 and the blue light resistance 1423
Black matrix" 1424 is provided between meaning two.
Specifically, the material of the cathode metal layer 15 is magnesium silver alloy, it is formed on the cathode metal layer 15 multiple
Transmission region corresponding with the pixel unit on the organic functional material layer 14, with the part issued through the pixel unit
Light.
Specifically, the cap 16 is prepared in the cathode metal layer 15 through sol-gal process or magnetron sputtering method
On.The cap 16 is Al-Doped ZnO film (AZO), on the one hand since it is with high refractive index, helps to improve institute
The light extraction efficiency of OLED display panel is stated, it is on the other hand opaque in ultraviolet band due to AZO, ultraviolet light can be blocked, is avoided
Destruction of the ultraviolet light used when next step thin-film package to the organic functional material layer 14.
As shown in Fig. 2, the present invention also provides a kind of preparation method processes of OLED display panel, which comprises
S10 provides flexible base board 31, and TFT layer 32 is formed on the flexible base board 31.
Specifically, the S10 further include:
The material of the flexible base board 31 is PI (polyimides)；It first will be described using the cleaning solutions such as pure water or hot sulfuric acid
Flexible base board 31 is cleaned, and prepares TFT layer 32, the TFT layer 32 by using yellow light technique on the surface of the flexible base board 31
For driving each pixel unit to shine, as shown in Figure 3A.
S20 forms anode metal layer 33 on the TFT layer 32.
Specifically, the S20 further include:
Anode metal layer 33, the anode metal layer 33 are prepared by magnetron sputtering technique on the surface of the TFT layer 32
Material be ITO (tin indium oxide), the anode metal layer 33 is connect by via hole with the source-drain electrode in the TFT layer 32, into
And TFT can apply voltage to the anode metal layer 33 by the source-drain electrode of TFT, as shown in Figure 3B.
S30 forms organic function material layer 34 in the anode metal layer 33.
Specifically, the S30 further include:
Organic function material layer 34, organic function are prepared by vacuum thermal evaporation technique in the anode metal layer 33
Energy material layer 34 includes hole injection/transport layer 341, luminescent layer 342 and the electron injection transport layer being stacked from bottom to top
343；Wherein, the luminescent layer 342 includes red photoresist 3421, green photoresist 3422 and blue light resistance 3423, the red
Black matrix" is provided between any two in photoresist 3421, the green photoresist 3422 and the blue light resistance 3423
3424, as shown in Figure 3 C.
S40 forms cathode metal layer 35 on the organic functional material layer 34.
Specifically, the S40 further include:
Cathode metal layer 35, the cathode gold are prepared by vacuum thermal evaporation technique on the organic functional material layer 34
The material for belonging to layer 35 is magnesium silver alloy, is formed on the multiple and organic functional material layer 34 on the cathode metal layer 35
The corresponding transmission region of pixel unit, with some light issued through the pixel unit, as shown in Figure 3D.
S50, forms cap 36 on the cathode metal layer 35, and the cap 36 is Al-Doped ZnO film.
Specifically, the S50 further include:
Cap 36, the nut cap are prepared by sol-gal process or magnetron sputtering method on the cathode metal layer 35
Layer 36 helps to improve the OLED display panel on the one hand since it is with high refractive index for Al-Doped ZnO film (AZO)
Light extraction efficiency, it is on the other hand opaque in ultraviolet band due to AZO, ultraviolet light can be blocked, avoid next step thin-film package
When the destruction to the organic functional material layer 34 of the ultraviolet light that uses, as shown in FIGURE 3 E.
The flexible base board 31 is packaged by S60, forms thin-film encapsulation layer 37.
The flexible base board 31 is packaged, thin-film encapsulation layer 37 is formed, the thin-film encapsulation layer 37 is covered on described
In cap 36, the generally predominantly sandwich structure of the thin-film encapsulation layer 37, two layers of inorganic layer plays isolation water oxygen, and one
Layer organic layer, which is clipped in the middle, plays flat buffering.The thin-film encapsulation layer 37 can effectively prevent the infiltration of water oxygen, cause
OLED device failure, as illustrated in Figure 3 F.
The invention has the benefit that OLED display panel provided by the present invention and preparation method, in cathode metal layer
It is provided with one layer of Al-Doped ZnO film between thin-film encapsulation layer, improves the light extraction efficiency of OLED display panel, further
Improve the display effect of OLED display.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of OLED display panel characterized by comprising
Flexible base board；
TFT layer is located on the flexible base board；
Anode metal layer is located on the TFT layer；
Organic functional material layer is located in the anode metal layer；
Cathode metal layer is located on the OLED organic layer；
Cap is located on the cathode metal layer；
Thin-film encapsulation layer is located in the cap；
Wherein, the cap is Al-Doped ZnO film.
2. OLED display panel according to claim 1, which is characterized in that the cap is through sol-gal process or magnetic
Control sputtering method is prepared on the cathode metal layer.
3. OLED display panel according to claim 1, which is characterized in that the organic functional material layer includes being arrived by down
On the hole injection/transport layer, luminescent layer and the electron injection transport layer that are stacked.
4. OLED display panel according to claim 3, which is characterized in that the luminescent layer includes red photoresist, green
Photoresist and blue light resistance are set between any two in the red photoresist, the green photoresist and the blue light resistance
It is equipped with black matrix".
5. OLED display panel according to claim 1, which is characterized in that the material of the anode metal layer is ITO (oxygen
Change indium tin), the material of the cathode metal layer is magnesium silver alloy.
6. a kind of preparation method of OLED display panel, which is characterized in that the described method includes:
S10 provides flexible base board, forms TFT layer on the flexible base board；
S20 forms anode metal layer on the TFT layer；
S30 forms organic function material layer in the anode metal layer；
S40 forms cathode metal layer on the organic functional material layer；
S50, forms cap on the cathode metal layer, and the cap is Al-Doped ZnO film；
The flexible base board is packaged by S60, forms thin-film encapsulation layer.
7. the preparation method of OLED display panel according to claim 6, which is characterized in that in the S20, the anode
The material of metal layer is ITO (tin indium oxide), and the anode metal layer is prepared on the TFT layer by magnetron sputtering technique.
8. the preparation method of OLED display panel according to claim 6, which is characterized in that described organic in the S30
Function material layer includes the hole injection/transport layer, luminescent layer and electron injection transport layer being stacked from bottom to top, described
Organic functional material layer is prepared in the anode metal layer by vacuum thermal evaporation technique.
9. the preparation method of OLED display panel according to claim 6, which is characterized in that in the S40, the cathode
The material of metal layer is magnesium silver alloy, and the cathode metal layer is prepared by vacuum thermal evaporation technique in the organic functional material
On layer.
10. the preparation method of OLED display panel according to claim 6, which is characterized in that in the S50, the lid
Cap layers are prepared on the cathode metal layer by sol-gal process or magnetron sputtering technique.
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| CN201910352945.2A CN110098347A (en) | 2019-04-29 | 2019-04-29 | OLED display panel and preparation method |
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| CN201910352945.2A CN110098347A (en) | 2019-04-29 | 2019-04-29 | OLED display panel and preparation method |
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