CN110098343A - Quantum dot compound and preparation method thereof, luminescent device and preparation method thereof - Google Patents
Quantum dot compound and preparation method thereof, luminescent device and preparation method thereof Download PDFInfo
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- CN110098343A CN110098343A CN201910418265.6A CN201910418265A CN110098343A CN 110098343 A CN110098343 A CN 110098343A CN 201910418265 A CN201910418265 A CN 201910418265A CN 110098343 A CN110098343 A CN 110098343A
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The embodiment of the present invention provides a kind of quantum dot compound and preparation method thereof, luminescent device and preparation method thereof, the quantum dot compound includes core-shell quanta dots and the electron transport material that is set on the outside of the core-shell quanta dots, the electron transport material wraps up part core-shell quanta dots, and another part core-shell quanta dots are exposed；The exciton that the present invention solves the problems, such as that electrons and holes are formed is easy to be quenched at the interface of luminescent layer and electron transfer layer, to promote the performance of light emitting diode with quantum dots.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of quantum dot compound and preparation method thereof, luminescent device
And preparation method thereof.
Background technique
Quantum dot is a kind of important low dimensional semiconductor material, and it is corresponding partly that the size in three of them dimension is all not more than its
Twice of the exciton Bohr radius of conductor material.Quantum dot is generally spherical shape or spherical, and diameter is often between 2-20nm.Amount
Sub- point (QD) is as novel luminescent material, and with photochromic purity is high, luminous quantum efficiency is high, luminescent color is adjustable, uses the longevity
The advantages that long is ordered, the research hotspot of current New LED luminescent material is become.Therefore, using quanta point material as the amount of luminescent layer
Sub- point luminescent diode (QLED) becomes the Main way of current New Type Display Devices research.
Light emitting diode with quantum dots generally includes the luminescent layer with multiple cadmium selenide nano crystal.Cadmium selenide layer is folded in
Between electron transfer layer and hole transmission layer, applies electric field to light emitting diode with quantum dots, electrons and holes is made to be moved to selenizing
In cadmium layer.In cadmium selenide layer, electrons and holes are trapped in quantum dot and compound to emit photon.The quantum dot of the prior art is sent out
Optical diode service life is short, and performance is low, is unable to satisfy the demand of user.
Summary of the invention
The embodiment of the present invention is the technical problem to be solved is that, provide a kind of quantum dot compound and preparation method thereof, hair
Optical device and preparation method thereof, the exciton for solving electrons and holes formation are easy interface quilt in luminescent layer and electron transfer layer
The problem of being quenched, to promote the performance of light emitting diode with quantum dots.
In order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of quantum dot compounds, including nucleocapsid quantum
Point and the electron transport material that is set on the outside of the core-shell quanta dots, the electron transport material is by part nucleocapsid amount
Son point package, and another part core-shell quanta dots are exposed.
Optionally, the electron transport material wraps up 1/2 core-shell quanta dots, and by another 1/2 core-shell quanta dots
Exposure.
Optionally, the material of the electron transport material uses metal oxide.
Optionally, the core-shell quanta dots include nuclear material and by nuclear material wrap up shell material.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of preparation method of quantum dot compound,
Include:
The electron transport material for all wrapping up the core-shell quanta dots is formed in the outside of core-shell quanta dots, is formed multiple
Close object semi-finished product；
Nonpolar solvent and polar solvent are mixed to form split-phase solution；
Above-mentioned compound semi-finished product are dissolved in above-mentioned nonpolar solvent；
Aqueous phase quantum point ligand is added into polar solvent, is in moiety complex semi-finished product in polar solvent, it is another
Moiety complex semi-finished product are in nonpolar solvent；
The electron transport material of above-mentioned moiety complex semi-finished product is performed etching, so that moiety complex semi-finished product
Core-shell quanta dots exposure.
Optionally, the electron transport material by above-mentioned moiety complex semi-finished product performs etching, including
Weak acid is added into polar solvent, by weak acid to the electron transport materials of above-mentioned moiety complex semi-finished product into
Row etching.
Optionally, the weak acid includes the combination of one or more of hypochlorous acid, boric acid, metasilicic acid and phenol.
Optionally, described to be in moiety complex semi-finished product in polar solvent, another part compound semi-finished product are in
In nonpolar solvent, including
Aqueous phase quantum point ligand is added into polar solvent, is in moiety complex semi-finished product in polar solvent, with water
Phase quantum dot ligand carries out ligand exchange.
Optionally, above-mentioned compound semi-finished product and above-mentioned nonpolar solvent according to the ratio that mass ratio is 1:100-1:2 into
Row mixing.
Optionally, above-mentioned polar solvent and above-mentioned nonpolar solvent are mixed according to the ratio that volume ratio is 1:10-10:1
It closes.
Optionally, above-mentioned aqueous phase quantum point ligand and above-mentioned polar solvent are carried out according to the ratio that mass ratio is 1:10-3:1
Mixing.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of luminescent devices, including luminescent layer, electronics
Transport layer and the boundary layer between the luminescent layer and the electron transfer layer, the boundary layer include aforementioned quantum dot
Compound.
Optionally, the electron transport material of the quantum dot compound is located at the nucleocapsid quantum of the quantum dot compound
Side of the point far from the luminescent layer.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of preparation method of aforementioned lighting device,
Include:
Form luminescent layer；
Hydrophilic interface is formed on the surface of luminescent layer；
Boundary layer is formed on the hydrophilic interface of luminescent layer, makes the electron transport material of quantum dot compound in boundary layer
Layer is located at the core-shell quanta dots of the quantum dot compound far from the side of above-mentioned luminescent layer；
Electron transfer layer is formed on boundary layer.
The embodiment of the invention provides a kind of quantum dot compound and preparation method thereof, luminescent device and preparation method thereof,
By forming electron transport material in the outside of part core-shell quanta dots, make electron transport material by part core-shell quanta dots
Package, and by the exposure of another part core-shell quanta dots, which is used to form positioned at luminescent layer and electron transfer layer
Between boundary layer, solve what the exciton of electrons and holes formation was easy to be quenched at the interface of luminescent layer and electron transfer layer
Problem makes the interface of luminescent layer and electron transfer layer form non-heterojunction structure, to extend the use of light emitting diode with quantum dots
Service life promotes the performance of light emitting diode with quantum dots.
Certainly, implement any of the products of the present invention or method it is not absolutely required at the same reach all the above excellent
Point.Other features and advantages of the present invention will illustrate in subsequent specification embodiment, also, partly implement from specification
It is become apparent in example, or understand through the implementation of the invention.The purpose of the embodiment of the present invention and other advantages can pass through
Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide to further understand technical solution of the present invention, and constitutes part of specification, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.Attached drawing
In the shapes and sizes of each component do not reflect actual proportions, purpose is schematically illustrate the content of present invention.
Fig. 1 is the structural schematic diagram of quantum dot of embodiment of the present invention compound；
Fig. 2 is the structural representation that core-shell quanta dots are formed in first embodiment of the invention quantum dot compound preparation process
Figure；
Fig. 3 is the structural representation that compound semi-finished product are formed in first embodiment of the invention quantum dot compound preparation process
Figure；
Fig. 4 is the structural schematic diagram of split-phase solution in first embodiment of the invention quantum dot compound preparation process；
Fig. 5 be added in first embodiment of the invention quantum dot compound preparation process into split-phase solution compound half at
Structural schematic diagram after product；
Fig. 6 is so that moiety complex semi-finished product is in polarity in first embodiment of the invention quantum dot compound preparation process
Structural schematic diagram in solvent；
Fig. 7 is to pass the electronics of moiety complex semi-finished product in first embodiment of the invention quantum dot compound preparation process
Structural schematic diagram after defeated material layer etching；
Fig. 8 is the structural schematic diagram of second embodiment of the invention luminescent device；
Fig. 9 is that the structure after forming hydrophilic interface in second embodiment of the invention luminescent device preparation process in substrate is shown
It is intended to；
Figure 10 is to deposit first layer nucleocapsid in second embodiment of the invention luminescent device preparation process on hydrophilic interface
Structural schematic diagram after quantum dot layer；
Figure 11 is to deposit second layer nucleocapsid in second embodiment of the invention luminescent device preparation process on hydrophilic interface
Structural schematic diagram after quantum dot layer；
Figure 12 is to form boundary on the hydrophilic interface of luminescent layer in second embodiment of the invention luminescent device preparation process
Structural schematic diagram after surface layer；
Figure 13 is after forming electron transfer layer on boundary layer in second embodiment of the invention luminescent device preparation process
Structural schematic diagram.
Description of symbols:
Specific embodiment
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawings and examples.Following embodiment
For illustrating the present invention, but it is not intended to limit the scope of the invention.It should be noted that in the absence of conflict, the application
In embodiment and embodiment in feature can mutual any combination.
Quantum dot has the characteristics that some uniquenesses, such as launch wavelength is adjustable, emission spectrum is narrow and launch stability is high
The features such as, Research Emphasis is had become in recent years.Light emitting diode with quantum dots is high with luminous efficiency, color gamut is wider, color
It reproduces compared with the true and lower advantage of energy consumption, however the existing light emitting diode with quantum dots service life is shorter, mainly due to electronics
The exciton formed with hole is easy to be quenched at the interface of luminescent layer and electron transfer layer.In order to solve existing quantum dot light emitting two
The exciton that pole pipe electrons and holes are formed is easy the problems such as the interface of luminescent layer and electron transfer layer is quenched.The present invention provides
A kind of quantum dot compound, including core-shell quanta dots and the electron transport material being set on the outside of the core-shell quanta dots,
The electron transport material wraps up part core-shell quanta dots, and another part core-shell quanta dots are exposed；The quantum dot is multiple
It closes object and is used to form the boundary layer between luminescent layer and electron transfer layer, form the interface of luminescent layer and electron transfer layer
Non- heterojunction structure solves the exciton that electrons and holes are formed in light emitting diode with quantum dots and is easy in luminescent layer and electron transfer layer
Interface the problem of being quenched, extend the service life of light emitting diode with quantum dots, promote the performance of light emitting diode with quantum dots.
Below by specific embodiment, the technical solution that the present invention will be described in detail.
First embodiment
Fig. 1 is the structural schematic diagram of quantum dot of embodiment of the present invention compound.As shown in Figure 1, quantum of the embodiment of the present invention
Point compound includes core-shell quanta dots 1 and the electron transport material 2 for being set to 1 outside of core-shell quanta dots, electron-transport material
The bed of material 2 wraps up part core-shell quanta dots 1, and another part core-shell quanta dots 1 are exposed.
As shown in Figure 1, core-shell quanta dots 1 include nuclear material 101 and the shell material 102 for wrapping up nuclear material 101, core material
Material 101 includes cadmium selenide, cadmium sulfide or indium phosphide etc..Core-shell quanta dots 1 in the embodiment of the present invention use cadmium selenide (CdSe)
For nuclear material 101, use zinc sulphide (ZnS) for shell material 102.
As shown in Figure 1, the material of electron transport material 2 uses metal oxide, electron transport material in the present embodiment
The material of layer 2 uses zinc oxide (ZnO), is by etching after aoxidizing shell material 102.Quantum dot in the present embodiment is multiple
Object is closed to be used to make luminescent layer and electricity as the boundary layer in light emitting diode with quantum dots between electron transfer layer and hole transmission layer
The interface of sub- transport layer forms non-heterojunction structure, solves the exciton that electrons and holes are formed in light emitting diode with quantum dots and is easy
The problem of interface of luminescent layer and electron transfer layer is quenched extends the service life of light emitting diode with quantum dots, promotes quantum
The performance of point luminescent diode.
In some embodiments, quantum dot compound can also be using other materials as nuclear material, shell material and electricity
Sub- transmission material layer, details are not described herein for the present embodiment.
Further, electron transport material 2 wraps up 1/2 core-shell quanta dots 1, and by another 1/2 core-shell quanta dots 1
Exposure.
Fig. 2~7 are the schematic diagram of the present embodiment quantum dot compound preparation process, and signal uses cadmium selenide (CdSe) in figure
It for nuclear material, uses zinc sulphide for shell material, uses zinc oxide (ZnO) for the quantum dot compound of electron transport material material
Preparation process.The preparation method of quantum dot compound includes:
(1) core-shell quanta dots 1 are formed.Forming core-shell quanta dots 1 includes: that cadmium selenide (CdSe) is made to be nuclear material 101, vulcanization
Zinc (ZnS) is shell material 102, cadmium selenide (CdSe) is all wrapped up, as shown in Figure 2.The preparation method of core-shell quanta dots is existing
There is mature preparation process, details are not described herein for the present embodiment.
(2) compound semi-finished product 3 are formed.Forming compound semi-finished product 3 includes: by the shell material in above-mentioned 101 outside of nuclear material
Material 102 carries out oxidation processes, so that the oxidation of part shell material 102 is formed electron transport material 2, electron transport material by oxidation
The material of layer 2 is zinc oxide (ZnO).Core-shell quanta dots 1 are formed into cadmium selenide (CdSe)/zinc sulphide (ZnS)/zinc oxide
(ZnO) nanoparticle, as shown in Figure 3.It wherein, include: to set zinc sulphide by zinc sulphide (ZnS) method for carrying out oxidation processes
In nitrogen, a small amount of oxygen is then passed to, under conditions of temperature is 700 degree, after isothermal holding 2 hours, is cooled to room temperature, it is complete
The oxidation processes of pairs of zinc sulphide (ZnS).
(3) split-phase solution is prepared.Preparing split-phase solution includes: to be according to volume ratio by polar solvent 4 and nonpolar solvent 5
The ratio of 1:10-10:1 is mixed, and split-phase solution is made.In the present embodiment, using water as polar solvent 4, with hexane for non-pole
Property solvent 5 for, water and hexane are mixed according to the ratio that volume ratio is 1:1, split-phase solution is made, as shown in Figure 4.
(4) above-mentioned compound semi-finished product are added.It includes: by above-mentioned compound semi-finished product 3 that above-mentioned compound semi-finished product, which are added,
It is mixed with nonpolar solvent 5 according to the ratio that mass ratio is 1:100-1:2.In the present embodiment, by the above-mentioned compound of 100mg
Semi-finished product 3 dissolve in 200mg hexane solvent, as shown in Figure 5.
(5) it is in moiety complex semi-finished product in polar solvent, it is molten that another part compound semi-finished product are in nonpolarity
In agent.It is in moiety complex semi-finished product in polar solvent, another part compound semi-finished product are in packet in nonpolar solvent
Include: it is 1:10-3 that aqueous phase quantum point ligand, aqueous phase quantum point ligand and polar solvent are added into polar solvent according to mass ratio:
1 ratio is mixed.In the present embodiment, 30mg aqueous phase quantum point ligand 401 is added into water, wherein aqueous phase quantum point is matched
Body 401 uses mercaptopropionic acid；Compound semi-finished product are made to be in the interface of polar solvent 4 and nonpolar solvent 5, i.e. part is compound
Object semi-finished product 3 are in polar solvent 4, carry out ligand exchange, another portion with the aqueous phase quantum point ligand 401 in polar solvent 4
Compound semi-finished product 3 are divided to be in nonpolar solvent 5.The present embodiment is according to the aqueous phase quantum point ligand 401 in polar solvent 4
Content controls the ligand exchange degree of above-mentioned moiety complex semi-finished product 3, is in polar solvent 4 to control compound semi-finished product 3
Interior volume, as shown in Figure 6.
(6) electron transport material of above-mentioned moiety complex semi-finished product is performed etching so that moiety complex half at
The core-shell quanta dots exposure of product.The electron transport material of above-mentioned moiety complex semi-finished product is performed etching, so that part is multiple
The core-shell quanta dots exposure for closing object semi-finished product includes: that weak acid is added into polar solvent 4, by weak acid to above-mentioned moiety complex
The electron transport material 2 of semi-finished product 3 performs etching, so that core-shell quanta dots of the compound in polar solvent 4 half at 3
1 exposure, completes the preparation of quantum dot compound.Wherein, the mass ratio of weak acid and compound semi-finished product is 1:100-100:1, such as
Shown in Fig. 7.
In embodiment, in order to avoid the weak acid being added into polar solvent continues to the nucleocapsid amount being exposed in polar solvent
Son point perform etching, need to select the acid weaker than hydrosulphuric acid, the weak acid being added into polar solvent using hypochlorous acid, boric acid, partially
One or more of silicic acid and phenol combination, wherein hypochlorous acid, boric acid, metasilicic acid and phenol Acidity are as follows: HClO
(hypochlorous acid) > H3BO3(boric acid) > H2SiO3(metasilicic acid) > C6H5OH (phenol).
Although front illustrates the technical solution of the embodiment of the present invention, amount of the embodiment of the present invention in such a way that interface etches
The structure and preparation method of son point compound are not limited to above content.In fact, the structure type of existing quantum dot is suitable for
The embodiment of the present invention, which is not described herein again.
The quantum dot compound of the embodiment of the present invention is used for as electron transfer layer and hole in light emitting diode with quantum dots
Boundary layer between transport layer, so that the exciton for solving electrons and holes formation is easy the interface in luminescent layer and electron transfer layer
The problem of being quenched makes the interface of luminescent layer and electron transfer layer form non-heterojunction structure, extends light emitting diode with quantum dots
Service life promotes the performance of light emitting diode with quantum dots.
Second embodiment
Fig. 8 is the structural schematic diagram of second embodiment of the invention luminescent device.As shown in figure 8, based on previous embodiment
Technical concept is set to luminescent layer 7 in substrate 6, electron-transport the present invention also provides a kind of luminescent device, including substrate 6
Layer 9 and the boundary layer 8 between luminescent layer 7 and electron transfer layer 9, boundary layer 8 include aforementioned quantum dot compound.Its
In, the electron transport material of the quantum dot compound in boundary layer 8 is located at the core-shell quanta dots of quantum dot compound far from hair
The side of photosphere 7.
The luminescent device of the embodiment of the present invention forms boundary layer by quantum dot compound, solves electronics in luminescent device
The exciton formed with hole is easy to make luminescent layer and electron-transport the problem of the interface of luminescent layer and electron transfer layer is quenched
The interface of layer forms non-heterojunction structure, to extend the service life of luminescent device, promotes the performance of luminescent device.
Fig. 9~13 are the schematic diagram of the present embodiment luminescent device preparation process, and signal uses the amount of first embodiment in figure
Son point compound forms the preparation process of boundary layer.The preparation method of luminescent device includes:
(1) hydrophilic interface is formed on the substrate.It includes: to deposit oxygen in substrate 6 that hydrophilic interface, which is formed on the substrate,
Change zinc nanoparticle layers, deposition carries out ligand exchange with metal Ion-hydrophilic Ligand and zinc oxide nano-particle layer after the completion, makes zinc oxide nano
Grain of rice sublayer forms hydrophilic interface 601, as shown in Figure 9.
(2) luminescent layer is formed.Forming luminescent layer includes: the deposition first layer nucleocapsid quantum on above-mentioned hydrophilic interface 601
Point layer 701 carries out ligand exchange using hydrophobic ligand of the mercaptopropionic acid to first layer core-shell quanta dots layer 701, makes first layer core
The surface of shell quantum dot layer 701 forms hydrophilic interface, and second layer core-shell quanta dots layer 702 is deposited on the hydrophilic interface,
And so on, continue to deposit core-shell quanta dots layer, until reaching target thickness, forms luminescent layer.Wherein, core-shell quanta dots layer is adopted
It is nuclear material with cadmium selenide (CdSe), uses zinc sulphide for shell material, as shown in Figure 10 and Figure 11.
(3) hydrophilic interface is formed on the surface of luminescent layer.Forming hydrophilic interface on the surface of luminescent layer includes: to use
Mercaptopropionic acid carries out ligand exchange to the hydrophobic ligand of core-shell quanta dots in luminescent layer, and the surface of luminescent layer is made to form hydrophily circle
Face.
(4) boundary layer is formed on the hydrophilic interface of luminescent layer.Boundary layer is formed on the hydrophilic interface of luminescent layer
Include: the deposition quantum dot compound 801 on the hydrophilic interface of luminescent layer, forms boundary layer 8.Wherein, since quantum dot is multiple
The part for closing exposure core-shell quanta dots 1 in object 801 has hydrophilic ligand, attracts each other, makes with the hydrophilic interface of luminescent layer
It obtains the electron transport material 2 in quantum dot compound 801 and is located at the core-shell quanta dots 1 of quantum dot compound 801 far from luminous
The side of layer 7 avoids electron transport material 2 from stopping hole, as shown in figure 12.
(5) electron transfer layer 9 is formed on boundary layer 8, as shown in figure 13.
In the description of the embodiment of the present invention, it is to be understood that term " middle part ", "upper", "lower", "front", "rear",
The orientation or positional relationship of the instructions such as "vertical", "horizontal", "top", "bottom" "inner", "outside" be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not intended to limit the invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (14)
1. a kind of quantum dot compound, which is characterized in that including core-shell quanta dots and be set on the outside of the core-shell quanta dots
Electron transport material, the electron transport material wraps up part core-shell quanta dots, and by another part nucleocapsid quantum
Point exposure.
2. quantum dot compound according to claim 1, which is characterized in that the electron transport material is by 1/2 core
Shell quantum dot package, and another 1/2 core-shell quanta dots are exposed.
3. quantum dot compound according to claim 1, which is characterized in that the material of the electron transport material uses
Metal oxide.
4. quantum dot compound according to claim 1, which is characterized in that the core-shell quanta dots include nuclear material and
The shell material that nuclear material is wrapped up.
5. a kind of preparation method of quantum dot compound characterized by comprising
The electron transport material for all wrapping up the core-shell quanta dots is formed in the outside of core-shell quanta dots, forms compound
Semi-finished product；
Nonpolar solvent and polar solvent are mixed to form split-phase solution；
Above-mentioned compound semi-finished product are dissolved in above-mentioned nonpolar solvent；
It is in moiety complex semi-finished product in polar solvent, another part compound semi-finished product are in nonpolar solvent；
The electron transport material of above-mentioned moiety complex semi-finished product is performed etching, so that the nucleocapsid of moiety complex semi-finished product
Quantum dot exposure.
6. the preparation method of quantum dot compound according to claim 5, which is characterized in that described that above-mentioned part is compound
The electron transport material of object semi-finished product performs etching, including
Weak acid is added into polar solvent, is carved by electron transport material of the weak acid to above-mentioned moiety complex semi-finished product
Erosion.
7. the preparation method of quantum dot compound according to claim 6, which is characterized in that the weak acid includes time chlorine
The combination of one or more of acid, boric acid, metasilicic acid and phenol.
8. the preparation method of quantum dot compound according to claim 5, which is characterized in that described to make moiety complex half
Finished product is in polar solvent, and another part compound semi-finished product are in nonpolar solvent, including
Aqueous phase quantum point ligand is added into polar solvent, is in moiety complex semi-finished product in polar solvent, with water phase amount
Son point ligand carries out ligand exchange.
9. the preparation method of quantum dot compound according to claim 5, which is characterized in that above-mentioned compound semi-finished product with
Above-mentioned nonpolar solvent is mixed according to the ratio that mass ratio is 1:100-1:2.
10. the preparation method of quantum dot compound according to claim 5, which is characterized in that above-mentioned polar solvent with it is upper
Nonpolar solvent is stated to be mixed according to the ratio that volume ratio is 1:10-10:1.
11. the preparation method of quantum dot compound according to claim 8, which is characterized in that above-mentioned aqueous phase quantum point is matched
Body and above-mentioned polar solvent are mixed according to the ratio that mass ratio is 1:10-3:1.
12. a kind of luminescent device, which is characterized in that including luminescent layer, electron transfer layer and be located at the luminescent layer and described
Boundary layer between electron transfer layer, the boundary layer include any quantum dot compound of the claims 1-4.
13. luminescent device according to claim 12, which is characterized in that the electron transport material of the quantum dot compound
Layer is located at the core-shell quanta dots of the quantum dot compound far from the side of the luminescent layer.
14. a kind of preparation method of luminescent device as claimed in claim 13 characterized by comprising
Form luminescent layer；
Hydrophilic interface is formed on the surface of luminescent layer；
Boundary layer is formed on the hydrophilic interface of luminescent layer, makes the electron transport material position of quantum dot compound in boundary layer
In the quantum dot compound core-shell quanta dots far from the side of above-mentioned luminescent layer；
Electron transfer layer is formed on boundary layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020233358A1 (en) * | 2019-05-20 | 2020-11-26 | 京东方科技集团股份有限公司 | Quantum dot composition and preparation method therefor, and light-emitting device and preparation method therefor |
| CN112164741A (en) * | 2020-09-28 | 2021-01-01 | 深圳市华星光电半导体显示技术有限公司 | Charge transport layer and light emitting device |
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| JP3415068B2 (en) * | 1999-04-30 | 2003-06-09 | 理化学研究所 | Method for forming nitride semiconductor quantum dots by position controlled droplet epitaxy, quantum bit device structure and quantum correlation gate device structure in quantum computer |
| JP4863551B2 (en) * | 2001-01-22 | 2012-01-25 | 財団法人ファインセラミックスセンター | Quantum dot manufacturing method and quantum dot structure |
| CN110098343B (en) * | 2019-05-20 | 2021-10-19 | 京东方科技集团股份有限公司 | Quantum dot composite and preparation method thereof, and light-emitting device and preparation method thereof |
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2019
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2020
- 2020-04-27 WO PCT/CN2020/087257 patent/WO2020233358A1/en active Application Filing
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| US20180019371A1 (en) * | 2016-03-17 | 2018-01-18 | Apple Inc. | Quantum dot spacing for high efficiency quantum dot led displays |
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| CN109256476A (en) * | 2018-09-19 | 2019-01-22 | 京东方科技集团股份有限公司 | Quantum dot light emitting layer, quantum dot light emitting device and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020233358A1 (en) * | 2019-05-20 | 2020-11-26 | 京东方科技集团股份有限公司 | Quantum dot composition and preparation method therefor, and light-emitting device and preparation method therefor |
| CN112164741A (en) * | 2020-09-28 | 2021-01-01 | 深圳市华星光电半导体显示技术有限公司 | Charge transport layer and light emitting device |
| CN112164741B (en) * | 2020-09-28 | 2022-02-01 | 深圳市华星光电半导体显示技术有限公司 | Charge transport layer and light emitting device |
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| CN110098343B (en) | 2021-10-19 |
| WO2020233358A1 (en) | 2020-11-26 |
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