CN110098292A - Bluish-green light emitting diode with quantum dots and preparation method based on nano graph - Google Patents
Bluish-green light emitting diode with quantum dots and preparation method based on nano graph Download PDFInfo
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- CN110098292A CN110098292A CN201910169560.2A CN201910169560A CN110098292A CN 110098292 A CN110098292 A CN 110098292A CN 201910169560 A CN201910169560 A CN 201910169560A CN 110098292 A CN110098292 A CN 110098292A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of bluish-green light emitting diode with quantum dots and preparation method based on nano graph, it is low mainly to solve existing bluish-green light emitting diode with quantum dots charge transfer efficiency, the problem more than surface defect.It includes: substrate layer (1), n-type GaN layer (2), In from bottom to topxGa1‑xN single quantum dot layer (3) and p-type GaN layer (4), it is highly 3-30nm, and the nano graph being evenly distributed that it is 20-200nm which, which is equipped with diameter, the InxGa1‑xN single quantum dot layer is located on nano graph.The present invention is compared with traditional light emitting diode with quantum dots, it the use of monox nanometer ball array is mask, the nano graph being evenly distributed by ICP etching technique, the direct growth quantum point on nano graph, improve charge transfer efficiency, surface dislocation is reduced, efficient bluish-green light emitting diode with quantum dots can be obtained, can be used in blue green light luminaire.
Description
Technical field
The invention belongs to technical field of semiconductors, in particular to a kind of light emitting diode with quantum dots can be used for blue green light hair
In light device.
Technical background
Due to the unique quantum effect such as dimensional effect, quantum confined effect, macro quanta tunnel effect and skin effect,
Quantum dot shows many physicochemical properties for being different from macroscopic body material, in nonlinear optics, magnetic medium, catalysis, medicine
And functional material etc. has extremely wide application prospect.Especially semiconductor-quantum-point because of it in single-electron device, deposit
The application of reservoir and various photoelectric devices etc. makes its growth and property become the hot spot studied now.
In semiconductor-quantum-point device, for bluish-green light emitting diode with quantum dots as common photoelectric device, structure is logical
It often include substrate, electronic conductive layer, quantum dot light emitting layer and hole-conductive layer, wherein quantum dot light emitting layer is often to pass through chemical solution
The colloidal quantum dot that liquid obtains, since the presence of organism in colloidal quantum dot makes charge transfer efficiency low, energy level is not easily-controllable
System, and surface defect is more, has seriously affected the photoelectric properties of light emitting diode.
Summary of the invention
It is an object of the invention to the deficiencies for the bluish-green light emitting diode with quantum dots of tradition, propose a kind of based on nanometer figure
The bluish-green light emitting diode with quantum dots and preparation method of shape reduce surface to improve the charge transfer efficiency of quantum dot light emitting layer
Defect acquires efficient bluish-green light emitting diode with quantum dots.
To achieve the above object, the bluish-green light emitting diode with quantum dots of the invention based on nano graph, is wrapped from bottom to top
It includes: substrate layer, n-type GaN layer, InxGa1-xN single quantum dot layer and p-type GaN layer, it is characterised in that: be equipped in n-type GaN layer
The nano graph that diameter is 20-200nm, is highly 3-30nm, and is evenly distributed, InxGa1-xN single quantum dot layer is located at nanometer figure
In shape, to improve the charge transfer efficiency of quantum dot, surface dislocation density is reduced.
Preferably, the InxGa1-xN single quantum dot layer, with a thickness of 5-50nm, the adjusting range of In content x is
0.15-0.5。
Preferably, the p-type GaN layer with a thickness of 100-400nm, doping concentration is 5 × 1017cm-1-5×
1018cm-1。
Preferably, the N-shaped GaN structure of the nano graph with a thickness of 2000-4000nm, doping concentration adjusts model
Enclose is 6 × 1017cm-1-6×1018cm-1。
Preferably, the substrate layer is using sapphire or silicon or silicon carbide.
To achieve the above object, the present invention is based on the preparation method of the bluish-green light emitting diode with quantum dots of nano graph, packets
Include following steps:
1) in MOCVD reacting furnace, heat pre-treatment is carried out to substrate, heating temperature is 1100-1300 DEG C；
2) n-type GaN layer of MOCVD device growth 2000-4000nm is utilized on substrate after the pre-treatment；
3) the N-shaped GaN that surface has nanometer ball array is obtained using czochralski method or method of spin coating in n-type GaN layer
Layer, the diameter of nanosphere are 20-200nm, and nanosphere solution concentration is 5%-15%；
4) n with nano graph is obtained using ICP etching technique in n-type GaN layer of the surface with nanometer ball array
Type GaN layer, wherein etched thickness is 3-30nm, cleans nanosphere in the HF acid solution for going glue and configuration after etching
Fall；
5) In for being 5-50nm using MOCVD device growth thickness in the n-type GaN layer with nano graphxGa1-xN
Single quantum dot layer, the range of the component x of In are 0.15-0.5；
6) in InxGa1-xIt is GaN layers of p-type of 100-400nm that MOCVD device growth thickness is utilized on N single quantum dot layer,
Reaction chamber temperature is maintained 750-850 DEG C later, under N2 atmosphere, anneal 5-10min, completes to light emitting diode with quantum dots
Production.
The present invention is mask due to using monox nanometer ball, passes through compared with traditional Colloidal Quantum Dots light emitting diode
The nano graph that ICP etching technique is evenly distributed, the direct growth quantum point on nano graph, improves the biography of charge
Defeated efficiency, reduces surface dislocation, improves the performance of bluish-green quantum device.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the flow diagram of the bluish-green light emitting diode with quantum dots of present invention production nano graph.
Fig. 3 is the nanosphere array junctions composition observed under scanning electron microscope.
Fig. 4 is the nano-pillar array structure figure observed under scanning electron microscope.
Specific embodiment
The present invention will be further described below with reference to the accompanying drawings.
Referring to Fig.1, device architecture of the invention includes: substrate layer 1, the n-type GaN layer 2 with nano graph, InxGa1-xN
Single quantum well 3, p-type GaN layer 4.Wherein substrate layer 1 is using sapphire or silicon or silicon carbide；N-shaped GaN with nano graph
Layer 2 is located on substrate layer 1, and with a thickness of 2000-4000nm, doping concentration adjusting range is 6 × 1017cm-1-6×1018cm-1；The InxGa1-xN single quantum well 3 is located on the n-type GaN layer 2 with nano graph, with a thickness of 5-50nm；P-type GaN
Layer 4 is located at InxGa1-xOn N single quantum well 3, with a thickness of 100-400nm, doping concentration is 5 × 1017cm-1-5×
1018cm-1。
InxGa1-xThe adjusting range of In content x is 0.15-0.5 in N single quantum well 3, and different In components is available
The light emitting diode with quantum dots of different wave length.
Referring to Fig. 2, the present invention provides three kinds of embodiments of bluish-green light emitting diode with quantum dots of the preparation based on nano graph.
Embodiment 1 prepares a kind of blue light quantum point light emitting diode that emission wavelength is 420nm.
Step 1 pre-processes substrate.
Sapphire Substrate is cleaned, the substrate after over cleaning is placed in metal organic chemical vapor deposition
In MOCVD reaction chamber, the vacuum degree of reaction chamber is reduced to 120Torr；It is passed through hydrogen to reaction chamber, reacts chamber pressure in MOCVD
Power is reached under the conditions of 150Torr, is 1300 DEG C by silicon to temperature, and keep 10min, is completed the heat to substrate base
Processing.
Step 2, growing n-type GaN layer, such as Fig. 2 (a).
Pretreated substrate is placed in MOCVD device, it is 1100 DEG C that its reaction chamber temperature, which is arranged, while being passed through flow
For the ammonia of 25000sccm, the gallium source that the silicon source and flow that flow is 8sccm are 340sccm, pressure remains 300Torr,
The n-type GaN layer that growth thickness is 2 μm on pretreated substrate.
Step 3 makes nano graph, such as Fig. 2 (b)-(d)
Firstly, obtaining surface with nanometer spherical array using the nanosphere that czochralski method coating diameter is 20nm in n-type GaN layer
The n-type GaN layer of column, wherein the concentration of nanosphere is 15%, such as Fig. 2 (b)；The surface has the n-type GaN layer of nanometer ball array
The nanosphere array structure observed under scanning electron microscope, as shown in Figure 3；
Then, obtaining height using ICP etching technique in n-type GaN layer of the surface with nanometer ball array is 20nm's
Nanosphere is washed such as Fig. 2 (c), then in the HF acid solution for going glue and configuration, is obtained with nano graph by nano graph
N-type GaN layer, such as Fig. 2 (d), the structure that there is the n-type GaN layer of nano graph to observe under scanning electron microscope is as indicated at 4.
Step 4 grows In0.15Ga0.85N single quantum dot structure, such as Fig. 2 (e).
Utilize MOCVD device in reaction chamber growth thickness for 5nm's in the n-type GaN layer with nano graph
In0.15Ga0.85N single quantum dot, wherein the flow of nitrogen source is maintained at 30000sccm in growth course, and temperature is maintained at 800 DEG C, pressure
Power is maintained at 350Torr, and gallium source flux remains 340sccm, and indium source flux remains 480sccm.
Step 5 grows p-type GaN layer, such as Fig. 2 (f).
In In0.15Ga0.85On N single quantum dot using MOCVD device reaction chamber temperature be 980 DEG C, pressure 150Torr
Under conditions of, while it being passed through the ammonia that flow is 35000sccm, the gallium source and flow that flow is 38sccm are 1800sccm's
Magnesium source, growth thickness are the p-type GaN layer of 100nm；Reaction chamber temperature is maintained 750 DEG C later, in N2Under atmosphere, annealing
10min completes to make the blue light quantum point light emitting diode that emission wavelength is 420nm.
Embodiment 2 prepares the green quantum point luminescent diode that emission wavelength is 570nm
Step 1, substrate is pre-processed.
The silicon substrate after over cleaning is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and will reaction
The vacuum degree of room is reduced to 110Torr, then is passed through hydrogen to reaction chamber, is reached for 120Torr item in MOCVD chamber pressure
Under part, it is 1200 DEG C by silicon to temperature, and keep 10min, completes the heat treatment to substrate base.
Step 2, growing n-type GaN layer, such as Fig. 2 (a).
The n-type GaN layer for being 4 μm using MOCVD device growth thickness on substrate after the pre-treatment, process conditions are such as
Under:
Reaction chamber temperature is 1000 DEG C, pressure 350Torr, ammonia flow 30000sccm, and gallium source flux is
340sccm, silicon source flow are 16sccm.
Step 3, the nano graph that production height is 30nm in n-type GaN layer, such as Fig. 2 (b) -2 (d).
3.1) using method of spin coating be coated in n-type GaN layer diameter for 200nm nanosphere, nanosphere solution it is dense
Degree is 5%, the nanometer ball array observed under scanning electron microscope such as Fig. 2 (b), the surface with the n-type GaN layer of nanometer ball array
Structure, as shown in Figure 3；
3.2) n-type GaN layer of nanosphere, etched height 30nm, such as Fig. 2 are had using ICP etching technique etching surface
(c)；
3.3) nanosphere is washed in the HF acid solution for going glue and configuration, obtains the N-shaped GaN with nano-pillar
Layer, such as Fig. 2 (d), the structure that there is the n-type GaN layer of nano graph to observe under scanning electron microscope is as indicated at 4.
Step 4, In is grown0.5Ga0.5N single quantum dot structure, such as Fig. 2 (e).
It in reaction chamber growth thickness is 50nm using MOCVD device in the n-type GaN layer with nano graph
In0.5Ga0.5The process conditions of N single quantum dot, growth are as follows:
The flow of nitrogen source is maintained at 25000sccm, and temperature is maintained at 900 DEG C, and pressure is maintained at 400Torr, gallium source flux
340sccm is remained, indium source flux remains 1500sccm.
Step 5, p-type GaN layer is grown, such as Fig. 2 (f).
5.1) in In0.5Ga0.5The p-type GaN layer for being 400nm using MOCVD device growth thickness on N single quantum dot, work
Skill condition is as follows:
The condition that reaction chamber temperature is 1000 DEG C, pressure is 200Torr；
Ammonia flow is 40000sccm, and gallium source flux is 35sccm, and magnesium source flux is 2000sccm；
5.2) reaction chamber temperature is maintained 850 DEG C, in N2Under atmosphere, anneal 10min, and completion is to emission wavelength
The green quantum point luminescent diode of 570nm makes.
Embodiment 3 prepares a kind of green quantum point luminescent diode that emission wavelength is 505nm.
Step A, pre-processes substrate.
Silicon carbide substrates are placed in metal organic chemical vapor deposition MOCVD reaction chamber, after over cleaning by reaction chamber
Vacuum degree be reduced to 130Torr；It is passed through hydrogen to reaction chamber, under the conditions of MOCVD chamber pressure is reached for 140Torr,
It is 1100 DEG C by silicon to temperature, and keeps 10min, completes the heat treatment to substrate base.
Step B, growing n-type GaN layer, such as Fig. 2 (a).
On substrate after the pre-treatment using MOCVD device reaction chamber temperature be 1050 DEG C, pressure 330Torr, ammonia
Throughput is 28000sccm, and growth thickness is 3 under the process conditions that silicon source flow is 15sccm and gallium source flux is 340sccm
μm n-type GaN layer.
Step C makes nano graph, such as Fig. 2 (b)-(d).
In n-type GaN layer using method of spin coating in the case where the concentration of nanosphere solution is 10%, coating diameter is 100nm
Nanosphere such as Fig. 2 (b), the n-type GaN layer nanometer ball array under scanning electron microscope observed of the surface with nanometer ball array
Structure, as shown in Figure 3；
It reuses ICP etching technique and obtains the nano graph that height is 10nm, obtain the n-type GaN layer with nano graph
Such as Fig. 2 (c)；
Then the nanosphere on n-type GaN layer surface is washed with glue and the HF acid solution of configuration, is obtained with nanometer figure
The n-type GaN layer of shape such as Fig. 2 (d), the structure that there is the n-type GaN layer of nano graph to observe under scanning electron microscope is as indicated at 4.
Step D grows In0.35Ga0.65N single quantum dot structure, such as Fig. 2 (e).
Flow in the n-type GaN layer with nano graph using MOCVD device in reaction chamber nitrogen source is maintained at
28000sccm, temperature are maintained at 850 DEG C, and pressure is maintained at 380Torr, and gallium source flux remains 340sccm, and indium source flux is protected
It holds as under conditions of 1000sccm, growth thickness is the In of 20nm0.35Ga0.65N single quantum dot.
Step E grows p-type GaN layer, such as Fig. 2 (f).
In In0.35Ga0.65On N single quantum dot using MOCVD device reaction chamber temperature be 950 DEG C, pressure 250Torr,
Ammonia flow is 45000sccm, and gallium source flux is 45sccm, and under conditions of magnesium source flux is 2200sccm, growth thickness is
The p-type GaN layer of 250nm；Reaction chamber temperature is maintained 800 DEG C later, in N2Under atmosphere, anneal 10min, completes to luminous wave
The green quantum point luminescent diode of a length of 505nm makes.
Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for this
It, all may be without departing substantially from the principle of the present invention, structure after understand the content of present invention and principle for the professional in field
In the case of, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still
Within the scope of the claims of the present invention.
Claims (9)
1. a kind of bluish-green light emitting diode with quantum dots based on nano graph includes: substrate layer (1), n-type GaN layer from bottom to top
(2)、InxGa1-xN single quantum dot layer (3) and p-type GaN layer (4), it is characterised in that: be equipped with diameter on n-type GaN layer (2)
It 20-200nm, is highly 3-30nm, and the nano graph being evenly distributed, InxGa1-xN (3) single quantum dot layer is located at nano graph
On, to improve the charge transfer efficiency of quantum dot, reduce surface dislocation density.
2. light emitting diode according to claim 1, it is characterised in that: the InxGa1-xN single quantum dot layer (3) is thick
Degree is 5-50nm, and the adjusting range of In content x is 0.15-0.5.
3. light emitting diode according to claim 1, it is characterised in that: the p-type GaN layer (4) with a thickness of 100-
400nm。
4. light emitting diode according to claim 1, it is characterised in that: the thickness of the N-shaped GaN structure (2) of nano graph
For 2000-4000nm, doping concentration adjusting range is 6 × 1017cm-1-6×1018cm-1。
5. light emitting diode according to claim 1, it is characterised in that: the substrate layer (1) uses sapphire or silicon
Or silicon carbide.
6. a kind of preparation method of the bluish-green light emitting diode with quantum dots based on nano graph, which is characterized in that including walking as follows
It is rapid:
1) in MOCVD reacting furnace, heat pre-treatment is carried out to substrate, heating temperature is 1100-1300 DEG C；
2) n-type GaN layer of MOCVD device growth 2000-4000nm is utilized on substrate after the pre-treatment；
3) n-type GaN layer that surface has nanometer ball array is obtained using czochralski method or method of spin coating in n-type GaN layer, received
The diameter of rice ball is 20-200nm, and nanosphere solution concentration is 5%-15%；
4) the N-shaped GaN with nano graph is obtained using ICP etching technique in n-type GaN layer of the surface with nanometer ball array
Layer, wherein etched thickness is 3-30nm, washes nanosphere in the HF acid solution for going glue and configuration after etching；
5) In for being 5-50nm using MOCVD device growth thickness in the n-type GaN layer with nano graphxGa1-xThe mono- quantum of N
Point layer, the component x range of In are 0.15-0.5；
6) in InxGa1-xThe p-type GaN layer for being 100-400nm using MOCVD device growth thickness on N single quantum dot layer later will
Reaction chamber temperature maintains 750-850 DEG C, in N2Under atmosphere, anneal 5-10min, completes the system to light emitting diode with quantum dots
Make.
7. according to the method described in claim 6, it is characterized in that, step 2) in utilize MOCVD device growing n-type GaN layer,
Process conditions are as follows:
Reaction chamber temperature is 1050-1100 DEG C,
Holding chamber pressure is 300-350Torr,
It is passed through the ammonia that flow is 25000-30000sccm and the silicon source that flow is 8-20sccm simultaneously into reaction chamber.
8. according to the method described in claim 6, it is characterized in that, growing In using MOCVD device in step 4)xGa1-xThe mono- amount of N
Son point layer, process conditions are as follows:
Reaction chamber temperature is 800-900 DEG C,
Holding chamber pressure is 350-400Torr,
It is passed through the ammonia that flow is 25000-30000sccm and the indium source that flow is 480-1600sccm simultaneously into reaction chamber.
9. according to the method described in claim 6, it is characterized in that, step 5) in using MOCVD device grow p-type GaN layer,
Process conditions are as follows:
Reaction chamber temperature is 950-1100 DEG C,
Holding chamber pressure is 150-250Torr,
It is passed through the ammonia that flow is 35000-45000sccm, magnesium source and the stream that flow is 1800-2200sccm simultaneously to reaction chamber
Amount is the gallium source of 35-45sccm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060027133A (en) * | 2004-09-22 | 2006-03-27 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing led |
| US20070176162A1 (en) * | 2006-01-27 | 2007-08-02 | Lg Innotek Co., Ltd. | Nitride semiconductor light-emitting device and method for manufacturing the same |
| CN101315968A (en) * | 2008-07-04 | 2008-12-03 | 西安电子科技大学 | Production method of GaN multi-layer quantum point photoelectric material |
| CN102244167A (en) * | 2011-07-28 | 2011-11-16 | 北京大学 | Method for preparing single chip white light LED (light-emitting diode) |
-
2019
- 2019-03-06 CN CN201910169560.2A patent/CN110098292B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060027133A (en) * | 2004-09-22 | 2006-03-27 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing led |
| US20070176162A1 (en) * | 2006-01-27 | 2007-08-02 | Lg Innotek Co., Ltd. | Nitride semiconductor light-emitting device and method for manufacturing the same |
| CN101315968A (en) * | 2008-07-04 | 2008-12-03 | 西安电子科技大学 | Production method of GaN multi-layer quantum point photoelectric material |
| CN102244167A (en) * | 2011-07-28 | 2011-11-16 | 北京大学 | Method for preparing single chip white light LED (light-emitting diode) |
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