CN110098260A - A kind of preparation method of broad stopband TmSnO semiconductor thin-film transistor - Google Patents
A kind of preparation method of broad stopband TmSnO semiconductor thin-film transistor Download PDFInfo
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- CN110098260A CN110098260A CN201910287859.8A CN201910287859A CN110098260A CN 110098260 A CN110098260 A CN 110098260A CN 201910287859 A CN201910287859 A CN 201910287859A CN 110098260 A CN110098260 A CN 110098260A
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- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000005669 field effect Effects 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 238000005457 optimization Methods 0.000 claims abstract description 4
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000009279 wet oxidation reaction Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 238000000053 physical method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a kind of preparation methods of broad stopband TmSnO semiconductor thin-film transistor, semiconductor thin-film transistor preparation method is sequentially prepared rare earth element Tm doping SnO using magnetron sputtering method the following steps are included: silicon substrate of the offer one with silica dioxide medium layer on it2Active layer and transparent conductive film source-drain electrode.The present invention is using physical method by rare earth Tm element doping into SnO2In film, SnO restrained effectively2The forbidden bandwidth of the Lacking oxygen of semiconductor, the TmSnO film being prepared is greater than 3.8 eV.The TmSnO film being prepared is applied to transistor, obtained field-effect thin film transistor (TFT) has excellent comprehensive performance, and the field-effect mobility of optimization is greater than 5.0 cm2V‑1s‑1, on-off ratio is greater than 107, threshold voltage is greater than -3 V, and subthreshold swing is less than 0.7 Vdec‑1, there is certain industrial application prospect.
Description
Technical field
The invention belongs to semiconductor thin-film transistor preparation technical fields, and in particular to a kind of broad stopband TmSnO semiconductor
The preparation method of film and the application in terms of transistor.
Background technique
With the continuous development of ultra high-definition display technology, no matter in terms of cost or mobility, all to thin film transistor (TFT)
More stringent requirements are proposed, this depends on the expansion of New Active layer material type and the optimization of device architecture.
SnO2It is a kind of broad stopband n-type semiconductor, forbidden bandwidth is greater than 3.5 eV, therefore is widely used in transparent electricity
Sub- devices field.With the continuous development of display technology with the extensive demand of people, consuming excessively for phosphide material bring a system
The environmental problem and cost increase of column, because the crustal abundance of phosphide element is only 0.25 ppm(part per million), only adjacent S n
/ 10th of element, and Sn element has electronic structure similar with indium, and the 5s of its spherical distribution0Electron orbit is mutual
It is overlapping, constitute SnO2The main body at conduction band bottom, to be easily achieved higher mobility.However, experiment shows pure SnO2Semiconductor film
Film has the Lacking oxygen of higher concentration, is difficult to obtain lower off-state current, therefore pure SnO under regular situation2Transistor has
Poor carrier modulation characteristic.With conventional semiconductor dopant such as Bi2O3It compares, rare earth Tm2O3It is wide with biggish forbidden band
It spends (> 5 eV), and crustal abundance is greater than bismuth element (thulium: 0.27 ppm, bismuth: 0.009 ppm), theoretically, TmSnO film tool
Have than pure SnO2The bigger bandwidth of film, it is meant that the higher transparency.In addition, Tm2O3Have stronger heat steady together with silicon
Qualitative and chemical stability.Therefore, it attempts for the first time herein toward SnO2Rare earth Tm doping is carried out in active layer, it is found that the introducing of Tm makes
Obtain SnO2The forbidden bandwidth of film obtains effectively broadening (> 3.8 eV), and the off-state current of corresponding device is close to 10-12A, and ON state
Electric current remains within a higher level, this has benefited from the light dope of Tm.The experimental results showed that Tm element is a kind of good
Good dopant, not only can effectively widen the forbidden bandwidth of film, while the overall performance of device reach one to connect
The level received.
Summary of the invention
It is an object of the invention to propose that a kind of structure is simple, TmSnO semiconductive thin film crystal in broad stopband of good performance
Pipe and preparation method thereof.
A kind of broad stopband TmSnO semiconductor thin-film transistor proposed by the present invention, the broad stopband TmSnO semiconductive thin film
Transistor is made of substrate, insulating layer, active layer and source-drain electrode from bottom to top, in which:
(1) substrate is used as gate electrode；
(2) insulating layer is commercial silicon oxide film, on substrate by wet oxidation growth, and by mechanical polishing；
(3) active layer is the SnO for adulterating Tm2Film is denoted as TmSnO film, and the active layer growth is on the insulating layer；
(4) material of source-drain electrode is transparent conductive film, is grown on active layer and insulating layer.
In the present invention, the substrate is p-type heavily doped silicon substrate.
In the present invention, it is described commercialization silicon oxide film be 100 ~ 300 nm wet oxidation SiO2Film.
The preparation method of TmSnO semiconductor thin-film transistor in broad stopband proposed by the present invention, the specific steps are as follows:
(1) insulating layer is grown on substrate by wet oxidation, and by mechanical polishing；
(2) it prepares TmSnO active layer: using radio-frequency magnetron sputter method, target used is Tm-SnO mosaic target, is obtained in step (1)
To insulating layer on deposit TmSnO channel layer；The radio-frequency magnetron sputter method substrate temperature is room temperature, and radio-frequency power is 40 ~ 60
W；Sputtering atmosphere is the mixed gas of argon gas and oxygen, and argon gas and oxygen flow ratio are 30 ~ 40, and total gas pressure is 0.2 ~ 0.3 Pa；
(3) it prepares source-drain electrode: on the TmSnO channel layer that step (2) obtains, using radio-frequency magnetron sputter method, depositing the source ITO
Drain electrode；
(4) step (3) obtained device is subjected to air anneal processing, obtains rare earth Tm doping SnO2Thin film transistor (TFT).
In the present invention, the insulating layer is using commercially with 100 ~ 300 nm wet oxidation SiO2Film.
In the present invention, in step (2) described magnetron sputtering method, active layer is patterned using stainless steel mask.
In the present invention, TmSnO active layer described in step (2), wherein the atomic ratio of Tm and Sn is 1 ~ 2 at.%, active layer
With a thickness of 4 ~ 8 nm.
In the present invention, ITO source-drain electrode described in step (3), preparation condition are as follows: substrate temperature is room temperature, radio frequency function
Rate is 50 ~ 100 W, and sputtering atmosphere is pure argon, and total gas pressure is 0.4 ~ 0.7 Pa.
In the present invention, the processing of air anneal described in step (4), annealing temperature is 250 ~ 350 DEG C, and annealing time is 1 ~ 2
h。
TmSnO semiconductor thin-film transistor in broad stopband prepared by the present invention and pure SnO2Transistor is compared, and is effectively inhibited
SnO2The device field-effect mobility of the oxygen vacancy concentration of semiconductor, optimization is greater than 5.0 cm2V-1s-1, on-off ratio is greater than 107,
Threshold voltage is greater than -3 V, and subthreshold swing is less than 0.7 Vdec-1。
The beneficial effects of the present invention are: TmSnO thin film transistor (TFT) (TmSnO-TFTs) provided by the invention has structure
Simply, preparation-obtained device synthesis is had excellent performance, and has certain prospects for commercial application.
Detailed description of the invention
Fig. 1 show device architecture schematic diagram.
Fig. 2 is the TmSnO film X ray diffracting spectrum prepared in embodiment 2, only weaker SnO2(211) crystal face,
Show that the crystalline quality of sample is poor.
Fig. 3 is the forbidden bandwidth of the TmSnO film prepared in embodiment 2, and forbidden bandwidth is about 3.841 eV.
Fig. 4 is the fine power spectrum at the peak Tm 4d3/2 of the TmSnO film prepared in embodiment 2, and main peak is located at 176.2 eV,
Corresponding to three valence states of Tm, satellite peak is brought by rare earth element.
Fig. 5 is the transfer characteristic curve of the TmSnO thin film transistor (TFT) of embodiment 1, example 2, example 3.
Fig. 6 is the output characteristic curve of the TmSnO thin film transistor (TFT) of embodiment 2.
Specific embodiment
Below by example, the present invention is further explained.
Embodiment 1
The TmSnO-TFTs structural schematic diagram of the present embodiment is as shown in Figure 1, specifically include following several parts:
Gate electrode is heavily-doped p-type silicon substrate；
Commercial SiO2Insulating layer, wet oxidation are grown on above-mentioned silicon substrate；
TmSnO active layer is grown in above-mentioned SiO2On insulating layer；
Source-drain electrode is transparent conductive film, is grown on above-mentioned active layer.
The preparation method of TmSnO-TFTs described in the present embodiment, comprises the following steps:
(1) using radiofrequency magnetron sputtering technology in SiO2TmSnO film is deposited on dielectric layer, specifically: by argon gas and oxygen
Flow-ratio control adjusts high threshold and controls sputtering pressure in 0.3 Pa 40, and radio-frequency power is 60 W, and substrate temperature is room temperature,
TmSnO active layer is deposited on silicon wafer, target used is Tm-SnO mosaic target, and Tm doping content is 1.2 at.%；
(2) ITO source-drain electrode is deposited on above-mentioned TmSnO active layer, specifically: in pure argon environment, adjusting high threshold will splash
Pressure control is penetrated in 0.6 Pa, radio-frequency power is adjusted to 60 W, and substrate temperature is room temperature.
Electricity is carried out to the above-mentioned TmSnO thin film transistor (TFT) being prepared using 4200 semi-conductor test instrument of Keithley
Performance test.It is the transfer characteristic curve of thin film transistor (TFT) shown in Fig. 5.Test result shows: being prepared under the process conditions
TmSnO-TFTs field-effect mobility be 6.3 cm2V-1s-1, on-off ratio 5.2 × 106, -10.0 V of threshold voltage, subthreshold value pendulum
0.654 Vdec-1。
Embodiment 2
The TmSnO-TFTs structural schematic diagram of the present embodiment is the same as embodiment 1.
The preparation method of TmSnO-TFTs described in the present embodiment, comprises the following steps:
(1) using radiofrequency magnetron sputtering technology in SiO2TmSnO film is deposited on dielectric layer, specifically: by argon gas and oxygen
Flow-ratio control adjusts high threshold and controls sputtering pressure in 0.3 Pa, radio-frequency power is adjusted to 60 W, and substrate temperature is room 40
Temperature deposits TmSnO active layer on silicon wafer, and target used is Tm-SnO mosaic target, and Tm doping content is 1.6 at.%；
(2) ITO source-drain electrode is deposited on above-mentioned TmSnO active layer, specifically: in pure argon environment, adjusting high threshold will splash
Pressure control is penetrated in 0.6 Pa, radio-frequency power is adjusted to 60 W, and substrate temperature is room temperature.
Electricity is carried out to the above-mentioned TmSnO thin film transistor (TFT) being prepared using 4200 semi-conductor test instrument of Keithley
Performance test.It is the transfer characteristic curve of thin film transistor (TFT) shown in Fig. 5, is the output characteristic curve of thin film transistor (TFT) shown in Fig. 6.
Test result shows: the TmSnO-TFTs field-effect mobility being prepared under the process conditions is 5.5 cm2V-1s-1, on-off ratio
2.9×107, -2.3 V of threshold voltage, 0.618 Vdec of subthreshold swing-1。
Embodiment 3
The TmSnO-TFTs structural schematic diagram of the present embodiment is the same as embodiment 1.
The preparation method of TmSnO-TFTs described in the present embodiment, comprises the following steps:
(1) using radiofrequency magnetron sputtering technology in SiO2TmSnO film is deposited on dielectric layer, specifically: by argon gas and oxygen
Flow-ratio control adjusts high threshold and controls sputtering pressure in 0.3 Pa, radio-frequency power is adjusted to 60 W, and substrate temperature is room 40
Temperature deposits TmSnO active layer on silicon wafer, and target used is Tm-SnO mosaic target, and Tm doping content is 2.0 at.%；
(2) ITO source-drain electrode is deposited on above-mentioned TmSnO active layer, specifically: in pure argon environment, adjusting high threshold will splash
Pressure control is penetrated in 0.6 Pa, radio-frequency power is adjusted to 60 W, and substrate temperature is room temperature.
Electricity is carried out to the above-mentioned TmSnO thin film transistor (TFT) being prepared using 4200 semi-conductor test instrument of Keithley
Performance test.It is the transfer characteristic curve of thin film transistor (TFT) shown in Fig. 5.Test result shows: being prepared under the process conditions
TmSnO-TFTs field-effect mobility be 1.8 cm2V-1s-1, on-off ratio 3.8 × 106, 4.5 V of threshold voltage, subthreshold swing
0.917 Vdec-1。
Claims (9)
1. a kind of broad stopband TmSnO semiconductor thin-film transistor, which is characterized in that the semiconductor thin-film transistor is from bottom to top
It is made of substrate, insulating layer, active layer and source-drain electrode, in which:
(1) substrate is used as gate electrode；
(2) insulating layer is commercial silicon oxide film, and wet oxidation is grown on substrate, and by mechanical polishing；
(3) active layer is the SnO for adulterating Tm2Film is denoted as TmSnO film, and the active layer growth is on the insulating layer；
(4) source-drain electrode materials are transparent conductive film, are grown on active layer and insulating layer.
2. TmSnO semiconductor thin-film transistor in broad stopband according to claim 1, which is characterized in that the substrate is p-type
Heavily doped silicon.
3. TmSnO semiconductor thin-film transistor in broad stopband according to claim 1, which is characterized in that the commercial oxidation
Silicon thin film is the wet oxidation SiO of 100 ~ 300 nm2Film.
4. a kind of preparation method of TmSnO semiconductor thin-film transistor in broad stopband as described in claim 1, which is characterized in that
Specific step is as follows:
(1) insulating layer is grown on substrate by wet oxidation, and by mechanical polishing；
(2) it prepares TmSnO active layer: using radio-frequency magnetron sputter method, target used is Tm-SnO mosaic target, is obtained in step (1)
To insulating layer on deposit TmSnO channel layer, the radio-frequency magnetron sputter method control base board temperature be room temperature, radio-frequency power 40
~ 60 W, sputtering atmosphere are the mixed gas of argon gas and oxygen, and argon gas and oxygen flow ratio are 30 ~ 40, and total gas pressure is 0.2 ~ 0.3
Pa；
(3) it prepares source-drain electrode: on the TmSnO channel layer that step (2) obtains, using radio-frequency magnetron sputter method, depositing the source ITO
Drain electrode；
(4) step (3) obtained device is subjected to air anneal processing, obtains rare earth Tm doping SnO2Thin film transistor (TFT).
5. the preparation method according to claim 4, which is characterized in that in step (2) described magnetron sputtering method, use is stainless
Steel mask plate is patterned active layer.
6. the preparation method according to claim 4, which is characterized in that TmSnO active layer described in step (2), wherein Tm
Be 1 ~ 2 at.% with the atomic ratio of Sn, active layer with a thickness of 4 ~ 8 nm.
7. the preparation method according to claim 4, which is characterized in that ITO source-drain electrode described in step (3), preparation
Condition are as follows: substrate temperature is room temperature, and radio-frequency power is 50 ~ 100 W；Sputtering atmosphere is pure argon, and total gas pressure is 0.4 ~ 0.7
Pa。
8. the preparation method according to claim 4, which is characterized in that the processing of air anneal described in step (4), annealing temperature
Degree is 250 ~ 350 DEG C, and annealing time is 1 ~ 2 h.
9. a kind of TmSnO semiconductor thin-film transistor in broad stopband as described in claim 1, it is characterised in that Tm3+It is doped into
SnO2In semiconductor, SnO restrained effectively2The device field-effect mobility of the oxygen vacancy concentration of semiconductor, optimization is greater than 5.0
cm2V-1s-1, on-off ratio is greater than 107, threshold voltage is greater than -3 V, and subthreshold swing is less than 0.7 Vdec-1。
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| US20150280000A1 (en) * | 2014-03-25 | 2015-10-01 | Samsung Electronics Co., | Transistors, methods of manufacturing the same, and electronic devices including transistors |
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| WO2018169024A1 (en) * | 2017-03-17 | 2018-09-20 | Ricoh Company, Ltd. | Field-effect transistor, method for producing same, display element, display device, and system |
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-
2019
- 2019-04-11 CN CN201910287859.8A patent/CN110098260A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20150280000A1 (en) * | 2014-03-25 | 2015-10-01 | Samsung Electronics Co., | Transistors, methods of manufacturing the same, and electronic devices including transistors |
| CN109478560A (en) * | 2016-07-20 | 2019-03-15 | 株式会社理光 | Field effect transistor and preparation method thereof, display element, image display device and system |
| WO2018169024A1 (en) * | 2017-03-17 | 2018-09-20 | Ricoh Company, Ltd. | Field-effect transistor, method for producing same, display element, display device, and system |
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| Title |
|---|
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