CN110091442A - A kind of cutter and cutting method for cut crystal - Google Patents
A kind of cutter and cutting method for cut crystal Download PDFInfo
- Publication number
- CN110091442A CN110091442A CN201910400682.8A CN201910400682A CN110091442A CN 110091442 A CN110091442 A CN 110091442A CN 201910400682 A CN201910400682 A CN 201910400682A CN 110091442 A CN110091442 A CN 110091442A
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- Prior art keywords
- blade
- cutter
- size
- chip
- particulate matter
- Prior art date
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
The present invention relates to a kind of cutters for cut crystal, comprising: the first blade, with the surface made of the particulate matter with first size；Second blade is arranged in the first side of the first blade, so that the second blade at least partly covers the first side of the first blade, wherein with the surface made of the particulate matter with the second size and wherein the second size is less than first size to second blade；And third blade, its second side for being arranged in the first blade, so that third blade at least partly covers second side of the first blade, wherein the third blade is with the surface made of the particulate matter with third size, and wherein, third size is less than first size.By the invention it is possible to stress damage semiconductor devices or substrate where it are effectively prevented from, to improve the yield and reliability of chip.
Description
Technical field
Present invention is generally directed to field of semiconductor manufacture, in particular to a kind of cutter for cut crystal.
Moreover, it relates to a kind of method for using cutting tool according to the present invention cut crystal.
Background technique
Nowadays, electronic product has been deep into the every aspect of the modern life.And such as computer, mobile phone etc is big
The core component of most electronic products, such as processor, memory all contain semiconductor devices.Semiconductor devices is believed in the modern times
Play the part of vital role in breathization equipment.
Chip (also known as wafer) cutting is a significant process in semiconductor technology, is intended to usually to have been formed and partly lead
The chip of body structure (such as image sensor chip etc.) carries out being cut so that the semiconductor structure is physically separate from each other.
At present mainly by laser or cutting tool come cut crystal.With semiconductor integration densities require continuous improvement,
Need to increase the number of chips on every chip, it is thus necessary to be gradually reduced the scribing groove area of cutting region.Using machinery
In the case where cutter cutting technique, reduced cutting region can improve the risk of generated stress damage chip when cutting.
Figure 1A -1B respectively illustrates the cutting process and cutting tool of conventional images sensor wafer, and wherein the region d is to set
Set between neighboring image sensors for the scribe line cut.As seen in figs. 1 a-1b, in the cutting process of the prior art
In, as the area of scribe line d constantly reduces, cutting tool 21 is passed in cutting with semiconductor structure, such as image on chip
The distance of sensor also constantly reduces.Which increase the risks of substrate where stress damage chip generated when cutting or chip.
From the Chinese patent application of entitled " semiconductor devices and forming method thereof, the cutting method " of the applicant
A kind of cutting scheme is disclosed in 201811455757.4, wherein be disposed with isolation structure in scribe line, wherein dissection
In isolation structure, the isolation structure reduces stress and continues to transmit to the inside of semiconductor structure as stress release space, from
And reduce the damage to the bearing wafer of semiconductor structure.However, in this scenario, being needed cutter accurately in cutting
It is directed at isolation structure, otherwise stress still may be transmitted to semiconductor structure.In addition, using the program, still
It is possible that the case where stress damage semiconductor devices or its place substrate.
Summary of the invention
Lead to from the prior art the task of the present invention is a kind of cutter and cutting method for cut crystal is provided
The cutter and/or this method are crossed, stress damage semiconductor devices or substrate where it can be effectively avoided, to improve chip
Yield and reliability.
In the first aspect of the present invention, which is solved by a kind of cutter for cut crystal, which includes:
First blade, with the surface made of the particulate matter with first size；
Second blade is arranged in the first side of the first blade, so that the second blade at least partly covers the first blade
The first side, wherein second blade is with the surface made of the particulate matter with the second size and wherein the second size
Less than first size；And
Third blade is arranged in second side of the first blade, so that third blade at least partly covers the first blade
Second side, wherein the third blade is with the surface made of the particulate matter with third size, and wherein third ruler
It is very little to be less than first size.
In the present invention it should be noted that " surface is made of the particulate matter with certain size " refers to that the surface is included
Particulate matter is substantially the size, without referring to that whole particulate matters that the surface is included all are utterly the size, but is permitted
Perhaps there are reasonable errors for the size of each particulate matter, as long as can be realized technical effect of the invention.
It is provided in a preferred embodiment of the invention, the chip includes the scribing for being cut with the cutter
Slot, and wherein the scribe line includes the isolation structure made of the material different from the material of chip, and the first blade
Thickness correspond to the distance between isolation structure, and the thickness of the second blade and third blade correspond respectively to accordingly every
Thickness from structure.By the preferred embodiment, the wind of stress damage semiconductor devices or substrate where it can be further decreased
Danger, because the isolation structure due to different from the material of chip, potentially acts as stress release space in cutting, reduction is answered
Power continues to transmit to the inside of semiconductor structure, to reduce the damage to the bearing wafer of semiconductor structure.It is preferred at this
In scheme, need to cut bit alignment isolation structure in cutting.Isolation structure for example including convenient for cutting material,
Material such as more smaller than substrate hardness.
Provided in an expansion scheme of the invention, the material of the isolation structure include one in the following or
It is multiple: silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium and carbon silicon oxynitride.
It is provided in another expansion scheme of the invention, the particulate matter is gravel.It should be noted here that knife of the invention
Tool material or tool surface material are not limited to gravel, but can use other particulate matters, such as boron nitride particle, boron carbide
Grain, corundum in granules, carbide (such as silicon carbide) particle.It, can be with the material of unrestricted choice cutter according to application difference.
Provided in another expansion scheme of the invention, the end of the first, second, and third blade each other gentle transition with
Form the curved end of cutter.By the expansion scheme, the cutter ends with the continuous shape of arc can be formed, thus more preferably
Ground is adapted to cutting task.Under the teachings of the present invention, according to different application, other cutter ends shapes are also that can be envisaged
's.In the case where other cutter ends shapes, the end of the first, second, and third blade can be configured accordingly to form three
Desired shape after person's engagement.
It is provided in another expansion scheme of the invention, the cutter is the annular with circular hole placed in the middle.According to applied field
It closes, other shapes of cutter is also conceivable.
It is provided in another expansion scheme of the invention, is formed with image sensor chip on the wafer.In addition to figure
As sensor chip, present invention can also apply to other semiconductor fabrication process.
It is provided in another expansion scheme of the invention, the two sides of the scribe line is provided with protection ring.Pass through setting
Protection ring can prevent cutter from deviateing scribe line.
In the second aspect of the present invention, foregoing task is solved by a kind of wafer cutting device, which has
Cutting tool according to the present invention.
In the third aspect of the present invention, foregoing task is by a kind of for using cutting tool according to the present invention cut crystal
Method solves, and this method includes the following steps:
By the cutting position of the first alignment blade chip of cutter；And
Use cutter cut crystal.
Here, cutting angle, i.e. cutter are preferably perpendicular to cutting surfaces.In addition, the case where being provided with isolation structure
Under, it needs in cutting by bit alignment isolation structure, then cut.
The present invention is based on inventor as follows see clearly: the present inventor it has been investigated that, in chip cutting process, cutter
Tool is ground and is removed to scribe line silicon materials by its particulate matter (such as gravel) carried, therefore the cut surface of chip
(i.e. the cutting interface of substrate where chip) nearby can lead to crack/chipping due to the stress generated when cutting, wherein cutter
Gravel size it is bigger, crack/chipping is more serious；Cutting tool is designed to composite structure by cutter of the invention, wherein in knife
The middle part setting larger size particulate matter of tool to provide enough grindings or cutting power, and the side of cutter be provided with compared with
Thus small sized particles object can be effectively prevented from stress damage semiconductor devices or its place to reduce crack/chipping risk
Substrate, to improve the yield and reliability of chip.
Detailed description of the invention
With reference to specific embodiment, the present invention is further explained with reference to the accompanying drawing.
Figure 1A -1B shows the cutting process and cutting tool of image sensor wafer according to prior art；
Fig. 2 shows the schematic diagrames of the cutter according to the present invention for cut crystal；And
Fig. 3 A-3B shows the main view and top view of the cutter according to the present invention for cut crystal.
Specific embodiment
It should be pointed out that each component in each attached drawing may be shown in which be exaggerated in order to illustrate, and it is not necessarily ratio
Example is correctly.In the drawings, identical appended drawing reference is equipped with to the identical component of identical or function.
In the present invention, unless otherwise indicated, " on being arranged in ... ", " being arranged in ... top " and " on being arranged in ... "
Do not exclude the case where there are intermediaries therebetween.
In the present invention, each embodiment is intended only to illustrate the solution of the present invention, and is understood not to restrictive.
In the present invention, unless otherwise indicated, quantifier "one", " one " and the scene for not excluding element.
It is also noted herein that in an embodiment of the present invention, for it is clear, for the sake of simplicity, might show only one
Sub-unit or component, but those skilled in the art are it is understood that under the teachings of the present invention, it can be according to concrete scene
Need to add required component or component.
It is also noted herein that within the scope of the invention, the wording such as " identical ", " equal ", " being equal to " are not meant to
The two numerical value is absolutely equal, but allows certain reasonable error, that is to say, that the wording also contemplated " substantially phase
Together ", " being essentially equal ", " being substantially equal to " meaning.And so on, in the present invention, the term " perpendicular to " of apparent bearing,
" being parallel to " etc. has been likewise covered by the meaning of " being substantially perpendicular to ", " being arranged essentially parallel to ".
In addition, the number of the step of each method of the invention limit the method step execute sequence.Unless special
It does not point out, various method steps can be executed with different order.
Fig. 2 shows the schematic diagrames of the cutter 100 according to the present invention for cut crystal.
Cutting tool according to the present invention 100 is used for cut crystal 106.Both such as image can be already formed on chip 106
The semiconductor structure of sensor etc, can also be with not formed any semiconductor structure.Cutting tool according to the present invention 100 can be effectively
It reduces and is damaged caused by crack/crack and other stress near cut surface, so as to improve yields, improve semiconductor device
The quality of part.In addition, being optionally disposed with protection ring 107 and isolation structure 108 on chip 106.The setting of protection ring 107 is being drawn
The two sides of film trap (i.e. cutting part), i.e. at least partially around scribe line, to prevent cutter 100 from deviateing scribe line.Isolation junction
Structure 108 is arranged in the scribe line in chip 106, and wherein isolation structure 108 is different from the material of chip 106.By setting
Isolation structure 108 is set, the risk of stress damage semiconductor devices or substrate where it can be further decreased, because of the isolation junction
Structure potentially acts as stress release space in cutting due to different from the material of chip, reduces stress and continues to semiconductor
The inside of structure is transmitted, to further decrease the damage to the bearing wafer of semiconductor structure on the basis of the present invention.But
It is that should be pointed out that protection ring 106 and isolation structure 108 are not required, in other embodiments, these knots can be not provided with
Structure.
As shown in Fig. 2, cutting tool according to the present invention 100 includes following component:
First blade 101, is made of the particulate matter with first size.In other embodiments, the first blade 101
Can also only have the surface made of the particulate matter of first size, such as cutting surfaces.The particulate matter is, for example, gravel (sand
Grain and/or gravel), boron nitride particle, boron carbide particles, corundum in granules, carbide (such as silicon carbide) particle.In the present invention
In it should be noted that " blade or surface are made of the particulate matter with certain size " refers to, particle that the blade or surface are included
Object is substantially the size, and whole particulate matters without referring to the blade or surface is included all are utterly the size, but
Allowing the size of each particulate matter, there are reasonable errors, as long as can be realized technical effect of the invention, reducing answering for cut surface
Power.
Second blade 102 is arranged in the first side (being herein left side) of the first blade 101, so that the second blade 102
The first side of the first blade 101 is at least partly covered, wherein second blade 102 is by the particulate matter system with the second size
At, and wherein the second size is less than first size.In other embodiments, the second blade 102 can also only have by the
Surface made of the particulate matter of two sizes, such as cutting surfaces.Second size is less than first size and for example refers to, of the second size
The average-size (partial size) of grain is less than the average-size (partial size) of the particle of first size.Here, the second blade 102 is substantially complete
First side of the first blade of all standing 101, but in other embodiments, the two for example can be not exclusively overlapped at center.Institute
Stating particulate matter is, for example, gravel (sand grains and/or gravel), boron nitride particle, boron carbide particles, corundum in granules, carbide (such as carbon
SiClx) particle etc..
Third blade 103 is arranged in second side (being herein right side) of the first blade 101, so that third blade 103
Second side of the first blade 101 is at least partly covered, wherein the third blade 102 is by the particulate matter system with third size
At, and wherein third size is less than first size.In other embodiments, third blade 103 can also only have by the
Surface made of the particulate matter of three sizes, such as cutting surfaces.Third size is less than first size and for example refers to, of third size
The average-size (partial size) of grain is less than the average-size (partial size) of the particle of first size.Here, third blade 103 is substantially complete
Second side of the first blade of all standing 101, but in other embodiments, the two for example can be not exclusively overlapped at center.Institute
Stating particulate matter is, for example, gravel (sand grains and/or gravel), boron nitride particle, boron carbide particles, corundum in granules, carbide (such as carbon
SiClx) particle etc..Wherein the second size and third size are less than first size.Second blade 102 and third blade 103 can be with
It is same or different, for example, both particle average-size it is identical or different.
The end of first, second, and third blade 101-103 may be constructed such that each other gently transition to form cutter
100 curved end 105.According to the difference of application, other shapes are also conceivable.In other cutter ends shapes
In the case of, the end of the first, second, and third blade 101-103 can be configured accordingly with formed three engagement after desired by
Shape.In addition, cutter 100 is constructed with the annular of circular hole placed in the middle referring to Fig. 3 A-3B.In the teachings of the present invention
Under, other shapes and construction it is also contemplated that.
The process of cutting tool according to the present invention cut crystal is described below.
Firstly, cutter 100 to be aligned to the cutting groove or cutting part of chip 106.The case where being disposed with isolation structure 108
Under, the second blade 102 and third blade 103 of cutter 100 are respectively aligned to each isolation structure 108.For example, cutter 100
Side 104 must not exceed isolation structure 108.For this purpose, arrangement of the isolation structure 108 in chip 106 and the second blade 102 and
The thickness of third blade 103 is adapted, and allows them to be aligned, or otherwise the arrangement of the two thickness and isolation structure 108
It is adapted.
Then, chip 106 is cut using cutter 100.In the cutting process, larger of the first blade 101
Grain will provide enough cuttings or grainding capacity, and second and the smaller particle of third blade 102,103 will be produced at cut surface
Raw smaller stress, to reduce the formation of cut surface nearby crack, chipping, crack or other defects, and then improve yields and
Product quality.
The present invention is based on inventor as follows see clearly: the present inventor it has been investigated that, in chip cutting process, cutter
Tool is ground and is removed to scribe line silicon materials by its particulate matter (such as gravel) carried, therefore the cut surface of chip
(i.e. the cutting interface of substrate where chip) nearby can lead to crack/chipping due to the stress generated when cutting, wherein cutter
Gravel size it is bigger, crack/chipping is more serious；Cutting tool is designed to composite structure by cutter of the invention, wherein in knife
The middle part setting larger size particulate matter of tool to provide enough grindings or cutting power, and the side of cutter be provided with compared with
Thus small sized particles object can be effectively prevented from stress damage semiconductor devices or its place to reduce crack/chipping risk
Substrate, to improve the yield and reliability of chip.
Although some embodiments of the present invention are described in present specification, those skilled in the art
Member is it is understood that these embodiments are merely possible to shown in example.Those skilled in the art under the teachings of the present invention may be used
To expect numerous variant schemes, alternative solution and improvement project without beyond the scope of this invention.The appended claims purport
It is limiting the scope of the invention, and is covering the method in the range of these claims itself and its equivalents and knot whereby
Structure.
Reference signs list
10 imaging sensor photosensitive layers
11 image sensor circuit layers
12 articulamentums
13 carrying wafers or digital processing wafer
14 protection rings (Seal ring)
15 peripheral circuits
16 isolation channels
17 filter layers
18 lenticules
19 transmission gate TG
20 metal connecting lines
D scribe line
101 first blades
102 second blades
103 third blades
The side of 104 cutters
The end of 105 cutters
106 chips
107 protection rings
108 isolation structures
Claims (10)
1. a kind of cutter for cut crystal, comprising:
First blade, with the surface made of the particulate matter with first size；
Second blade is arranged in the first side of the first blade, so that the second blade at least partly covers the of the first blade
Side, wherein second blade is with the surface made of the particulate matter with the second size and wherein the second size is less than
First size；And
Third blade is arranged in second side of the first blade, so that third blade at least partly covers the of the first blade
Two sides, wherein the third blade is with the surface made of the particulate matter with third size, and wherein, third size is small
In first size.
2. the cutter according to weighing and require 1, wherein the chip includes the scribe line for being cut with the cutter, and
And wherein the scribe line includes the isolation structure made of the material different from the material of chip, and the thickness of the first blade
Corresponding to the distance between isolation structure, and the thickness of the second blade and third blade corresponds respectively to corresponding isolation structure
Thickness.
3. the cutter according to weighing and require 1, wherein the material of the isolation structure includes one or more of the following:
Silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium and carbon silicon oxynitride.
4. the cutter according to weighing and require 1, wherein the particulate matter is gravel.
5. according to power require 1 described in cutter, wherein the end of the first, second, and third blade each other gentle transition to form knife
The curved end of tool.
6. the cutter according to weighing and require 1, wherein the cutter is the annular with circular hole placed in the middle.
7. the cutter according to weighing and require 1, wherein being formed with image sensor chip on the wafer.
8. the cutter according to weighing and require 2, wherein being provided with protection ring in the two sides of the scribe line.
9. a kind of wafer cutting device has according to claim 1 to cutter described in one of 8.
10. a kind of for using according to claim 1 to the method for cutter cut crystal described in one of 8, including the following steps:
By the cutting position of the first alignment blade chip of cutter；And
Use cutter cut crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910400682.8A CN110091442B (en) | 2019-05-15 | 2019-05-15 | Cutter for cutting wafer and cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910400682.8A CN110091442B (en) | 2019-05-15 | 2019-05-15 | Cutter for cutting wafer and cutting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110091442A true CN110091442A (en) | 2019-08-06 |
| CN110091442B CN110091442B (en) | 2021-07-23 |
Family
ID=67448039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910400682.8A Active CN110091442B (en) | 2019-05-15 | 2019-05-15 | Cutter for cutting wafer and cutting method |
Country Status (1)
| Country | Link |
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| CN (1) | CN110091442B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318206A (en) * | 1999-07-30 | 2001-10-17 | 日本板硝子株式会社 | Method of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN102049814A (en) * | 2010-11-27 | 2011-05-11 | 常州华中集团有限公司 | Diamond saw blade and manufacturing method thereof |
| CN102528942A (en) * | 2011-12-28 | 2012-07-04 | 福建万龙金刚石工具有限公司 | High-efficiency diamond bit and production process thereof |
| CN104973562A (en) * | 2014-04-03 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Wafer cutting method and MEMS wafer cutting method |
| CN106182448A (en) * | 2016-08-19 | 2016-12-07 | 广州晶体科技有限公司 | Sandwich-type gang saw tool bit and manufacture method thereof |
| CN107414085A (en) * | 2017-07-07 | 2017-12-01 | 泉州众志金刚石工具有限公司 | A kind of preparation method of carcass material and fine-granularity diamond saw blade and saw blade |
| CN108453903A (en) * | 2018-02-06 | 2018-08-28 | 佛山市南珠锐普超硬材料制品有限公司 | A kind of Multilayer durable type diamond saw blade and its manufacturing method and application method |
| CN108582504A (en) * | 2018-05-07 | 2018-09-28 | 江苏锋泰工具有限公司 | Energy-efficient diamond saw blade and preparation method thereof |
| CN109585480A (en) * | 2018-11-30 | 2019-04-05 | 德淮半导体有限公司 | Semiconductor devices and forming method thereof, cutting method |
-
2019
- 2019-05-15 CN CN201910400682.8A patent/CN110091442B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318206A (en) * | 1999-07-30 | 2001-10-17 | 日本板硝子株式会社 | Method of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN102049814A (en) * | 2010-11-27 | 2011-05-11 | 常州华中集团有限公司 | Diamond saw blade and manufacturing method thereof |
| CN102528942A (en) * | 2011-12-28 | 2012-07-04 | 福建万龙金刚石工具有限公司 | High-efficiency diamond bit and production process thereof |
| CN104973562A (en) * | 2014-04-03 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Wafer cutting method and MEMS wafer cutting method |
| CN106182448A (en) * | 2016-08-19 | 2016-12-07 | 广州晶体科技有限公司 | Sandwich-type gang saw tool bit and manufacture method thereof |
| CN107414085A (en) * | 2017-07-07 | 2017-12-01 | 泉州众志金刚石工具有限公司 | A kind of preparation method of carcass material and fine-granularity diamond saw blade and saw blade |
| CN108453903A (en) * | 2018-02-06 | 2018-08-28 | 佛山市南珠锐普超硬材料制品有限公司 | A kind of Multilayer durable type diamond saw blade and its manufacturing method and application method |
| CN108582504A (en) * | 2018-05-07 | 2018-09-28 | 江苏锋泰工具有限公司 | Energy-efficient diamond saw blade and preparation method thereof |
| CN109585480A (en) * | 2018-11-30 | 2019-04-05 | 德淮半导体有限公司 | Semiconductor devices and forming method thereof, cutting method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110091442B (en) | 2021-07-23 |
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