CN110073499B - 高效率太阳能电池及高效率太阳能电池的制造方法 - Google Patents
高效率太阳能电池及高效率太阳能电池的制造方法 Download PDFInfo
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- Photovoltaic Devices (AREA)
Abstract
本发明是一种太阳能电池,其特征在于具备:备有具有第1导电型的半导体基板、且在该半导体基板的第1主表面、有与前述第1导电型相反的导电型即第2导电型的发射领域,接在前述发射领域的射极电极,具有前述第1导电型的基极领域,接在前述基极领域的基极电极,与防止前述发射领域与前述基极领域的电性短路的绝缘膜的太阳能电池,前述绝缘膜是由聚酰亚胺所构成;前述绝缘膜在TOF‑SIMS(飞行式二次离子质谱)法将Bi5++离子以加速电压30kV被0.2pA照射时的C6H11O2检出计数为100以下。由此,可以提供耐天候性佳、具有高光电变换特性的太阳能电池。
Description
技术领域
本发明有关高效率太阳能电池及高效率太阳能电池的制造方法。
背景技术
作为使结晶硅太阳能电池的光电变换效率提高的手法,近年,废除受光面的电极而免去电极影子造成光学上损失的所谓的背面电极型太阳能电池受到广泛探讨研究。
图11是显示背面电极型太阳能电池的背面的一例的模式图,此外,图12图示图11的单点虚线A的剖面的一部分。如图11所示,在太阳能电池1100,在半导体基板(例如结晶硅基板)1110的背面(第1主表面),形成发射领域(发射层)1112。此外,挟着发射领域1112,条状形成基极领域(基极层)1113,在发射领域1112上形成射极电极1122,进而把多个射极电极1122用射极汇流条(发射用汇流条(bus bar)电极)1132连结起来。此外,在基极领域1113上形成基极电极1123,把多个基极电极1123用基极汇流条(基极用汇流条电极)1133连结起来。另一方面,基极电极1123与发射领域1112、及射极电极1122与基极领域1113用绝缘膜(绝缘层)1118而被电性绝缘。此外,如图12所示,太阳能电池1100在半导体基板1110的第1主表面及第2主表面上具备保护膜1119。又,在图11省略保护膜1119。
在被用作绝缘膜的材料,要求化学性安定且可使用温度高、或图案形成容易的特性。从这样的要求而言,在绝缘膜大多使用聚酰亚胺树脂(例如专利文献1)。
太阳能电池的绝缘膜形成,可以通过利用网版印刷或喷墨印刷、或者投放器法将绝缘前驱体(绝缘膜前驱体)涂布到基板来进行。在涂布形成聚酰亚胺树脂的场合的前驱体一般上会使用配合聚酰胺酸的溶液。该场合,通过将聚酰胺酸热处理来进行脱水反应与酰亚胺化,得到聚酰亚胺树脂。
现有技术文献
专利文献
专利文献1:日本特开2015-26858号公报
发明内容
发明所要解决的问题
不过,在将使用由配合聚酰胺酸的前驱体而来的聚酰亚胺树脂的太阳能电池置于高温高湿状态时,常常会出现绝缘体会接触的电极与基板的电性接触恶化的问题。
本发明有鉴于上述问题点而作成,目的在于提供耐天候性佳、具有高光电变换特性的太阳能电池及这样的太阳能电池的制造方法。
供解决问题的手段
为了达成上述目的,本发明是一种太阳能电池,备有具有第1导电型的半导体基板,在该半导体基板的第1主表面,具备:有与前述第1导电型相反的导电型即第2导电型的发射领域,接在前述发射领域的射极电极,具有前述第1导电型的基极领域,接在前述基极领域的基极电极,与防止前述发射领域与前述基极领域的电性短路的绝缘膜的太阳能电池,其特征在于前述绝缘膜是由聚酰亚胺所构成;前述绝缘膜在TOF-SIMS(飞行式二次离子质谱)法将Bi5++离子以加速电压30kV,0.2pA照射时的C6H11O2检出计数为100以下。
根据这样的太阳能电池,则耐天候性佳、具有高光电变换特性。
此外,前述绝缘膜最好是被形成将前述发射领域与前述基极电极电性绝缘。
根据这样的太阳能电池,可以利用绝缘膜,防止发射领域与基极电极的电性短路。
此外,前述绝缘膜最好是被形成将前述基极领域与前述射极电极电性绝缘。
根据这样的太阳能电池,可以利用绝缘膜,防止基极领域与射极电极的电性短路。
此外,前述绝缘膜最好是被形成将前述射极电极与前述基极电极电性绝缘。
根据这样的太阳能电池,可以利用绝缘膜,防止射极电极与基极电极的电性短路。
此外,前述半导体基板最好是结晶硅基板。
通过以此方式将半导体基板作成结晶硅基板,能够以低成本作成发电效率良好的太阳能电池。
再者,在本发明,提供一种太阳能电池模块,其特征在于将上述太阳能电池电性地连接而成的太阳能电池模块。
以此方式,可以将本发明的太阳能电池电性地连接而作成太阳能电池模块。
再者,在本发明,提供一种太阳能电池发电***,其特征在于将上述本发明的太阳能电池模块多个连接而成的太阳能电池发电***。
以此方式,电性地连接本发明的太阳能电池的太阳能电池模块,可以多个连接而作成太阳能电池发电***。
再者,在本发明,提供一种太阳能电池的制造方法,具有在有第1导电型的半导体基板的第1主表面,形成有与前述第1导电型相反的导电型即第2导电型的发射领域、与具有前述第1导电型的基极领域的步骤;形成接在前述发射领域的射极电极、与接在前述基极领域的基极电极的步骤;与作为防止前述发射领域与前述基极领域的电性短路的绝缘膜而形成不含羧基的聚酰亚胺的步骤的太阳能电池的制造方法。
根据这样的方法,能够制造出耐天候性佳、具有高光电变换特性的太阳能电池。
此外,作为前述半导体基板最好是使用结晶硅基板。
本发明的方法,特别适宜具备结晶硅基板的太阳能电池的制造。
发明的效果
根据本发明的太阳能电池,则耐天候性佳、具有高光电变换特性。根据本发明的方法,不必步骤变更而可以得到高效率且耐天候性佳的背面电极型太阳能电池。
附图说明
图1图示关于本发明的背面电极型太阳能电池的背面构造。
图2图示关于本发明的背面电极型太阳能电池的剖面构造。
图3图示绝缘膜的TOF-SIMS分析的离子强度质谱。
图4图示关于本发明的其他形态的背面电极型太阳能电池的背面构造。
图5图示关于本发明的其他形态的背面电极型太阳能电池的剖面构造。
图6图示关于本发明的其他形态的背面电极型太阳能电池的不同位置的剖面构造。
图7图示关于本发明的再其他形态的背面电极型太阳能电池的背面构造。
图8图示关于本发明的再其他形态的背面电极型太阳能电池的剖面构造。
图9图示关于本发明的太阳能电池模块。
图10图示关于本发明的太阳能电池发电***。
图11图示一般的背面电极型太阳能电池的背面构造。
图12图示一般的背面电极型太阳能电池的剖面构造。
具体实施方式
以下,更详细说明本发明。
如上述方式,要求耐天候性佳、具有高光电变换特性的太阳能电池。
本案发明人等,为了达成上述目的而进行锐意检讨。结果,发现一种太阳能电池,备有具有第1导电型的半导体基板,在该半导体基板的第1主表面,具备:有与前述第1导电型相反的导电型即第2导电型的发射领域,接在前述发射领域的射极电极,具有前述第1导电型的基极领域,接在前述基极领域的基极电极,与防止前述发射领域与前述基极领域的电性短路的绝缘膜的太阳能电池,其特征在于前述绝缘膜是由聚酰亚胺所构成;前述绝缘膜在TOF-SIMS(飞行式二次离子质谱)法将Bi5++离子以加速电压30kV,0.2pA照射时的C6H11O2检出计数为100以下的太阳能电池可以解决上述课题,完成本发明。
如上述方式,要求耐天候性佳、具有高光电变换特性的太阳能电池的制造方法。
本案发明人等,为了达成上述目的而进行锐意检讨。结果,发现一种太阳能电池的制造方法,具有在有第1导电型的半导体基板的第1主表面,形成有与前述第1导电型相反的导电型即第2导电型的发射领域、与具有前述第1导电型的基极领域的步骤;形成接在前述发射领域的射极电极、与接在前述基极领域的基极电极的步骤;与作为防止前述发射领域与前述基极领域的电性短路的绝缘膜而形成不含羧基的聚酰亚胺的步骤的太阳能电池的制造方法,可以解决上述课题,完成本发明。
以下,针对本发明的实施形态,参照图式并具体地说明,但本发明并不以此为限。
太阳能电池
以下,针对本发明的太阳能电池,使用图式加以说明,但本发明并不以此为限。图1图示关于本发明的背面电极型太阳能电池的背面构造。此外,图2显示关于本发明的背面电极型太阳能电池的剖面构造,图示图1的单点虚线A的剖面的一部分。如图1、2所示,本发明的太阳能电池100具备有第1导电型的半导体基板110。此外,在半导体基板110的第1主表面,具备:有与第1导电型相反的导电型即第2导电型的发射领域112,接在发射领域112的射极电极122,具有第1导电型的基极领域113,接在基极领域113的基极电极123,与防止发射领域112与基极领域113的电性短路的绝缘膜118。
此外,如图1所示,本发明的太阳能电池100,通常具备把从基极电极123得到的电流进而集电用的基极汇流条(bus bar)133。此外,通常具备把从射极电极122得到的电流进而集电用的射极汇流条(bus bar)132。此外,如图2所示,在半导体基板110的第1主表面及第2主表面上通常具备保护膜119。又,在图1省略保护膜119。
在本发明的太阳能电池,绝缘膜118由聚酰亚胺所构成,并且,绝缘膜118在飞行时间型二次离子质量分析(TOF-SIMS)法将Bi5++离子(铋的5量体的2价离子)以加速电压30kV,0.2pA(微微安培)照射时的C6H11O2检出计数为100以下。该检出计数大致为TOF-SIMS法的检出下限左右。此外,含羧基的有机物,在TOF-SIMS利用铋离子照射被弹出的2次离子之中,可以检出作为例如m/z值(m:离子质量数、z:离子电荷数)出现在115附近的C6H11O2的峰值。从而,本发明的太阳能电池,也可说是绝缘膜由几乎或完全不含羧基的聚酰亚胺所构成的太阳能电池。在绝缘膜残留含羧基的有机物,亦即,该计数超过100时耐天候性会显著降低。该理由尚未明确,认为是伴随绝缘膜的吸湿由酰胺酸而来的羧基引发生成羧酸,作用于电极本身或者电极与硅的边界面而使电性电阻恶化。
绝缘膜的形状并没有特别限定,例如可以作成矩形。该场合,绝缘膜一边的长度,例如,可以作成0.01mm~50mm。此外,绝缘膜的厚度,例如,可以作成1~60μm。通过作成这样的长度及厚度,可以使绝缘性更加提升。此外,由于不会过度地形成绝缘膜,而可以更确实地制造出所期待的太阳能电池,亦即,绝缘膜是由不含羧基的聚酰亚胺所构成的太阳能电池。
此外,如图1所示,本发明的太阳能电池100,最好是绝缘膜118被形成将发射领域112与基极电极123电性绝缘。根据这样的太阳能电池,可以利用绝缘膜,防止发射领域与基极电极的电性短路。
此外,如图1所示,本发明的太阳能电池100,最好是绝缘膜118被形成将基极领域113与射极电极122电性绝缘。根据这样的太阳能电池,可以利用绝缘膜,防止基极领域与射极电极的电性短路。
此外,如图1所示,本发明的太阳能电池100,最好是绝缘膜118被形成将射极电极122与基极电极123电性绝缘。根据这样的太阳能电池,可以利用绝缘膜,防止射极电极与基极电极的电性短路。
此外,半导体基板110最好是结晶硅基板。通过以此方式将半导体基板作成结晶硅基板,能够以低成本作成发电效率良好的太阳能电池。
太阳能电池的制造方法
本发明的方法一般上可以适用于使用绝缘体的太阳能电池,于下述边举例边加以说明。例如,本发明的方法,可以适用于上述图1、2所示的太阳能电池。以下,将具体的本发明的太阳能电池制造方法以N型基板的场合为例用图1、2加以说明。
首先,准备N型结晶硅基板等的N型半导体基板。具体而言,可以在高纯度硅里掺杂磷、砷、或锑之类的5价元素,准备比电阻0.1~5Ω·cm的原切割(as-cut)单晶{100}N型硅基板。
其次,为了降低太阳能电池的反射率,可以在半导体基板的受光面进行称作纹理的微小的凹凸的形成。
其次,如图1、2所示,在半导体基板110的背面(第1主表面),形成具有与半导体基板110相反的导电型即第2导电型的发射领域112、及具有与半导体基板110相同导电型即第1导电型的基极领域113。发射领域112及基极领域113的形成方法并未特别限定,可以采用从前公知的方法。例如,发射领域112可以通过使用BBr3等的气相扩散而形成。此外,基极领域113可以通过使用***的气相扩散而形成。此外,在形成发射领域112及基极领域113时,可以通过使用由氧化硅膜、氮化硅膜等所构成的扩散屏蔽,而形成所期待的形状的发射领域112及基极领域113。例如,如图1所示,形成条纹花样的基极领域113,在形成该基极领域113之处以外形成发射领域112。
其次,在半导体基板110的受光面及背面形成由氮化硅膜、氧化硅膜等所构成的保护膜119。氮化硅膜可以利用CVD法,氧化硅膜利用CVD法或热氧化法来形成。
其次,形成接在发射领域112的射极电极122、与接在基极领域113的基极电极123。在图1所示的背面构造的太阳能电池的场合,在发射领域112与基极领域113上,形成延伸于水平方向的射极电极122与基极电极123。
电极的形成方法并无特别限制,但从生产性的观点而言,则以导电性糊的网版印刷或投放器形成为佳。该场合的射极电极122与基极电极123,通过在把银粉末及玻璃料与有机结合剂混合的银膏、介着保护膜119往发射领域112与基极领域113上涂布并干燥后,于1~30分钟700~880℃左右的温度进行烧成而被形成。利用这热处理让保护膜119被银膏侵蚀,使电极与硅电性地接触。
此外,也可以适用电镀。由于该场合有必要使电极形成处的基板表面露出来,所以将该处的保护膜119以例如激光剥蚀予以去除。
其次,作为防止发射领域112与基极领域113的电性短路的绝缘膜118而形成不含羧基的聚酰亚胺。图1所示的背面构造的太阳能电池的场合,将绝缘膜118、形成在发射领域112与基极汇流条133的交叉处,及基极领域113与射极汇流条132的交叉处。
有关绝缘膜的形成方法并无特别限制,但从生产性的观点而言,则以将绝缘前驱体的糊进行网版印刷或喷墨印刷、或者投放器涂布为佳。此场合,依所用的绝缘前驱体的不同步骤多少不同,但大多在印刷前驱体之后,于70℃至150℃左右的大气中使之干燥1分钟至10分钟左右后进行本硬化。本硬化方法也依绝缘前驱体的不同而异,可以是热硬化型或UV(紫外线)硬化型等。进行本硬化时的热处理条件,例如,可以是设为在200℃至400℃的大气中10秒至15分钟左右的热处理。但是,绝缘膜118是不含羧基的聚酰亚胺。
在此,含羧基的有机物,在TOF-SIMS利用铋离子照射被弹出的2次离子之中,可以检出作为例如m/z值(m:离子质量数、z:离子电荷数)出现在115附近的C6H11O2的峰值。从而,在本发明的方法,也可以将在TOF-SIMS法让Bi5++离子以加速电压30kV,0.2pA照射时的C6H11O2检出计数为100以下即本硬化后的绝缘膜、视为由不含羧基的聚酰亚胺所构成的绝缘膜。又,上述检出计数(100)大致为TOF-SIMS法的检出下限左右。
在绝缘膜残留含羧基的有机物时,耐天候性会显着降低。该理由尚未明确,但认为是伴随绝缘膜的吸湿由酰胺酸而来的羧基引发生成羧酸,作用于电极本身或者电极与硅的边界面而使电性电阻恶化。
如先前所述,酰胺酸溶液,是一种利用热处理脱水·酰亚胺化之物,但依不同的涂布膜厚或热处理条件等,会有一部分酰亚胺化不完全,导致前驱体残留的情形。在这样的场合,通过将例如涂布膜厚与热处理条件最适化,有可能可以回避问题。
然而,最好是使用不含酰胺酸的绝缘膜前驱体。该场合,可以使用例如日本专利公报特开2015-180721号所记载的可溶性聚酰亚胺的可溶性聚酰亚胺涂布剂。
以下,说明可溶性聚酰亚胺。可溶性聚酰亚胺,例如,是一种利用固态聚合法得到的聚酰亚胺粉体,该聚酰亚胺在酰胺系溶媒为可溶性,可以作成依照GPC(凝胶浸透色层分析法)的重量平均分子量为10000以上的聚酰亚胺粉体。
作为酰胺系溶媒的具体例,可列举N-甲基-2-咯烷酮(NMP)、N,N-二甲基甲酰胺(DMF)、N,N-二甲基乙酰胺(DMAc)等。
此外,上述聚酰亚胺粉体,可以通过将四羧酸、或四羧酸二酯、与二胺所构成的盐,溶媒存在对该盐质量为1质量%以上30质量%以下下,进行固相聚合而制造出来。
在此,固相聚合法是于固体状态促进聚合反应的方法。
在此,四羧酸二酯,是所谓四羧酸二甲基酯、四羧酸二乙基酯、四羧酸二异丙基酯等。
作为四羧酸,可以举出环己烷-1,2,4,5-四羧酸(H-PMA)、均苯四甲酸(PMA)、3,3’,4,4’-联苯四羧酸(BPA)、2,2-双(3,4-二羧基苯基)六氟丙烷(6-FA)及所述的二酯等作为最佳例。
作为二胺,可以举出4,4’-二胺二苯基醚(DADE)、2,2-双[4-(4-胺基苯氧基)苯基]丙烷(BAPP)、1,3-双(胺基甲基)环己烷(AMC)、异佛尔酮二胺(IPDA)、2,2-双[4-(4-胺基苯氧基)苯基]六氟丙烷(6F-BAPP)、聚丙二醇双(2-胺基乙基)醚(PGAE)等作为最佳例。
进行固相聚合时所使用的溶媒,可以于固相聚合使所生成的聚酰亚胺粉体溶解的溶媒,具体而言,可以列举酰胺系溶媒、醚系溶媒、水酯系溶媒、酮系溶媒等泛用溶媒,最好是酰胺系溶媒。作为酰胺系溶媒,可以使用上述的NMP、DMF、DMAc等。
其次,参照图3,针对由上述的可溶性聚酰亚胺所构成的绝缘膜、与酰胺酸型的绝缘膜加以说明。
图3是针对4种本硬化后的绝缘膜A、B、C、D,采用TOF-SIMS(ION-TOF公司制TOF-SIMS300)、将Bi5++离子以加速电压30kV进行0.2pA照射的结果所得到的m/z=115附近的质谱。这些之中,样本A是酰胺酸型的聚酰亚胺膜,涂布后以90℃使之干燥5分钟之后,以250℃进行10分钟的热处理使之硬化的样本。在该试料,在m/z=115.08可见到C6H11O2清楚的峰值,可知成为酰亚胺化不完全的膜。相对于此,样本B~D则是分别由组成不同的可溶性聚酰亚胺所形成的聚酰亚胺膜,但在所述试料,并未看到在样本A见到的由于酰胺酸而来的峰值。又,将上述的绝缘膜A、B、C、D的详细显示在下述表1。
[表1]
如表1所示,通过使用可溶性聚酰亚胺涂布剂作为不含酰胺酸的绝缘膜前驱体,可以容易形成不含羧基的聚酰亚胺来作为绝缘膜118。
绝缘膜118形成后,形成射极汇流条132与基极汇流条133。在所述汇流条,可以使用从室温到350℃硬化的热硬化型导电性糊、或UV硬化型导电性糊,将所述以网版印刷或投放器加以涂布形成者佳。如图1所示,可以将射极电极122与基极汇流条133、及基极电极123与射极汇流条132利用绝缘膜118电性绝缘,射极电极122与射极汇流条132、及基极电极123与基极汇流条133电性地导通。
根据上述的本发明方法,可以提供耐久性优良的高效率背面电极型太阳能电池。以上,基板是以N型的场合为例加以说明,但基板为P型的场合也可以适用本发明的方法。亦即,也可以设置N型层作为发射层、P型层作为基极层。
本发明,也可以适用于图4~8所示的太阳能电池。图4图示关于本发明的另一形态太阳能电池的射极贯穿式背电极型太阳能电池400的背面,显示图4中单点虚线A及B的剖面的一部分者为图5(单点虚线A的剖面图)与图6(单点虚线B的剖面图)。又,图5、6是受光面向下。
在该形态,基板110背面的大部分是由基极领域113与被形成在该基极领域113上的基极电极123所占,发射领域112于绝缘膜118所挟的领域被岛状地形成。另一方面,受光面是发射领域112占据,经由被开在基板110的通孔而通到背面的发射领域112。此外,射极电极122也在受光面与背面经由通孔而被连接。在受光面上形成保护膜119。此外,在基板110背面的基极电极123上直线状地形成基极汇流条133。此外,在基板110背面的发射领域112及射极电极122上直线状地形成射极汇流条132。但是,如图6所示,在射极汇流条132与基极电极123交叉的领域,基极电极123由绝缘膜118所覆盖。
图7图示关于本发明的再另一形态的太阳能电池700的背面,图8是图7的单点虚线A的剖面的一部分的剖面图。在此形态,基板110背面的基极领域113形成被发射领域112包围,基极电极123与基极领域113接触、且在与发射领域112重叠的部分挟着保护膜119与绝缘膜118而被绝缘。又,由于保护膜119一般而言多为保护效果与绝缘性能不两立的场合,而以使用绝缘体来确实地绝缘者为佳。又,在图7省略保护膜119。此外,在基板110背面的外周部,形成与多个射极电极122连结的射极汇流条132、与多个基极电极123连结的基极汇流条133。
此外,在图7把基极领域113描写如在基极电极123下直线状地形成,但并非特别限定于此,也可以将基极领域113点状地形成、将此直线状地排列。该场合,基极电极123,被形成与发射领域112以绝缘膜118绝缘、连接基极领域113。
太阳能电池模块
本发明的太阳能电池模块,其特征在于将上述本发明的太阳能电池电性地连接而成的太阳能电池模块。例如,通过将上述方式得到的多个太阳能电池电性地串联连接,可以得到太阳能电池模块。将太阳能电池模块916的一例显示于图9。太阳能电池的正电极923利用耳片912而电性地被连接在邻接的太阳能电池的负电极922,让指定输出所必要的枚数的太阳能电池(太阳能电池胞)900连结起来。被连接的太阳能电池900,未图示出来,但利用覆盖玻璃与充填剂、进而背板而被密封。在覆盖玻璃广为使用钠钙玻璃。此外,在充填剂使用乙烯醋酸乙烯酯或聚烯烃或者聚硅氧等。在背板一般上用使用聚对苯二甲酸乙二醇酯的机能性薄膜。又,一个太阳能电池的正电极923连接在太阳能电池模块916的正极端子913,另一个太阳能电池的负电极922则连接在太阳能电池模块916的负极端子914。
太阳能电池发电***
本发明的太阳能电池发电***,其特征在于将上述本发明的太阳能电池模块多个连接而成的阳能电池发电***。图10是显示链接本发明的模块的太阳光电发电***的基本构成。如图10所示,多个太阳能电池模块1016用配线1015串联地被连结,经由反相器1017而对外部负载电路1018供给发电电力。同图未显示,但该***可以进而具备储蓄已发电的电力的2次电池。
实施例
以下,显示实施例及比较例更具体地说明本发明,但本发明并不以下述实施例为限。
(实施例1)
采用本发明的方法,进行图1、2所示的太阳能电池的制作。
在150mm见方、厚度200μm及比电阻1Ω·cm的磷掺杂<100>n型原切割硅基板,如图1,在基板的背面形成发射领域与基极领域。
将该基板于900℃的氧氛围下进行10分钟热处哩,在基板的双面形成氧化硅膜。然后,在基板双面,进而利用等离子CVD,形成膜厚90nm的氮化硅膜。
之后,在上述发射领域与基极领域,利用网版印刷涂布银膏,进行800℃、3秒钟的热处理使银膏硬化,形成射极电极与基极电极。
其次,利用网版印刷,将图3的绝缘膜B往发射领域的一部分与基极电极的一部分形成。又,绝缘膜B的形成条件等,如上述表1所示。
接着,为了形成射极汇流条与基极汇流条,以网版印刷涂布热硬化型银膏,用200℃进行5分钟热处理使之硬化而得到太阳能电池胞。
在上述太阳能电池的汇流条焊接导线,用白板玻璃、聚硅氧树脂及背板密封,制作出单胞模块。
使用氙气灯光源式的模拟太阳光来测定制作出的单胞模块的初期输出特性之后,在85℃、相对湿度85%的恒温恒湿槽保管2000小时,之后再度进行上述测定。
(实施例2)
在使用与实施例1同样的基板的同样的太阳能电池制造步骤,作为往发射领域的一部分与基极电极的一部分形成的绝缘膜适用图3的绝缘膜C来制作太阳能电池。又,绝缘膜C的形成条件等,如上述表1所示。
之后,与实施例1同样地制作单胞模块。
使用氙气灯光源式的模拟太阳光来测定制作出的单胞模块的初期输出特性之后,在85℃、相对湿度85%的恒温恒湿槽保管2000小时,之后再度进行上述测定。
(比较例1)
在使用与实施例1同样的基板的同样的太阳能电池制造步骤,作为往发射领域的一部分与基极电极的一部分形成的绝缘膜适用图3的绝缘膜A来制作太阳能电池。又,绝缘膜A的形成条件等,如上述表1所示。
之后,与实施例1同样地制作单胞模块。
使用氙气灯光源式的模拟太阳光来测定制作出的单胞模块的初期输出特性之后,在85℃、相对湿度85%的恒温恒湿槽保管2000小时,之后再度进行上述测定。
在表2显示上述实施例1、2及比较例1的太阳能电池初期特性、与高温高湿试验2000小时经过后的特性降低率。
[表2]
如表2所示,实施例1及实施例2(作为绝缘膜而形成不含羧基的聚酰亚胺之例)的初期特性虽然都与比较例1(作为绝缘膜而形成含羧基的聚酰亚胺之例)同程度,但耐久性大幅地被改善。结果,根据本发明,显示可以不必附加步骤而实现高效率、高耐天候性的太阳能电池。
又,本发明并不以上述实施形态为限。上述实施形态为例示,与本发明的申请专利范围所记载的技术思想具有实质上相同的构成,可以发挥同样的作用效果者,均被包含于本发明的技术范围。
Claims (15)
1.一种太阳能电池,其特征在于,
具备:备有具有第1导电型的半导体基板、且在该半导体基板的第1主表面、有与前述第1导电型相反的导电型亦即第2导电型的发射领域,接在前述发射领域的射极电极,具有前述第1导电型的基极领域,接在前述基极领域的基极电极,与防止前述发射领域与前述基极领域的电性短路的绝缘膜的太阳能电池,前述绝缘膜是由使用不含酰胺酸的绝缘膜前驱体而形成的不含羧基的聚酰亚胺所构成;前述绝缘膜在TOF-SIMS(飞行式二次离子质谱)法将Bi5++离子以加速电压30kV,0.2pA的条件照射时的C6H11O2检出计数为100以下,
前述太阳能电池,与制作初期的电气特性相比,在85℃、相对湿度85%的环境保管2000小时之后,电气特性的降低率为0.5%以下。
2.根据权利要求1所述的太阳能电池,其中,
前述绝缘膜被形成为前述发射领域与前述基极电极电性绝缘。
3.根据权利要求1所述的太阳能电池,其中,
前述绝缘膜被形成为前述基极领域与前述射极电极电性绝缘。
4.根据权利要求2所述的太阳能电池,其中,
前述绝缘膜被形成为前述基极领域与前述射极电极电性绝缘。
5.根据权利要求1所述的太阳能电池,其中,
前述绝缘膜被形成为前述射极电极与前述基极电极电性绝缘。
6.根据权利要求2所述的太阳能电池,其中,
前述绝缘膜被形成为前述射极电极与前述基极电极电性绝缘。
7.根据权利要求3所述的太阳能电池,其中,
前述绝缘膜被形成为前述射极电极与前述基极电极电性绝缘。
8.根据权利要求4所述的太阳能电池,其中,
前述绝缘膜被形成为前述射极电极与前述基极电极电性绝缘。
9.根据权利要求1至8中任一项所述的太阳能电池,其中,
前述半导体基板是结晶硅基板。
10.一种太阳能电池模块,其特征在于,
将权利要求1至8中任一项所述的太阳能电池电性地连接而成的太阳能电池模块。
11.一种太阳能电池模块,其特征在于,
将权利要求9所述的太阳能电池电性地连接而成的太阳能电池模块。
12.一种太阳能电池发电***,其特征在于,
将权利要求10所述的太阳能电池模块多个连接而成的太阳能电池发电***。
13.一种太阳能电池发电***,其特征在于,
将权利要求11所述的太阳能电池模块多个连接而成的太阳能电池发电***。
14.一种太阳能电池的制造方法,其特征在于,
具有:在具有第1导电型的半导体基板的第1主表面,形成具有与前述第1导电型相反的导电型即第2导电型的发射领域、与形成具有前述第1导电型的基极领域的步骤;形成接在前述发射领域的射极电极、与接在前述基极领域的基极电极的步骤;使用不含酰胺酸的绝缘膜前驱体,作为防止前述发射领域与前述基极领域的电性短路的绝缘膜而形成不含羧基的聚酰亚胺的步骤,
其中,前述绝缘膜在TOF-SIMS(飞行式二次离子质谱)法将Bi5++离子以加速电压30kV,0.2pA的条件照射时的C6H11O2检出计数为100以下,
前述太阳能电池,与制作初期的电气特性相比,在85℃、相对湿度85%的环境保管2000小时之后,电气特性的降低率为0.5%以下。
15.根据权利要求14所述的太阳能电池的制造方法,其中,
作为前述半导体基板而使用结晶硅基板。
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