CN110073481A - The method for being used to support the substrate carrier of substrate, mask chucking device, vacuum flush system and operation substrate carrier - Google Patents
The method for being used to support the substrate carrier of substrate, mask chucking device, vacuum flush system and operation substrate carrier Download PDFInfo
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- CN110073481A CN110073481A CN201780051374.8A CN201780051374A CN110073481A CN 110073481 A CN110073481 A CN 110073481A CN 201780051374 A CN201780051374 A CN 201780051374A CN 110073481 A CN110073481 A CN 110073481A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
This disclosure provides according to a kind of a kind of a kind of a kind of for the substrate carrier of supporting substrate, mask chucking device, vacuum flush system and method for operating electrical permanent-magnet element in vacuum chamber of independent claims.According to one aspect of the present disclosure, a kind of substrate carrier for the supporting substrate in vacuum chamber is provided.The substrate carrier includes electrical permanent-magnet element, wherein the electrical permanent-magnet element is configurable for applying magnetic retentivity to mask.According to another aspect of the present disclosure, a kind of vacuum flush system is provided.The vacuum flush system includes being vacuum-treated chamber, described at least one substrate carrier or mask chucking device for being vacuum-treated the other aspects that chamber has according to present disclosure.According to another aspect of the present disclosure, a kind of method for operating electrical permanent-magnet element in the system for including electrical permanent-magnet element is provided.The described method includes: providing mask carrier on the surface of the substrate supported by the substrate carrier；The electrical permanent-magnet element is switched to magnetized state from unmagnetized state by the electric current by applying electromagnet；And remove the electric current.
Description
Technical field
The embodiment of present disclosure is related to for mask to be fixed and supported to the device and method on substrate carrier.
Particularly, the embodiment of present disclosure be related in there is the processing system for being vacuum-treated chamber by mask it is fixed and
The device and method being supported on substrate carrier are especially manufactured for OLED.
Background technique
Due to many reasons, the photoelectric device using organic material (such as Organic Light Emitting Diode (OLED)) becomes more next
It is more universal.OLED is a kind of light emitting diode of specific type, and wherein luminescent layer includes the film of certain organic compounds.It is organic
Light emitting diode (OLED) for manufacturing television screen, computer monitor, mobile phone, other hand-held devices etc., with
In display information.OLED can be used for General Spatial illumination.The achievable color of OLED display, brightness and angular field of view are big
In the achievable color of traditional LCD displays, brightness and angular field of view, because OLED pixel directly shines without regard to back
Light.Therefore, the energy consumption of OLED display is far below the energy consumption of traditional LCD displays.In addition, OLED can be manufactured on flexible substrates
The fact generate further application.
The functionality of OLED depends on the coating layer thickness of organic material.The thickness must be within a predetermined range.OLED's
In production, in order to realize high-resolution OLED device, about evaporation material deposition there are technological challenges.In particular, accurately
Smoothly the onboard body of transport matrix and mask are still challenging by processing system.In addition, accurately mask is fixed and is propped up
It supports on substrate carrier to realize that the processing result of high quality is still challenging, for example, for producing high-resolution OLED device
Part.
Therefore, offer is continuously needed for mask to be fixed and supported to the improved device and method on substrate carrier.
Summary of the invention
In view of above-mentioned, provide according to a kind of for the supporting substrate in vacuum chamber and mask of independent claims
Substrate carrier, a kind of vacuum flush system and a kind of method for operation substrate carrier.Another aspect, the benefit of present disclosure
Place and feature are apparent from claims, specification and annexed drawings.
According to one aspect of the present disclosure, a kind of base for the supporting substrate in vacuum chamber and mask is provided
Onboard body.The substrate carrier includes electrical permanent-magnet element, wherein the electrical permanent-magnet element is configurable for covering to described
Mould applies magnetic retentivity.
According to another aspect of the present disclosure, a kind of vacuum flush system is provided.The vacuum flush system includes
It is vacuum-treated chamber, described at least one substrate carrier for being vacuum-treated the other aspects that chamber has according to present disclosure.
According to another aspect of the present disclosure, a kind of substrate load for operating supporting substrate and mask carrier is provided
The method of body, the substrate carrier include electrical permanent-magnet element.The described method includes: described in supported as the substrate carrier
Mask carrier is provided on the surface of substrate；Electric current by applying electromagnet cuts the electrical permanent-magnet element from unmagnetized state
Change to magnetized state；And remove the electric current.
Embodiment is also directed to the equipment for carrying out disclosed method and including the method for executing each description
The equipment part of aspect.In terms of these methods can by hardware component, by software programming appropriate computer, both
Any combination executes in any other way.In addition, according to the embodiment of the present disclosure also directed to for operating description
Equipment method.In terms of the method for equipment for operating description includes the method for carrying out each function of equipment.
Detailed description of the invention
In order to which the features described above of present disclosure is understood in detail, the present disclosure summarized briefly above is more
Specific description can be obtained by reference to embodiment.Annexed drawings are related to the embodiment of present disclosure, and describe
Under:
Fig. 1 a shows the schematic side elevation of the substrate carrier according to embodiment as described herein；
Fig. 1 b shows the schematic side elevation of the substrate carrier according to further embodiments as described herein；
Fig. 2 a shows the schematic side elevational of the electrical permanent-magnet component according to the substrate carrier of embodiment as described herein
Figure；
Fig. 2 b shows the schematic side elevational of the electrical permanent-magnet component according to the substrate carrier of embodiment as described herein
Figure；
Fig. 3 shows the schematic side elevational of the electrical permanent-magnet component according to the substrate carrier of embodiment as described herein
Figure；
Fig. 4 shows the schematic side elevation of the vacuum flush system according to embodiment as described herein；With
Fig. 5 shows the method shown for operation substrate carrier and mask carrier according to embodiment as described herein
Flow chart.
Specific embodiment
With detailed reference to various embodiments, one or more examples of these embodiments are shown in each attached drawing
Out.Each example is provided in a manner of explaining, and is not intended to limit.In addition, being illustrated or described as an embodiment
The feature of part can be used for any other embodiment or in conjunction with any other embodiment, it is further real to generate
Apply mode.This specification is intended to include such modifications and variations.
In the description below to attached drawing, similar elements symbol indicates same parts.Generally, it only describes relative to each reality
Apply the difference of mode.Unless otherwise specified, otherwise the description of the part in an embodiment or aspect be equally applicable to it is another
Corresponding part or aspect in a embodiment.
Before the various embodiments of present disclosure are more fully described, explain about some terms used herein
With some aspects of expression.
Fig. 1 a and Fig. 1 b show the schematic side elevation of the substrate carrier 100 according to embodiment as described herein.It is special
Not, according to the embodiment that can be combined with any other embodiment as described herein, substrate carrier 100 is configurable for
Supporting substrate 101 and mask 401 in vacuum chamber, including electrical permanent-magnet element 200.Electrical permanent-magnet element 200 is configured as
For applying magnetic retentivity to mask 401.Electrical permanent-magnet element 200 is shown at unmagnetized state in fig 1 a, wherein
There is no magnetic retentivity to be applied to mask 401, and be shown at magnetized state in Figure 1b, wherein magnetic retentivity is applied
It is added to mask 401.
In this disclosure, " substrate carrier " is interpreted as being configurable for keeping substrate, spy as described herein
It is not the carrier of large-area substrates.Typically, the substrate for being kept or being supported by substrate carrier includes front surface and rear surface, wherein
Front surface is the surface of processed substrate, such as is deposited with material layer on it
Term " substrate " as used herein should particularly cover non-flexible substrate, for example, glass plate and metal plate.So
And present disclosure is without being limited thereto, and term " substrate " can also cover flexible base board, such as coiled material (web) or foil.Term
" substantially non-flexible " is interpreted as mutually distinguishing with " flexibility ".Particularly, substantially inflexible substrate can have certain journey
The flexibility of degree, such as the glass plate of the thickness with 0.9mm or smaller (such as 0.5mm or smaller), wherein comparing flexible base board
For, the flexibility of substantially inflexible substrate is small.According to implementations described herein, substrate can be sunk by being suitable for material
Long-pending any material is made.For example, substrate can be made of the material selecting from the group being made of following item: glass (for example,
Calcium soda-lime glass, Pyrex etc.), metal, polymer, ceramics, combination materials, carbon fibre material or can by depositing operation by
The combination of any other material or material of coating
According to some embodiments, substrate can be " large-area substrates " and be displayed for device manufacture.For example, " big
It is 0.5m that area glass substrate ", which can have area,2Or bigger, particularly 1m2Or bigger main surface.In some embodiments, greatly
Area glass substrate can be for the 4.5th generation, and (it corresponds to about 0.67m2Substrate (0.73m × 0.92m)), the 5th generation (its correspond to about
1.4m2Substrate (1.1m × 1.3m)), the 7.5th generation (its correspond to about 4.29m2Substrate (1.95m × 2.2m)), in the 8.5th generation, (its was right
Ying Yuyue 5.7m2Substrate (2.2m × 2.5m)) or even the 10th generation (its correspond to about 8.7m2Substrate (2.85m × 3.05m)).
Even higher generation (such as the 11st generation and the 12nd generation) and corresponding substrate area can be similarly effected.
Electrical permanent-magnet element 200 is configurable for applying magnetic retentivity to mask 401.Act on the magnetic on mask 401
Retentivity causes mask 401 to be pulled to the surface of substrate 101, and mask 401 and the surface of substrate 101 are contacted, and such as schemes
Shown in 1b.Magnetic retentivity can be sufficient to make mask 401 to be maintained at fixed position relative to substrate 101.Mask 401 is kept
Allow to improve the quality for depositing layer on the substrate 101 during processing in fixed position because it is any during processing stage,
Any movement of mask 401 is all suppressed between processing stage or during the transport of substrate carrier 100.
According to embodiment as described herein, it can provide on large area substrates and utilize pattern mask (such as fine gold
Belong to mask (fine metal mask, FMM)) material deposition.Therefore, the size for the region of deposition materials is such as 1m2Or
More than.In addition, pattern mask (for example, the pixel for display generates) provides the pattern of micron range.Pattern mask is opened
The alignment tolerance in micron range of mouth may be challenging over a large area.For being vertically oriented or being oriented substantially vertically
Substrate for it is especially true.The gravity even acted in the corresponding frame of pattern mask and/or pattern mask may also drop
The positioning accuracy of low pattern mask.Therefore, for pattern mask to be clamped to the improved chucking device of substrate for vertical (base
It is vertical in sheet) processing substrate it is particularly advantageous.
Substrate carrier 100 is configured in supporting substrate 101 and mask 401 in vacuum chamber.Vacuum chamber can be with
It is any closed chamber, wherein the inside of vacuum chamber is maintained at the pressure of the environmental pressure outside lower than vacuum chamber.Vacuum
Chamber can be processing chamber housing, and wherein substrate 101 is processed.Such processing operation may include depositing a material to substrate
On 101 surface, the material layer of etching substrate 101, apply heat or cooling substrate 101 to substrate 101.Vacuum chamber can replace
Generation ground is transport chamber or transfer chamber, and wherein substrate 101 transports or be transmitted to another vacuum chamber from a vacuum chamber.
Vacuum chamber can be alternatively load locking cavity, in a vacuum chamber being maintained under some pressure and can keep
Substrate 101 is transmitted between another vacuum chamber at various pressures.
Substrate carrier 100 is configurable for support mask 401.Mask 401 is arranged on a surface of the substrate 101.Mask
401 may include multiple holes, these holes limit mask pattern, for selective deposition material on a surface of the substrate 101
Material.
Mask 401 may include allowing to provide multiple holes to limit any structure of mask pattern.For example, mask 401
It may include flat-panel component, flat-panel component has through etch process or processing technology in the hole wherein formed.Mask 401 can
To be fine metal mask (FMM).
Mask 401 may include at least one element, at least one described element include magnetism can attractive material, such as gold
Belong to, to allow that magnetic retentivity is applied to mask 401 by electrical permanent-magnet element 200, this, which has, is maintained at substrate for mask 401
The effect of fixation position on 101 surface.The structural detail of mask 401 can all include that magnetism attractive material or can only be covered
Some structural details of mould 401 may include that magnetism can attractive material.
Mask 401 can be edge exclusion mask or shadow mask (shadow mask).Edge exclusion mask is to match as follows
The mask set: for one or more fringe regions of masking substrate, so that not having material deposition during the coating of substrate 101
On one or more fringe regions.Shadow mask is the mask configured as follows: for sheltering deposition on the substrate 101 more
A feature.For example, shadow mask may include multiple small openings, such as the grid (grid) of small opening.For example, multiple small openings
It can correspond to the pixel of display.
Mask 401 may be mounted on mask carrier 400.In this disclosure, " mask carrier " is interpreted as being matched
It is set to the carrier for keeping mask.Mask 401 may include the lamella elements with multiple holes, and the multiple hole limits
Mask pattern for selective deposition.In this way, mask 401 may have insufficient rigidity effectively to install mask 401
It is effectively removed from substrate carrier 100 to substrate carrier 100 and by mask 401.Mask carrier 400 (including mask carrier frame
Frame 402) it can be surround at the circumferential edges of mask 401 and keep mask 401, and enough rigidity can be provided, to permit
Perhaps mask 401 is installed to substrate carrier 100 and removes mask 401 from substrate carrier 100.Mask carrier 400 may include magnetic
Property can attractive material, such as metal, so that mask carrier 400 can also be kept by the magnetic generated by electrical permanent-magnet element 200
Power is attracted towards substrate 304.
Electrical permanent-magnet element 200 and electrostatic chuck 300 are desirably integrated into the common carrier main body of substrate carrier 100.Example
Such as, electrostatic chuck 300 can be embedded in the first internal volume of carrier element, and electrical permanent-magnet element 200 can be embedded in
In second internal volume of carrier element.Alternately or in addition, electrostatic chuck 300 and electrical permanent-magnet element 200 can be secured
Ground is connected to identical carrier element, for example, by the way that electrostatic chuck 300 and electrical permanent-magnet element 200 to be attached or fixed to together
One carrier is transported and is moved so that electrostatic chuck 300 and electrical permanent-magnet element 200 can be used as individual unit.For example, carrying
Body can be formed as Integral plate type structure, wherein being disposed with both electrostatic chuck 300 and electrical permanent-magnet element 200.As another
A example, electrostatic chuck 300 and electrical permanent-magnet element 200 can be integrated with each other.
Electrostatic chuck 300 can be arranged between electrical permanent-magnet element 200 and substrate 101, as exemplary in Fig. 1 a and 1b
Shown in ground.Alternatively, electrical permanent-magnet element 200 can be arranged between electrostatic chuck 300 and substrate 101.
Fig. 1 a and 1b schematically illustrate the electrical permanent-magnet element 200 as a part of substrate carrier 100.According to can
The other embodiment combined with other embodiment as described herein, electrical permanent-magnet element 200 can be and substrate carrier
The individually unit being disposed adjacent, for example, the position that mask is pulled to substrate is arranged in.It can be provided in the mask in vacuum chamber
Chucking device.Equipment includes electrical permanent-magnet element, electrical permanent-magnet element have the first permanent magnet, at least the second permanent magnet and
Magnet assembly is controlled, control magnet assembly has at least one control magnet and the electromagnetism adjacent at least one control magnet
Body.
Some position in vacuum chamber can be set in mask chucking device, so that mask is attracted on substrate carrier
Substrate on.The electricity described relative to the other examples of the electrical permanent-magnet element 200 with a part as substrate carrier
Feature, details and the aspect of permanent magnet elements 200 can by accordingly with.
Substrate carrier 100 can be configured as with non-horizontal orientation supporting substrate 101 and mask 401, especially with
Substantially vertical orientation." substantially vertical orientation " can be regarded as being orientated as follows as used herein, wherein substrate carrier
Angle between 100 main surface and gravitational vectors is between+10 ° and -10 °, especially between 5 ° and -5 °.In some realities
It applies in mode, it is (strictly) vertical that the orientation of substrate carrier 100 can not be during transportation and/or during deposition, and
It is to be slightly slanted relative to vertical axis, for example, with the inclination angle between 0 ° and -5 °, especially with inclining between -1 ° and -5 °
Oblique angle inclination.Negative angle refers to the following orientation of substrate carrier 100, and wherein substrate carrier 100 is downwardly inclined, that is, to be processed
Substrate surface is downwards.It from the deviation of the gravitational vectors of the orientation of mask 401 and substrate 101 may be beneficial during deposition
, and it can produce more stable deposition processes, or orientation downwards can be adapted to reduce during deposition on substrate
Particle.However, during transportation and/or during deposition, mask set is also possible to strictly be vertically oriented (+/- 1 °).
During transportation and/or the larger angle during deposition between gravitational vectors and substrate carrier 100 is also possible
's.0 ° and it is 30 ° +/- between angle can be regarded as used herein " non-horizontal orientation ".The transport matrix in non-horizontal orientation
Onboard body 100 can save space and allow smaller vacuum chamber.
Substrate carrier 100 can also include source element 104, and source element 104 is configurable for electrical permanent-magnet member
Part 200 provides electric power.Source element 104 can be the external power supply for not being attached or being integrated into substrate carrier 100.Alternatively, electric
Source element 104 can be attached or be integrated into substrate carrier 100.Source element 104 can produce one or more electric pulses,
For example, one or more current impulses, one or more of current impulses may be adapted to magnetizing electrical permanent-magnet element 200
Switch between state and unmagnetized state, as being illustratively described in more detail about Fig. 2 a and 2b.For example, 10 can be provided
A or more pulse.Quantity depending on pulse, thus it is possible to vary and/or adjust the magnetization of at least one control magnet 204.Magnetic
Change magnetic retentivity of the influence on mask.
According to the other embodiment that can be combined with other embodiment as described herein, in substrate and/or can cover
Magnetic force is adjusted to zero in the plane of mould.The magnetic force of various elements is cancelled out each other or magnetic flux line is routed away from substrate or mask.
In the case where source element 104 is located at 100 outside of substrate carrier, due to the bistability of electrical permanent-magnet element
Matter, this can have the advantages of capable of only powering at the specified point in vacuum flush system to electrical permanent-magnet element 200.Example
Such as, source element 104 can be set at the mask installation station in vacuum flush system, allow to only at mask installation station
Electric power is provided to electrical permanent-magnet element 200 by source element 104.Therefore, when substrate carrier 100 is in entire vacuum flush system
In when being transported, there is no breaking down, wherein electrical permanent-magnet element 200 is unintentionally switched to unmagnetized shape
State, so that mask 401 stays in the non-fixed position in undesired location.
According to the embodiment that can be combined with any other embodiment as described herein, substrate carrier 100 further includes quiet
Electric sucker 300, electrostatic chuck 300 include substrate 304.Electrostatic chuck 300 includes insulating layer 301,303 and electrode layer
302.The surface 303 of insulating layer 301 can form substrate 304.
Electrostatic chuck 300 (herein also referred to as " e sucker ") can be used for that substrate 101 is attracted to base during substrate processing
The substrate 304 of onboard body 100.For example, substrate 101 may include following material, such as dielectric material, the dielectric
Material can be pulled to substrate 304 by electrostatic force, substrate 101 is pulled with straight with substrate 304
Contact.During high-temperature technology, coating processes and plasma process, substrate 101 can also be realized in vacuum environment
It keeps.
Electrostatic chuck 300 includes insulating layer 301,303.Insulating layer 301,303 can be made of dielectric material, such as high lead
Hot dielectric material, such as pyrolytic boron nitride, aluminium nitride, silicon nitride, aluminium oxide or equivalent material, such as heat resistant polymer base
Material, such as polyimide-based material or other organic materials.The electrode of electrostatic chuck can be connected respectively to power supply, such as electricity
Potential source, to apply predetermined voltage to electrode to generate predetermined electrostatic grip.
Electrostatic chuck 300 includes electrode layer 302, and electrode layer 302 includes multiple electrodes.The multiple electrode may be coupled to
Source element 105, such as voltage source, source element 105 can apply predetermined voltage at substrate 304 to electrode
Predetermined electrostatic charge is generated, the electrostatic charge can be adjustable.
Substrate carrier 100 can also include substrate 304.Substrate 304 can be electrostatic chuck 300
Surface, or can be the surface for another element being arranged on electrostatic chuck 300.Particularly, substrate 304 can
To be one surface in insulating layer 301,303.Substrate 304 is configurable for supporting substrate 101, and wraps
Include the surface of the supporting substrate 101 in the whole surface of substrate 101.Substrate 304 can have the face with substrate 101
The identical or bigger area of product.
Substrate 304 can statically be charged by electrostatic chuck 300.To substrate 304 into
Statically charging has the effect of substrate 101 being attracted to substrate 304 row, so that substrate 101 is statically clamped
To substrate carrier 100.
Substrate 304 can be flat surfaces, so that the branch support group over its entire area of substrate 304
Plate 101.Alternatively, substrate 304 can have non-planar surface.Particularly, substrate 304 can have forming
For meet substrate 101 shape surface.
Substrate carrier 100 can also include being configurable for providing the source element 105 of electric power to electrostatic chuck 300.
Source element 105 cannot not can be attachedly or be integrated into the external power supply in substrate carrier 100.Alternatively, source element 105 can be with
It is attached or is integrated into substrate carrier 100.Source element 105 can produce electric pulse, such as current impulse, and the electric pulse can
It is suitable for switching electrical permanent-magnet element 200 between magnetized state and unmagnetized state.
Source element 105 can be element identical with source element 104, provide electric power to electrical permanent-magnet element 200,
So that single source element individually and independently provides electric power to electrical permanent-magnet element 200 and electrostatic chuck 300.Such list
A integrating power supply element is desirably integrated into substrate carrier 100, or can be located at outside substrate carrier 100.
Electrostatic chuck 300 can be configured as monopole sucker, bipolar sucker or multipole sucker." monopole sucker " can be regarded as
Electrostatic chuck including may be connected to one or more electrodes of power supply (for example, high-voltage power supply).Source element 104 be configured as to
The voltage of multiple electrodes offer monopole.For example, positive voltage can be applied to the multiple electrodes of electrostatic chuck 300, so that in base
Induct in the substrate 304 of onboard body 100 negative electrical charge.Alternatively, negative voltage can be applied to multiple electrodes, so that
Induct in the substrate 304 of substrate carrier 100 positive charge.
" bipolar Suction cup assembly " can be regarded as including that may be connected to power supply (for example, high-voltage power supply) at least as used herein
The electrostatic chuck of one first electrode and at least one second electrode.Source element 104 is configured as providing the to first electrode
One polar voltage, and the second polar voltage is provided to second electrode.For example, negative voltage can be applied to the first electricity
Pole, and positive voltage can be applied to second electrode, vice versa.Therefore, table can be supported in substrate by electrostatic induction
Corresponding negatively charged region and corresponding positively charged region are generated at face 304.
In multipole Suction cup assembly, multiple electrodes can be provided, these electrodes can be can independent control.
Electrostatic chuck 300 may include at least one first electrode and at least one second electrode, wherein via power supply member
Positive voltage (+) is applied to first electrode and negative voltage (-) is applied to second electrode by part 104 (for example, high-voltage power supply).At least
One first electrode can interlock at least one second electrode, to increase the grasp force provided by electrostatic chuck 300.Substitution
Ground or additionally, can be alternately arranged first electrode and second electrode.For example, electrostatic chuck 300 may include multiple wiring,
These wiring are positively charged and negatively charged in an alternating manner.
According to the embodiment that can be combined with any other embodiment as described herein, electrical permanent-magnet element 200 passes through
Applying electric current is changeable between magnetized state and unmagnetized state.It is used for for example, source element 104 can be provided to electricity
Permanent magnet elements 200 provide electric current.Applying electric current causes the magnetic field of electrical permanent-magnet element 200 to be reconfigured, and then change is applied
It is added to the magnetic force of mask carrier 400.
As Fig. 2 a and 2b are exemplarily illustrated, according to the implementation that can be combined with any other embodiment as described herein
Mode, electrical permanent-magnet element 200 includes the first permanent magnet 201, at least the second permanent magnet 202, and controls magnet assembly, described
Controlling magnet assembly has at least one control magnet 204 and the electromagnet 205 adjacent at least one control magnet 204.Such as
Electrical permanent-magnet element 200 shown in Fig. 2 a is in unmagnetized state, and electrical permanent-magnet element 200 as shown in Figure 2 b is in magnetization
Mask 401 is precisely fixed on substrate 101 by state so that magnetic force is applied to mask 401 by electrical permanent-magnet element 200
Appropriate location.
Electrical permanent-magnet element 200 includes the first permanent magnet 201 with the first polarity 201a and the second polarity 201b, and
At least the second permanent magnet 202 with the first polarity 202a and the second polarity 202b.First permanent magnet 201 and at least the second permanent magnetism
Body 202 is arranged such that their adjacent polarity is identical.For example, the electrical permanent-magnet member being exemplarily illustrated in Fig. 2 a and 2b
In part 200, the second adjacent polarity 201b, 202b of the first permanent magnet 201 and at least the second permanent magnet 202 can be matched respectively
It is set to the arctic.
First permanent magnet 201 and at least the second permanent magnet 202 can be referred to as " clamp magnet ", so that the first permanent magnet
201 and at least second permanent magnet 202 formed " clamp magnet component ".The clamp magnet component of electrical permanent-magnet element 200 is configured
Mask 401 " clamping " is arrived substrate 101 in some sense by magnetic field needed for magnetic retentivity is applied to mask 401 at generation.
Control magnet assembly includes at least one control magnet 204, has the first polarity 204a and the second polarity 204b.
At least one control magnet 204 can produce the magnetic field for being enough to control the state of electrical permanent-magnet element 200.When at least one control
When magnet 204 is polarized with the first polarization, electrical permanent-magnet element 200 is matched by the magnetic field 204 that at least one control magnet generates
It is set in unmagnetized state, as illustrated in Fig. 2 a.By switch at least one control magnet 204 first and the
Two polarity 204a, 204b are polarized at least one control magnet 204 with the second polarization, control magnet 204 by least one
The magnetic field of generation constitutes electrical permanent-magnet element 200 and is in magnetized state, so that magnetic retentivity is applied to mask 401, in Fig. 2 b
It illustrates.
Electromagnet 205 can be located near control magnet 204.Electromagnet 205 can at least one substantially closed control
Magnet 204.Electromagnet 205 is configured to switch the polarity of at least one control magnet 204.Electromagnet 205 may include at least one
A coil or at least one conductive line winding group.Electric current is induced at least one coil of electromagnet 205, in electromagnet 205
Interior generation magnetic field, such as reversing magnetic field.When the reversing magnetic field in electromagnet 205 is more than the intrinsic of at least one control magnet 204
Coercivity (intrinsic coercivity) is anti-when removing magnetic (resistance to being demagnetized), institute
Stating reversing magnetic field makes the polarity of at least one control magnet 204 from the first polarity switching to the second polarity.
Applying the first electric current makes electrical permanent-magnet element 200 be switched to magnetized state from unmagnetized state, and applies and the
The second different electric current of one electric current makes electrical permanent-magnet element 200 be switched to unmagnetized state from magnetized state.It can be along forward direction
Apply the first electric current, and the second electric current can be applied in opposite direction.
Electric current for switching electrical permanent-magnet element 200 between unmagnetized state and magnetized state can be provided,
Middle offer 1kW or bigger power, such as 8kW or bigger.Electric current can apply the duration less than 3 seconds, especially less than 1
Second, more particularly between 0.3 second and 1 second.
According to the embodiment that can be combined with any other embodiment as described herein, electrical permanent-magnet element 200 is matched
Magnetized state or the unmagnetized state of being maintained at are set to after removing electric current.To electrical permanent-magnet element 200 apply electric current and with
It moves back except after electric current, the configuration in the magnetic field generated by electrical permanent-magnet element 200 keeps stablizing.Therefore, electrical permanent-magnet element 200
Bistable state is showed, there is stable unmagnetized state and stable magnetized state.Electrical permanent-magnet element 200 is configured to bistable
State permission remains fixed to substrate carrier 100 the mask carrier 400 under non-power supply state, enables substrate carrier 100
It is enough that mask carrier 400 is precisely fixed to appropriate location.
At least two permanent magnets 201,202 and at least one control magnet 204 include specific magnetic alloy to obtain
The magnetism needed.The material of first permanent magnet 201 and at least the second permanent magnet 202 is suitable for generating highfield effectively by mask
401 are secured in place.Additionally or alternatively, the intrinsic coercivity of the first permanent magnet 201 and at least the second permanent magnet 202
Higher than the magnetic field generated by least one control magnet 204.At least one control magnet 204 does not generate high-intensity magnetic field to switch at least
The polarity of two permanent magnets 201,202.In the sense that, at least two permanent magnets 201,202 can be referred to as " hard " magnet,
And at least one control magnet 204 can be referred to as " soft " magnet.
According to the embodiment that can be combined with any other embodiment as described herein, electrical permanent-magnet element 200 is also wrapped
At least one core component 203 being arranged between the first permanent magnet 201 and at least one second permanent magnet 202 is included, wherein extremely
A few core component 203 includes ferromagnetic material.
At least one core component 203 may include ferrous material (ferrous material).Particularly, at least one
A core component 203 may include carbon steel, ferritic stainless steel or martensitic stain less steel.When at least one core component 203 includes
When ferromagnetic material, it is enhanced by the magnetic field strength that electrical permanent-magnet element 200 generates.The magnetic retentivity of enhancing is applied to mask
401, mask 401 is kept to the fixation position on a surface of the substrate 101.In addition, when at least one core component 203 includes
When ferromagnetic material, the whole surface of electrical permanent-magnet element 200 is more equally distributed in by the magnetic field that electrical permanent-magnet element 200 generates
On, allow magnetic retentivity to be more uniformly applied to mask 401.
As being exemplarily illustrated in Fig. 3, electrical permanent-magnet element 200 may include multiple permanent magnet elements 201,202, it is more
A control magnet 204, multiple core components 203 and multiple electromagnets 205.Permanent magnet elements 201,202 are arranged such that one
The polarity on the surface in face of adjacent core element 203 of a permanent magnet elements 201,202 and next permanent magnet elements 201,202
Another surface in face of identical adjacent core element 203 polarity it is identical.Electrical permanent-magnet element 200 shown in Fig. 3 is in
Magnetized state, wherein magnetic retentivity is applied to mask 401.
Allow by electricity forever with the electrical permanent-magnet element 200 of multiple permanent magnet elements 201,202 and multiple core components 203
The magnetic field that magnetic element 200 generates is more equally distributed in substrate 304.In addition, the magnetic field generated can have
It only include the one higher intensity of arrangement than each of permanent magnet elements 201,202 and core component 203.
According to the embodiment that can be combined with other embodiment as described herein, by the first permanent magnet 201, at least one
The region that second permanent magnet 202 and at least one core component 203 limit is at least the 80% of the area of substrate 101.
The area limited by the first permanent magnet 201, at least one second permanent magnet 202 and at least one core component 203
The effective area of electrical permanent-magnet element 200 can be referred to as.The effective area of electrical permanent-magnet element 200 is such a area:
Wherein magnetic field is generated by electrical permanent-magnet element 200, and therefore magnetic retentivity is applied to mask 401.
The effective area of electrical permanent-magnet element 200 can be less than the area of substrate 101.For example, effective area can be base
At least the 80% of the area of plate 101.When effective area is less than the area of substrate 101, electrical permanent-magnet element 200 is than substrate
Magnetic retentivity is applied to mask 401 in 101 small areas.This feature, which has, prevents mask 401 from being drawn around the edge of substrate 101
Dynamic effect, this can prevent the damage at the edge to mask 401 or substrate 101.
Alternatively, the effective area of electrical permanent-magnet element 200 can be greater than the area of substrate 101.For example, effective area can be with
Up to the 110% of the area of substrate 101 is especially up to the 130% of the area of substrate 101.When effective area is greater than substrate 101
Area when, the magnetic field that is generated by electrical permanent-magnet element 200 can also mask 401 except the area to substrate 101 element
Apply magnetic retentivity.For example, magnetic retentivity can also be applied on mask carrier 400 by electrical permanent-magnet element 200, this can have
Have and mask carrier 400 is clamped to effect of the substrate carrier 100 without using additional chucking device.
According to the embodiment that can be combined with any other embodiment as described herein, the first permanent magnet 201 and at least
One the second permanent magnet 202 includes rare earth metal.Particularly, the first permanent magnet 201 and at least one second permanent magnet 202 can wrap
Include neodymium alloy.Permanent magnet 201,202 comprising neodymium alloy can be magnetized to generate highfield and have high-coercive force or anti-demagnetization
Property.Allow at least two permanent magnets 201,202 to resist with high-coercive force to be demagnetized by least one control magnet 204.
According to the embodiment that can be combined with any other embodiment as described herein, at least one control magnet 204
Including alnico (AlNiCo) alloy.When at least one control magnet 204 includes AlNiCo alloy, at least one control magnet
204 can be magnetized to generate high-intensity magnetic field, to switch electrical permanent-magnet element 200 between unmagnetized state and magnetized state.
AlNiCo magnet has high-coercive force or anti-demagnetization.It is wrapped however, the coercivity of AlNiCo magnet is lower than in permanent magnet 201,202
The coercivity of the neodymium alloy contained.Electromagnet 205 can be applied a current to generate reversing magnetic field, include that AlNiCo is closed with switching
The polarity of at least one control magnet 204 of gold.
Fig. 4 shows the schematic side elevation of the vacuum flush system 500 according to another aspect described herein.Especially
Ground, according to can with the embodiment in conjunction with other embodiment as described herein, vacuum flush system 500 include vacuum chamber
Room 501, at least one according to the substrate carrier 100 of embodiment described herein.
Being vacuum-treated chamber 501 may include the one or more processing equipments 502 being arranged therein.One can be operated
Or multiple processing equipment 502 is to be vacuum-treated the one or more processing operations of execution in chamber 501.One or more processing is set
Standby 502 may include depositing device, Equipment for Heating Processing, cooling equipment or any other equipment for executing processing operation.Deposition is set
Standby to can be evaporation equipment, the evaporation equipment includes the crucible for accommodating material to be evaporated and the material for will evaporate
Guide at least one distribution pipe of multiple openings in distribution pipe into, these openings are directed toward substrate 101.
Processing equipment 502 can be set on movable support member, allow processing equipment 502 during the processing operation
Move through substrate 101.For example, depositing device can move past substrate in the case where processing equipment 502 includes depositing device
101, so that the material of deposition is distributed in the whole surface of substrate 101.
Vacuum flush system 500 includes at least the substrate carrier 100 according to embodiment described herein.Substrate carrier 100
It can be transported in vacuum flush system 500, transfer out vacuum flush system 500, or conveying passes through vacuum flush system
500。
Substrate carrier 100 can be arranged such that when substrate 101 is maintained at the substrate 304 of substrate carrier 100
When upper, the angle between vertical direction and substrate 101 is between 0 ° and -10 °.Particularly, substrate 101 can be arranged such that
Surface to be coated faces slightly upwardly down during deposition.This arrangement has the amount for reducing the particle being deposited on 101 surface of substrate
Effect, so as to improve the quality of deposition materials layer.In the case where substrate 101 is kept at a certain angle, processing unit can be with
It is parallelly arranged with substrate 101.
Substrate 101 is attracted to the substrate 304 of substrate carrier 100 using electrostatic chuck 300, and utilizes electricity
Permanent magnet elements 200 are by mask 401 towards the attracted by surfaces of substrate 304 and substrate 101.
Vacuum flush system 500 may include other vacuum processing chamber 501, so that vacuum flush system 500 includes
Multiple vacuum processing chambers 501.Multiple vacuum processing chambers 501 can be arranged sequentially, so that executing in the first processing chamber housing
First processing operation, substrate carrier 100 are transported to second processing chamber, and second processing behaviour is carried out in second processing chamber
Make, is operated etc. in subsequent processing chamber later.Multiple vacuum processing chambers 501 may be connected such that vacuum environment for
All or some vacuum processing chambers are shared, or being vacuum-treated chamber 501 may include locking device to keep from one
It is vacuum-treated chamber and remains to next different vacuum environments for being vacuum-treated chamber.
Vacuum flush system 500 may also include the track for being configured to non-contact transport.In this disclosure, " matched
It is set to the track for non-contact transport " it is interpreted as being configurable for carrier (especially substrate carrier or mask carrier)
The track of non-contact transport.Term " non-contact " can be regarded as carrier (such as substrate carrier or mask carrier) weight be not by
Mechanical Contact or mechanical force are kept, but are kept by magnetic force.Particularly, magnetic force can be used to keep to substitute mechanical force for carrier
In suspension or quick condition.For example, in some embodiments, Mechanical Contact is not present between carrier and conveying track, it is special
It is not during the suspension, movement and positioning of substrate carrier and/or mask carrier.
Non-contact transportation system may include substrate carrier supporting track 505 and mask carrier supported track 506, substrate carrier
Supporting track 505 and mask carrier supported track 506 are configured to promote substrate carrier 100 and mask using attraction magnetic force
At least part weight of carrier 400.Non-contact transportation system may also include substrate carrier driving track 503 and mask carrier drives
Dynamic rail road 504.Substrate carrier driving track 503 and mask carrier driving track 504 can be respectively configured as using magnetic force into
The translational motion of row substrate carrier 100 and mask carrier 400.Supporting track 505,506 and driving track 503,504 be arranged and
It is configured for vertical or substantially vertical direction support and/or transport substrate carrier 100 and mask carrier 400.
It may include linear actuator elements that substrate carrier, which drives track 503 and mask carrier driving track 504, described linear
Actuating element is configured to magnetically transport mask carrier 400 and substrate carrier 100.Linear actuator elements can be linearly
Motor.Driving track 503,504 allows substrate carrier 100 and mask carrier 400 non-contactly to transport vacuum flush system 500
In, leave vacuum flush system 500 or by vacuum flush system 500.
Non-contact transportation system has the advantages that zero friction transport of substrate carrier 100 and mask carrier 400, which reduce
Particle generates.The reduction of the particle generated by transport substrate carrier 100 and mask carrier 400 causes to be deposited on substrate 101
The Quality advance of material layer on surface.
Vacuum flush system 500 may also include at least one load locking cavity.The load locking cavity allows substrate
Carrier 100 is transported from ambient enviroment (for example, from antivacuum) to the vacuum environment being vacuum-treated in chamber 501.Load-lock chambers
Room may include the vacuum pump for generating vacuum in load-lock chambers room, and may also include at least one valve, and being used for will
Load locking cavity is vented to ambient enviroment.
Vacuum flush system 500 may also include mask alignment equipment.The mask carrier 400 of mask 401 will supported to install
To during substrate carrier 100, being properly aligned with for the mask 401 relative to substrate 101 can be executed.Mask alignment equipment can wrap
It includes and is configurable for translating at least one direction relative to substrate 101 or any device of spinning mask carrier 400.It covers
Mould alignment device can be set in being vacuum-treated chamber 501, or can be set in individual vacuum chamber, described independent
Vacuum chamber dedicated for mount and align support mask 401 mask carrier 400.
According to the embodiment that can be combined with other embodiment as described herein, substrate carrier 100 is for by mask
401 are clamped to the magnetic chuck of substrate 101, and wherein magnetic chuck includes clamping surface 304, and electrical permanent-magnet element 200 is set
It sets behind clamping surface 304.
Fig. 5 is according to another aspect described herein for showing the flow chart of the method for operation substrate carrier.
Method 600, since frame 601, comprising: the offer mask carrier on the substrate surface supported by substrate carrier in block 602,
Electrical permanent-magnet element is switched to magnetized state from unmagnetized state by applying electric current in frame 603, and in block 604
Removal electric current, method terminates in frame 605.
In block 602, mask carrier is provided on the surface of the substrate 101 supported by substrate carrier 100.Substrate 101 can
It is attracted to substrate 304 with the electrostatic force generated by electrostatic chuck 300, so that substrate 101 is maintained at fixed bit
It sets.Then mask carrier is provided on a surface of the substrate 101, so that the mask 401 with multiple holes limits multiple crystallizing fields
Domain, for depositing one or more layers material on it.
In frame 603, electrical permanent-magnet element 200 is switched to magnetized state from unmagnetized state.The electric current of electromagnet 205
Be applied in electromagnet 205 and generate magnetic field, the magnetic field has the polar effect for switching at least one control magnet 204.
The polarity for switching at least one control magnet 204 makes electrical permanent-magnet element 200 be switched to magnetized state from unmagnetized state.By
The magnetic field that permanent magnet 201,202 generates applies magnetic retentivity to mask 401, so that mask 401 is attracted to substrate
304 and substrate 101 surface, mask 401 is secured in position.
In block 604, the electric current of electromagnet 205 is removed.Due to the bistable characteristic of electrical permanent-magnet element 200, electric current
The polarity that removing allows at least one to control magnet 204 is maintained in the polarity being switched, and then allows for electrical permanent-magnet element 200
It is maintained at magnetized state.
After the electric current for removing electromagnet 205, mask carrier is magnetically fixed on a surface of the substrate 101, and
Substrate carrier 100 can be transported through into vacuum flush system to be used to handle.Electrical permanent-magnet element with bistable characteristic
200 holding magnetized states simultaneously will continue to apply magnetic retentivity to mask 401, and mask 401 is secured in position.Therefore, even if in base
During the transport of onboard body 100, mask 401 can also be inhibited relative to the movement of substrate 101, this leads to the more high-quality of sedimentary
Amount and reliability.
Method 600 can be executed with sequence defined above, and mask carrier is installed to substrate carrier 100.It is installing
In the case where mask carrier, the application electric current of electromagnet 205 can be applied in forward direction, so that electrical permanent-magnet element 200
It is switched to magnetized state from unmagnetized state, is secured in position with applying magnetic retentivity for mask 401.
On the contrary, method 600 can also be performed with reverse order, mask carrier is unloaded from substrate carrier 100.It is unloading
In the case where carrying mask carrier, the application electric current of electromagnet 205 can be applied in the opposite direction, so that electrical permanent-magnet element
200 are switched to unmagnetized state from magnetized state, are applied to the magnetic retentivity of mask 401 with release to allow to unload mask and carry
Body.
According to the embodiment that can be combined with any other embodiment as described herein, method 600 further includes in frame
Mask carrier is directed at relative to substrate carrier in 602a.Alignment mask carrier can wrap
Operation mask registration equipment is included, so that mask carrier is relative to substrate carrier 100 and/or the translation of substrate 101 and/or rotates to pre-
Positioning is set.Mask carrier precisely aligns the reliability and quality for increasing sedimentary on a surface of the substrate 101.Mask carries
The alignment of body may include the first coarse alignment and subsequent fine alignment, with ensure mask respectively in the up-down direction and/or
Right and left is upwardly deviated from 10 μm or smaller of substrate, especially 3 μm or smaller.
Although foregoing teachings are directed to the embodiment of present disclosure, the basic of present disclosure can not departed from
The other and further embodiment of present disclosure is designed in the case where range, and scope of the present disclosure by appended power
Sharp claim determines.
Particularly, this written description uses examples to disclose disclosure, including optimal mode, and also makes this field
Any technical staff can practice described theme, including any device or system of manufacture and use and execute any institute
The method being incorporated to.Although various particular implementations have had been disclosed above, embodiments described above is not repelled mutually
Feature can be combined with each other.Scope of patent protection is defined by the claims, and other examples are it is contemplated that claims
In the range of, as long as long as they have the not structural element different with the literal language of claim or they include and power
Equivalent structural elements of the literal language without essence difference that benefit requires.
Claims (15)
1. a kind of substrate carrier for the supporting substrate in vacuum chamber, comprising:
Electrical permanent-magnet element is configurable for applying magnetic retentivity to mask.
2. substrate carrier according to claim 1 further comprises electrostatic chuck and is configurable for supporting the base
The substrate of plate.
3. substrate carrier according to claim 1 or 2, wherein the electrical permanent-magnet element is being magnetized by applying electric current
It is changeable between state and unmagnetized state.
4. substrate carrier according to claim 3, wherein the electrical permanent-magnet element is configured as removing the electric current
It is maintained at magnetized state or unmagnetized state later.
5. substrate carrier according to any one of claim 1 to 4, wherein the electrical permanent-magnet element includes:
Clamp magnet component, including clamp magnet；With
Magnet assembly, including at least one control magnet and at least one coil are controlled, wherein at least one described coil is basic
Upper at least one described control magnet for surrounding the control magnet assembly is simultaneously configured as at least one described control magnetic of switching
The polarity of body.
6. substrate carrier according to any one of claim 1 to 5, wherein the substrate carrier is configurable for supporting
The substrate and the mask.
7. the mask chucking device in a kind of vacuum chamber, comprising:
Electrical permanent-magnet element, comprising:
First permanent magnet,
At least the second permanent magnet；With
Magnet assembly is controlled, at least one control magnet and the electromagnet adjacent at least one control magnet.
8. mask chucking device according to claim 7, wherein the electrical permanent-magnet element further comprises at least one
Core component, at least one described core component are arranged between first permanent magnet and at least second permanent magnet,
Described at least one core component include ferromagnetic material.
9. mask chucking device according to claim 8, wherein by first permanent magnet, it is described at least one second forever
The region that magnet and at least one described core component limit is at least the 80% of the area of the substrate.
10. mask chucking device according to any one of claims 7 to 9, wherein first permanent magnet and it is described extremely
Few second permanent magnet includes rare earth metal, especially neodymium alloy.
11. mask chucking device according to any one of claims 7 to 10, wherein at least one described control magnet packet
Include alnico (AlNiCo) alloy.
12. a kind of vacuum flush system, comprising:
It is vacuum-treated chamber, is had according at least to substrate carrier described in any one of claims 1 to 6 or according to claim
Mask chucking device described in 7 to 11.
13. vacuum flush system according to claim 12, wherein the substrate carrier is for mask to be clamped to base
The magnetic chuck of plate, the magnetic chuck include:
Clamping surface and it is located at the subsequent electrical permanent-magnet element of the clamping surface.
14. a kind of method for operating the electrical permanent-magnet element in the system with electrical permanent-magnet element, comprising:
Mask carrier is provided in the surface of the substrate supported by the substrate carrier；
The electrical permanent-magnet element is switched to magnetized state from unmagnetized state by the electric current by applying electromagnet；With
Remove the electric current.
15. according to the method for claim 14, further comprising making described cover before switching the electrical permanent-magnet element
Mould carrier is aligned relative to the substrate carrier.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/080238 WO2019101319A1 (en) | 2017-11-23 | 2017-11-23 | Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110073481A true CN110073481A (en) | 2019-07-30 |
Family
ID=60782169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780051374.8A Pending CN110073481A (en) | 2017-11-23 | 2017-11-23 | The method for being used to support the substrate carrier of substrate, mask chucking device, vacuum flush system and operation substrate carrier |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2020503663A (en) |
| KR (1) | KR20190062380A (en) |
| CN (1) | CN110073481A (en) |
| WO (1) | WO2019101319A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2808620C2 (en) * | 2022-02-28 | 2023-11-30 | Акционерное общество "Омский научно-исследовательский институт приборостроения" (АО "ОНИИП") | Device for attaching substrates during deposition of thin films (variants) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11189516B2 (en) | 2019-05-24 | 2021-11-30 | Applied Materials, Inc. | Method for mask and substrate alignment |
| WO2020242611A1 (en) | 2019-05-24 | 2020-12-03 | Applied Materials, Inc. | System and method for aligning a mask with a substrate |
| US11756816B2 (en) | 2019-07-26 | 2023-09-12 | Applied Materials, Inc. | Carrier FOUP and a method of placing a carrier |
| US10916464B1 (en) | 2019-07-26 | 2021-02-09 | Applied Materials, Inc. | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency |
| US11196360B2 (en) | 2019-07-26 | 2021-12-07 | Applied Materials, Inc. | System and method for electrostatically chucking a substrate to a carrier |
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- 2017-11-23 CN CN201780051374.8A patent/CN110073481A/en active Pending
- 2017-11-23 JP JP2019504983A patent/JP2020503663A/en active Pending
- 2017-11-23 WO PCT/EP2017/080238 patent/WO2019101319A1/en active Application Filing
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| WO2009069743A1 (en) * | 2007-11-30 | 2009-06-04 | Canon Anelva Corporation | Substrate processing apparatus and substrate processing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2020503663A (en) | 2020-01-30 |
| KR20190062380A (en) | 2019-06-05 |
| WO2019101319A1 (en) | 2019-05-31 |
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Application publication date: 20190730 |
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