CN110061722A - A kind of bearing power adjustment circuit by MOS type device frequency conversion drive - Google Patents

A kind of bearing power adjustment circuit by MOS type device frequency conversion drive Download PDF

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Publication number
CN110061722A
CN110061722A CN201910310814.8A CN201910310814A CN110061722A CN 110061722 A CN110061722 A CN 110061722A CN 201910310814 A CN201910310814 A CN 201910310814A CN 110061722 A CN110061722 A CN 110061722A
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China
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output end
diode
power
circuit
power supply
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CN201910310814.8A
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Chinese (zh)
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CN110061722B (en
Inventor
徐开凯
雷浩东
黄平
李为民
赵建明
施宝球
李建全
刘继芝
徐银森
李晶
陈勇
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Shanghai Fine Chip Semiconductor Co ltd
Sichuan Sichip Micro Technologies Co ltd
Sichuan Suining Lipuxin Microelectronic Co ltd
Sichuan Xinhe Li Cheng Technology Co ltd
University of Electronic Science and Technology of China
Sichuan Blue Colour Electronics Technology Co Ltd
Original Assignee
China Chippacking Technology Co ltd
Shanghai Fine Chip Semiconductor Co ltd
Sichuan Sichip Micro Technologies Co ltd
Sichuan Suining Lipuxin Microelectronic Co ltd
Sichuan Xinhe Li Cheng Technology Co ltd
University of Electronic Science and Technology of China
Sichuan Blue Colour Electronics Technology Co Ltd
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Application filed by China Chippacking Technology Co ltd, Shanghai Fine Chip Semiconductor Co ltd, Sichuan Sichip Micro Technologies Co ltd, Sichuan Suining Lipuxin Microelectronic Co ltd, Sichuan Xinhe Li Cheng Technology Co ltd, University of Electronic Science and Technology of China, Sichuan Blue Colour Electronics Technology Co Ltd filed Critical China Chippacking Technology Co ltd
Priority to CN201910310814.8A priority Critical patent/CN110061722B/en
Publication of CN110061722A publication Critical patent/CN110061722A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/017Adjustment of width or dutycycle of pulses
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K7/00Modulating pulses with a continuously-variable modulating signal
    • H03K7/08Duration or width modulation ; Duty cycle modulation

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  • Dc-Dc Converters (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Abstract

The invention discloses a kind of bearing power adjustment circuits by MOS type device frequency conversion drive, for driving single-phase load, including power supply circuit, power control circuit to be connected in electric main after the power control circuit is concatenated with single-phase load with power supply circuit;The power input of the first via cathode output end connection gate driving circuit of power supply circuit, the power input of the second road cathode output end connection pwm signal module of power supply circuit, power output end, the power output end of gate driving circuit and the signal output end of power control circuit of the cathode output end connection pwm signal module of power supply circuit;The signal output end of pwm signal module connects the signal input part of power control circuit by gate driving circuit.The configuration of the present invention is simple can enable metal-oxide-semiconductor be directly used in alternating current circuit and control bearing power.The present invention is suitable for driving any one incandescent lamp loads, single-phase AC motor load, resistance wire load, the load of single LED light group and the load of double LED light group.

Description

A kind of bearing power adjustment circuit by MOS type device frequency conversion drive
Technical field
The invention belongs to power electronics fields, are related to a kind of bearing power adjustment circuit, it is specifically a kind of by The bearing power adjustment circuit of MOS type device frequency conversion drive.
Background technique
In many fields of industrial production and life, people need to carry out the power of single-phase load stable control and tune It is whole, to realize the energy conservation and the adjustable function of gear of electric equipment products.The power regulating method of single-phase load is mainly at present The power of load is adjusted using the voltage in silicon-controlled adjusting load.Silicon controlled rectifier regulation power is the side by changing the angle of flow Method changes load voltage waveform, so that the average value for changing bearing power achievees the purpose that power regulation.This is allowed for controllably The load voltage waveform that silicon adjusts power is imperfect, and that there are leakage currents is big, cannot turn off the disadvantages of complicated with circuit at any time.
The load of single-phase AC motor class can be traditional by tapping method, series reactance method and series connected resistance etc. Mechanical method adjusts power, but the power adjustment of gear can only be fixed in this method.Furthermore motor can also lead to The mode for crossing change working power frequency controls and adjusts power.The method of variable frequency adjustment power needs to increase additional motor and drives Dynamic chip causes circuit structure complicated, increases cost, simultaneously because needing to carry out the conversion of alternating current and direct current, so depositing In energy loss.It is that current urgent need solves that how to effectively control the power with adjustment single-phase load without increasing complexity in circuits The problem of.
Summary of the invention
To solve drawbacks described above existing in the prior art, the present invention is intended to provide one kind is by MOS type device frequency conversion drive Bearing power adjustment circuit, bearing power is directly controlled by metal-oxide-semiconductor, so that circuit structure is simple, saves cost, and bear The voltage waveform of load is more complete, and bearing power adjusting range is wide.
To achieve the above object, used technical solution is as follows by the present invention:
A kind of bearing power adjustment circuit by MOS type device frequency conversion drive, for driving single-phase load, including power supply circuit, Pwm signal module, gate driving circuit, power control circuit, wherein after the power control circuit is concatenated with single-phase load, It is connected in electric main with power supply circuit;The electricity of the first via cathode output end connection gate driving circuit of the power supply circuit Source input terminal, the power input of the second road cathode output end connection pwm signal module of power supply circuit, the cathode of power supply circuit Power output end, the power output end of gate driving circuit and the letter of power control circuit of output end connection pwm signal module Number output end;The signal output end of pwm signal module connects the signal input part of power control circuit by gate driving circuit.
As the restriction to power supply circuit in the present invention: the power supply circuit include the first transformer, first diode extremely The first rectifier bridge, first capacitor to third capacitor, the first voltage stabilizing chip and the second voltage stabilizing chip that 4th diode is constituted, it is described The primary side winding of first transformer connects electric main, and vice-side winding connects the input terminal of the first rectifier bridge, the first rectifier bridge Cathode output end is separately connected the input terminal of the anode of first capacitor, the input terminal of the first voltage stabilizing chip and the second voltage stabilizing chip, The cathode output end of first rectifier bridge connects first capacitor to the cathode of third capacitor, the common end and second of the first voltage stabilizing chip The common end of voltage stabilizing chip;The output end of anode the second voltage stabilizing chip of connection of second capacitor, the anode connection the of third capacitor The output end of one voltage stabilizing chip, first via cathode output end of the output end of the first voltage stabilizing chip as power supply circuit, second is steady Second road cathode output end of the output end of chip as power supply circuit is pressed, the cathode output end of the first rectifier bridge is as power supply electricity The cathode output end on road.
Limit as to the another of power supply circuit in the present invention: the power supply circuit includes the first transformer, the one or two The first rectifier bridge that pole pipe is constituted to the 4th diode, 3rd resistor, the 4th resistance, the 7th to the 9th capacitor, the first pressure stabilizing two Grade pipe, the second zener diode, the primary side winding of first transformer connect electric main, the first rectification of vice-side winding connection The input terminal of bridge, after the cathode output end of the first rectifier bridge concatenates the 4th resistance, the first via anode as power supply circuit is exported End;After the cathode output end concatenation 3rd resistor of first rectifier bridge, the second road cathode output end as power supply circuit;Described The cathode output end of one rectifier bridge is being separately connected the cathode, the first zener diode and the second zener diode of the 7th capacitor just Extremely afterwards as the cathode output end of power supply circuit, the cathode output end of anode the first rectifier bridge of connection of the 7th capacitor, first is steady The cathode of pressure diode and the second zener diode is separately connected the second road cathode output end of power supply circuit, and the 8th capacitor simultaneously connects In the first zener diode both ends, the 9th capacitor is connected to the second zener diode both ends.
As the present invention in pwm signal module restriction: the pwm signal module includes single-chip microcontroller, the first crystal oscillator, Four capacitors and the 5th capacitor, the first key to the 4th key, the clock that first crystal oscillator both ends connect single-chip microcontroller input both ends, And first crystal oscillator one end concatenate the 4th capacitor, the other end is all connected to the common end of single-chip microcontroller after concatenating the 5th capacitor;It is described Four keys be serially connected with four of single-chip microcontroller respectively between Key pad port and common end, the power input of the single-chip microcontroller is made The second road cathode output end of power supply circuit is connected for the power input of pwm signal module, the common end of single-chip microcontroller is as PWM The cathode output end of the power output end connection power supply circuit of signaling module, the signal output end of single-chip microcontroller is as pwm signal mould The signal output end of block.
As the restriction to gate driving circuit in the present invention: the gate driving circuit includes first resistor and the second electricity Resistance, the first triode and the second triode, the 6th capacitor, the 5th diode, the second resistance are connected to the first triode Emitter and collector both ends, the 5th diode are connected to base stage and the emitter both ends of the first triode, the one or three pole After the base stage of pipe is connect by the 6th capacitor with the base stage of the second triode, letter of the first resistor as gate driving circuit is concatenated The signal output end of number input terminal connection single-chip microcontroller, the collector of first triode are connected with the collector of the second triode Signal output end as gate driving circuit;Power input of the emitter of first triode as gate driving circuit The first via cathode output end of end connection power supply circuit, the emitter of the second triode is as gate driving circuit power output end Connect the cathode output end of power supply circuit.
As the restriction to power control circuit in the present invention: the power control circuit includes the 6th diode to the 9th The midpoint connection exchange city of the second rectifier bridge and the first metal-oxide-semiconductor that diode is constituted, the 6th diode and the 7th diode The midpoint of electric port, the 8th diode and the 9th diode is connect with single-phase load, in the 6th diode and the 8th diode The midpoint of the drain electrode of point the first metal-oxide-semiconductor of connection, the 7th diode and the 9th diode is connected as function with the source electrode of the first metal-oxide-semiconductor The cathode output end of the signal output end connection power supply circuit of rate control circuit, the grid of the first metal-oxide-semiconductor is as power control electricity The signal input part on road is connected with the signal output end of gate driving circuit.
Limit as to the another of power control circuit in the present invention: the power control circuit includes the 6th diode The second rectifier bridge and the first IGBT constituted to the 9th diode is managed, the midpoint connection of the 6th diode and the 7th diode The midpoint of electric main port, the 8th diode and the 9th diode is connect with single-phase load, the 6th diode and the eight or two pole The midpoint of pipe connects the collector of the first IGBT pipe, the transmitting at the midpoint and the first IGBT pipe of the 7th diode and the 9th diode The cathode output end being extremely connected as the signal output end connection power supply circuit of power control circuit, the grid of the first IGBT pipe are made It is connected for the signal input part of power control circuit with the signal output end of gate driving circuit.
As in the present invention individual event load restriction: the single-phase load include incandescent lamp, motor, resistance wire and LED light group.
The present invention is due to using above-mentioned structure, and compared with prior art, acquired technological progress is:
(1) of the invention by the signal output end of power control circuit, the power output end of gate driving circuit, pwm signal module Power output end, power supply circuit cathode output end be pulled to same current potential, enable power control circuit only and include a rectification Bridge and a metal-oxide-semiconductor, the cathode of power supply circuit are necessarily connected to the signal output end of power control circuit, guarantee that metal-oxide-semiconductor is in Turn-on condition, and rectified by rectifier bridge and guarantee that the drain electrode of metal-oxide-semiconductor both ends and source voltage are positive always, and then control can be passed through Metal-oxide-semiconductor on and off controls the power of single-phase load, and without using driving chip or additional circuit, structure is simple, reduce The cost of bearing power adjustment.
(2) present invention is equipped with gate driving circuit, passes through the second triode and 3rd resistor partial pressure control metal-oxide-semiconductor grid electricity Pressure, when being changed using pwm signal, the of short duration conducting of the first triode increases electric current, improves opening for metal-oxide-semiconductor power adjustment Close speed.
(3) present invention controls metal-oxide-semiconductor turn-on time by gate driving circuit using pwm signal, adjusts pwm signal duty Than and the period, and then control the power of single-phase load so that single-phase load both end voltage is close to complete sinusoidal voltage waveform, And power adjustment of the present invention is wide, the frequency of adjustable pwm signal.
In conclusion circuit of the present invention is simple, without adding additional driving chip, metal-oxide-semiconductor can be enabled to be directly used in friendship The power of single-phase load is effectively adjusted in current circuit.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention It applies example to be used to explain the present invention together, not be construed as limiting the invention.
In the accompanying drawings:
Fig. 1 is the functional block diagram of the present invention 1;
Fig. 2 is the circuit diagram of the embodiment of the present invention;
Fig. 3 a~3e is respectively the circuit diagram of single-phase load in the embodiment of the present invention;
Fig. 4 is the another form of circuit diagram of power supply circuit in the embodiment of the present invention;
Fig. 5 is the power control circuit schematic diagram that IGBT substitutes metal-oxide-semiconductor in the embodiment of the present invention;
Fig. 6 is pwm signal and metal-oxide-semiconductor gate-source voltage waveform diagram in the embodiment of the present invention;
The load voltage waveform figure of pwm signal duty ratio is adjusted in the embodiment of the present invention of the position Fig. 7
Fig. 8 is the load voltage waveform figure that PWM signal frequency is adjusted in the embodiment of the present invention.
In figure: 1, power supply circuit, 2, pwm signal module, 3, gate driving circuit, 4, power control circuit, 5, single-phase negative It carries, 51, incandescent lamp loads, 52, single-phase AC motor load, 53, resistance wire load, 54, the load of double LED light group, 55, list Arrange LED light group load.
Specific embodiment
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.It should be appreciated that preferred reality described herein Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
A kind of bearing power adjustment circuit by MOS type device frequency conversion drive of embodiment
Referring to Fig.1, Fig. 2, the present embodiment include power supply circuit 1, pwm signal module 2, gate driving circuit 3, power control circuit 4 and single-phase load 5 be connected in electric main after the power control circuit 4 is concatenated with single-phase load 5 with power supply circuit 1, The power input of the first via cathode output end connection gate driving circuit of the power supply circuit 1, the second tunnel of power supply circuit 1 Cathode output end connects the power input of pwm signal module 2, and the cathode output end of power supply circuit 1 connects pwm signal module 2 Power output end, the power output end of gate driving circuit 3 and the signal output end of power control circuit 4, pwm signal module The signal input part of 2 signal output end connection gate driving circuit 3, the signal output end of gate driving circuit 3 connect power The signal input part of control circuit 4.
Wherein, the power supply circuit 1 in the present embodiment is as shown in Fig. 2, include the first transformer T1, first diode D1 to the The first rectifier bridge, first capacitor C1 to third capacitor C3, the first voltage stabilizing chip IC1 and the second pressure stabilizing core that four diode D4 are constituted Piece IC2(the present embodiment uses the voltage stabilizing chip of LM7812 model and LM7805 model in the prior art), first transformation The primary side winding of device T1 connects electric main, and vice-side winding connects the input terminal of the first rectifier bridge, the anode of the first rectifier bridge Output end is separately connected the input of the anode of first capacitor C1, the input terminal of the first voltage stabilizing chip IC1 and the second voltage stabilizing chip IC2 End, the cathode output end of the first rectifier bridge are separately connected the cathode of first capacitor C1 to third capacitor C3, the first voltage stabilizing chip IC1 Common end and the second voltage stabilizing chip IC2 common end;And the output of the second voltage stabilizing chip IC2 of anode connection of the second capacitor C2 End, the output end of the first voltage stabilizing chip IC1 of anode connection of third capacitor C3, the output end of the first voltage stabilizing chip IC1 is as confession Second road anode of the output end of the first via cathode output end V1, the second voltage stabilizing chip IC2 of circuit 1 as power supply circuit 1 Output end V2, cathode output end S of the cathode output end of the first rectifier bridge as power supply circuit 1.
The power supply circuit 1 of the present embodiment can also use circuit as shown in Figure 4, specifically include the first transformer T1, the The first rectifier bridge that one diode D1 is constituted to the 4th diode D4,3rd resistor R3, the 4th resistance R4, the 7th capacitor C7 to The primary side winding connection exchange of nine capacitor C9, the first zener diode Z1, the second zener diode Z2, the first transformer T1 Alternating current, vice-side winding connect the input terminal of the first rectifier bridge and make after the cathode output end of the first rectifier bridge concatenates the 4th resistance R4 For the first via cathode output end V1 of power supply circuit 1;After the cathode output end concatenation 3rd resistor R3 of first rectifier bridge, as confession Second road cathode output end V2 of circuit 1;The cathode output end of first rectifier bridge is separately connected the negative of the 7th capacitor C7 As the cathode output end S of power supply circuit 1 after the anode of pole, the first zener diode Z1 and the second zener diode Z2, the 7th The cathode output end of anode the first rectifier bridge of connection of capacitor C7, the first zener diode Z1 and the second zener diode Z2's is negative Pole is separately connected the second road cathode output end V2 of power supply circuit 1, and the 8th capacitor C8 is connected to the first both ends voltage-stabiliser tube Z1, and the 9th Capacitor C9 is connected to the second both ends zener diode Z2.
Pwm signal module 2 in the present embodiment is as shown in Fig. 2, include single-chip microcontroller (using in the prior art STM32F103C8T6 model single-chip microcontroller), the first crystal oscillator Y1, the 4th capacitor C4 and the 5th capacitor C5, the first key K1 to the 4th press Key K4, the input end of clock OSCIN and OSCOUT of the both ends the first crystal oscillator Y1 connection single-chip microcontroller, and one end of the first crystal oscillator Y1 Concatenate the 4th capacitor C4, the other end is all connected to the public terminal GND of single-chip microcontroller, first key after concatenating the 5th capacitor C5 K1 to the 4th key K4 is serially connected with four of single-chip microcontroller between Key pad port and public terminal GND respectively;The power supply of the single-chip microcontroller Second road cathode output end V2 of the input terminal VDD as the power input connection power supply circuit 1 of pwm signal module 2, single-chip microcontroller Public terminal GND as pwm signal module 2 power output end connection power supply circuit 1 cathode output end S, the letter of single-chip microcontroller The signal input part P of number output end PA6 as the signal output end connection gate driving circuit of pwm signal module 2.
Gate driving circuit 3 in the present embodiment is as shown in Fig. 2, include first resistor R1 and second resistance R2, the one or three Pole pipe Q1 and the second triode Q2, the 6th capacitor C6, the 5th diode D5, the second resistance R2 are connected to the first triode Q1 Emitter and collector both ends, the 5th diode D5 be connected to base stage and the emitter both ends of the first triode Q1, described the After the base stage of one triode Q1 is connect by the 6th capacitor C6 with the base stage of the second triode Q2, first resistor R1 is concatenated as grid The signal output end P of the signal input part connection pwm signal module 2 of pole driving circuit 3, the collector of the first triode Q1 The signal output end being connected with the collector of the second triode Q2 as gate driving circuit 3, and the transmitting of the first triode Q1 Pole is connected as the power input of gate driving circuit 3 with the first via cathode output end V1 of corresponding power supply circuit 1, and the two or three The emitter of pole pipe Q2 is then used as the power output end of gate driving circuit 3, with the cathode output end S phase of corresponding power supply circuit 1 Even.
Power control circuit 4 in the present embodiment is as shown in Fig. 2, include that the 6th diode D6 to the 9th diode D9 is constituted The second rectifier bridge and the first metal-oxide-semiconductor M1, the 6th diode D6 and the 7th diode D7 midpoint connect electric main end Mouthful, the midpoint of the 8th diode D8 and the 9th diode D9 are connect with single-phase load, the 6th diode D6 and the 8th diode D8 Midpoint connect the drain electrode of the first metal-oxide-semiconductor M1, the midpoint of the 7th diode D7 and the 9th diode D9 and the source of the first metal-oxide-semiconductor M1 The signal output end being extremely connected as power control circuit 4, signal of the grid of the first metal-oxide-semiconductor M1 as power control circuit 4 Input terminal is connected with the signal output end G of gate driving circuit 3, and the cathode of the source electrode connection power supply circuit 1 of the first metal-oxide-semiconductor M1 is defeated Outlet S.
First metal-oxide-semiconductor M1 described in the present embodiment can be replaced with the first IGBT pipe VT1, such as Fig. 5 of the circuit after substitution institute Show, including the 6th diode D6 to the 9th diode D9 the second rectifier bridge constituted and the first IGBT pipe VT1, the described 6th 2 The midpoint of pole pipe D6 and the 7th diode D7 connect electric main port, the midpoint of the 8th diode D8 and the 9th diode D9 with Single-phase load 5 connects, the collector of the first IGBT pipe VT1 of midpoint connection of the 6th diode D6 and the 8th diode D8, and the 7th The letter that the midpoint of diode D7 and the 9th diode D9 are connected with the emitter of the first IGBT pipe VT1 as power control circuit 4 The cathode output end S of number output end connection power supply circuit 1, signal of the grid of the first IGBT pipe VT1 as power control circuit 4 Input terminal G is connected with the signal output end of gate driving circuit 3.
Single-phase load in the present embodiment, can be to incandescent lamp loads 51, single-phase AC motor as shown in Fig. 3 a~3e Any one load in load 52, resistance wire load 53, single LED light group load 54 and double LED light group load 55 carries out Driving.
The concrete operating principle of the present embodiment are as follows: power control circuit 4 and single-phase load 5 are serially connected in alternating current, are exchanged Electricity by the second rectifier bridge rectify so that the first metal-oxide-semiconductor M1 drain electrode, source voltage difference or the first IGBT pipe VT1 collector, The voltage difference of emitter is positive always.It, always can positive guide when first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 meet turn-on condition It is logical.The grid signal of first metal-oxide-semiconductor M1 or the grid signal of the first IGBT pipe VT1 are generated by pwm signal module 2, adjust PWM letter Number duty ratio and frequency can control turn-on deadline time of the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1, and then control single-phase The power of load.
Pwm signal module 2 in the present embodiment is made of single-chip computer and its peripheral circuit, is provided for power control circuit 4 Adjustable pwm signal.First crystal oscillator Y1, the 4th capacitor C4 and the 5th capacitor C5 composition crystal oscillating circuit provide frequency for single-chip microcontroller and are The clock of 8MHz inputs.Internal timer is set by programming, configuration tetra- ports single-chip microcontroller PA1 to PA4 are key-press input The value for controlling timer overturning, to control the duty ratio and frequency of pwm signal.Single-chip microcontroller needs 5V DC-voltage supply, Although the pwm signal of the port PA6 output 5V can be such that the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 is connected, cannot open completely It opens, metal-oxide-semiconductor or IGBT pipe conducting resistance are big at this time, and both ends pressure drop is big.The present embodiment is 12V grid by the way that power input is added Pwm signal is output on the grid G of the first metal-oxide-semiconductor M1 or the grid of the first IGBT pipe VT1 by driving circuit 3 after amplification, It can reduce conduction voltage drop and the switch response time of metal-oxide-semiconductor or IGBT pipe.When pwm signal output end P is 0V stable state, first Triode Q1 and the second triode Q2 cut-off, the grid voltage of the grid voltage of the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 is by the Two resistance R2 are pulled upward to the voltage of the power input V1, V1 of gate driving circuit 3 and export for the first via anode of power supply circuit 1 12V, the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 conducting;When pwm signal output end V3 is 5V stable state, the first triode Q1 is cut Only, the second triode Q2 is connected.G point voltage is divided to obtain by second resistance R2 and the second triode Q2, due to second resistance R2 Value is larger, and the amplification factor of the second triode Q2 is smaller, and conducting voltage is 0.1V or so, the grid source electrode electricity of the first metal-oxide-semiconductor M1 The emitter voltage of pressure or the first IGBT pipe VT1 are 0.1V or so, pipe cut-off;When pwm signal output end P jumps to 0V by 5V When, since the voltage at the both ends first capacitor C1 is constant, the first triode Q1 conducting, the grid voltage of the first metal-oxide-semiconductor M1 increases rapidly Greatly, until first capacitor C1 is charged to 11.3V, the first triode Q1 cut-off, the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 are fast Speed conducting, switch response time reduce.Gate driving circuit 3 ensure that the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 are fully on And improve the power regulation speed of single-phase load.
Alternating current is depressured to 12V by the first transformer T1, divides after the rectification of the second rectifier bridge and first capacitor C1 filtering It is not input to voltage stabilizing chip IC1 and IC2.Third capacitor C3 and the second capacitor C2 is the filter capacitor for exporting direct current.Pressure stabilizing core Piece IC1 exports 12V DC electricity, and voltage stabilizing chip IC2 exports 5V direct current, is powered for other circuit modules of the present embodiment.
The present embodiment can also be using another power supply circuit, and physical circuit is as shown in figure 4, on the basis of the first rectifier bridge On, by 3rd resistor R3 and the 4th resistance R4 current limliting, by the first zener diode Z1 and the second zener diode Z2 pressure stabilizing with And the 8th capacitor C8 and the 9th capacitor C9 filtering after obtain 5V and 12V two-way DC voltage.In the present embodiment, due to gate driving Circuit 3 needs the DC supply input of 12V, and pwm signal module 4 needs 5V DC supply input, and the first via of power supply circuit 1 Cathode output end exports 12V DC electricity, and the second road cathode output end exports 5V direct current, therefore power supply circuit 1 is capable of providing grid Voltage needed for pole driving circuit 3, pwm signal module 4, and the cathode output end S of power supply circuit 1 and above-mentioned two module is negative The connection of pole output end, constitutes circuit.And the zero curve and firewire access due to alternating current can not be fixed, and cause to be input to power control electricity The alternating current on road 4 can not also determine, if the access of power control circuit 4 is firewire, in the positive half cycle of firewire input voltage, with The increase of input voltage, the voltage of the emitter of the source electrode of the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 can also increase with it, When the first metal-oxide-semiconductor M1 gate-source voltage difference or the first IGBT pipe VT1 grid and emitter voltage difference be less than metal-oxide-semiconductor or When the threshold voltage that IGBT pipe is opened, the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1 can end, and circuit can not work normally.Cause This, in order to realize the grid control to the control of the grid of the first metal-oxide-semiconductor M1 or the first IGBT pipe VT1, the present embodiment is by the first MOS The emitter of the source electrode of pipe M1 or the first IGBT pipe VT1 are connected with the cathode S of power supply circuit 1, make the signal of gate driving circuit 3 Output end is connected to the grid of the first metal-oxide-semiconductor M1 or the grid of the first IGBT pipe VT1, ensure that the first metal-oxide-semiconductor M1 or first IGBT pipe VT1 is constantly on state when controllable.
The gate-source voltage waveform of the pwm signal voltage waveform of the present embodiment and the first metal-oxide-semiconductor M1 are as shown in fig. 6, PWM believes Number for it is low effectively, period and low level time are respectively T2 and T1.When pwm signal is 0V low level, VGSFor 12V high level; When pwm signal is 5V high level, VGSFor the low level of 0.1V or so.The minimum 0.2s of low level time T1 of pwm signal, it is maximum For T2.As shown in Figure 7, there are two types of the power adjustment modes of the present embodiment: first is that adjusting pwm signal duty ratio (VLFor load electricity Corrugating), it keeps T2 constant, T1 is increased by key K1, key K2 reduces T1;Second is that adjusting PWM signal frequency (such as Fig. 8 institute Show), it keeps T1 constant, T2 is increased by key K3, key K4 reduces T2.Therefore by adjusting pwm signal duty ratio and frequency, It can flexibly realize the power regulation of single-phase load.

Claims (9)

1. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive, for driving single-phase load, it is characterised in that: Including power supply circuit, pwm signal module, gate driving circuit, power control circuit, wherein the power control circuit and list After phase load concatenation, it is connected in electric main with power supply circuit;The first via cathode output end of the power supply circuit connects grid The power input of pole driving circuit, the power input of the second road cathode output end connection pwm signal module of power supply circuit, The cathode output end of power supply circuit connects the power output end and function of the power output end of pwm signal module, gate driving circuit The signal output end of rate control circuit;The signal output end of pwm signal module connects power control electricity by gate driving circuit The signal input part on road.
2. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 1, feature exist In: the power supply circuit include the first rectifier bridge, the first capacitor that the first transformer, first diode are constituted to the 4th diode To third capacitor, the first voltage stabilizing chip and the second voltage stabilizing chip, the primary side winding of first transformer connects electric main, secondary Side winding connects the input terminal of the first rectifier bridge, and the cathode output end of the first rectifier bridge is separately connected the anode of first capacitor, the The input terminal of the input terminal of one voltage stabilizing chip and the second voltage stabilizing chip, the cathode output end connection first capacitor of the first rectifier bridge is extremely The cathode of third capacitor, the common end of the first voltage stabilizing chip and the second voltage stabilizing chip common end;The anode connection of second capacitor The output end of second voltage stabilizing chip, third capacitor anode connection the first voltage stabilizing chip output end, the first voltage stabilizing chip it is defeated First via cathode output end of the outlet as power supply circuit, the output end of the second voltage stabilizing chip as power supply circuit the second tunnel just Pole output end, cathode output end of the cathode output end of the first rectifier bridge as power supply circuit.
3. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 1, feature exist In: the power supply circuit include the first rectifier bridge, the third electricity that the first transformer, first diode are constituted to the 4th diode Resistance, the 4th resistance, the 7th to the 9th capacitor, the first zener diode, the second zener diode, the primary side of first transformer Winding connects electric main, and vice-side winding connects the input terminal of the first rectifier bridge, the cathode output end concatenation the of the first rectifier bridge First via cathode output end after four resistance, as power supply circuit;After the cathode output end concatenation 3rd resistor of first rectifier bridge, The second road cathode output end as power supply circuit;The cathode output end of first rectifier bridge is separately connected the negative of the 7th capacitor As the cathode output end of power supply circuit after the anode of pole, the first zener diode and the second zener diode, the 7th capacitor The cathode of the cathode output end of anode the first rectifier bridge of connection, the first zener diode and the second zener diode is separately connected confession Second road cathode output end of circuit, the 8th capacitor are connected to the first zener diode both ends, and the 9th capacitor is connected to second Zener diode both ends.
4. a kind of bearing power by MOS type device frequency conversion drive as claimed in any of claims 1 to 3 adjusts electricity Road, it is characterised in that: the pwm signal module includes single-chip microcontroller, the first crystal oscillator, the 4th capacitor and the 5th capacitor, the first key To the 4th key, the clock that first crystal oscillator both ends connect single-chip microcontroller inputs both ends, and one end concatenation the 4th of the first crystal oscillator The common end of single-chip microcontroller is all connected to after capacitor, the other end the 5th capacitor of concatenation;Four keys are serially connected with monolithic respectively Four of machine are between Key pad port and common end, power input of the power input of the single-chip microcontroller as pwm signal module The common end of second road cathode output end of end connection power supply circuit, single-chip microcontroller connects as the power output end of pwm signal module Connect the cathode output end of power supply circuit, signal output end of the signal output end of single-chip microcontroller as pwm signal module.
5. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 4, feature exist In: the gate driving circuit include first resistor and second resistance, the first triode and the second triode, the 6th capacitor, the Five diodes, the second resistance are connected to emitter and the collector both ends of the first triode, and the 5th diode is connected to the The base stage of one triode and emitter both ends, the base stage of first triode pass through the base stage of the 6th capacitor and the second triode After connection, concatenation first resistor connects the signal output end of single-chip microcontroller as the signal input part of gate driving circuit, and described the The signal output end that the collector of one triode is connected with the collector of the second triode as gate driving circuit;Described first First via cathode output end of the emitter of triode as the power input connection power supply circuit of gate driving circuit, second Cathode output end of the emitter of triode as gate driving circuit power output end connection power supply circuit.
6. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 5, feature exist In: the power control circuit includes the second rectifier bridge and the first metal-oxide-semiconductor that the 6th diode to the 9th diode is constituted, described The midpoint of 6th diode and the 7th diode connects electric main port, midpoint and the list of the 8th diode and the 9th diode The midpoint of phase load connection, the 6th diode and the 8th diode connects the drain electrode of the first metal-oxide-semiconductor, the 7th diode and the 9th 2 The midpoint of pole pipe, which is connected with the source electrode of the first metal-oxide-semiconductor as the signal output end of power control circuit, connect the cathode of power supply circuit Output end, the grid of the first metal-oxide-semiconductor is as the signal input part of power control circuit and the signal output end of gate driving circuit It is connected.
7. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 5, feature exist In: the power control circuit includes that the second rectifier bridge that the 6th diode to the 9th diode is constituted and the first IGBT are managed, institute State the midpoint connection electric main port of the 6th diode and the 7th diode, the midpoint of the 8th diode and the 9th diode with Single-phase load connection, the midpoint of the 6th diode and the 8th diode connect the collector of the first IGBT pipe, the 7th diode and The midpoint of 9th diode, which is connected as the signal output end of power control circuit with the emitter of the first IGBT pipe, connect power supply The cathode output end of circuit, the signal input part and gate driving circuit of the grid of the first IGBT pipe as power control circuit Signal output end is connected.
8. according to claim 1 to a kind of bearing power by MOS type device frequency conversion drive described in any one of 3,5 to 7 Adjustment circuit, it is characterised in that: the single-phase load includes incandescent lamp, motor, resistance wire and LED light group.
9. a kind of bearing power adjustment circuit by MOS type device frequency conversion drive according to claim 4, feature exist In: the single-phase load includes incandescent lamp, motor, resistance wire and LED light group.
CN201910310814.8A 2019-04-18 2019-04-18 Load power adjusting circuit driven by MOS type device in variable frequency mode Active CN110061722B (en)

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CN112217429A (en) * 2020-09-29 2021-01-12 西安微电子技术研究所 Brushless motor driving circuit and method
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CN113872775B (en) * 2021-09-28 2023-11-21 华勤技术股份有限公司 Power supply circuit and power receiving end device

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