CN110060932A - Lanthanum aluminate/strontium titanates hetero-junctions and preparation method thereof - Google Patents
Lanthanum aluminate/strontium titanates hetero-junctions and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 18
- -1 Lanthanum aluminate Chemical class 0.000 title description 4
- 229910052746 lanthanum Inorganic materials 0.000 title description 4
- 229910052712 strontium Inorganic materials 0.000 title description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 title description 4
- 229910002244 LaAlO3 Inorganic materials 0.000 claims abstract description 72
- 229910002370 SrTiO3 Inorganic materials 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000407 epitaxy Methods 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- Computer Hardware Design (AREA)
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- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
The invention discloses a kind of LaAlO3/SrTiO3Hetero-junctions and preparation method thereof, the LaAlO3/SrTiO3Hetero-junctions has SrTiO3Substrate layer, internal layer LaAlO3Epitaxial layer, outer layer LaAlO3Epitaxial layer；The LaAlO3/SrTiO3Hetero-junctions is prepared using following two steps epitaxy: internal layer LaAlO3Epitaxial layer and outer layer LaAlO3Epitaxial layer is to set laser molecular beam epitaxial device temperature as 700~900 DEG C, and heating rate is 20~60 DEG C/min, and oxygen atmosphere pressure is 10‑8~10‑1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz, SrTiO3Substrate is from LaAlO3The distance of target is 2~15cm, and internal layer or outer layer LaAlO is prepared3After epitaxial layer, room temperature is down to 10~40 DEG C/min rate.The LaAlO of the method for the present invention preparation3/SrTiO3Hetero-junctions has high carrier concentration (≤1014cm‑2), high mobility (≤104cm2/ Vs) the features such as, conventional semiconductor material can be replaced to meet the use of the electronic devices such as transistor and spintronic devices.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to one kind has high carrier concentration and high electron mobility
LaAlO3/SrTiO3Hetero-junctions and preparation method thereof.
Background technique
LaAlO3(LAO, lanthanum aluminate) and SrTiO3(STO, strontium titanates) is the broad stopband insulator of perovskite structure, LAO
For polar material, STO is non-polar material, since the polarization of the interface both LAO and STO is discontinuous, observed interface and leads
It is electrically two-dimensional electron gas phenomenon.By the control technique to interface electronics, using different preparation processes, it is expected to obtain substantially
Spend the LaAlO of the carrier concentration and electron mobility that are promoted3/SrTiO3Hetero-junctions is that transistor and spintronic devices etc. are electric
The application of sub- device lays the foundation.
The LaAlO usually reported3/SrTiO3Hetero-junctions, the electron mobility in its interface are~103 cm2/ Vs is carried
Flowing sub- concentration is 1013~1014cm-2.In order to promote the electron mobility at interface, people use different technique, including control
Defect scattering, granule surface contral, doping regulation, even remove preparation LAO epitaxial layer using the growth technique of different parameters, although this
A little techniques improve electron mobility to a certain extent, but up to the present, and the electron mobility of highest report is still only
104cm2/ Vs, however its carrier concentration is generally lower, only 1012~1013cm-2, it is difficult to meet transistor and electron spin
The application of the electronic devices such as device.
Summary of the invention
LaAlO is prepared the purpose of the present invention is to provide a kind of3/SrTiO3The method of (lanthanum aluminate/strontium titanates) hetero-junctions,
The method is that two step epitaxys prepare LaAlO3Epitaxial layer specifically comprises the following steps:
Step S1 is to SrTiO3Substrate is cleaned by ultrasonic and is pre-processed；
Step S2 prepares internal layer LaAlO3Epitaxial layer, internal layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, specific item
Part is to set laser molecular beam epitaxial device temperature as 700~900 DEG C, and heating rate is 20~60 DEG C/min, oxygen atmosphere confining pressure
Power is 10-8~10-1Torr, laser energy are 0.8~2.5 J/cm2, laser frequency is 1~10Hz, SrTiO3Substrate from
LaAlO3The distance of target is 2~15cm, and internal layer LaAlO is prepared3After epitaxial layer, room is down to 10~40 DEG C/min rate
Temperature；
Step S3 prepares outer layer LaAlO3Epitaxial layer, outer layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, specific item
Part is to set laser molecular beam epitaxial device temperature as 700~900 DEG C, and heating rate is 20~60 DEG C/min preferably 30~50
DEG C/min, oxygen atmosphere pressure is 10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz,
The SrTiO that step S2 is obtained3Substrate is from LaAlO3The distance of target is 2~15cm, and outer layer LaAlO is prepared3After epitaxial layer,
It is down to room temperature with 10~40 DEG C/min rate, finally obtains LaAlO3/SrTiO3Hetero-junctions.
The LaAlO that two step epitaxys of the invention obtain3/SrTiO3There is hetero-junctions high carrier concentration and high electronics to move
Coefficient is moved, two step epitaxy simple processes have originality, can replace conventional preparation method, meet the electricity such as transistor
The use in sub- device semiconductor field.
In step S1, the SrTiO3The crystalline orientation of substrate is (100) or (111) or (110)； SrTiO3Substrate table
Face is cleaned by ultrasonic 5~10 minutes with isopropanol solvent, until surface is clean, noresidue.
In step S1, pretreatment specifically: by the SrTiO after ultrasonic cleaning3Substrate is put into laser molecular beam epitaxial device,
In 700 DEG C~900 DEG C preferably 850 DEG C preferred 30min of 10~60min of pretreatment.
LaAlO3The overall thickness of epitaxial layer is 2nm~0.1 μm.Internal layer LaAlO of the invention3The thickness and outer layer of epitaxial layer
LaAlO3The thickness of epitaxial layer can be 20~80%:80%~20%, preferably 50%:50%.
Step S2 prepares internal layer LaAlO3Epitaxial layer and step S3 prepare outer layer LaAlO3In epitaxial layer, laser molecular is set
Beam epitaxy device temperature is 850 DEG C, and heating rate is 30~50 DEG C/min, and oxygen atmosphere pressure is 10-5~10-3Torr, laser
Energy is 1.2~2.0J/cm2, laser frequency is 2~5Hz, SrTiO3Substrate is from LaAlO3The distance of target is 5~10cm, system
It is standby to obtain LaAlO3After epitaxial layer, room temperature is down to 20~30 DEG C/min rate.
Another object of the present invention is to provide a kind of LaAlO3/SrTiO3Hetero-junctions, the LaAlO3/SrTiO3It is heterogeneous
Knot has SrTiO3Substrate layer and be located at the SrTiO3LaAlO on substrate layer3Epitaxial layer, the LaAlO3Epitaxial layer is by position
In the SrTiO3Internal layer LaAlO on substrate layer3Epitaxial layer and be located at the internal layer LaAlO3Outer layer on epitaxial layer
LaAlO3Epitaxial layer composition；LaAlO of the present invention3/SrTiO3The LaAlO of hetero-junctions3The overall thickness of epitaxial layer is 2nm~0.1 μm；
The LaAlO3/SrTiO3Hetero-junctions is prepared using following two steps epitaxy:
Step S1 is to SrTiO3Substrate is cleaned by ultrasonic and is pre-processed；
Step S2 prepares internal layer LaAlO3Epitaxial layer, internal layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, specific item
Part is to set laser molecular beam epitaxial device temperature as 700~900 DEG C, and heating rate is 20~60 DEG C/min, oxygen atmosphere confining pressure
Power is 10-8~10-1Torr, laser energy are 0.8~2.5 J/cm2, laser frequency is 1~10Hz, SrTiO3Substrate from
LaAlO3The distance of target is 2~15cm, and internal layer LaAlO is prepared3After epitaxial layer, room is down to 10~40 DEG C/min rate
Temperature；
Step S3 prepares outer layer LaAlO3Epitaxial layer, outer layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, specific item
Part is to set laser molecular beam epitaxial device temperature as 700~900 DEG C, and heating rate is 20~60 DEG C/min preferably 30~50
DEG C/min, oxygen atmosphere pressure is 10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz,
The SrTiO that step S2 is obtained3Substrate is from LaAlO3The distance of target is 2~15cm, and outer layer LaAlO is prepared3After epitaxial layer,
It is down to room temperature with 10~40 DEG C/min rate, finally obtains LaAlO3/SrTiO3Hetero-junctions.
The positive effect of the present invention is that: the LaAlO that two step epitaxys of the invention obtain3/ SrTiO3Hetero-junctions
Interface have the characteristics that high carrier concentration and high electron mobility coefficient.The LaAlO of the method for the present invention preparation3/SrTiO3It is different
Matter knot, the high carrier concentration and high electron mobility coefficient that interface has are respectively >=1014cm-2He≤104cm2/ Vs, can
It is expected to the features such as meeting the use in the electronic devices semiconductor field such as transistor.
Detailed description of the invention
Fig. 1 is the LaAlO that comparative example 1 is prepared through conventional method3/SrTiO3The carrier concentration and electronics of hetero-junctions
The curve graph of mobility.Abscissa is temperature, and unit is DEG C that ordinate is respectively that carrier concentration unit is cm-2, electron transfer
Rate unit is cm2/Vs。
Fig. 2 is the LaAlO that embodiment 1 is obtained through two step epitaxys preparation reason of the invention3/SrTiO3Hetero-junctions is powerful
Electron microstructure transmission plot.
Fig. 3 is the LaAlO that embodiment 1 is obtained by two step epitaxys preparation reason of the invention3/SrTiO3The current-carrying of hetero-junctions
The curve graph of sub- concentration and electron mobility.Abscissa is temperature, and unit is DEG C that ordinate is respectively that carrier concentration unit is
cm-2, electron mobility unit is cm2/Vs。
Fig. 4 is the LaAlO that embodiment 2 is obtained by two step epitaxys preparation reason of the invention3/SrTiO3The current-carrying of hetero-junctions
The curve graph of sub- concentration and electron mobility.Abscissa is temperature, and unit is DEG C that ordinate is respectively that carrier concentration unit is
cm-2, electron mobility unit is cm2/Vs。
Fig. 5 is the LaAlO that embodiment 3 is obtained by two step epitaxys preparation reason of the invention3/SrTiO3The current-carrying of hetero-junctions
The curve graph of sub- concentration and electron mobility.Abscissa is temperature, and unit is DEG C that ordinate is respectively that carrier concentration unit is
cm-2, electron mobility unit is cm2/Vs。
Specific embodiment
Comparative example 1
The selection of substrate material: the substrate used is SrTiO3Substrate, and the crystalline orientation of substrate is (100), substrate
Surface is cleaned by ultrasonic 5~10 minutes with isopropanol solvent.
The pretreatment of substrate: placing the substrate into laser molecular beam epitaxial device, controlled at 700 DEG C~900 DEG C, oxygen
Atmosphere pressure is 10-8Torr~10-1Torr, time are 10~60min, carry out the pretreatment of substrate, it is remaining to remove substrate surface
Organic matter.
Preparation LAO epitaxial layer: set first specific preparation condition as temperature be 700 DEG C~900 DEG C, heating rate 20
DEG C/min~60 DEG C/min, oxygen atmosphere pressure is 10-8Torr~10-1Torr, laser energy 0.8J/cm2~2.5J/cm2,
Laser frequency is 1Hz-10Hz, distance preferably 2~15cm of substrate off-target material, and it is primary directly to pass through laser molecular beam epitaxy
Property preparation with a thickness of 2nm~0.1 μm LaAlO3Epitaxial layer, rate of temperature fall are 10 DEG C/min~40 DEG C/min.
As shown in Figure 1, the LaAlO being prepared for comparative example 1 through conventional method3/SrTiO3The carrier concentration of hetero-junctions
With the curve graph of electron mobility.As shown in the figure, with the variation of temperature, its interface electron mobility up to~
103cm2/ Vs, carrier concentration are 2.7 × 1013cm-2。
Examples 1 to 3
The selection of substrate material: the substrate used is SrTiO3Substrate, and the crystalline orientation of substrate is (100), substrate
Surface needs to be cleaned by ultrasonic t0 minutes with isopropanol solvent.
The pretreatment of substrate: placing the substrate into laser molecular beam epitaxial device, controlled at T1, heating rate V1,
Oxygen atmosphere pressure is P1, time t1, carries out the pretreatment of substrate, removes the organic matter of substrate surface remnants.
LAO epitaxial layer is prepared using two step epitaxys.Set first preparation condition as temperature be T2, heating rate V2,
Oxygen atmosphere pressure is P2, laser energy W2, laser frequency F2, the distance d2 of substrate off-target material, rate of temperature fall V3.System
The internal layer LaAlO of standby thickness D13Then epitaxial layer is down to room temperature.Then according to internal layer LaAlO3It is prepared by the parameter setting of epitaxial layer
Outer layer LaAlO3The parameter of epitaxial layer prepares the outer layer LaAlO of thickness D2 according to same condition3Epitaxial layer is finally cooled to room
Temperature.LaAlO of the invention is obtained3/SrTiO3Hetero-junctions.
The technological parameter of 1 Examples 1 to 3 of table
As shown in Fig. 2, the LaAlO being prepared for embodiment 1 through two step epitaxys3/SrTiO3The electron microscopic of hetero-junctions
Structure transmission plot has understood and has shown the LAO epitaxial layer of the controllable thickness through laser molecular beam epitaxy preparation.
As shown in figure 3, the LaAlO being prepared for embodiment 1 through two step epitaxys3/SrTiO3The carrier of hetero-junctions is dense
The curve graph of degree and electron mobility.As shown in the figure, with the variation of temperature, its interface electron mobility up to~
3.8×104cm2/ Vs, carrier concentration are~4.14 × 1014cm-2。
As shown in figure 4, the LaAlO being prepared for embodiment 2 through two step epitaxys3/SrTiO3The carrier of hetero-junctions is dense
The curve graph of degree and electron mobility.As shown in the figure, with the variation of temperature, its interface electron mobility up to~
3.0×104cm2/ Vs, carrier concentration are~2.4 × 1014cm-2。
As shown in figure 5, the LaAlO being prepared for embodiment 3 through two step epitaxys3/SrTiO3The carrier of hetero-junctions is dense
The curve graph of degree and electron mobility.As shown in the figure, with the variation of temperature, its interface electron mobility up to~
2.8×104cm2/ Vs, carrier concentration are 1.3 × 1015cm-2。
Claims (9)
1. a kind of prepare LaAlO3/SrTiO3The method of hetero-junctions, it is characterised in that
The method is that two step epitaxys prepare LaAlO3Epitaxial layer specifically comprises the following steps:
Step S1 is to SrTiO3Substrate is cleaned by ultrasonic and is pre-processed；
Step S2 prepares internal layer LaAlO3Epitaxial layer, internal layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, actual conditions are
Laser molecular beam epitaxial device temperature is set as 700~900 DEG C, heating rate is 20~60 DEG C/min, and oxygen atmosphere pressure is
10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz, SrTiO3Substrate is from LaAlO3Target
Distance be 2~15cm, internal layer LaAlO is prepared3After epitaxial layer, room temperature is down to 10~40 DEG C/min rate；
Step S3 prepares outer layer LaAlO3Epitaxial layer, outer layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, actual conditions are
Laser molecular beam epitaxial device temperature is set as 700~900 DEG C, heating rate be preferably 30~50 DEG C of 20~60 DEG C/min/
Min, oxygen atmosphere pressure are 10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz, step
The SrTiO that S2 is obtained3Substrate is from LaAlO3The distance of target is 2~15cm, and outer layer LaAlO is prepared3After epitaxial layer, with 10
~40 DEG C/min rate is down to room temperature, finally obtains LaAlO3/SrTiO3Hetero-junctions.
2. according to the method described in claim 1, it is characterized by: in step S1, the SrTiO3The crystalline orientation of substrate is
(100) or (111) or (110)；SrTiO3Substrate surface is cleaned by ultrasonic 5~10 minutes with isopropanol solvent, until surface it is clean,
Noresidue.
3. according to the method described in claim 1, it is characterized by: being pre-processed specifically: after ultrasonic cleaning in step S1
SrTiO3Substrate is put into laser molecular beam epitaxial device, preferred in 700 DEG C~900 DEG C preferably 850 DEG C 10~60min of pretreatment
30min。
4. according to the method described in claim 1, it is characterized by: LaAlO3The overall thickness of epitaxial layer is 2nm~0.1 μm；Internal layer
LaAlO3The thickness and outer layer LaAlO of epitaxial layer3The thickness ratio of epitaxial layer be 20~80%:80%~20%, preferably 50%:
50%.
5. according to the method described in claim 1, it is characterized by: step S2 prepares internal layer LaAlO3Epitaxial layer and step S3 system
Standby outer layer LaAlO3In epitaxial layer, laser molecular beam epitaxial device temperature is set as 850 DEG C, heating rate is 30~50 DEG C/
Min, oxygen atmosphere pressure are 10-5~10-3Torr, laser energy are 1.2~2.0J/cm2, laser frequency is 2~5Hz,
SrTiO3Substrate is from LaAlO3The distance of target is 5~10cm, and LaAlO is prepared3After epitaxial layer, with 20~30 DEG C/min speed
Rate is down to room temperature.
6. a kind of LaAlO3/SrTiO3Hetero-junctions, the LaAlO3/SrTiO3Hetero-junctions has SrTiO3Substrate layer and it is located at described
SrTiO3LaAlO on substrate layer3Epitaxial layer, it is characterised in that: the LaAlO3Epitaxial layer is by being located at the SrTiO3Substrate layer
On internal layer LaAlO3Epitaxial layer and be located at the internal layer LaAlO3Outer layer LaAlO on epitaxial layer3Epitaxial layer composition；It is described
LaAlO3The overall thickness of epitaxial layer is 2nm~0.1 μm, internal layer LaAlO3The thickness and outer layer LaAlO of epitaxial layer3The thickness of epitaxial layer
Degree is than being 20~80%:80%~20%, preferably 50%:50%；
The LaAlO3/SrTiO3Hetero-junctions is prepared using following two steps epitaxy:
Step S1 is to SrTiO3Substrate is cleaned by ultrasonic and is pre-processed；
Step S2 prepares internal layer LaAlO3Epitaxial layer, internal layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, actual conditions are
Laser molecular beam epitaxial device temperature is set as 700~900 DEG C, heating rate is 20~60 DEG C/min, and oxygen atmosphere pressure is
10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz, SrTiO3Substrate is from LaAlO3Target
Distance be 2~15cm, internal layer LaAlO is prepared3After epitaxial layer, room temperature is down to 10~40 DEG C/min rate；
Step S3 prepares outer layer LaAlO3Epitaxial layer, outer layer LaAlO3Epitaxial layer with a thickness of 1nm~0.05 μm, actual conditions are
Laser molecular beam epitaxial device temperature is set as 700~900 DEG C, heating rate be preferably 30~50 DEG C of 20~60 DEG C/min/
Min, oxygen atmosphere pressure are 10-8~10-1Torr, laser energy are 0.8~2.5J/cm2, laser frequency is 1~10Hz, step
The SrTiO that S2 is obtained3Substrate is from LaAlO3The distance of target is 2~15cm, and outer layer LaAlO is prepared3After epitaxial layer, with 10
~40 DEG C/min rate is down to room temperature, finally obtains LaAlO3/SrTiO3Hetero-junctions.
7. LaAlO according to claim 63/SrTiO3Hetero-junctions, it is characterised in that: in step S1, the SrTiO3Lining
The crystalline orientation at bottom is (100) or (111) or (110)；SrTiO3Substrate surface is cleaned by ultrasonic 5~10 points with isopropanol solvent
Clock, until surface is clean, noresidue.
8. LaAlO according to claim 63/SrTiO3Hetero-junctions, it is characterised in that: in step S1, pretreatment specifically:
By the SrTiO after ultrasonic cleaning3Substrate is put into laser molecular beam epitaxial device, in 700 DEG C~900 DEG C preferably 850 DEG C pretreatments
The preferred 30min of 10~60min.
9. LaAlO according to claim 63/SrTiO3Hetero-junctions, it is characterised in that: step S2 prepares internal layer LaAlO3Outside
Prolong layer and step S3 prepares outer layer LaAlO3In epitaxial layer, laser molecular beam epitaxial device temperature is set as 850 DEG C, heating rate
For 30~50 DEG C/min, oxygen atmosphere pressure is 10-5~10-3Torr, laser energy are 1.2~2.0J/cm2, laser frequency 2
~5Hz, SrTiO3Substrate is from LaAlO3The distance of target is 5~10cm, and LaAlO is prepared3After epitaxial layer, with 20~30 DEG C/
Min rate is down to room temperature.
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| CN1725444A (en) * | 2004-07-20 | 2006-01-25 | 中国科学院物理研究所 | Epitaxial growing lanthanum aluminate film material and preparation method on silicon substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594025A (en) * | 2021-06-11 | 2021-11-02 | 河北大学 | Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application |
| CN113594025B (en) * | 2021-06-11 | 2023-07-28 | 河北大学 | Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application |
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