CN110058491A - Photoresist and display panel - Google Patents

Photoresist and display panel Download PDF

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Publication number
CN110058491A
CN110058491A CN201910320458.8A CN201910320458A CN110058491A CN 110058491 A CN110058491 A CN 110058491A CN 201910320458 A CN201910320458 A CN 201910320458A CN 110058491 A CN110058491 A CN 110058491A
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CN
China
Prior art keywords
photoresist
absorption particle
particle
duv
euv
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910320458.8A
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Chinese (zh)
Inventor
刘国和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201910320458.8A priority Critical patent/CN110058491A/en
Publication of CN110058491A publication Critical patent/CN110058491A/en
Priority to PCT/CN2019/101904 priority patent/WO2020211232A1/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention provides a kind of photoresist and display panel.Photoresist of the invention includes resin, emulsion, polymer monomer, solvent and UV Absorption particle, the UV Absorption particle is used to absorb the ultraviolet light injected in the photoresist, by introducing UV Absorption particle in the photoresist, part DUV and EUV ultraviolet light can be absorbed respectively in the DUV board cleaning processing procedure and EUV board cleaning processing procedure of display panel, to reduce destruction of the DUV/EUV ultraviolet light to photoresist, reduce influence of the DUV/EUV board cleaning processing procedure to Other substrate materials film layer in display panel, inhibit the generation of Other substrate materials film layer emergent gas, and then reduce the ion concentration in LCD panel liquid crystal layer, improve the display quality of LCD.

Description

Photoresist and display panel
Technical field
The present invention relates to field of display technology more particularly to a kind of photoresists and display panel.
Background technique
Thin-film transistor LCD device (Thin Film Transistor Liquid Crystal Display, TFT-LCD) there are many merits such as thin fuselage, power saving, radiationless, be widely used.Liquid crystal on existing market Showing device is largely backlight liquid crystal display device comprising liquid crystal display panel and backlight module (backlight module).Usual liquid crystal display panel by color film (Color Filter, CF) substrate, tft array substrate, be sandwiched in color membrane substrates Liquid crystal (Liquid Crystal, LC) and the sealing frame glue'' (Sealant) composition between tft array substrate.CF substrate is LCD For realizing the main devices of colored display, constitute and generally include substantially: glass substrate, black matrix" (Black Matrix, BM), chromatic filter layer etc..Wherein, chromatic filter layer is mainly and passes through chromatic photoresist to achieve the effect that colored display, backlight The light of sending is incident on CF substrate by the modulation of liquid crystal molecule, is enameled red (R) photoresist, green of filter layer by CF substrate The filter action of color (G) photoresist and blue (B) photoresist shows three kinds of light of red, green, blue, the photoresist point of different colours respectively The light of other TEM investigation color bands, to realize the colored display of display.
The photoresist raw material important as TFT-LCD industry is widely used in the production of modern panel, such as CF substrate-side Black matrix", the resistance of chromatic filter layer RGB color, organic coating layer (over coat, OC) and spacer (photo spacer, PS) Deng the organic insulation flatness layer (Polymer Film on Array, PFA) etc. of tft array substrate side for another example.This kind of photoresist Material can be used as direct material and retain in the panel, thus the stability of such material is such as: heat resistance, resistant to chemical etching Property, light shine etc. are particularly important to panel quality.
In TFT-LCD processing procedure, the cleanliness of substrate has vital influence to the yield of panel and quality.It is dark purple The ultraviolet light of outer light (Deep Ultraviolet, DUV) or extreme ultraviolet (Extreme Ultraviolet, EUV) cleans conduct The most effectual way of removal organic polluter is gone to be widely used in the board cleaning technique of TFT-LCD.DUV or EUV ultraviolet light Clean principle is: the change of the solvent or organic matter that remain on substrate is interrupted using the ultraviolet light of the wave band of 254nm or 172nm Key is learned, so that the oligomer for resolving into gas removal or it is made to resolve into small-molecular-weight residual organic matter charing, then matches again The cleaning such as lye or chemical liquid is closed, the organic substance residues on substrate are finally completely removed.
DUV or EUV cleaning as removal substrate organic substance residues most efficient method, wavelength respectively correspond 254nm and 172nm, photon energy are enough to interrupt most of chemical bonds in photoetching gum resin, such as common acrylic tree in photoresist Rouge, to make acryl resin that scission of link occur or decompose to generate emergent gas (outgas).And decompose outgas pairs generated It is totally unfavorable factor for TFT-LCD, there are two main influences: (1) after CF substrate and tft array substrate are assembled into box Outgas is slowly escaped, and is rushed in liquid crystal and is generated liquid crystal bubbles (bubble);(2) the outgas contaminated liquid in liquid crystal is rushed in Crystalline substance, ion concentration promotion causes image retention (image sticking) to occur, to influence TFT-LCD display quality.
Summary of the invention
The purpose of the present invention is to provide a kind of photoresists, can reduce DUV/EUV board cleaning processing procedure in display panel The influence of Other substrate materials film layer inhibits the generation of Other substrate materials film layer emergent gas.
The object of the invention is also to provide a kind of display panels, can reduce DUV/EUV board cleaning processing procedure to display surface The influence of Other substrate materials film layer in plate inhibits the generation of Other substrate materials film layer emergent gas.
To achieve the above object, the present invention provides a kind of photoresists, including resin, emulsion, polymer monomer, solvent And UV Absorption particle, the UV Absorption particle are used to absorb the ultraviolet light injected in the photoresist.
The UV Absorption particle is inorganic matter nano particle;The forbidden bandwidth of the UV Absorption particle is 4.5- 8.5ev。
The UV Absorption particle includes SiO2Nano particle, GeO2Nano particle and Ga2O3One of nano particle Or it is a variety of.
The partial size of the UV Absorption particle is 1-50nm.
Weight percentage of the UV Absorption particle in the photoresist is 0.1%-2%.
The UV Absorption particle is distributed in the photoresist by way of physical blending.
The photoresist is colored photoresist, further includes colorant and dispersing agent, the coloured silk being used to prepare in display panel Color filtering optical layer;
The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist is respectively 80- 90%, 5-8%, 5-8% and 0.2-0.6%.
The colorant is the combination of pigment, dyestuff or both.
The photoresist is transparent photomask glue, is used to prepare array substrate side organic insulator;
The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist is respectively 80- 85%, 10-15%, 5-8% and 2-5%.
The present invention also provides a kind of display panel, including photoresist film layer, the photoresist film layer is by light as described above Photoresist is prepared.
Beneficial effects of the present invention: photoresist of the invention, including resin, emulsion, polymer monomer, solvent and purple Outer light absorption particle, the UV Absorption particle are used to absorb the ultraviolet light injected in the photoresist, by UV Absorption particle is introduced in photoresist, it can be in the DUV board cleaning processing procedure and EUV board cleaning processing procedure of display panel Part DUV and EUV ultraviolet light is absorbed respectively, to reduce destruction of the DUV/EUV ultraviolet light to photoresist, reduces DUV/EUV base Plate cleans influence of the processing procedure to Other substrate materials film layer in display panel, inhibits the generation of Other substrate materials film layer emergent gas, And then the ion concentration in LCD panel liquid crystal layer is reduced, improve the display quality of LCD.Display panel of the invention, including by upper The photoresist film layer that photoresist is prepared is stated, can effectively reduce DUV/EUV board cleaning processing procedure to photoresist in display panel The influence of film layer inhibits the generation of Other substrate materials film layer emergent gas, and then reduces the ion in LCD panel liquid crystal layer Concentration improves the display quality of LCD.
Detailed description of the invention
With reference to the accompanying drawing, by the way that detailed description of specific embodiments of the present invention, technical solution of the present invention will be made And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is the structural schematic diagram of one preferred embodiment of display panel of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention Example is described in detail.
Present invention firstly provides a kind of photoresists, including resin, emulsion, polymer monomer, solvent and at least one UV Absorption particle, the UV Absorption particle are used to absorb the ultraviolet light injected in the photoresist.
Specifically, the UV Absorption particle is inorganic matter nano particle;The forbidden band of the UV Absorption particle is wide Degree is 4.5-8.5ev.
Specifically, the UV Absorption particle can be selected from SiO2(silica) nano particle, GeO2(germanium oxide) nanometer Grain, Ga2O3(calcium oxide) nano particle and other nano particles etc. with UV Absorption property, wherein SiO2Nano particle, GeO2Nano particle, Ga2O3Forbidden bandwidth corresponding to nano particle respectively may be about 8ev, 5.04ev and 4.9ev.
Specifically, the partial size of the UV Absorption particle is 1-50nm.
Specifically, weight percentage of the UV Absorption particle in the photoresist is 0.1%-2%.
Specifically, the UV Absorption particle is distributed in the photoresist by way of physical blending.
Specifically, the photoresist can be colourama photoresist, further include colorant and dispersing agent, be used to prepare colour Filter layer;The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist is respectively 80- 90%, 5-8%, 5-8% and 0.2-0.6%;Wherein, the colorant is the combination of pigment, dyestuff or both.
Alternatively, the photoresist may be transparent photomask glue, it is used to prepare array substrate side organic insulator (PFA);The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist is respectively 80- 85%, 10-15%, 5-8% and 2-5%.
Photoresist of the invention, including resin, emulsion, polymer monomer, solvent and UV Absorption particle, it is described UV Absorption particle is used to absorb the ultraviolet light injected in the photoresist, by introducing ultraviolet light in the photoresist Absorbing particle, can be absorbed respectively in the DUV board cleaning processing procedure and EUV board cleaning processing procedure of display panel part DUV and EUV ultraviolet light reduces DUV/EUV board cleaning processing procedure to display surface to reduce destruction of the DUV/EUV ultraviolet light to photoresist The influence of Other substrate materials film layer in plate inhibits the generation of Other substrate materials film layer emergent gas, and then reduces LCD panel liquid crystal Ion concentration in layer, improves the display quality of LCD.
Referring to Fig. 1, based on above-mentioned photoresist, the present invention also provides a kind of display panels, including by above-mentioned photoresist The photoresist film layer of prepared formation.
Fig. 1 is the structural schematic diagram of one preferred embodiment of display panel of the invention, as shown in Figure 1, the present embodiment includes The upper substrate 1 being oppositely arranged and lower substrate 2 and liquid crystal layer 3 and spacer 4 between the upper substrate 1 and lower substrate 2, In, the upper substrate includes the first underlay substrate 11 and the black set on first underlay substrate 11 close to 2 side of lower substrate Matrix 12;The lower substrate 2 is including TFT substrate 21 and is sequentially arranged in colour filter of the TFT substrate 21 close to 1 side of upper substrate Photosphere 22 and organic insulator 23.
Specifically, the chromatic filter layer 22 includes red color resistance layer 221 arranged side by side, green color blocking layer 222 and blue color Resistance layer 223.
Specifically, the organic insulator 23, red color resistance layer 221, green color blocking layer 222 and blue color blocking layer 223 are equal It include the UV Absorption particle 50 for the photoresist film layer.
Specifically, it is used to form the system of the photoresist of red color resistance layer 221, green color blocking layer 222 and blue color blocking layer 223 Standby process is to be pre-mixed colorant, dispersing agent and the UV Absorption particle 50 after surface treatment according to certain proportion, Then circulation stirring and filtering are carried out in stirred tank after the processing of dispersion machine imperceptibility, form evenly dispersed intermediate system Product;By scattered intermediate again with resin, polymer monomer, emulsion, solvent, additive etc. in stirred tank through recycling Stirring is filtered to uniform, is finally respectively formed the evenly dispersed and stable photoresist for being used to form RGB color resistance layer, wherein molten The weight percentage of agent is 80-90%, and the weight percentage of resin is 5-8%, the weight percentage of polymer monomer For 5-8%, the weight percentage of emulsion is 0.2-0.6%, and the weight percentage of UV Absorption particle is 0.1%- 2%, the weight percentage of additive is < 1%.
Specifically, the preparation process for being used to form the photoresist of the organic insulator 23 is, by resin, emulsion, molten Agent, additive and UV Absorption particle circulation stirring, mistake in stirred tank according to a certain percentage after surface treatment Filter is ultimately formed and is stablized and finely dispersed photoresist, wherein the weight percentage of solvent is 80-85%, resin to uniform Weight percentage be 0-15%, the weight percentage 2-5% of emulsion, the weight percentage of UV Absorption particle For 0.1%-2%, the weight percentage of additive is between 0-2%.
Further, the manufacturing process of the present embodiment display panel, specifically comprises the following steps:
Step S1, TFT substrate 21 is provided, forms the red color resistance of the chromatic filter layer 22 in 21 side of TFT substrate Layer 221.
Step S2, DUV cleaning treatment or EUV cleaning treatment are carried out to TFT substrate 21, due to being radiated at red color resistance layer DUV (254nm) or EUV (172nm) ultraviolet light on 221 can be by 50 parts of UV Absorption particle in red color resistance layer 221 It absorbs, damage is generated to the resin in the red color resistance layer 221 on substrate and is caused to can effectively reduce DUV/EUV ultraviolet light Scission of link;Then the green color blocking layer 222 of the chromatic filter layer 22 is formed in 21 side of TFT substrate.
Step S3, DUV cleaning treatment or EUV cleaning treatment are carried out to TFT substrate 21, at this time red color resistance layer 221 and green UV Absorption particle 50 in color color blocking layer 222 can absorb part short wave ultraviolet light, so that it is ultraviolet to can effectively reduce DUV/EUV Light generates damage to the resin in the red color resistance layer 221 and green color blocking layer 222 on substrate;Then in the TFT substrate 21 Side forms the blue color blocking layer 223 of the chromatic filter layer 22, obtains the chromatic filter layer 22.
Step S4, DUV cleaning treatment or EUV cleaning treatment, during cleaning, red color resistance layer are carried out to TFT substrate 21 221, the UV Absorption particle 50 in green color blocking layer 222 and blue color blocking layer 223 can absorb part short wave ultraviolet light, thus DUV/EUV ultraviolet light be can effectively reduce in red color resistance layer 221, green color blocking layer 222 and the blue color blocking layer 223 on substrate Resin generate damage, so that the generation of photoresist emergent gas is reduced on the whole, then in the TFT substrate 21 and colored filter The organic insulator 23 is formed on photosphere 22, obtains the lower substrate 2.
Step S5, it provides the upper substrate 1 and lower substrate 2 and 1 pair of composition box of upper substrate is obtained into display panel.
Display panel of the invention, including photoresist film layer, the photoresist film layer contain UV Absorption particle 50, can have Effect reduces influence of the DUV/EUV board cleaning processing procedure to Other substrate materials film layer in display panel, inhibits Other substrate materials film layer The generation of emergent gas, and then the ion concentration in LCD panel liquid crystal layer is reduced, improve the display quality of LCD.
In conclusion photoresist of the invention, including resin, emulsion, polymer monomer, solvent and UV Absorption Particle, the UV Absorption particle is used to absorb the ultraviolet light injected in the photoresist, by the photoresist UV Absorption particle is introduced, can be absorbed respectively in the DUV board cleaning processing procedure and EUV board cleaning processing procedure of display panel Part DUV and EUV ultraviolet light reduces DUV/EUV board cleaning system to reduce destruction of the DUV/EUV ultraviolet light to photoresist Influence of the journey to Other substrate materials film layer in display panel inhibits the generation of Other substrate materials film layer emergent gas, and then reduces Ion concentration in LCD panel liquid crystal layer improves the display quality of LCD.Display panel of the invention, including by above-mentioned photoresist The photoresist film layer being prepared can effectively reduce DUV/EUV board cleaning processing procedure to Other substrate materials film layer in display panel Influence, inhibit Other substrate materials film layer emergent gas generation, and then reduce LCD panel liquid crystal layer in ion concentration, change The display quality of kind LCD.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention Protection scope.

Claims (10)

1. a kind of photoresist, which is characterized in that including resin, emulsion, polymer monomer, solvent and UV Absorption grain Son, the UV Absorption particle are used to absorb the ultraviolet light injected in the photoresist.
2. photoresist as described in claim 1, which is characterized in that the UV Absorption particle is inorganic matter nano particle; The forbidden bandwidth of the UV Absorption particle is 4.5-8.5ev.
3. photoresist as claimed in claim 2, which is characterized in that the UV Absorption particle includes SiO2Nano particle, GeO2Nano particle and Ga2O3One of nano particle is a variety of.
4. photoresist as described in claim 1, which is characterized in that the partial size of the UV Absorption particle is 1-50nm.
5. photoresist as described in claim 1, which is characterized in that weight of the UV Absorption particle in the photoresist Amount percentage composition is 0.1%-2%.
6. photoresist as described in claim 1, which is characterized in that the UV Absorption particle is by way of physical blending It is distributed in the photoresist.
7. photoresist as described in claim 1, which is characterized in that for colored photoresist, further include colorant and dispersing agent, use In preparing chromatic filter layer;
The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist be respectively 80-90%, 5-8%, 5-8% and 0.2-0.6%.
8. photoresist as claimed in claim 7, which is characterized in that the colorant is the combination of pigment, dyestuff or both.
9. photoresist as described in claim 1, which is characterized in that be transparent photomask glue, it is organic to be used to prepare array substrate side Insulating layer;
The weight percentage of the solvent, resin, polymer monomer, emulsion in the photoresist be respectively 80-85%, 10-15%, 5-8% and 2-5%.
10. a kind of display panel, which is characterized in that including photoresist film layer, the photoresist film layer is by such as claim 1-9 Described in any item photoresists are prepared.
CN201910320458.8A 2019-04-19 2019-04-19 Photoresist and display panel Pending CN110058491A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910320458.8A CN110058491A (en) 2019-04-19 2019-04-19 Photoresist and display panel
PCT/CN2019/101904 WO2020211232A1 (en) 2019-04-19 2019-08-22 Photoresist and display panel

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Application Number Priority Date Filing Date Title
CN201910320458.8A CN110058491A (en) 2019-04-19 2019-04-19 Photoresist and display panel

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CN110058491A true CN110058491A (en) 2019-07-26

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WO (1) WO2020211232A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020211232A1 (en) * 2019-04-19 2020-10-22 深圳市华星光电技术有限公司 Photoresist and display panel
WO2021017298A1 (en) * 2019-07-31 2021-02-04 Tcl华星光电技术有限公司 Display panel and preparation method therefor
CN114333586A (en) * 2021-12-30 2022-04-12 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal

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JP2000284112A (en) * 1999-03-30 2000-10-13 Dainippon Printing Co Ltd Color filter and its production
JP2003268367A (en) * 2002-03-18 2003-09-25 Kasei Optonix Co Ltd Fluorescent substance for forming fluorescent film and slurry thereof
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CN105440933A (en) * 2015-02-15 2016-03-30 广东天安新材料股份有限公司 Electron beam curing coating
CN108885367A (en) * 2016-05-02 2018-11-23 株式会社Lg化学 Polarizer and liquid crystal display including it

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CN110058491A (en) * 2019-04-19 2019-07-26 深圳市华星光电技术有限公司 Photoresist and display panel

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JP2000284112A (en) * 1999-03-30 2000-10-13 Dainippon Printing Co Ltd Color filter and its production
JP2003268367A (en) * 2002-03-18 2003-09-25 Kasei Optonix Co Ltd Fluorescent substance for forming fluorescent film and slurry thereof
CN1760293A (en) * 2004-10-07 2006-04-19 拜尔材料科学股份公司 Hybrid topcoat
CN103270435A (en) * 2010-12-24 2013-08-28 富士胶片株式会社 Photosensitive transparent composition for color filter of solid-tate imaging device, and production method of color filter of solid-<wbr/>state imaging device, color filter of solid-<wbr/>state imaging device, and solid-<wbr/>state imaging device, each using the sam
CN105440933A (en) * 2015-02-15 2016-03-30 广东天安新材料股份有限公司 Electron beam curing coating
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020211232A1 (en) * 2019-04-19 2020-10-22 深圳市华星光电技术有限公司 Photoresist and display panel
WO2021017298A1 (en) * 2019-07-31 2021-02-04 Tcl华星光电技术有限公司 Display panel and preparation method therefor
CN114333586A (en) * 2021-12-30 2022-04-12 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal
WO2023123546A1 (en) * 2021-12-30 2023-07-06 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal

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