CN110057921B - Three-dimensional ultrasonic imaging system - Google Patents

Three-dimensional ultrasonic imaging system Download PDF

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CN110057921B
CN110057921B CN201910290733.6A CN201910290733A CN110057921B CN 110057921 B CN110057921 B CN 110057921B CN 201910290733 A CN201910290733 A CN 201910290733A CN 110057921 B CN110057921 B CN 110057921B
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CN110057921A (en
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黄汐威
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Chengdu Huaxin Micro Medicine Technology Co ltd
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Chengdu Huaxin Micro Medicine Technology Co ltd
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Abstract

The invention provides a three-dimensional ultrasonic imaging system, comprising: two-dimensional CMUT array, analog front end receiving and transmitting module, time gain compensation module and low-pass filterThe module, ADC conversion module, digital signal processing and control module, analog front end transceiver includes: the high-voltage transmitting/receiving isolating switch, the trans-impedance amplifier and the pulse generator; the two-dimensional CMUT array and the array of the analog front-end transceiver module are correspondingly connected through vertical silicon through holes; the transimpedance amplifier includes: a single-ended amplifier and a feedback resistor Rf(ii) a The single-ended amplifier is formed by cascading a common source amplifier MN1 with an N-tube type source follower MN 3. According to the three-dimensional ultrasonic imaging system, the high-frequency trans-impedance amplifier in the analog receiver has the characteristics of low input resistance, high transconductance, high feedback resistance and the like, so that the system has wider frequency bandwidth, the system can work in higher frequency, and the spatial resolution of 3D imaging is higher.

Description

Three-dimensional ultrasonic imaging system
Technical Field
The invention relates to the field of ultrasonic medical imaging, in particular to a three-dimensional ultrasonic imaging system.
Background
With the development of electronic technology and ultrasonic theory, ultrasonic imaging detection equipment has been widely applied in various industries, such as medical imaging diagnosis, submarine landform drawing, resource surveying, industrial nondestructive testing, ultrasonic ranging, underwater sunken ship salvaging, naval vessel identification and other fields. Ultrasonic imaging refers to detecting a target object by using ultrasonic beams, detecting and storing received echo or transmitted wave signals, obtaining information such as a target distance, a contour and an internal structure according to different imaging modes, and finally displaying the information in an image mode. At present, the commonly used scanning type ultrasonic imaging mainly includes a type a display mode (amplitude modulation type), a type B display mode (brightness modulation type), an M type and a D type, and in recent years, with the continuous expansion of the application field of ultrasonic imaging, imaging technologies such as combined phased array ultrasonic imaging, aperture focusing ultrasonic imaging, diffraction time difference method ultrasonic imaging, ultrahigh resolution ultrasonic imaging and the like are developed.
The performance of an ultrasound transducer, which is one of the key components of ultrasound imaging, directly determines the picture quality of the imaging system. The ultrasonic transducer is used as an energy exchange device, the performance of the ultrasonic transducer directly influences the detection performance of a target object and the application field of the transducer, and the ultrasonic transducer has the main functions of: (1) in the transmitting stage: the transducer converts input electric energy into mechanical energy under the action of an excitation signal and transmits the mechanical energy out, so that the transmission of ultrasonic waves is realized; (2) in the receiving stage, the transducer converts acoustic energy into an electric signal, and the reception of ultrasonic waves is realized. The Capacitive micro-machined ultrasonic Transducer (CMUT) detection circuit plays a key role in reading an ultrasonic echo signal, and currently, the detection methods include a charge-discharge detection method, a charge transfer method, a transimpedance amplification detection method, and the like. The charge-discharge method has the advantages that the circuit is simple, the cost is low, the integration can be realized by adopting a CMOS (complementary metal oxide semiconductor) process, the data reading speed is high, and the defects that a direct-current power supply is adopted, the drift problem after amplification is serious, and the measurement effect is influenced are overcome; in the charge transfer method, the charge and discharge of a capacitor are controlled by an electronic switch network, but the electronic switch brings about a charge injection effect, and the influence on a measurement result cannot be completely avoided; the transimpedance amplification detection circuit can eliminate self-oscillation, improve tailing phenomenon, adjust circuit bandwidth and is suitable for high-frequency range.
However, in the existing transimpedance amplification detection circuit, the bandwidth of the transimpedance amplifier (TIA) is mostly concentrated between 5.1MHZ and 25MHZ, so that the received echo signal of the ultrasonic imaging system is weak and the spatial resolution of three-dimensional ultrasonic imaging is low. In addition, because the two-dimensional CMUT array and the array of the analog front-end transceiver module need to be correspondingly connected through the vertical through-silicon vias, a single CMUT device in the current ultrasound imaging system should have the same size as a single analog front-end transceiver module, and the possible sizes of a single CMUT cell and a single analog front-end transceiver module cannot be matched under certain design index requirements, so that the corresponding connection is limited, and the spatial resolution of three-dimensional ultrasound imaging may be reduced.
Disclosure of Invention
The invention aims to: in order to overcome the defects of low spatial resolution of three-dimensional ultrasonic imaging, low amplifier bandwidth, weak received echo signals and the like caused by low working frequency, a three-dimensional ultrasonic imaging system is provided.
A three-dimensional ultrasound imaging system comprising:
a two-dimensional CMUT array which can be reused for receiving or transmitting ultrasonic information;
the analog front end receiving and transmitting module is used for processing ultrasonic information received or generated by the two-dimensional CMUT array;
the time gain compensation module is used for compensating the intensity of the sound wave attenuated along with the distance in the transmission process;
the low-pass filter module is used for filtering unnecessary clutter signals;
the ADC conversion module is used for converting the analog signal into a digital signal;
the digital signal processing and controlling module is used for inputting the converted digital signal to the ultrasonic image processing module for analysis and display;
the analog front end transceiver comprises: the high-voltage transmitting/receiving isolating switch, the trans-impedance amplifier and the pulse generator;
the two-dimensional CMUT array and the array of the analog front-end transceiver module are correspondingly connected through vertical silicon through holes;
the transimpedance amplifier includes: a single-ended amplifier and a feedback resistor Rf(ii) a The single-ended amplifier and a common source amplifier MN1 are cascaded to form an N-tube type source follower MN 3.
Further, in the three-dimensional ultrasonic imaging system as described above, the high voltage transmitting/receiving isolating switch includes: MOS transistor MSW1And MOS transistor MSW2The MOS transistor MSW1And MOS transistor MSW2The source electrodes are connected and then are connected to the input end of the trans-impedance amplifier; MOS transistor MSW1And MOS transistor MSW2Are IN gated connection with respective enable signals RX _ IN _ EN1, RX _ IN _ EN 2; MOS transistor MSW1One end of the drain of the second switch is connected with a CMUT1 cell in the two-dimensional CMUT array, and the other end is connected with the pulse generator 1; MOS transistor MSW2One end of the drain of (a) is connected to the CMUT2 cell in the two-dimensional CMUT array, and the other end is connected to the pulse generator 2.
Further, in the three-dimensional ultrasonic imaging system as described above, the feedback resistor RfIs 1.15K omega, which is directly determined by the transimpedance gain parameter of 61.18dB omega.
Further, as in the three-dimensional ultrasonic imaging system described above, the common source amplifier MN1 is provided with current mirror transistors for supplying bias currents of different magnitudes thereto, and the N-tube type source follower MN3 is provided with current mirror transistors for supplying bias currents of different magnitudes thereto.
Has the advantages that:
according to the three-dimensional ultrasonic imaging system, the high-frequency trans-impedance amplifier in the analog receiver has the characteristics of low input resistance, high transconductance, high feedback resistance and the like, so that the system has wider frequency bandwidth, the system can work in higher frequency, and the spatial resolution of 3D imaging of the system is higher.
In addition, because the two-dimensional CMUT array needs to be connected to the analog front-end transceiver module in an inverted packaging manner, and the size of a single CMUT device is often smaller than that of the analog front-end transceiver module, the invention integrates two CMUT devices in a manner of connecting to one analog front-end transceiver, that is: by adopting the dual-channel input, a single analog front-end transceiver module can be shared by two CMUT devices, so that the size limitation of the two-dimensional CMUT array and the analog front-end transceiver array during flip-chip packaging connection is avoided, and the resolution of a three-dimensional ultrasonic imaging space of the system is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a three-dimensional ultrasonic imaging system according to the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention are described clearly and completely below, and it is obvious that the described embodiments are some, not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a three-dimensional ultrasonic imaging system of the present invention, as shown in fig. 1, the system includes: the device comprises a two-dimensional CMUT array module, an analog front end transceiver module, a time gain compensation module, a low-pass filter module, an ADC module, a digital signal processing and control module and an ultrasonic image processing and display module. The two-dimensional CMUT array module is a parallel plate capacitor consisting of an upper polar plate, a lower polar plate, an insulating layer and a cavity and is used for receiving ultrasonic waves and transmitting the ultrasonic waves; the analog front-end transceiver module comprises a high-voltage transmitting/receiving isolating switch, a high-frequency trans-impedance amplifier and a high-voltage pulse generator; the time gain compensation module is used for compensating the intensity of the sound wave attenuated along with the distance in the transmission process; the low-pass filter module is used for filtering unnecessary clutter signals; in a receiving mode, signals passing through the time gain compensation module and the low-pass filter module enter the ADC conversion module, and the converted digital signals are input to the image analysis module for analysis and display under the action of the digital signal processing and control module. Based on the size ratio limitation of the CMOS analog front-end transceiver module and the CMUT module, the invention integrates two CMUT devices in a mode of connecting one CMOS analog front-end transceiver.
The high-voltage transmitting/receiving isolating switch comprises: MOS transistor MSW1And MOS transistor MSW2The MOS transistor MSW1And MOS transistor MSW2The source electrodes are connected and then are connected to the input end of the trans-impedance amplifier; MOS transistor MSW1And MOS transistor MSW2Are IN gated connection with respective enable signals RX _ IN _ EN1, RX _ IN _ EN 2; MOS transistor MSW1One end of the drain of (a) is connected with a CMUT1 cell of the two-dimensional CMUT array, and the other end is connected with the pulse generator 1; MOS transistor MSW2One end of the drain of (a) is connected to the CMUT2 cell of the two-dimensional CMUT array, and the other end is connected to the pulse generator 2.
The high-voltage protection switch of the analog front-end transceiver is positioned between the high-voltage pulse generator and the high-frequency trans-impedance amplifier, so that the high-frequency trans-impedance amplifier circuit can be isolated to avoid possible breakdown in a transmitting mode, and a single CMUT unit can be selected in an echo receiving mode, so that the single high-frequency trans-impedance amplifier can multiplex and read ultrasonic signals received by the two CMUT units, and the imaging resolution is improved.
The invention utilizes the array of the analog front-end transceiver module and the two-dimensional CMUT array to be flip-chip packaged and integrated, the two-dimensional CMUT array is arranged above the analog front-end transceiver module, the CMOS analog front-end transceiver array is arranged below the analog front-end transceiver module, and the two are correspondingly connected through the vertical silicon through hole. In addition, the high-frequency trans-impedance amplifier is connected below the CMUT unit in a flip chip packaging mode, so that the charge generated by capacitance change of the CMUT can be converted into voltage, and the input resistance is low, the transconductance is high and the feedback resistance is high.
As shown IN fig. 1, the CMOS high frequency transimpedance amplifier circuit includes two input signal paths and one output signal path, the two input signal paths are gated by the high voltage switch MOS transistors (MSW1, MSW2) and the corresponding enable signals RX _ IN _ EN1, RX _ IN _ EN2, respectively, the output signal path is controlled by the OUT _ EN signal, and the high voltage switch MOS transistors (MSW1, MSW2) are connected to and located between the high voltage pulse generator and the high frequency transimpedance amplifier, so that the amplifier circuit can be isolated from possible breakdown IN the transmit mode, and a single CMUT cell can be selected IN the echo receive mode. Each input signal of the trans-impedance amplifier is connected with one CMUT, so that charges generated by capacitance change of the CMUT can be converted into voltage, and the trans-impedance amplifier is low in input resistance, high in transconductance and high in feedback resistance.
The circuit performance of the CMOS high-frequency transimpedance amplifier is determined by the performance of the CMUT device, and in this embodiment, the main performance parameters such as the transimpedance amplifier bandwidth need to reach 52.5MHz, and the transimpedance gain needs to reach 61.18dB Ω. According to the performance requirement, the invention provides a resistance feedback type trans-impedance amplifier structure, wherein the trans-impedance amplifier consists of a single-end amplifier and a feedback resistor RfThe single-ended amplifier is composed of a common source amplifier MN1Cascading an N-tube type source follower MN3And (4) forming. Resistance value Rf1.15K Ω is directly determined by the transimpedance gain parameter of 61.18dB Ω. MP1、MP2、MP3And MN2、MN4For current mirror transistors well-matched in size ratio with each other, for MN1And MN3Providing bias currents of different magnitudes as required to enable proper operation thereof. The high-frequency trans-impedance amplifier is applied to high-frequency three-dimensional ultrasonic imaging detection, is arranged at the front end of an analog reading circuit, adopts a trans-impedance amplification mode, can receive signals with the bandwidth as high as 52.5MHZ, and realizes high-frequency 3D ultrasonic imaging.
Therefore, the invention realizes that the whole system is suitable for a high-frequency ultrasonic imaging environment by methods of reducing the input resistance of the trans-impedance amplifier to realize the maximization of the input current, increasing the transconductance of the single-ended amplifier and the resistance value of the feedback resistance and the like.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (2)

1. A three-dimensional ultrasound imaging system comprising:
a two-dimensional CMUT array which can be reused for receiving or transmitting ultrasonic information;
the analog front end receiving and transmitting module is used for processing ultrasonic information received or transmitted by the two-dimensional CMUT array;
the time gain compensation module is used for compensating the intensity of the sound wave attenuated along with the distance in the transmission process;
the low-pass filter module is used for filtering unnecessary clutter signals;
the ADC conversion module is used for converting the analog signal into a digital signal;
the digital signal processing and controlling module is used for inputting the converted digital signal to the ultrasonic image processing module for analysis and display;
wherein the analog front-end transceiver comprises: the high-voltage transmitting/receiving isolating switch, the trans-impedance amplifier and the pulse generator;
the two-dimensional CMUT array and the array of the analog front-end transceiver module are correspondingly connected through vertical silicon through holes;
the transimpedance amplifier includes: a single-ended amplifier and a feedback resistor Rf(ii) a The single-ended amplifier and a common source amplifier MN1 are cascaded to form an N-tube type source follower MN 3;
the high-voltage transmitting/receiving isolating switch comprises: MOS transistor MSW1And MOS transistor MSW2The MOS transistor MSW1And MOS transistor MSW2The source electrodes are connected and then are connected to the input end of the trans-impedance amplifier; MOS transistor MSW1And MOS transistor MSW2Are IN gated connection with respective enable signals RX _ IN _ EN1, RX _ IN _ EN 2; MOS transistor MSW1One end of the drain of the first transistor is connected with a CMUT1 cell in the two-dimensional CMUT array, and the other end of the drain of the second transistor is connected with the first pulse generator; MOS transistor MSW2One end of the drain of the first transistor is connected with a CMUT2 cell in the two-dimensional CMUT array, and the other end of the drain of the second transistor is connected with the second pulse generator;
the feedback resistor RfThe resistance value of (1.15K Ω), which is directly determined by the transimpedance gain parameter of 61.18dB Ω;
the array of the analog front-end transceiver module is integrated with a two-dimensional CMUT array flip chip package, the two-dimensional CMUT array is arranged above the analog front-end transceiver module, the CMOS analog front-end transceiver array is arranged below the analog front-end transceiver module, and the two are correspondingly connected through a vertical silicon through hole.
2. The three-dimensional ultrasound imaging system according to claim 1, wherein the common source amplifier MN1 is provided with current mirror transistors providing different magnitudes of bias currents thereto, and the N-tube type source follower MN3 is provided with current mirror transistors providing different magnitudes of bias currents thereto.
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