CN110048782B - Even harmonic suppression system in intensity modulation direct detection link - Google Patents
Even harmonic suppression system in intensity modulation direct detection link Download PDFInfo
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- CN110048782B CN110048782B CN201910400512.XA CN201910400512A CN110048782B CN 110048782 B CN110048782 B CN 110048782B CN 201910400512 A CN201910400512 A CN 201910400512A CN 110048782 B CN110048782 B CN 110048782B
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- 230000003287 optical effect Effects 0.000 claims abstract description 56
- 238000012544 monitoring process Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/54—Intensity modulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/61—Coherent receivers
- H04B10/616—Details of the electronic signal processing in coherent optical receivers
- H04B10/6162—Compensation of polarization related effects, e.g., PMD, PDL
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/697—Arrangements for reducing noise and distortion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an even harmonic suppression system in an intensity modulation direct detection link, which consists of a laser source, a first photodiode, a second photodiode, an external modulator, a first optical coupler, a second optical coupler, a photoelectric detector and a bias control circuit board. The bias control circuit board carries out difference integral operation processing on an input monitoring signal of the outer modulator sent by the first photodiode and an input monitoring signal of the photoelectric detector sent by the second photodiode, and uses the result to control bias voltage of the outer modulator so as to adjust bias points of the outer modulator, so that the bias points are changed near a positive intersection point, even harmonic of the outer modulator and output amplitude of even harmonic of the photoelectric detector are matched, and the phase difference is 180 degrees, thereby realizing offset of even harmonic distortion of the outer modulator and even harmonic distortion of the photoelectric detector.
Description
Technical Field
The invention relates to the technical field of microwave photons, in particular to an even harmonic suppression system in an intensity modulation direct detection link.
Background
Microwave photon links have broadband characteristics inherent in the optical domain, which have broad prospects in multiple frequency applications. However, in the microwave photon link, the existence of the photodetector can limit the frequency multiplication application, namely even harmonic generated by the photodetector can destroy the broadband characteristic of the optical domain, and limit the application of multiple octaves. Currently, the existing solution is to make up for this drawback by architecture design, i.e. to build a photodetector array to obtain better linearity. Although for even and odd harmonics the photodetector array gain increases proportionally with the array number, and an increase in array gain can increase the third order intermodulation point. However, because the photodetector array uses a combination of dividing the input signals between the nonlinear devices and linearizing the signals at the output, the complexity of the system is greatly increased by the photodetector array.
Disclosure of Invention
The invention aims to solve the problem that the existence of a photoelectric detector can limit the frequency multiplication application, and provides an even harmonic suppression system in an intensity modulation direct detection link.
In order to solve the problems, the invention is realized by the following technical scheme:
An even harmonic suppression system in an intensity modulation direct detection link consists of a laser source, a first photodiode, a second photodiode, an external modulator, a first optical coupler, a second optical coupler, a photoelectric detector and a bias control circuit board; the light splitting ratio of the main output end and the secondary output end of the first optical coupler and the second optical coupler is the same; the output end of the laser source is connected with the input end of the first optical coupler; the main output end of the first optical coupler is connected with the input end of the external modulator, and the secondary output end of the first optical coupler is connected with one input end of the bias control circuit board through the first photodiode; the output end of the external modulator is connected with the input end of the second optical coupler; the main output end of the second optical coupler is connected with the photoelectric detector, and the secondary output end of the second optical coupler is connected with the other input end of the bias control circuit board through the second photodiode; the radio frequency signal is connected with a radio frequency signal loading end of the external modulator; the output end of the bias control circuit board is connected with the bias voltage loading end of the external modulator; the bias control circuit board performs difference integral operation processing on the input monitoring signal of the external modulator sent by the first photodiode and the input monitoring signal of the photoelectric detector sent by the second photodiode, and uses the result to control the bias voltage of the external modulator so as to adaptively adjust the bias voltage of the external modulator, so that the phase of the bias voltage changes near the positive intersection point, and the output phase difference between the even harmonic of the external modulator and the output phase of the even harmonic of the photoelectric detector is 180 degrees, and the even distortion of the external modulator and the even distortion of the photoelectric detector are mutually offset.
In the above scheme, when the phase of the bias voltage of the external modulator meets ①, the even distortion of the external modulator and the even distortion of the photoelectric detector cancel each other;
Wherein phi dc (t) represents the phase of the bias voltage of the external modulator, a is the power value of the second-order intermodulation point of the photodiode in the photodetector, For the responsivity of the photodetector,/>For the responsivity of the first photodiode,/>For the responsivity of the second photodiode, I 1 (t) is the current value of the monitoring signal input by the external modulator, I 2 (t) is the current value of the monitoring signal input by the photodetector, and K is the proportionality coefficient of the secondary output ends of the first optical coupler and the second optical coupler accounting for the total output.
In the above scheme, the spectral ratio of the main output end to the sub output end of the first optical coupler and the second optical coupler is 95:5 or 99:1.
In the above scheme, the external modulator is a mach-zehnder modulator.
As an improvement, the system further comprises an upper computer connected with the control end of the bias control circuit board.
Compared with the prior art, the offset of the external modulator is adjusted to the position of the tiny offset right-crossing point under the condition that the fundamental wave power is not reduced, so that the even harmonic amplitude of the external modulator is matched with the amplitude of the even harmonic of the photoelectric detector, and under a certain condition, the two output phases are 180 degrees out of phase, so that the even harmonic distortion of the external modulator and the even harmonic distortion of the photoelectric detector are mutually offset.
Drawings
Fig. 1 is a schematic diagram of an even harmonic rejection system in an intensity modulated direct detection link.
Fig. 2 shows test results of fundamental wave power and second harmonic power at a fundamental frequency of 2 GHz.
Reference numerals in the drawings: 1. the device comprises a laser source, 2-1, a first photodiode, 2-2, a second photodiode, 3, an external modulator, 4-1, a first optical coupler, 4-2, a second optical coupler, 5, a photoelectric detector, 6, a bias control circuit board, 7 and an upper computer.
Detailed Description
The present invention will be further described in detail with reference to specific examples in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1, an even harmonic suppression system in an intensity modulation direct detection link mainly comprises a laser source 1, a first photodiode 2-1, a second photodiode 2-2, an external modulator 3, a first optical coupler 4-1, a second optical coupler 4-2, a photodetector 5, a bias control circuit board 6 and an upper computer 7. In the present invention, the external modulator 3 is a Mach-Zehnder modulator (Mach-Zehnder modulator, MZM). The splitting ratio of the primary output and the secondary output of the first optocoupler 4-1 and the second optocoupler 4-2 is the same, i.e. either 95:5 at the same time or 99:1 at the same time. In this embodiment, the splitting ratio of the primary output end and the secondary output end of the first optical coupler 4-1 and the second optical coupler 4-2 is 95:5.
The output end of the laser source 1 is connected with the input end of the first optical coupler 4-1, the main output end of the first optical coupler 4-1 is connected with the input end of the outer modulator 3, the output end of the outer modulator 3 is connected with the input end of the second optical coupler 4-2, and the main output end of the second optical coupler 4-2 is connected with the photoelectric detector 5. The sub output terminal of the first photo coupler 4-1 is connected to an input terminal of the bias control circuit board 6 via the first photodiode 2-1. The secondary output of the second optocoupler 4-2 is connected via a second photodiode 2-2 to the other input of the bias control circuit board 6. The output end of the bias control circuit board 6 and the radio frequency signal are respectively connected with the bias voltage loading end and the radio frequency signal loading end of the external modulator 3. In addition, the control end of the bias control circuit board 6 may also be connected to the host computer 7.
A stable optical carrier is generated from the laser source 1, and the optical carrier passes through an optical coupler to realize 95:5 power distribution. Wherein 95% of the optical carrier signals (A-path signals) are input into the outer modulator 3, after the loading of radio frequency signals and the control of bias voltage are realized in the outer modulator 3, the signals output by the outer modulator 3 realize 95:5 power distribution through an optical coupler, and 95% of the signals (C-path signals) are input into the photoelectric detector 5.
The first optical coupler 4-1 and the second optical coupler 4-2 are respectively arranged at the input end and the output end of the external modulator 3, and are arranged in an extremely unbalanced state to realize large-scale power distribution, so that a small part of optical signals are reserved for monitoring. Two 5% small-part optical signals (a B-path signal and a D-path signal) split by the first optical coupler 4-1 and the second optical coupler 4-2 are input to the bias control circuit in common via the first photodiode 2-1 and the second photodiode 2-2, respectively, so as to constitute an integral feedback loop.
The first photodiode 2-1 located between the first optocoupler 4-1 and the bias control circuit and the second photodiode 2-2 located between the second optocoupler 4-2 and the bias control circuit are used for monitoring the input of the external modulator 3 and the small part of the optical signal split by the input of the photodetector 5 in real time, respectively, so that the bias control circuit adjusts the bias voltage of the external modulator 3 for the change of the optical signal.
The bias control circuit compares two paths of optical signals for monitoring, integrates and calculates a signal difference value, outputs the signal difference value to a bias voltage loading end of the outer modulator 3, and further controls the bias voltage of the outer modulator 3 to enable a bias point of the outer modulator 3 to be located at a proper position, so that the bias point of the outer modulator 3 is self-adaptive near a right intersection point, and therefore a cancellation condition is met, and even harmonic of the outer modulator 3 and even harmonic of the photoelectric detector 5 are cancelled.
The following takes second harmonic distortion as an example to illustrate that the invention has the effect of suppressing even harmonics:
the laser source 1 emits a stable optical carrier signal into the external modulator 3, radio Frequency (RF) loading and bias voltage (DC) loading are realized in the external modulator 3, and the modulated signal is sent to the photodetector 5.
Since the bias point of the external modulator 3 has a linear characteristic when it is at the intersection point, a certain harmonic distortion is induced when the bias point of the external modulator 3 deviates from the intersection point. Therefore, in order to quantify the photocurrent corresponding to the harmonic distortion of the external modulator 3, the present invention assumes that the signal input to the external modulator 3 is loaded with a dc bias voltage V dc, the loaded RF signal is a dual-tone signal V 1sin(Ω1t)+V2sin(Ω2 t of equal amplitude), and the response of the ideal photodetector 5 isThe maximum distortion term in the even harmonic, i.e. second order intermodulation distortion (IMD 2), is derived from the transfer function of the IMDD link.
Unlike harmonic distortion caused by the change in the bias point of the external modulator 3, the harmonic distortion generated by the photodetector 5 is mainly caused by the inherent nonlinearity of the photodiode. Therefore, in order to quantify the harmonic distortion of the photodetector 5, the response of the photodetector 5 under the fundamental wave drive of the external modulator 3 is taylor-expanded, and the second-order intermodulation distortion term thereof is obtained from the taylor polynomial.
The second-order intermodulation distortion of the external modulator 3 is superimposed with the second-order intermodulation distortion generated by the photodetector 5 to obtain a joint response. Let the joint response be 0, that is, the second-order intermodulation distortion of the external modulator 3 and the second-order intermodulation distortion generated by the photodetector 5 cancel each other, so as to obtain a cancellation condition:
The above parameters are easily determined, the bias phase at the quadrature point and the photocurrent I dc,q are easily measurable, and the amplitude of a 2 is derived from the small signal gain of the test link and the photodiode second order intermodulation point (OIP 2). And obtaining a periodic function of the offset phase phi dc through the offset strip, and further obtaining a voltage function of the offset point.
Based on the derived cancellation condition, a bias control circuit is designed, the input of the external modulator 3 and the input of the photodetector 5 are used as two paths of monitoring signals, and the two paths of monitoring optical signals are subjected to differential integral operation processing and then used for controlling the bias voltage of the external modulator 3, so that the bias point of the external modulator 3 is adjusted. The phase of the bias voltage point of the external modulator 3 is as follows:
Where φ dc denotes the bias voltage phase function, a is the second order intermodulation point measurement (i.e. power value) of the photodiodes in the photodetector 5, and I dc,q denotes the photocurrent at the quadrature point of the external modulator 3. For the responsivity of the photodetector 5,And/>Responsivity of the photodiodes 2-1 and 2-2, respectively, I 1 and I 2 are monitored photocurrents of the photodiodes 2-1 and 2-2, respectively, K is the proportionality coefficient of the optocoupler, and k=5% when the spectral ratio of the coupler is 95:5.
The test results of the fundamental wave power and the second harmonic power at the fundamental wave frequency of 2GHz are shown in fig. 2. The fundamental wave power is 14.35dBm, the second harmonic power at the 4GHz frequency point is-21.04 dBm, and the harmonic suppression is about 35.5dBc, which shows that the invention has good second harmonic suppression effect under the condition of ensuring that the fundamental wave power is not reduced.
The invention starts from the outer modulator 3, and the offset point of the outer modulator 3 is self-adaptive to offset the offset point near the right intersection point, so that the distortion amplitude of even harmonic wave is changed to match and offset the distortion amplitude of the photoelectric detector 5. The change of the self-adaptive bias point of the outer modulator 3 is determined by the offset condition, and a bias control circuit is designed according to the calculated offset condition to control the change of the bias voltage of the outer modulator 3, so that the even-order distortion of the outer modulator 3 and the even-order distortion of the photoelectric detector 5 are offset, and the suppression of even-order harmonic waves in a link is realized.
It should be noted that, although the examples described above are illustrative, this is not a limitation of the present invention, and thus the present invention is not limited to the above-described specific embodiments. Other embodiments, which are apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein, are considered to be within the scope of the invention as claimed.
Claims (5)
1. An even harmonic suppression system in an intensity modulation direct detection link is characterized by comprising a laser source (1), a first photodiode (2-1), a second photodiode (2-2), an external modulator (3), a first optical coupler (4-1), a second optical coupler (4-2), a photoelectric detector (5) and a bias control circuit board (6); wherein the light splitting ratio of the main output end and the secondary output end of the first optical coupler (4-1) and the second optical coupler (4-2) is the same;
The output end of the laser source (1) is connected with the input end of the first optical coupler (4-1); the main output end of the first optical coupler (4-1) is connected with the input end of the external modulator (3), and the secondary output end of the first optical coupler (4-1) is connected with one input end of the bias control circuit board (6) through the first photodiode (2-1); the output end of the outer modulator (3) is connected with the input end of the second optical coupler (4-2); the main output end of the second optical coupler (4-2) is connected with the photoelectric detector (5), and the secondary output end of the second optical coupler (4-2) is connected with the other input end of the bias control circuit board (6) through the second photodiode (2-2);
The radio frequency signal is connected with a radio frequency signal loading end of the outer modulator (3); the output end of the bias control circuit board (6) is connected with the bias voltage loading end of the external modulator (3);
The bias control circuit board (6) carries out difference integral operation processing on the input monitoring signal of the external modulator (3) sent by the first photodiode (2-1) and the input monitoring signal of the photoelectric detector (5) sent by the second photodiode (2-2), and uses the result to control the bias voltage of the external modulator (3) so as to adaptively adjust the bias voltage of the external modulator (3) to enable the phase of the bias voltage to change near the right-angle point, and enable the output phases of even harmonic waves of the external modulator (3) and even harmonic waves of the photoelectric detector (5) to differ by 180 degrees, and even distortion of the external modulator (3) and even distortion of the photoelectric detector (5) are offset.
2. An intensity modulated direct detection link even harmonic rejection system according to claim 1, characterized in that when the phase of the bias voltage of the external modulator (3) satisfies ①, the external modulator (3) even distortion and the photodetector (5) even distortion cancel each other;
Wherein phi dc (t) represents the phase of the bias voltage of the external modulator, a is the power value of the second-order intermodulation point of the photodiode in the photodetector, For the responsivity of the photodetector,/>For the responsivity of the first photodiode,/>For the responsivity of the second photodiode, I 1 (t) is the current value of the monitoring signal input by the external modulator, I 2 (t) is the current value of the monitoring signal input by the photodetector, and K is the proportionality coefficient of the secondary output ends of the first optical coupler and the second optical coupler accounting for the total output.
3. An even harmonic rejection system in an intensity modulated direct detection link according to claim 1 or 2, characterized in that the splitting ratio of the primary and secondary outputs of the first (4-1) and second (4-2) optocouplers is 95:5 or 99:1.
4. An even harmonic rejection system in an intensity modulated direct detection link as in claim 1, the external modulator (3) being a mach-zehnder modulator.
5. The system for suppressing even harmonics in an intensity modulated direct detection link as claimed in claim 1, further comprising a host computer (7), the host computer (7) being connected to the control terminal of the bias control circuit board (6).
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