CN110048022B - O L ED device and preparation method thereof - Google Patents
O L ED device and preparation method thereof Download PDFInfo
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- CN110048022B CN110048022B CN201910323616.5A CN201910323616A CN110048022B CN 110048022 B CN110048022 B CN 110048022B CN 201910323616 A CN201910323616 A CN 201910323616A CN 110048022 B CN110048022 B CN 110048022B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/824—Cathodes combined with auxiliary electrodes
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Abstract
The invention relates to an O L ED device and a preparation method thereof.A O L ED device comprises a substrate, two anodes, an auxiliary cathode, two dams, a functional layer, a film layer and a surface cathode.A good solvent and a poor solvent or a mixed solvent of the good solvent and the poor solvent which are dissolved by a high molecular solute are printed on an electron transmission layer at the bottom of a contact hole by ink-jet printing, so that the solvent washes and dissolves the electron transmission layer at the bottom of the contact hole to destroy the film layer structure to form a nanoparticle structure, and then the solvent is removed to form the film layer.
Description
Technical Field
The invention relates to the technical field of display, in particular to an O L ED device and a preparation method thereof.
Background
The basic structure of O L ED (Organic L light-Emitting Diode, abbreviated as O L ED) is formed by connecting a thin transparent Indium Tin Oxide (ITO) with semiconductor property with the positive electrode of electric power and adding another metal surface cathode to form a sandwich structure, the whole structure layer comprises a hole transport layer (HT L), a luminescent layer (E L) and an electron transport layer (ET L), when electric power is supplied to proper voltage, positive holes and surface cathode charges are combined in the luminescent layer and are combined to form excitons (electron-hole pairs) in an excited state with a certain probability under the action of coulomb force, and the excited state is unstable in a normal environment, the excitons in the excited state are combined and transfer energy to a luminescent material to make the luminescent material transition from a ground state to the excited state, and the excited state energy generates photons through a radiation relaxation process to release light energy to generate red, green and blue light according to different formulas to form basic RGB colors.
O L ED firstly has the characteristic of self-luminescence, unlike TFT-L CD (thin film transistor-liquid crystal display), which needs backlight, so that both visibility and brightness are high, and O L ED has the advantages of low voltage requirement, high power-saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, extremely high response speed, etc., and is one of the most important display technologies at present, and is expected to gradually replace TFT-L CD, and is the next generation of mainstream display technology after L CD.
Currently, the application directions of O L ED include two major categories, i.e., direct light emission technology of rgb organic display devices and light emission technology of white organic display devices with color filters.
However, as the requirement of resolution of users is higher and higher, the O L ED of the bottom structure is limited by the aperture ratio, and the higher resolution is difficult to realize.
However, the top O L ED surface cathode usually uses a thin transparent metal as an electrode, and in order to avoid the use of a complex Mask, the transparent surface cathode is connected to the edge circuit of the screen by whole surface evaporation, since the transmittance is considered, the transparent surface cathode is generally made thin, and the conductive capability is poor, it is known from the R ═ ρ L/S strip resistance calculation formula that when the screen size is large, the light emitting point at the center of the screen is far away from the electrode interface, and the driving voltage is greatly increased by long-distance current transmission, and the driving voltage difference between the area at the inner edge of the screen near the electrode interface and the area at the center of the screen is too large, and there is a voltage drop (IR drop).
Disclosure of Invention
An object of the present invention is to provide an O L ED device and a method for manufacturing the same, which can solve the problem of voltage drop of the current O L ED device.
In order to solve the above problems, one embodiment of the present invention provides an O L ED device, which includes a substrate, two anodes, an auxiliary cathode, two banks, a functional layer, a thin film layer and a face cathode, wherein the two anodes are separately disposed on the substrate, the auxiliary cathode is disposed on the substrate between the two anodes, the two banks are disposed above the auxiliary cathode, the two banks and the surface of the auxiliary cathode form a contact hole, the functional layer includes an electron transport layer disposed on the two anodes and the two banks, the thin film layer is disposed at the bottom of the contact hole and partially covers the surface of the auxiliary cathode, the thin film layer is made of a nanoparticle structure of an electron transport layer material, the face cathode is disposed on the electron transport layer and in the contact hole, and the face cathode in the contact hole is in direct conduction with the auxiliary cathode not covered by the thin film layer.
Further wherein the nanoparticle structure of the electron transport layer material of the thin film layer comprises 1,3, 5-tris [ (3-pyridyl) -3-phenyl ] benzene nanoparticles and/or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene nanoparticles.
Further, the constituent material of the thin film layer also comprises a conductor material, and the conductor material comprises graphene and/or nano silver.
Further, the surface cathode in the contact hole is also conducted with the auxiliary cathode through the thin film layer.
Further wherein the functional layer further comprises: hole injection layer, hole transport layer, luminescent layer. The hole injection layer is arranged on the two anodes; the hole transport layer is arranged on the hole injection layer; and the light emitting layer is disposed on the hole transport layer; the electron transmission layer is arranged on the light-emitting layer, the bottom of the contact hole and the two dykes.
The invention provides a preparation method of an O L ED device, which comprises the steps of S1, providing a substrate, preparing two anodes on the substrate in a separated mode, preparing an auxiliary cathode on the substrate between the two anodes, preparing two dams above two sides of the auxiliary cathode oppositely, enabling the dams and the surface of the auxiliary cathode to form a contact hole, S2, preparing a hole injection layer, a hole transport layer and a light emitting layer on the two anodes respectively, S3, preparing an electron transport layer on the light emitting layer, the bottom of the contact hole and the two dams, S4, converting the electron transport layer arranged at the bottom of the contact hole into a thin film layer formed by a nanoparticle structure of materials of the electron transport layer, and S5, preparing a face cathode on the electron transport layer and in the contact hole, and enabling the face cathode in the contact hole to be directly connected with the auxiliary cathode which is not covered by the thin film layer.
Further, the preparation steps of converting the electron transport layer into the thin film layer are as follows: printing a solvent on the surface of the electronic transmission layer at the bottom of the contact hole in an ink-jet printing mode, flushing and dissolving the electronic transmission layer at the bottom of the contact hole to destroy the film structure of the electronic transmission layer to form a nano-particle structure, and volatilizing the solvent in a dry pump pumping mode to remove the solvent so that the nano-particle structure of the electronic transmission layer forms the film layer.
Further, the solvent comprises a good solvent and/or a poor solvent for dissolving the high molecular solute; the good solvent comprises N, N-dimethylformamide and/or tetrahydrofuran, and the poor solvent comprises methanol and/or ethanol.
Further, a conductor material is added into the solvent, and the conductor material comprises graphene and/or nano silver.
Further, the surface cathode in the contact hole is also conducted with the auxiliary cathode through the thin film layer.
The invention has the advantages that good solvent, poor solvent or mixed solvent of the good solvent and the poor solvent dissolved by high molecular solute is printed on the electron transmission layer at the bottom in the contact hole by an ink-jet printing technology, so that the solvent washes and dissolves the electron transmission layer at the bottom in the contact hole to destroy the film structure of the electron transmission layer, a nanoparticle structure is formed, then the solvent is removed to form a film layer, and the uniformity of the film structure of the film layer formed by the nanoparticles is reduced due to the agglomeration effect of the nanoparticles, and space flaws or holes can be generated in the film layer, so that the auxiliary cathode below the film layer cannot be completely and effectively covered, and thus, a surface cathode can be directly conducted with the auxiliary cathode which is not covered by the film layer, and the problem of voltage drop is solved to a certain extent.
Furthermore, the invention can also add conductor materials such as graphene and nano silver in the solvent for flushing the electron transport layer, so that the conductivity of the generated thin film layer is increased, and the surface cathode can be communicated with the auxiliary cathode through the thin film layer mixed with the conductor materials, thereby further improving the problem of voltage drop.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an O L ED device of embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of an O L ED device in accordance with embodiment 2 of the present invention.
FIG. 3 is a process flow diagram of the O L ED device of the present invention.
The components in the figure are identified as follows:
1. anode 2, auxiliary cathode
3. Bank 41 and hole injection layer
42. Hole transport layer 43 and light-emitting layer
44. Electron transport layer 51, nanoparticle structure
6. Surface cathode 7, contact hole
52. Conductor material
Detailed Description
The following detailed description of the preferred embodiments of the present invention is provided to enable those skilled in the art to make and use the present invention in a complete manner, and is provided for illustration of the technical disclosure of the present invention so that the technical disclosure of the present invention will be more clearly understood and appreciated by those skilled in the art how to implement the present invention. The present invention may, however, be embodied in many different forms of embodiment, and the scope of the present invention should not be construed as limited to the embodiment set forth herein, but rather construed as being limited only by the following description of the embodiment.
The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc., are only directions in the drawings, and are used for explaining and explaining the present invention, but not for limiting the scope of the present invention.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for convenience of understanding and description, and the present invention is not limited to the size and thickness of each component.
When certain components are described as being "on" another component, the component can be directly on the other component; there may also be an intermediate component disposed on the intermediate component and the intermediate component disposed on another component. When an element is referred to as being "mounted to" or "connected to" another element, they are directly "mounted to" or "connected to" the other element or "mounted to" or "connected to" the other element through an intermediate element.
Example 1
As shown in fig. 1, the O L ED device of the present embodiment includes a substrate (not shown), two anodes 1, an auxiliary cathode 2, two banks 3, a functional layer, a thin film layer, and a surface cathode 6.
The two anodes 1 are separately disposed on the substrate, and a transparent electrode made of a transparent conductive film such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) may be used to have light transmittance.
Wherein the auxiliary cathode 2 is disposed on the substrate between the two anodes 1, and the two banks 3 are oppositely disposed above both sides of the auxiliary cathode 2; the two banks 3 and the surface of the auxiliary cathode 2 form a contact hole 7. The auxiliary cathode 2 is conducted with the surface cathode 6 through the contact hole 7 structure, and the voltage drop problem can be effectively solved through the conduction of the auxiliary cathode 2 and the surface cathode 6 due to the fact that the resistance of the auxiliary cathode 2 is small.
Wherein the functional layer comprises: a hole injection layer 41, a hole transport layer 42, a light emitting layer 43, and an electron transport layer 44. The hole injection layer 41 is disposed on the two anodes 1; the hole transport layer 42 is disposed on the hole injection layer 41; and the light-emitting layer 43 is provided on the hole transport layer 42; the electron transport layer 44 is provided on the light emitting layer 43 and the banks 3 on both left and right sides of the two anodes 1.
The hole transport layer 42 controls the transport of holes, and thus controls the recombination of holes and electrons in the light emitting layer 433, thereby improving the light emitting efficiency. The light emitting layer 43 is made of a light emitting material, and the light emitting layer 43 may be prepared by one of evaporation, printing, a homogeneous deposition method, a vapor phase synthesis method, and the like, but is not limited thereto. The electron transport layer 44 controls the transport of electrons, and thus controls the recombination of electrons and holes in the light emitting layer 43, thereby improving the light emitting efficiency.
The thin film layer is formed by printing a good solvent and a poor solvent which are dissolved by a high molecular solute or a mixed solvent of the good solvent and the poor solvent on an electronic transmission layer 44 at the bottom in the contact hole 7 through an ink-jet printing technology, so that the solvent is washed out and dissolves the electronic transmission layer 44 at the bottom in the contact hole 7, the film layer structure of the electronic transmission layer is damaged, a nanoparticle structure 51 is formed, then a dry pump pumping technology is utilized, the solvent is volatilized, a thin film layer is formed in the contact hole 7 again, the uniformity of the thin film layer is reduced due to the agglomeration of the nanoparticle structure 51, and the effect that the auxiliary cathode 2 is not completely covered by the thin film.
Wherein the nanoparticle structure of the electron transport layer material of the thin film layer comprises 1,3, 5-tris [ (3-pyridyl) -3-phenyl ] benzene nanoparticles and/or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene nanoparticles, which are changed according to the change of the material of the electron transport layer 44.
Wherein the face cathode 7 is disposed on the electron transport layer 44 and within the contact hole 7. The surface cathode 6 may be a transparent electrode made of a transparent conductive film such as indium tin oxide or indium zinc oxide, and has a light-transmitting property. The cathode 4 functions as a planar cathode for injecting electrons into the light-emitting layer 43. Because the auxiliary cathode 2 is not completely covered by the thin film layer, the auxiliary cathode 2 and the surface cathode 6 can be directly conducted through the auxiliary cathode which is not covered by the thin film layer, and the problem of voltage drop is effectively solved.
Example 2
Only the differences between the present embodiment and embodiment 1 will be described below, and the descriptions of the differences are omitted here.
As shown in fig. 2, wherein a conductor material 52 is further added to the thin film layer. Wherein the good conductor material is graphene and/or nano silver. The additional conductor material 52 can enhance the conductivity of the thin film layer, thereby effectively solving the problem of voltage drop.
Example 3
As shown in FIG. 3, this embodiment provides a method for manufacturing an O L ED device, which includes S1, providing a substrate, separately preparing two anodes 1 on the substrate, preparing an auxiliary cathode 2 on the substrate between the two anodes 1, preparing two banks 3 above two sides of the auxiliary cathode 2 oppositely, so that a contact hole 7 is formed on the surfaces of the banks 3 and the auxiliary cathode 2, S2, preparing a hole injection layer 41, a hole transport layer 42 and a light emitting layer 43 on the two anodes 1, respectively, S3, preparing an electron transport layer 44 on the light emitting layer 43, the bottom of the contact hole 7 and the banks 3, S4, printing a good solvent, a poor solvent or a mixed solvent of the good solvent and the poor solvent, which is a solute, into the surface of the electron transport layer 44 at the bottom of the contact hole 7 by means of ink-jet printing, so that the contact hole is washed, the electron transport layer 44 at the bottom of the contact hole 7 is dissolved, the contact hole is damaged to form a nanoparticle structure 51, a conductor material 52 can be added to the solvent, the electron transport layer 44 at the bottom of the contact hole 7 is dissolved by means of the cathode transport layer 466, so that the cathode transport layer is directly connected with the cathode 2, and the cathode transport layer 2 is formed on the surface of the cathode 597 by means of the cathode 596, so that the cathode 597, and the cathode 596, so that the cathode transport layer is directly connected with the cathode 597 by means of the.
Wherein the good solvent comprises N, N-dimethylformamide and/or tetrahydrofuran, and the poor solvent comprises methanol and/or ethanol.
Wherein the conductor material 52 comprises graphene and/or nanosilver. The conductive material 52 can enhance the conductivity of the thin film layer, enhance the conduction between the surface cathode 6 and the auxiliary cathode 2, and effectively solve the problem of voltage drop.
The description of features or aspects in each of the exemplary embodiments should generally be considered as applicable to like features or aspects in other exemplary embodiments although the present invention has been described with reference to exemplary embodiments, various changes and modifications may be suggested to one skilled in the art.
Claims (10)
1. An O L ED device, comprising:
a substrate;
two anodes spaced apart on the substrate;
an auxiliary cathode disposed on the substrate between the two anodes;
two dams, the two dams are oppositely arranged above two sides of the auxiliary cathode;
a contact hole is formed on the surfaces of the two dams and the auxiliary cathode;
the functional layer comprises an electron transport layer, and the electron transport layer is arranged on the two anodes and the two dykes;
the thin film layer is arranged at the bottom of the contact hole and partially covers the surface of the auxiliary cathode, wherein the constituent material structure of the thin film layer comprises a nanoparticle structure formed by converting the material of the electron transport layer;
and the surface cathode is arranged on the electron transmission layer and in the contact hole, and the surface cathode in the contact hole is directly communicated with the auxiliary cathode which is not covered by the thin film layer.
2. The O L ED device according to claim 1, wherein the nanoparticle structure of the electron transport layer material of the thin film layer comprises 1,3, 5-tris [ (3-pyridyl) -3-phenyl ] benzene nanoparticles and/or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene nanoparticles.
3. The O L ED device according to claim 1, wherein the constituent materials of the thin film layers further include conductor materials including graphene and/or nano-silver.
4. The O L ED device according to claim 3, wherein the face cathode in the contact hole is also in electrical communication with the auxiliary cathode through the thin film layer.
5. The O L ED device of claim 1, wherein the functional layer further comprises:
a hole injection layer disposed on the two anodes;
a hole transport layer disposed on the hole injection layer; and
a light emitting layer disposed on the hole transport layer;
the electron transmission layer is arranged on the light-emitting layer, the bottom of the contact hole and the two dykes.
6. A method for preparing an O L ED device, comprising:
s1, providing a substrate, preparing two anodes on the substrate in a separated mode, preparing an auxiliary cathode on the substrate between the two anodes, and preparing two dams oppositely above two sides of the auxiliary cathode so that a contact hole is formed between the two dams and the surface of the auxiliary cathode;
s2, respectively preparing a hole injection layer, a hole transport layer and a light-emitting layer on the two anodes;
s3, preparing an electron transport layer on the light-emitting layer, the bottom of the contact hole and the two dams;
s4, converting the electron transmission layer arranged at the bottom of the contact hole into a thin film layer formed by a nanoparticle structure of the material of the electron transmission layer;
s5, preparing a surface cathode on the electron transport layer and in the contact hole, and directly conducting the surface cathode in the contact hole and the auxiliary cathode which is not covered by the thin film layer.
7. The O L ED device manufacturing method according to claim 6, wherein the step of converting the electron transport layer into the thin film layer is to print a solvent into the surface of the electron transport layer at the bottom of the contact hole by means of ink-jet printing, wash and dissolve the electron transport layer formed at the bottom of the contact hole to destroy the film structure thereof to form a nanoparticle structure, and then evaporate the solvent by means of dry pump pumping to remove the solvent so that the nanoparticle structure of the electron transport layer forms the thin film layer.
8. The method for preparing an O L ED device according to claim 7, wherein the solvent comprises a good solvent and/or a poor solvent for dissolving a high molecular solute, the good solvent comprises N, N-dimethylformamide and/or tetrahydrofuran, and the poor solvent comprises methanol and/or ethanol.
9. The method for preparing an O L ED device according to claim 8, wherein a conductor material is further added to the solvent, and the conductor material comprises graphene and/or nano silver.
10. The method of claim 9, wherein the surface cathode in the contact hole is further in electrical communication with the auxiliary cathode through the thin film layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910323616.5A CN110048022B (en) | 2019-04-22 | 2019-04-22 | O L ED device and preparation method thereof |
| PCT/CN2019/088735 WO2020215434A1 (en) | 2019-04-22 | 2019-05-28 | Oled device and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910323616.5A CN110048022B (en) | 2019-04-22 | 2019-04-22 | O L ED device and preparation method thereof |
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| CN110048022A CN110048022A (en) | 2019-07-23 |
| CN110048022B true CN110048022B (en) | 2020-08-04 |
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| CN110828705A (en) * | 2019-10-30 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Panel and manufacturing method thereof |
| CN110993642A (en) * | 2019-11-01 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110993812B (en) * | 2019-11-08 | 2021-01-15 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode panel and manufacturing method thereof |
| CN111525042A (en) * | 2020-04-26 | 2020-08-11 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display panel and manufacturing method thereof |
| CN113241367B (en) * | 2021-07-09 | 2021-09-21 | 北京京东方技术开发有限公司 | Display substrate and preparation method thereof |
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| US7642109B2 (en) * | 2005-08-29 | 2010-01-05 | Eastman Kodak Company | Electrical connection in OLED devices |
| JP2014093288A (en) * | 2012-11-07 | 2014-05-19 | Dainippon Printing Co Ltd | Display device |
| KR102059962B1 (en) * | 2013-05-22 | 2019-12-30 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| JP6211873B2 (en) * | 2013-09-30 | 2017-10-11 | 株式会社ジャパンディスプレイ | Organic EL display device and method of manufacturing organic EL display device |
| US9117785B2 (en) * | 2013-11-22 | 2015-08-25 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
| CN103872090B (en) * | 2014-03-03 | 2017-04-12 | 青岛海信电器股份有限公司 | Organic light emitting diode display pane |
| KR102458597B1 (en) * | 2015-06-30 | 2022-10-25 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device And Method Of Fabricating The Same |
| KR102543639B1 (en) * | 2016-07-18 | 2023-06-15 | 삼성디스플레이 주식회사 | Display panel, manufacturing method thereof and display apparatus having the same |
| CN109244269B (en) * | 2018-09-19 | 2021-01-26 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN109560117B (en) * | 2018-12-21 | 2022-04-12 | 合肥鑫晟光电科技有限公司 | Array substrate, preparation method thereof and display device |
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