CN110047990B - Conductive film, photoelectric semiconductor device and manufacturing method thereof - Google Patents
Conductive film, photoelectric semiconductor device and manufacturing method thereof Download PDFInfo
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- CN110047990B CN110047990B CN201811298368.5A CN201811298368A CN110047990B CN 110047990 B CN110047990 B CN 110047990B CN 201811298368 A CN201811298368 A CN 201811298368A CN 110047990 B CN110047990 B CN 110047990B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Non-Insulated Conductors (AREA)
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Abstract
The invention discloses a conductive film, a photoelectric semiconductor device and a manufacturing method thereof. The conductive film is matched with at least one micro-size semiconductor component and a matrix substrate for application, the matrix substrate is provided with a substrate and a matrix circuit, the matrix circuit is arranged on the substrate, and the conductive film comprises a first film layer and a second film layer. The first film layer is disposed on the matrix circuit and has a plurality of conductive particles and an insulating material, and the conductive particles are mixed in the insulating material. The second film layer is an insulating layer and is arranged on the first film layer; wherein at least part of the micro-sized semiconductor component is located in the conductive film and has at least one electrode electrically connected to the matrix circuit in a vertical direction of the matrix substrate through part of the conductive particles.
Description
Technical Field
The invention relates to a vertical conductive film, a photoelectric semiconductor device and a manufacturing method thereof.
Background
Compared with the conventional liquid crystal display, a Micro light emitting diode Array (Micro LED Array) display composed of Micro LEDs (Micro LEDs, μ LEDs) does not need an additional backlight source, and thus is more conducive to the purposes of light weight and thin profile.
In the process of manufacturing a photoelectric device, a conventional light emitting diode (with a side length of more than 150 micrometers) is manufactured by epitaxial (epitax), yellow light, metallization, etching and other processes, then cut to obtain a single light emitting diode grain, and the electrode of the light emitting diode is electrically connected with a circuit substrate by wire bonding or eutectic bonding. However, for micro-leds, due to their relatively small size (e.g., only 25 microns or less), electrical connection of the electrodes cannot be made with conventional wire-bonding or eutectic-bonding equipment.
Disclosure of Invention
In view of the foregoing, it is an object of the present invention to provide a conductive film, an optoelectronic semiconductor device and a method for manufacturing the same, which can solve the problem that the micro-sized semiconductor device is too small to be electrically connected by the conventional wire bonding or eutectic bonding process.
To achieve the above object, a conductive film according to the present invention is applied in combination with at least one micro-scale semiconductor device and a matrix substrate, the matrix substrate having a substrate and a matrix circuit, the matrix circuit being disposed on the substrate, the conductive film including a first film and a second film. The first film layer is arranged on the matrix circuit and is provided with a plurality of conductive particles and insulating materials, the insulating materials have adhesion, and the conductive particles are mixed in the insulating materials. The second film layer is an insulating layer, has adhesiveness and is arranged on the first film layer; at least part of the micro-size semiconductor component is positioned in the conductive film and is provided with at least one electrode, and the electrode is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through part of the conductive particles.
To achieve the above object, an optoelectronic semiconductor device according to the present invention comprises a matrix substrate, a conductive film and at least one micro-scale semiconductor element. The matrix substrate has a substrate and a matrix circuit, and the matrix circuit is provided on the substrate. The conductive film comprises a first film layer and a second film layer. The first film layer is arranged on the matrix circuit and is provided with a plurality of conductive particles and insulating materials, the insulating materials have adhesion, and the conductive particles are mixed in the insulating materials. The second film layer is an insulating layer and has adhesiveness, and is disposed on the first film layer. The micro-scale semiconductor component is at least partially arranged in the conductive film, and the micro-scale semiconductor component is provided with at least one electrode which is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through part of the conductive particles.
In one embodiment, the second layer has a greater flowability and a greater adhesion than the first layer and a hardness less than the hardness of the first layer at room temperature.
In one embodiment, the first film layer has a thickness between 2.5 and 3.5 microns, the second film layer has a thickness between 2 and 4 microns, and the conductive film has a total thickness of no greater than 6.5 microns.
In one embodiment, the second film layer has an adhesion to glass of greater than 1100 grams per square centimeter at a temperature between 25 ℃ and 50 ℃.
In one embodiment, neither the first nor the second film layer cures at 60 ℃ for 4 minutes.
In one embodiment, the micro-scale semiconductor component has a side dimension of 150 microns or less.
To achieve the above object, a method for manufacturing an optoelectronic semiconductor device according to the present invention comprises: providing a matrix substrate, wherein the matrix substrate comprises a substrate and a matrix circuit, and the matrix circuit is arranged on the substrate; providing a conductive film which is attached to the matrix circuit, wherein the conductive film comprises a first film layer and a second film layer, the first film layer is arranged on the matrix circuit and is provided with a plurality of conductive particles and insulating materials, the insulating materials have adhesiveness, the conductive particles are mixed in the insulating materials, and the second film layer is an insulating layer and is provided with adhesiveness and is arranged on the first film layer; disposing at least one micro-scale semiconductor device on the second film layer, wherein at least one electrode of the micro-scale semiconductor device faces the second film layer; pressing the micro-scale semiconductor component from the second film layer to the conductive particles of the first film layer at a first temperature and a first pressure for a first time; raising the temperature to a second temperature while raising the pressure to a second pressure for a second time without relieving the pressure; and curing the first film layer and the second film layer, so that the electrodes of the micro-scale semiconductor assembly are electrically connected with the matrix circuit in the vertical direction of the matrix substrate through part of the conductive particles.
In one embodiment, the first temperature ranges between 50 ℃ and 80 ℃, the first pressure ranges between 1MPa and 10MPa, and the first time ranges between 5 seconds and 40 seconds.
In one embodiment, the second temperature ranges between 140 ℃ and 200 ℃, the second pressure ranges between 50MPa and 100MPa, and the second time ranges between 5 seconds and 60 seconds.
In view of the above, in the conductive film, the optoelectronic semiconductor device and the method for manufacturing the same according to the present invention, the electrode of the micro-sized semiconductor device is electrically connected to the matrix circuit by using the vertical conductive film, so that the problem that the micro-sized semiconductor device cannot be electrically connected to the matrix circuit by the conventional wire bonding or eutectic bonding process due to the small size of the micro-sized semiconductor device can be solved. In addition, compared with the conventional transposing and bonding technology, the process of the optoelectronic semiconductor device of the present invention is also simple and fast, and can be applied to different fields according to design requirements, and meanwhile, the manufacturing time and the manufacturing cost are also low.
Drawings
FIG. 1 is a flow chart illustrating a method for fabricating an optoelectronic semiconductor device according to a preferred embodiment of the present invention.
Fig. 2A to fig. 2F are schematic views illustrating a manufacturing process of an optoelectronic semiconductor device according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of an optoelectronic semiconductor device according to another embodiment of the present invention.
Detailed Description
A conductive film, an optoelectronic semiconductor device, and a method for manufacturing the same according to preferred embodiments of the present invention will be described below with reference to the accompanying drawings, in which like elements are described with like reference numerals.
The optoelectronic semiconductor device of the present invention can be applied to a display panel, a billboard, a sensing device, a semiconductor device or a lighting device, and can be a monochrome or full-color display if the optoelectronic semiconductor device is a display. Fig. 1 is a flow chart illustrating a method for manufacturing an optoelectronic semiconductor device according to a preferred embodiment of the present invention.
As shown in fig. 1, the method for manufacturing an optoelectronic semiconductor device of the present invention may include: providing a matrix substrate, wherein the matrix substrate includes a substrate and a matrix circuit, and the matrix circuit is disposed on the substrate (step S01); providing a conductive film to be attached to the matrix circuit, wherein the conductive film includes a first film layer and a second film layer, the first film layer is disposed on the matrix circuit and has a plurality of conductive particles and an insulating material, the conductive particles are mixed in the insulating material, and the second film layer is an insulating layer and is disposed on the first film layer (step S02); disposing at least one micro-scale semiconductor device on the second film layer, wherein at least one electrode of the micro-scale semiconductor device faces the second film layer (step S03); pressing the micro-scale semiconductor device from the second film layer to the conductive particles of the first film layer at a first temperature and a first pressure for a first time (step S04); thereafter, raising the temperature to a second temperature while raising the pressure to a second pressure without relieving the pressure for a second time (step S05); and curing the first film layer and the second film layer, thereby electrically connecting the electrodes of the micro-scale semiconductor element to the matrix circuit in the vertical direction of the matrix substrate through a portion of the conductive particles (step S06).
Hereinafter, please refer to fig. 2A to fig. 2F to describe details of the steps S01 to S06. Fig. 2A to 2F are schematic diagrams of a manufacturing process of the optoelectronic semiconductor device 1 according to an embodiment of the present invention.
As shown in fig. 2A, first, a matrix substrate 11 is provided, in which the matrix substrate 11 includes a substrate 111 and a matrix circuit 112, and the matrix circuit 112 is disposed on the substrate 111 (step S01). The substrate 111 may be a light-transmissive material such as, but not limited to, glass, quartz or the like, plastic, rubber, fiberglass, or other polymer material. The substrate 111 may also be an opaque material, such as a metal-glass fiber composite plate, a metal-ceramic composite plate. In addition, the substrate 111 may be a hard board or a soft board. The Flexible board has flexibility (also called Flexible substrate), such as a Flexible printed circuit board, which may include organic polymer material, and is a thermoplastic material, such as but not limited to Polyimide (PI), Polyethylene (PE), polyvinyl chloride (PVC), Polystyrene (PS), acrylic, fluorinated polymer (Fluoropolymer), polyester (polyester) or nylon (nylon), etc., without any limitation. In addition, the matrix circuit 112 of the present embodiment may include a plurality of electrical connection pads D1, D2, and the electrical connection pads D1, D2 may be a group and are separately disposed. In addition, the matrix substrate 11 may be an active matrix (active matrix) substrate or a passive matrix (passive matrix) substrate according to the form of the matrix circuit 112 disposed on the substrate 111. For example, if the matrix substrate 11 is an active matrix substrate (TFT substrate) in a liquid crystal display device, it may be disposed with interlaced data lines, scan lines and a plurality of active devices (e.g., TFTs). Since the matrix circuit 112 and the driving technique of the active matrix substrate are well known and are not the focus of the present invention, those skilled in the art can find relevant matters and will not be further described herein.
Next, as shown in fig. 2B, a conductive film 12 is provided to be attached to the matrix circuit 112, wherein the conductive film 12 includes a first film 121 and a second film 122, the first film 121 is disposed on the matrix circuit 112 and has a plurality of conductive particles 1211 and an insulating material 1212, the conductive particles 1211 are mixed in the insulating material 1212, and the second film 122 is an insulating layer and is disposed on the first film 121 (step S02). The insulating material 1212 and the second film 122 both have adhesion, and at room temperature (for example, 25 ℃), the adhesion of the second film 122 is greater than that of the first film 121, the hardness of the second film 122 is less than that of the first film 121, and the adhesion of the second film 122 to glass at 25 ℃ to 50 ℃ needs to be greater than 1100 g/cm. Specifically, the second layer 122 has a larger adhesion than the first layer 121, and the second layer 122 is softer than the first layer 121, so that the micro-scale semiconductor device (fig. 2C) can be easily captured (adhered) by the conductive layer 12 when the micro-scale semiconductor device is disposed and pressed into the second layer 122. In addition, the first film 121 and the second film 122 are not cured during the transferring process, for example, after 4 minutes at 60 ℃, so that the process of adhering the micro-sized semiconductor device and transferring the micro-sized semiconductor device to the conductive film 12 can be smoothly performed. Furthermore, in some embodiments, the thickness of the first film layer 121 may be between 2.5 microns and 3.5 microns (2.5 μm ≦ 3.5 μm for the thickness of the first film layer 121), while the thickness of the second film layer 122 may be between 2 microns and 4 microns (2 μm ≦ 4 μm for the thickness of the second film layer 122, and the total thickness of the conductive film 12 is no greater than 6.5 microns (i.e., ≦ 6.5 μm).
In some embodiments, the conductive particles 1211 of the first film layer 121 may be made of a metal material, and the metal material may be, for example, but not limited to, gold, silver, copper, or tin, or an alloy thereof; alternatively, the conductive particles 1211 may be elastic particles covered with a metal layer, such as but not limited to nickel/gold. In some embodiments, the insulating material 1212 and the second film layer 122 of the first film layer 121 may include, for example, but not limited to, Epoxy glue or acryl glue. In some embodiments, the first film 121 and the second film 122 may be thermosetting materials, and thus will be cured and set under high temperature. In addition, the conductive particles 1211 of the present embodiment are disposed on the matrix circuit 112 at a position close to the same level in the direction (z direction) perpendicular to the matrix substrate 11, and the particles are not in contact with each other, but in different embodiments, the conductive particles 1211 may be randomly disposed in the insulating material 1212, and the present invention is not limited thereto.
Next, as shown in fig. 2C, at least one micro-scale semiconductor device 13 is disposed on the second film 122, wherein the at least one electrode E1 of the micro-scale semiconductor device 13 faces the second film 122 (step S03). Each of the micro-scale semiconductor devices 13 of the present embodiment includes two electrodes E1 and E2, and a plurality of micro-scale semiconductor devices 13 are separately disposed on the second film layer 122, such that the electrodes E1 and E2 of the micro-scale semiconductor devices 13 can respectively correspond to the electrical connection pads D1 and D2 on the matrix circuit 11. The micro-sized semiconductor devices 13 may be arranged in a straight row, a horizontal row, a matrix of rows and columns, or a polygon or an irregular shape, as required, without limitation. Furthermore, the dimension of each micro-sized semiconductor component 13 on a side is less than or equal to 150 micrometers, and may be, for example, between 1 micrometer and 150 micrometers (1 μm ≦ 150 μm on a side). In some embodiments, the micro-scale semiconductor devices 13 may have a size of 25 μm × 25 μm, and the minimum pitch between two adjacent micro-scale semiconductor devices 13 may be 1 micron or less, for example, and the invention is not limited thereto.
In addition, the micro-scale semiconductor device 13 may be a dual-electrode device (such as, but not limited to, a light emitting diode) or a triple-electrode device (such as a transistor). In this embodiment, the micro-sized semiconductor device 13 is exemplified by a micro light emitting diode (μ LED). The electrodes of the micro light emitting diode can be p-pole and n-pole on the same side (horizontal structure), or the p-pole and n-pole are respectively located on the upper and lower sides (vertical conduction or vertical structure). The micro-sized semiconductor device 13 of the present embodiment is exemplified by a horizontal-structured μ LED, and two electrodes E1 and E2 thereof correspond to a pair of electrical connection pads D1 and D2 on the matrix circuit 112, respectively. In addition, when the micro-sized semiconductor device 13 is a μ LED, it can be a blue light emitting diode, or a red, green, infrared or ultraviolet light emitting diode, or a combination thereof.
Next, as shown in fig. 2D, the micro-scale semiconductor device 13 is pressed from the second film 122 to the conductive particles 1211 of the first film 121 at a first temperature and a first pressure P1 for a first time (step S04). Wherein the first temperature can range between 50 ℃ and 80 ℃ (50 ℃ T1 ≦ 80 ℃), the first pressure P1 can range between 1MPa and 10MPa (1MPa P1 ≦ 10MPa), and the first time can range between 5 seconds and 40 seconds (5 seconds T1 ≦ 40 seconds). In some embodiments, the first temperature may be, for example, 50 ℃. Here, the first temperature, the first pressure P1 and the first time may be adjusted within the above ranges according to the process conditions.
When the micro-scale semiconductor device 13 is pressed against the conductive particles 1211 of the first film layer 121 by the first pressure P1, the first film layer 121 has low fluidity and is smaller than the second film layer 122, so that the conductive particles 1211 are not easily moved horizontally by the pressing, and the conductive particles 1211 does not short-circuit or conduct between the two electrodes E1 and E2 in the horizontal direction, but a part of the conductive particles 1211 is sandwiched between the electrodes E1 and E2 and the electrical connection pads D1 and D2.
Next, as shown in fig. 2E, the temperature is raised to the second temperature, while the pressure is raised to the second pressure P2 for a second time without pressure relief (step S05). Here, the pressure is increased to the second pressure P2(P2 > P1) without pressure relief (first pressure P1) to continue to apply pressure to the micro-scale semiconductor element 13, so that the electrodes E1 and E2 of the micro-scale semiconductor element 13 can be brought into full contact with the electrical connection pads D1 and D2, respectively, by the conductive particles 1211. Meanwhile, since the first film 121 and the second film 122 are thermosetting materials, the first film 121 and the second film 122 are gradually cured and formed at a high temperature (second temperature), so that the conductive film 12 can firmly catch (adhere) the micro-sized semiconductor device 13, and the electrodes E1 and E2 can completely contact the electrical connection pads D1 and D2 by the conductive particles 1211, respectively, to electrically connect the two.
In some embodiments, the second temperature is 140 ℃ or greater, which can range, for example, between 140 ℃ and 200 ℃ (140 ℃ T2 ≦ 200 ℃), while the second pressure P2 can range between 50MPa and 100MPa (50MPa P2 ≦ 100MPa), and the second time can range between 5 seconds and 60 seconds (5 seconds ≦ T2 ≦ 60 seconds). Here, the second temperature, the second pressure P2 and the second time may be adjusted within the above ranges according to the process conditions.
Finally, as shown in fig. 2F, after a certain period of time (i.e., after a second period of time), the first film 121 and the second film 122 are cured, so that the electrode E1 of the micro-scale semiconductor device 13 is electrically connected to the matrix circuit 112 through a portion of the conductive particles 1211 in the vertical direction of the matrix substrate 11 (step S06).
Therefore, the optoelectronic semiconductor device 1 of the present embodiment may include a matrix substrate 11, a conductive film 12, and a plurality of micro-sized semiconductor elements 13. The matrix substrate 11 has a substrate 111 and a matrix circuit 112, and the matrix circuit 112 is provided over the substrate 111. The conductive film 12 includes a first film 121 and a second film 122, the first film 121 is disposed on the matrix circuit 112 and has a plurality of conductive particles 1211 and an insulating material 1212, the conductive particles 1211 are mixed in the insulating material 1212, and the second film 122 is an insulating layer and is disposed on the first film 121. The micro-scale semiconductor elements 13 are at least partially disposed in the conductive film 12, wherein each micro-scale semiconductor element 13 has two electrodes E1, E2, respectively, and the electrodes E1, E2 are electrically connected to the electrical connection pads D1, D2 of the matrix circuit 112 in the vertical direction of the matrix substrate 11 through the conductive particles 1211 of the conductive film 12.
In view of the above, in the optoelectronic semiconductor device 1 of the present embodiment, the electrodes E1 and E2 of the micro-scale semiconductor element 13 can be electrically connected to the matrix circuit 112 respectively by using the conductive film 12 in the vertical direction, so that the problem that the micro-scale semiconductor element 13 is too small to be electrically connected to the matrix circuit by the conventional wire bonding or eutectic bonding process can be solved. In addition, compared to the conventional transposing and bonding techniques, the process of the optoelectronic semiconductor device 1 of the present embodiment is also simple and fast, and can be applied to different fields according to design requirements, and at the same time, has lower manufacturing time and cost. Furthermore, due to the relatively small dimensions of the microsized semiconductor components 13, the packing density thereof may be relatively high, so that the optoelectronic semiconductor device 1 produced may have a relatively high resolution, and is therefore particularly suitable for producing high-resolution displays, such as VR or AR head-mounted displays.
FIG. 3 is a schematic diagram of an optoelectronic semiconductor device 1a according to another embodiment of the present invention. As shown in fig. 3, the optoelectronic semiconductor device 1a of the present embodiment is mainly different from the optoelectronic semiconductor device 1 of fig. 2F in that the micro-scale semiconductor element 13a of the present embodiment is exemplified by a vertical-structured μ LED. Therefore, only one electrode E1 is electrically connected to the matrix circuit 112 in the vertical direction of the matrix substrate 11 through the partially conductive particles 1211 of the conductive film 12 (the other electrode E2 may be electrically connected to other circuits through other processes, but is not limited thereto). In addition, other technical features of the optoelectronic semiconductor device 1a and the manufacturing method thereof can refer to the same components of the optoelectronic semiconductor device 1 and the manufacturing method thereof, and are not described herein again.
In summary, in the conductive film, the optoelectronic semiconductor device and the manufacturing method thereof of the present invention, the electrode of the micro-scale semiconductor element can be electrically connected to the matrix circuit by using the vertical conductive film, so that the problem that the micro-scale semiconductor element is too small to be electrically connected to the matrix circuit by the conventional wire bonding or eutectic bonding process can be solved. In addition, compared with the conventional transposing and bonding technology, the process of the optoelectronic semiconductor device of the present invention is also simple and fast, and can be applied to different fields according to design requirements, and meanwhile, the manufacturing time and the manufacturing cost are also low.
The foregoing is illustrative only and is not limiting. It is intended that all equivalent modifications or variations not departing from the spirit and scope of the present invention shall be included in the appended claims.
Claims (10)
1. A conductive film for use with at least one micro-scale semiconductor device and a matrix substrate, the matrix substrate having a substrate and a matrix circuit, the matrix circuit being disposed on the substrate, the conductive film comprising:
a first film layer disposed on the matrix circuit and having a plurality of conductive particles and an insulating material, the conductive particles being mixed in the insulating material; and
the second film layer is an insulating layer and is arranged on the first film layer;
wherein at least a part of the micro-scale semiconductor component is positioned in the conductive film and is provided with at least one electrode which is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through a part of the conductive particles;
the first film layer and the second film layer are made of thermosetting materials, and at room temperature, the fluidity of the second film layer is greater than that of the first film layer, the adhesion of the second film layer is greater than that of the first film layer, and the hardness of the second film layer is less than that of the first film layer;
wherein the thickness of the first film layer is between 2.5 microns and 3.5 microns, the thickness of the second film layer is between 2 microns and 4 microns, and the total thickness of the conductive film is not greater than 6.5 microns.
2. The conductive film of claim 1, wherein the adhesion of the second film layer to glass between 25 ℃ and 50 ℃ is greater than 1100 g/cm.
3. The conductive film of claim 1, wherein neither the first nor the second film layer cures at 60 ℃ for 4 minutes.
4. An optoelectronic semiconductor device, comprising:
a matrix substrate having a substrate and a matrix circuit, the matrix circuit being provided on the substrate;
a conductive film, comprising:
a first film layer disposed on the matrix circuit and having a plurality of conductive particles and an insulating material, the conductive particles being mixed in the insulating material; and
the second film layer is an insulating layer and is arranged on the first film layer; and
at least one micro-scale semiconductor component at least partially disposed within the conductive film, the micro-scale semiconductor component having at least one electrode electrically connected to the matrix circuit in a vertical direction of the matrix substrate through a portion of the conductive particles;
the first film layer and the second film layer are made of thermosetting materials, and at room temperature, the fluidity of the second film layer is greater than that of the first film layer, the adhesion of the second film layer is greater than that of the first film layer, and the hardness of the second film layer is less than that of the first film layer;
wherein the thickness of the first film layer is between 2.5 microns and 3.5 microns, the thickness of the second film layer is between 2 microns and 4 microns, and the total thickness of the conductive film is not greater than 6.5 microns.
5. The optoelectronic semiconductor device of claim 4, wherein the adhesion of the second film layer to glass between 25 ℃ and 50 ℃ is greater than 1100 g/cm.
6. The optoelectronic semiconductor device of claim 4, wherein neither the first nor the second film layer cures at 60 ℃ for 4 minutes.
7. The optoelectronic semiconductor device of claim 4, wherein the micro-scale semiconductor component has a side dimension of 150 μm or less.
8. A method of manufacturing an optoelectronic semiconductor device, comprising:
providing a matrix substrate, wherein the matrix substrate comprises a substrate and a matrix circuit, and the matrix circuit is arranged on the substrate;
providing a conductive film which is attached to the matrix circuit, wherein the conductive film comprises a first film layer and a second film layer, the first film layer is arranged on the matrix circuit and is provided with a plurality of conductive particles and insulating materials, the conductive particles are mixed in the insulating materials, and the second film layer is an insulating layer and is arranged on the first film layer; the first film layer and the second film layer are made of thermosetting materials, and at room temperature, the fluidity of the second film layer is greater than that of the first film layer, the adhesion of the second film layer is greater than that of the first film layer, and the hardness of the second film layer is less than that of the first film layer;
disposing at least one micro-scale semiconductor device on the second film layer, wherein at least one electrode of the micro-scale semiconductor device faces the second film layer;
pressing the micro-scale semiconductor assembly from the second film layer to the conductive particles of the first film layer at a first temperature and a first pressure for a first time;
raising the temperature to a second temperature while raising the pressure to a second pressure for a second time without relieving the pressure; and
curing the first film layer and the second film layer, thereby electrically connecting the electrodes of the micro-scale semiconductor assembly with the matrix circuit in a vertical direction of the matrix substrate through a portion of the conductive particles;
wherein the thickness of the first film layer is between 2.5 microns and 3.5 microns, the thickness of the second film layer is between 2 microns and 4 microns, and the total thickness of the conductive film is not greater than 6.5 microns.
9. The manufacturing method according to claim 8, characterized in that the first temperature ranges between 50 ℃ and 80 ℃, the first pressure between 1MPa and 10MPa, the first time between 5 seconds and 40 seconds.
10. The manufacturing method according to claim 8, characterized in that the second temperature ranges between 140 ℃ and 200 ℃, the second pressure between 50MPa and 100MPa, and the second time between 5 seconds and 60 seconds.
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| Application Number | Priority Date | Filing Date | Title |
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| TW107101582 | 2018-01-16 | ||
| TW107101582A TWI755470B (en) | 2018-01-16 | 2018-01-16 | Conductive film, optoelectronic semiconductor device and manufacturing method of the same |
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| JP2003204142A (en) * | 2002-01-08 | 2003-07-18 | Sumitomo Metal Micro Devices Inc | Electronic component-mounting method and apparatus thereof |
| CN101601171A (en) * | 2007-07-03 | 2009-12-09 | 索尼化学&信息部件株式会社 | Anisotropic conductive film and its manufacture method and conjugant |
| CN103069656A (en) * | 2011-04-06 | 2013-04-24 | 迪睿合电子材料有限公司 | Anisotropic conductive film, method for producing connected body, and connected body |
| CN107527930A (en) * | 2016-06-17 | 2017-12-29 | 优显科技股份有限公司 | Optoelectronic semiconductor device |
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| JP2008210908A (en) * | 2007-02-26 | 2008-09-11 | Tokai Rubber Ind Ltd | Method for mounting electronic component |
| JP5398455B2 (en) * | 2009-09-30 | 2014-01-29 | デクセリアルズ株式会社 | Anisotropic conductive film and manufacturing method thereof |
| DE102010039728A1 (en) * | 2010-08-25 | 2012-03-01 | Robert Bosch Gmbh | Method for producing an electrical circuit and electrical circuit |
| US9698134B2 (en) * | 2014-11-27 | 2017-07-04 | Sct Technology, Ltd. | Method for manufacturing a light emitted diode display |
| KR102634024B1 (en) * | 2015-03-09 | 2024-02-07 | 가부시끼가이샤 레조낙 | Manufacturing method of connection structure |
| JP6776609B2 (en) * | 2016-02-22 | 2020-10-28 | デクセリアルズ株式会社 | Anisotropic conductive film |
| JP2017157724A (en) * | 2016-03-02 | 2017-09-07 | デクセリアルズ株式会社 | Display apparatus and manufacturing method of the same, light emitting apparatus, and manufacturing method of the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003204142A (en) * | 2002-01-08 | 2003-07-18 | Sumitomo Metal Micro Devices Inc | Electronic component-mounting method and apparatus thereof |
| CN101601171A (en) * | 2007-07-03 | 2009-12-09 | 索尼化学&信息部件株式会社 | Anisotropic conductive film and its manufacture method and conjugant |
| CN103069656A (en) * | 2011-04-06 | 2013-04-24 | 迪睿合电子材料有限公司 | Anisotropic conductive film, method for producing connected body, and connected body |
| CN107527930A (en) * | 2016-06-17 | 2017-12-29 | 优显科技股份有限公司 | Optoelectronic semiconductor device |
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| TW201933580A (en) | 2019-08-16 |
| JP2019125780A (en) | 2019-07-25 |
| CN110047990A (en) | 2019-07-23 |
| JP6688374B2 (en) | 2020-04-28 |
| TWI755470B (en) | 2022-02-21 |
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Effective date of registration: 20220615 Address after: Japan Tochigi Patentee after: DEXERIALS Corp. Address before: Xinyi District of Taiwan city of Taipei Chinese Road 5 No. 1 1 13 floor Patentee before: ULTRA DISPLAY TECHNOLOGY Corp. |