CN110021613B - 图像传感器中的垫和接地的自对准 - Google Patents

图像传感器中的垫和接地的自对准 Download PDF

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CN110021613B
CN110021613B CN201811396453.5A CN201811396453A CN110021613B CN 110021613 B CN110021613 B CN 110021613B CN 201811396453 A CN201811396453 A CN 201811396453A CN 110021613 B CN110021613 B CN 110021613B
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semiconductor material
metal
disposed
trench
contact pad
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CN110021613A (zh
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王勤
陈刚
毛杜立
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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  • Solid State Image Pick-Up Elements (AREA)

Abstract

本申请案涉及图像传感器中的垫与接地的自对准。一种图像传感器包含：多个光电二极管，其安置于半导体材料中，以将图像光转换成图像电荷；以及金属网格，其包含与所述金属网格共面的金属护罩，安置成接近于所述半导体材料的后侧。所述金属网格与所述多个光电二极管光学对准，以将所述图像光引导到所述多个光电二极管中，且接触垫安置于所述半导体材料中的沟槽中。所述接触垫耦合到所述金属护罩，来使所述金属护罩接地。

Description

图像传感器中的垫和接地的自对准
技术领域
本公开大体上涉及半导体制造，且明确地而非排它地说，涉及CMOS图像传感器。
背景技术
图像传感器已变得随处可见。它们广泛用于数字静态照相机、蜂窝式电话、安全性相机，以及医学、汽车和其它应用。用来制造图像传感器的技术已经以大步调持续发展。举例来说，对较高分辨率和较低功耗的需求已促进了这些装置的进一步小型化和集成。
典型的图像传感器操作如下。来自外部场景的图像光入射于图像传感器上。图像传感器包含多个光敏元件，使得每个光敏元件吸收入射图像光的一部分。包含在图像传感器中的例如光电二极管等光敏元件各自在吸收图像光之后产生图像电荷。所产生的图像电荷的量与图像光的强度成比例。所产生的图像电荷可用于产生表示外部场景的图像。
一般来说，图像传感器可包含多种电连接和触点来为图像传感器供电，从图像传感器读出图像数据，或控制图像传感器。形成这些触点可能是繁琐的过程，且可花费许多额外制造步骤。
发明内容
本申请案的一个实施例涉及一种图像传感器。所述图像传感器包括：多个光电二极管，其安置在半导体材料中，以将图像光转换成图像电荷；金属网格，其包含金属护罩，所述金属护罩与所述金属网格共面，安置成接近于所述半导体材料的后侧，其中所述金属网格与所述多个光电二极管光学对准，以将图像光引导到所述多个光电二极管；以及接触垫，其安置在所述半导体材料中的沟槽中，且其中所述接触垫耦合到所述金属护照来使所述金属护罩接地。
本申请案的另一实施例涉及一种图像传感器制造方法。所述方法包括：提供半导体材料，所述半导体材料包含：多个光电二极管，其安置在所述半导体材料中，且位于阵列中；以及控制电路和读出电路，其安置在所述半导体材料中，且定位成接近于所述阵列；在所述半导体材料中蚀刻沟槽；将接触垫沉积在所述半导体材料中的所述沟槽中；形成金属网格，其包含与所述金属网格共面的金属护罩，安置成接近于所述半导体材料的后侧，其中所述金属网格与所述多个光电二极管光学对准，以将图像光引导到所述多个光电二极管中；以及将所述金属护罩耦合到所述接触垫。
附图说明
参考以下图式描述本发明的非限制性且非穷尽性的实例，其中除非另外指定，否则遍布各图的相同的参考标号指代相同的部分。
图1A到1G说明根据本公开的教示的图像传感器制造方法。
图2说明根据本公开的教示的可包含图1A到1G的方面的成像***的一个实例的框图。
对应参考标号在图式的若干视图中始终指示对应组件。熟练的技术人员应了解，图中的元件仅为简单和清晰起见而进行说明，但不一定按比例绘制。举例来说，图中的一些元件的尺寸可能相对于其它元件夸示以有助于改进对本发明的各种实施例的理解。并且，通常未描绘在商业可行的实施例中有用或必需的常见但众所周知的元件，以便促进本发明的这些各种实施例的遮挡较少的视图。
具体实施方式
本文中描述与图像传感器中的后侧垫和接地的自对准有关的设备和方法的实例。在以下描述中，陈述众多具体细节来提供对具体实例的透彻理解。然而，相关领域的技术人员将认识到；可在没有所述具体细节中的一或一者以上的情况下或使用其它方法、组件、材料等来实践本文所述的技术。在其它情况下，未图示或详细描述众所周知的结构、材料或操作以免使某些方面混淆。
在本说明书通篇中参考“一个实例”或“一个实施例”指的是结合实例描述的特定特征、结构或特性包含于本发明的至少一个实例中。因此，贯穿本说明书在不同位置中出现短语“在一个实例中”或“在一个实施例中”未必都是指同一个实例。此外，在一或多个实例中，特定特征、结构或特性可以任何合适方式组合。
本公开的实施例大体上涉及简化为图像传感器形成金属触点所需的过程流。对于背侧照明式(BSI)产品，当前工艺需要许多光刻和蚀刻步骤来形成后侧接地/接触垫、金属网格和金属护罩。成本较高，且周期时间较长。此外，传感器的后侧可能不接地，因为从金属护罩到接触垫不存在连接。
根据本公开的教示的实例引入自对准蚀刻和化学机械抛光(CMP)步骤来以仅三个遮蔽步骤来实现类似的装置架构(例如接地后侧、金属网格、金属护罩和铝接触垫)。此外，可使用平坦表面来实施后侧接地，这改进了之后的微透镜和彩色滤光片工艺的结果。如图1A到1G的论述中将示出，为了实现此自对准接触垫，工艺可利用因为垫开口以及由铝沉积涂覆的沟槽侧壁造成的阶梯高度差异。
图1A到1G说明根据本公开的教示的图像传感器制造方法。具有本公开的权益的所属领域的技术人员将理解，图1A到1G可按任何次序且甚至并行地发生。此外，根据本公开的教示，可向方法加入图式或从方法移除图式。
图1A示出提供包含安置于半导体材料101中且位于阵列中的多个光电二极管103的半导体材料101(例如硅)。氧化物111(例如氧化硅)安置于半导体材料101的后侧153上。半导体材料101中还包含控制电路和读出电路181，其定位成接近于所述阵列。在一个实例中，控制电路和读出电路181安置于光电二极管103阵列的一个、多个或所有侧上。光电二极管103安置成接近于半导体材料101的与前侧151相对的后侧153。氧化物材料109也安置于半导体材料101的前侧151上，且金属互连件105安置于氧化物材料109上。
还描绘安置成接近于前侧151的浅沟槽隔离结构107。可通过在半导体材料101的前侧151中蚀刻沟槽，并用氧化物、经掺杂半导体等回填所述沟槽来形成浅沟槽隔离结构107。在所描绘的实例中，金属互连件105在横向方向上稍微大于浅沟槽隔离结构107。此外，在一个实例中，金属互连件105仅安置成接近于浅沟槽隔离结构107中的一些但非全部(例如右侧示出的第二浅沟槽隔离结构107)。
图1B说明两个单独的蚀刻步骤：蚀刻到半导体材料101中，从后侧153穿过氧化物111到浅沟槽隔离结构107；以及蚀穿浅沟槽隔离结构107和氧化物材料109(例如SiO2、HfOx等)到触点金属互连件105。如所示出，可存在蚀穿氧化物材料109到金属互连件105(例如铜)的一或多个触点插塞洞。在一个实例中，在蚀刻较大的第二沟槽(右)之前，创建蚀刻到金属互连件105的洞。然而，在其它实施例中在蚀刻较大的第二沟槽之后蚀刻较小的洞。应了解，虽然此处仅描绘两个洞，但根据本公开的教示，可存在任何数目的触点插塞洞。
图1C描绘将接触垫沉积在半导体材料中的沟槽(第一沟槽(左)和第二沟槽(右)两者)中。这包含沉积第一铝层121(例如厚度为2K埃)和第二铝层125(例如厚度为25K埃)。安置于第一铝层121与第二铝层125之间的是第一TiN层123。安置于第二铝层125上的是第二TiN层127。还描绘沉积在铝层121和125中的凹部中的硬掩模氧化物129。铝中的凹部形成于蚀刻到半导体材料101中的沟槽上方。因此，第二铝层125安置于第一TiN层123与第二TiN层127之间，且第二TiN层127部分安置于硬掩模氧化物129下方。如图所示，第一铝层121(金属层)从接触垫沿半导体材料101中的沟槽的侧壁延伸到将成为金属护罩的铝的一部分。第一铝层121从接触垫延续到第一铝层121的将成为金属护罩的部分。应了解，可在沉积之后执行化学机械抛光步骤，去除过多氧化物129，且暴露第二TiN层127(例如光电二极管103上方)。
并且，一或多个触点插塞(以沉积在第二沟槽中的铝制成)延伸穿过半导体材料101和氧化物材料109，且一或多个触点插塞触点金属互连件105安置于氧化物材料109上。
图1D示出图1C中所沉积的装置架构的蚀刻掉部分。更具体地，第二TiN层127的一部分和第二铝层125的一部分被蚀刻掉，留下硬掩模氧化物129的若干部分。蚀刻在第一TiN层123上终止。
在所描绘的实例中，SiON层131和硬掩模氧化物层133沉积在第二铝层125的经蚀刻表面之上。如所说明，在(安置于沟槽上方的)第二TiN层127的表面上的是第一硬掩模氧化物层129、SiON层131和第二硬掩模层133。如所示出，SiON层131和第二硬掩模层133跨半导体材料101的整个表面连续。
图1E说明将光致抗蚀剂层171沉积在晶片的表面上，以便蚀刻掉层堆叠的若干部分，且限定金属网格(例如图1F中的金属网格191)和金属护罩(例如图1F中的金属护罩193)的特征。在所描绘的实例中，已经去除了光致抗蚀剂层171的若干部分来限定何处将发生蚀刻。在一些实例中，光致抗蚀剂层171可为负性抗蚀剂或正性抗蚀剂。此外，本文所描绘的蚀刻步骤中的任一者可为根据本公开的教示的干式蚀刻或湿式蚀刻。
图1F描绘蚀刻由光致抗蚀剂层171限定的部分，以形成金属网格191和金属护罩193。这包含蚀刻掉硬掩模氧化物133、SiON层131和第一TiN层123的至少一部分，以形成金属网格191。金属网格191和金属护罩193包含SiON层131、第一TiN 123(安置于半导体材料101与SiON层131之间)和第一铝层121(安置于TiN层123与半导体材料101之间)。如所示出，金属护罩193与金属网格191大体上共面(例如两者在装置架构的同一平面内)。
在所描绘的实例中，蚀刻步骤去除第二接触垫(右)的若干部分，且留下横向安置于第二接触垫和半导体材料101的两侧之间的气隙。应了解，第一接触焊垫(左)借助于连续的第一铝层121电耦合到金属护罩193，所述第一铝层从垫沿沟槽的侧壁向上延伸到金属护罩193。
图1G示出沉积氧化层141和143(例如透明的氧化物，如SiO2)以填充在金属网格191中的间隙中。还描绘残余氧化物141和143从SiON层131和第二TiN层127的CMP去除。接着，经由蚀刻将第二TiN层127从接触垫的顶部去除。这使铝接触垫暴露。因此，图1G描绘几乎完整的图像传感器100。应了解，所述接触垫两者包含安置于沟槽中的材料层。
在所说明实例中，多个光电二极管103横向安置于第一沟槽(左)与第二沟槽(右)之间。此外，金属网格191与光电二极管103光学对准，使得光从金属网格191反射出来并进入光电二极管103中，从而防止光学交叉干扰。还示出已经部分填充有氧化物143的第二接触垫的侧面上的气隙。
如所说明的控制电路和读出电路181位于光电二极管103的阵列的***上。金属护罩193至少部分地安置于控制电路和读出电路181上方，使得金属护罩193定位成防止图像光进入控制电路和读出电路181。在一个实例中，控制电路控制多个光电二极管的操作，且读出电路从多个光电二极管103读出图像电荷。在一些实例中，金属护罩193以电气方式和/或以物理方式耦合到金属网格191。
在所描绘的实例中，彩色滤光片阵列和微透镜层尚未形成，且从图中省略，以便避免混淆本公开的某些方面。然而，在后续步骤中，微透镜层可安置于金属网格上方，使得微透镜将光聚焦到金属网格中的间隙中，且聚焦到光电二极管中。此外，彩色滤光片阵列可安置于微透镜层与多个光电二极管103之间。彩色滤光片阵列可包含蓝色、绿色、红色、透明和/或红外滤光片，且可以拜耳模式、EXR模式、X-Trans模式等排列。彩色滤光片阵列可由染色聚合物制成。类似地，可通过使聚合物块暴露，且接着熔化和回焊所述块以形成微透镜的特性拱顶类结构，将微透镜形成于彩色滤光片阵列上。
图2说明根据本公开的教示的可包含图1A到1G的方面的成像***200的一个实例的框图。成像***200包含像素阵列205、控制电路221、读出电路211和功能逻辑215。在一个实例中，像素阵列205是光电二极管的二维(2D)阵列，或图像传感器像素(例如像素P1、P2……、Pn)。如所说明，将光电二极管排列成行(例如行R1到Ry)和列(例如列C1到Cx)，以获取人、位置、物体等的图像数据，其可接着用以渲染所述人、位置、物体等的2D图像。然而，光电二极管不必排列成行和列，且可采取其它配置。
在一个实例中，在像素阵列205中的每一图像传感器光电二极管/像素已获取其图像数据或图像电荷之后，读出电路211读出所述图像数据，且接着传送到功能逻辑215。在各种实例中，读出电路211可包含放大电路、模/数(ADC)转换电路或其它。功能逻辑215可简单地存储图像数据，或者甚至通过应用后期图像效果(例如自动对焦、修剪、旋转、去除红眼、调整亮度、调整对比度或其它效果)来操纵图像数据。在一个实例中，读出电路211可沿(所说明)读出列线一次读出一行图像数据，或可使用多种其它技术(未说明)来读出图像数据，所述技术例如串行读出或同时完全并行读出所有像素。
在一个实例中，控制电路221耦合到像素阵列205，以控制像素阵列205中的多个光电二极管的操作。举例来说，控制电路221可产生用于控制图像获取的快门信号。在所描绘的实例中，快门信号是用于在单个获取窗期间，同时使得像素阵列205内的所有像素能够同时捕获其相应图像数据的全局快门信号。在另一实例中，图像获取与例如闪光等照明效果同步。
在一个实例中，成像***200可包含在数码相机、手机、膝上型计算机、汽车等中。另外，成像***200可耦合到硬件的其它件，例如处理器(通用或另外)、存储器元件、输出(USB端口、无线发射器、HDMI端口等)、照明设备/闪光灯、电输入(键盘、触摸显示器、轨迹垫、鼠标、麦克风等)和/或显示器。硬件的其它件可将指令递送到成像***200，从成像***200提取图像数据或操纵由成像***200供应的图像数据。
对本发明的所说明的实例的以上描述(包含摘要中所描述的内容)无意为穷尽性的或将本发明限制于所公开的精确形式。虽然本文中出于说明性目的描述了本发明的具体实例，但在本发明的范围内，各种修改是可能的，如相关领域的技术人员将认识到。
可鉴于以上详细描述对本发明作出这些修改。所附权利要求书中使用的术语不应被解释为将本发明限于本说明书中所公开的具体实例。确切地说，本发明的范围应完全由所附权利要求书确定，应根据权利要求解释的已确立的原则来解释所附权利要求书。

Claims (19)

1.一种图像传感器，其包括：
多个光电二极管，其安置于半导体材料中，以将图像光转换成图像电荷；
金属网格，其包含与所述金属网格共面的金属护罩，安置成接近于所述半导体材料的后侧，其中所述金属网格与所述多个光电二极管光学对准，以将所述图像光引导到所述多个光电二极管中；
接触垫，其安置于所述半导体材料中的沟槽中，且其中所述接触垫耦合到所述金属护罩来使所述金属护罩接地；
第二沟槽，其安置于所述半导体材料中；以及
第二接触垫，其安置于所述第二沟槽中，其中所述第二接触垫包含：
一或多个触点插塞，其延伸穿过所述半导体材料以及安置成接近于所述半导体材料的与所述后侧相对的前侧的氧化物材料，其中所述一或多个触点插塞接触安置于所述氧化物材料上的金属互连件。
2.根据权利要求1所述的图像传感器，其中金属层从所述接触垫沿所述半导体材料中的所述沟槽的侧壁延伸到所述金属护罩，其中所述金属层从所述接触垫延续到所述金属护罩。
3.根据权利要求1所述的图像传感器，其进一步包括至少部分地安置在所述半导体材料中的控制电路和读出电路，其中所述控制电路控制所述多个光电二极管的操作，且其中所述读出电路从所述多个光电二极管读出图像电荷。
4.根据权利要求3所述的图像传感器，其中所述控制电路和所述读出电路至少部分安置在所述金属护罩下面，使得所述金属护罩定位成阻止图像光进入所述控制电路和所述读出电路。
5.根据权利要求1所述的图像传感器，其进一步包括：
浅沟槽隔离，其安置成接近于所述接触垫和所述金属互连件之间的所述前侧，其中所述金属互连件在横向方向上大于所述浅沟槽隔离。
6.根据权利要求1所述的图像传感器，其中所述多个光电二极管横向安置于所述沟槽与所述第二沟槽之间。
7.根据权利要求1所述的图像传感器，其中所述一或多个触点插塞包含铝，且所述金属互连件包含铜。
8.根据权利要求1所述的图像传感器，其中所述金属网格和所述金属护罩包含：
SiON层；
TiN层，其安置于所述半导体材料与所述SiON层之间；以及
铝层，其安置于所述TiN层与所述半导体材料之间。
9.根据权利要求8所述的图像传感器，其中所述TiN层从所述接触垫沿所述半导体材料中的所述沟槽的侧壁延伸到所述金属护罩，其中所述TiN层从所述接触垫延续到所述金属护罩。
10.根据权利要求9所述的图像传感器，其进一步包括安置于所述沟槽和所述第二沟槽中的浅沟槽隔离结构。
11.一种图像传感器制造方法，其包括：
提供半导体材料，其包含：
多个光电二极管，其安置于所述半导体材料中且安置于阵列中；以及
控制电路和读出电路，其安置于所述半导体材料中，且定位成接近于所述阵列；
在所述半导体材料中蚀刻沟槽；
在所述半导体材料中的所述沟槽中沉积接触垫；
形成金属网格，其包含与所述金属网格共面的金属护罩，安置成接近于所述半导体材料的后侧，其中所述金属网格与所述多个光电二极管光学对准，以将图像光引导到所述多个光电二极管中；
将所述金属护罩耦合到所述接触垫；
将第二沟槽蚀刻到所述半导体材料中；以及
在所述第二沟槽中形成第二接触垫，其中所述第二接触垫包含：
一或多个触点插塞，其延伸穿过所述半导体材料以及安置成接近于所述半导体材料的与所述后侧相对的前侧的氧化物材料，其中所述一或多个触点插塞接触安置于所述氧化物材料上的金属互连件。
12.根据权利要求11所述的方法，其中将所述金属护罩耦合到所述接触垫包含沉积金属层，其从所述接触垫沿所述半导体材料中的所述沟槽的侧壁延伸到所述金属护罩，其中所述金属层从所述接触垫延续到所述金属护罩。
13.根据权利要求12所述的方法，其中在所述半导体材料的所述沟槽中沉积接触垫包含在所述沟槽中沉积铝和TiN。
14.根据权利要求13所述的方法，其进一步包括将SiON和硬掩模氧化物沉积在所述铝和所述TiN上。
15.根据权利要求14所述的方法，其中形成所述金属网格包含将光致抗蚀剂沉积在所述硬掩模氧化物上，其中所述光致抗蚀剂用以限定所述金属网格和金属护罩的特征。
16.根据权利要求15所述的方法，其进一步包括蚀刻掉所述硬掩模氧化物、所述SiON和所述TiN的至少一部分以形成所述金属网格，其中所述金属网格和所述金属护罩包含所述SiON、安置于所述半导体材料与所述SiON之间的所述TiN，以及安置于所述TiN与所述半导体材料之间的所述铝。
17.根据权利要求11所述的方法，其中所述多个光电二极管横向安置于所述沟槽与所述第二沟槽之间。
18.根据权利要求11所述的方法，其中所述一或多个触点插塞包含铝，且所述金属互连件包含铜。
19.根据权利要求11所述的方法，其进一步包括蚀刻所述第二接触垫的一部分，以形成所述半导体材料与所述第二接触垫之间的气隙。
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