CN110021608A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN110021608A CN110021608A CN201810992333.5A CN201810992333A CN110021608A CN 110021608 A CN110021608 A CN 110021608A CN 201810992333 A CN201810992333 A CN 201810992333A CN 110021608 A CN110021608 A CN 110021608A
- Authority
- CN
- China
- Prior art keywords
- insulating element
- laminate
- semiconductor storage
- insulating
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 title claims abstract description 115
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 11
- 238000003475 lamination Methods 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 198
- 238000005304 joining Methods 0.000 description 44
- 239000011229 interlayer Substances 0.000 description 29
- 230000000694 effects Effects 0.000 description 13
- 238000010276 construction Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-001537 | 2018-01-09 | ||
JP2018001537A JP2019121717A (ja) | 2018-01-09 | 2018-01-09 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110021608A true CN110021608A (zh) | 2019-07-16 |
CN110021608B CN110021608B (zh) | 2024-03-08 |
Family
ID=67140880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810992333.5A Active CN110021608B (zh) | 2018-01-09 | 2018-08-29 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US10896915B2 (zh) |
JP (1) | JP2019121717A (zh) |
CN (1) | CN110021608B (zh) |
TW (1) | TWI689088B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112530961A (zh) * | 2019-09-19 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019212689A (ja) | 2018-05-31 | 2019-12-12 | 東芝メモリ株式会社 | 半導体メモリ |
KR20200076393A (ko) * | 2018-12-19 | 2020-06-29 | 삼성전자주식회사 | 3차원 반도체 메모리 소자 |
JP2020150199A (ja) * | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
JP7447152B2 (ja) * | 2019-08-30 | 2024-03-11 | 長江存儲科技有限責任公司 | 接着層によって連結されるソースコンタクトを伴う三次元メモリデバイス、およびそれを形成するための方法 |
KR20210086098A (ko) * | 2019-12-31 | 2021-07-08 | 삼성전자주식회사 | 집적회로 소자 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110180866A1 (en) * | 2010-01-25 | 2011-07-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
US20130130495A1 (en) * | 2011-11-21 | 2013-05-23 | Masaaki Higashitani | Method For Fabricating A Metal Silicide Interconnect In 3D Non-Volatile Memory |
US20130126957A1 (en) * | 2011-11-21 | 2013-05-23 | Masaaki Higashitani | 3D Non-Volatile Memory With Metal Silicide Interconnect |
US20150318301A1 (en) * | 2014-05-02 | 2015-11-05 | Joonhee Lee | Semiconductor memory device and method of fabricating the same |
CN105374825A (zh) * | 2014-08-13 | 2016-03-02 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
US20160268263A1 (en) * | 2015-03-11 | 2016-09-15 | SK Hynix Inc. | Semiconductor device and manufacturing method thereof |
US20160365352A1 (en) * | 2015-06-15 | 2016-12-15 | SanDisk Technologies, Inc. | Passive devices for integration with three-dimensional memory devices |
US20170256559A1 (en) * | 2016-03-04 | 2017-09-07 | SK Hynix Inc. | Semiconductor device and manufacturing method for the same |
US20170271347A1 (en) * | 2016-03-15 | 2017-09-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP5364336B2 (ja) | 2008-11-04 | 2013-12-11 | 株式会社東芝 | 半導体記憶装置 |
JP2015028989A (ja) | 2013-07-30 | 2015-02-12 | 株式会社東芝 | 不揮発性記憶装置 |
TWI538106B (zh) * | 2013-12-31 | 2016-06-11 | 旺宏電子股份有限公司 | 三維記憶體及其製造方法 |
JP2015149413A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP6290022B2 (ja) * | 2014-07-17 | 2018-03-07 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
KR20170028731A (ko) * | 2015-09-04 | 2017-03-14 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
US10403636B2 (en) * | 2016-03-11 | 2019-09-03 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
US9853050B2 (en) * | 2016-03-14 | 2017-12-26 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
KR102610403B1 (ko) * | 2016-05-04 | 2023-12-06 | 에스케이하이닉스 주식회사 | 3차원 구조의 반도체 메모리 장치 및 그 제조방법 |
-
2018
- 2018-01-09 JP JP2018001537A patent/JP2019121717A/ja active Pending
- 2018-08-10 TW TW107127966A patent/TWI689088B/zh active
- 2018-08-29 CN CN201810992333.5A patent/CN110021608B/zh active Active
- 2018-09-11 US US16/127,512 patent/US10896915B2/en active Active
-
2020
- 2020-12-11 US US17/119,095 patent/US11557605B2/en active Active
-
2022
- 2022-12-13 US US18/065,298 patent/US20230113904A1/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110180866A1 (en) * | 2010-01-25 | 2011-07-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
US20130130495A1 (en) * | 2011-11-21 | 2013-05-23 | Masaaki Higashitani | Method For Fabricating A Metal Silicide Interconnect In 3D Non-Volatile Memory |
US20130126957A1 (en) * | 2011-11-21 | 2013-05-23 | Masaaki Higashitani | 3D Non-Volatile Memory With Metal Silicide Interconnect |
US20150318301A1 (en) * | 2014-05-02 | 2015-11-05 | Joonhee Lee | Semiconductor memory device and method of fabricating the same |
CN105374825A (zh) * | 2014-08-13 | 2016-03-02 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
US20160268263A1 (en) * | 2015-03-11 | 2016-09-15 | SK Hynix Inc. | Semiconductor device and manufacturing method thereof |
US20160365352A1 (en) * | 2015-06-15 | 2016-12-15 | SanDisk Technologies, Inc. | Passive devices for integration with three-dimensional memory devices |
US20170256559A1 (en) * | 2016-03-04 | 2017-09-07 | SK Hynix Inc. | Semiconductor device and manufacturing method for the same |
US20170271347A1 (en) * | 2016-03-15 | 2017-09-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112530961A (zh) * | 2019-09-19 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
US11948889B2 (en) | 2019-09-19 | 2024-04-02 | Kioxia Corporation | Semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
CN110021608B (zh) | 2024-03-08 |
US20210098492A1 (en) | 2021-04-01 |
US20230113904A1 (en) | 2023-04-13 |
US10896915B2 (en) | 2021-01-19 |
TWI689088B (zh) | 2020-03-21 |
US11557605B2 (en) | 2023-01-17 |
TW201939730A (zh) | 2019-10-01 |
JP2019121717A (ja) | 2019-07-22 |
US20190214403A1 (en) | 2019-07-11 |
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CB02 | Change of applicant information |
Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20220208 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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