CN110010060B - 垂直堆叠晶体管和包括垂直堆叠晶体管的显示设备 - Google Patents

垂直堆叠晶体管和包括垂直堆叠晶体管的显示设备 Download PDF

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CN110010060B
CN110010060B CN201910007151.2A CN201910007151A CN110010060B CN 110010060 B CN110010060 B CN 110010060B CN 201910007151 A CN201910007151 A CN 201910007151A CN 110010060 B CN110010060 B CN 110010060B
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electrode
transistor
gate electrode
channel
layer
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CN110010060A (zh
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金兑映
朴钟宇
权赫寅
金旲桓
金熙中
洪世永
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Industry Academic Cooperation Foundation of Chung Ang University
Samsung Display Co Ltd
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Industry Academic Cooperation Foundation of Chung Ang University
Samsung Display Co Ltd
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    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract

本发明构思公开了一种垂直堆叠晶体管和包括垂直堆叠晶体管的显示设备。所述垂直堆叠晶体管包括：位于垂直方向上的第一晶体管和第二晶体管，其中所述第一晶体管包括在所述垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极，并且所述第二晶体管包括在所述垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极，其中所述第二栅电极和所述第二电极是同一电极。

Description

垂直堆叠晶体管和包括垂直堆叠晶体管的显示设备
相关申请的交叉引用
本申请要求2018年1月4日在韩国知识产权局提交的韩国专利申请10-2018-0001378的优先权，其公开内容通过引用整体合并于此。
技术领域
本发明构思的示例性实施例涉及垂直堆叠结构、包括垂直堆叠结构的显示设备、以及显示设备的制造方法。
背景技术
随着信息技术的发展，用户和信息之间的显示介质变得越来越与用户的体验相关。因此，诸如液晶显示设备、有机发光显示设备和等离子显示面板的显示设备被越来越多地使用。
在这些显示设备中，有机发光显示设备使用通过电子和空穴的复合产生光的有机发光二极管来显示图像。有机发光显示设备具有高响应速度，并且以低功耗驱动。
为了适应高分辨率面板，有机发光显示设备的每个像素设置有更多晶体管，因此，每个像素的开口率减小。
然而，如果每个像素的开口率减小，则有机发光二极管的寿命缩短。
发明内容
根据本发明构思的示例性实施例，提供了一种垂直堆叠晶体管，包括：位于垂直方向上的第一晶体管和第二晶体管，其中第一晶体管包括在垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极，并且第二晶体管包括在垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极，其中第二栅电极和第二电极是同一电极。
根据本发明构思的示例性实施例，提供了一种显示设备，包括：第一晶体管，具有连接到扫描线的第一栅电极和连接到数据线的第一电极；有机发光二极管；第二晶体管，具有连接到第一晶体管的第二电极的第二栅电极，第二晶体管连接有机发光二极管和电源线；以及连接第二栅电极和电源线的存储电容器，其中第一晶体管包括在垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极；并且第二晶体管包括在垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极，其中第二栅电极和第二电极是同一电极。
第三电极可以连接到电源线，并且第四电极可以连接到有机发光二极管的阳极。
第二栅电极和第三电极可以是存储电容器的电极。
数据线可以具有两层结构，其中数据线的第一层具有与第一电极相同的材料，并且数据线的第二层具有与第二栅电极相同的材料。
电源线可以具有两层结构，其中电源线的第一层具有与第三电极相同的材料，并且电源线的第二层具有与第四电极相同的材料。
第二绝缘层可以位于数据线和电源线之间。
扫描线可以包括与第一栅电极相同的材料。
第一绝缘层可以位于数据线和扫描线之间。
根据本发明构思的示例性实施例，提供了一种制造显示设备的方法，该方法包括：形成第一栅电极和扫描线；形成覆盖第一栅电极和扫描线的第一绝缘层；在第一绝缘层上形成数据线的第一部分和第一电极；并且在第一电极上形成第一沟道。
该方法可以进一步包括在第一沟道上同时形成第二电极和第二栅电极。
数据线的第二部分可以在形成第二电极和第二栅电极时形成。
该方法可以进一步包括：用第二绝缘层覆盖数据线和第二电极；以及在第二绝缘层上形成电源线的第一部分和第三电极，其中第三电极的至少一部分与第二电极重叠。
该方法可以进一步包括在第三电极上形成第二沟道，其中第二沟道的至少一部分与第二电极重叠。
该方法可以进一步包括在第二沟道上形成第四电极。
电源线的第二部分可以在形成第四电极时形成。
该方法可以进一步包括：形成包括开口的保护层，第四电极通过该开口暴露；在保护层的一部分和第四电极上形成阳极；形成包括开口的像素限定层，阳极的一部分通过该开口暴露；在像素限定层的一部分和暴露的阳极上形成发射层；以及在发射层和像素限定层上形成阴极。
根据本发明构思的示例性实施例，提供了一种显示设备，包括：补偿晶体管，包括在垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极；驱动晶体管，包括在垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极；以及开关晶体管，具有连接到数据线的第一电极，连接到驱动晶体管的第三电极的第二电极，以及连接到扫描线的栅电极，其中补偿晶体管的第一电极连接到驱动晶体管的第四电极，并且补偿晶体管的第二电极和第二栅电极是同一电极。
补偿晶体管的第一栅电极可以连接到扫描线。
显示设备可以进一步包括：存储电容器，连接电源线和驱动晶体管的第二栅电极；第一发射控制晶体管，连接电源线和驱动晶体管的第三电极；第二发射控制晶体管，连接驱动晶体管的第四电极和有机发光二极管的阳极；第一初始化晶体管，连接驱动晶体管的第二栅电极和初始化电源线；以及第二初始化晶体管，连接有机发光二极管的阳极和初始化电源线。
补偿晶体管的第一电极可以是源电极，并且补偿晶体管的第二电极可以是漏电极。
驱动晶体管的第三电极可以是源电极，并且驱动晶体管的第四电极可以是漏电极。
附图说明
通过参考附图详细描述本发明构思的示例性实施例，本发明构思的上述和其他特征将变得更加明显。
图1是示出根据本发明构思的示例性实施例的垂直堆叠晶体管的视图。
图2是示出根据本发明构思的示例性实施例的显示设备的视图。
图3是示出根据本发明构思的示例性实施例的像素的视图。
图4、图5、图6、图7、图8、图9、图10、图11、图12、图13、图14和图15是示出根据本发明构思的示例性实施例的像素的制造方法的视图。
图16是示出根据本发明构思的替代实施例的像素的视图。
具体实施方式
现在将参考附图更全面地描述本发明构思，附图中示出了本发明构思的示例性实施例。
在附图中，相同的附图标记可以指代相同的元件。
另外，附图中示出的每个元件的尺寸和厚度是为了更好地理解和便于描述而示出。因此，本发明构思不限于此。
图1是示出根据本发明构思的示例性实施例的垂直堆叠晶体管2TR的视图。
参见图1，根据本示例性实施例的垂直堆叠晶体管2TR包括位于垂直方向上的第一晶体管和第二晶体管。例如，垂直方向可以是基本垂直于水平方向的方向。
第一晶体管包括在垂直方向上顺序堆叠的第一栅电极G1、第一绝缘层GI1、第一一个电极S1、第一沟道CH1和第一另一电极D1。
第二晶体管包括在垂直方向上顺序堆叠的第二栅电极G2、第二绝缘层GI2、第二一个电极S2、第二沟道CH2和第二另一电极D2。例如，第一晶体管和第二晶体管的部件顺序堆叠在基板SUB的表面上。
第一晶体管和第二晶体管中的每一个可以是具有垂直沟道结构的肖特基势垒晶体管。肖特基势垒晶体管比大多数场效应晶体管小，并且具有比大多数场效应晶体管大的输出阻抗。所以，肖特基势垒晶体管的输出曲线具有优异的饱和特性，因此，当肖特基势垒晶体管用作有机发光显示设备的驱动晶体管时，可用于增大像素面积并降低功耗。
在根据本实施例的垂直堆叠晶体管2TR中，源电极和沟道之间的能障的大小通过施加到栅电极的电压而改变。因此，从源电极注入沟道的电流可以被改变。在本实施例中，源电极可以是第一晶体管的第一一个电极S1和第二晶体管的第二一个电极S2。
在本实施例中，第二栅电极G2和第一另一电极D1是同一电极。例如，该同一电极是电连接到同一节点的电极，并且也是同时用作第二栅电极G2和第一另一电极D1的电极。换句话说，第一晶体管和第二晶体管共用第二栅电极G2和第一另一电极D1。在这种情况下，可以节省一个电极层，因为单个电极仅需要一个电极层。
本实施例可以应用于其中第一晶体管的第一另一电极D1连接到第二晶体管的第二栅电极G2的电路。例如，本实施例可以应用于将在后面描述的图3的第一晶体管T1和第二晶体管T2以及图16的晶体管T3'和T2'。
在第一晶体管中，当第一沟道CH1基于施加到第一栅电极G1的电压而导通时，电流在第一一个电极S1和第一另一电极D1之间流动。在第二晶体管中，当第二沟道CH2基于通过第一另一电极D1施加到第二栅电极G2的电压而导通时，电流在第二一个电极S2和第二另一电极D2之间流动。第二一个电极S2和第二另一电极D2之间的电流可以与第一一个电极S1和第一另一电极D1之间的电流一起流动。
第一沟道CH1和第二沟道CH2可以形成为根据产品设计选择的半导体。例如，第一沟道CH1和第二沟道CH2中的每一个可以是氧化物半导体、有机半导体、非晶硅、多晶硅等。例如，氧化物半导体可以由氧化锌(ZnO)形成，或者由InZnO(IZO)、InGaZnO(IGZO)、HfInZnO(HIZO)等形成，在IZO、IGZO、HIZO等中氧化锌(ZnO)掺杂有铟(In)、镓(Ga)、铪(Hf)、锡(Sn)等。
图2是示出根据本发明构思的示例性实施例的显示设备8的视图。
参见图2，根据本实施例的显示设备8包括处理器9和显示面板10。
处理器9可以是通用处理器件。例如，处理器9可以是移动电话的应用处理器(AP)或另一个显示设备的处理器件。
处理器9可以将用于图像显示的信号发送到显示面板10。在图2中，示出了用于图像显示的信号从处理器9发送到时序控制器110。然而，用于图像显示的信号可以被发送到其中时序控制器110和数据驱动器130被集成的集成电路(IC)。另外，用于图像显示的信号可以被发送到数据驱动器130。例如，用于图像显示的信号可以包括数据使能信号、垂直同步信号、水平同步信号和图像信号。
显示面板10可以包括时序控制器110、扫描驱动器120、数据驱动器130和像素单元140。显示面板10使用从处理器9提供的图像信号和图像控制信号通过像素单元140显示图像。
时序控制器110使用数据使能信号、垂直同步信号、水平同步信号、第一图像信号、第二图像信号和第三图像信号，向数据驱动器130发送被校正为适合于数据驱动器130的规范的图像信号DATA。另外，时序控制器110分别将控制信号DCS(例如，数据控制信号)和SCS(例如，扫描控制信号)发送到数据驱动器130和扫描驱动器120。
数据驱动器130将数据电压提供给像素单元140。例如，数据驱动器130可以将基于数据控制信号DCS和校正的图像信号DATA产生的多个数据电压施加到多条数据线DL1、DL2、DL3、DL4、......和DLm。
扫描驱动器120将扫描信号提供给像素单元140。例如，扫描驱动器120可以响应于扫描控制信号SCS而将多个扫描信号提供给多条扫描线SL1、SL2、SL3、SL4、...、SLn-1和SLn。例如，扫描驱动器120可以顺序地将多个扫描信号提供给多条扫描线SL1、SL2、SL3、SL4、...、SLn-1和SLn。
像素单元140包括多个像素PX。多个像素PX中的每一个可以发射具有与数据电压相对应的灰度级的光。多个像素PX中的每一个可以耦接到数据线DL1、DL2、DL3、DL4、......和DLm中的对应数据线以及扫描线SL1、SL2、SL3、SL4、......SLn-1和SLn中的对应扫描线。另外，多个像素PX中的每一个可以通过数据线DL1、DL2、DL3、DL4、......和DLm中的其对应的数据线以及扫描线SL1、SL2、SL3、SL4、......、SLn-1和SLn中的其对应的扫描线而被提供有数据电压和扫描信号。当显示设备8是有机发光显示设备时，每个像素PX可以包括有机发光二极管。当显示设备8是液晶显示设备时，每个像素PX可以包括液晶层。
图3是示出根据本发明构思的示例性实施例的像素的视图。
参见图3，根据本实施例的像素PX可以包括多个晶体管T1和T2(例如，第一晶体管T1和第二晶体管T2)、存储电容器Cst和有机发光二极管OLED。
在本实施例中，多个晶体管T1和T2可以构成图1的垂直堆叠晶体管。在下文中，附图标记可以对应于参考图1描述的那些附图标记。
在本实施例中，示出了晶体管T1和T2中的每一个是P型晶体管。然而，晶体管T1和T2中的每一个可以是N型晶体管。此外，辅助晶体管或其他元件可以添加到图3的像素电路中。另外，图3的像素电路可以被重新配置，例如，有机发光二极管OLED可以位于第二晶体管T2和电源线ELVDD之间。
第一晶体管T1的第一一个电极S1可以连接到数据线DLj，第一晶体管T1的第一栅电极G1可以连接到扫描线SLi，并且第一晶体管T1的第一另一电极D1可以连接到第二晶体管T2的第二栅电极G2。
第二晶体管T2的第二一个电极S2可以连接到电源线ELVDD，第二晶体管T2的第二另一电极D2可以连接到有机发光二极管OLED的阳极，并且第二晶体管T2的第二栅电极G2可以连接到第一晶体管T1的第一另一电极D1。
存储电容器Cst可以连接第二晶体管T2的第二栅电极G2和电源线ELVDD。存储电容器Cst还可以连接第一晶体管T1的第一另一电极D1和电源线ELVDD。
有机发光二极管OLED的阳极可以连接到第二晶体管T2的第二另一电极D2，并且有机发光二极管OLED的阴极可以连接到电源线ELVSS。
施加到电源线ELVDD的电压可以大于施加到另一电源线ELVSS的电压。
在下文中，将描述图3的像素PX的驱动方法。
如果扫描信号被提供给对应像素行上的扫描线SLi，则第一晶体管T1的第一栅电极G1被施加具有导通电平的电压。因此，第一晶体管T1导通以电连接数据线DLj和第二晶体管T2的第二栅电极G2。此时，施加到数据线DLj的数据电压和施加到电源线ELVDD的电压之间的差被保持在存储电容器Cst中。第二晶体管T2根据保持在存储电容器Cst中的电压差，控制从电源线ELVDD流到电源线ELVSS的驱动电流的量。有机发光二极管OLED根据由第二晶体管T2控制的驱动电流的量发射具有目标亮度的光。
图4至图15是示出根据本发明构思的示例性实施例的像素的制造方法的视图。
参见图4，制备由诸如玻璃或塑料的绝缘材料制成的基板SUB。
通过在基板SUB上形成导电层并蚀刻导电层来形成第一栅电极G1和扫描线SLi。
导电层可以通过薄薄地沉积诸如氧化铟锡(ITO)或氧化铟锌(IZO)的透明导电材料，或者诸如钨(W)、钛(Ti)、钼(Mo)、银(Ag)、钽(Ta)、铝(Al)、铜(Cu)、金(Au)或铌(Nb)或其任何合金的金属来形成。
第一栅电极G1和扫描线SLi可以同时形成在同一层中以彼此连接。因此，不需要通过接触孔的桥结构或类似结构将第一栅电极G1和扫描线SLi彼此连接。在本发明构思的示例性实施例中，缓冲层可以在形成第一栅电极G1和扫描线SLi之前由氧化硅层或氮化硅层形成在基板SUB上。
接下来，形成覆盖第一栅电极G1和扫描线SLi的第一绝缘层GI1。第一绝缘层GI1可以由无机材料制成。然而，在替代实施例中，第一绝缘层GI1可以由有机材料制成。
参见图5，通过在第一绝缘层GI1上形成导电层并蚀刻导电层来形成第一一个电极S1和数据线DLj的一个部分DLj1。第一一个电极S1和数据线DLj的一个部分DLj1可以同时形成在同一层中以彼此连接。因此，不需要通过接触孔的桥结构或类似结构将第一一个电极S1和数据线DLj的一个部分DLj1彼此连接。第一一个电极S1可以是源电极。
接下来，参见图6，在第一一个电极S1上形成第一沟道CH1。在形成第一沟道CH1的过程中，第一沟道CH1的一部分可以堆叠在数据线DLj的一个部分DLj1上。然而，第一沟道CH1的该部分可以通过使用半色调掩模或具有与第一沟道CH1的蚀刻速率不同的蚀刻速率的蚀刻剂来去除。
接下来，参见图7，通过形成导电层并蚀刻导电层在第一沟道CH1上同时形成第一另一电极D1和第二栅电极G2。另外，可以形成数据线DLj的另一部分DLj2。此时，与第一一个电极S1不同，第一另一电极D1未连接到数据线DLj的另一部分DLj2(参见图3)。因此，数据线DLj可以具有两个堆叠层的结构，其中一层(即一个部分DLj1)使用与第一一个电极S1相同的材料，而另一层(即另一部分DLj2)使用与第二栅电极G2相同的材料。第一另一电极D1可以是漏电极。
第二栅电极G2可以延伸以构成存储电容器Cst的一个电极。
接下来，参见图8，数据线DLj1和DLj2以及第一另一电极D1被第二绝缘层GI2覆盖。第二绝缘层GI2可以由无机材料制成。然而，在替代实施例中，第二绝缘层GI2可以由有机材料制成。
另外，通过形成导电层并蚀刻导电层，在第二绝缘层GI2上形成第二一个电极S2和电源线ELVDD的一个部分ELVDD1，使得第二一个电极S2的至少一部分与第一另一电极D1重叠。第二一个电极S2可以是源电极。第二一个电极S2和电源线ELVDD的一个部分ELVDD1可以同时形成在同一层中以彼此连接。因此，不需要通过接触孔的桥结构或类似结构将第二一个电极S2和电源线ELVDD的一个部分ELVDD1彼此连接。
另外，第二一个电极S2对应于第二栅电极G2延伸。因此，第二一个电极S2和第二栅电极G2可以分别构成存储电容器Cst的电极。因此，不需要用于形成存储电容器Cst的分离的电极层。
接下来，参见图9，在第二一个电极S2上形成第二沟道CH2，使得第二沟道CH2的至少一部分与第一另一电极D1重叠。
在形成第二沟道CH2的过程中，第二沟道CH2的一部分可以堆叠在电源线ELVDD的一个部分ELVDD1上。然而，第二沟道CH2的该部分可以使用半色调掩模或具有与第二沟道CH2的蚀刻速率不同的蚀刻速率的蚀刻剂来去除。
接下来，参见图10，通过形成导电层并蚀刻导电层，在第二沟道CH2上形成第二另一电极D2，并形成电源线ELVDD的另一部分ELVDD2。第二另一电极D2可以是漏电极。这里，与电源线ELVDD的一个部分ELVDD1不同，电源线ELVDD的另一部分ELVDD2不连接到第二另一电极D2(参见图3)。因此，电源线ELVDD可以具有两个堆叠层的结构，一层(即一个部分ELVDD1)使用与第二一个电极S2相同的材料，另一层(即另一部分ELVDD2)使用与第二另一电极D2相同的材料。
使用直到图10的过程，可以形成包括第一晶体管T1和第二晶体管T2的垂直堆叠晶体管2TR，并且因此可以通过有效地使用每个电极层而将其应用到像素PX。
将有机发光二极管OLED连接到垂直堆叠晶体管2TR的过程在以下从图11开始的附图中示出。首先，形成包括开口的保护层VIA，第二另一电极D2通过该开口暴露。保护层VIA可以由诸如丙烯酸树脂或聚酰亚胺的有机材料制成。然而，在替代实施例中，保护层VIA可以由无机材料制成。
参见图12，有机发光二极管OLED的阳极AN形成在保护层VIA的一部分和第二另一电极D2上。参见图13，形成包括开口的像素限定层PXD，阳极AN的一部分通过该开口暴露。
接下来，参见图14，在像素限定层PXD的一部分和暴露的阳极AN上形成发射层ORG。参见图15，在发射层ORG和像素限定层PXD上形成阴极CATH。因此，在该实施例中，有机发光二极管OLED形成在垂直堆叠晶体管2TR上。
图16是示出根据本发明构思的替代实施例的像素PX'的视图。
参见图16，根据本实施例的像素PX'包括多个晶体管T1'、T2'、T3'、T4'、T5'、T6'和T7'、存储电容器Cst'和有机发光二极管OLED'。
当垂直堆叠晶体管2TR被应用到图16的像素PX'时，第一晶体管可以是晶体管T3'，并且第二晶体管可以是晶体管T2'。
在下文中，将描述图16的像素PX'的结构。
晶体管T1'的第一电极连接到数据线DLj'，晶体管T1'的第二电极连接到晶体管T2'的第一电极，并且晶体管T1'的栅电极连接到扫描线SLi'。晶体管T1'可以是开关晶体管。
晶体管T2'的第一电极连接到晶体管T6'的第二电极，晶体管T2'的第二电极连接到晶体管T7'的第一电极，并且晶体管T2'的栅电极连接到存储电容器Cst'的第一电极。晶体管T2'可以是驱动晶体管。
晶体管T3'连接晶体管T2'的栅电极和第二电极，并且晶体管T3'的栅电极连接到扫描线SLi'。晶体管T3'可以是补偿晶体管。
晶体管T4'的第一电极连接到晶体管T2'的栅电极，晶体管T4'的第二电极连接到初始化电源线VINT'。晶体管T4'的栅电极连接到前一扫描线SL(i-1)'。晶体管T4'的栅电极可以连接到另一扫描线或专用初始化控制线。晶体管T4'可以是第一初始化晶体管。
晶体管T5'的第一电极连接到有机发光二极管OLED'的阳极，晶体管T5'的第二电极连接到初始化电源线VINT'，并且晶体管T5'的栅电极连接到前一扫描线SL(i-1)'。晶体管T5'的第二电极可以连接到具有与初始化电源线VINT'的电压值不同的电压值的另一初始化电源线。晶体管T5'的栅电极可以连接到另一扫描线(例如，扫描线SLi')或专用初始化控制线。晶体管T5'可以是第二初始化晶体管。
晶体管T6'的第一电极连接到电源线ELVDD'，晶体管T6'的第二电极连接到晶体管T2'的第一电极，并且晶体管T6'的栅电极连接到发射控制线EM'。晶体管T6'可以是第一发射控制晶体管。
晶体管T7'的第一电极连接到晶体管T2'的第二电极，晶体管T7'的第二电极连接到有机发光二极管OLED'的阳极，并且晶体管T7'的栅电极连接到发射控制线EM'。晶体管T7'可以是第二发射控制晶体管。
存储电容器Cst'连接晶体管T2'的栅电极和电源线ELVDD'。电源线ELVDD'连接到存储电容器Cst'的第二电极。
有机发光二极管OLED'的阳极连接到晶体管T7'的第二电极，并且有机发光二极管OLED'的阴极连接到电源线ELVSS'。有机发光二极管OLED'根据应用有机发光二极管OLED'的产品而位于电源线ELVDD'和电源线ELVSS'之间的驱动电流路径上。
在根据本发明构思的显示设备及其制造方法中，每个像素的开口率可以使用垂直堆叠晶体管来增大。
虽然已经参考本发明构思的示例性实施例具体示出并描述了本发明构思，但是本领域普通技术人员将理解，在不脱离所附权利要求中阐述的本发明构思的精神和范围的情况下，可以在形式和细节上进行各种改变。

Claims (10)

1.一种垂直堆叠晶体管，包括：
位于垂直方向上的第一晶体管和第二晶体管，
其中，所述第一晶体管包括在所述垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极，并且
所述第二晶体管包括在所述垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极，
其中所述第二栅电极和所述第二电极是同一电极。
2.一种显示设备，包括：
第一晶体管，具有连接到扫描线的第一栅电极和连接到数据线的第一电极；
有机发光二极管；
第二晶体管，具有连接到所述第一晶体管的第二电极的第二栅电极，所述第二晶体管连接所述有机发光二极管和电源线；以及
连接所述第二栅电极和所述电源线的存储电容器，
其中，所述第一晶体管包括在垂直方向上顺序堆叠的所述第一栅电极、第一绝缘层、所述第一电极、第一沟道和所述第二电极，并且
所述第二晶体管包括在所述垂直方向上顺序堆叠的所述第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极，
其中所述第二栅电极和所述第二电极是同一电极。
3.根据权利要求2所述的显示设备，其中，所述第三电极连接到所述电源线，并且
所述第四电极连接到所述有机发光二极管的阳极。
4.根据权利要求3所述的显示设备，其中，所述第二栅电极和所述第三电极是所述存储电容器的电极。
5.根据权利要求2所述的显示设备，其中所述数据线具有两层结构，其中所述数据线的第一层具有与所述第一电极相同的材料，并且所述数据线的第二层具有与所述第二栅电极相同的材料。
6.根据权利要求5所述的显示设备，其中所述电源线具有两层结构，其中所述电源线的第一层具有与所述第三电极相同的材料，并且所述电源线的第二层具有与所述第四电极相同的材料。
7.根据权利要求6所述的显示设备，其中，所述第二绝缘层位于所述数据线和所述电源线之间。
8.根据权利要求5所述的显示设备，其中，所述扫描线包括与所述第一栅电极相同的材料。
9.根据权利要求8所述的显示设备，其中，所述第一绝缘层位于所述数据线和所述扫描线之间。
10.一种显示设备，包括：
补偿晶体管，包括在垂直方向上顺序堆叠的第一栅电极、第一绝缘层、第一电极、第一沟道和第二电极；
驱动晶体管，包括在所述垂直方向上顺序堆叠的第二栅电极、第二绝缘层、第三电极、第二沟道和第四电极；以及
开关晶体管，具有连接到数据线的第一电极、连接到所述驱动晶体管的所述第三电极的第二电极以及连接到扫描线的栅电极，
其中，所述补偿晶体管的所述第一电极连接到所述驱动晶体管的所述第四电极，并且所述补偿晶体管的所述第二电极和所述第二栅电极是同一电极。
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