CN110007567A - The method for monitoring the continuous depth of field extender function of scan-type litho machine - Google Patents
The method for monitoring the continuous depth of field extender function of scan-type litho machine Download PDFInfo
- Publication number
- CN110007567A CN110007567A CN201910211434.9A CN201910211434A CN110007567A CN 110007567 A CN110007567 A CN 110007567A CN 201910211434 A CN201910211434 A CN 201910211434A CN 110007567 A CN110007567 A CN 110007567A
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- China
- Prior art keywords
- monitoring
- continuous depth
- litho machine
- scan
- field extender
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of methods for monitoring the continuous depth of field extender function of scan-type litho machine, and the characteristic size homogeneity under the conditions of being defocused by monitoring ISO sample realizes the monitoring to continuous depth of field extender function.This method can effectively realize the monitoring to the continuous depth of field extender function of litho machine, Lai Tigao process window.
Description
Technical field
The present invention relates to semiconductor devices manufacture and testing fields, particularly relate to a kind of continuous scape of monitoring scan-type litho machine
The method of deep extender function.
Background technique
Photoetching (photoetching or lithography) is by a series of production stages, by crystal column surface film
Specific part remove technique.After this, crystal column surface can leave the film with micrographics structure.Pass through photoetching process
Process, what is finally retained on wafer is pattern image part.The target of photoetching production is the requirement according to circuit design, is generated
Accurate in size pattern image, and it is correct and correct with being associated with for other components (parts) in the position of crystal column surface.
The step of photoetching is most critical in basic technology.Photoetching has determined the critical size of device.Mistake in photoetching process
Mistake can cause figure distortion or register bad, can finally be converted into and have an impact to the electrical characteristics of device.The dislocation of figure also can
Lead to similar bad result.The quality of photoetching has considerable influence for the manufacturing process of integrated circuit.
Litho machine is the important equipment of photoetching, and in field of semiconductor manufacture, litho machine is that semiconductor integrated circuit manufactured
The most expensive and essential equipment, the performance of litho machine are directly related to the ability of technique in journey, and the ability of technique is direct
It is related to the manufacturing capacity of semiconductor company.Usual manufacturing sector needs to do many tests to detect the stability of litho machine,
Such as the CDU (the characteristic size uniformity in wafer face) of wafer, shot CDU (dimensional homogeneity under mask plate mapping), E-
Chuck ADI check (exposure worktable defects detection), Focus check (focus detection), OVL Matching (interlayer set
Carve deviation) etc..
Continuous depth of field extender CDP:(Continuous DOF Expansion Procedure), certain boards are referred to as
It is an apolegamy function of scan-type litho machine for EFESE/focus range/focus tilt.Its application can be not
In the case where influencing litho machine output, the effective process window for increasing hole engineering.The principle of work and power is as shown in Figure 1, exposure
When, wafer is tilted a certain angle on cushion cap along the scanning direction of scan-type litho machine, while wafer cushion cap moves up and down, right
Crystal column surface is scanned.Wafer downward shift amount is referred to as CDP amplitude, and value needs monitored.According to emulation as a result,
CDP can be improved hole engineering DOF (depth of focus, or the referred to as depth of field, refer to litho machine focus after can blur-free imaging one section of focal plane
Range), data are emulated as shown in Fig. 2, showing CDP offset in figure and defocusing the relationship being positively correlated, and defocus bigger, CDP offset
It is bigger.
But either for litho machine manufacturer or semiconductor crystal wafer manufactory, the research of CDP function is all less, even more
Lack the monitoring method of CDP function.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of continuous depth of field extender of monitoring scan-type litho machine
The method of function.
To solve the above problems, a kind of monitoring continuous depth of field extender function of scan-type litho machine of the present invention
Method is to realize the monitoring to continuous depth of field extender function by monitoring characteristic size homogeneity.
Further, the continuous depth of field extender function, in the case where not opening, scan-type litho machine cannot
Guarantee the characteristic size homogeneity in full focal range.
Further, the monitoring characteristic size homogeneity, is that characteristic size under the conditions of ISO sample defocuses is uniform
Property.
Further, the continuous depth of field extender function, can increase the process window of hole engineering.
Further, equal by the characteristic size under the conditions of periodic measurement optimum focusing/defocus by making a standard film
One property numerical value, to monitor continuous depth of field extender function.
Further, the standard film has carried out the wafer that photoetching process has had picture on surface for one.
Further, the optimum focusing/defocus condition, is to be determined according to processing procedure, the condition of defocusing generally selects DOF
±0.1。
Further, the homogeneity numerical value, scope and 3sigma, the range are CD maximal and minmal value
Difference；3sigma is three times standard deviation.
The method of the monitoring continuous depth of field extender function of scan-type litho machine of the present invention, can effectively realize pair
The monitoring of the continuous depth of field extender function of litho machine improves process window.
Detailed description of the invention
Fig. 1 is the scanning process schematic diagram of scan-type litho machine.
Fig. 2 is continuous depth of field extender and the relationship emulation schematic diagram of DOF.
Fig. 3 is the relation data of characteristic size homogeneity and continuous depth of field extender under the conditions of defocusing.
Fig. 4 is the schematic diagram that the present invention monitors continuous depth of field extender function.
Specific embodiment
The method of the monitoring continuous depth of field extender function of scan-type litho machine of the present invention, is by monitoring feature
Dimensional homogeneity realizes the monitoring to continuous depth of field extender function.
Due to the continuous depth of field extender function of litho machine, in the case where not opening, scan-type litho machine cannot be protected
Demonstrate,prove the characteristic size homogeneity in full focal range.Table shown in Fig. 3 can be seen in the case where not opening CDP function
It arrives, when focal length Focus=-0.25/0.05, the characteristic size CD amplitude of variation of ISO sample is larger, and homogeneity is obviously poor.
Therefore, the characteristic size homogeneity under the conditions of being defocused by monitoring ISO sample, may be implemented the prison to CDP function
Control.
Specific operating method is that, by making a standard film, which, which can be one piece, have passed through photoetching process,
The wafer of patterned surface.By the characteristic size homogeneity numerical value under the conditions of periodic measurement optimum focusing/defocus, to supervise
Control CDP function.
The optimum focusing/defocus condition is determined according to processing procedure, and the condition of defocusing generally selects DOF ± 0.1.By
Inherently there is a certain range in the depth of focus of scan-type photoetching machine lens group, there is the upper limit and lower limit in other words, in the upper limit under
Limit range in, this section is depth of focus DOF, can blur-free imaging, defocus condition selection DOF ± 0.1, be the lower limit-in DOF
0.1, and in the upper limit+0.1 of DOF.With this as it is optimal focus/defocus condition.
If right side is in the case where opening CDP function in Fig. 3 table, the characteristic size of focal length Focus=-0.3/-0.15
CD homogeneity is preferable.
The present invention has continuous depth of field extender function suitable for all, or has the litho machine of similar functions.
That is, all have by the way that wafer cushion cap to be tilted a certain angle, it is exposed and realizes this function of the increase of process window
Method of the present invention can be used in litho machine.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of method for monitoring the continuous depth of field extender function of scan-type litho machine, it is characterised in that: by monitoring feature
Dimensional homogeneity realizes the monitoring to continuous depth of field extender function；
The continuous depth of field extender function, refer to that litho machine has by the way that wafer cushion cap is tilted a certain angle, together
Shi Jingyuan cushion cap moves up and down, the function of being scanned, expose to crystal column surface.
2. the method for the monitoring continuous depth of field extender function of scan-type litho machine as described in claim 1, it is characterised in that:
The continuous depth of field extender function, in the case where not opening, scan-type litho machine cannot be guaranteed in full focal range
Characteristic size homogeneity.
3. the method for the monitoring continuous depth of field extender function of scan-type litho machine as described in claim 1, it is characterised in that:
The monitoring characteristic size homogeneity is characteristic size homogeneity under the conditions of ISO sample defocuses.
4. the method for the monitoring continuous depth of field extender function of scan-type litho machine as claimed in claim 2, it is characterised in that:
The continuous depth of field extender function, can increase the process window of hole engineering.
5. the method for the monitoring continuous depth of field extender function of scan-type litho machine as described in claim 1, it is characterised in that:
By making a standard film, by the characteristic size homogeneity numerical value under the conditions of periodic measurement optimum focusing/defocus, come the company of monitoring
Continuous depth of field extender function.
6. the method for the monitoring continuous depth of field extender function of scan-type litho machine as claimed in claim 5, it is characterised in that:
The standard film has carried out the wafer that photoetching process has had picture on surface for one.
7. the method for the monitoring continuous depth of field extender function of scan-type litho machine as claimed in claim 5, it is characterised in that:
The optimum focusing/defocus condition is determined according to processing procedure, and the condition of defocusing generally selects DOF ± 0.1.
8. the method for the monitoring continuous depth of field extender function of scan-type litho machine as claimed in claim 5, it is characterised in that:
The homogeneity numerical value, scope and 3sigma, the range are the difference of CD maximal and minmal value；3sigma is three times
Standard deviation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910211434.9A CN110007567A (en) | 2019-03-20 | 2019-03-20 | The method for monitoring the continuous depth of field extender function of scan-type litho machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910211434.9A CN110007567A (en) | 2019-03-20 | 2019-03-20 | The method for monitoring the continuous depth of field extender function of scan-type litho machine |
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| CN110007567A true CN110007567A (en) | 2019-07-12 |
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| CN201910211434.9A Pending CN110007567A (en) | 2019-03-20 | 2019-03-20 | The method for monitoring the continuous depth of field extender function of scan-type litho machine |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020136992A1 (en) * | 2001-03-26 | 2002-09-26 | Chung-Peng Ho | Method for patterning resist |
| US6641981B1 (en) * | 1999-11-18 | 2003-11-04 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| US20040130689A1 (en) * | 2003-01-07 | 2004-07-08 | Alexander Starikov | Defect compensation of lithography on non-planar surface |
| US6992751B2 (en) * | 2000-03-24 | 2006-01-31 | Nikon Corporation | Scanning exposure apparatus |
| US20060268248A1 (en) * | 2005-05-20 | 2006-11-30 | Christoph Noelscher | Lithographic projection apparatus and method of exposing a semiconductor wafer with a pattern from a mask |
| CN105593973A (en) * | 2013-08-10 | 2016-05-18 | 科磊股份有限公司 | Methods and apparatus for determining focus |
-
2019
- 2019-03-20 CN CN201910211434.9A patent/CN110007567A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6641981B1 (en) * | 1999-11-18 | 2003-11-04 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| US6992751B2 (en) * | 2000-03-24 | 2006-01-31 | Nikon Corporation | Scanning exposure apparatus |
| US20020136992A1 (en) * | 2001-03-26 | 2002-09-26 | Chung-Peng Ho | Method for patterning resist |
| US20040130689A1 (en) * | 2003-01-07 | 2004-07-08 | Alexander Starikov | Defect compensation of lithography on non-planar surface |
| US20060268248A1 (en) * | 2005-05-20 | 2006-11-30 | Christoph Noelscher | Lithographic projection apparatus and method of exposing a semiconductor wafer with a pattern from a mask |
| CN105593973A (en) * | 2013-08-10 | 2016-05-18 | 科磊股份有限公司 | Methods and apparatus for determining focus |
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Application publication date: 20190712 |
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