CN110002491A - A kind of method of controllable preparation match bar type nano indium oxide - Google Patents
A kind of method of controllable preparation match bar type nano indium oxide Download PDFInfo
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- CN110002491A CN110002491A CN201910353034.1A CN201910353034A CN110002491A CN 110002491 A CN110002491 A CN 110002491A CN 201910353034 A CN201910353034 A CN 201910353034A CN 110002491 A CN110002491 A CN 110002491A
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- indium oxide
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- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 46
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 18
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000002474 experimental method Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 238000005086 pumping Methods 0.000 claims abstract 2
- 239000010931 gold Substances 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000009835 boiling Methods 0.000 claims description 9
- 241000973497 Siphonognathus argyrophanes Species 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 2
- 238000006555 catalytic reaction Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000012010 growth Effects 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000007805 chemical reaction reactant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- -1 embodiment 1 Chemical compound 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000009647 facial growth Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
- B01J23/52—Gold
-
- B01J35/23—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Abstract
The experimental method for using chemical vapor deposition herein, discloses a kind of method of controllable preparation match bar type nano indium oxide, is related to field of nano material preparation.Experimental method is as follows: in the first warm area placing response source indium powder of double temperature-area tubular furnaces, the second warm area places the silicon wafer for being moistened with epigranular nanogold particle；By vacuum pumping in tube furnace furnace when experiment starts, argon gas is passed through until reaction temperature changes logical oxygen, and closing oxygen is passed through argon gas after experiment, and argon gas is closed after being cooled to room temperature and takes out sample.Experimental method of the present invention is simple, and experimental method controllably prepares various sizes of match bar type nano indium oxide, and the head diameter range of match bar type nano indium oxide is in 20-70nm, and body part diameter range is in 25-70nm, and match stick length range is in 50-400nm.
Description
Technical field
The present invention relates to the technical fields of nano material preparation, more particularly to chemical vapour deposition technique, and apply grain
Spend the experimental method of uniform nanogold particle controllable preparation match bar type nano indium oxide.
Background technique
Indium oxide nanometer material refers to the scale of material in three-dimensional space, and at least there are a dimensions to be in nanometer amount
A kind of material of grade (1nm-100nm).Indium oxide nanometer material has more excellent properties compared to conventional bulk and is answered
Used in nano magnetic material, nano-sensor, nano semiconductor material etc..One-dimensional indium oxide nanometer material is because having preferable gas
Quick property and Field emission property etc. and by extensive concern.One-dimensional indium oxide nanometer material mainly includes nano wire, nanometer rods, nanometer
Fiber and nanotube etc., in one-dimensional indium oxide nanometer material, because of indium oxide nano thread specific surface area with higher and
More excellent properties and have become a hot topic of research.The method for synthesizing indium oxide nano thread mainly includes chemical vapour deposition technique,
Physical vaporous deposition, solution-gel method, sputtering method, template etc..Wherein indium oxide is prepared in the method for chemical vapor deposition
The method of nano wire is the most simple and convenient, and the sample purity of synthesis is high, good crystallinity.Meng, Ming et al. (ACS APPLIED
MATERIALS&INTERFACES, 2014,6,6:4081-4088) it has synthesized indium oxide using the method for chemical vapor deposition and has received
Rice noodles, and have a preferable application in photoelectric field, but this experimental implementation is had no idea the diameter of the nano wire of control growth and
The material used in an experiment is relatively expensive；Nandan, Singh et al. (NANOTECHNOLOGY, 2009,20,19:
195605) indium oxide nano thread has been synthesized at 875 DEG C, but this experiment is unable to control the diameter and length of nanowire growth.Cause
This method herein can realize that growth has different-diameter, length by controlling the size of Au catalyst nano particle
Match bar type nano indium oxide.
Summary of the invention
A kind of good crystallinity is provided to improve the defect present invention of above-mentioned preparation process, sample purity is high, simple process, at
This cheap method, obtained match bar type nano indium oxide diameter is smaller, and the shorter pattern of length is uniform and size is controllable
Preparation method.
Steps are as follows by the present invention:
(1) reactive group bottom silicon wafer is cut into having a size of 1 × 1cm, in acetone, alcohol, deionized water successively ultrasound 20
Minute, it is dried up to obtain pure silicon wafer with high pure nitrogen.
(2) reactive group bottom is used to dip even-grained nanogold particle as catalyst, catalyst size is respectively 1-
10nm。
(3) silicon wafer cleaned up is dipped into even-grained nanogold particle solution, is placed on stone up for gold-plated
In Ying Zhou, and by quartz boat be placed on diameter be 3.5cm, length be 30cm Boiling tube closed at one end inside, quartz boat with
The distance of Boiling tube mouth is 5cm.Another quartz boat for filling reaction source indium powder is placed in the identical big examination of another size
Inside pipe.Two test tube mouths are staggered relatively and at a distance of 10cm, and the test tube equipped with indium powder is located at the first warm area center, is equipped with gold-plated
The Boiling tube of silicon wafer is located at the second warm area center.
(4) it will be evacuated to vacuum in double temperature-area tubular furnace furnaces using vacuum pump, argon gas is passed through into furnace and waits for that air pressure reaches in furnace
Gas flow outlet is opened when ambient atmospheric pressure.
(5) so that in-furnace temperature is warming up to 950 DEG C of reaction temperature with 10 DEG C per minute, be passed through 30sccm oxygen and close argon gas,
Oxygen is closed after reaction 1h is passed through the argon gas that flow is 30sccm.Argon gas is closed when in-furnace temperature reaches room temperature takes out sample
Product are analyzed.
Preparation method of the present invention using the identical test tube counterpart of two sizes it is characterized in that placed, granularity is equal
The controllable match bar type nano indium oxide of size dimension can be obtained as catalyst in even gold nano point, which obtains
Match bar type nano indium oxide diameter it is smaller, length is extremely short, and pattern is uniform, and simple process is low in cost, and sample purity is high,
Good crystallinity.
Detailed description of the invention
Fig. 1 is experimental provision schematic diagram.
Fig. 2 is 6nm predecessor Au catalyst shape appearance figure after annealing at a high temperature.
Fig. 3 is match bar type nano indium oxide X-ray diffraction (XRD) spectrogram.
Fig. 4 is match bar type nano indium oxide scanning electron microscope (SEM) spectrogram.
Fig. 5 is that spectrogram is swept in the face match bar type nano indium oxide (EDS).
Fig. 6 is match bar type nano indium oxide transmission electron microscope (TEM) spectrogram.
Specific embodiment
To make substantive features of the invention it is more readily appreciated that with reference to the accompanying drawing and preferred embodiment is to technology of the invention
Scheme makees further be described in detail.But the description and explanation below in relation to embodiment do not constitute the scope of the present invention any
Limitation.
Below in conjunction with the embodiment of the present invention, we are 6nm, 9nm with gold nano spot size, and reaction temperature is 950 DEG C, oxygen
Gas velocity is 30sccm, for argon gas flow velocity is 30sccm and the reaction time is 1h, is carried out to technical solution of the present invention complete
Ground description, but described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Fig. 1 is experiment
Device rough schematic.The internal diameter of Boiling tube is 3.5cm, outer diameter 4cm, length 30cm.Two test tube mouths are staggered relatively and phase
Away from 10cm, indium source is reacted apart from test tube mouth 5cm and is placed on the first warm area, react substrate distance test tube mouth 5cm and be placed in second
Warm area.6nm predecessor Au catalyst in experiment is used high temperature experimental method to anneal and obtains corresponding image such as Fig. 2 by we,
It can be found that the size distribution of the gold particle after annealing is more uniform.Size after the annealing of 6nm predecessor Au catalyst
Distributed area proportion such as table 1, it can be seen that the distribution of gold particle size is more uniform, and between 10-20nm
Gold particle distribution is the most extensive.
Size distributed area proportion after the annealing of 1 6nm predecessor Au catalyst of table
Embodiment 1
Reactive group bottom silicon wafer is successively 20 minutes ultrasonic in acetone, alcohol, deionized water, it dries up to obtain with high pure nitrogen
Pure silicon wafer.Reactive group bottom dips even-grained 6nm gold particle solution on plated film pulling machine, keeps certain lifting speed
Degree.It is placed on gold-plated in quartz boat up, and it is 3.5cm that quartz boat, which is placed on diameter, length is an end seal of 30cm
Inside the Boiling tube closed, quartz boat is 5cm at a distance from Boiling tube mouth.Another quartz boat for filling reaction source indium powder is placed
Inside the identical Boiling tube of another size.Staggered relatively and at a distance of 10cm, the test tube position equipped with indium powder by two test tube mouths
In the first warm area center, the Boiling tube equipped with gold-plated silicon wafer is located at the second warm area center.It will be double using vacuum pump when experiment starts
It is evacuated to vacuum in temperature-area tubular furnace furnace, argon gas is passed through into reaction unit until air pressure reaches ambient atmospheric pressure in furnace.Make furnace
Interior temperature, up to 950 DEG C, is passed through 30sccm oxygen and closes argon gas reaction 1h, close oxygen after completion of the reaction with 10 DEG C per minute heatings
Gas is passed through argon gas, and argon gas is closed when in-furnace temperature reaches room temperature and takes out sample, is analyzed.If Fig. 3 is that we choose implementation
Example sample carries out the spectrogram of X-ray diffraction (XRD) test, as can be seen that all diffraction maximums of sample from X-ray diffraction spectrogram
Position fits like a glove with JCPDS no.06-416 standard spectrogram peak position, and diffraction crystal face has marked in figure, belongs to Cubic crystallographic system.Spread out
It is symmetrically smooth to penetrate peak peak type, baseline straightening, the sample crystallization shown is good.There is no visible dephasign peak in diffraction spectrogram,
Illustrate that sample is pure single, it is free from foreign meter.We are scanned formula electron microscope (SEM) test to the sample on silicon wafer, such as
Fig. 4 (b) is high power lens test, and 4 (B) are low power lens test.As can be seen from the figure match bar type nano indium oxide is evenly distributed,
Pattern is uniform, and in 30-60nm, body part average diameter exists the match bar type nano indium oxide head average diameter grown
35-60nm, the average length of match bar type nano indium oxide are 100-200nm.
Embodiment 2
Reactive group bottom silicon wafer is successively 20 minutes ultrasonic respectively in acetone, alcohol, deionized water, it is dried up with high pure nitrogen
Obtain pure silicon wafer.Reactive group bottom dips even-grained 9nm gold particle solution on plated film pulling machine, keeps certain and mentions
Pulling rate degree.It will be placed in gold-plated silicon wafer and indium powder such as embodiment 1, using identical experiment condition.After reaction, it is reacting
Pure match bar type nano indium oxide is obtained in substrate.
We have carried out X-ray diffraction (XRD) test to gained sample, and the sample as obtained by test discovery is pure oxygen
Change indium.Fig. 5 be to sample carry out the face EDS sweep test, from spectrogram can be seen that sample be made of pure indium oxide, and
Match bar type nano indium oxide head EDS display reaction is the catalytic action due to gold.The correlation theory of binding crystal growth, I
Sum up the growth course of match bar type nano indium oxide and be divided into three phases: the first stage, after heating on indium and substrate
Gold particle to form alloy liquid droplet since eutectic acts on.Second stage, indium and reaction gas agglomerate nucleation, atomic quantity at drop
Over balance concentration leads to the supersaturation of drop, and crystallization can be precipitated under alloy, starts to grow match bar type nano indium oxide
Body part.Phase III, with being continuing to supply for reaction gas and reactant, match bar type nano indium oxide is along same
Direction continued growth forms whisker, and final alloy drop will be left on the top of match bar type nano indium oxide.In order to further
Sample is characterized, we are scanned formula electron microscope (SEM) test to sample, if Fig. 4 (c) is that high power lens is tested, 4
(C) it is tested for low power lens.We can see that the head average diameter of grown match bar type nano indium oxide is from image
50-70nm, body part average diameter is in 45-70nm, and average length is in 150-400nm.We also carry out transmission-type to sample
Electron microscope (TEM) test, Fig. 6 (a) are match bar type nano indium oxide transmission overview images, we choose such as the position Fig. 6 (b)
It sets and carries out high-resolution test, we can calculate body part interplanar distance d=0.506nm from figure, and along (200) face
Growth.It chooses the position Fig. 6 (c) and carries out electronic diffraction test, we can see that diffraction spot from electronic diffraction picture Fig. 6 (d)
Point is evenly distributed, and spot shape is regular, is in periodic arrangement, shows that resulting sample is monocrystalline and crystallinity is good.Pass through meter
It is cubic phase that calculation, which obtains match bar type nano indium oxide, and is grown along (020) and (200) crystal face.
Fig. 4 (a) and (A) be respectively 3nm scan image under high power lens and low power lens, it can be seen that being grown from image
Match bar type nano indium oxide head average diameter exists in 20-40nm, body part average diameter in 25-40nm, average length
50-150nm, in conjunction with above-mentioned specific embodiment and other embodiments, we have concluded that the growth of match bar type nano indium oxide
The relationship graph such as table 2 of size and Au catalyst size, as can be seen from the table, the head of match bar type nano indium oxide
Average diameter range is in 20-70nm, and body part average diameter range is in 25-70nm, and match stick average length range is in 50-
400nm。
The relational graph of table 2 match bar type nano indium oxide growth size and Au catalyst size
Fig. 4 (a) and (A) be respectively 3nm scan image under high power lens and low power lens, it can be seen that being grown from image
Match bar type nano indium oxide head average diameter exists in 20-40nm, body part average diameter in 25-40nm, average length
50-150nm, in conjunction with above-mentioned specific embodiment and other embodiments, we have concluded that the growth of match bar type nano indium oxide
The relationship graph such as table 2 of size and Au catalyst size, as can be seen from the table, the head of match bar type nano indium oxide
Diameter range is in 20-70nm, and body part diameter range is in 25-70nm, and match stick length range is in 50-400nm.
Only preferred embodiments of the present invention will be described for embodiment described above, not to the scope of the present invention into
Row limits, and without departing from the spirit of the design of the present invention, those of ordinary skill in the art do technical solution of the present invention
Various changes and improvements out should all be fallen into the protection scope that claims of the present invention determines.
Claims (2)
1. a kind of method of controllable preparation match bar type nano indium oxide, it is characterised in that: reaction source indium powder is placed in the first temperature
The silicon wafer cleaned up is dipped even-grained 1-10nm gold particle solution and is placed in the second warm area center, indium source by district center
The distance between reactive group bottom silicon wafer is 10cm；Using vacuum pump by the inside vacuum pumping of tube furnace, be passed through argon gas until
Reaction temperature changes logical oxygen, closes oxygen after reaction and is passed through argon gas to room temperature, takes out sample after cooling.
2. a kind of method of controllable preparation match bar type nano indium oxide according to claim 1 is it is characterized by: catalysis
Agent is the gold nano grain that size uniformity is evenly distributed, and the size after gold particle annealing is uniform；This experiment uses two
Diameter is 3.5cm, and length is the Boiling tube closed at one end of 30cm, and two test tube mouths are staggered relatively and at a distance of 10cm, respectively
It is placed on the first warm area and the second warm area；The reaction temperature is 850 DEG C -1000 DEG C, and reaction gas flow is argon gas 20sccm-
80sccm, oxygen 20sccm-80sccm, reaction time 1h-2h.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101062779A (en) * | 2006-04-29 | 2007-10-31 | 湖南大学 | Method for In2O3 nano thread low-temperature original position growth |
| CN107032389A (en) * | 2017-06-16 | 2017-08-11 | 宁波大学 | A kind of porous oxidation indium nano material and preparation method thereof |
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2019
- 2019-04-29 CN CN201910353034.1A patent/CN110002491B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101062779A (en) * | 2006-04-29 | 2007-10-31 | 湖南大学 | Method for In2O3 nano thread low-temperature original position growth |
| CN107032389A (en) * | 2017-06-16 | 2017-08-11 | 宁波大学 | A kind of porous oxidation indium nano material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| AHSANULHAQ QURASHI等: "Catalyst supported growth of In2O3 nanostructures and their hydrogen gas sensing properties", 《SENSORS AND ACTUATORS B: CHEMICAL》 * |
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