CN109994502A - A kind of display device and preparation method thereof - Google Patents
A kind of display device and preparation method thereof Download PDFInfo
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- CN109994502A CN109994502A CN201711475537.3A CN201711475537A CN109994502A CN 109994502 A CN109994502 A CN 109994502A CN 201711475537 A CN201711475537 A CN 201711475537A CN 109994502 A CN109994502 A CN 109994502A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The invention belongs to the field of display device, a kind of display device and preparation method thereof is provided.It is BiOI that display device provided by the invention, which is introduced between quantum dot light emitting layer and cathode by kernel, the decorative layer that the composite material that shell is PMMA forms, one side BiOI has the characteristics that relatively narrow band gap (~1.8eV), visible light can be absorbed to the maximum extent, electronics transits to conduction band from valence band in this way, generates electron-hole pair；Another aspect BiOI has unique layer structure, makes corresponding atom and atomic orbital have enough spaces to be polarized, can effectively realize the separation of photo-generate electron-hole pair；Meanwhile BiOI belongs to indirect band gap compound, the electronics being excited cannot be returned directly to valence band, it is suppressed that electrons and holes it is compound；And PMMA shell can effectively stop the lower light induced electron of energy and make the higher light induced electron escape of energy, so that device can adjust electron injection efficiency, balance electrons and holes, improve the efficiency of device.
Description
Technical field
The invention belongs to the field of display devicees more particularly to a kind of display device and preparation method thereof.
Background technique
Quanta point material due to it with photochromic purity is high, luminous quantum efficiency is high, luminescent color is adjustable, quantum yield is high
The advantages that, in addition can be used in printing technology preparation, so light emitting diode (the Quantum Dot Light based on quantum dot
Emitting Diode, QLED) recently by the common concern of people, device performance index is also quickly grown.
Currently, although continuing to optimize by improvement to quanta point material and QLED device architecture, existing QLED
The efficiency of device and service life are all greatly enhanced, but its efficiency still differs farther out with the requirement of industrialization production.
Wherein, the injection imbalance of carrier is to influence a main cause of the device efficiency of QLED.For example, in blue-light device,
Electronics belongs to few son, and the performance of Yao Tigao device must increase electron injection, in green device, the note of electrons and holes
Enter in a basic balance, and in red device, electronics belongs to mostly sub, and the performance of Yao Tigao device must suitably slow down electronics note
Enter.
Therefore, existing white light display part has lower efficiency and service life since the injection of carrier is uneven,
If when preparing in particular by Method of printing, if a kind of material can be used, using one during actually preparing display device
A print cartridge effectively improves the carrier balance of white light display part, will optimize preparation flow significantly, reduces production cost.
Summary of the invention
The purpose of the present invention is to provide a kind of display devices and preparation method thereof, it is intended to solve existing display device and deposit
There is the problem of lower efficiency and service life in the injection imbalance due to carrier.
The present invention provides a kind of display device, the display device includes anode, quantum dot light emitting layer, decorative layer, yin
Pole, the quantum dot light emitting layer are arranged between the anode and the cathode, and the decorative layer is arranged in quantum dot light emitting layer
Between cathode, the decorative layer is BiOI by kernel, and the composite material that shell is PMMA forms, the quantum dot light emitting layer packet
Include red quantum dot layer, green quantum dot layer and blue quantum dot layer.
The present invention also provides a kind of preparation method of display device, the preparation method includes the following steps:
Prefabricated device is provided, distinguish on prefabricated device deposit red quantum dot, green quantum dot, blue quantum dot at
Quantum dot light emitting layer；
Laminated film is deposited on the quantum dot light emitting layer forms decorative layer, the laminated film is BiOI by kernel,
The composite material that shell is PMMA forms；Or
Prefabricated device is provided, laminated film is deposited on prefabricated device and forms decorative layer, the laminated film is by kernel
BiOI, the composite material that shell is PMMA form；
Deposit red quantum dot, green quantum dot, blue quantum dot are distinguished on the decorative layer into quantum dot light emitting
Layer.
Display device provided by the invention and preparation method thereof, by introducing between quantum dot light emitting layer and cathode by interior
Core is BiOI, and the decorative layer that the composite material that shell is PMMA forms can adjust electron injection efficiency, keeps electrons and holes flat
Weighing apparatus, improve the efficiency of device: one side BiOI has the characteristics that relatively narrow band gap (~1.8eV), and can absorb to the maximum extent can
Light-exposed, such electronics transits to conduction band from valence band, generates electron-hole pair；Another aspect BiOI has unique layer structure,
Make corresponding atom and atomic orbital there are enough spaces to be polarized, the separation of photo-generate electron-hole pair can be effectively realized；Together
When, BiOI belongs to indirect band gap compound, and the electronics being excited cannot be returned directly to valence band, it is suppressed that electrons and holes are answered
It closes；And PMMA shell can effectively stop the lower light induced electron of energy and make the higher light induced electron escape of energy.Together
When, the preparation method of the device is easy to operate, and it is at low cost, it is conducive to large-scale production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the display device that one embodiment of the present of invention provides；
Fig. 2 is the structural schematic diagram for the quantum dot light emitting layer that one embodiment of the present of invention provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The embodiment of the invention provides a kind of display device, including anode, quantum dot light emitting layer, decorative layer, cathode, quantum
Between the anode and the cathode, decorative layer is arranged between quantum dot light emitting layer and cathode the setting of point luminescent layer, and decorative layer is by kernel
For BiOI, the composite material that shell is PMMA is formed, quantum dot light emitting layer include red quantum dot layer, green quantum dot layer and
Blue quantum dot layer.
Wherein, it may be inverted structure that display device, which can be positive and set structure,.Further, display device can also wrap
Include the hole functional layer being arranged between anode and quantum dot light emitting layer；And/or the electronics between cathode and decorative layer is set
Functional layer.
For just setting the display device of structure, in one of the embodiments, as shown in Figure 1, display device include according to
Substrate 1, anode 2, hole functional layer 3, quantum dot light emitting layer 4, decorative layer 5, electronic work ergosphere 6 and the cathode 7 of secondary setting.It needs
It should be noted that the display device of inverted structure is equally applicable to the description of each layer of the display device for just setting structure below.
In embodiments of the present invention, the selection of substrate 1 is unrestricted, can use flexible substrate, can also use hard
Substrate；Anode 2 is made of conventional anode material, preferably can be ITO electro-conductive glass.
In embodiments of the present invention, hole functional layer 3 includes hole injection layer and/or hole transmission layer, wherein hole note
Enter layer preferably with a thickness of 1nm-100nm, hole transmission layer is preferably with a thickness of 1nm-100nm.
In embodiments of the present invention, the material of quantum dot light emitting layer 4 is mainly common red quantum dot, green quantum dot
And blue quantum dot, wherein on the direction for being parallel to anode 2, quantum dot light emitting layer 4 can be by the amount of red that is arranged alternately
Son point layer, green quantum dot layer and blue quantum dot layer composition (refer to Fig. 2,41,42,43 respectively correspond red quantum dot
Layer, green quantum dot layer and blue quantum dot layer).
In embodiments of the present invention, 5 thickness of decorative layer is about 1-10nm, the blocked up injection that can seriously affect electronics of thickness,
Reduce the performance of device.Decorative layer 5 is BiOI by kernel, and the composite material that shell is PMMA forms.Wherein, BiOI mainly passes through
Solution polymerization process is first modified BiOI using coupling agent, so that BiOI is by coupling agent in conjunction with PMMA shell；PMMA
Shell with a thickness of 1-5nm, within this range, be conducive to the dispersion of BiOI-PMMA composite material, and play it not homochromy
Regulating and controlling effect in device is conducive to the light induced electron generated in blue-light device and escapes to come from PMMA shell, and effectively resistance
The light induced electron generated in gear red device is fled from.
Specifically, the functional characteristics that decorative layer 5 is combined with BiOI and PMMA shell: BiOI has relatively narrow band gap
(~1.8eV) visible light can be absorbed to the maximum extent, such electronics transits to conduction band from valence band, generates electron-hole pair；BiOI
With unique layer structure, special layer structure makes corresponding atom and atomic orbital have enough spaces to be polarized, energy
Effectively realize the separation of photo-generate electron-hole pair；Secondly BiOI belongs to indirect band gap compound, and the electronics being excited cannot be straight
Take back valence band, it is suppressed that electrons and holes it is compound；The PMMA shell of grafting can effectively stop the lower photoproduction electricity of energy
Son and make energy higher light induced electron escape.
More specifically, decorative layer 5 is stacked with quantum dot light emitting layer 4, and close to the side of cathode.When decorative layer 5 is set
When between blue quantum dot and electronic work ergosphere, since electronics belongs to for few son, i.e. electricity in the luminescent device of blue light quantum point
Subnumber amount is less than number of cavities, and under the action of extra electric field, blue light quantum point emits blue light, wherein the light of directive cathode is (about
It 2.67ev) is absorbed by BiOI, generates electronics and hole, since the blue light of the higher-energy of blue light quantum point transmitting can make BiOI
The light induced electron of generation escapes from the PMMA shell of several nanometer thickness, these electronics can be infused again under the action of extra electric field
Enter in blue quantum dot, to improve the injection of electronics, balance electrons and holes, improves the efficiency of device.When it is placed in
When between green quantum dot and electronic work ergosphere, since electrons and holes are in a basic balance in green light quantum point device, it is powered on outside
Off field, green light quantum point issues green light, and wherein the light (about 2.23ev) of directive cathode is absorbed by BiOI, generates electronics and hole,
Light induced electron energy is less than 2.23ev at this time, and only a small amount of electronics can escape from the PMMA shell of several nanometer thickness,
Under DC Electric Field, in this part light induced electron or the green quantum dot of injection；And this layer of decorative layer 5 containing PMMA because insulating
Material, at the same again can electronics of the stop portions from cathode to quantum dot light emitting layer so that the electronics of quantum dot light emitting layer and
Hole can balance, and improve the efficiency of device.When it is placed between red quantum dot and electron transfer layer, due to red quantum
Electronics belongs to be mostly sub in point device, i.e., electron amount is more than number of cavities, under the action of extra electric field, red light quantum point hair
Feux rouges out, wherein the light (about 1.97ev) of directive cathode is absorbed by BiOI, and red light wavelength has been approached the absorption band edge of BiOI at this time,
A small amount of electronics and hole are generated, and the energy of light induced electron is lower, stopped by PMMA shell, decorative layer 5 mainly rises at this time
Electron injection from slowing down cathode to quantum dot light emitting layer effect, balance electrons and holes, improve the efficiency of device.
The above are be directed to the description that decorative layer is applied to display device, it is notable that the material of decorative layer
It can be applied in the luminescent device of monochromatic quantum dot, for example, directly applying to the luminescent device of blue or shining for red
In device, the mechanism of action is ibid described.
In embodiments of the present invention, electronic work ergosphere 6 includes electron transfer layer and/or electron injecting layer, and wherein electronics passes
Defeated layer preferably has the N-shaped zinc oxide of high electronic transmission performance, preferably with a thickness of 30-60nm；Electron injecting layer material
It can choose the Ca of low work function, the metals such as Ba also can choose CsF, LiF, CsCO3Equal compounds, can also be other electricity
Solve matter type electron transport layer materials ZnAlO, ZnMgO, TiO2。
In embodiments of the present invention, the selection of 7 material of cathode is unrestricted, can be Ag, Al, Cu, Au and alloy electricity
One of pole.It is preferably with a thickness of 60-120nm.
Display device provided in an embodiment of the present invention, introduces between quantum dot light emitting layer and cathode and is by kernel
BiOI, the decorative layer that the composite material that shell is PMMA forms, can adjust electron injection efficiency, balance electrons and holes,
Improve the efficiency of device: one side BiOI has the characteristics that relatively narrow band gap (~1.8eV), can absorb to the maximum extent visible
Light, such electronics transit to conduction band from valence band, generate electron-hole pair；Another aspect BiOI has unique layer structure, makes
Corresponding atom and atomic orbital have enough spaces to be polarized, and can effectively realize the separation of photo-generate electron-hole pair；Together
When, BiOI belongs to indirect band gap compound, and the electronics being excited cannot be returned directly to valence band, it is suppressed that electrons and holes are answered
It closes；And PMMA shell can effectively stop the lower light induced electron of energy and make the higher light induced electron escape of energy.
The embodiment of the invention provides a kind of preparation methods of display device, are used to prepare out the aobvious of a corresponding upper embodiment
Show device.
Specifically, when the display device of preparation be eurymeric structure devices when, the preparation method the following steps are included:
Step S11: providing prefabricated device, and deposit red quantum dot, green quantum dot, amount of blue are distinguished on prefabricated device
Son point forms quantum dot light emitting layer.
In embodiments of the present invention, provided prefabricated device can be include substrate, anode, quantum dot light emitting layer deposition
In on anode；Or including substrate, anode, hole functional layer, quantum dot light emitting layer is located in the functional layer of hole, wherein hole function
Ergosphere can be at least one layer in hole injection layer, hole transmission layer.
Step S12: depositing laminated film on quantum dot light emitting layer and form decorative layer, and laminated film is BiOI by kernel,
The composite material that shell is PMMA forms.
Specifically, when the display device of preparation be reciprocal form structure device when, the preparation method the following steps are included:
Step S21: providing prefabricated device, and laminated film is deposited on prefabricated device and forms decorative layer, laminated film is by interior
Core is BiOI, and the composite material that shell is PMMA forms.
In embodiments of the present invention, provided prefabricated device can be include substrate, cathode, decorative layer is deposited on cathode
On；Or including substrate, cathode, electronic work ergosphere, decorative layer is located on electronic work ergosphere, and wherein electronic work ergosphere can be electricity
At least one layer in sub- implanted layer, electron transfer layer.
Step S22: deposit red quantum dot, green quantum dot, blue quantum dot are distinguished on decorative layer into quantum dot
Luminescent layer.
Further, in embodiments of the present invention, after step s 12 further include:
Step S13: electronic work ergosphere and cathode are sequentially depositing on decorative layer.
After step s 22 further include:
Step S33: hole functional layer and anode are sequentially depositing on quantum dot light emitting layer.
In embodiments of the present invention, step S21, in step S22, step S23, step S11, step S12 and step S13
The associated description of the substrate, anode, hole functional layer, quantum dot light emitting layer, decorative layer, electronic work ergosphere and the cathode that are related to
The corresponding substrate being related in previous embodiment, anode, hole functional layer, quantum dot light emitting layer, decorative layer, electronic work ergosphere and
The description of cathode is consistent, no longer describes herein.
In embodiments of the present invention, the method for the deposition involved in above-mentioned steps can be chemical method or physical method,
Middle chemical method includes but is not limited to chemical vapour deposition technique, successive ionic layer adsorption and reaction method, anodizing, electrolytic deposition
One of method, coprecipitation are a variety of；Physical method includes but is not limited to physical coating method or solwution method, and wherein solwution method includes
But it is not limited to spin-coating method, transfer printing, print process, knife coating, dip-coating method, infusion method, spray coating method, roll coating process, casting method, narrow
Seam rubbing method, strip rubbing method；Physical coating method includes but is not limited to thermal evaporation coating method, electron beam evaporation deposition method, magnetic
Control sputtering method, multi-arc ion coating embrane method, physical vaporous deposition, atomic layer deposition method, one of pulsed laser deposition or
It is a variety of.
In embodiments of the present invention, in step S12 and step S21, for the thickness control of decorative layer in 1-10nm, thickness is blocked up
The injection that electronics can be seriously affected reduces the performance of device；When depositing laminated film simultaneously, the solubility for controlling solution or ink is
0.5-8mg/ml, concentration is excessive, and material not readily dissolves dispersion, and influences the transparency for the film being prepared, and concentration is too low then
Can not effective uptake sub- point directive cathode light, that is, be unable to the injection of Effective Regulation electronics.
It further, include the hole injection being arranged on anode with autologous luminescent device and hole functional layer
Layer, hole transmission layer, electronic work ergosphere include act for the electron transfer layer and/or electron injecting layer being arranged on decorative layer
Illustrate preparation method to example property:
(1) by clean ito substrate oxygen gas plasma or UV-ozone processing ito substrate surface treatment, with into one
Step removes the organic matter of the surface ITO attachment and improves the work function of ITO, and UV-ozone processing can also be used to complete in this process.
(2) one layer of hole injection layer, the thickness 1-100nm of control layer, hole note are deposited on processed ito substrate surface
Entering material can be water-soluble PEDOT:PSS, be also possible to other materials with good hole injection efficiency, herein preferably
PEDOT:PSS is as hole injection layer.
(3) substrate is placed in nitrogen atmosphere, deposits one layer of hole transmission layer, this hole transport on hole injection layer surface
Material can be common PVK, Poly-TPD, be also possible to their mixture, can also be that other high performance holes pass
Defeated material, the thickness of hole transport layer 1-100nm deposited.
(4) it deposits red, green, blue color quantum dot respectively on the hole transport layer, obtains the quantum dot light emitting of R, G, B three primary colours
Layer.
(5) one layer of laminated film is deposited on the quantum dot light emitting layer of three primary colours, is controlled with a thickness of 1-10nm, is deposited simultaneously
When solution or ink concentration be 0.5-8mg/ml.
(6) redeposited one layer of electron transfer layer and/or electron injecting layer, wherein electron transfer layer preferably has high electronics
The N-shaped zinc oxide of transmission performance, preferably with a thickness of 30-60nm；Electron injecting layer material can choose the Ca of low work function,
The metals such as Ba also can choose CsF, LiF, CsCO3Equal compounds, can also be other Electrolyte type electron transport layer materials,
Such as ZnAlO, ZnMgO, TiO2。
(7) finally, piece is placed in vapor deposition storehouse through one layer of cathode of mask plate hot evaporation, thickness 60-120nm is obtained
Luminescent device.
Further, the specific embodiment of above-mentioned preparation method is given below:
(1) firstly, the ito substrate that will be patterned into is placed in acetone in order, washing lotion is carried out in deionized water and isopropanol
Ultrasonic cleaning, each of the above step ultrasound are both needed to lasting 15 minutes or so.It is dried after which ITO is placed in cleaning oven after the completion of ultrasound
It does spare.
(2) after ito substrate drying, the processing surface ITO is handled 5 minutes further to remove the surface ITO with UV-ozone
The organic matter of attachment and the work function for improving ITO.
(3) in one layer of PEDOT:PSS of processed ito substrate printout surface, this thickness degree 30nm, and substrate is placed in
30 minutes are heated on 150 DEG C of warm table to remove moisture, this step need to be completed in air.
(4) substrate for being coated with hole injection layer after drying is placed in nitrogen atmosphere, prints one layer of hole transmission layer material
Expect TFB, this layer with a thickness of 30nm, then vacuumize 30min under 10pa pressure again to remove solvent, and place it in 150 DEG C
Warm table on heat 30 minutes.
(5) after piece of previous step processing is cooling, red, green, blue color quantum dot ink is printed upon the surface TFB respectively,
It is with a thickness of 20nm.Piece is placed under 10pa pressure after the completion of the deposition of this step and vacuumizes 30min to remove solvent, then
It is placed on 80 DEG C of warm table and heats 10 minutes, remove remaining solvent.
(6) after piece is cooling, then by composite material ink printed that concentration is 4mg/ml on quantum dot layer, then again
30min is vacuumized under 10pa pressure to remove solvent, be subsequently placed on 80 DEG C of warm table heat 10 minutes it is molten to remove
Agent.Then, redeposited electron transfer layer ZnO, with a thickness of 30nm.
(7) finally, piece for having deposited each functional layer is placed in vapor deposition storehouse through one layer of 100nm's of mask plate hot evaporation
Aluminium is as cathode, with a thickness of 100nm.Device preparation is completed.
Wherein, laminated film specifically prepares by the following method:
Step S01: providing BiOI, carries out surface to BiOI by coupling agent and is modified, and obtains modified BiOI.
In embodiments of the present invention, to improve the compatibility between polymer and BiOI particle, first with coupling agent to surface
It is modified, with the set for promoting BiOI particle subsequent with PMMA shell；Coupling agent is specially silane coupling agent, can be methyl
Acryloxypropyl trimethoxy silane (MPS), 3- aminopropyl triethoxysilane (APTES) or other silane coupling agents, make
Its hydroxyl of alkoxy grp having directly with the surface BiOI reacts, to be grafted to BiOI particle surface, reaches modified
Purpose.
Step S02: dispersing modified BiOI in polar solvent, be stirring evenly and then adding into methyl methacrylate monomer into
Row reaction obtains surface in conjunction with the mixed solution of the modified BiOI of methyl methacrylate monomer.
In embodiments of the present invention, using solution polymerization process in modified BiOI surface grafting hydrophobic monomer methacrylic acid
Methyl esters (MMA), substantially BiOI is by coupling agent in conjunction with PMMA shell.Wherein, polar solvent includes but is not limited to N, N-
Dimethylformamide (DMF).
Step S03: being stirred heating for mixed solution, and initiator is added and carries out polymerization reaction, makes methacrylic acid
Methylmethacrylate monomer polymerization generates PMMA, obtains composite material solution, composite material solution is deposited on substrate, forms THIN COMPOSITE
Film.
In embodiments of the present invention, laminated film thickness is about 1-10nm, and thickness is blocked up to seriously affect thin film electronic
Injection, reduces the performance of film.
In embodiments of the present invention, step S03, which specifically can be, pulls the continuous telluric magnetic force of mixed solution that step 02 obtains
It mixes down, is slowly heated, and initiator is added and is reacted under slow stream of nitrogen gas, obtains composite material solution, then will
Composite material solution deposits on substrate, forms laminated film.
In embodiments of the present invention, in the case that the amount of monomer being added in step 02 is certain, in actual fabrication process
The thickness of PMMA shell can be controlled by controlling the additional amount of initiator, by its thickness control in 1-5nm, in this range
It is interior, be conducive to the dispersion of composite film material, and play its regulating and controlling effect in different color devices, that is, be conducive to blue light device
The light induced electron generated in part escapes to come from PMMA shell, and the light induced electron that effectively generates in block red light device is escaped
From.Wherein, initiator includes but is not limited to potassium sulfate (KPS).
Citing further illustrates the preparation method of laminated film below:
It (1) is 1.0g with the quality that electronic balance weighs BiOI, the dry toluene that pipette measures 15mL is placed in 100mL's
In three-necked flask, ultrasound about 1min, is allowed to uniformly mixed in ultrasonic washing instrument.
(2) the silane coupling agent MPS of 2.0g is weighed in the mixed solution of above-mentioned (1) dry toluene and BiOI, and uses N2
It will be caught up in air in bottle to the greatest extent, this three-necked flask plus condensation reflux unit and immersed in oil bath pan, adjust turning for oil bath pan
Speed is 400r/min, in N2Under the conditions of, 110 DEG C are gradually warming up to, 12h is reacted.
(3) reaction system is exposed in air and is cooled to room temperature, be then centrifuged, divided under ultrasound with dry toluene
From being placed in vacuum, 50 DEG C of dryings for 24 hours, finally obtain modified BiOI-MPS powder after washing is clean for several times.
(4) the BiOI-MPS powder for weighing the modification of 0.3g is scattered in 15ml n,N-Dimethylformamide (DMF), ultrasound 1
After minute, 10.65ml monomer MMA is added, and this dispersion mixing solution transfer 100ml is had into N2The three of entrance and condensing reflux
In mouth bottle, continues ultrasonic disperse, then use N2Air in bottle is caught up with to the greatest extent.
(5) by above-mentioned (4) solution in 1h, continuous telluric magnetic force is whisked down, is heated slowly to 70 DEG C, and initiator KPS is added,
70 DEG C of reaction 3h, obtain composite material solution, composite material solution are deposited on substrate under slow stream of nitrogen gas, standby
With.
The preparation method of display device provided by the invention, by being introduced between quantum dot light emitting layer and cathode by multiple
The decorative layer for closing film composition, can adjust electron injection efficiency, balance electrons and holes, improve the efficiency of device, meanwhile,
The preparation method is easy to operate, at low cost, conducive to the large-scale production of device.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within principle.
Claims (10)
1. a kind of display device, which is characterized in that the display device includes anode, quantum dot light emitting layer, decorative layer, cathode,
The quantum dot light emitting layer is arranged between the anode and the cathode, and the decorative layer setting is in quantum dot light emitting layer and yin
Between pole, the decorative layer is BiOI by kernel, and the composite material that shell is PMMA forms, and the quantum dot light emitting layer includes red
Color quantum dot layer, green quantum dot layer and blue quantum dot layer.
2. display device as described in claim 1, which is characterized in that on the direction for being parallel to anode, the quantum dot hair
Photosphere is made of the red quantum dot layer, the green quantum dot layer and the blue quantum dot layer being arranged alternately.
3. display device as described in claim 1, which is characterized in that the BiOI and PMMA is combined by coupling agent.
4. display device as claimed in claim 3, which is characterized in that the coupling agent is methacryloxypropyl trimethoxy
One kind in base silane, 3- aminopropyl triethoxysilane at least.
5. display device according to any one of claims 1-4, which is characterized in that the shell with a thickness of 1-5nm.
6. display device according to any one of claims 1-4, which is characterized in that the decorative layer with a thickness of 1-10nm.
7. display device according to any one of claims 1-4, which is characterized in that the display device further includes being arranged in institute
State the hole functional layer between anode and the quantum dot light emitting layer；And/or
Electronic work ergosphere between the cathode and the decorative layer is set.
8. a kind of preparation method of display device, which is characterized in that the preparation method includes the following steps:
Prefabricated device is provided, deposit red quantum dot, green quantum dot, blue quantum dot are distinguished on prefabricated device into quantum
Point luminescent layer；
Laminated film is deposited on the quantum dot light emitting layer and forms decorative layer, and the laminated film is BiOI, shell by kernel
It is formed for the composite material of PMMA；Or
Prefabricated device is provided, laminated film is deposited on prefabricated device and forms decorative layer, the laminated film is BiOI by kernel,
The composite material that shell is PMMA forms；
Deposit red quantum dot, green quantum dot, blue quantum dot are distinguished on the decorative layer into quantum dot light emitting layer.
9. preparation method as claimed in claim 8, which is characterized in that the concentration of solution is 0.5- when the laminated film deposits
8mg/ml。
10. preparation method as claimed in claim 8 or 9, which is characterized in that the laminated film is prepared by the following method to be obtained
:
BiOI is provided, surface is carried out to BiOI by coupling agent and is modified, obtains modified BiOI；
It disperses the modified BiOI in polar solvent, is stirring evenly and then adding into methyl methacrylate monomer and is reacted,
Surface is obtained in conjunction with the mixed solution of the modified BiOI of methyl methacrylate monomer；
The mixed solution is stirred heating, and initiator is added and carries out polymerization reaction, makes methyl methacrylate monomer
Polymerization generates PMMA, obtains composite material solution, the composite material solution is deposited on substrate, forms laminated film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711475537.3A CN109994502B (en) | 2017-12-29 | 2017-12-29 | Display device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113258008A (en) * | 2020-02-12 | 2021-08-13 | 吉林大学 | Quantum dot electroluminescent device, and lighting device and display device including the same |
| WO2022188113A1 (en) * | 2021-03-11 | 2022-09-15 | 京东方科技集团股份有限公司 | Green quantum dot light-emitting device and manufacturing method therefor, and display apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160035979A1 (en) * | 2013-04-10 | 2016-02-04 | Postech Academy - Industry Foundation | Inverse-structure organic light emitting diode and manufacturing method therefor |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| CN106549110A (en) * | 2016-11-07 | 2017-03-29 | 东南大学 | A kind of high efficiency blue light emitting diode with quantum dots and preparation method thereof |
-
2017
- 2017-12-29 CN CN201711475537.3A patent/CN109994502B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160035979A1 (en) * | 2013-04-10 | 2016-02-04 | Postech Academy - Industry Foundation | Inverse-structure organic light emitting diode and manufacturing method therefor |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| CN106549110A (en) * | 2016-11-07 | 2017-03-29 | 东南大学 | A kind of high efficiency blue light emitting diode with quantum dots and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李微: "复合BiOI材料的制备及其在印染废水中的应用", 《中国优秀硕士学位论文全文数据库（工程科技I辑）》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113258008A (en) * | 2020-02-12 | 2021-08-13 | 吉林大学 | Quantum dot electroluminescent device, and lighting device and display device including the same |
| WO2022188113A1 (en) * | 2021-03-11 | 2022-09-15 | 京东方科技集团股份有限公司 | Green quantum dot light-emitting device and manufacturing method therefor, and display apparatus |
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