CN109950138A - A kind of nanometer column array heterojunction and preparation method thereof - Google Patents
A kind of nanometer column array heterojunction and preparation method thereof Download PDFInfo
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- CN109950138A CN109950138A CN201910290197.XA CN201910290197A CN109950138A CN 109950138 A CN109950138 A CN 109950138A CN 201910290197 A CN201910290197 A CN 201910290197A CN 109950138 A CN109950138 A CN 109950138A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 43
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims abstract description 25
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 5
- 230000008020 evaporation Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000007812 deficiency Effects 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000005619 thermoelectricity Effects 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
The present invention relates to nanostructure technology fields more particularly to a kind of nanometer column array heterojunction and preparation method thereof.The present invention provides a kind of preparation methods of nanometer column array heterojunction, comprising: is first turned on Bi2Te3Bi is deposited on substrate in evaporation2Te3, Bi is closed later2Te3Evaporation source, then by Sb2Te3Evaporation source, which is opened, to carry out vacuum evaporation and collects product on substrate.The present invention provides a kind of nanometer column array heterojunction and preparation method thereof, solves the technological deficiency for lacking 1-dimention nano column array heterojunction in the prior art and preparing nanometer column array heterojunction using vacuum thermal evaporation technology.
Description
Technical field
The present invention relates to nanostructure technology fields more particularly to a kind of nanometer column array heterojunction and preparation method thereof.
Background technique
V-VI compounds of group is shaped like A2B3Material since it is with excellent thermoelectricity capability, and be widely used in the temperature difference hair
The fields such as electricity, thermoelectric cooling, among these, tellurides series material is had excellent performance.Currently, studying both at home and abroad and more being
Bi2Te3The composite material of base.
Bi2Te3It is a kind of narrow bandgap semiconductor material, belongs to trigonal system, crystal is in layer structure, is had preferable
Electric conductivity is widely used in the refrigeration and power generation of near room temperature since the material has excellent thermoelectricity capability near room temperature,
It is the room temperature thermoelectric material system applied in current thermoelectric material by widespread commercial.
Sb2Te3Be also a kind of semiconductor material, belong to trigonal system, crystal also shows layer structure, symmetry compared with
Height, adjacent interlayer are combined between interlayer by Van der Waals force by Covalent bonding together, and this layer structure is conducive to improve thermoelectricity
Performance equally has excellent thermoelectricity capability at room temperature, is attracted attention by numerous researchers.
Recent studies indicate that nano material because its with unique excellent physicochemical properties, in industrial skill
Art application aspect shows huge application value.Song Fengqi seminar, Wang Guanghou academician team, Nanjing University uses solvent-thermal method
Synthesize Sb2Te3/Bi2Te3Lateral hetero-junctions nanometer sheet, refering to Nano Lett., 2015,15 (9), pp 5905-5911；
Venkatasubramanian et al. is prepared for Bi with metal organic vapor phase epitaxy method2Te3/Sb2Te3Nano super-lattice is thin
Film, refering to Journal of Crystal Growth, 1997,170 (1): 817-821；Cheng et al. is prepared with solvent-thermal method
T-type Bi out2T3The heterogeneous nano junction of-Te, including the Bi of rhombohedral structure2Te3The Te of nanometer sheet and trigonal system structure
Nanometer rods, refering to The Journal of Physical Chemistry C, 2013,117 (24): 12458-12464.
Above-mentioned report can be seen that the research of two-dimensional nano hetero-junctions is in the majority, and preparation method is complex.And 1-dimention nano is different
Matter knot can have unique performance because of small size, high surface volume ratio and quantum confinement effect.Bi2Te3/Sb2Te3It is one-dimensional
Nanometer column array heterojunction has not been reported, also, prepares Bi using vacuum thermal evaporation technology2Te3/Sb2Te3Nano column array is different
Matter knot also has not been reported.
Summary of the invention
The present invention provides a kind of nanometer column array heterojunction and preparation method thereof, solve lack in the prior art it is one-dimensional
Nanometer column array heterojunction and the technological deficiency that nanometer column array heterojunction is prepared using vacuum thermal evaporation technology.
The present invention provides a kind of preparation methods of nanometer column array heterojunction, comprising:
It is first turned on Bi2Te3Bi is deposited on substrate in evaporation2Te3, Bi is closed later2Te3Evaporation source, then by Sb2Te3It steams
The opening that rises carries out vacuum evaporation and collects product on substrate.
Preferably, the substrate quartz glass substrate.
Preferably, Bi2Te3Evaporation source and Sb2Te3Evaporation source and substrate distance are 5cm.
Preferably, the Bi2Te3The temperature of evaporation source is 520 DEG C.
Preferably, the Sb2Te3The temperature of evaporation source is 550 DEG C.
Preferably, the Bi2Te3Pressure is 9 × 10 when evaporation source is deposited-5Pa, the Sb2Te3Pressure when evaporation source is deposited
It is 7 × 10-5Pa。
Preferably, Bi2Te3Evaporation source and Sb2Te3Evaporation source evaporation time is 20 minutes.
Preferably, the equipment of the vacuum evaporation is multi-source high vacuum thermal evaporation coating machine.
The present invention provides a kind of nanometer column array heterojunctions, are made by above-mentioned preparation method.
Preferably, the shape of the nanometer column array heterojunction is polygon.
Body structure surface prepared by preparation method provided in an embodiment of the present invention is fine and close, and gap is less, and array structure is obvious.It is real
Proved recipe method is simple, and environmental pollution is small, and easily operated, popularization can carry out large area preparation, thus have important research valence
Value and wide application prospect.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without any creative labor, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is gained sample surfaces scanning electron microscope diagram in the embodiment of the present invention 1；
Fig. 2 is gained sample in cross section scanning electron microscope diagram in the embodiment of the present invention 1；
Fig. 3 is gained sample Bi distribution diagram of element in the embodiment of the present invention 1；
Fig. 4 is gained sample Te distribution diagram of element in the embodiment of the present invention 1；
Fig. 5 is gained sample Sb distribution diagram of element in the embodiment of the present invention 1.
Specific embodiment
The embodiment of the invention provides a kind of nanometer column array heterojunctions and preparation method thereof, solve and lack in the prior art
Few 1-dimention nano column array heterojunction and the technological deficiency that nanometer column array heterojunction is prepared using vacuum thermal evaporation technology.
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that disclosed below
Embodiment be only a part of the embodiment of the present invention, and not all embodiment.Based on the embodiments of the present invention, this field
Those of ordinary skill's all other embodiment obtained without making creative work, belongs to protection of the present invention
Range.
Embodiment 1
Bi is weighed respectively2Te3With Sb2Te3Molar ratio is the powder of 1:1, is respectively placed in multi-source high vacuum thermal evaporation plated film
In 2 different evaporation sources of machine, substrate uses quartz glass, and adjusting 2 evaporation sources and substrate distance is 5cm.First stage,
It is evacuated to 9 × 10-5Pa increases underlayer temperature to 250 DEG C, increases Bi later2Te3Source temperature is to 520 DEG C, vapor deposition
20min；Second stage closes Bi2Te3Evaporation source opens Sb2Te3Evaporation source is simultaneously warming up to 550 DEG C, and adjustment pressure is 7 × 10- 520min is deposited in Pa.Cool down after the completion of vapor deposition and collect product.
The nanometer column array heterojunction that the embodiment of the present invention 1 is prepared is scanned Electron microscopy.Such as Fig. 1
With shown in Fig. 2, Fig. 1 is surface scan electron microscope, it can be seen that sample surfaces form continuous film by fine and close nanoscale crystal grain.
Fig. 2 is cross-sectional scans electron microscope, it can clearly be seen that the structure of nano column array.
Elemental redistribution detection is carried out to a part of section of nanometer column array heterojunction that the embodiment of the present invention 1 is prepared.
As seen in figures 3-5, Fig. 3 is selected areas Bi distribution diagram of element, it can be seen that Bi element is evenly distributed on the lower part of film.Fig. 4 is
Selected areas Te distribution diagram of element, it can be seen that Te element is evenly distributed in film.Fig. 5 is selected areas Sb distribution diagram of element,
It can be seen that Sb element is evenly distributed on the top of film.In view of the foregoing it is apparent that this nanometer column array heterojunction upper half
It is divided into and is divided into Sb2Te3, lower half portion ingredient is Bi2Te3。
Embodiment 2
Bi is weighed respectively2Te3With Sb2Te3Molar ratio is the powder of 1:1, is respectively placed in multi-source high vacuum thermal evaporation plated film
In 2 different evaporation sources of machine, substrate uses quartz glass, and adjusting 2 evaporation sources and substrate distance is 5cm.First stage,
It is evacuated to 9 × 10-5Pa increases underlayer temperature to 250 DEG C, increases Bi later2Te3Source temperature is to 530 DEG C, vapor deposition
15min；Second stage closes Bi2Te3Evaporation source opens Sb2Te3Evaporation source is simultaneously warming up to 550 DEG C, and adjustment pressure is 7 × 10- 515min is deposited in Pa.Cool down after the completion of vapor deposition and collect product.
Embodiment 3
Bi is weighed respectively2Te3With Sb2Te3Molar ratio is the powder of 1:1, is respectively placed in multi-source high vacuum thermal evaporation plated film
In 2 different evaporation sources of machine, substrate uses quartz glass, and adjusting 2 evaporation sources and substrate distance is 5cm.First stage,
It is evacuated to 9 × 10-5Pa increases underlayer temperature to 230 DEG C, increases Bi later2Te3Source temperature is to 500 DEG C, vapor deposition
20min；Second stage closes Bi2Te3Evaporation source opens Sb2Te3Evaporation source is simultaneously warming up to 530 DEG C, and adjustment pressure is 7 × 10- 520min is deposited in Pa.Cool down after the completion of vapor deposition and collect product.
Embodiment 4
Bi is weighed respectively2Te3With Sb2Te3Molar ratio is the powder of 1:1, is respectively placed in multi-source high vacuum thermal evaporation plated film
In 2 different evaporation sources of machine, substrate uses quartz glass, and adjusting 2 evaporation sources and substrate distance is 5cm.First stage,
It is evacuated to 9 × 10-5Pa increases underlayer temperature to 260 DEG C, increases Bi later2Te3Source temperature is to 540 DEG C, vapor deposition
15min；Second stage closes Bi2Te3Evaporation source opens Sb2Te3Evaporation source is simultaneously warming up to 570 DEG C, and adjustment pressure is 7 × 10- 515min is deposited in Pa.Cool down after the completion of vapor deposition and collect product.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of preparation method of nanometer column array heterojunction characterized by comprising
It is first turned on Bi2Te3Bi is deposited on substrate in evaporation2Te3, Bi2Te is closed later3Evaporation source, then by Sb2Te3Evaporation source
It opens and carries out vacuum evaporation and collect product on substrate.
2. preparation method according to claim 1, which is characterized in that the substrate quartz glass substrate.
3. preparation method according to claim 1, which is characterized in that Bi2Te3Evaporation source and Sb2Te3Evaporation source and substrate away from
From being 5cm.
4. preparation method according to claim 1, which is characterized in that the Bi2Te3The temperature of evaporation source is 520 DEG C.
5. preparation method according to claim 1, which is characterized in that the Sb2Te3The temperature of evaporation source is 550 DEG C.
6. preparation method according to claim 1, which is characterized in that the Bi2Te3Evaporation source be deposited when pressure be 9 ×
10-5Pa, the Sb2Te3Pressure is 7 × 10 when evaporation source is deposited-5Pa。
7. preparation method according to claim 1, which is characterized in that Bi2Te3Evaporation source and Sb2Te3Evaporation source evaporation time
It is 20 minutes.
8. preparation method according to claim 1, which is characterized in that the equipment of the vacuum evaporation is multi-source high vacuum heat
Evaporation coating machine.
9. a kind of nanometer column array heterojunction, which is characterized in that the preparation method system as described in claim 1~7 any one
?.
10. nanometer column array heterojunction according to claim 9, which is characterized in that its shape is polygon.
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