CN109942297A - A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method - Google Patents
A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method Download PDFInfo
- Publication number
- CN109942297A CN109942297A CN201910198213.2A CN201910198213A CN109942297A CN 109942297 A CN109942297 A CN 109942297A CN 201910198213 A CN201910198213 A CN 201910198213A CN 109942297 A CN109942297 A CN 109942297A
- Authority
- CN
- China
- Prior art keywords
- graphite
- silicon carbide
- composite material
- nanometer line
- carbide nanometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a kind of silicon carbide nanometer lines to enhance highly oriented graphite composite material and preparation method, one layer of uniform silicon carbide nanometer line is grown as reinforced phase on its surface, it is evenly distributed between graphite flake layer, forms the anisotropic structure for the graphite flake layer that silicon carbide nanometer line enhancing aligns；The powder that silicon carbide nanometer line coats flake graphite is first prepared by molten-salt growth method using silicon powder and flake graphite as raw material in technique, then in 1600~2000 DEG C of progress discharge plasma sintering after pre-molding, the axial compressive force applied in sintering process, make the graphite flake layer oriented alignment for coating silicon carbide nanometer line, the uniform three dimensional ceramic skeleton formed after sintering, it is remarkably improved the intensity of graphite matrix, and constrain the thermal expansion of graphite, to form densification, it is high-strength, along lamella direction high heat conductance, the anisotropic composite material of vertical slice direction low thermal expansion, its excellent comprehensive performance, it will be in electronic device, the heat transfer of heat generating components, heat dissipation etc. is with a wide range of applications.
Description
Technical field
The invention belongs to thermal management materials preparation technical fields, and in particular to a kind of highly oriented stone of silicon carbide nanometer line enhancing
Black composite material and preparation method.
Background technique
With the fast development of modern science and technology, high-efficiency heat conduction is increasingly becoming the critical issue of field of heat management with heat dissipation.?
In communications electronics and semi-conductor industry, microelectronics in the equipment such as mainframe computer, laptop, opto chip device
Integrated level increases substantially, power density is increasing, and accumulation generates more heats in unit volume, if heat management does not fill
Point, temperature is excessively high, will reduce member/component working efficiency, aggravates aging.The thermal stress between device and baseplate material increases simultaneously
It will cause thermomechanical damage and problem of Cracking, cause element to scrap failure, influence its normal use.In aerospace industry, warp
The quality for reducing aircraft as far as possible, improves the thermal conductivity of device, it is ensured that each component job stability and service life reduce
Flight cost.Therefore the fields such as electronics, aerospace propose the thermal management materials as thermal control important component more next
Higher requirement.
Graphite is a kind of allotrope of carbon, belongs to hexagonal crystal system, and each carbon atom and the other three carbon are former in lamella
Son is to be covalently keyed, and in cellular multiple hexagonal arrays, piece interlayer is connected with Van der Waals force, it is made to show many property
The anisotropy of energy.Meanwhile graphite also has lightweight (density~2.26gcm-3), good high temperature resistant, heat shock resistance, anti-corruption
Corrosion energy.Especially graphite is along lamella direction high thermal conductivity (~2000Wm-1·K-1), it becomes and most sends out recently
One of the thermal management materials of exhibition prospect.But the thermal expansion since graphite flake inter-layer bonding force is very weak, in vertical slice direction
Coefficient is very high by (28 × 10-6K-1), the thermal expansion coefficient for being bound to cause highly oriented graphite material in the direction greatly increases, and causes
The swollen boat performance requirement of low-heat of plane cannot achieve where device.The lower intensity of graphite also limits it in electronic device simultaneously
The development in thermal management materials field.
Summary of the invention
In order to overcome the disadvantages of the above prior art, the purpose of the present invention is to provide a kind of enhancing of silicon carbide nanometer line is high
It is orientated graphite composite material and preparation method, this method is easy to operate, can effectively improve the equal of ceramic skeleton by this method
Even property promotes the comprehensive performance of graphite-based material.
In order to achieve the above object, the present invention is achieved by the following scheme:
The invention discloses a kind of silicon carbide nanometer lines to enhance highly oriented graphite composite material, and the composite material is with lamella stone
Ink is raw material, and the silicon carbide nanometer line occurred using fused salt reaction makes the reinforced phase using hot pressing sintering method as reinforced phase
It is evenly distributed between Sheet Graphite, forms the composite material of anisotropic structure；Wherein: by percentage to the quality, Sheet Graphite
20%~90% is accounted for, silicon carbide nanometer line accounts for 10%~80%.
Preferably, the silicon carbide nanometer line enhance highly oriented graphite composite material relative density be 90.25%~
98.59%；Apparent porosity is 1.68%~8.64%；Perpendicular to graphite flake layer direction intensity up to 32.58~89.26MPa；?
Under temperature 300K, the thermal conductivity along lamella direction is 36~54W/ perpendicular to lamella direction thermal conductivity up to 95~216W/ (mK)
(mK), thermal expansion coefficient is (5~8) × 10-6/K。
The invention discloses the preparation method that a kind of silicon carbide nanometer line enhances highly oriented graphite composite material, including it is following
Step:
1) press silicon powder: flake graphite=1:50~2:1 molar ratio takes silicon powder and flake graphite to be mixed to prepare raw material powder,
By sodium chloride: sodium fluoride=1:3~6:1 molar ratio takes sodium chloride and sodium fluoride to be mixed to prepare reaction medium；By raw material powder:
Reaction medium=1:(4~12) mass ratio, by raw material powder and reaction medium be sufficiently mixed uniformly, be made mixed-powder；
2) under vacuum or protective atmosphere, mixed-powder is raised to 600 with the heating rate of 5~15 DEG C/min from room temperature
DEG C, keep the temperature 30min；1000~1500 DEG C are raised to the heating rate of 5~10 DEG C/min again, 0.5~9h is kept the temperature, through hot water injection
Repeatedly, powder is obtained after drying；
3) powder obtained is fitted into graphite jig, first pre-molding；
4) graphite jig equipped with pre-molding sample is placed in discharge plasma sintering device, to pre-molding sample
Apply the axial compressive force for being not less than 30MPa, and in vacuum or under the conditions of be connected with protective atmosphere, using pulse current to pre-molding
Sample carries out at least 60s excitation activation, is then sintered by room temperature to 1600~2000 DEG C, is kept the temperature by increasing electric current
After cool down, being made, there is uniform carburized silicon nanowires to enhance highly oriented graphite-base composite material.
Preferably, in step 1), the particle size range of silicon powder used is 2~10 μm, and purity is greater than 99.0%.
Preferably, in step 1), the width of flake graphite used is 200~1000 μm, and width-thickness ratio is (10~20): 1, it is pure
Degree is greater than 99.0%.
Preferably, in step 1), mixing uses mechanical stirring, and mixing time is 20~40min.
Preferably, in step 2), hot water temperature is 80~100 DEG C, is rinsed no less than 50 times.
Preferably, the pressure of pre-molding is 30~90MPa, 1~10min of pressure maintaining in step 3).
Preferably, in two stages, the first stage is by room temperature with the heating rate liter of 300 DEG C/min for the step 4) sintering
For temperature to 1200 DEG C, second stage is warming up to final sintering temperature from 1200 DEG C of heating rates with 150 DEG C/min.
Preferably, soaking time described in step 4) is at least 3min.
Compared with prior art, the invention has the following advantages:
Silicon carbide nanometer line disclosed by the invention enhances the preparation method of highly oriented graphite composite material, is made with flake graphite
Template grows one layer of uniform silicon carbide nanometer line as reinforced phase on its surface, is evenly distributed between graphite flake layer, forms carbon
The anisotropic structure for the graphite flake layer that the enhancing of SiClx nano wire aligns；First using silicon powder and flake graphite as raw material in technique
By molten-salt growth method prepare silicon carbide nanometer line coat flake graphite powder, then after pre-molding in 1600~2000 DEG C into
Row discharge plasma is sintered, the axial compressive force applied in sintering process, makes the graphite flake layer orientation for coating silicon carbide nanometer line
Arrangement, the uniform three dimensional ceramic skeleton formed after sintering.The present invention is uniform in the silicon carbide of Graphite Coating using molten-salt growth method
Continuously, the interface cohesion of silicon carbide and graphite is good, applies certain axial compressive force in sintering process, and cladding silicon carbide can be made to receive
The uniform oriented alignment of graphite particle piece of rice noodles prepares each to different of silicon carbide nanometer line enhancing by discharge plasma sintering
Property graphite composite material.This method is easy to operate, is suitable for promoting, and discharge plasma sintering method is fast with heating rate, is sintered week
The advantages that phase is short, densification rate is high.
It can be made fine and close, high-strength, along lamella direction high heat conductance, vertical slice direction low-heat through the above method of the present invention
The anisotropic composite material of expansion, has an excellent comprehensive performance, thus by the heat transfer of electronic device, heat generating components,
Heat dissipation etc. is with a wide range of applications.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that the present invention uses discharge plasma sintering furnace.
Fig. 2 is the microstructure photo of silicon carbide cladding flake graphite in powder (embodiment 1) prepared by the present invention, wherein (a)
Low power microstructure photo；(b) high power microstructure photo；
Fig. 3 is the microstructure photo that silicon carbide nanometer line prepared by the present invention enhances highly oriented graphite (embodiment 1).
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that term " includes " in description and claims of this specification and " having " and they
Any deformation, it is intended that cover it is non-exclusive include, for example, containing the process, method of a series of steps or units, being
System, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include be not clearly listed or
For the intrinsic other step or units of these process, methods, product or equipment.
The invention will be described in further detail with reference to the accompanying drawing:
Silicon carbide nanometer line of the present invention enhances highly oriented graphite-base composite material and preparation process is to pass through plasma discharging
It is completed in sintering furnace.The powder of the tungsten carbide prepared cladding flake graphite is fitted into graphite jig, in advance in two side pressures
Graphite jig, is placed on the center of upper and lower graphite cushion block by the graphite paper that head and mould inner wall pad a layer thickness are 0.2mm,
Start pressure-loaded system to both ends graphite cushion block apply 30~60MPa axial compressive force, pass to mold make wherein sample by
To extruding.Furnace chamber is closed, entire furnace chamber is vacuumized by vacuum system, forms the vacuum chamber that air pressure is less than 5Pa.Sintering is true
It is carried out under empty or argon gas protective condition.When sintering, the excitation of 60s is carried out to sample first with pulse current by power-supply system
Activation, electric current are realized the raising of temperature by increase electric current, are sintered after exciting.Because activation stage generates zigzag
Pulse current promotes atom diffusion to produce in forming microcell discharge plasma on powder particles, so that generating instantaneous high-temperature between particle
Raw constriction, and micro- stomata of triangle grain boundaries is eliminated, it realizes quick densifying, subsequently powers on and calorify powder, utilize thermal diffusion
And electric boundary's diffusion effect completes sintering process.After insulating process, cooling system can allow the temperature of sintering furnace and sample
Quickly it is down to room temperature.The Fast Sintering of material can be realized using this process.
Embodiment 1
Weighing molar ratio is the silicon powder and flake graphite of 1:1 as raw material, and the sodium chloride and sodium fluoride of 4:1 is medium,
Middle raw material and mass of medium ratio are 1:7, and by raw material and medium, mechanical stirring 30min is uniformly mixed in the agate mortar.It will mixing
Powder be put into alumina crucible, alumina crucible is put into vacuum drying oven, is evacuated to 1 × 10-3Pa, with 10 DEG C/min's
Heating rate is raised to 600 DEG C, keeps the temperature 30min；Closing vacuum system, applying argon gas protective gas to tiny structure, then with 10 DEG C/min
Heating rate be raised to 1100 DEG C after, be raised to 1300 DEG C with the heating rate of 5 DEG C/min, 1h kept the temperature, through 80~100 DEG C of hot water
It rinses 30~50 times, silicon carbide nanometer line cladding sheet graphite composite powder is obtained after drying, which is that surface is carbonized silicon nanometer
Line cladding graphite powder, silicon carbide nanometer line be silicon powder and graphite reaction after generate.Powder obtained is taken, graphite jig is packed into
In, the upper push-down head and inner wall of mold pad one layer of graphite paper in advance, and progress is pre-stamped to be shaped to sample, then by graphite jig
It is put into discharge plasma sintering furnace shown in FIG. 1.It is vacuumized in furnace chamber, forms the vacuum chamber that intracavitary air pressure is less than 5Pa.Pass through
Loading system applies the axial compressive force of 50MPa to graphite jig.When sintering process is initial, sample is excited using pulse current
60s then increases electric current and is rapidly heated to 1200 DEG C, is then warming up to 1800 DEG C with the heating rate of 150 DEG C/min, heat preservation
5min then cools to room temperature with the furnace, and obtaining silicon carbide nanometer line enhances highly oriented graphite-base composite material.
Sheet stone is coated to silicon carbide nanometer line prepared by the embodiment using field emission scanning electron microscope (FESEM)
Ink powder body is characterized, and microstructure can refer to Fig. 2.Flake graphite surface has coated one layer of straightness height, dense uniform
Silicon carbide nanometer line.The formation of silicon carbide nanometer line improves sintering activity and promotes sample densification.Using Archimedes
The density that drainage measures reaches 3.05g/cm3, relative density reaches 96.5%, apparent porosity 2.6%.By electric discharge etc. from
Son sintering, under the effect of the pressure, the flake graphite in powder for coating silicon carbide nanometer line aligns, and silicon carbide is uniformly distributed in piece
Between layer graphite, formed three-dimensional network shape ceramic skeleton (Fig. 3).Bending strength test result shows the composite material perpendicular to stone
The intensity in ink sheet layer direction reaches 89.26MPa.Meanwhile the composite material thermally conductive be the results show that at temperature 300K, along piece
The thermal conductivity in layer direction reaches 131W/ (mK), is 54W/ (mK) perpendicular to lamella direction, has obvious anisotropy.
Embodiment 2
The present embodiment technique has change with embodiment 1, different only some technological parameters: mole of silicon powder and graphite powder
Than for 1:1, discharge plasma sintering temperature is 1600 DEG C.
Performance test same as Example 1 is carried out to the present embodiment sintered specimen, as a result as follows: density reaches 2.76g/
cm3, relative density reaches 90.25%, apparent porosity 8.64%.Microstructure is similar with Fig. 2, forms three-dimensional network shape ceramics
Skeleton is similar with Fig. 3；59.57MPa is reached perpendicular to the intensity in graphite flake layer direction.At temperature 300K, along lamella direction
Thermal conductivity reaches 95W/ (mK), is 39W/ (mK) perpendicular to lamella direction.
Embodiment 3
The present embodiment technique has change with embodiment 1, different only some technological parameters: mole of silicon powder and graphite powder
Than for 1:3, discharge plasma sintering temperature is 1850 DEG C.
Performance test same as Example 1 is carried out to the present embodiment sintered specimen, as a result as follows: density reaches 2.44g/
cm3, relative density reaches 94.57%, apparent porosity 2.69%.Microstructure is similar with Fig. 2, forms three-dimensional network shape ceramics
Skeleton is similar with Fig. 3；72.95MPa is reached perpendicular to the intensity in graphite flake layer direction.At temperature 300K, along lamella direction
Thermal conductivity reaches 169W/ (mK), is 42W/ (mK) perpendicular to lamella direction.
Embodiment 4
The present embodiment technique has change with embodiment 1, different only some technological parameters: mole of silicon powder and graphite powder
Than for 1:2, discharge plasma sintering temperature is 1900 DEG C.
Performance test same as Example 1 is carried out to the present embodiment sintered specimen, as a result as follows: density reaches 2.81g/
Cm3, relative density reach 98.59%, apparent porosity 1.02%.Microstructure is similar with Fig. 2, forms three-dimensional network shape ceramics
Skeleton is similar with Fig. 3；86.26MPa is reached perpendicular to the intensity in graphite flake layer direction.At temperature 300K, along lamella direction
Thermal conductivity reaches 195W/ (mK), is 52W/ (mK) perpendicular to lamella direction.
Embodiment 5
The present embodiment technique has change with embodiment 1, different only some technological parameters: mole of silicon powder and graphite powder
Than for 1:20, discharge plasma sintering temperature is 1900 DEG C.
Performance test same as Example 1 is carried out to the present embodiment sintered specimen, as a result as follows: density reaches 2.29g/
cm3, relative density reaches 97.39%, apparent porosity 1.68%.Microstructure is similar with Fig. 2, forms three-dimensional network shape ceramics
Skeleton is similar with Fig. 3；32.58MPa is reached perpendicular to the intensity in graphite flake layer direction.At temperature 300K, along lamella direction
Thermal conductivity reaches 216W/ (mK), is 36W/ (mK) perpendicular to lamella direction.
In conclusion due to silicon carbide have excellent mechanical performance, good corrosion-resistant, high temperature resistant, inoxidizability and
Heating conduction and low thermal expansion coefficient.Especially silicon carbide nanostructures (whisker, nanometer rods, nanotube etc.) have one
A little unique mechanical, electronics and optical property and excellent sintering activity.The present invention is selected silicon carbide nanometer line and graphite
Mutually uniformly it is compound, the advantage of silicon carbide ceramics and its nano wire can be introduced into graphite matrix, make up graphite intensity it is low, burn
The disadvantages of knot is difficult, high perpendicular to Sheet Graphite thermal expansion coefficient has graphite-base composite material in field of heat management wide
Application prospect.
Therefore, present invention selection makees template with flake graphite, grows one layer of uniform silicon carbide nanometer line on its surface and makees
It for reinforced phase, is evenly distributed between graphite flake layer, forms each to different of the graphite flake layer that silicon carbide nanometer line enhancing aligns
Property structure.Specifically, silicon carbide nanometer line cladding sheet graphite composite powder is firstly generated, is then prepared by discharge plasma sintering
Uniform carbon SiClx skeleton enhances highly oriented graphite-base composite material.Wherein it is simple to operation to prepare silicon carbide nanometer line for molten-salt growth method
Advantage, discharge plasma sintering are a kind of novel methods, have heating rate is fast, the sintering period is short, densification rate is high etc.
Advantage.The silicon carbide nanometer line enhancing graphite-base composite material that the present invention obtains can be widely applied to electronics, aerospace, national defence
In the thermal management materials in equal fields, have broad application prospects.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press
According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention
Protection scope within.
Claims (10)
1. a kind of silicon carbide nanometer line enhances highly oriented graphite composite material, which is characterized in that the composite material is with Sheet Graphite
For raw material, the silicon carbide nanometer line occurred using fused salt reaction keeps the reinforced phase equal as reinforced phase using hot pressing sintering method
It is even to be distributed between Sheet Graphite, form the composite material of anisotropic structure；Wherein:
By percentage to the quality, Sheet Graphite accounts for 20%~90%, and silicon carbide nanometer line accounts for 10%~80%.
2. silicon carbide nanometer line according to claim 1 enhances highly oriented graphite composite material, which is characterized in that the carbonization
The relative density that silicon nanowires enhances highly oriented graphite composite material is 90.25%~98.59%；Apparent porosity be 1.68%~
8.64%；Perpendicular to graphite flake layer direction intensity up to 32.58~89.26MPa；Heat at temperature 300K, along lamella direction
Conductance is 36~54W/ (mK) perpendicular to lamella direction thermal conductivity up to 95~216W/ (mK), and thermal expansion coefficient is (5~8)
×10-6/K。
3. the preparation method that a kind of silicon carbide nanometer line enhances highly oriented graphite composite material, which is characterized in that including following step
It is rapid:
1) press silicon powder: flake graphite=1:50~2:1 molar ratio takes silicon powder and flake graphite to be mixed to prepare raw material powder, by chlorine
Change sodium: sodium fluoride=1:3~6:1 molar ratio takes sodium chloride and sodium fluoride to be mixed to prepare reaction medium；By raw material powder: reaction
Medium=1:(4~12) mass ratio, by raw material powder and reaction medium be sufficiently mixed uniformly, be made mixed-powder；
2) under vacuum or protective atmosphere, mixed-powder is raised to 600 DEG C with the heating rate of 5~15 DEG C/min from room temperature,
Keep the temperature 30min；1000~1500 DEG C are raised to the heating rate of 5~10 DEG C/min again, keeps the temperature 0.5~9h, it is more through hot water injection
It is secondary, powder is obtained after drying；
3) powder obtained is fitted into graphite jig, first pre-molding；
4) graphite jig equipped with pre-molding sample is placed in discharge plasma sintering device, pre-molding sample is applied
Axial compressive force not less than 30MPa, and in vacuum or under the conditions of be connected with protective atmosphere, using pulse current to pre-molding sample
At least 60s excitation activation is carried out, is then sintered by room temperature to 1600~2000 DEG C by increasing electric current, it is cold after heat preservation
But, being made, there is uniform carburized silicon nanowires to enhance highly oriented graphite-base composite material.
4. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, in step 1), the particle size range of silicon powder used is 2~10 μm, and purity is greater than 99.0%.
5. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, in step 1), the width of flake graphite used is 200~1000 μm, and width-thickness ratio is (10~20): 1, purity is greater than
99.0%.
6. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, in step 1), mixing uses mechanical stirring, and mixing time is 20~40min.
7. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, in step 2), hot water temperature is 80~100 DEG C, is rinsed no less than 50 times.
8. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, the pressure of pre-molding is 30~90MPa, 1~10min of pressure maintaining in step 3).
9. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, in two stages, the first stage is warming up to 1200 by room temperature with the heating rate of 300 DEG C/min for the step 4) sintering
DEG C, second stage is warming up to final sintering temperature from 1200 DEG C of heating rates with 150 DEG C/min.
10. silicon carbide nanometer line according to claim 3 enhances the preparation method of highly oriented graphite composite material, feature
It is, soaking time described in step 4) is at least 3min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910198213.2A CN109942297A (en) | 2019-03-15 | 2019-03-15 | A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910198213.2A CN109942297A (en) | 2019-03-15 | 2019-03-15 | A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109942297A true CN109942297A (en) | 2019-06-28 |
Family
ID=67010075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910198213.2A Pending CN109942297A (en) | 2019-03-15 | 2019-03-15 | A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109942297A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114988905A (en) * | 2022-07-19 | 2022-09-02 | 中南大学 | Al2O3 filled Cf/PyC-SiCNWs composite material and preparation method thereof |
| CN116396089A (en) * | 2023-04-12 | 2023-07-07 | 西安交通大学 | Three-dimensional silicon carbide/molybdenum carbide ceramic skeleton reinforced carbon-based composite material and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7586251B2 (en) * | 2004-03-31 | 2009-09-08 | Samsung Sdi Co., Ltd. | Electron emission device with decreased electrode resistance and fabrication method and electron emission display |
| CN105236982A (en) * | 2015-09-14 | 2016-01-13 | 西安交通大学 | Aluminum nitride reinforced graphite-based composite material and preparation process thereof |
-
2019
- 2019-03-15 CN CN201910198213.2A patent/CN109942297A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7586251B2 (en) * | 2004-03-31 | 2009-09-08 | Samsung Sdi Co., Ltd. | Electron emission device with decreased electrode resistance and fabrication method and electron emission display |
| CN105236982A (en) * | 2015-09-14 | 2016-01-13 | 西安交通大学 | Aluminum nitride reinforced graphite-based composite material and preparation process thereof |
Non-Patent Citations (1)
| Title |
|---|
| 丁军: "熔盐介质中碳材料改性及微孔轻质材料制备的基础研究", 《中国博士学位论文全文数据库工程科技Ⅰ辑》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114988905A (en) * | 2022-07-19 | 2022-09-02 | 中南大学 | Al2O3 filled Cf/PyC-SiCNWs composite material and preparation method thereof |
| CN114988905B (en) * | 2022-07-19 | 2022-12-02 | 中南大学 | Al2O3 filled Cf/PyC-SiCNWs composite material and preparation method thereof |
| CN116396089A (en) * | 2023-04-12 | 2023-07-07 | 西安交通大学 | Three-dimensional silicon carbide/molybdenum carbide ceramic skeleton reinforced carbon-based composite material and preparation method and application thereof |
| CN116396089B (en) * | 2023-04-12 | 2023-12-29 | 西安交通大学 | Three-dimensional silicon carbide/molybdenum carbide ceramic skeleton reinforced carbon-based composite material and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pan et al. | Optimized thermal conductivity of diamond/Cu composite prepared with tungsten-copper-coated diamond particles by vacuum sintering technique | |
| CN107649688B (en) | A kind of the diamond heat-conducting composite material and preparation method and application of easy processing | |
| Amirthan et al. | Thermal conductivity studies on Si/SiC ceramic composites | |
| CN105236982B (en) | The enhanced graphite-base composite material of aluminium nitride and preparation technology | |
| CN109928756A (en) | A kind of SiC reinforcement C-base composte material and preparation method | |
| CN105503227B (en) | A kind of preparation method of stereo fabric enhancing silicon carbide diamond composite | |
| CN104894418A (en) | In-situ synthesized spinel whisker reinforced aluminum-based composite foam and preparation method thereof | |
| CN109928755A (en) | A kind of tungsten carbide enhancing C-base composte material and preparation method | |
| CN104628407A (en) | Preparation method of Al2O3 fiber-toughened MAX-phase ceramic matrix composite | |
| Wang et al. | Preparation and ablation properties of ZrB2–SiC protective laminae for carbon/carbon composites | |
| CN109777987A (en) | A kind of pressureless infiltration method prepares the process of diamond/aluminum composite material | |
| CN109987954B (en) | Tungsten carbide reinforced graphite-based composite material and preparation method thereof | |
| CN110241325A (en) | A kind of titanium fossil ink sheet reinforced aluminum matrix composites and its preparation method and application | |
| CN109942297A (en) | A kind of silicon carbide nanometer line enhances highly oriented graphite composite material and preparation method | |
| Zhu et al. | A gradient composite coating to protect SiC-coated C/C composites against oxidation at mid and high temperature for long-life service | |
| CN109824382A (en) | A kind of heat management SiC/ graphite film laminar composite and preparation method thereof | |
| Xiao et al. | Understanding on interlaminar nano-reinforcement induced mechanical performance improvement of carbon/carbon composites after silicon infiltration | |
| CN115677364A (en) | Multilayer zirconium carbide reinforced carbon-based composite material and preparation method and application thereof | |
| CN106631161B (en) | A method of composite coating resistant to high temperature oxidation is prepared on carbon-based material surface | |
| CN111636006B (en) | Aluminum-silicon alloy graphite composite heat conduction material and preparation and application thereof | |
| CN106435244B (en) | A kind of preparation method of aluminium-graphene metallic composite | |
| CN110453126A (en) | A kind of diamond-metal-based compound Heat Conduction Material and preparation method thereof | |
| CN109704777B (en) | Preparation method of graphene composite carbide ceramic material | |
| Lu et al. | Study of the hot-pressing sintering process of diamond/copper composites and their thermal conductivity | |
| CN107311685A (en) | The preparation method of electrophoresis and thermal evaporation techniques fabricated in situ refractory carbide nano wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190628 |
|
| RJ01 | Rejection of invention patent application after publication |