CN109921749B - Circuit for improving third-order intermodulation of millimeter wave GaN MMIC power amplifier - Google Patents
Circuit for improving third-order intermodulation of millimeter wave GaN MMIC power amplifier Download PDFInfo
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- CN109921749B CN109921749B CN201910236996.9A CN201910236996A CN109921749B CN 109921749 B CN109921749 B CN 109921749B CN 201910236996 A CN201910236996 A CN 201910236996A CN 109921749 B CN109921749 B CN 109921749B
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Abstract
The invention provides a circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier, which comprises: the device comprises a first amplification module and a second amplification module; the input end of the first amplification module is connected with the radio frequency input port and used for receiving a radio frequency input signal; the first amplification module performs first-stage amplification on the radio frequency input signal to obtain a first third-order intermodulation signal; the second amplification module is used for carrying out second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal; the first amplification module further comprises a phase adjustment unit, wherein the phase adjustment unit is used for adjusting the phase of the first third-order intermodulation signal and the phase of the second third-order intermodulation signal, so that the phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 degrees, the third-order signal of the first-stage amplification module and the third-order signal of the second-stage amplification module are not added but subtracted, and therefore the finally obtained third-order signal amplitude is reduced, and the third-order intermodulation is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor microwave integrated circuits, and particularly relates to a circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier.
Background
Linearity is a key technical indicator of MMIC (Monolithic Microwave Integrated Circuit) power amplifiers, and can be generally characterized by Third-order intermodulation (IMD 3). Linear power amplifiers are generally required to have high linearity while maintaining a certain power added efficiency. If the design is unreasonable, the additional efficiency of the power amplifier meets the index requirement, but the third-order intermodulation may not meet the index requirement, and similarly, the third-order intermodulation is guaranteed to meet the index requirement during the design, but the power additional efficiency may not meet the index requirement.
Aiming at the design requirements of a 26-28GHz band GaN MMIC power amplifier, the chip of the power amplifier needs to have IMD3 less than-35 dBc and power added efficiency more than 25% when the output power is 34dBm under the conditions that the saturated output power of the whole band range is 40dm and the output power is less than 34 dBm. In the traditional scheme, the IMD3 is improved by adopting a mode of changing two-stage grid bias point voltage by a power amplifier, and the scheme can basically realize third-order intermodulation and power added efficiency under the condition of certain output power in the whole frequency band range. However, the third-order intermodulation obtained by simulation is near-35 dBc, and considering the discreteness of the simulation result, in order to ensure that the designed power amplifier meets the index, the third-order intermodulation of the amplifier needs to be further improved under the condition of keeping the power addition efficiency unchanged, and aiming at the technical requirement, a feasible technical scheme is not provided in the prior art.
Disclosure of Invention
In view of this, embodiments of the present invention provide a circuit for improving the third-order intermodulation of a millimeter wave GaN MMIC power amplifier, so as to solve the problem that the third-order intermodulation of the GaN MMIC power amplifier cannot be further improved in the prior art while the power added efficiency is kept unchanged in the design process of the GaN MMIC power amplifier.
The embodiment of the invention provides a circuit for improving the third-order intermodulation of a millimeter wave GaN MMIC power amplifier, which comprises: the device comprises a first amplification module and a second amplification module;
the input end of the first amplification module is connected with the radio frequency input port and used for receiving a radio frequency input signal;
the first amplification module performs first-stage amplification on the radio frequency input signal to obtain a first third-order intermodulation signal;
the output end of the first amplification module is connected with the input end of the second amplification module, and the second amplification module is used for carrying out second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal;
the first amplification module further comprises a phase adjustment unit, and the phase adjustment unit is configured to adjust phases of the first third-order intermodulation signal and the second third-order intermodulation signal, so that a phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 °.
Optionally, the first amplifying module further includes:
the phase adjusting unit comprises a first High Electron Mobility Transistor (HEMT), a first positive voltage bias is input to a first end of the phase adjusting unit, a second end of the phase adjusting unit is connected with a drain electrode of the first amplifying unit, and the first positive voltage bias is used for powering up the drain electrode of the first amplifying unit.
Optionally, the phase adjusting unit includes:
the first capacitor, the microstrip annular circuit and the series microstrip;
the first end of the first capacitor is connected with the first end of the phase adjusting unit, and the second end of the first capacitor is grounded;
the first end of the microstrip annular circuit is connected with the first end of the phase adjusting unit, and the second end of the microstrip annular circuit is connected with the first end of the serial microstrip;
and the second end of the series microstrip is connected with the drain electrode of the first amplifying unit.
Optionally, the first capacitor is a decoupling capacitor.
Optionally, the microstrip loop circuit is composed of a first resistor, a second resistor, a third resistor and a fourth resistor, the first end of the second resistor, the first end of the third resistor and the first end of the fourth resistor after being connected in series are connected with the first end of the first resistor, the second end of the second resistor, the second end of the third resistor and the second end of the fourth resistor after being connected in series are connected with the second end of the first resistor, the first end of the first resistor is connected with the first end of the phase adjusting unit, and the second end of the first resistor is connected with the first end of the series microstrip.
Optionally, the series microstrip is a quarter-wave line.
Optionally, a second end of the phase adjustment unit is connected to a second end of a fifth resistor, and a first end of the fifth resistor is connected to the drain electrode of the first amplification unit.
Optionally, the second end of the fifth resistor is further connected to the first end of the second capacitor, and the second end of the second capacitor is connected to the second amplifying module.
Optionally, the second amplifying module includes a second amplifying unit and a third amplifying unit;
the second amplification unit and the third amplification unit are used for performing second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal, wherein the second amplification unit comprises a second HEMT, and the third amplification unit comprises a third HEMT.
Optionally, the output end of the second amplifying module is connected to the radio frequency output port.
The invention provides a circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier, which comprises: the device comprises a first amplification module and a second amplification module; the input end of the first amplification module is connected with the radio frequency input port and used for receiving a radio frequency input signal; the first amplification module performs first-stage amplification on the radio frequency input signal to obtain a first third-order intermodulation signal; the output end of the first amplification module is connected with the input end of the second amplification module, and the second amplification module is used for carrying out second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal; the first amplification module further comprises a phase adjustment unit, wherein the phase adjustment unit is used for adjusting the phase of the first third-order intermodulation signal and the phase of the second third-order intermodulation signal, so that the phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 degrees, the third-order signal of the first-stage amplification module and the third-order signal of the second-stage amplification module are not added but subtracted, the finally obtained third-order signal amplitude is reduced, and the IMD3 is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier according to an embodiment of the present invention;
fig. 2 is a circuit diagram of another circuit for improving third-order intermodulation of a GaN MMIC power amplifier according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Referring to fig. 1 and fig. 2 together, an embodiment of the present invention provides a circuit for improving third-order intermodulation of a millimeter-wave GaN MMIC power amplifier, including: a first amplification block 100 and a second amplification block 200;
the input end of the first amplification module 100 is connected to the radio frequency input port, and is configured to receive a radio frequency input signal;
the first amplification module 100 performs first-order amplification on the radio frequency input signal to obtain a first third-order intermodulation signal;
the output end of the first amplification module 100 is connected to the input end of the second amplification module 200, and the second amplification module 200 is configured to perform second-stage amplification on the signal output by the first amplification module 100 to obtain a second third-order intermodulation signal;
the first amplification module 100 further includes a phase adjustment unit 101, where the phase adjustment unit 101 is configured to adjust phases of the first third-order intermodulation signal and the second third-order intermodulation signal, so that a phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 °.
Namely, the phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 °, so that the amplitudes of the third-order intermodulation signal of the first amplification module and the third-order intermodulation signal of the second amplification module are not added but subtracted, the amplitude of the finally output third-order intermodulation signal is reduced, and IMD3 is improved.
As a specific embodiment, with reference to fig. 1 and fig. 2, the first amplification module 100 further includes:
the first amplifying unit 102, the first amplifying unit 102 includes a first high electron mobility transistor HEMT, a first positive voltage bias is input to a first end of the phase adjusting unit 101, a second end of the phase adjusting unit 101 is connected to a drain electrode of the first amplifying unit 102, and the first positive voltage bias is used for energizing the drain electrode of the first amplifying unit 102.
As a specific embodiment, with reference to fig. 2, the phase adjustment unit 101 includes:
the first capacitor C1, the microstrip annular circuit and the serial microstrip ML1;
a first end of the first capacitor C1 is connected to a first end of the phase adjusting unit 101, and a second end of the first capacitor C1 is grounded;
a first end of the microstrip loop circuit is connected with a first end of the phase adjusting unit 101, and a second end of the microstrip loop circuit is connected with a first end of the serial microstrip ML1;
a second end of the series microstrip ML1 is connected to the drain electrode of the first amplification unit 102.
Optionally, the first capacitor is a decoupling capacitor.
Optionally, the microstrip loop circuit is composed of a first resistor R1, a second resistor R2, a third resistor R3, and a fourth resistor R4, a first end of the second resistor R2, the third resistor R3, and the fourth resistor R4 after being connected in series is connected to a first end of the first resistor R1, a second end of the second resistor R2, the third resistor R3, and the fourth resistor R4 after being connected in series is connected to a second end of the first resistor R1, the first end of the first resistor R1 is connected to a first end of the phase adjusting unit 101, and the second end of the first resistor R1 is connected to a first end of the series microstrip ML 1.
Optionally, the series microstrip ML1 is a quarter-wave line.
Optionally, a second end of the phase adjusting unit 101 is connected to a second end of a fifth resistor R5, and a first end of the fifth resistor R5 is connected to the drain electrode of the first amplifying unit 102.
Optionally, a second end of the fifth resistor is further connected to a first end of a second capacitor C2, and a second end of the second capacitor is connected to the second amplifying module 200.
Optionally, the second amplifying module 200 includes a second amplifying unit 201 and the third amplifying unit 202;
the second amplifying unit 201 and the third amplifying unit 202 are configured to perform second-stage amplification on the signal output by the first amplifying module 100 to obtain a second third-order intermodulation signal, where the second amplifying unit 201 includes a second HEMT, and the third amplifying unit 202 includes a third HEMT.
Optionally, the output end of the second amplifying module 200 is connected to a radio frequency output port.
A microstrip annular circuit is connected in series between the capacitor C1 and the series microstrip ML 1. Because the microstrip annular circuit is matched with the capacitors C1 and ML1, the function of a traditional drain power supply bias circuit is achieved, and meanwhile, the phase adjustment effect can be achieved, the added microstrip annular circuit has no influence on the static working point of the HEMT in the first amplification unit, but compared with the drain power supply bias circuit of the HEMT in the second amplification module, a phase difference exists, so that the three-order intermodulation signals of the first amplification module and the second amplification module have a phase difference of just 180 degrees, the three-order intermodulation signals of the first amplification module and the third-order intermodulation signal amplitude of the second amplification module are not added but subtracted, the finally obtained three-order intermodulation signal amplitude is reduced, and the IMD3 is improved.
The invention provides a circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier, which comprises: a first amplification block 100 and a second amplification block 200; the input end of the first amplifying module 100 is connected to the radio frequency input port, and is configured to receive a radio frequency input signal; the first amplification module 100 performs first-stage amplification on the radio frequency input signal to obtain a first third-order intermodulation signal; the output end of the first amplification module 100 is connected to the input end of the second amplification module 200, and the second amplification module 200 is configured to perform second-stage amplification on the signal output by the first amplification module 100 to obtain a second third-order intermodulation signal; the first amplification module 100 further includes a phase adjustment unit 101, where the phase adjustment unit 101 is configured to adjust phases of the first third-order intermodulation signal and the second third-order intermodulation signal, so that a phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 °, and amplitudes of the third-order intermodulation signal of the first-stage amplification module and the third-order signal of the second-stage amplification module are not added but subtracted, so that an amplitude of the finally obtained third-order signal is reduced, and IMD3 is improved.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. A circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier is characterized by comprising: the device comprises a first amplification module and a second amplification module;
the input end of the first amplification module is connected with the radio frequency input port and is used for receiving radio frequency input signals;
the first amplification module performs first-stage amplification on the radio frequency input signal to obtain a first third-order intermodulation signal;
the output end of the first amplification module is connected with the input end of the second amplification module, and the second amplification module is used for carrying out second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal;
the first amplification module further comprises a phase adjustment unit, and the phase adjustment unit is used for adjusting the phases of the first third-order intermodulation signal and the second third-order intermodulation signal, so that the phase difference between the first third-order intermodulation signal and the second third-order intermodulation signal is 180 degrees;
the first amplification module further comprises:
the first amplifying unit comprises a first High Electron Mobility Transistor (HEMT), a first positive voltage bias is input to a first end of the phase adjusting unit, a second end of the phase adjusting unit is connected with a drain electrode of the first amplifying unit, and the first positive voltage bias is used for electrifying the drain electrode of the first amplifying unit;
the phase adjustment unit includes:
the first capacitor, the microstrip annular circuit and the series microstrip;
the first end of the first capacitor is connected with the first end of the phase adjusting unit, and the second end of the first capacitor is grounded;
the first end of the microstrip annular circuit is connected with the first end of the phase adjusting unit, and the second end of the microstrip annular circuit is connected with the first end of the serial microstrip;
and the second end of the series microstrip is connected with the drain electrode of the first amplifying unit.
2. The circuit of claim 1, wherein the first capacitor is a decoupling capacitor.
3. The circuit of claim 1, wherein the microstrip loop circuit comprises a first resistor, a second resistor, a third resistor, and a fourth resistor, a first end of the second resistor, the third resistor, and the fourth resistor connected in series is connected to a first end of the first resistor, a second end of the second resistor, the third resistor, and the fourth resistor connected in series is connected to a second end of the first resistor, the first end of the first resistor is connected to the first end of the phase adjustment unit, and the second end of the first resistor is connected to the first end of the microstrip connected in series.
4. The circuit of claim 1, wherein the series microstrip is a quarter-wave line.
5. The circuit of claim 1, wherein a second terminal of the phase adjusting unit is connected to a second terminal of a fifth resistor, and a first terminal of the fifth resistor is connected to a drain electrode of the first amplifying unit.
6. The circuit according to claim 5, wherein a second terminal of the fifth resistor is further connected to a first terminal of a second capacitor, and a second terminal of the second capacitor is connected to the second amplifying module.
7. The circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier of claim 1, wherein the second amplification module comprises a second amplification unit and a third amplification unit;
the second amplification unit and the third amplification unit are used for performing second-stage amplification on the signal output by the first amplification module to obtain a second third-order intermodulation signal, wherein the second amplification unit comprises a second HEMT, and the third amplification unit comprises a third HEMT.
8. The circuit for improving third-order intermodulation of a millimeter wave GaN MMIC power amplifier according to claim 1, wherein the output terminal of the second amplifying module is connected to a radio frequency output port.
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