CN109920861B - Indium arsenic nitrogen bismuth, laser and detector using indium arsenic nitrogen bismuth and preparation method - Google Patents
Indium arsenic nitrogen bismuth, laser and detector using indium arsenic nitrogen bismuth and preparation method Download PDFInfo
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- QOEFLDRIGYGYBS-UHFFFAOYSA-N [Bi].[N].[As].[In] Chemical compound [Bi].[N].[As].[In] QOEFLDRIGYGYBS-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 135
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 133
- 239000000463 material Substances 0.000 claims abstract description 95
- 125000004429 atom Chemical group 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 23
- 238000002161 passivation Methods 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 16
- 229910052797 bismuth Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000004568 cement Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 239000002096 quantum dot Substances 0.000 claims description 5
- -1 quantum well Substances 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000001451 molecular beam epitaxy Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application discloses an indium arsenic nitrogen bismuth semiconductor material, a laser and a detector using the material and a preparation method, and relates to the field of semiconductor photoelectric material preparation. The material comprises: the substrate layer, the buffer layer and the indium arsenic nitrogen bismuth semiconductor material. By means of co-doping, Bi atoms and N atoms with certain concentration are doped in an InAs semiconductor, the forbidden bandwidth of the InAs material can be effectively adjusted, coverage of near infrared to mid-infrared wave bands is achieved, and the InAs semiconductor is applied to photoelectronic devices. The doping of Bi atoms can make the material easier to grow and more stable, and the introduction of N atoms can improve the solubility of Bi. N atoms are doped into the InAs semiconductor, and the Bi atoms can effectively adjust the energy band structure of the compound. The method can adopt various methods such as conventional molecular beam epitaxy, metal organic chemical vapor deposition and the like for growth, and is simple in structure and operation process and easy to control.
Description
Technical Field
The application relates to the field of semiconductor photoelectric material preparation, in particular to an indium arsenic nitrogen bismuth semiconductor material, a laser and a detector using the material and a preparation method.
Background
Research shows that indium arsenide (InAs) in III-V of a semiconductor family is a semiconductor material with excellent electrical properties, and the InAs material has the advantages of high carrier concentration, high electron mobility and the like. The band gap of the InAs material can be reduced by adding a small amount of Bi atoms into the InAs, and the reduction rate of the band gap is about 40-50 meV. InAsBi at room temperature0.089The band gap value is reduced by 0.354eV compared with the InAs material. Meanwhile, InAs material as a direct band gap semiconductor material can be used for constructing I-type and II-type quantum wells, so that InAs1-x-yNxBiyThe material can be applied to mid-infrared optoelectronic devices, detectors, chemical sensors, lasers and the like as an alternative material. However, some conditions are required before successful application to these devices. Such as a better growth quality, strong optical coupling, and lower non-radiative carrier loss. In terms of material growth, the doping concentration of Bi atoms in InAs materials has been increased to 6.4%. Typically, the absorption intensity of the semiconductor material is attenuated at wavelengths corresponding to the band gap, but still has an absorption in the long wavelength range of more than 1000/cm.
The InAsN material is a material which is researched a lot in a III-V-N material system, and compared with other III-V-N materials, the InAsN material has the advantages of large bending coefficient and the like. The relatively large difference between the atomic radius of N and the atomic radius of As results in poor solubility of N atoms in InAsN. Affecting the design of device materials and device performance. By continuously doping Bi atoms in the InAsN material, the solubility of N can be improved, and the spin-orbit splitting energy of the material can be increased due to the Bi atoms. When the spin-orbit splitting energy is larger than the band gap value, the Auger recombination effect in the material can be inhibited, and the noise of the device is reduced.
It is very meaningful to dope Bi atoms and N atoms in InAs simultaneously, the Bi atoms and the N atoms can respectively adjust the positions of a valence band and a conduction band, and simultaneously, the ideal lattice constant can be obtained by adjusting the concentrations of the Bi atoms and the N atoms according to the requirements of device materials, which brings great convenience to device design and energy band engineering.
Disclosure of Invention
It is an object of the present application to overcome the above problems or to at least partially solve or mitigate the above problems.
According to one aspect of the present application, there is provided an indium arsenic bismuth nitride semiconductor material comprising:
the substrate layer is an InAs substrate layer or an auxiliary substrate layer;
the InAs buffer layer is epitaxially grown on the substrate layer; and
indium-arsenic-nitrogen-bismuth semiconductor material on the buffer layerEpitaxially growing indium-arsenic-nitrogen-bismuth film and heterojunction material with general structural formula of InAs1-x-yNxBiyIt is obtained by doping N atoms and Bi atoms into InAs materials.
Optionally, the effective tuning range of the Bi atom is 0< y ≦ 5%.
Optionally, the InAs1-x-yNxBiyThe forbidden band width of the material is regulated and controlled by controlling the concentration of the doped N atoms and Bi atoms, so that the wavelength range of the material can cover near infrared to middle infrared.
Optionally, said InAs1-x-yNxBiyThe material is in the form of a thin film, quantum well, quantum dot or superlattice as part of the optoelectronic device material.
According to another aspect of the present application, there is provided a laser comprising said InAs1-x-yNxBiyA near-infrared band laser or a mid-infrared band laser prepared from the material.
The laser is a mid-infrared laser, and comprises the following components in sequence from bottom to top: InAs substrate layer, N-type InAs buffer layer, InAlAs lower limiting layer, InGaAlAs lower waveguide layer, InAs1-x-yNxBiyA quantum well active region, an InGaAlAs upper waveguide layer, an InAlAs upper limiting layer and a P-type InGaAs doped layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer,
an N electrode is deposited on the N-type InAs buffer layer, and a P electrode is deposited on the P-type InGaAs doping layer.
According to another aspect of the present application, there is provided a method of manufacturing the laser, performed as follows,
step 1, growing an N-type InAs buffer layer on an InAs substrate;
step 2, growing an InAlAs lower limiting layer on the N-type InAs buffer layer;
step 3, growing an InGaAlAs lower waveguide layer on the InAlAs lower limiting layer;
step 4, growing InAs on the InGaAlAs lower waveguide layer1-x-yNxBiyA quantum well active region;
step 5, in the InAs1-x-yNxBiyGrowing an InGaAlAs upper waveguide layer on the quantum well active region;
step 6, growing an InAlAs upper limiting layer on the InGaAlAs upper waveguide layer;
step 7, growing a P-type InGaAs doping layer on the InAlAs upper limiting layer;
step 8, polishing photoresist on the P-type InGaAs doping layer, performing photoetching protection, and corroding the P-type InGaAs doping layer;
step 9, etching off the InAs1-x-yNxBiyA quantum well active region;
step 10, removing the optical cement;
step 11, depositing a layer of passivation layer material on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer;
step 12, photoetching an N electrode region on the N-type InAs buffer layer, and photoetching a P electrode region on the P-type InGaAs doping layer;
step 13, removing the passivation layers of the N electrode region and the P electrode region;
step 14, depositing electrode metal to obtain the InAs1-x-yNxBiyA mid-infrared laser.
According to another aspect of the present application, there is provided a detector comprising said InAs1-x-yNxBiyA near-infrared band detector or a mid-infrared band detector prepared from the material.
The detector is a mid-infrared detector and comprises the following components in sequence from bottom to top: InAs substrate, N-type InAs contact layer, N-type InAsNBi hole blocking layer, and P-type InAs1-x-yNxBiyAbsorption layer, P-type InAsNBi electronsA barrier layer and a P-type InAs contact layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs contact layer, the N-type InAsNBi hole blocking layer, the P-type InAsNBi absorption layer, the P-type InAsNBi electron blocking layer and the P-type InAs contact layer,
and an N electrode is etched on the N-type InAs contact layer, and a P electrode is etched on the P-type InAs contact layer.
According to another aspect of the present application, there is provided a method of manufacturing the detector, performed according to the steps of,
step 1, growing an N-type InAs contact layer on an InAs substrate;
step 2, growing an N-type InAsNBi hole blocking layer on the N-type InAs contact layer;
step 3, generating weak P-type InAs on the N-type InAsNBi hole blocking layer1-x-yNxBiyAn absorbing layer;
step 4, in the weak P type InAs1-x-yNxBiyGrowing a P-type InAsNBi electron blocking layer on the absorption layer;
step 5, growing a P-type InAs contact layer on the P-type InAsNBi electron barrier layer;
step 6, polishing photoresist on the P type InAs contact layer, carrying out photoetching protection, and corroding the P type InAs contact layer;
step 7, further etching off P-type InAs based on step 61-x-yNxBiyAn absorbing layer;
step 8, removing the optical cement;
step 9, the N-type InAs contact layer, the InAsNBi hole blocking layer and the InAs1-x-yNxBiyDepositing a layer of passivation layer material on the outer surfaces of the absorption layer, the InAsNBi electronic barrier layer and the P-type InAs contact layer;
step 10, photoetching an N electrode area on the N-type InAs contact layer, and photoetching a P electrode area on the P-type InAs contact layer;
step 11, removing the passivation layers of the N electrode area and the P electrode area;
and step 12, depositing electrode metal to obtain the InAsNBi mid-infrared detector.
According to the indium-arsenic-nitrogen-bismuth material, N atoms and Bi atoms are doped into an InAs material to form InAs1-x-yNxBiyBy adjusting atoms of N atoms and Bi atoms, the forbidden bandwidth of the InAs1-x-yNxBiy material can be effectively adjusted and controlled in the middle infrared band. InAs1-x-yNxBiy material can be used as a part of quantum wells or quantum dots, and the light emitting characteristic can be changed by adjusting the height of a potential barrier.
In addition, this application adopts the codoping of indium atom and bismuth atom can make the material grow more easily and more stable.
The indium arsenic nitrogen bismuth material can be grown by adopting various methods such as conventional molecular beam epitaxy, metal organic chemical vapor deposition and the like, and is simple in structure and operation process and easy to control.
The above and other objects, advantages and features of the present application will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
FIG. 1 is zincblende structure InAs of the present application1-x-yNxBiyUnder the condition that the material keeps lattice matching with InAs, the change relation graph of the band gap and spin orbit splitting energy of the material and the Bi concentration is shown;
FIG. 2 is InAs of the present application1-x-yNxBiyThe material energy band offset is plotted along with the change of N atoms and Bi atoms;
FIG. 3 is a schematic representation of InAs-containing media provided in accordance with an embodiment of the present application1-x-yNxBiyThe structure schematic diagram of the mid-infrared laser;
FIG. 4 is a schematic representation of InAs-containing media provided in accordance with an embodiment of the present application1-x-yNxBiyThe structure of the mid-infrared detector is schematic.
Detailed Description
The application provides an indium arsenic nitrogen bismuth semiconductor material, which comprises: the substrate layer, the buffer layer and the indium arsenic nitrogen bismuth semiconductor material. The substrate layer is an InAs substrate layer or an auxiliary substrate layer. And the InAs buffer layer is epitaxially grown on the substrate layer by the buffer layer. The indium-arsenic-nitrogen-bismuth semiconductor material is formed by epitaxially growing an indium-arsenic-nitrogen-bismuth film and a heterojunction material on the buffer layer, and has a structural general formula of InAs1-x-yNxBiyIt is obtained by doping N atoms and Bi atoms into InAs materials.
The application discloses indium arsenic nitrogen bismuth material, through the co-doping mode, mix Bi atom and N atom of certain concentration in the InAs semiconductor, can effectively adjust the forbidden bandwidth of InAs material, realize the cover from near-infrared to mid-infrared wave band, be applied to optoelectronic device. Preferably, the effective regulation range of the Bi atom is 0<y is less than or equal to 5 percent. The doping of Bi atoms can make the material easier to grow and more stable, and the introduction of N atoms can improve the solubility of Bi. N atoms are doped into the InAs semiconductor, and the Bi atoms can effectively adjust the energy band structure of the compound. Further, said InAs1-x-yNxBiyThe material is in the form of a thin film, quantum well, quantum dot or superlattice as part of the optoelectronic device material.
In addition, the indium arsenic nitrogen bismuth material can be grown by adopting various methods such as conventional molecular beam epitaxy, metal organic chemical vapor deposition and the like, and is simple in structure and operation process and easy to control.
Theoretical calculation shows that Bi atoms and N atoms are doped into InAs simultaneously, and the doping of Bi increases the lattice constant of the material because the atomic radius of Bi is larger than that of As. And the atomic radius of N is smaller than As, so the lattice constant of the material is reduced. If quaternary compound InAs with the same lattice constant as InAs is to be obtained1-x-yNxBiyThe ratio of doped Bi and N is 0.56. The doped Bi atoms form a resonance energy level around the top of an InAs valence band, and the resonance energy level and valence of BiThe band energy levels produce coupling, resulting in an upward shift and splitting of the valence band, resulting in a reduction of the band gap. The doping of N atoms is similar to that of Bi atoms, and the N atoms can form resonant impurity energy levels at an InAs conduction band, so that the conduction band top of the material is downwards moved, and the band gap is reduced. FIG. 1 is zincblende structure InAs of the present application1-x-yNxBiyThe change of the band gap and spin-orbit splitting energy of the material and the Bi concentration is plotted under the condition that the material is kept to be matched with InAs in a lattice mode. Wherein, FIG. 1 calculates InAsN0.56xBixThe band gap value and spin-orbit splitting energy vary with x. According to the calculation results, the band gap value gradually decreases with the increase of the concentrations of N and Bi, the decreasing rate is about 55.4 meV% Bi, the free-orbit splitting energy gradually increases, and the increasing rate is about 14 meV% Bi. When x is>At 0.36%, the free-path splitting energy of the material may be greater than the band gap value, which will help suppress the auger recombination effect of the material.
FIG. 2 is InAs of the present application1-x-yNxBiyThe energy band offset of the material is plotted as a function of N atoms and Bi atoms. FIG. 2 calculated is InAs1-x-yNxBiyThe energy band offset of the material varies with the N atom and the Bi atom. According to the calculation result, the band offset of the valence band inversion can be effectively changed by adjusting the component concentrations of Bi and N, wherein the band offset of the valence band is more obvious relative to the band offset of the conduction band due to the strong coupling effect of the conduction band and the N impurity energy level. InAsN0.0015Bi0.025Valence band offset (Δ E)C94.9meV), heavy hole band offset (Delta E)HH53.5meV), please note hole band offset (Δ E)LH＝meV)。
In summary, the present application provides an InAs-N-Bi material, in which N atoms and Bi atoms are doped into an InAs material to form InAs1-x-yNxBiyBy adjusting atoms of N atoms and Bi atoms, InAs can be effectively regulated and controlled in mid-infrared wave band1-x-yNxBiyThe forbidden band width of the material. InAs1-x-yNxBiyThe material may be part of a quantum well or quantum dot, and the light emission characteristics may be altered by adjusting the barrier height.
The application also provides a laser containing the InAs1-x-yNxBiyA near-infrared band laser or a mid-infrared band laser prepared from the material.
The first embodiment is as follows: InAsNBi mid-infrared laser
FIG. 3 is a schematic representation of InAs-containing media provided in accordance with an embodiment of the present application1-x-yNxBiyAnd the structure of the mid-infrared laser is schematic.
In this embodiment, an InAs buffer layer is epitaxially grown on an InAs substrate (substrate) or an auxiliary substrate (template) by using an epitaxial growth tool of Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapor Deposition (MOCVD);
epitaxially growing InAs on the InAs buffer layer1-x-yNxBiyThin films and heterojunction materials.
Controlling the InAs by controlling the concentration of the doped In atoms and Bi atoms1-x-yNxBiyThe material has forbidden band width and wavelength range capable of covering middle infrared.
The laser is a mid-infrared laser, and comprises the following components in sequence from bottom to top: InAs substrate layer, N-type InAs buffer layer, InAlAs lower limiting layer, InGaAlAs lower waveguide layer, InAs1-x-yNxBiyA quantum well active region, an InGaAlAs upper waveguide layer, an InAlAs upper limiting layer and a P-type InGaAs doped layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer,
an N electrode is deposited on the N-type InAs buffer layer, and a P electrode is deposited on the P-type InGaAs doping layer.
More specifically, as shown in FIG. 3, the InAs of the zincblende structure1-x-yNxBiyThe material has a forbidden band width of 0.22eV at 4% N atoms and 9.7% Bi atoms, and has a corresponding wavelength of 5.64 μm, and is located in the mid-infrared band. The laser prepared from the material has the following structure:
in the step 1, the method comprises the following steps of,growing a 500nm N-type InAs buffer layer on an InAs substrate, wherein the doping concentration is (3-5) x 1018cm-3；
Step 2, growing a 1000nm InAlAs lower limiting layer on the 500nm N-type InAs layer, wherein the Al concentration is 5%;
step 3, growing a 1000nm InGaAlAs lower waveguide layer on the 1000nm InAlAs lower limiting layer, wherein the concentration of Ga and Al is 5%;
step 4, growing 30nm InAs on the InGaAlAs lower waveguide layer of 1000nm1-x-yNxBiyA quantum well active region, wherein N atoms are 4%, and Bi atoms are 9.7%;
step 5, growing an InGaAlAs upper waveguide layer of 1000nm on an InAsNBi quantum well active region of 30nm, wherein the concentration of Ga and Al is 5%;
step 6, growing an InAlAs upper limiting layer of 1000nm on the InGaAlAs upper waveguide layer of 1000nm, wherein Al atoms are 5%;
step 7, growing a 200nm P-type InGaAs doped layer on the 1000nm InAlAs upper limit layer, wherein the concentration of Ga is 5%;
step 8, polishing photoresist on the 200nm P-type InGaAs doping layer, performing photoetching protection, and corroding the P-type InGaAs doping layer;
step 9, etching off an InAsNBi active region;
step 10, removing the optical cement;
step 1,1, depositing a layer of passivation layer material on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer;
step 12, photoetching an N electrode region on the N-type InAs buffer layer, and photoetching a P electrode region on the P-type InGaAs doping layer;
step 13, removing the passivation layers of the N electrode area and the P electrode area;
and step 14, depositing electrode metal to obtain the InAsNBi mid-infrared laser shown in the figure 3.
The application also provides a detector containing the InAs1-x-yNxBiyNear infrared band prepared from materialA detector or mid-infrared band detector.
Example two: n-b-i-b-p type InAsNBi intermediate infrared detector
The detector is a mid-infrared detector and comprises the following components in sequence from bottom to top: InAs substrate, N-type InAs contact layer, N-type InAsNBi hole blocking layer, and P-type InAs1-x-yNxBiyAn absorption layer, a P-type InAsNBi electron blocking layer and a P-type InAs contact layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs contact layer, the N-type InAsNBi hole blocking layer, the P-type InAsNBi absorption layer, the P-type InAsNBi electron blocking layer and the P-type InAs contact layer,
and an N electrode is etched on the N-type InAs contact layer, and a P electrode is etched on the P-type InAs contact layer.
As shown in FIG. 4, the InAs of the zincblende structure1-x-yNxBiyThe material has a forbidden band width of 0.22eV at 4% N atoms and 9.7% Bi atoms, and has a corresponding wavelength of 5.64 μm, and is located in the mid-infrared band. The specific structure of the mid-infrared detector prepared by the material is described as follows:
step 1, growing a 500nm N-type InAs contact layer on an InAs substrate, wherein the doping concentration is (3-5) multiplied by 1018cm-3；
Step 2, growing an N-type InAsNBi hole blocking layer on the N-type InAs contact layer, wherein the doping concentration is 5 multiplied by 1016cm-3；
Step 3, growing a 5000nm weak P-type InAsNBi absorption layer on the N-type InAsNBi hole blocking layer, wherein the doping concentration is (1-5) multiplied by 1017cm-3；
Step 4, growing a P-type InAsNBi electron blocking layer on the weak P-type InAsNBi absorption layer, wherein the doping concentration is 5 multiplied by 1016cm-3；
Step 5, growing a 200nm P-type InAs contact layer on the 5000nm P-type InAsNBi electron barrier layer, wherein the doping concentration is-1 multiplied by 1019cm-3；
Step 6, polishing photoresist on the P type InAs contact layer, carrying out photoetching protection, and corroding the P type InAs contact layer;
step 7, further etching off the P-type InAsNBi absorption layer on the basis of the step 6;
step 8, removing the optical cement;
step 9, the N-type InAs contact layer, the InAsNBi hole blocking layer and the InAs1-x-yNxBiyDepositing a layer of passivation layer material on the outer surfaces of the absorption layer, the InAsNBi electronic barrier layer and the P-type InAs contact layer;
step 10, photoetching an N electrode area on the N-type InAs contact layer, and photoetching a P electrode area on the P-type InAs contact layer;
step 11, removing the passivation layers of the N electrode area and the P electrode area;
and step 12, depositing electrode metal to obtain the InAsNBi intermediate infrared detector shown in the figure 4.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present application, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. An indium arsenic nitride bismuth semiconductor material, comprising:
the substrate layer is an InAs substrate layer or an auxiliary substrate layer;
the InAs buffer layer is epitaxially grown on the substrate layer; and
the indium-arsenic-nitrogen-bismuth film is epitaxially grown on the buffer layer and has the structural general formula of InAs1-x-yNxBiyWherein, 0<y is less than or equal to 5 percent and is obtained by doping N atoms and Bi atoms into an InAs material;
the InAs1-x-yNxBiyThe forbidden band width of the material is regulated and controlled by controlling the concentration of the doped N atoms and Bi atoms, so that the corresponding wavelength range can cover near infrared to middle infrared.
2. The indium arsenide nitride bismuth semiconductor material as claimed in claim 1 wherein said InAs1-x-yNxBiyThe material is in the form of a thin film, quantum well, quantum dot or superlattice as part of the optoelectronic device material.
3. A laser comprising a near-infrared band laser or a mid-infrared band laser produced from the indium arsenic bismuth nitride semiconductor material according to claim 1 or 2.
4. The laser of claim 3, wherein the laser is a mid-infrared laser, and comprises, in order from bottom to top: InAs substrate layer, N-type InAs buffer layer, InAlAs lower limiting layer, InGaAlAs lower waveguide layer, InAs1-x-yNxBiyA quantum well active region, an InGaAlAs upper waveguide layer, an InAlAs upper limiting layer and a P-type InGaAs doped layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer,
an N electrode is deposited on the N-type InAs buffer layer, and a P electrode is deposited on the P-type InGaAs doping layer.
5. A method of making the laser of claim 4, wherein: the method is carried out according to the following steps,
step 1, growing an N-type InAs buffer layer on an InAs substrate;
step 2, growing an InAlAs lower limiting layer on the N-type InAs buffer layer;
step 3, growing an InGaAlAs lower waveguide layer on the InAlAs lower limiting layer;
step 4, growing InAs on the InGaAlAs lower waveguide layer1-x-yNxBiyA quantum well active region;
step 5, in the InAs1-x-yNxBiyGrowing an InGaAlAs upper waveguide layer on the quantum well active region;
step 6, growing an InAlAs upper limiting layer on the InGaAlAs upper waveguide layer;
step 7, growing a P-type InGaAs doping layer on the InAlAs upper limiting layer;
step 8, polishing photoresist on the P-type InGaAs doping layer, performing photoetching protection, and corroding the P-type InGaAs doping layer;
step 9, etching off the InAs1-x-yNxBiyA quantum well active region;
step 10, removing the optical cement;
step 11, depositing a layer of passivation layer material on the outer surfaces of the N-type InAs buffer layer, the InAlAs lower limiting layer, the InGaAlAs lower waveguide layer, the InGaAlAs upper waveguide layer, the InAlAs upper limiting layer and the P-type InGaAs doping layer;
step 12, photoetching an N electrode region on the N-type InAs buffer layer, and photoetching a P electrode region on the P-type InGaAs doping layer;
step 13, removing the passivation layers of the N electrode region and the P electrode region;
step 14, depositing electrode metal to obtain the InAs1-x-yNxBiyA mid-infrared laser.
6. A detector, characterized by comprising a near-infrared band detector or a mid-infrared band detector made of the indium arsenic nitrogen bismuth semiconductor material as claimed in claim 1 or 2.
7. The detector of claim 6, wherein the detector is a mid-infrared detector, and the detector is packaged in the order from bottom to topComprises the following steps: InAs substrate, N-type InAs contact layer, N-type InAsNBi hole blocking layer, and P-type InAs1-x-yNxBiyAn absorption layer, a P-type InAsNBi electron blocking layer and a P-type InAs contact layer,
wherein passivation layers are deposited on the outer surfaces of the N-type InAs contact layer, the N-type InAsNBi hole blocking layer, the P-type InAsNBi absorption layer, the P-type InAsNBi electron blocking layer and the P-type InAs contact layer,
and an N electrode is etched on the N-type InAs contact layer, and a P electrode is etched on the P-type InAs contact layer.
8. A method of making the detector of claim 7, wherein: the method is carried out according to the following steps,
step 1, growing an N-type InAs contact layer on an InAs substrate;
step 2, growing an N-type InAsNBi hole blocking layer on the N-type InAs contact layer;
step 3, generating weak P-type InAs on the N-type InAsNBi hole blocking layer1-x-yNxBiyAn absorbing layer;
step 4, in the weak P type InAs1-x-yNxBiyGrowing a P-type InAsNBi electron blocking layer on the absorption layer;
step 5, growing a P-type InAs contact layer on the P-type InAsNBi electron barrier layer;
step 6, polishing photoresist on the P type InAs contact layer, carrying out photoetching protection, and corroding the P type InAs contact layer;
step 7, further etching off P-type InAs based on step 61-x-yNxBiyAn absorbing layer;
step 8, removing the optical cement;
step 9, the N-type InAs contact layer, the InAsNBi hole blocking layer and the InAs1-x-yNxBiyDepositing a layer of passivation layer material on the outer surfaces of the absorption layer, the InAsNBi electronic barrier layer and the P-type InAs contact layer;
step 10, photoetching an N electrode area on the N-type InAs contact layer, and photoetching a P electrode area on the P-type InAs contact layer;
step 11, removing the passivation layers of the N electrode area and the P electrode area;
and step 12, depositing electrode metal to obtain the InAsNBi mid-infrared detector.
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Effective date of registration: 20240401 Address after: No. 28 Yunshan Middle Road, Sanqi Town, Yuyao City, Ningbo City, Zhejiang Province, 315403 (self declared) Patentee after: Ningbo Chaojing Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: 315403 Yuyao City Economic Development Zone, Ningbo City, Zhejiang Province Patentee before: NUODIKE (YUYAO) PHOTOELECTRIC INDUSTRY RESEARCH INSTITUTE Co.,Ltd. Country or region before: China |