CN109913943A - A kind of manufacturing method of SiC substrate - Google Patents
A kind of manufacturing method of SiC substrate Download PDFInfo
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- CN109913943A CN109913943A CN201910165370.3A CN201910165370A CN109913943A CN 109913943 A CN109913943 A CN 109913943A CN 201910165370 A CN201910165370 A CN 201910165370A CN 109913943 A CN109913943 A CN 109913943A
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Abstract
The invention discloses a kind of manufacturing methods of SiC substrate, S1, prepare SiC powder, as raw material, S2, the SiC powder raw material in S1 is placed in crucible, the seed crystal being made of SiC single crystal is installed in the lid of crucible, by recrystallizing raw material distillation, grow SiC single crystal on seed crystal, then the bulk-shaped monocrystal of generally cylindrical SiC is obtained, S3, SiC bulk-shaped monocrystal to be cut is installed on the workbench, is related to SiC substrate manufacture technology field.The manufacturing method of the SiC substrate, it is cut using diamond cutting secant, and is whitewashed in cutting, the SiC single crystal of major diameter can be cut, the SiC substrate surfacing cut out, the bulk-shaped monocrystal that muti-piece SiC can be cut every time, improves the production quality of SiC substrate, when making the bulk-shaped monocrystal of SiC, silicon carbide powder sublimes speed is fast, to which SiC single crystal speed of growth on seed crystal is fast, the producing efficiency of single-crystal silicon carbide is improved, production cost is reduced.
Description
Technical field
The present invention relates to SiC substrate manufacture technology field, specially a kind of manufacturing method of SiC substrate.
Background technique
Silicon carbide also known as, moissanite, corundum or fire sand, chemical skeleton symbol: SiC is with quartz sand, petroleum coke or coal
Burnt, sawdust is raw material by a kind of refractory material made of resistance furnace pyrolytic semlting, and silicon carbide exists in rare in the Nature
Mineral, in the non-oxidized substances high-tech refractory raw material such as contemporary C, N, B, silicon carbide is due to stable chemical performance, thermal coefficient
It is high, thermal expansion coefficient is small, wear-resisting property is good, except making abrasive material with outer, there are also a lot of other purposes, silicon carbide for it is most widely used,
Most economical one kind, the industrial silicon carbide in China are divided into black silicon carbide and two kinds of green silicon carbide, are hexagonal,
Specific gravity is 3.20~3.25, and SiC single crystal is in calorifics, chemical aspect is highly stable, strong in terms of mechanical strength, radiation resistant,
And there is the excellent physical property such as high breakdown voltage, high thermal conductivity compared with Si monocrystalline, therefore can realize Si monocrystalline and
The irrealizable high output of the existing semiconductor material such as GaAs monocrystalline, high frequency, proof voltage, environment resistant etc., can carry out big electric power
Control and energy-efficient power device material, vehicle-mounted high-temperature device material, resistance to are put high-speed high capacity information communication device material
The expectation of the new generation of semiconductor material of wide scope in this way such as ray device material is just surging, as global warming
Countermeasure, the raising of demand power-saving technology, wherein the power electronic technique of energy loss when reducing electrical power conversion is positioned as base
Plinth technology, power electronic technique use silicon semiconductor to carry out technique improvement, but the boundary of the material property from silicon all the time
From the point of view of, performance improves also close to the limit, it is therefore contemplated that be gathered on the silicon carbide with the physical property boundary higher than silicon,
Carborundum phase is for silicon, and with such as band gap be about 3 times, breakdown field strength is about 10 times, thermal conductivity degree is about 3 times excellent
Physical property.
The manufacturing method of traditional SiC substrate is not cut using diamond cutting secant, is not carried out in cutting
Whitewashing, is difficult the SiC substrate surface irregularity for cutting, cutting out to the SiC single crystal of major diameter, largely reduces
The production quality of SiC substrate, when making the bulk-shaped monocrystal of SiC, silicon carbide powder sublimes speed is slow, so that SiC single crystal
The speed of growth is slow on seed crystal, reduces the producing efficiency of single-crystal silicon carbide, increases production cost.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, the present invention provides a kind of manufacturing methods of SiC substrate, solve existing SiC
The manufacturing method of substrate is difficult the SiC substrate surface irregularity for cutting, cutting out to the SiC single crystal of major diameter, largely
On reduce the production quality of SiC substrate, the problem of producing efficiency of single-crystal silicon carbide is low, high production cost.
(2) technical solution
Technical problems based on background technology, the present invention proposes a kind of manufacturing method of SiC substrate, including walks as follows
It is rapid:
S1, prepare SiC powder, as raw material；
S2, the SiC powder raw material in S1 is placed in crucible, installation is made of SiC single crystal in the lid of crucible
Seed crystal grows SiC single crystal on seed crystal, then obtains generally cylindrical SiC by recrystallizing raw material distillation
Bulk-shaped monocrystal, the cylindric single crystal diameter of obtained SiC is 1 inch to 3 inches of cylindrical body；
S3, SiC bulk-shaped monocrystal to be cut is installed on the workbench；
S4, diamond dust and cutting liquid are matched according to 1 to 2 mass ratio, makes mixed mortar, reaches slurry density
Between to 1.2 to 1.3, it is stirred by blender, stirs 2 to 3 hours；
S5, by diamond cutting secant in cutting wheel, form uniform annular gauze, set the cutting line speed of service,
Start cutting machine, mixed mortar is sprayed into diamond cutting secant, makes the diamond cutting secant for being soaked with mixed mortar mortar to SiC block
Shape monocrystalline is cut, finished product.
Cutting liquid is synthetic cutting fluid, is a kind of cutting fluid of aqua type, it is made of chemicals, has storage period
The characteristics of long, safe and non-toxic, high efficiency, best bright finish is a kind of to be used in metal the problem of without physiological-toxicity and environmental pollution
It cuts, cut, grind in process, for cooling down and lubricating the industrial type fluid of cutter and workpiece, cutting fluid is passed through by a variety of auxiliary agents
Compound compatibility forms, and has good cooling performance, greasy property, rustless property, cleaning performance, by spraying mixed mortar pair
Silicon carbide single crystal is cut, so that cutting efficiency is high.
Preferably, in the step S1, SiC powder is the powder containing α type silicon carbide, the powder containing beta-type silicon carbide
Or the powder of the mixture containing α type silicon carbide and beta-type silicon carbide.
The beta-type silicon carbide of α type silicon carbide and cube that carborundum crystals structure is divided into six sides or rhombohedron claims a cube carbon
SiClx, α type silicon carbide constitute many different variants since the stacking sequences of carbon and silicon atom in its crystal structure are different, β type
Silicon carbide is changed into α type silicon carbide when 2100 DEG C or more.
Preferably, in the step S5, the cutting line speed of service is 700m/min to 1600m/min, and cutting tension is 10N
To 80N.
Preferably, in step S5, diamond cutting secant is the electroplating surface diamond particle using high-carbon steel wire as substrate, gold
The diameter of hard rock cutting line is 150um to 400um, and the particle diameter on diamond cutting secant surface is 15um to 70um.
Diamond is commonly called as spark, is a kind of mineral being made of carbon, is the grain that nature is made of simple substance element
Sub- substance is carbon allotrope.
Preferably, in the step S2, SiC powder raw material is placed in such a way that heap density is 0.5 to 1.8g/cm3
It is heated in crucible, so that silicon carbide powder sublimes speed is fast, greatly enhances the production of single-crystal silicon carbide
Efficiency.
(3) beneficial effect
The present invention provides a kind of manufacturing methods of SiC substrate.Have it is following the utility model has the advantages that the SiC substrate manufacturer
S2, SiC powder raw material in S1 is placed in crucible, as raw material in crucible by method by S1, preparation SiC powder
Lid in the seed crystal that is made of SiC single crystal is installed, by recrystallizing raw material distillation, keep SiC single crystal raw on seed crystal
It is long, the bulk-shaped monocrystal of generally cylindrical SiC is then obtained, SiC bulk-shaped monocrystal to be cut S3, is mounted on workbench
On, SiC diamond dust and cutting liquid are matched according to 1 to 2 mass ratio S4, mixed mortar is made, reaches slurry density
Between 1.2 to 1.3, it is stirred by blender, stir 2 to 3 hours, S5, by diamond cutting secant around cutting
On wheel, uniform annular gauze is formed, the cutting line speed of service is set, starts cutting machine, mixed mortar is sprayed into diamond cutting
Secant cuts the diamond cutting secant for being soaked with mixed mortar mortar to SiC bulk-shaped monocrystal, and finished product, the present invention adopts
It whitewashes, the SiC single crystal of major diameter can be cut, the SiC substrate table cut out with diamond cut, and in cutting
Face is smooth, can cut the bulk-shaped monocrystal of muti-piece SiC every time, greatly enhances the production quality of SiC substrate, mentions simultaneously
The high efficiency of cutting, when making the bulk-shaped monocrystal of SiC, silicon carbide powder sublimes speed is fast, so that SiC single crystal is on seed crystal
Speed of growth block greatly enhances the producing efficiency of single-crystal silicon carbide, reduces production cost.
Specific embodiment
The following is a clear and complete description of the technical scheme in the embodiments of the invention, it is clear that described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
The invention discloses a kind of manufacturing methods of SiC substrate, include the following steps:
S1, prepare SiC powder, as raw material；
S2, the SiC powder raw material in S1 is placed in crucible, installation is made of SiC single crystal in the lid of crucible
Seed crystal grows SiC single crystal on seed crystal, then obtains generally cylindrical SiC by recrystallizing raw material distillation
Bulk-shaped monocrystal；
S3, SiC bulk-shaped monocrystal to be cut is installed on the workbench；
S4, diamond dust and cutting liquid are matched according to 1 to 2 mass ratio, makes mixed mortar, reaches slurry density
Between to 1.2 to 1.3, it is stirred by blender, stirs 2 to 3 hours；
S5, by diamond cutting secant in cutting wheel, form uniform annular gauze, set the cutting line speed of service,
Start cutting machine, mixed mortar is sprayed into diamond cutting secant, makes the diamond cutting secant for being soaked with mixed mortar mortar to SiC block
Shape monocrystalline is cut, finished product.
In the present invention, in step S1, SiC powder be the powder containing α type silicon carbide, the powder containing beta-type silicon carbide or
The powder of mixture containing α type silicon carbide and beta-type silicon carbide.
In the present invention, in step S5, the cutting line speed of service be 700m/min to 1600m/min, cutting tension be 10N extremely
80N。
In the present invention, in step S5, diamond cutting secant is the electroplating surface diamond particle using high-carbon steel wire as substrate,
The diameter of diamond cutting secant is 150um to 400um, and the particle diameter on diamond cutting secant surface is 15um to 70um.
In the present invention, in step S2, SiC powder raw material is placed in earthenware in such a way that heap density is 0.5 to 1.8g/cm3
It is heated in crucible.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of manufacturing method of SiC substrate, which comprises the steps of:
S1, prepare SiC powder, as raw material；
S2, the SiC powder raw material in S1 is placed in crucible, the seed crystal being made of SiC single crystal is installed in the lid of crucible,
By recrystallizing raw material distillation, grows SiC single crystal on seed crystal, then obtain the block of generally cylindrical SiC
Shape monocrystalline；
S3, SiC bulk-shaped monocrystal to be cut is installed on the workbench；
S4, diamond dust and cutting liquid are matched according to 1 to 2 mass ratio, makes mixed mortar, reaches slurry density
Between 1.2 to 1.3, it is stirred by blender, stirs 2 to 3 hours；
S5, by diamond cutting secant in cutting wheel, form uniform annular gauze, set the cutting line speed of service, starting
Mixed mortar is sprayed to diamond cutting secant by cutting machine, keeps the diamond cutting secant for being soaked with mixed mortar mortar blocky to SiC single
Crystalline substance is cut, finished product.
2. a kind of manufacturing method of SiC substrate according to claim 1, it is characterised in that: in the step S1, SiC powder
End is the powder containing α type silicon carbide, the powder containing beta-type silicon carbide or the mixture containing α type silicon carbide and beta-type silicon carbide
Powder.
3. a kind of manufacturing method of SiC substrate according to claim 1, it is characterised in that: in the step S5, cutting line
The speed of service is 700m/min to 1600m/min, and cutting tension is 10N to 80N.
4. a kind of manufacturing method of SiC substrate according to claim 1, it is characterised in that: in the step S5, diamond
Cutting line is the electroplating surface diamond particle using high-carbon steel wire as substrate, and the diameter of diamond cutting secant is 150um to 400um,
The particle diameter on diamond cutting secant surface is 15um to 70um.
5. a kind of manufacturing method of SiC substrate according to claim 1, it is characterised in that: in the step S2, Yi Duimi
SiC powder raw material is placed in crucible by the mode that degree is 0.5 to 1.8g/cm3 heats it.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102057084A (en) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
| US20130068157A1 (en) * | 2011-09-21 | 2013-03-21 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide crystal |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
| CN105246826A (en) * | 2013-07-31 | 2016-01-13 | 太平洋水泥株式会社 | Silicon carbide powder and method for producing silicon carbide single crystal |
| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
| CN105922465A (en) * | 2016-04-26 | 2016-09-07 | 北京世纪金光半导体有限公司 | Method for cutting large-size silicon carbide bodies in mortar |
| CN109545680A (en) * | 2018-10-16 | 2019-03-29 | 山东天岳先进材料科技有限公司 | A kind of fast preparation method of high-flatness, low damage single crystal silicon carbide substrate |
-
2019
- 2019-03-05 CN CN201910165370.3A patent/CN109913943A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102057084A (en) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
| US20130068157A1 (en) * | 2011-09-21 | 2013-03-21 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide crystal |
| CN105246826A (en) * | 2013-07-31 | 2016-01-13 | 太平洋水泥株式会社 | Silicon carbide powder and method for producing silicon carbide single crystal |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
| CN105922465A (en) * | 2016-04-26 | 2016-09-07 | 北京世纪金光半导体有限公司 | Method for cutting large-size silicon carbide bodies in mortar |
| CN109545680A (en) * | 2018-10-16 | 2019-03-29 | 山东天岳先进材料科技有限公司 | A kind of fast preparation method of high-flatness, low damage single crystal silicon carbide substrate |
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Application publication date: 20190621 |