CN109904089A - A kind of test method measuring wafer bulk metal - Google Patents
A kind of test method measuring wafer bulk metal Download PDFInfo
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- CN109904089A CN109904089A CN201910104745.5A CN201910104745A CN109904089A CN 109904089 A CN109904089 A CN 109904089A CN 201910104745 A CN201910104745 A CN 201910104745A CN 109904089 A CN109904089 A CN 109904089A
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Abstract
The present invention provides a kind of test methods for measuring wafer bulk metal, belong to field of semiconductor manufacture, including step 1: take 4~10inch of diameter and the unconfined silicon wafer of resistivity 1；Step 2: silicon wafer, which is uploaded to infrared heating furnace, is warming up to 200~300 degree, constant temperature is toasted 1.5~2.5 hours；Step 3: silicon wafer is uploaded to full-automatic surface metal collection system；Step 4: full-automatic surface metal collection system blows hydrofluoric acid vapor 4~6 minutes to silicon chip surface in sample making course；Step 5: the nozzle of full-automatic surface metal collection system draws extracting solution, metal ion is recycled in silicon chip surface；Step 6: testing scanning liquid tenor using Inductively coupled plasma mass spectrometry, the surface metal levels tested out pass through the metal ion spill-out of infrared heating furnace baking.There is no limit test scope is wider, and precision is higher, and cost is lower for silicon wafer diameter and resistivity of the present invention to test.
Description
Technical field
The invention belongs to field of semiconductor manufacture, are related to a kind of test method for measuring wafer bulk metal.
Background technique
Semiconductor manufacturing industry wafer bulk metallic test is difficult, and cost is excessively high when body metallic test, scans when testing heavily doped silicon wafer
Liquid can not recycle, and large-diameter silicon wafer is unable to test, and due to the more wasteful time, can not accomplish asking for the daily monitoring of body metal
Topic.Traditional test mode is corroded using ozone+hydrofluoric acid vapor, recycles metal ion on corrosion of silicon surface,
Using silicon wafer weight after high accuracy balance record corrosion, and corrosion volume is calculated by the difference of weight, inductive coupling etc. from
Sub- mass spectrograph test scanning liquid tenor, thus according to ozone+hydrofluoric acid vapor (HF+O3) volume that erodes and surface gold
Belonging to ion concentration and calculates metal ion content in silicon wafer unit volume, traditional test method has the following disadvantages, 1, by day
Flat volume influences, and cannot test large-diameter silicon wafer；2, it is influenced by by roughness after corroding, as 1 Ω .cm of silicon chip resistivity <,
Inductively coupled plasma mass spectrometry can not recycle scanning liquid, be unable to test；3, cost when a piece of 6 inch silicon wafer of test is
251.53 yuan/piece, higher cost；4, it can not be used as the monitoring of daily body metal by time-constrain.
Summary of the invention
The problem to be solved in the present invention is to be to provide a kind of test method for measuring wafer bulk metal, to the silicon wafer of test
There is no limit test scope is wider, and precision is higher, and cost is lower for diameter and resistivity.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of test side measuring wafer bulk metal
Method includes the following steps,
Step 1: taking 4~10inch of diameter and the unconfined silicon wafer of resistivity 1；
Step 2: silicon wafer described in the first step, which is uploaded to infrared heating furnace, is warming up to 200~300 degree, constant temperature baking
1.5~2.5 hours；
Step 3: the silicon wafer is uploaded to full-automatic surface metal collection system on the basis of second step is completed；
Step 4: the full-automatic surface metal collection system blows hydrofluoric acid vapor 4 to silicon chip surface in sample making course
~6 minutes；
Step 5: the nozzle of the full-automatic surface metal collection system draws extracting solution, metal is recycled in silicon chip surface
Ion；
Step 6: testing scanning liquid tenor using Inductively coupled plasma mass spectrometry, the surface metal tested out contains
Metal ion spill-out of the amount i.e. by infrared heating furnace baking.
Further, in the first step, the diameter of the silicon wafer is 5inch, 6inch or 8inch.
Further, in the second step, the infrared heating furnace is warming up to 250 ± 3 degree, and constant temperature toasts 2 hours.
Further, in the 4th step, hydrofluoric acid vapor is blown 5 minutes to silicon chip surface, flow 180ul/min,
The nozzle of the full-automatic surface metal collection system draws 1000ul extracting solution.
Further, the proportion of the extracting solution is 0.3%HF+11.4%H2O2+ 88.28%H2O, HF (hydrofluoric acid) are dense
Degree: 38% Japan chemical AA-10 purity of rubbing, H more2O2(hydrogen peroxide) concentration: 35% Japan chemical AA-10 purity of rubbing, H more2O is (super
Pure water): resistivity >=18M Ω .cm.
Further, after the completion of second step, 23 ± 2 degree are cooled to, when silicon chip surface reaches room temperature, is inhaled using vacuum
Silicon chip extracting is uploaded to full-automatic surface metal collection system by pen.
Further, from the first step to the 6th step, test environment is hundred grades of toilets, and room temperature is 23 ± 2 degree.
Further, in the third step, the full-automatic surface metal collection system is Beijing Qinghe Zhi Ce company
The full-automatic surface metal collection system of production, in the 6th step, Inductively coupled plasma mass spectrometry Agilent 7700s
Inductively coupled plasma mass spectrometry.
Compared with prior art, the present invention has the advantage that as follows with good effect.
1, for silicon wafer diameter without limitation, 5/6/8inch silicon wafer can be tested the present invention, not coarse by silicon chip surface
Degree influences, and completely, test result is more accurate for the recycling of scanning liquid；
2, testing cost is greatly reduced, 106.81 yuan/piece is down to by 251.31 yuan/piece, in sample making course, is not take up
Full-automatic surface metal collection system time, and the method that can be used as long-term monitoring wafer bulk metal uses；
3, it is operated in strict accordance with above step, simple and convenient, high-efficient, reliable and stable, save the cost, sample making course
When being not take up automatic sample-making system machine, accurate testing is required silicon slice under test size lower.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the test result figure that the present invention carries out two panels silicon wafer using a kind of test method for measuring wafer bulk metal.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
Relative bearing or positional relationship, are merely for convenience of description of the present invention and simplification of the description, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to limit of the invention
System.In addition, term " first ", " second " etc. be used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or
Person implicitly indicates the quantity of indicated technical characteristic.Define as a result, " first ", " second " etc. feature can express or
Implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two
It is a or more than two.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood by concrete condition
Concrete meaning in the present invention.
It elaborates below to specific embodiments of the present invention.
The present invention is a kind of test method for measuring wafer bulk metal, is included the following steps,
Step 1: taking 4~10inch of diameter and the unconfined silicon wafer of resistivity 1；
Step 2: the silicon wafer in the first step, which is uploaded to infrared heating furnace, is warming up to 200~300 degree, constant temperature baking 1.5~
2.5 hour；
Step 3: silicon wafer is uploaded to full-automatic surface metal collection system on the basis of second step is completed；
Step 4: full-automatic surface metal collection system blows 4~6 points of hydrofluoric acid vapor to silicon chip surface in sample making course
Clock；
Step 5: the nozzle of full-automatic surface metal collection system draws extracting solution, metal ion is recycled in silicon chip surface；
Step 6: testing scanning liquid tenor using Inductively coupled plasma mass spectrometry, the surface metal tested out contains
Metal ion spill-out of the amount i.e. by infrared heating furnace baking.
Preferably, in the first step, the diameter of silicon wafer is 5inch, 6inch or 8inch.
Preferably, in second step, infrared heating furnace is warming up to 250 ± 3 degree, and constant temperature toasts 2 hours, 250 degree of enough silicon
Energy needed for the internal metal ion of piece transits to surface, the purpose of constant temperature 2h are to transit to in-vivo metal as much as possible
Silicon chip surface.
Preferably, in the 4th step, hydrofluoric acid vapor is blown 5 minutes to silicon chip surface, flow 180ul/min, daily silicon
One layer of very thin silicon dioxide film can all occur in silicon chip surface behind piece surface and heating, and the thickness of this film probably existsWith
It is interior, and silica, it can only react with few part acid, thus be dissolved, and this structure will use a large amount of hydrogen fluorine just
Acid vapor as cleaning agent, then thisThe silicon dioxide film of left and right thickness is in 5min enough by 38% high-pure hydrofluoric acid
It dissolves, the nozzle absorption 1000ul extracting solution of full-automatic surface metal collection system, ul=microlitres, 1ml=1000 ul.
Preferably, the proportion of extracting solution is 0.3%HF+11.4%H2O2+ 88.28%H2O, HF (hydrofluoric acid) concentration: 38%
Japanese chemical AA-10 purity of rubbing easily is evaporated more using high concentration, and nebulization efficiency is high, and speed is fast, will not cause to damage to silicon wafer,
H2O2(hydrogen peroxide) concentration: chemical AA-10 purity of rubbing 35% Japan, metal ion content control contained by solution inside exist more
Within 10ppt, i.e., 10 receive within grams per liter, the pure water concentration used lower than full-automatic sample-preparing system (VPD), it is possible to meet
Testing requirement avoids the impurity effect test result contained in water, promotes the accuracy of test structure, H2O (ultrapure water): resistance
Rate >=18M Ω .cm, pure water are insulators, and why conductive water used in life is, are because containing mineral in water
The conductors such as matter, metal ion illustrate that water is purer so the resistance value of water is higher (resistivity is lower), avoid containing in water
Impurity effect test result promotes the accuracy of test structure.
Preferably, after the completion of second step, 23 ± 2 degree are cooled to, when silicon chip surface reaches room temperature, uses vacuum WAND
By silicon chip extracting, it is uploaded to full-automatic surface metal collection system, using vacuum WAND, silicon wafer will not be caused to damage, also not
Impurity can be infected with.
Preferably, from the first step to the 6th step, test environment is hundred grades of toilets, and room temperature is 23 ± 2 degree, and following table is environment
Indoor particle test result.
| Particle diameter (um) | Target (a) | Practical (a) |
| 0.3 | 300 | 82 |
| 0.5 | 100 | 10 |
Preferably, in the third step, full-automatic surface metal collection system be the production of Beijing Qinghe Zhi Ce company it is complete from
Dynamic surface metal collection system, in step 6, Inductively coupled plasma mass spectrometry Agilent 7700s inductively coupled plasma matter
Spectrometer.
As shown in Figure 1, same method test samples the 2nd silicon wafer with basket, it can be seen that this test method has preferable
Stability, the above structure is simple, easily operated, safe and reliable, and save the cost, sample making course are not take up automatic sample-making system machine
When, accurate testing requires silicon slice under test size lower.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (8)
1. a kind of test method for measuring wafer bulk metal, it is characterised in that: include the following steps,
Step 1: taking 4~10inch of diameter and the unconfined silicon wafer of resistivity 1；
Step 2: silicon wafer described in the first step, which is uploaded to infrared heating furnace, is warming up to 200~300 degree, constant temperature baking 1.5~
2.5 hour；
Step 3: the silicon wafer is uploaded to full-automatic surface metal collection system on the basis of second step is completed；
Step 4: the full-automatic surface metal collection system blows 4~6 points of hydrofluoric acid vapor to silicon chip surface in sample making course
Clock；
Step 5: the nozzle of the full-automatic surface metal collection system draws extracting solution, metal ion is recycled in silicon chip surface；
Step 6: testing scanning liquid tenor using Inductively coupled plasma mass spectrometry, the surface metal levels tested out are i.e.
The metal ion spill-out toasted by infrared heating furnace.
2. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: in the first step
In, the diameter of the silicon wafer is 5inch, 6inch or 8inch.
3. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: in the second step
In, the infrared heating furnace is warming up to 250 ± 3 degree, and constant temperature toasts 2 hours.
4. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: in the 4th step
In, hydrofluoric acid vapor is blown 5 minutes to silicon chip surface, flow 180ul/min, the spray of the full-automatic surface metal collection system
Mouth draws 1000ul extracting solution.
5. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: the extracting solution
Proportion is 0.3%HF+11.4%H2O2+ 88.28%H2O, HF (hydrofluoric acid) concentration: 38% Japan chemical AA-10 purity of rubbing more,
H2O2(hydrogen peroxide) concentration: 35% Japan chemical AA-10 purity of rubbing, H more2O (ultrapure water): resistivity >=18M Ω .cm.
6. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: completed in second step
Afterwards, 23 ± 2 degree are cooled to, when silicon chip surface reaches room temperature, using vacuum WAND by silicon chip extracting, is uploaded to full-automatic surface
Metal collection system.
7. a kind of test method for measuring wafer bulk metal according to claim 1, it is characterised in that: from the first step
To the 6th step, test environment is hundred grades of toilets, and room temperature is 23 ± 2 degree.
8. the method for the test method using a kind of measurement wafer bulk metal described in claim 1, it is characterised in that: described
In third step, the full-automatic surface metal collection system is the full-automatic surface metal collection of Beijing Qinghe Zhi Ce company production
System, in the 6th step, Inductively coupled plasma mass spectrometry Agilent 7700s Inductively coupled plasma mass spectrometry.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112683988A (en) * | 2020-12-28 | 2021-04-20 | 上海新昇半导体科技有限公司 | Method for detecting metal impurities in wafer |
| CN112713103A (en) * | 2021-03-29 | 2021-04-27 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
| CN113130366A (en) * | 2021-03-17 | 2021-07-16 | 江苏鲁汶仪器有限公司 | Nozzle for wafer scanning and system and application thereof |
| CN114459946A (en) * | 2022-01-29 | 2022-05-10 | 西安奕斯伟材料科技有限公司 | Method and equipment for testing metal content of silicon wafer |
| WO2023284205A1 (en) * | 2021-07-16 | 2023-01-19 | 江苏鲁汶仪器有限公司 | Online sampler and contamination analysis system |
| CN117168942A (en) * | 2023-11-01 | 2023-12-05 | 山东有研艾斯半导体材料有限公司 | Sampling method for detecting metal on surface of silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112683988A (en) * | 2020-12-28 | 2021-04-20 | 上海新昇半导体科技有限公司 | Method for detecting metal impurities in wafer |
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| WO2023284205A1 (en) * | 2021-07-16 | 2023-01-19 | 江苏鲁汶仪器有限公司 | Online sampler and contamination analysis system |
| CN114459946A (en) * | 2022-01-29 | 2022-05-10 | 西安奕斯伟材料科技有限公司 | Method and equipment for testing metal content of silicon wafer |
| CN117168942A (en) * | 2023-11-01 | 2023-12-05 | 山东有研艾斯半导体材料有限公司 | Sampling method for detecting metal on surface of silicon wafer |
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