CN109898058A - It is a kind of to improve the combination crucible for evaporating line stability and the source furnace with the crucible using saturated vapor pressure - Google Patents
It is a kind of to improve the combination crucible for evaporating line stability and the source furnace with the crucible using saturated vapor pressure Download PDFInfo
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- CN109898058A CN109898058A CN201910259731.0A CN201910259731A CN109898058A CN 109898058 A CN109898058 A CN 109898058A CN 201910259731 A CN201910259731 A CN 201910259731A CN 109898058 A CN109898058 A CN 109898058A
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- crucible
- current limiting
- limiting component
- line stability
- supporting table
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Abstract
The combination crucible for evaporating line stability and the source furnace with the crucible are improved using saturated vapor pressure the invention discloses a kind of, belong to film growth techniques field.Combination crucible of the invention includes crucible top and crucible bottom, and crucible top connects crucible bottom by supporting table, and movable current limiting component is provided in supporting table, and movable current limiting component is detachable apparatus, and restricted orifice is arranged on movable current limiting component.The present invention is by being put into current limiting component in supporting table, so that crucible charge region reaches saturated vapor pressure, control evaporation rate makes it place one's entire reliance upon can be with the crucible temperature of stability contorting, influence of the evaporation source material modification of surface morphology to evaporation line in growth course is avoided, greatly improves line stability to prepare higher-quality film.
Description
Technical field
The present invention relates to film growth techniques fields, improve evaporation using saturated vapor pressure more specifically to a kind of
The combination crucible of line stability and the source furnace with the crucible.
Background technique
Environment, the energy, life and new material are the four big projects that current mankind faces, wherein the research requirement to new material
Atom can be manipulated, and thin film technique is the key that then to carry out manipulating point of penetration to atom.The representativeness of thin film technique
Means are MBE grown growths, are mapped to the clean lining being heated by atom or molecular beam that heat source evaporation is generated
Film is generated on bottom.The development of this technology is that electronic device process increasingly higher demands can be achieved, and can be realized pair
Layer planes structure that dopant profiles can be controlled accurately become.Using molecular beam epitaxy technique (MBE), thickness can be repeatedly grown
The Ultra Thin Epitaxial layer that only 4 angstroms of degree, and the interface between epitaxial layer can accurately control growth.
MBE grown growing technology is one of the advanced means of current new material exploitation, and generating film not is to steam
The simple accumulation of object is sent out, it is required that the atom of evaporant carries out on substrate outside by the order arranged in advance, with atomic accuracy
Prolong growth.Its representative applications is the growth of the nanometers tectosome such as Quantum Well and quantum dot, and Quantum Well has been used for production half
Conductor Laser, artificial intelligence material and mass storage device；Quantum dot is applied to single electron triode.Atomic level it is thin
Film growth and new material exploitation, need high performance molecular beam epitaxy evaporation source.Therefore the stability for controlling molecular beam, to growth
The material of high quality is most important.
Molecular beam epitaxial growth concrete implementation mode is exactly the material that will be grown, by the different by high-purity list of element
Matter Metal Source materials are individually placed in the crucible of different injection sources, then under the action of external resistor silk, are heated to corresponding
Temperature, at this time in crucible, each element reaches higher vapor pressure, will eject molecular flow, spouting molecule or original
After son reaches substrate surface according to the order and quantity of baffle controls, it will be adsorbed on substrate surface, then by migrating, arranging again
Column etc., finally stop in position, successively form epitaxial film.But during actual production and research, crucible
In be generally unable to reach saturated vapor pressure, evaporation rate is proportional to evaporation source material surface area, evaporates in thin film growth process
Source material modification of surface morphology has apparent influence to line stability, thus limit film growth control precision with it is made
The quality of standby film.To film preparation precision, higher requirements are also raised for the continuous development of electronic technology, promotes people to steaming
The line stability that rises expands positive exploration, therefore needs to improve crucible design to further increase the stabilization of evaporation line
Property.
Through retrieving, the title of innovation and creation are as follows: New type detachable carbon carbon crucible (application number: 201410566140.5, application
Day: 2014-10-21), split type carbon carbon crucible structure is used, crucible helps portion and crucible side middle part is all made of carbon carbon materials matter, crucible
Bottom use graphite material, split type structure primarily to facilitate operator remove silica crucible, reduce the labor of operator
Fatigue resistance, saving are torn open the furnace time, are improved production efficiency and are reduced production cost, but present application may not apply to outside molecular beam
Prolong film generation technique.
In addition, the title of innovation and creation are as follows: a kind of cryogenic vacuum evaporation source (application number: 201720550756.2 applyings date:
2017-05-17), comprising: heating system, cooling system, temp measuring system, control system, connection component；Electrode is logical in the device
Electricity realizes the evaporation to alkali metal and organic compound to the filament heating of heating system；The thermocouple of temp measuring system passes through electricity
Thermo wires conduction detects real-time evaporating temperature, and the water inlet pipe of cooling system is passed through cooling water, achievees the effect that low-temperature evaporation；Mouth of pot
Whether butterfly above can adjust the substance for controlling and evaporating to matrix plated film by hand lever；But there is no solve evaporation
The problem of line stability.
Summary of the invention
1. technical problems to be solved by the inivention
It is an object of the invention to overcome in film preparing technology, evaporation source material modification of surface morphology is easy to cause line
Unstable deficiency provides a kind of using the combination crucible of saturated vapor pressure raising evaporation line stability and with the crucible
Source furnace；
A kind of combination crucible that evaporation line stability is improved using saturated vapor pressure wherein provided is removable by being arranged
It unloads aperture current-limiting apparatus and guarantees that crucible charge region reaches stable saturated vapor pressure, overcome evaporation source material in thin film growth process
Expect influence of the modification of surface morphology to line, greatly improves line stability, and then higher-quality film can be prepared；
The source furnace of a kind of raising evaporation line stability wherein provided, by the saturated vapor for controlling crucible charge region
Pressure, overcomes influence of the evaporation source material modification of surface morphology to line in thin film growth process, so that evaporation rate is completely dependent on
In line stability can be greatly improved, and then can prepare higher-quality film with the temperature of stability contorting.
2. technical solution
In order to achieve the above objectives, technical solution provided by the invention are as follows:
A kind of combination crucible that evaporation line stability is improved using saturated vapor pressure of the invention, crucible from top to bottom according to
Secondary to be provided with crucible top and crucible bottom, the crucible top connects crucible bottom, the supporting table by supporting table
On be provided with movable current limiting component, restricted orifice, table of the metering hole perpendicular to movable current limiting component are set on movable current limiting component
Face.
Preferably, the upper surface diameter of the supporting table is d1, and the following table radius surface of supporting table is d2, d1 > d2, described
Movable current limiting component be movably arranged on the upper surface of supporting table.
Preferably, the material of the movable current limiting component is hot pressed boron, aluminium oxide or tungsten.
Preferably, the diameter of the metering hole is dr, and the radius of supporting table lower surface is d2,10dr < d2.
Preferably, the metering hole is evenly distributed on movable current limiting component, and the metering hole is set as 1, limit
The center point of movable current limiting component is arranged in discharge orifice；Or metering hole is set as multiple, metering hole is uniform along movable current limiting component
Setting around the center of circle.
Preferably, the crucible top and crucible bottom are straight tube structure, and the diameter on crucible top is d1, crucible bottom
Diameter be d2, d1> d2。
A kind of source furnace of raising evaporation line stability of the invention, including crucible, evaporation source and heating unit, it is described
Crucible is set in evaporation source, and the outside of crucible is provided with heating unit, and the heating unit is described for heating to crucible
Crucible is the described in any item crucibles of claim 1-5.
Preferably, it is provided with supporting table on crucible, movable current limiting component is provided in supporting table.
Preferably, beam flow baffle plate is provided on the opening direction of crucible.
Preferably, the evaporation source includes outside protective covers and fixed pedestal, and accommodating chamber is provided in outside protective covers, described solid
Determine the bottom that pedestal is set to accommodating chamber, the fixed pedestal is for fixing crucible bottom.
3. beneficial effect
Using technical solution provided by the invention, compared with existing well-known technique, there is following remarkable result:
(1) a kind of combination crucible that evaporation line stability is improved using saturated vapor pressure of the invention, it is creative
Setting activity current limiting component on crucible side middle part guarantees that crucible charge region reaches stable by the metering hole on movable current limiting component
Saturated vapor pressure, overcome influence of the evaporation source material modification of surface morphology to line in existing thin film growth process so that steam
Hair rate places one's entire reliance upon and can greatly improve line stability with the temperature of stability contorting to prepare higher-quality film；
(2) a kind of combination crucible that evaporation line stability is improved using saturated vapor pressure of the invention, table in supporting table
The diameter in face is d1, and the radius of supporting table lower surface is d2, and d1 > d2, is used to support movable current limiting component, it is thin to carry out extension
When the preparation of film, movable current limiting component is placed on the upper surface of supporting table, addition and the crucible of evaporation source material are facilitated
Cleaning；
(3) the source furnace of a kind of raising of the invention evaporation line stability reduces beam flow baffle plate and is turned on or off halved tie
The influence of stability is flowed, more stability contorting line meets modern electronic devices development pair to prepare higher-quality film
The requirements at the higher level that thin film technique proposes.
Detailed description of the invention
Fig. 1 is a kind of overall structure of combination crucible that evaporation line stability is improved using saturated vapor pressure of the invention
Schematic diagram；
Fig. 2 is the overall structure diagram of movable current limiting component；
Fig. 3 is the structural schematic diagram of the supporting table of embodiment 1；
Fig. 4 is the structural schematic diagram of the metering hole of embodiment 1；
Fig. 5 is the overall structure diagram for the source furnace that line stability is evaporated in a kind of raising of the invention.
Label declaration in schematic diagram:
100, crucible；110, crucible top；120, crucible bottom；130, supporting table；
200, movable current limiting component；210, metering hole；
300, evaporation source；310, outside protective covers；311, accommodating chamber；320, fixed pedestal；321, temperature element；322, pedestal
Positioning tube；
400, heating unit；
500, beam flow baffle plate.
Specific embodiment
Hereafter detailed description of the present invention and example embodiment are more fully understood in combination with attached drawing, wherein of the invention
Element and feature are identified by appended drawing reference.
Structure depicted in this specification attached drawing, ratio, size etc., only to cooperate the revealed content of specification,
So that those skilled in the art understands and reads, enforceable qualifications are not intended to limit the invention, therefore do not have technology
On essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size can be generated not influencing the present invention
The effect of and the purpose that can reach under, should all still fall in the range of disclosed technology contents obtain and can cover.Together
When, cited such as "upper", "lower", "left", "right", " centre " term in this specification are merely convenient to the clear of narration,
Rather than to limit enforceable range, relativeness is altered or modified, under the content of no substantial changes in technology, when also regarding
For the enforceable scope of the present invention；In addition to this, it is not independent from each other between each embodiment of the invention, but can be with
It is combined.
Embodiment 1
As depicted in figs. 1 and 2, a kind of combination earthenware improving evaporation line stability using saturated vapor pressure of the invention
Crucible, crucible 100 are disposed with crucible top 110 and crucible bottom 120 from top to bottom；The crucible top 110 passes through branch
It supports platform 130 and connects crucible bottom 120, be provided with movable current limiting component 200, movable current limiting component in the supporting table 130
200 and the position that contacts of supporting table 130 be provided with bayonet, restricted orifice 210, metering hole 210 are set on movable current limiting component 200
Perpendicular to the surface of movable current limiting component 200, the direction by adjusting bayonet adjusts the shooting angle of line.Base of the present invention
In the stability for reducing heat radiation theory raising line, creatively in 100 inside installation activity current limiting component 200 of crucible, lead to
It crosses and opens up metering hole 210 on movable current limiting component 200, it is ensured that realize huge steam pressure difference, Jin Erti in the inside of crucible 100
The stability of height evaporation line, prepares higher-quality film.
As shown in figure 3, the upper surface diameter of supporting table 130 of the invention is d1, the following table radius surface of supporting table 130 is
D2, d1 > d2, crucible top 110 and crucible bottom 120 are straight tube structure, the diameter d on crucible top 1101Equal to supporting table
130 upper surface diameter d1, the diameter d of crucible bottom 1202Equal to following table the radius surface d2, d of supporting table 1301> d2, support
Platform 130 is used to support movable current limiting component 200.During preparing film, saturated vapor pressure when film is grown is relative to big
Movable current limiting component 200 is placed on the upper surface of supporting table 130 by very little for air pressure, simplifies activity current limiting component 200
Demounting procedure, facilitate the addition of evaporation source material and the cleaning of crucible 100.And in existing molecular beam epitaxy technique, made
The diameter on crucible top and the diameter of crucible bottom are equal, and the present invention provides for how solution prepares higher-quality film
A kind of technical solutions of different designs.
Molecular beam epitaxial growth thin-film material is a kind of nonequilibrium state growth, and growth course is mainly by molecular beam and crystal
Surface reaction kinetics control, influence of the molecular beam control to growth is very big, i.e. the order of accuarcy of molecular beam control, determines
The quality of growing film, that is, atomic arrangement order.And in the growth course of film, the temperature of molecular beam and material source is tight
One of an important factor for lattice are corresponding, and wherein equilibrium vapour pressure is influence molecular beam, theoretical foundation are as follows: pass through heating evaporation material
Material releases atom or molecule from the surface of liquid phase or solid phase, then corresponding to the kinetic energy of the velocity component of vertical surface
Have to be larger than atom or the intermolecular possessed constraint potential energy that attracts each other.Kinetic energy depends on the warm-up movement of molecule, therefore, improves
Heating temperature can increase the number of release particle.Evaporation rate is directly proportional to number of evaporation particle.However, evaporation process is to disappear
Consuming the interior of object can be cost, in order not to reduce object temperature, it is necessary to supplement thermal energy；Further, since liquid or solid-state turn
There is volume expansion during becoming gaseous, the extra work in evaporation process.
It is worth noting that the variation of evaporation source material surface topography will to the stability of molecular beam in growth course
Large effect is generated, to influence the quality and electrical properties of film and its device.With the consumption of evaporation source material, if steaming
The material surface that rises is uneven, then the surface area of evaporation source material will change, and can cause 1% magnitude of molecular beam
Change even bigger variation, the physical property especially sensitive to the factors such as impurity and stoichiometric ratio generates direct shadow
It rings, and directly affects the quality of film.And in open pot used in the prior art, the ion that source material is evaporated is direct
Surface is left, dynamic equilibrium is not reached.
The invention proposes the combination crucible design using aperture current-limiting apparatus to stablize molecular beam, further
Ground, opens up metering hole 210 on movable current limiting component 200, and the diameter of movable current limiting component 200 is d200, movable current limiting component
The diameter of the metering hole 210 opened up on 200 is dr, 10dr < d2 (as shown in Figure 4).Metering hole 210 is evenly distributed on movable limit
It flows on component 200, metering hole 210 can be set in the center of circle of movable current limiting component 200, or along movable current limiting component 200
The center of circle is symmetrical.
On the one hand, movable current limiting component 200 is the space that crucible bottom 120 has built a relative closure, saturated vapor
The air pressure of gas phase when pressure refers to reaching dynamic equilibrium between gas phase and solid phase or gas phase and liquid phase, usually in closed space
It is just able to achieve, guarantees that crucible charge region reaches stable saturated vapor pressure, overcome evaporation source material in existing thin film growth process
Influence of the modification of surface morphology to line is expected, so that evaporation rate, which places one's entire reliance upon, to be greatly improved with the temperature of stability contorting
Line stability is to prepare higher-quality film；On the other hand, the diameter of metering hole 210 is straight much smaller than crucible bottom 120
Diameter realizes that huge steam pressure difference is realized in 100 lower regions of crucible of baffle segmentation, it is ensured that lower end reaches saturated vapor pressure, gram
Influence of the evaporation source material modification of surface morphology to line in existing thin film growth process is taken, so that evaporation rate places one's entire reliance upon
Line stability can be greatly improved to prepare higher-quality film, meets modern electronic devices with the temperature of stability contorting
Develop the requirements at the higher level proposed to thin film technique.
Further, the material of movable current limiting component 200 is identical as the material of crucible 100, the material of movable current limiting component 200
Matter can be hot pressed boron, aluminium oxide or tungsten, this kind of material surface is smooth, and compactness is good, can work under ultrahigh vacuum,
Its physical and chemical performance is stablized, and does not react with evaporation source material.
Embodiment 2
As shown in figure 5, a kind of source furnace of raising evaporation line stability of the present embodiment, including crucible 100, evaporation source
300 and heating unit 400, the crucible 100 be set in evaporation source 300, the outside of crucible 100 is provided with heating unit
400, the heating unit 400 is for heating crucible 100, and heating unit 400 is plus resistance wire, the crucible 100 are real
Apply crucible 100 described in example 1.Beam flow baffle plate 500 (as shown in Figure 3) is provided on the opening direction of crucible 100.The present invention passes through
The alternately accurate layer-by-layer growth for controlling film of the beam flow baffle plate 500 on opening and closing 100 top of crucible, and evaporation source material table
The variation of face pattern will affect line stability, to influence the quality and electrical properties of film and its device.The present invention passes through
The crucible 100 in MBE technology is improved, more stable temperature and line is obtained using completely new technical solution and controls, and then avoid
Beam flow baffle plate 500 turns on or off the influence to temperature stability, to improve the quality of film.
Further, evaporation source 300 includes outside protective covers 310 and fixed pedestal 320, is provided with appearance in outside protective covers 310
Receive chamber 311, the fixed pedestal 320 is set to the bottom of accommodating chamber 311, and the fixed pedestal 320 is for fixing crucible bottom
120.The accommodating chamber 311 is greater than the outer diameter of crucible 100, i.e. 100 outer wall of crucible for accommodating crucible 100, the internal diameter of accommodating chamber 311
It is not contacted with accommodating chamber 311；Temperature element 321 is provided on fixed pedestal 320, temperature element 321 is for detecting crucible 100
Temperature and base stand location cylinder 322 is provided on fixed pedestal 320 to constantly detect the temperature of crucible 100, the pedestal is fixed
Position cylinder 322 with 100 bottom of crucible for matching, and the outer diameter of base stand location cylinder 322 is less than the internal diameter of accommodating chamber 311, pedestal
Positioning tube 322 is not contacted with 311 inner wall of accommodating chamber.
The present invention is described in detail above in conjunction with specific exemplary embodiment.It is understood, however, that can not take off
It is carry out various modifications in the case where from the scope of the present invention being defined by the following claims and modification.Detailed description and drawings
Should be to be considered only as it is illustrative and not restrictive, if there is any such modifications and variations, then they all will
It falls into the scope of the present invention described herein.In addition, Development Status and meaning that background technique is intended in order to illustrate this technology,
It is not intended to limit the present invention or the application and application field of the invention.
More specifically, although exemplary embodiment of the present invention has been described herein, the invention is not limited to
These embodiments, but including those skilled in the art according to front detailed description it can be appreciated that it is modified, omit,
Any and whole embodiments of (such as between each embodiment) combination, adaptive change and/or replacement.In claim
It limits the language according to used in claim and is widely explained, and be not limited in foregoing detailed description or in reality
The example described during this application is applied, these examples should be considered as nonexcludability.For example, in the present invention, term is " preferably
Ground " be not it is exclusive, here it means that " preferably, but be not restricted to that ".It is in office where method or process claims
In any step for enumerating can execute in any order and be not limited to the sequence proposed in claim.Therefore, of the invention
Range should only be determined by appended claims and its legal equivalents, rather than by descriptions and examples given above Lai
It determines.
Claims (10)
1. a kind of combination crucible for improving evaporation line stability using saturated vapor pressure, it is characterised in that: the crucible
(100) it is disposed with crucible top (110) and crucible bottom (120) from top to bottom, the crucible top (110) passes through branch
Platform (130) connection crucible bottom (120) is supportted, is provided with movable current limiting component (200) in the supporting table (130), activity limit
It flows and restricted orifice (210) is set on component (200), surface of the metering hole (210) perpendicular to movable current limiting component (200).
2. a kind of combination crucible for improving evaporation line stability using saturated vapor pressure according to claim 1, special
Sign is: the upper surface diameter of the supporting table (130) is d1, and the following table radius surface of supporting table (130) is d2, d1 > d2, institute
The movable current limiting component (200) stated is movably arranged on the upper surface of supporting table (130).
3. a kind of combination crucible for improving evaporation line stability using saturated vapor pressure according to claim 1, special
Sign is: the material of the movable current limiting component (200) is hot pressed boron, aluminium oxide or tungsten.
4. a kind of combination crucible for improving evaporation line stability using saturated vapor pressure according to claim 1, special
Sign is: the diameter of the metering hole (210) is dr, and the radius of supporting table (130) lower surface is d2,10dr < d2.
5. a kind of combination crucible for improving evaporation line stability using saturated vapor pressure according to claim 1, special
Sign is: the metering hole (210) is evenly distributed on movable current limiting component (200), and the metering hole (210) is set as
1, the center point in movable current limiting component (200) is arranged in metering hole (210)；Or metering hole (210) is set as multiple, current limliting
Hole (210) is uniformly arranged around the center of circle along movable current limiting component (200).
6. according to a kind of described in any item combination earthenwares for improving evaporation line stability using saturated vapor pressure of claim 2-5
Crucible, it is characterised in that: the crucible top (110) and crucible bottom (120) be straight tube structure, crucible top (110) it is straight
Diameter is d1, the diameter of crucible bottom (120) is d2, d1> d2。
7. a kind of source furnace for improving evaporation line stability, it is characterised in that: including crucible (100), evaporation source (300) and heating
Unit (400), the crucible (100) are set in evaporation source (300), and the outside of crucible (100) is provided with heating unit
(400), for the heating unit (400) for heating to crucible (100), the crucible (100) is any one of claim 1-5
The crucible (100).
8. a kind of source furnace for improving evaporation line stability according to claim 7, it is characterised in that: on crucible (100)
It is provided with supporting table (130), movable current limiting component (200) is provided in supporting table (130).
9. a kind of source furnace for improving evaporation line stability according to claim 7, it is characterised in that: crucible (100)
Beam flow baffle plate (500) are provided on opening direction.
10. according to a kind of described in any item source furnaces for improving evaporation line stability of claim 7-9, it is characterised in that: institute
Stating evaporation source (300) includes outside protective covers (310) and fixed pedestal (320), is provided with accommodating chamber in outside protective covers (310)
(311), the fixed pedestal (320) is set to the bottom of accommodating chamber (311), and the fixed pedestal (320) is for fixing under crucible
Portion (120).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910259731.0A CN109898058B (en) | 2019-04-02 | 2019-04-02 | Combined crucible for improving stability of evaporation beam by utilizing saturated vapor pressure and source furnace with crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910259731.0A CN109898058B (en) | 2019-04-02 | 2019-04-02 | Combined crucible for improving stability of evaporation beam by utilizing saturated vapor pressure and source furnace with crucible |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109898058A true CN109898058A (en) | 2019-06-18 |
| CN109898058B CN109898058B (en) | 2020-08-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774477A (en) * | 2021-08-16 | 2021-12-10 | 中国电子科技集团公司第十一研究所 | Crucible and molecular beam epitaxy system |
| CN113913755A (en) * | 2021-10-12 | 2022-01-11 | 中国科学技术大学 | Film preparation system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1444423A (en) * | 2002-03-08 | 2003-09-24 | 伊斯曼柯达公司 | Long-strip thermal physical steam depsotion source for making organic luminescent device |
| CN101942639A (en) * | 2009-07-02 | 2011-01-12 | 三菱重工业株式会社 | Vacuum vapor deposition equipment |
| CN101988185A (en) * | 2010-12-14 | 2011-03-23 | 无锡虹彩科技发展有限公司 | Film coating source, vacuum film coating device and film coating process thereof |
| CN103429784A (en) * | 2011-03-11 | 2013-12-04 | 夏普株式会社 | Vapor deposition particle projection device and vapor deposition device |
| JP2015067846A (en) * | 2013-09-27 | 2015-04-13 | 株式会社日立ハイテクファインシステムズ | Evaporation source, vacuum deposition apparatus, and method for manufacturing organic el display device |
| CN106893981A (en) * | 2017-03-30 | 2017-06-27 | 南京大学 | A kind of crucible for improving evaporation line stability and the source stove with the crucible |
| CN207699657U (en) * | 2017-12-29 | 2018-08-07 | 上海升翕光电科技有限公司 | A kind of OLED linear evaporations source structure |
-
2019
- 2019-04-02 CN CN201910259731.0A patent/CN109898058B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1444423A (en) * | 2002-03-08 | 2003-09-24 | 伊斯曼柯达公司 | Long-strip thermal physical steam depsotion source for making organic luminescent device |
| CN101942639A (en) * | 2009-07-02 | 2011-01-12 | 三菱重工业株式会社 | Vacuum vapor deposition equipment |
| CN101988185A (en) * | 2010-12-14 | 2011-03-23 | 无锡虹彩科技发展有限公司 | Film coating source, vacuum film coating device and film coating process thereof |
| CN103429784A (en) * | 2011-03-11 | 2013-12-04 | 夏普株式会社 | Vapor deposition particle projection device and vapor deposition device |
| JP2015067846A (en) * | 2013-09-27 | 2015-04-13 | 株式会社日立ハイテクファインシステムズ | Evaporation source, vacuum deposition apparatus, and method for manufacturing organic el display device |
| CN106893981A (en) * | 2017-03-30 | 2017-06-27 | 南京大学 | A kind of crucible for improving evaporation line stability and the source stove with the crucible |
| CN207699657U (en) * | 2017-12-29 | 2018-08-07 | 上海升翕光电科技有限公司 | A kind of OLED linear evaporations source structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774477A (en) * | 2021-08-16 | 2021-12-10 | 中国电子科技集团公司第十一研究所 | Crucible and molecular beam epitaxy system |
| CN113774477B (en) * | 2021-08-16 | 2023-03-03 | 中国电子科技集团公司第十一研究所 | Crucible and molecular beam epitaxy system |
| CN113913755A (en) * | 2021-10-12 | 2022-01-11 | 中国科学技术大学 | Film preparation system |
| CN113913755B (en) * | 2021-10-12 | 2022-11-18 | 中国科学技术大学 | Film preparation system |
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| CN109898058B (en) | 2020-08-04 |
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