CN109890540A - Composite polycrystal-diamond with sintering aid compound, the compound or their mixture that are formed by sintering aid compound - Google Patents
Composite polycrystal-diamond with sintering aid compound, the compound or their mixture that are formed by sintering aid compound Download PDFInfo
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- CN109890540A CN109890540A CN201680089647.3A CN201680089647A CN109890540A CN 109890540 A CN109890540 A CN 109890540A CN 201680089647 A CN201680089647 A CN 201680089647A CN 109890540 A CN109890540 A CN 109890540A
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- Prior art keywords
- sintering aid
- compound
- pdc
- diamond
- dissociation
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- 238000005245 sintering Methods 0.000 title claims abstract description 158
- 150000001875 compounds Chemical class 0.000 title claims abstract description 105
- 239000010432 diamond Substances 0.000 title claims abstract description 100
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 100
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- 239000002131 composite material Substances 0.000 title claims abstract description 8
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 58
- 230000005593 dissociations Effects 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000002671 adjuvant Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 12
- 229910052752 metalloid Inorganic materials 0.000 claims description 9
- 150000002738 metalloids Chemical class 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000012752 auxiliary agent Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims 1
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 30
- 238000002386 leaching Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- LFSBSHDDAGNCTM-UHFFFAOYSA-N cobalt(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Co+2] LFSBSHDDAGNCTM-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000005087 graphitization Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- DEVSOMFAQLZNKR-RJRFIUFISA-N (z)-3-[3-[3,5-bis(trifluoromethyl)phenyl]-1,2,4-triazol-1-yl]-n'-pyrazin-2-ylprop-2-enehydrazide Chemical compound FC(F)(F)C1=CC(C(F)(F)F)=CC(C2=NN(\C=C/C(=O)NNC=3N=CC=NC=3)C=N2)=C1 DEVSOMFAQLZNKR-RJRFIUFISA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000011034 rock crystal Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910019096 CoTiO3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- -1 Q is nonmetallic Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000002955 immunomodulating agent Substances 0.000 description 1
- 229940121354 immunomodulator Drugs 0.000 description 1
- 230000002584 immunomodulator Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/42—Rotary drag type drill bits with teeth, blades or like cutting elements, e.g. fork-type bits, fish tail bits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
- B22F2302/10—Carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
- B22F2302/40—Carbon, graphite
- B22F2302/406—Diamond
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5463—Particle size distributions
- C04B2235/5481—Monomodal
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Geology (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Earth Drilling (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
The disclosure provides a kind of composite polycrystal-diamond (PDC), the PDC includes substrate and polycrystalline diamond platform, the polycrystalline diamond platform includes sintering aid compound, the non-sintered adjuvant component of dissociation, derivative compound or their mixture, and also includes the sintering aid of dissociation.The present invention also provides a kind of earth-boring bits, the earth-boring bits include bit body and the PDC in cutter form.The disclosure also provides a kind of method for forming PDC, which comprises the mixture of substrate and diamond crystals and sintering aid compound is placed in tank；And HTHP process is executed to form PDC, the PDC includes substrate and polycrystalline diamond platform, the polycrystalline diamond platform is formed by the diamond crystals and the sintering aid compound, and includes the sintering aid of the sintering aid compound, the non-sintered adjuvant component of dissociation, derivative compound or their mixture and dissociation.
Description
Technical field
A kind of cutter this disclosure relates to composite polycrystal-diamond (PDC), in such as earth-boring bits.
Background technique
The component of various commercial plants is commonly subjected to extreme condition, such as high temperature and with rigid surface and/or abrasive surfaces
HI high impact contact.For example, for being frequently run onto extreme temperature and pressure during oil exploitation or the probing for purpose of digging up mine.When
When being suitably used in the cutting element or wear resistant contact element for probing, diamond is because of its impayable mechanical property
And it can be most effective material.Diamond anomaly is hard, and heat is conducted away from the contact point with abrasive surfaces, and can be
Other benefits are provided under the conditions of such.
Due to the random distribution of diamond crystal, in the diamond of plycrystalline diamond form, toughness is increased compared with single-crystal diamond
The case where adding, crossing entire thickness of diamond this avoids the specific plane of disruption that may be present in such as single-crystal diamond.Therefore, gather
Diamond is often preferred diamond form in many probing applications.It is usual using the drill bit cutting elements of polycrystalline diamond
Referred to as composite polycrystal-diamond (PDC) cutter.Therefore, the drill bit for being incorporated to PDC cutter can be described as PDC drill bit.
PDC can be in cubic apparatus formula, belt or other press by passing through little crystal grain diamond and other starting materials
It is manufactured by hyperpressure and temperature condition.A kind of PDC manufacturing process is related to: polycrystalline diamond platform is directly formed to such as carbon
In the substrate for changing tungsten substrate.The process is related to: will include the substrate of such as sintering aid of cobalt (Co) together with the loose of mixing
Diamond crystals are placed into the container of press, and the content of the press is made to be subjected to high temperature and pressure (HTHP) compacting
Circulation.The high temperature and high pressure causes small diamond crystals to form the whole polycrystalline diamond platform being closely bonded with the substrate,
Wherein Co serves as sintering aid to promote the formation of new diamond-diamond key.
Although can be used to form polycrystalline diamond platform, the sintering aid and diamond phase of such as Co is more online than usually having
Property and both volumes on significant higher thermal expansion coefficient (CTE) so that when PDC heats up during use, polycrystalline diamond
(PCD|EPHI|) in remaining sintering aid material faster or to a greater degree expanded than diamond, this causes crackle/micro- sometimes
Residual stress in crackle or otherwise change diamond crystals.Polycrystalline diamond platform can be leached described in removing
At least part of sintering aid.Not leach PDC more thermally stable than similar by PDC after gained leaching.To the sintering aid
Most leaching generate thermostabilization plycrystalline diamond (TSP) diamond table.At a temperature of certain (generally at least 750 DEG C),
Normal atmosphere pressure, the TSP cutter will not rupture or be graphitized, but do not leach under similar conditions PDC cutter will rupture or
Graphitization.Needing for TSP diamond table to be re-attached to new substrate, (original substrate for forming polycrystalline diamond above is usually being soaked
It is removed or is destroyed in leaching processes before analysis process) to form TSP cutter.
Therefore, leaching can solve the problems, such as some caused by the residual sintering aid in the diamond table as PCD, but simultaneously,
It can leaching sintering aid once where position leave hole or cavity, this can be for example by making PDC cutter become fragile simultaneously
It reduces its impact flexibility and deteriorates the mechanical property of PDC cutter.
Detailed description of the invention
It can be by reference to obtaining below in conjunction with description made by attached drawing to the more complete of embodiment of the present invention and its advantage
Understand, attached drawing shows the specific embodiment of the disclosure, and similar label refers to like in the accompanying drawings, and in the accompanying drawings:
Fig. 1 is the diagrammatic cross-section of the sintered components for PDC cutter being not drawn on scale；
Fig. 2 is the diagrammatic cross-section of the sintered components for PDC cutter during sintering being not drawn on scale；
Fig. 3 is the diagrammatic cross-section being not drawn on scale in the PDC of PDC cutter form；And
Fig. 4 be include in PDC cutter form at least one PDC earth-boring bits.
Specific embodiment
The present invention relates to a kind of compound formed comprising sintering aid compound, by the sintering aid compound or it
Mixture PDC, and using sintering aid compound formed PDC method.The sintering aid compound includes to burn
Tie adjuvant component and non-sintered component.The sintering aid compound have compared with not being compounded sintering aid it is lower linear or
Volume CT E or both makes its linear or Volume CT E or both closer to the linear or Volume CT E or both of diamond, thus
The negative effect of different linear or Volume CT E of diamond and sintering aid or both is reduced, such as PDC cutter is being drilled
And/or the rupture during the actual use in down-hole application.
In addition, the sintering aid compound has certain dissociation constant, so that the sintering aid component is pressed in HTHP
To be enough to be catalyzed the amount and the dissociation of sintering aid compound that diamond-diamond key is formed during condition processed.However, the dissociation
Constant is but also the sintering aid is remained substantially within during PDC use in the sintering aid compound, and is made
It will not be to be enough to cause the significant graphitization of the polycrystalline diamond platform or since it is online with diamond phase ratio under the conditions of
Property or Volume CT E or both on difference caused by substantial damage amount dissociation.This allows the PDC to benefit from the sintering
Lower linear or Volume CT E of auxiliary compound or both and its following ability: first still with the burning of enough dissociation
Auxiliary agent is tied to keep the sintering aid in the form of not making diamond graphitization while forming polycrystalline diamond platform.
In addition, remaining sintering aid compound or the derivative compound formed by it can be retained in the described poly- of the PDC
In diamond platform and provide mechanical support.Derivative compound generally also has the line compared with sintering aid closer to diamond
The linear or Volume CT E or both of property or Volume CT E or both.
With reference to Fig. 1, sintered components 10 include tank 20, and the tank 20 accommodates substrate 30, diamond crystals 40 and sintering aid
Compound 50.As shown in Fig. 2, some sintering aid compounds 50 are dissociated into the sintering of dissociation when tank 20 is subjected to HTHP process
Auxiliary agent 60, the sintering aid 60 of the dissociation are catalyzed diamond-diamond key between diamond crystals 40.The sintering of dissociation helps
Agent 60 can also be catalyzed diamond-substrate key between diamond crystals 40 and substrate 30.Sintering aid compound 50 also forms solution
From non-sintered component 70, the non-sintered component 70 of the dissociation can further react to form derivative compound 80.
After HTHP process, polycrystalline diamond platform 90 as shown in Figure 3 is formed in substrate 30, to generate PDC
100.PDC 100 includes sintering aid compound 50.PDC 100 also may include (such as it is a small amount of, such as less than 0.5 weight %
, less than 0.1 weight %'s or less than 0.01 weight %'s) sintering aid 60 of dissociation or it can not include it is any significant
The sintering aid 60 of any dissociation of amount.The sintering aid 60 of dissociation can by X-ray diffraction or other phase analysis techniques come
Detection.
PDC 100 also may include the non-sintered component 70 of the dissociation of sintering aid compound 50 or by the non-of the dissociation
It is sintered the derivative compound 80 that component is formed.Although Fig. 3 shows the non-sintered component 70 with sintering aid compound 50, dissociation
With the PDC 100 of derivative compound 80, but PDC 100 can have only a kind of or only two kinds of such components.Such as, in some instances it may even be possible to institute
There is sintering aid compound 50 that will all dissociate during HTHP process, and by the non-sintered component 70 for being only left dissociation or derives
Compound 80.As indicated above, the sintering aid 60 of a small amount of dissociation can be also left.
PDC 100 can be employed without as former state be subjected to leaching or any other process come remove dissociation sintering aid 60 or
Sintering aid compound 50 (alternatively, non-sintered component 70 or derivative compound 80 (if present) of dissociation).PDC 100
It may include TSP.
Substrate 30 can be suitable for any substrate used in PDC 100.Particularly, it can be conventional substrate,
Such as hard tungsten carbide substrate.Conventional PDC formed in substrate generally comprise sintering aid and will be described during HTPT process
Sintering aid is supplied to diamond crystals.PDC 100 is formed using sintering aid compound 50, so that not needing to have in substrate 30
Sintering aid.In some cases, in substrate 30 there is sintering aid to be in practice likely to be harmful, because sintering aid will
Moved to during HTHP process in polycrystalline diamond platform 90 and cause with routine PDC in identical adverse effect, unless via
Leaching removes sintering aid.Therefore, substrate 30 can lack any sintering aid.So substrate 30 can be by not needing substrate 30
In have a sintering aid 60 to form substrate 30 such as during HTHP process, keep complete or come and polycrystalline diamond platform
The material of 90 bondings is formed.
Although Fig. 1 to Fig. 3 shows the PDC with substrate 30, can also be formed in the case where no substrate 30 according to this
Disclosed PDC.Substrate can be attached to the PDC being thusly-formed later, if necessary.
Diamond crystals 40 can be any suitable diamond crystals, is included in after polycrystalline diamond platform 90 is formed and is located at
In the different zones of polycrystalline diamond platform 90 with the substantially diamond crystals of even grained size, have mixing crystal grain it is big
Small diamond crystals or their mixture.
Sintering aid compound 50 may include any suitable sintering aid group for being capable of forming the sintering aid 60 of dissociation
Divide and formed another element or one group of element of the non-sintered component 70 dissociated.The sintering aid 60 of dissociation may include VIII group gold
Belong to.The sintering aid 60 of dissociation may also include cobalt (Co), nickel (Ni), iron (Fe), copper (Cu), chromium (Cr), manganese (Mn), ruthenium (Ru),
Rhodium (Rh), platinum (Pt), tantalum (Ta), osmium (Os) or iridium (Ir).The sintering aid 60 of dissociation can be single metal or it can be with
It is the combination of the metal formed by different sintering aid compounds 50, a kind of corresponding metal of every kind of sintering aid compound 50.Gold
The combination of category can individually work or they can alloying to form the sintering aid 60 of the dissociation of alloying.
Sintering aid compound 50 may include the combination of a kind of compound or compound.For example, even if one kind is used only
In the case where the sintering aid 60 of dissociation, it can also be from a variety of different compound dissociation of the sintering aid.It is described it is a variety of not
With compound can start when add, or can before sintering, during or after formed.Transition metal can be with a variety of valence states
In the presence of, therefore even if being compounded with identity element or with some elements, transition metal is also especially likely to form one group of chemical combination
Object.
In addition, as indicated above, the sintering aid 60 of dissociation can be by the metal that is formed from different sintering aid compounds
Combination formed, in the case, sintering aid compound 50 also include compound combination.
Although sintering aid compound 50 is discussed as electroneutral compound herein, it can make in some cases
For the presence of pairs of ion.
Every kind of individual compounds in sintering aid compound 50 can have formula M1 xM2 yQp, wherein M1It is VIII group gold
The group of category or Co, Ni, Fe, Cu, Cr, Mn, Ru, Rh, Pt, Ta, Os or Is sintering aid or at least two this metalloids
It closes, and x > 0；M2It is the combination of non-sintering metal or at least two such non-sintered metals, and y >=0；And Q is non-gold
Category, metalloid or at least two nonmetallic or metalloid combinations, and p > 0.X, y and p is but also sintering aid compound
50 be electroneutral.M1 xM2 yQpDissociation is by M1Form the sintering aid 60 of dissociation and by M2 yQpForm non-sintered group of dissociation
Divide 70.General dissociation reaction (I) is as follows:
M1It usually will be the metal in neutral valence state.M2The relative quantity of element in Q usually will be so that compound be also electricity
Neutral.
M2The further reaction of Q can continue to form derivative compound 80 further to react, such as by reacting as follows
(II) shown in:
M2X and Q will make compound be that electroneutral or element are in wherein sexual valence state.X can be carbon (C), such as
Another component of carbon or polycrystalline diamond platform in diamond crystals 40.
Alternatively, M2The further reaction that Q forms derivative compound 80 can be shown by reacting (III) as follows:
M2It usually will be the metal in neutral valence state.The relative quantity of element in QX usually will be so that material be also in electricity
Property.
In an example, sintering aid compound 50 can be cobalt titanate (II) (CoTiO3), conduct can be dissociated into
The TiO of the Co of the sintering aid 60 of dissociation and the non-sintered component 70 as dissociation2.In addition, the non-sintered component 70 of dissociation can
It is further reacted with C included in diamond crystals 40, to form the titanium carbide (TiC) as derivative compound 80.
In general, derivative compound 80 usually can be metal carbides because these materials tend to have it is similar
In substrate 30 CTE and than sintering aid closer to the linear or Volume CT E of CTE or both of diamond.In addition, metal carbon
Compound tends to have desired impact strength, to assign the whole additional impact toughness of PDC 100.
Particularly useful M2Metal include titanium (Ti), zirconium (Zr), tungsten (W), tantalum (Ta), molybdenum (Mo), vanadium (V), niobium (Nb) and
Hafnium (Hf), because these metals can form carbide.
Oxygen (O) is particularly useful Q element, because it, which can be formed, can leave PDC 100 and comparatively safe oxygen
(O2).Carbon-oxygen (C-O) compound and ion (such as carbonate) or silicon-oxygen (Si-O) compound and ion (such as silicate)
Since they form O2Ability or form CO in the case where carbon-oxygen compound and ion2(it can also leave PDC 100)
Ability and generate the ability of C or Si or their compound in PDC 100 and be also possible to particularly useful Q component.
Sintering aid compound 50 can have 5x10 at 20 DEG C-6/ K or smaller, 3x10-6/ K or smaller or 2x10-6/
The linear CTE of K or smaller.Non-sintered compound 70 can have 5x10 at 20 DEG C-6/ K or smaller, 3x10-6/ K or smaller or
Person 2x10-6The linear CTE of/K or smaller.Derivative compound 80 can have 5x10 at 20 DEG C-6/ K or smaller, 3x10-6/ K or more
Small or 2x10-6The linear CTE of/K or smaller.
Sintering aid compound 50 can have 8x10 at 20 DEG C-6/ K or smaller, 6x10-6/ K or smaller or 4x10-6/
The linear CTE of K or smaller.Non-sintered compound 70 can have 8x10 at 20 DEG C-6/ K or smaller, 6x10-6/ K or smaller or
Person 4x10-6The linear CTE of/K or smaller.Derivative compound 80 can have 8x10 at 20 DEG C-6/ K or smaller, 6x10-6/ K or more
Small or 4x10-6The linear CTE of/K or smaller.
The disclosure also provides a kind of method for forming such as PDC of PDC 100.According to the method, by diamond crystals
40 and sintering aid compound 50 be placed in tank 20, as shown in Figure 1.Sintering aid compound 50 can be in the form of particle, institute
Stating particle has the average full-size between 1 μm and 1000 μm.Sintering aid compound 50 can also be in the shape of nano particle
Formula, the nano particle have the average full-size between 1nm and 1000nm.Particularly, sintering aid compound 50 can
With the full-size between 200nm and 5 μm.In addition, sintering aid compound 50 can be it is monodispersed, it is maximum sized
Mean size variation is 10% or smaller.
Sintering aid compound 50 is mixed with diamond crystals 40, as shown in Figure 1.The mixing can be homogeneous, or
Sintering aid compound 50 can have more at high proportion person in some regions.The formation of homogeneous mixture can by using size with
Diamond crystals 40 similar 50 particles of sintering aid compound promotes.For example, sintering aid particle can have in diamond
Average largest dimension within the 5% of the average largest dimension of crystal grain 40.
Sintering aid compound 50 can be formed as particle by the mechanical treatment of such as ball milling.Sintering aid compound
It is formed as discrete particle rather than agglomerate or agglomeration, the particle for being physically attached to another particle is no more than 1%.Discrete particle
Also promote to form homogeneous mixture with diamond crystals 40.
During HTHP process, some sintering aids 60 for being dissociated into dissociation in sintering aid compound 50, such as Fig. 2 institute
Show.The sintering aid 60 of dissociation has been located near diamond crystals 40.Therefore, the less sintering than in conventional process can be used to help
Agent, or HTHP compacting circulation time is reduced to improve productivity, wherein sintering aid generally has to move to Buddha's warrior attendant from substrate
In stone crystal grain.It is especially true when sintering aid compound 50 is in the particle form mixed in heterogeneity with diamond crystals 40.It burns
Knot auxiliary compound 50 amount can make sintering aid component (such as Co) total amount (either dissociate or in compound
In) it is less than 10 weight % of polycrystalline diamond platform 90.It is also smaller than 8 weight %, less than 4.5 weight %, less than 3 weights
Measure %, less than 2 weight % or less than 1 weight %.
The temperature of HTHP process is typically at least the eutectic temperature of sintering aid component in sintering aid compound 50, so that
The sintering aid 60 of dispersion is in liquid.If the sintering aid 60 of dispersion is formed by alloy, the temperature of HTHP process can be extremely
It is applicable alloying temperature less, is typically at least the eutectic temperature with the alloy compositions of highest eutectic temperature.
Non-sintered adjuvant component 70 can also be formed during HTHP process.Derivative compound 80 can during HTHP process or
It is formed after the process is completed and polycrystalline diamond platform 90 is cooling.
Whole process generates PDC 100, such as above shown in fig. 3.
PDC as described herein may be incorporated into the commercial plant of such as earth-boring bits, as shown in Figure 4.Fig. 4 is shown containing connection
It is connected to the fixed cutter drill bits 200 of multiple cutters 210 of bit body 220.At least one of cutter 210 can be such as Fig. 3 institute
The PDC 100 shown.
Bit body 220 may include multiple blades 230 extending therefrom.Bit body 220 can be by steel, steel alloy, basis material
Or it is formed with the suitable bit body material of other of desired intensity, toughness and machining property.Bit body 220 can be by shape
As with desired wear-resistant property and corrosion resistance characteristic.PDC cutter 210 can be used disclosed method or use its other party
Method is mounted on drill bit.PDC cutter can be located in gage areas (gage region) 240, or be located in non-gage areas,
Or it is located in the two.
With the associated probing of drill bit 200 movement can bit body 220 in response to the rotation of associated drill string and relative to
When the bottom of pit shaft rotates.At least some PDC cutters 210 being arranged on associated blade 230 can connect during probing
Touch the adjacent part of down-hole formation.These PDC cutters 210 may be oriented so that their polycrystalline diamond platform contact stratum.
The disclosure provides embodiment A, is related to a kind of PDC, and the PDC includes substrate and polycrystalline diamond platform, described
Polycrystalline diamond platform include sintering aid compound, the non-sintered adjuvant component of dissociation, derivative compound or their mixture,
And the sintering aid of dissociation.
The disclosure also provides embodiment B, is related to described in a kind of embodiment A containing bit body and in cutter form
PDC earth-boring bits.
The disclosure also provides embodiment C, is related to a kind of method for forming PDC, which comprises by substrate and gold
The mixture of hard rock crystal grain and sintering aid compound is placed in tank to form sintered components；And the sintered components are held
Row HTHP process is to form PDC, and the PDC includes substrate and polycrystalline diamond platform, and the polycrystalline diamond platform is by the Buddha's warrior attendant
Stone crystal grain and the sintering aid compound are formed, and include the non-sintered auxiliary agent group of the sintering aid compound, dissociation
Point, derivative compound or their mixture, and the sintering aid also comprising dissociation.
In addition, embodiment A, B and C are used in combination with following additional elements, (these additional elements can also be combined with each other, and be removed
It is non-obvious mutually exclusive, and method element can be used for obtaining device and device element may be from method): the i) substrate
Sintering aid can not included；Ii) the sintering aid compound may include sintering aid component M1With non-sintered adjuvant component M2Q
And there is formula M1 xM2 yQp, wherein M1It is group VIII metal,
M2It is except M1Except metal, Q is nonmetallic, metalloid or at least two nonmetallic or metalloid combinations, x
> 0, y >=0, p > 0, and x, y and p make the sintering aid compound be electroneutral；Iii) derivative compound can
It is formed by the non-sintered adjuvant component of the dissociation；Iv) derivative compound can be metal carbides；V) sintering helps
Immunomodulator compounds, the non-sintered adjuvant component of the dissociation and the derivative compound can have 5x10-6The linear heat of/K or smaller
The coefficient of expansion (CTE)；Vi) the sintering aid compound can be in granular form；Vii) diamond crystals and the sintering
The mixture of auxiliary compound can be homogeneous；Viii) the sintering aid compound particle can have in the gold
Average largest dimension within the 5% of the average largest dimension of hard rock crystal grain；Ix) the sintering aid compound can be in HTHP mistake
Sintering aid component and non-sintered component are dissociated into during journey so that diamond crystals described in the sintering aid catalytic it
Between the formation of diamond-diamond key；X) the sintering aid compound may include at least two compounds；Xi described in) extremely
Each in few two kinds of compounds may include identical sintering aid；Xii) each at least two compound can
Comprising different sintering aids, and the sintering aid can form alloy during the HTHP process；Xiii) the dissociation
Non-sintered component can be reacted with carbon to form metal carbides derivative compound；Xiv) it is brilliant to may be from the diamond for the carbon
Diamond in grain.
Although exemplary implementation scheme of the invention only has been described in detail above, it is to be understood that of the invention not departing from
In the case where spirit and desired extent, the modifications and variations of these examples are possible.For example, can come by reference to drill bit example
Determine use of the PDC on other commercial plants.
Claims (20)
1. a kind of composite polycrystal-diamond (PDC), the PDC include:
Substrate；And
Polycrystalline diamond platform, the polycrystalline diamond platform include sintering aid compound, the non-sintered adjuvant component of dissociation, derivative
Compound or their mixture, and the sintering aid also comprising dissociation.
2. PDC as described in claim 1, wherein the substrate does not include sintering aid.
3. PDC as described in claim 1, wherein the sintering aid compound includes sintering aid component M1It is helped with non-sintered
Agent component M2Q, and there is formula M1 xM2 yQp, wherein
M1It is group VIII metal,
M2It is metal,
Q is nonmetallic, metalloid or at least two nonmetallic or metalloid combinations,
X > 0,
Y >=0, p > 0, and
X, y and p makes the sintering aid compound be electroneutral.
4. PDC as described in claim 1, wherein the derivative compound is formed by the non-sintered adjuvant component of the dissociation.
5. PDC as described in claim 1, wherein the derivative compound is metal carbides.
6. PDC as described in claim 1, wherein the sintering aid compound, the dissociation non-sintered adjuvant component and
Each of described derivative compound has 5x10-6/ K or smaller thermal linear expansion coefficient (CTE).
7. a kind of earth-boring bits, the earth-boring bits include:
Bit body；And
Composite polycrystal-diamond (PDC), in the form of cutter, the PDC includes: the PDC
Substrate；And
Polycrystalline diamond platform, the polycrystalline diamond platform include sintering aid compound, the non-sintered adjuvant component of dissociation, derivative
Compound or their mixture, and the sintering aid also comprising dissociation.
8. earth-boring bits as described in claim 1, wherein the substrate does not include sintering aid.
9. earth-boring bits as described in claim 1, wherein the sintering aid compound includes sintering aid component M1With non-burning
Tie adjuvant component M2Q, and there is formula M1 xM2 yQp, wherein
M1It is group VIII metal,
M2It is except M1Except metal,
Q is nonmetallic, metalloid or at least two nonmetallic or metalloid combinations,
X > 0,
Y >=0, p > 0, and
X, y and p makes the sintering aid compound be electroneutral.
10. earth-boring bits as described in claim 1, wherein non-sintered adjuvant component of the derivative compound by the dissociation
It is formed.
11. earth-boring bits as described in claim 1, wherein the derivative compound is metal carbides.
12. earth-boring bits as described in claim 1, wherein the non-sintered auxiliary agent of the sintering aid compound, the dissociation
Each of component and the derivative compound have 5x10-6/ K or smaller thermal linear expansion coefficient (CTE).
13. a kind of method for forming composite polycrystal-diamond (PDC), which comprises
The mixture of substrate and diamond crystals and sintering aid compound is placed in tank to form sintered components；And
High temperature and pressure (HTHP) process is executed to the sintered components to form PDC, the PDC includes the substrate and plycrystalline diamond gold
Hard rock platform, the polycrystalline diamond platform are formed by the diamond crystals and the sintering aid compound, and include described
Sintering aid compound, the non-sintered adjuvant component of dissociation, derivative compound or their mixture, and also comprising dissociation
Sintering aid.
14. method as claimed in claim 13, wherein the sintering aid compound is in granular form, and the diamond
The mixture of crystal grain and the sintering aid compound is homogeneous.
15. method as claimed in claim 13, wherein the sintering aid compound is in granular form, the particle has
Average largest dimension within the 5% of the average largest dimension of the diamond crystals.
16. method as claimed in claim 13, wherein the sintering aid compound is dissociated into during the HTHP process
Sintering aid component and non-sintered component, so that the diamond-between diamond crystals described in the sintering aid catalytic
The formation of diamond key.
17. method as claimed in claim 13, wherein the sintering aid compound includes at least two compounds.
18. method as claimed in claim 17, wherein each at least two compound includes identical sintering
Auxiliary agent.
19. method as claimed in claim 17, wherein each at least two compound includes different sintering
Auxiliary agent, and wherein the sintering aid forms alloy during the HTHP process.
20. method as claimed in claim 13, wherein the non-sintered component of the dissociation is reacted with carbon to form metallic carbide
Object derivative compound.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2016/058979 WO2018080490A1 (en) | 2016-10-27 | 2016-10-27 | Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109890540A true CN109890540A (en) | 2019-06-14 |
Family
ID=62025335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680089647.3A Withdrawn CN109890540A (en) | 2016-10-27 | 2016-10-27 | Composite polycrystal-diamond with sintering aid compound, the compound or their mixture that are formed by sintering aid compound |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20200139443A1 (en) |
| CN (1) | CN109890540A (en) |
| CA (1) | CA3038035A1 (en) |
| GB (1) | GB2568443A (en) |
| WO (1) | WO2018080490A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8789627B1 (en) * | 2005-07-17 | 2014-07-29 | Us Synthetic Corporation | Polycrystalline diamond cutter with improved abrasion and impact resistance and method of making the same |
| US8080071B1 (en) * | 2008-03-03 | 2011-12-20 | Us Synthetic Corporation | Polycrystalline diamond compact, methods of fabricating same, and applications therefor |
| BRPI1007389A2 (en) * | 2009-01-16 | 2016-02-16 | Baker Hugues Inc | methods of forming polycrystalline diamond cutting elements, thus formed cutting elements and thus equipped drill bits |
| WO2012009285A1 (en) * | 2010-07-14 | 2012-01-19 | Varel International Ind., L.P. | Alloys with low coefficient of thermal expansion as pdc catalysts and binders |
| US8771391B2 (en) * | 2011-02-22 | 2014-07-08 | Baker Hughes Incorporated | Methods of forming polycrystalline compacts |
-
2016
- 2016-10-27 CA CA3038035A patent/CA3038035A1/en not_active Abandoned
- 2016-10-27 CN CN201680089647.3A patent/CN109890540A/en not_active Withdrawn
- 2016-10-27 US US16/335,792 patent/US20200139443A1/en not_active Abandoned
- 2016-10-27 WO PCT/US2016/058979 patent/WO2018080490A1/en active Application Filing
- 2016-10-27 GB GB1903903.1A patent/GB2568443A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB201903903D0 (en) | 2019-05-08 |
| WO2018080490A1 (en) | 2018-05-03 |
| US20200139443A1 (en) | 2020-05-07 |
| GB2568443A (en) | 2019-05-15 |
| CA3038035A1 (en) | 2018-05-03 |
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