CN109885856B - Photovoltaic module hot spot power loss calculation method based on I-V curve - Google Patents

Photovoltaic module hot spot power loss calculation method based on I-V curve Download PDF

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CN109885856B
CN109885856B CN201811559573.2A CN201811559573A CN109885856B CN 109885856 B CN109885856 B CN 109885856B CN 201811559573 A CN201811559573 A CN 201811559573A CN 109885856 B CN109885856 B CN 109885856B
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photovoltaic module
power loss
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马铭遥
刘恒
李飞
张志祥
凌峰
张兴
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Hefei University of Technology
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Abstract

The invention discloses a photovoltaic module hot spot power loss calculation method based on an I-V curve, which comprises the steps of firstly extracting an I-V output characteristic curve of a photovoltaic module, reading the working current and the working voltage of the module, and calculating the reverse bias power loss of a hot spot battery by analyzing the I-V curve; then calculating the photoelectric conversion efficiency of the photovoltaic module and testing the maximum value of the maximum output power of the photovoltaic module in the string to calculate the photoelectric conversion power loss of the hotspot cell; the sum of the two is the total power loss of the hot spot. The method can accurately calculate the hot spot power loss of the photovoltaic module, has the advantages of real-time performance, economy, quickness, suitability for arrays of various scales and the like, and the calculation result can be used for evaluating the severity of the hot spots and improving the safety and reliability of a photovoltaic system.

Description

Photovoltaic module hot spot power loss calculation method based on I-V curve
Technical Field
The invention relates to a power loss calculation method, in particular to a photovoltaic module hot spot power loss calculation method based on an I-V curve, and belongs to the technical field of photovoltaic modules.
Background
With the development of the photovoltaic industry and the long-term investment and operation of the photovoltaic system, various failure problems of the photovoltaic module are gradually exposed. Hot spots due to power mismatch between cells caused by shadow masking, foreign object coverage, or battery defects are the most common component failures. Hot spots not only cause power loss in the components, but in severe cases burn through the components causing serious fires. In order to reduce the damage caused by hot spot failure and avoid fire caused by battery heating, hot spot detection and hot spot severity evaluation of the running components are required periodically.
The document "Kim ka, Seo G S, Cho B H, et al, photovoltaic hot-spot detection for solar panel substrate using AC parameter characterization", IEEE Transactions on Power Electronics, 2016,31(2): 1121-1130. ("solar panel photovoltaic hot spot detection based on AC parameter characteristics", "IEEE proceedings-Power Electronics, 2016, volume 31, pages 2, 1121-1130, 2016) shows a method for detecting a module hot spot by measuring the AC impedance of a photovoltaic module, but this method requires the injection of an AC current into the module, and is difficult to detect online during normal operation in a string of modules.
The documents "Experimental observations on hot-spots and derived access/emission criteria", the "solar Energy", 2015,118: 28-40 "(" Experimental observations of hot spots and proposed acceptance/rejection criteria ", the" solar Energy ", vol. 118, pages 28-40", 2015) propose a method for assessing the severity of hot spots by power loss, but the power loss is calculated by the reduction of the operating voltage of the components with respect to the operating voltage of the non-faulty components in the same series. The method does not consider the influence of the working current change on the power loss, the calculated value is not accurate, and the method is limited to the existence of fault components in the string.
The Chinese patent 'infrared image processing-based photovoltaic array hot spot rapid detection system and method' (publication number: CN105720917A) discloses a method for detecting a photovoltaic module hot spot through infrared image processing, but the method consumes a long time and reduces the precision for a large-scale photovoltaic array, and the detection cost is high.
The Chinese patent 'a photovoltaic module hot spot temperature calculation method' (publication number: CN106066916A) proposes a method for estimating the temperature of a hot spot battery through a thermal simulation model, the hot spot power loss calculation mentioned in the method does not include photoelectric conversion power loss, and a parameter determination mode in a calculation formula is not given.
Disclosure of Invention
The invention aims to provide a photovoltaic module hot spot power loss calculation method based on an I-V curve, which can efficiently, economically and quickly calculate the power loss of a module hot spot, evaluate the severity of the module hot spot and improve the safety and reliability of the operation of a photovoltaic system.
In order to achieve the purpose, the invention provides a photovoltaic module hot spot power loss calculation method based on an I-V curve, the photovoltaic module related to the calculation method is one of photovoltaic group strings, the photovoltaic group string is formed by connecting n photovoltaic modules with the same structure in series, and each photovoltaic module is formed by connecting three sub-strings with the same structure in seriesEach sub-string comprising ncellA battery plate and a bypass diode, ncellThe battery pieces are connected in parallel with the bypass diode after being connected in series, wherein ncellIs a positive integer;
the photovoltaic module hot spot power loss calculation method based on the I-V curve comprises the following steps:
step 1, calculating reverse bias power loss P of hot spot batteryrThe method specifically comprises the following steps:
step 1.1, reading the working current I of the photovoltaic module on a module optimizermAnd operating voltage Um；
Step 1.2, extracting an I-V output characteristic curve of the photovoltaic module through a module optimizer with an I-V scanning function;
step 1.3, analyzing the I-V output characteristic curve obtained in step 1, and making the following judgment:
if no step is formed on the curve, the photovoltaic module has no hot spot, and the reverse bias power loss P of a hot spot battery is not neededrCalculating;
if a step is arranged on the curve, a substring of the photovoltaic module has a hot spot, the step is marked as a step 1, and the reverse bias power loss of a hot spot battery of the substring is marked as Pr1And go to step 1.4;
if two steps are arranged on the curve, the photovoltaic module has two sub-strings with hot spots, the two steps are respectively marked as step 2 and step 3, and the reverse bias power losses of the hot spot batteries of the two sub-strings are respectively marked as Pr2And Pr3And go to step 1.5;
step 1.4, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocVoltage value U at two end points of step 1 interval11、U12Current value I at two end points between step 1 and step11、I12Wherein U is11＞U12；
If Im＜I11,Pr1＝0；
If I11≤Im＜I12,Pr1＝(U11-Um)×Im；
If Im≥I12，
Figure BDA0001912871880000031
Step 1.5, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocAnd voltage values U at two end points of step 2 interval21、U22And the current value I at two end points of the interval 221、I22Voltage value U at two end points of step 3 interval31、U32And the current value I at two end points of the step 3 interval31、I32Wherein U is21＞U22＞U31＞U32；
If Im＜I21,Pr2＝0、Pr3＝0；
If I21≤Im＜I22,Pr2＝(U21-Um)×Im、Pr3＝0；
If I22≤Im＜I31,
Figure BDA0001912871880000032
Pr3＝0；
If I31≤Im＜I32，
Figure BDA0001912871880000033
Pr3＝(U31-Um)×Im；
If Im≥I32,
Figure BDA0001912871880000041
Step 2, calculating the photoelectric conversion power loss P of the hotspot cellsunThe method specifically comprises the following steps:
step 2.1, reading rated maximum output power P from a photovoltaic module nameplatemMeasuring the photovoltaicThe specification of the component battery piece; recording the length of the cell as a and the width of the cell as b, and calculating the photoelectric conversion efficiency eta of the photovoltaic module according to the following calculation formula:
Figure BDA0001912871880000042
step 2.2, reading and comparing the actual maximum output power of n photovoltaic modules in the photovoltaic group string through the module optimizer, and recording the maximum value as the reference maximum output power P of the photovoltaic modulesm a maxThen the loss P of photoelectric conversion power of the hot spot cellsunIs calculated as follows:
Figure BDA0001912871880000043
step 3, calculating the total power loss P of the hot spots of the photovoltaic modulehot；
If the I-V output characteristic curve of the photovoltaic module has no steps, the total power loss P of hot spots of the photovoltaic modulehot＝Psun；
If the I-V output characteristic curve of the photovoltaic module has a step, the photovoltaic module has a substring with hot spots, and the total power loss of the hot spots of the substring is recorded as Phot1Total power loss of hot spot P of photovoltaic modulehot＝Phot1Wherein, Phot1＝Pr1+Psun；
If the I-V output characteristic curve of the photovoltaic module has two steps, the photovoltaic module has two sub-strings with hot spots, and the total power loss of the hot spots of the two sub-strings is respectively marked as Phot2、Phot3Total power loss P of hot spot of photovoltaic modulehot＝Phot2+Phot3Wherein P ishot2＝Pr2+Psun，Phot3＝Pr3+Psun。
Compared with the prior art, the invention has the beneficial effects that:
1. the hot spot power loss of the photovoltaic module can be accurately calculated without adding a fault-free module for comparison;
2. the hot spot detection method can be used for real-time online calculation and hot spot detection;
3. the method can be applied to photovoltaic arrays of various scales and sizes, and is economical and rapid;
4. the calculation result can be used for evaluating the severity of the hot spots and improving the safety and reliability of the photovoltaic system.
Drawings
Fig. 1 is a schematic structural diagram of a photovoltaic module according to the present invention.
Fig. 2 is a diagram illustrating a reason why the I-V curve of the photovoltaic module according to the present invention has a step.
Fig. 3 is a diagram illustrating a reason why the I-V curve of the photovoltaic module according to the present invention has two steps.
FIG. 4 is a schematic diagram of the calculation of reverse bias power loss of the hotspot cell when the I-V curve of the photovoltaic module has a step in the calculation method of hotspot power loss of the photovoltaic module based on the I-V curve.
FIG. 5 is a schematic diagram of the calculation of reverse bias power loss of a hotspot cell when the I-V curve of the photovoltaic module has two steps in the calculation method of hotspot power loss of the photovoltaic module based on the I-V curve provided by the invention.
Fig. 6 is a corresponding flow chart of hot spot battery reverse bias power loss calculation in the photovoltaic module hot spot power loss calculation method based on the I-V curve provided by the invention.
Fig. 7 is a general flowchart of a photovoltaic module hotspot power loss calculation method based on an I-V curve according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
A photovoltaic module hot spot power loss calculation method based on an I-V curve relates to a photovoltaic module which is one of photovoltaic group strings, the photovoltaic group strings are formed by connecting n photovoltaic modules with the same structure in series, and the structure of each photovoltaic module is shown in figure 1, and the specific description is as follows: each photovoltaic module is formed by connecting three substrings with the same structure in series, and each substring comprises ncellA battery piece anda bypass diode, ncellThe battery pieces are connected in parallel with the bypass diode after being connected in series, wherein ncellIs a positive integer. In the present embodiment, ncell＝20。
Fig. 7 is a general flowchart of a photovoltaic module hotspot power loss calculation method based on an I-V curve according to the present invention. As can be seen from the figure, the photovoltaic module hot spot power loss calculation method based on the I-V curve comprises the following steps:
step 1, calculating reverse bias power loss P of hot spot batteryr。
Fig. 6 is a corresponding flow chart of hot spot battery reverse bias power loss calculation in the photovoltaic module hot spot power loss calculation method based on the I-V curve provided by the invention. As can be seen from the figure, the method specifically comprises the following steps:
step 1.1, reading the working current I of the photovoltaic module on a module optimizermAnd operating voltage Um。
And 1.2, extracting an I-V output characteristic curve of the photovoltaic module by using a module optimizer with an I-V scanning function. Operating current I of photovoltaic modulemAnd an operating voltage VmThe tracking function of the maximum power point of the string inverter is controlled and obtained under the combined action of all photovoltaic modules in the whole string according to the I-V characteristic relation on the bus.
And step 1.3, analyzing the I-V output characteristic curve obtained in the step 1 and making the following judgment.
If no step is formed on the curve, the photovoltaic module has no hot spot, and the reverse bias power loss P of a hot spot battery is not neededrCalculating;
if a step is arranged on the curve, a substring of the photovoltaic module has a hot spot, the step is marked as a step 1, and the reverse bias power loss of a hot spot battery of the substring is marked as Pr1And go to step 1.4;
if two steps are arranged on the curve, the photovoltaic module has two sub-strings with hot spots, the two steps are respectively marked as step 2 and step 3, and the reverse bias power losses of the hot spot batteries of the two sub-strings are respectively marked as Pr2And Pr3And is combined withGo to step 1.5.
As shown in fig. 2, if a hot spot cell occurs in the photovoltaic module, the power mismatch occurs between the hot spot cell and the normal cell, and the power mismatch is larger than the short-circuit current I of the hot spot cellhot scOperating current ofmUnder the action of the voltage source, the voltage source is in a reverse bias state and bears reverse bias voltage VrAnd the normal cell terminal voltage is a forward voltage VniAt a reverse bias voltage VrUnder the action of the current I, the reverse bias leakage current is generatedlcWhen the current flows through the hot spot cell, the total current flowing through the hot spot cell is Ihot sc+Ilc. In the sub-string where the hot spot cell is located, for the photovoltaic module structure shown in fig. 1, when | Vr|-19×VniWhen the voltage is more than or equal to 0.7V, a bypass diode connected with the sub-string in parallel is conducted, and the current flowing in the sub-string is kept at Ihot sc+IlcWhen the redundant current flows through the bypass diode, the operating voltage of the photovoltaic module becomes 2/3 under the condition of no hot spot; if | Vr|-19×VniIf the voltage is less than 0.7V, the diode is turned off, and the current flowing in the sub-string at the moment is the working current Im(ii) a If the working current is smaller than the short-circuit current of the hot spot cell, the hot spot cell does not bear reverse bias voltage any more, the working voltage of the photovoltaic module is the same as that under the condition of no hot spot, and therefore a step appears on the I-V output characteristic curve of the photovoltaic module. As shown in fig. 3, when two sub-strings in the photovoltaic module have hot spot cells, similarly, when the magnitude relationship between the working current and the short-circuit current of the two hot spot cells is different, the bypass diodes connected in parallel with the two sub-strings are sequentially turned on or off, so that two steps appear on the I-V output characteristic curve of the photovoltaic module.
Step 1.4, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocVoltage value U at two end points of step 1 interval11、U12And the current values I at two end points of the interval of step 111、I12Wherein U is11＞U12；
If Im＜I11,Pr1＝0；
If I11≤Im＜I12,Pr1＝(U11-Um)×Im；
If Im≥I12，
Figure BDA0001912871880000071
FIG. 4 is a schematic diagram of the calculation of reverse bias power loss of the hotspot cell when the I-V curve of the photovoltaic module has a step in the calculation method of hotspot power loss of the photovoltaic module based on the I-V curve.
Step 1.5, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocVoltage value U at two end points of step 2 interval21、U22And the current value I at two end points of the step 2 interval21、I22Voltage value U at two end points of step 3 interval31、U32And the current value I at two end points of the interval 331、I32Wherein U is21＞U22＞U31＞U32。
If Im＜I21,Pr2＝0、Pr3＝0；
If I21≤Im＜I22,Pr2＝(U21-Um)×Im、Pr3＝0；
If I22≤Im＜I31,
Figure BDA0001912871880000081
Pr3＝0；
If I31≤Im＜I32，
Figure BDA0001912871880000082
Pr3＝(U31-Um)×Im；
If Im≥I32,
Figure BDA0001912871880000083
FIG. 5 is a schematic diagram of the calculation of reverse bias power loss of a hotspot cell when the I-V curve of the photovoltaic module has two steps in the calculation method of the hotspot power loss of the photovoltaic module based on the I-V curve.
Step 2, calculating the photoelectric conversion power loss P of the hotspot cellsunThe method specifically comprises the following steps:
step 2.1, reading rated maximum output power P from a photovoltaic module nameplatemMeasuring the specification of the photovoltaic module cell; recording the length of the cell as a and the width of the cell as b, and calculating the photoelectric conversion efficiency eta of the photovoltaic module, wherein the calculation formula is as follows:
Figure BDA0001912871880000084
step 2.2, reading the actual maximum output power of n photovoltaic modules in the photovoltaic group string through the module optimizer, comparing the actual maximum output power, and taking the maximum value as the reference maximum output power P of the photovoltaic modulesm a maxThen the loss P of photoelectric conversion power of the hot spot cellsunIs calculated as follows:
Figure BDA0001912871880000085
step 3, calculating the total power loss P of the hot spots of the photovoltaic modulehot；
If the I-V output characteristic curve of the photovoltaic module has no steps, the total power loss P of hot spots of the photovoltaic modulehot＝Psun；
If the I-V output characteristic curve of the photovoltaic module has a step, the photovoltaic module has a substring with hot spots, and the total power loss of the hot spots of the substring is recorded as Phot1Total power loss of hot spot P of photovoltaic modulehot＝Phot1Wherein P ishot1＝Pr1+Psun；
If the I-V output characteristic curve of the photovoltaic module has two steps, the photovoltaic module has two stepsThe substrings have heat spots, and the total power loss of the heat spots of the two substrings is respectively recorded as Phot2、Phot3Total power loss P of hot spot of photovoltaic modulehot＝Phot2+Phot3Wherein, Phot2＝Pr2+Psun，Phot3＝Pr3+Psun。

Claims (1)

1. A photovoltaic module hot spot power loss calculation method based on an I-V curve relates to a photovoltaic module which is one of photovoltaic group strings, wherein the photovoltaic group strings are formed by connecting n photovoltaic modules with the same structure in series, each photovoltaic module is formed by connecting three sub-strings with the same structure in series, and each sub-string comprises n sub-stringscellA cell and a bypass diode, ncellThe battery pieces are connected in parallel with the bypass diode after being connected in series, wherein ncellIs a positive integer;
the photovoltaic module hot spot power loss calculation method based on the I-V curve is characterized by comprising the following steps of:
step 1, calculating reverse bias power loss P of hot spot batteryrThe method specifically comprises the following steps:
step 1.1, reading the working current I of the photovoltaic module on a module optimizermAnd operating voltage Um；
Step 1.2, extracting an I-V output characteristic curve of the photovoltaic module through a module optimizer with an I-V scanning function;
step 1.3, analyzing the I-V output characteristic curve obtained in step 1.2, and making the following judgment:
if no step is formed on the curve, the photovoltaic module has no hot spot, and the reverse bias power loss P of a hot spot battery is not neededrCalculating;
if a step is arranged on the curve, a substring of the photovoltaic module has hot spots, the step is marked as a step 1, and the reverse bias power loss of a hot spot battery of the substring is marked as Pr1And go to step 1.4;
if two steps are arranged on the curve, the photovoltaic module is provided with two substrings with hot spots, the two steps are respectively marked as a step 2 and a step 3, and the two substringsThe reverse bias power loss of the hot spot battery is respectively marked as Pr2And Pr3And go to step 1.5;
step 1.4, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocVoltage value U at two end points of step 1 interval11、U12Current value I at two end points between step 1 and step11、I12Wherein U is11＞U12；
If Im＜I11,Pr1＝0；
If I11≤Im＜I12,Pr1＝(U11-Um)×Im；
If Im≥I12，
Figure FDA0001912871870000021
Step 1.5, resolving out photovoltaic module open-circuit voltage U from photovoltaic module I-V output characteristic curveocAnd voltage values U at two end points of step 2 interval21、U22And the current value I at two end points of the step 2 interval21、I22Voltage value U at two end points of step 3 interval31、U32And the current value I at two end points of the step 3 interval31、I32Wherein U is21＞U22＞U31＞U32；
If Im＜I21,Pr2＝0、Pr3＝0；
If I21≤Im＜I22,Pr2＝(U21-Um)×Im、Pr3＝0；
If I22≤Im＜I31,
Figure FDA0001912871870000022
Pr3＝0；
If I31≤Im＜I32，
Figure FDA0001912871870000023
Pr3＝(U31-Um)×Im；
If Im≥I32,
Figure FDA0001912871870000024
Step 2, calculating the photoelectric conversion power loss P of the hotspot cellsunThe method specifically comprises the following steps:
step 2.1, reading rated maximum output power P from a photovoltaic module nameplatemMeasuring the specification of the photovoltaic module cell; recording the length of the cell as a and the width of the cell as b, and calculating the photoelectric conversion efficiency eta of the photovoltaic module, wherein the calculation formula is as follows:
Figure FDA0001912871870000025
step 2.2, reading the actual maximum output power of n photovoltaic modules in the photovoltaic group string through the module optimizer, comparing the actual maximum output power, and taking the maximum value as the reference maximum output power of the photovoltaic modules
Figure FDA0001912871870000026
The photoelectric conversion power loss P of the hot spot cellsunIs calculated as follows:
Figure FDA0001912871870000031
step 3, calculating the total power loss P of the hot spots of the photovoltaic modulehot；
If the I-V output characteristic curve of the photovoltaic module has no steps, the total power loss P of hot spots of the photovoltaic modulehot＝Psun；
If the I-V output characteristic curve of the photovoltaic module has a step, the photovoltaic module has a substringIf there is a hot spot, the total power loss of the hot spot of the substring is marked as Phot1Total power loss of hot spot P of photovoltaic modulehot＝Phot1Wherein P ishot1＝Pr1+Psun；
If the I-V output characteristic curve of the photovoltaic module has two steps, the photovoltaic module has two sub-strings with hot spots, and the total power loss of the hot spots of the two sub-strings is respectively marked as Phot2、Phot3Then total power loss P of hot spot of photovoltaic modulehot＝Phot2+Phot3Wherein P ishot2＝Pr2+Psun，Phot3＝Pr3+Psun。
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