CN109881161A - The control test device of plated film ion source - Google Patents
The control test device of plated film ion source Download PDFInfo
- Publication number
- CN109881161A CN109881161A CN201910178450.2A CN201910178450A CN109881161A CN 109881161 A CN109881161 A CN 109881161A CN 201910178450 A CN201910178450 A CN 201910178450A CN 109881161 A CN109881161 A CN 109881161A
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- plc controller
- ion source
- plated film
- high voltage
- pot
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- 238000012360 testing method Methods 0.000 title claims abstract description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 21
- 239000010453 quartz Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000001816 cooling Methods 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 6
- 238000010849 ion bombardment Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 101100298225 Caenorhabditis elegans pot-2 gene Proteins 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Abstract
The invention discloses a kind of control test devices of plated film ion source, it include setting in the indoor quartzy pot of vacuum, it is connected with the argon gas pipeline by argon gas on the quartz pot, the RF coil for exciting argon gas is additionally provided with below the quartz pot, the top of the quartz pot is equipped with aperture plate；Acquisition and the control external hardware device of data are handled by using the PLC controller of strong antijamming capability, improve the ability of electromagnetism interference, realize the precise measurement to the working range of plated film ion source, to ensure that the plated film ion source can satisfy the demand of production, to guarantee the work quality of plated film ion source.
Description
Technical field
The present invention relates to ion source the field of test technology, and in particular to a kind of control survey of the plated film ion source of 13.56MHz
Trial assembly is set.
Background technique
In the prior art, optical coating is more and more wider in the application of industrial circle, because its deposition velocity is fast, ion energy
The high, advantages such as target ionization level is big and be widely used in field of industrial production, be related to inserted tool, lamps and lanterns, home decoration, mould
The industrial production and manufacturings industry such as tool, phone housing stainless steel materials.And optical coating is generally used arc ion plating film device
It is produced, a main problem existing for traditional arc ion plating film device: electric arc source control system is vulnerable to surrounding
Electromagnetic interference, stability is not high, reduces coating quality.
The information disclosed in the background technology section is intended only to deepen understanding of the general background technology to the present invention, and
It is not construed as recognizing or implying in any form that the information constitutes the prior art known to those skilled in the art.
Summary of the invention
In order to solve the above technical problems, the invention proposes the control test devices of plated film ion source, to reach to plated film
Ion source working range is effectively measured and be ensure that plated film ion source meets the purpose of production requirement.
In order to achieve the above objectives, technical scheme is as follows:
A kind of control test device of plated film ion source includes that setting connects on the indoor quartzy pot of vacuum, the quartz pot
It is connected to the argon gas pipeline by argon gas, the RF coil for exciting argon gas, the quartz pot are additionally provided with below the quartz pot
Top be equipped with aperture plate；
It is also connected with positive high voltage source, negative high voltage source on the quartz pot, the positive high voltage source and negative high voltage source are by PLC controller
Intelligent control is carried out, plasma is enclosed quartzy pot by the positive high voltage that the bottom of the aperture plate is generated by positive high voltage source, described
Cation is extracted out by the negative high voltage that negative high voltage source generates and is beaten in target base plate by the middle layer of aperture plate；
The PLC controller is connect by RF signal source with the RF coil；
The argon gas pipeline is equipped with flow controller, and the flow controller is connect with the PLC controller signal；
The vacuum chamber is also connected with vacuum pump, and the vacuum pump is connect with the PLC controller signal.
The present invention handles the acquisition of data by using the PLC controller of strong antijamming capability and control external hardware is set
It is standby, improve the ability of electromagnetism interference, realize the precise measurement to the working range of plated film ion source, with ensure the plated film from
Component can satisfy the demand of production, to guarantee the work quality of plated film ion source.
Preferably, the PLC controller is also connected with galvanometer, the galvanometer exists for testing positive ion bombardment
Generated electric current on substrate.
Preferably, the vacuum pump includes the molecular pump and mechanical pump being serially connected, the molecular pump with it is described
Vacuum chamber, the molecular pump connects by ionization gauge with the PLC controller signal, the mechanical pump pass through Pirani gauge and
The PLC controller signal connection.It is realized using ionization gauge, molecular pump, Pirani gauge and mechanical pump real to the indoor pressure of vacuum
Now detect.
Preferably, the RF signal source is connect by impedance matching box with the RF coil, the RF signal source, resistance
Anti- adaptation and ion source are cooled down by hydrologic cycle cooling system.By hydrologic cycle cooling system realize to RF signal source,
The cooling of impedance matching box and ion source extends the service life of equipment.
Preferably, the PLC controller can also be connected with the indication mechanism for display, the indication mechanism is upper
Position machine EPICS, and host computer EPICS can export control signal to the PLC controller.It is convenient for staff by indication mechanism
Know each detection data, and makes corresponding instruction according to the data.
The present invention has the advantage that
1. the present invention handles the acquisition of data by using the PLC controller of strong antijamming capability and control external hardware is set
It is standby, improve the ability of electromagnetism interference, realize the precise measurement to the working range of plated film ion source, with ensure the plated film from
Component can satisfy the demand of production, to guarantee the work quality of plated film ion source.
2. the present invention is realized using ionization gauge, molecular pump, Pirani gauge and mechanical pump realizes detection to the indoor pressure of vacuum.
3. the present invention realizes the cooling to RF signal source, impedance matching box and ion source by hydrologic cycle cooling system, prolong
The service life of equipment is grown.
4. the present invention knows each detection data by indication mechanism convenient for staff, and is made accordingly according to the data
Instruction.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described.
Fig. 1 is the schematic illustration of the control test device of plated film ion source disclosed by the embodiments of the present invention；
Number and corresponding component title represented by letter in figure:
1. 3. 5. aperture plate of argon gas pipeline 4.RF coil of the quartzy pot of vacuum chamber 2., 6. positive high voltage source
7. 9. galvanometer 10.RF signal source of negative high voltage source 8.PLC controller, 11. impedance matching box
12. 15. mechanical pump of hydrologic cycle cooling system 13. flow controller, 14. molecular pump, 16. ionization gauge
17. 18. host computer EPICS19. ion source of Pirani gauge.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.
The present invention provides the control test devices of plated film ion source, its working principle is that by using strong antijamming capability
PLC controller handle acquisition and the control external hardware device of data, improve the ability of electromagnetism interference, realize to plating
The precise measurement of the working range of film ion source, to ensure that the plated film ion source can satisfy the demand of production, to guarantee to plate
The work quality of film ion source.
Below with reference to embodiment and specific embodiment, the present invention is described in further detail.
As shown in Figure 1, a kind of control test device of plated film ion source, includes the quartzy pot being arranged in vacuum chamber 1
2, argon gas pipeline 3 by argon gas is connected on the quartz pot, is additionally provided with below the quartz pot for exciting argon gas
The top of RF coil 4, the quartz pot is equipped with aperture plate 5；
It is also connected with positive high voltage source 6, negative high voltage source 7 on the quartz pot, the positive high voltage source and negative high voltage source are controlled by PLC
Device 8(PLC controller can be using including but not limited to siemens PLC series of products) intelligent control is carried out, the aperture plate
For the positive high voltage that the bottom is generated by positive high voltage source by the enclosed quartzy pot of plasma, the middle layer of the aperture plate passes through negative high voltage source
Cation is extracted out and is beaten in target base plate by the negative high voltage of generation；
The PLC controller is also connected with galvanometer 9, and the galvanometer is generated on substrate for testing positive ion bombardment
Electric current；
The PLC controller is connected with RF signal source 10, and the RF signal source is connected by impedance matching box 11 and the RF coil
It connects, the RF signal source, impedance matching box and ion source are cooled down by hydrologic cycle cooling system 12；
The argon gas pipeline is equipped with flow controller 13, and the flow controller is connect with the PLC controller signal；
The vacuum chamber is also connected with vacuum pump, and the vacuum pump includes the molecular pump 14 and mechanical pump 15 being serially connected, institute
Molecular pump and the vacuum chamber are stated, the molecular pump is connect by ionization gauge 16 with the PLC controller signal, the machine
Tool pump is connect by Pirani gauge 17 with the PLC controller signal.
The PLC controller can also be connected with the indication mechanism for display, and the indication mechanism is host computer
EPICS18, and host computer EPICS can export control signal to the PLC controller.
It is of the invention that specifically used steps are as follows: again as shown in Figure 1, this test device is specifically used as follows:
1) before test, needs first to extract the air of vacuum chamber out, to guarantee that vacuum chamber reaches operating condition, specifically such as
Under:
Before 1-1) is passed through argon gas: being extracted out the air of vacuum chamber using molecular pump 14 and mechanical pump 15, to guarantee that vacuum chamber 1 reaches
To certain vacuum degree (room pressure is lower than 1 × 10-3Pa)；
1-2) circuit makes argon gas pipeline 3 pour argon gas into quartzy pot 2 to electric-opening flow controller 13, while in secondary process
Middle molecular pump and mechanical pump work at the same time, to guarantee 1 room pressure of vacuum chamber lower than 1 × 10-2Pa.
The monitoring situation of house vacuum is measured according to the inlet pressure of molecular pump 14 in the course of work of vacuum pump, should
Monitoring device is ionization gauge 16；Consider that outlet pressure when molecule pump work has to be lower than 2Pa, in the outlet phase with molecular pump 14
The entrance installation Pirani gauge 17 of the mechanical pump 15 of connection monitors to carry out the outlet pressure of molecular pump 14, PLC controller acquisition
The atmospheric pressure value that ionization gauge 16 is fed back monitors argon gas to monitor the gas flow that vacuum indoor pressure and flow controller 13 are fed back
Flow size.
2) .PLC controller 8, which controls RF signal source 10, makes the RF coil that quartzy pot bottom is arranged in by impedance matching box 11
4 high frequencies (13.56MHz) generated carry out ionization argon gas, form the mixed neutral plasma state such as electronics and cation, simultaneously
PLC controls the numerical value of input power and feedback power that its 8 acquisition RF signal source 4 is fed back；
3) .PLC controller 8 controls positive high voltage source 6 and negative high voltage source 7 to inhibit anion and extract cation, the most bottom of aperture plate 5
Layer generates positive high voltage by positive high voltage source 6 will be in the enclosed quartzy pot of plasma；The middle part of aperture plate generates negative height by negative high voltage source
Cation is extracted out and is beaten in target base plate by pressure；PLC controller 8 acquires the electricity that positive high voltage source 6 and negative high voltage source 7 are fed back simultaneously
The size of 9 feedback current of pressure value and galvanometer.
4) .PLC controller 8 will pass to host computer EPICS's 18 by network communication mode after the data processing of acquisition
Control interface receives the control command of host computer simultaneously also by network communication mode.Detailed process is as follows: using I/O
EPICS server in Server releases the required process variable (PV) detected in Labview, host computer
The control interface (OPI) at 18 end EPICS can detecte the process variable of publication.And host computer EPICS 18 and PLC is controlled
Device 8 uses network communication mode, so as to quickly monitor and adjust relevant parameter.
To sum up, PLC controller 8 acquires each external hardware device and exports to the signal of ion source 19, is then passed to
Position machine EPICS is shown；Host computer EPICS feedback signal is set to PLC controller to control corresponding external hardware simultaneously
It is standby.It is finally completed the test job that this kind of 13.56MHz flies plated film ion source.
By above mode, the control test device of plated film ion source provided by the present invention, by using anti-interference
The strong PLC controller of ability handles acquisition and the control external hardware device of data, improves the ability of electromagnetism interference, real
Now to the precise measurement of the working range of plated film ion source, to ensure that the plated film ion source can satisfy the demand of production, thus
Guarantee the work quality of plated film ion source.
Above-described is only the preferred embodiment of the control test device of plated film ion source disclosed in this invention, is answered
When pointing out, for those of ordinary skill in the art, without departing from the concept of the premise of the invention, can also make
Several modifications and improvements, these are all within the scope of protection of the present invention.
Claims (5)
1. a kind of control test device of plated film ion source, which is characterized in that include setting in the indoor quartzy pot of vacuum, institute
The argon gas pipeline being connected on quartzy pot through argon gas is stated, the RF line for exciting argon gas is additionally provided with below the quartz pot
The top of circle, the quartz pot is equipped with aperture plate；
It is also connected with positive high voltage source, negative high voltage source on the quartz pot, the positive high voltage source and negative high voltage source are by PLC controller
Intelligent control is carried out, plasma is enclosed quartzy pot by the positive high voltage that the bottom of the aperture plate is generated by positive high voltage source, described
Cation is extracted out by the negative high voltage that negative high voltage source generates and is beaten in target base plate by the middle layer of aperture plate；
The PLC controller is connect by RF signal source with the RF coil；
The argon gas pipeline is equipped with flow controller, and the flow controller is connect with the PLC controller signal；
The vacuum chamber is also connected with vacuum pump, and the vacuum pump is connect with the PLC controller signal.
2. the control test device of plated film ion source according to claim 1, which is characterized in that the PLC controller is also
It is connected with galvanometer, the galvanometer is for testing positive ion bombardment generated electric current on substrate.
3. the control test device of plated film ion source according to claim 1, which is characterized in that the vacuum pump includes
The molecular pump and mechanical pump being serially connected, the molecular pump and the vacuum chamber, the molecular pump pass through ionization gauge and institute
The connection of PLC controller signal is stated, the mechanical pump is connect by Pirani gauge with the PLC controller signal.
4. the control test device of plated film ion source according to claim 1, which is characterized in that the RF signal source passes through
Impedance matching box is connect with the RF coil, and the RF signal source, impedance matching box and ion source are by hydrologic cycle cooling system
It is cooled down.
5. the control test device of plated film ion source according to claim 1, which is characterized in that the PLC controller is also
It can be connected with the indication mechanism for display, the indication mechanism is host computer EPICS, and host computer EPICS can be to the PLC
Controller output control signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910178450.2A CN109881161A (en) | 2019-03-11 | 2019-03-11 | The control test device of plated film ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910178450.2A CN109881161A (en) | 2019-03-11 | 2019-03-11 | The control test device of plated film ion source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109881161A true CN109881161A (en) | 2019-06-14 |
Family
ID=66931658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910178450.2A Pending CN109881161A (en) | 2019-03-11 | 2019-03-11 | The control test device of plated film ion source |
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| Country | Link |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197115A (en) * | 2001-12-25 | 2003-07-11 | Shincron:Kk | Ion source device |
| US20030234371A1 (en) * | 2002-06-19 | 2003-12-25 | Ziegler Byron J. | Device for generating reactive ions |
| US20040104683A1 (en) * | 2002-05-22 | 2004-06-03 | Ka-Ngo Leung | Negative ion source with external RF antenna |
| CN203639541U (en) * | 2013-11-10 | 2014-06-11 | 广东世创金属科技有限公司 | Flexible multifunctional vacuum coating equipment and intelligent control system thereof |
| US20150298086A1 (en) * | 2012-12-07 | 2015-10-22 | Institute Of Soil Science, Chinese Academy Of Sciences | Control System of Full-Automatic Cold Plasma Seed Processor |
| CN209798084U (en) * | 2019-03-11 | 2019-12-17 | 江苏安德信超导加速器科技有限公司 | control testing device of coating ion source |
| WO2022151644A1 (en) * | 2021-01-18 | 2022-07-21 | 中国电子科技集团公司第四十八研究所 | Ion beam coating device and coating method therefor |
-
2019
- 2019-03-11 CN CN201910178450.2A patent/CN109881161A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197115A (en) * | 2001-12-25 | 2003-07-11 | Shincron:Kk | Ion source device |
| US20040104683A1 (en) * | 2002-05-22 | 2004-06-03 | Ka-Ngo Leung | Negative ion source with external RF antenna |
| US20030234371A1 (en) * | 2002-06-19 | 2003-12-25 | Ziegler Byron J. | Device for generating reactive ions |
| US20150298086A1 (en) * | 2012-12-07 | 2015-10-22 | Institute Of Soil Science, Chinese Academy Of Sciences | Control System of Full-Automatic Cold Plasma Seed Processor |
| CN203639541U (en) * | 2013-11-10 | 2014-06-11 | 广东世创金属科技有限公司 | Flexible multifunctional vacuum coating equipment and intelligent control system thereof |
| CN209798084U (en) * | 2019-03-11 | 2019-12-17 | 江苏安德信超导加速器科技有限公司 | control testing device of coating ion source |
| WO2022151644A1 (en) * | 2021-01-18 | 2022-07-21 | 中国电子科技集团公司第四十八研究所 | Ion beam coating device and coating method therefor |
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Application publication date: 20190614 |