CN109872695B - Detection voltage correction method of AMOLED pixel driving circuit - Google Patents

Detection voltage correction method of AMOLED pixel driving circuit Download PDF

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CN109872695B
CN109872695B CN201910291251.2A CN201910291251A CN109872695B CN 109872695 B CN109872695 B CN 109872695B CN 201910291251 A CN201910291251 A CN 201910291251A CN 109872695 B CN109872695 B CN 109872695B
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黄泰钧
曾玉超
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

The invention relates to a detection voltage correction method of an AMOLED pixel driving circuit. The AMOLED pixel driving circuit comprises: a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a first capacitor (Cst), and an organic light emitting diode (D1); the detection voltage correction method of the AMOLED pixel driving circuit comprises the following steps: step 10, collecting detection parameters of the AMOLED pixel driving circuit; step 20, establishing a detection voltage (Vsamp) correction coefficient lookup table related to the number of rows where the AMOLED pixel driving circuit is located; and step 30, correcting the detection voltage (Vsamp) by using the lookup table according to the number of rows of the AMOLED pixel driving circuit. The detection voltage correction method of the AMOLED pixel driving circuit can reduce the detection error of the AMOLED pixel driving circuit and correct the threshold voltage detection result of each pixel, thereby reducing the threshold voltage detection error.

Description

Detection voltage correction method of AMOLED pixel driving circuit
Technical Field
The invention relates to the technical field of display, in particular to a detection voltage correction method of an AMOLED pixel driving circuit.
Background
Organic Light Emitting Diode (OLED) display devices have many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, and wide temperature range, and are considered to be the most promising display devices in the industry.
The OLED display panel may be classified into two broad categories, i.e., a Passive Matrix OLED (PMOLED) and an Active Matrix OLED (AMOLED), according to a driving manner. The AMOLED panel has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used for a large-sized display device with high definition.
AMOLED occupies the middle-high-end market of the panel industry, consumers have higher and higher requirements on the resolution, when the resolution is too high, due to size limitation, all Source drivers (Source drivers) are not distributed on one side of the panel, and the common solution for the distribution of the Source drivers is that the Source drivers are distributed on the upper side and the lower side of the panel and are respectively connected with odd-numbered columns of pixels and even-numbered columns of pixels.
Referring to fig. 1, a conventional source driver distribution diagram of an AMOLED panel is shown. The AMOLED panel 1 is provided with pixels 2 arranged in an array mode, the upper side and the lower side of the AMOLED panel 1 are respectively provided with a source driver-upper part and a source driver-lower part, the source driver-upper part is connected with and drives the pixels 2 of even columns, such as the pixels B of a first row of a second column, and the source driver-lower part is connected with and drives the pixels 2 of odd columns, such as the pixels A of a first row of a first column.
Referring to fig. 2, which is a schematic diagram illustrating a connection relationship between a source driver and an AMOLED pixel in a conventional AMOLED panel, the source driver connects and drives pixels 3 in even columns, and the source driver connects and drives pixels 3 in odd columns, each pixel 3 is composed of a plurality of sub-pixels, for example, the pixel 3 in fig. 2 includes four sub-pixels RGBW. The connection relationship between the source driver and the AMOLED pixels will be described by taking the source driver-lower as an example, where the source driver-lower is connected to the sub-pixels of the first column of pixels 3 through the data lines D1 to D4 and the Sensing Line (Sensing Line) S1, and is connected to the sub-pixels of the third column of pixels 3 through the data lines D5 to D8 and the Sensing Line S2.
Referring to fig. 3, a schematic diagram of a conventional AMOLED pixel driving circuit with a detection function is shown, the AMOLED pixel driving circuit mainly includes: a first thin film transistor T1, a second thin film transistor T2 as a driving thin film transistor, a third thin film transistor T3, a first capacitor Cst, i.e., a storage capacitor Cst of the pixel, and an organic light emitting diode D1; the AMOLED pixel driving circuit is connected with the detection circuit through the detection line to achieve the detection function, the detection circuit obtains a detection voltage Vsamp from the AMOLED pixel driving circuit through the detection line, referring to FIG. 2, the detection circuit can be contained in the source driver, the threshold voltage Vth of the second thin film transistor T2 can be compensated by the detection voltage Vsamp, as the AMOLED panel is a current-driven display device, the uniformity and stability of the driving thin film transistor can affect the display effect, and the display quality can be improved by compensating the threshold voltage Vth of the second thin film transistor T2.
The gate electrode of the first thin film transistor T1 is connected to a first scan signal WR, the source electrode and the drain electrode are respectively connected to a Data signal Data and a first node g, and the first thin film transistor T1 transmits the Data signal Data to the gate electrode of the second thin film transistor T2 under the control of the first scan signal WR; a gate electrode of the second thin film transistor T2 is connected to the first node g, and a source electrode and a drain electrode are connected to the second node s and the power supply high voltage VDD, respectively; a gate of the third thin film transistor T3 is connected to the second scan signal RD, and a source and a drain are connected to the second node s and the sensing line, respectively; two ends of the first capacitor Cst are respectively connected with the first node g and the second node s; the organic light emitting diode D1 has an anode connected to the second node s and a cathode connected to the power supply low voltage VSS.
The impedances of the sensing lines themselves include Fanout (Fanout) impedance R1 of the sensing lines and effective display area (AA) impedance R2 of the sensing lines, and the closer to the source driver, the smaller the effective display area impedance R2.
The detection circuit mainly comprises a second capacitor, namely a detection capacitor Csen, a detection pin ADC and a reference voltage output end; the detection pin ADC is connected to the detection line through a first switch K1, the first switch K1 connects the detection pin ADC to the detection line under the control of the detection signal samp, so that the detection pin ADC can obtain a detection voltage Vsamp from the AMOLED pixel driving circuit through the detection line, and the detection pin ADC can be further connected to the analog-to-digital conversion circuit to convert the detection voltage Vsamp; the reference voltage output end is connected with the detection line through a second switch K2, and the second switch K2 connects the reference voltage output end with the detection line under the control of the control signal sen _ pre, so that the reference voltage output end can output a reference voltage Vref to the AMOLED pixel driving circuit through the detection line; two ends of the second capacitor Csen are respectively connected with the detection line and the ground.
Referring to fig. 4 and 5, fig. 4 is a timing diagram illustrating the detection of the threshold voltage Vth of the AMOLED pixel driving circuit of fig. 3, and fig. 5 is a diagram illustrating the detection result of the threshold voltage Vth of the AMOLED pixel driving circuit of fig. 3. As can be seen from fig. 4, in the threshold voltage detection stage, the voltages Vs of the pixels a and B at the second node s start to climb, and for the threshold voltage detection, when the detection circuit samples through the detection pin ADC, the current on the detection line approaches to 0, and at this time, the detection voltage Vsamp is considered to be equal to the voltage Vs; since the closer to the source driver, the smaller the effective display area impedance R2 of the detection line, the inconsistent impedance from the same row of pixels connected by the same detection line to the source driver; the difference of the effective display area resistances R2 affects the rising speed of the voltage Vs, resulting in an error between the voltages Vs of the pixels in the odd and even rows of the same column, such as the pixels a and B, thereby affecting the threshold voltage Vth detection result; in fig. 5, the grayscale represents the error of the threshold voltage Vth detection result of the pixels at different positions of the panel, and the source drivers are required to be disposed at the upper and lower sides of the panel, which results in the error of the threshold voltage Vth detection result of the AMOLED pixel driving circuit.
Disclosure of Invention
Therefore, an object of the present invention is to provide a detection voltage correction method for an AMOLED pixel driving circuit, which corrects the threshold voltage detection error caused by the source drivers distributed on the upper and lower sides of the panel.
In order to achieve the above object, the present invention provides a detection voltage correction method for an AMOLED pixel driving circuit, including:
step 10, collecting detection parameters of the AMOLED pixel driving circuit;
step 20, establishing a detection voltage correction coefficient lookup table related to the number of rows where the AMOLED pixel driving circuit is located;
and step 30, detecting the AMOLED pixel driving circuit by using the detection circuit, and correcting the detection voltage by using the lookup table according to the number of rows of the AMOLED pixel driving circuit.
Wherein the AMOLED pixel driving circuit includes: a first thin film transistor, the grid electrode of which is connected with a first scanning signal, and the source electrode and the drain electrode of which are respectively connected with a data signal and a first node; a second thin film transistor having a gate connected to the first node, and a source and a drain connected to the second node and a power supply high voltage, respectively; a third thin film transistor, the grid of which is connected with the second scanning signal, and the source and the drain of which are respectively connected with the second node and the detection line; a first capacitor, two ends of which are respectively connected with a first node and a second node; and the anode of the organic light emitting diode is connected with the second node, and the cathode of the organic light emitting diode is connected with the low voltage of the power supply.
The detection parameters include a storage capacitor Cst of the AMOLED pixel driving circuit, a detection capacitor Csen of the detection circuit, a fan-out impedance R1 of the detection line, an effective display area impedance R2 of the detection line, and a detection time t.
When the detection circuit detects the threshold voltage, the detection voltage is set to be equal to a second node voltage Vs at a second node.
The effective display area impedance R2 of the detection line is divided into N-1 equal parts, each equal part impedance is set as R, N is the total number of rows of AMOLED pixels, the fan-out impedance R1 of the detection line is set to be equal to z × R, and for the same row of pixels, the relationship between the voltage second node voltage Vsn detection result of the N-th row of AMOLED pixel driving circuits and the second node voltage Vs1 detection result of the 1-th row of AMOLED pixel driving circuits is expressed by a function f (N):
Figure BDA0002024980760000041
wherein P ═ k2*A2T, Q, k, a + C, k being a constant; a is Vg-Vth, Vth being a threshold voltage of the second thin film transistor (T2), and Vg being a first node voltage at the first node (g); and C ═ Cst + Csen, Cst is the storage capacitance of the AMOLED pixel driving circuit, and Csen is the detection capacitance of the detection circuit.
When the pixels driven by the AMOLED pixel driving circuit are positioned in odd rows, the detection line is connected with a detection circuit contained in a source electrode driver positioned below the AMOLED panel to provide detection voltage; when the pixels driven by the AMOLED pixel driving circuit are positioned in even rows, the detection line is connected with a detection circuit included in a source electrode driver positioned above the AMOLED panel to provide a detection voltage.
When the pixels driven by the AMOLED pixel driving circuit are positioned in odd rows, the detection line is connected with a detection circuit contained in a source electrode driver positioned above the AMOLED panel to provide detection voltage; when the pixels driven by the AMOLED pixel driving circuit are positioned in even rows, the detection line is connected with a detection circuit included in a source electrode driver positioned below the AMOLED panel to provide a detection voltage.
The detection circuit comprises a second capacitor, a detection pin and a reference voltage output end; the detection pin is connected with the detection line through a first switch, and the first switch is used for connecting and conducting the detection pin and the detection line under the control of a detection signal, so that the detection pin obtains a detection voltage from the AMOLED pixel driving circuit through the detection line; the reference voltage output end is connected with the detection line through a second switch, and the second switch connects the reference voltage output end with the detection line under the control of the control signal, so that the reference voltage output end outputs reference voltage to the AMOLED pixel driving circuit through the detection line; two ends of the second capacitor are respectively connected with the detection line and the ground.
The detection pin is further connected with an analog-to-digital conversion circuit to convert the detection voltage.
In summary, the detection voltage correction method for the AMOLED pixel driving circuit of the present invention can reduce the detection error of the AMOLED pixel driving circuit, and can correct the threshold voltage detection result of each pixel, thereby reducing the threshold voltage detection error.
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The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
In the drawings, there is shown in the drawings,
FIG. 1 is a schematic diagram of a source driver distribution of a conventional AMOLED panel;
FIG. 2 is a schematic diagram illustrating a connection relationship between a source driver and an AMOLED pixel in a conventional AMOLED panel;
FIG. 3 is a schematic diagram of a conventional AMOLED pixel driving circuit with a detection function;
FIG. 4 is a timing diagram illustrating the detection of the threshold voltage Vth of the AMOLED pixel driving circuit of FIG. 3;
FIG. 5 is a diagram illustrating a threshold voltage Vth detection result of the AMOLED pixel driving circuit of FIG. 3;
fig. 6 is a flowchart of a detection voltage correction method of the AMOLED pixel driving circuit according to the present invention.
Detailed Description
According to the detection voltage correction method of the AMOLED pixel driving circuit, detection parameters of the AMOLED pixel driving circuit of each row of the AMOLED panel are collected, and a lookup table for correcting the detection voltage Vsamp is established according to the difference of the detection voltage Vsamp of each row of the AMOLED pixel driving circuit relative to the detection parameters, so that the detection error of the threshold voltage Vth caused by the distribution of the source drivers on the upper side and the lower side of the AMOLED panel is corrected.
Referring to fig. 6, which is a flowchart of a detection voltage correction method of the AMOLED pixel driving circuit of the present invention, the method mainly includes:
step 10, collecting detection parameters of the AMOLED pixel driving circuit;
step 20, establishing a detection voltage correction coefficient lookup table related to the number of rows where the AMOLED pixel driving circuit is located;
and step 30, correcting the detection voltage by using a lookup table according to the number of rows of the AMOLED pixel driving circuit.
The detection voltage correction method of the AMOLED pixel driving circuit of the present invention can be understood by referring to fig. 1 to 4, and in a preferred embodiment of the present invention, the detection voltage correction method is applied to the AMOLED pixel driving circuit, which mainly includes:
a first thin film transistor T1, a second thin film transistor T2 as a driving thin film transistor, a third thin film transistor T3, a first capacitor Cst, and an organic light emitting diode D1; the AMOLED pixel driving circuit is connected with the detection circuit through the detection line to realize a detection function, and the detection circuit obtains a detection voltage Vsamp from the AMOLED pixel driving circuit through the detection line. The gate electrode of the first thin film transistor T1 is connected to a first scan signal WR, the source electrode and the drain electrode are respectively connected to a Data signal Data and a first node g, and the first thin film transistor T1 transmits the Data signal Data to the gate electrode of the second thin film transistor T2 under the control of the first scan signal WR; a gate electrode of the second thin film transistor T2 is connected to the first node g, and a source electrode and a drain electrode are connected to the second node s and the power supply high voltage VDD, respectively; a gate of the third thin film transistor T3 is connected to the second scan signal RD, and a source and a drain are connected to the second node s and the sensing line, respectively; two ends of the first capacitor Cst are respectively connected with the first node g and the second node s; the organic light emitting diode D1 has an anode connected to the second node s and a cathode connected to the power supply low voltage VSS.
Due to size limitation, one side of the panel is not distributed with all the source drivers, and the upper side and the lower side of the panel are respectively distributed with the source drivers and are respectively connected with pixels in odd columns and pixels in even columns. As shown in fig. 2, when the pixels driven by the AMOLED pixel driving circuit are located in odd rows, the detection line may be connected to a detection circuit included in a source driver located below the AMOLED panel to provide a detection voltage; when the pixels driven by the AMOLED pixel driving circuit are located in even rows, the detection line can be connected to a detection circuit included in a source driver located above the AMOLED panel to provide a detection voltage. Or, in other embodiments, when the pixels driven by the AMOLED pixel driving circuit are located in odd rows, the detection line is connected to the detection circuit included in the source driver on the first side of the AMOLED panel; when the pixels driven by the AMOLED pixel driving circuit are positioned in even rows, the detection lines are connected with the detection circuits included in the source drivers of a second side of the AMOLED panel, which is opposite to the first side.
The detection circuit can be included in the source driver, and mainly includes a second capacitor, i.e., a detection capacitor Csen of the detection circuit, a detection pin ADC, and a reference voltage output terminal, as shown in fig. 3; the detection pin ADC is connected to the detection line through a first switch K1, the first switch K1 connects the detection pin ADC to the detection line under the control of the detection signal samp, so that the detection pin ADC can obtain a detection voltage Vsamp from the AMOLED pixel driving circuit through the detection line, and the detection pin ADC can be further connected to the analog-to-digital conversion circuit to convert the detection voltage Vsamp; the reference voltage output end is connected with the detection line through a second switch K2, and the second switch K2 connects the reference voltage output end with the detection line under the control of the control signal sen _ pre, so that the reference voltage output end can output a reference voltage Vref to the AMOLED pixel driving circuit through the detection line; two ends of the second capacitor Csen are respectively connected with the detection line and the ground.
When the detection voltage correction method of the AMOLED pixel driving circuit of the present invention is implemented on the AMOLED pixel driving circuit, first collecting detection parameters of the AMOLED pixel driving circuit, including a first capacitor Cst, a second capacitor Csen, a fan-out impedance R1 of a detection line, an effective display area impedance R2 of the detection line, and a detection time t; for the AMOLED pixel driving circuit which is designed and determined in advance, the detection parameters are easy to obtain.
And then, establishing a detection voltage correction coefficient lookup table related to the number of rows of the AMOLED pixel driving circuit. When the threshold voltage is detected, the current on the detection line approaches 0 when the detection circuit samples through the detection pin ADC, so that the detection voltage Vsamp can be considered to be equal to the second node voltage Vs at the second node s, and the detection voltage Vsamp can be equivalently regarded as the second node voltage Vs.
The calculation formula of the second node voltage Vs is shown in the following formula (1):
Figure BDA0002024980760000071
where k is a constant associated with the second thin film transistor T2; a is Vg-Vth, Vth is the threshold voltage of the second thin film transistor T2, Vg is the first node voltage at the first node g, C is Cst + Csen, and B is Vref.
In order to establish the lookup table of the detection voltage correction coefficients related to the rows of the AMOLED pixel driving circuits, in a preferred embodiment of the invention, the effective display area impedance R2 of the detection line is divided into N-1 equal parts, each equal part impedance is set as R, N is the total number of rows of the AMOLED pixels, the fan-out impedance R1 of the detection line is set equal to z R, and for the same row of pixels, the relationship between the voltage second node voltage Vsn detection result of the nth row of the AMOLED pixel driving circuits and the second node voltage Vs1 detection result of the 1 st row of the AMOLED pixel driving circuits is expressed by the function f (N):
Figure BDA0002024980760000081
when R2 ═ R and R1 ═ z ═ R, the second node voltage Vs at the second node S is Vs1 after the detection time t; when R2 is n × R and R1 is 0, the second node voltage Vs at the second node S is Vsn after the detection time t;
wherein P ═ k2*A2T, Q k T a + C, k being a constant associated with the second thin film transistor T2; a is Vg-Vth, Vth is the threshold voltage of the second thin film transistor T2, and Vg is the first node voltage at the first node g; c ═ Cst + Csen.
Since the function f (n) is related to the number n of rows of the AMOLED pixel driving circuit, the correction coefficient related to the number n of rows of the AMOLED pixel driving circuit can be obtained by using f (n) and a detection voltage correction coefficient lookup table can be established.
After the lookup table is established, the detection voltage Vsamp can be corrected by using the lookup table according to the number of rows of the AMOLED pixel driving circuit, so that the detection error of the AMOLED pixel driving circuit is reduced. According to whether the pixels are in odd rows or even rows, in a preferred embodiment, the result of the Vsamp correction using the lookup table can be expressed as:
Vsamp-O’(n)=Vsamp-O(n)/f(N-n),Vsamp-O' (n) denotes the corrected detection voltage of the pixels in the odd rows, Vsamp-O(N) represents the detection voltage before the odd-numbered row pixel correction, and 1/f (N-N) represents the corresponding correction coefficient; and
Vsamp-E’(n)=Vsamp-E(n)/f(n-1),Vsamp-E' (n) denotes the corrected detection voltage of the even-numbered rows of pixels, Vsamp-E(n) represents the detection voltage before the even row pixel correction, and 1/f (n-1) represents the corresponding correction coefficient; the AMOLED detection result is corrected by adopting the correction coefficient, so that the AMOLED detection error can be reduced.
In summary, the detection voltage correction method for the AMOLED pixel driving circuit of the present invention can reduce the detection error of the AMOLED pixel driving circuit, and can correct the threshold voltage detection result of each pixel, thereby reducing the threshold voltage detection error.
As described above, it will be apparent to those skilled in the art that various other changes and modifications can be made based on the technical solution and the technical idea of the present invention, and all such changes and modifications should fall within the protective scope of the appended claims.

Claims (6)

1. A detection voltage correction method of an AMOLED pixel driving circuit is characterized by comprising the following steps:
step 10, collecting detection parameters of the AMOLED pixel driving circuit;
step 20, establishing a detection voltage correction coefficient lookup table related to the number of rows where the AMOLED pixel driving circuit is located;
step 30, detecting the AMOLED pixel driving circuit by using a detection circuit, and correcting the detection voltage by using a lookup table according to the number of rows of the AMOLED pixel driving circuit;
the AMOLED pixel driving circuit comprises: a first thin film transistor (T1) having a gate connected to a first scan signal (WR), and a source and a drain connected to a Data signal (Data) and a first node (g), respectively; a second thin film transistor (T2) having a gate connected to the first node (g), and a source and a drain connected to the second node(s) and a power supply high Voltage (VDD), respectively; a third thin film transistor (T3) having a gate connected to the second scan signal (RD), and a source and a drain connected to the second node(s) and the sensing line, respectively; a first capacitor (Cst) having both ends connected to the first node (g) and the second node(s), respectively; an organic light emitting diode (D1) having an anode connected to the second node(s) and a cathode connected to a power supply low Voltage (VSS);
setting the detection voltage equal to a second node voltage Vs at a second node(s) when the detection circuit detects the threshold voltage;
dividing the effective display area impedance R2 of the detection line into N-1 equal parts, setting the impedance of each equal part as R, wherein N is the total number of rows of AMOLED pixels, setting the fan-out impedance R1 of the detection line as z R, and for the same row of pixels, the relationship between the voltage second node voltage Vsn of the AMOLED pixel driving circuit in the nth row and the voltage Vs1 of the AMOLED pixel driving circuit in the 1 st row is expressed by a function f (N):
Figure FDA0003245448590000011
wherein P ═ k2*A2*t,Q ═ k ═ t a + C, k is a constant; a is Vg-Vth, Vth being a threshold voltage of the second thin film transistor (T2), and Vg being a first node voltage at the first node (g); and C ═ Cst + Csen, Cst is the storage capacitance of the AMOLED pixel driving circuit, and Csen is the detection capacitance of the detection circuit.
2. The method of claim 1, wherein the detection parameters include a storage capacitance of the AMOLED pixel driving circuit, a detection capacitance of the detection circuit, a fan-out resistance R1 of the detection line, an effective display area resistance R2 of the detection line, and a detection time t.
3. The method of claim 1, wherein the detection line is connected to a detection circuit included in a source driver disposed under an AMOLED panel to provide a detection voltage when the AMOLED pixel driving circuit drives pixels in odd rows; when the pixels driven by the AMOLED pixel driving circuit are positioned in even rows, the detection line is connected with a detection circuit included in a source electrode driver positioned above the AMOLED panel to provide a detection voltage.
4. The method of claim 1, wherein the detection line is connected to a detection circuit included in a source driver disposed above the AMOLED panel to provide a detection voltage when the pixels driven by the AMOLED pixel driving circuit are disposed in odd rows; when the pixels driven by the AMOLED pixel driving circuit are positioned in even rows, the detection line is connected with a detection circuit included in a source electrode driver positioned below the AMOLED panel to provide a detection voltage.
5. The method of correcting the detection voltage of the AMOLED pixel driving circuit as claimed in claim 1, wherein the detection circuit comprises a second capacitor (Csen), a detection pin (ADC) and a reference voltage output terminal; the detection pin (ADC) is connected with the detection line through a first switch (K1), and the first switch (K1) is used for connecting and conducting the detection pin (ADC) and the detection line under the control of a detection signal (samp), so that the detection pin (ADC) obtains a detection voltage from the AMOLED pixel driving circuit through the detection line; the reference voltage output end is connected with the detection line through a second switch (K2), and the second switch (K2) connects the reference voltage output end with the detection line under the control of the control signal (sen _ pre) so that the reference voltage output end outputs a reference voltage (Vref) to the AMOLED pixel driving circuit through the detection line; two ends of the second capacitor (Csen) are respectively connected with the detection line and the ground.
6. The method as claimed in claim 5, wherein the detection pin (ADC) is further connected to an analog-to-digital conversion circuit for converting the detection voltage.
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