CN109863609A - 氮化物半导体元件及其制造方法与所应用的封装结构 - Google Patents

氮化物半导体元件及其制造方法与所应用的封装结构 Download PDF

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Publication number
CN109863609A
CN109863609A CN201780045923.0A CN201780045923A CN109863609A CN 109863609 A CN109863609 A CN 109863609A CN 201780045923 A CN201780045923 A CN 201780045923A CN 109863609 A CN109863609 A CN 109863609A
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China
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mentioned
nitride
layer
based semiconductor
type
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CN201780045923.0A
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Inventor
林宏诚
陈宗源
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Everlight Electronics Co Ltd
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Everlight Electronics Co Ltd
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Publication of CN109863609A publication Critical patent/CN109863609A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

一种氮化物半导体元件(100)，其包括P型氮化物半导体(101)、N型氮化物半导体(102)、氮化物半导体量子井发光结构(103)、基板(104)以及缓冲层(105)。氮化物半导体量子井发光结构(103)位于P型氮化物半导体(101)以及N型氮化物半导体(102)之间，且包括多个井层(103A)以及多个阻挡层(103B)。各个井层(103A)以及各个阻挡层(103B)彼此交错配置。多个阻挡层(103B)包括配置于最接近P型氮化物半导***置(101)的第一阻挡层(103B1)、配置于最接近N型氮化物半导体(102)位置的第二阻挡层(103B2)以及多个第三阻挡层(103B3)。第一阻挡层(103B1)的厚度小于100埃。各个第三阻挡层(103B1)位于相邻的两个井层(103A)之间。缓冲层(105)位于N型氮化物半导体(102)以及基板(104)之间。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
CN201780045923.0A 2016-08-25 2017-08-23 氮化物半导体元件及其制造方法与所应用的封装结构 Pending CN109863609A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662379738P 2016-08-25 2016-08-25
US62/379,738 2016-08-25
US201762471946P 2017-03-15 2017-03-15
US62/471,946 2017-03-15
PCT/CN2017/098626 WO2018036513A1 (zh) 2016-08-25 2017-08-23 氮化物半导体元件及其制造方法与所应用的封装结构

Publications (1)

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CN109863609A true CN109863609A (zh) 2019-06-07

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CN (1) CN109863609A (zh)
TW (1) TWI668885B (zh)
WO (1) WO2018036513A1 (zh)

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CN110137323A (zh) * 2019-05-29 2019-08-16 福建兆元光电有限公司 带有AlN缓冲层的LED芯片及制造方法
TWI730460B (zh) * 2019-10-18 2021-06-11 進化光學有限公司 高出光效率的背接觸式全彩ｌｅｄ顯示面板及其製造方法
TWI730472B (zh) * 2019-10-25 2021-06-11 進化光學有限公司 使用雷射切割道絕緣之全彩ｌｅｄ顯示面板及其製造方法

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KR20020021247A (ko) * 2000-09-14 2002-03-20 양계모 터널접합 구조를 가지는 질화물반도체 발광소자
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TW201316546A (zh) * 2011-07-26 2013-04-16 Nichia Corp 半導體發光元件
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CN103972334A (zh) * 2014-05-14 2014-08-06 湘能华磊光电股份有限公司 Led外延层结构、生长方法及具有该结构的led芯片
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CN104766914A (zh) * 2015-04-20 2015-07-08 电子科技大学 一种高取光率的高压led芯片结构

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TW201807845A (zh) 2018-03-01
WO2018036513A1 (zh) 2018-03-01
TWI668885B (zh) 2019-08-11

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Application publication date: 20190607