CN109863259A8 - 母板、母板的制造方法、掩模的制造方法及oled像素蒸镀方法 - Google Patents

母板、母板的制造方法、掩模的制造方法及oled像素蒸镀方法 Download PDF

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Publication number
CN109863259A8
CN109863259A8 CN201780065621.XA CN201780065621A CN109863259A8 CN 109863259 A8 CN109863259 A8 CN 109863259A8 CN 201780065621 A CN201780065621 A CN 201780065621A CN 109863259 A8 CN109863259 A8 CN 109863259A8
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CN
China
Prior art keywords
motherboard
manufacturing
mask
evaporation coating
oled pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780065621.XA
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English (en)
Other versions
CN109863259A (zh
Inventor
张泽龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tgo Tech Corp
Original Assignee
Tgo Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160162464A external-priority patent/KR102266249B1/ko
Application filed by Tgo Tech Corp filed Critical Tgo Tech Corp
Publication of CN109863259A publication Critical patent/CN109863259A/zh
Publication of CN109863259A8 publication Critical patent/CN109863259A8/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

本发明涉及一种母板、母板的制造方法、掩模的制造方法及OLED像素蒸镀方法。本发明涉及的母板的制造方法，用于制造在通过电铸来制造掩模时所使用的母板，其特征在于，包含以下步骤：(a)提供导电性单晶硅材质的基材；以及(b)在基材的至少一表面上形成具有图案的绝缘部。
CN201780065621.XA 2016-11-03 2017-10-16 母板、母板的制造方法、掩模的制造方法及oled像素蒸镀方法 Pending CN109863259A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
KR20160145918 2016-11-03
KR10-2016-0145918 2016-11-03
KR10-2016-0162464 2016-12-01
KR1020160162464A KR102266249B1 (ko) 2016-11-03 2016-12-01 모판, 마스크 및 마스크의 제조방법
KR10-2017-0054471 2017-04-27
KR1020170054471A KR102032867B1 (ko) 2016-11-03 2017-04-27 모판의 제조 방법, 마스크의 제조 방법 및 oled 화소 증착 방법
PCT/KR2017/011362 WO2018084448A2 (ko) 2016-11-03 2017-10-16 모판, 모판의 제조 방법, 마스크의 제조 방법 및 oled 화소 증착 방법

Publications (2)

Publication Number Publication Date
CN109863259A CN109863259A (zh) 2019-06-07
CN109863259A8 true CN109863259A8 (zh) 2019-11-26

Family

ID=62075631

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780065621.XA Pending CN109863259A (zh) 2016-11-03 2017-10-16 母板、母板的制造方法、掩模的制造方法及oled像素蒸镀方法

Country Status (4)

Country Link
US (1) US20190252614A1 (zh)
CN (1) CN109863259A (zh)
TW (1) TW201833350A (zh)
WO (1) WO2018084448A2 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102109037B1 (ko) * 2018-11-13 2020-05-11 (주)애니캐스팅 다중배열전극을 이용한 유기 증착 마스크 제조 방법
KR102253601B1 (ko) * 2019-11-04 2021-05-21 파인원 주식회사 마그넷 플레이트 조립체
TWI825368B (zh) * 2020-12-07 2023-12-11 達運精密工業股份有限公司 金屬遮罩的製造方法
TW202227650A (zh) * 2021-01-13 2022-07-16 達運精密工業股份有限公司 遮罩、遮罩的製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878061A (en) * 1974-02-26 1975-04-15 Rca Corp Master matrix for making multiple copies
JPH0671882A (ja) * 1992-06-05 1994-03-15 Seiko Epson Corp インクジェットヘッド及びその製造方法
JP2000313984A (ja) * 1999-04-27 2000-11-14 Ricoh Co Ltd 電鋳原版及びその製造方法並びに振動板の製造方法
KR100340076B1 (ko) * 1999-06-28 2002-06-12 박종섭 전기 도금법을 이용한 플라즈마 디스플레이 패널의 전극 및 격벽의 동시 형성 방법
KR20030019654A (ko) * 2001-08-29 2003-03-07 일진다이아몬드(주) 마이크로렌즈 제조용 몰드 및 이를 이용한 마이크로렌즈의제조방법
JP2003282252A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置
CN101083303A (zh) * 2006-05-31 2007-12-05 中国科学院微电子研究所 一种基于模版制备各向异性有机场效应管的方法
CN101807669A (zh) * 2010-03-29 2010-08-18 南京大学 有机存储器
CN104681742B (zh) * 2013-11-29 2017-11-14 清华大学 有机发光二极管的制备方法
CN103972388B (zh) * 2014-05-09 2018-03-02 北京航空航天大学 制备尺寸可控的高取向有机小分子半导体单晶图案的方法
CN106067478A (zh) * 2016-08-08 2016-11-02 深圳市华星光电技术有限公司 像素界定层的制作方法与oled器件的制作方法

Also Published As

Publication number Publication date
WO2018084448A2 (ko) 2018-05-11
US20190252614A1 (en) 2019-08-15
TW201833350A (zh) 2018-09-16
WO2018084448A3 (ko) 2018-08-09
WO2018084448A8 (ko) 2019-11-07
CN109863259A (zh) 2019-06-07

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Page: The title page

Correction item: Priority

Correct: 10-2016-0145918 2016.11.03 KR|10-2016-0162464 2016.12.01 KR|10-2017-0054471 2016.12.01 KR

False: 10-2016-0145918 2016.11.03 KR|10-2016-0162464 2016.12.01 KR|10-2017-0054471 2017.04.27 KR

Number: 23-02

Volume: 35

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190607