CN109841516A - A kind of phosphorus diffusion method for IGBT product - Google Patents
A kind of phosphorus diffusion method for IGBT product Download PDFInfo
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- CN109841516A CN109841516A CN201711222289.1A CN201711222289A CN109841516A CN 109841516 A CN109841516 A CN 109841516A CN 201711222289 A CN201711222289 A CN 201711222289A CN 109841516 A CN109841516 A CN 109841516A
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Abstract
The present invention provides a kind of phosphorus diffusion method for IGBT product comprising following steps: S1, cleans IGBT silicon wafer using RCA technique；IGBT silicon wafer after cleaning is placed in fast bench heat treater, is passed through nitrogen by S2；S3, the IGBT silicon wafer being placed in fast bench heat treater are warming up to the first temperature, are passed through oxygen, form oxide layer on the surface of the IGBT silicon wafer；S4 is passed through oxygen and takes phosphorus source gas to oxidation-treated IGBT silicon wafer progress high temperature dopant at a temperature of described first；The IGBT silicon wafer that high temperature dopant obtains is cooled to second temperature by S5；S6 carries out low-temperature-doped to the IGBT silicon wafer after cooling under the second temperature；S7, the IGBT silicon wafer after low-temperature-doped is cooling, obtain the IGBT silicon wafer of phosphorus doping.Time of the invention is short, high-efficient, and heat budget is small, and available junction depth is shallow and meets the IGBT product of phosphorus doping density requirement.
Description
Technical field
The invention belongs to technical field of semiconductor device preparation, and in particular to a kind of phosphorus diffusion side for IGBT product
Method.
Background technique
Due to IGBT have DMOS input impedance is high, switching speed is fast, working frequency is high, the control of easy voltage, thermostabilization are good,
Driving circuit is simple, outside the features such as being easily integrated, and the conductivity modulation effect injected by collector hole greatly reduces conducting
Resistance reduces on-state function.Power IGBT is widely used to frequency-conversion domestic electric appliances, wind energy household electrical appliances, locomotive traction, intelligence electricity at present
The fields such as net, are a kind of power device of function admirable, wide market.Its restraining factors applied is higher cost, electricity
Learning performance, it still needs further improvement, therefore, for research staff, how to improve the electric property of IGBT, reduces production
Cost is vital.
And in the production of the technique of IGBT, phosphoric diffusion technology is one of the technology of wherein most critical.Phosphoric diffusion technology is main
Refer to that the area N+ phosphorus expands technique, the electrology characteristic and architectural characteristic in the area N+ have important shadow to performance such as Vgeth, Vceon etc. of chip
It rings.Phosphorus diffusion, traditional liquid phosphorus source expanding method mainly are carried out for doped source using liquid phosphorus oxychloride source in the prior art
Using furnace tube operation, not only time-consuming, and energy consumption is high, causes long production cycle, waste of raw materials and increased production cost, and by
In temperature distribution is non-uniform in boiler tube, cause being heated evenly property of silicon wafer poor, and then influences diffusion uniformity.
Therefore, presently, there are the problem of be badly in need of research and develop a kind of phosphorus diffusion method for IGBT product.
Summary of the invention
The technical problem to be solved by the present invention is to solve the above shortcomings of the prior art and to provide one kind to be used for IGBT product
Phosphorus diffusion method, the method uses rapid thermal treatment (RTP) board, phosphorus diffusion junction depth required for obtaining in a short time
With concentration requirement, surface dopant concentration not only can guarantee, but also can make a large amount of impurity diffusions and meet that shallow junction is deep and narrow Impurity Distribution, mention
High technique practicability and production capacity, have broad prospect of application.
For this purpose, the present invention provides a kind of phosphorus diffusion methods for IGBT product, comprising the following steps:
Step S1 cleans IGBT silicon wafer using RCA technique；
IGBT silicon wafer after cleaning is placed in fast bench heat treater, is passed through nitrogen by step S2；
Step S3, the IGBT silicon wafer being placed in fast bench heat treater are warming up to the first temperature, are passed through nitrogen and oxygen,
Oxide layer is formed on the surface of the IGBT silicon wafer；
Step S4, at a temperature of described first, be passed through oxygen and take phosphorus source gas to oxidation-treated IGBT silicon wafer into
The processing of row high temperature dopant；
The IGBT silicon wafer handled through high temperature dopant is cooled to second temperature by step S5；
Step S6 is passed through oxygen and takes phosphorus source gas to the IGBT silicon wafer obtained after cooling down under the second temperature
Carry out low-temperature-doped processing；
Step S7, will be cooling through low-temperature-doped treated IGBT silicon wafer, obtain the IGBT silicon wafer of phosphorus doping.
According to the present invention, the flow of the nitrogen is 50-2000sccm.
According to the present invention, the flow of the oxygen is 50-1000sccm.
According to the present invention, in step s3, the heating rate of the heating is 50-100 DEG C/s；First temperature is
800-1050℃。
According to the present invention, in step s3, the thickness of the oxide layer is less than or equal to
According to the present invention, the phosphorus source of taking in phosphorus source gas is POCl3, the current-carrying gas of taking in phosphorus source gas is nitrogen
Gas, the POCl3Flow be 100-1000sccm.
According to the present invention, in step s 4, the time of the high temperature dopant processing is 1-10min.
According to the present invention, in step s 5, the rate of temperature fall of the cooling is 50-10 DEG C/s；The second temperature is
600-800℃。
According to the present invention, in step s 6, the time of the low-temperature-doped processing is 1-10min.
According to the present invention, phosphorus doping density is (0.5-2) × 10 in the IGBT silicon wafer of the phosphorus doping20cm-3, junction depth is
0.4-1μm。
Provided by the present invention for the phosphorus diffusion method of IGBT product, the process time is short, based on the phosphorus quickly heated
Diffusion technique can be completed within the time within 10 minutes, be conducive to improve productivity；Phosphorus is promoted using pre-oxidation barrier layer
Diffusion uniformity；High-energy photon promotes impurity dissolution diffusion in high temperature section heat treatment, and low-temperature zone heat treatment is conducive to impurity segregation
Gettering, heat budget is smaller, and available phosphorus diffusion shallow junction is deep and meets the IGBT product of doping concentration requirement.
Detailed description of the invention
It is next with reference to the accompanying drawing that invention is further described in detail.
Fig. 1 shows process flow diagram of the present invention for the phosphorus diffusion method of IGBT product；
Fig. 2 shows technical process temperature change schematic diagram of the present invention for the phosphorus diffusion method of IGBT product.Attached drawing
The meaning of label is as follows:
1- is passed through nitrogen；2- is rapidly heated；3- oxidation and high temperature dopant；4- fast cooling；5- low-temperature-doped；6- drops naturally
Temperature, the cooling device out of 7-.
Specific embodiment
To keep the present invention easier to understand, below in conjunction with embodiment and attached drawing, the present invention will be described in detail, these realities
Apply example only serve it is illustrative, it is not limited to application range of the invention.
Furnace tube operation is used in view of traditional liquid phosphorus source expanding method, not only time-consuming, and energy consumption is high, causes production week
Phase is long, waste of raw materials and increased production cost, and since temperature distribution is non-uniform in boiler tube, leads to being heated evenly property of silicon wafer
Difference, and then diffusion uniformity is influenced, the present inventor has made intensive studies in IGBT product phosphorus diffusion field, proposes
A kind of phosphorus diffusion method for IGBT product, this method process time is short, and high-efficient, heat budget is small, and it is shallow to can get phosphorus diffusion
Junction depth and the IGBT product for meeting phosphorus doping density requirement.The present invention is based on what above-mentioned discovery was made.
Therefore, a kind of phosphorus diffusion method for IGBT product according to the present invention, includes the following steps:
Step S1 cleans IGBT silicon wafer using RCA technique；
IGBT silicon wafer after cleaning is placed in fast bench heat treater, is passed through nitrogen by step S2；
Step S3, the IGBT silicon wafer being placed in fast bench heat treater are warming up to the first temperature, are passed through nitrogen and oxygen,
Oxide layer is formed on the surface of the IGBT silicon wafer；
Step S4, at a temperature of described first, be passed through oxygen and take phosphorus source gas to oxidation-treated IGBT silicon wafer into
The processing of row high temperature dopant；
The IGBT silicon wafer handled through high temperature dopant is cooled to second temperature by step S5；
Step S6 is passed through oxygen and takes phosphorus source gas to the IGBT silicon wafer obtained after cooling down under the second temperature
Carry out low-temperature-doped processing；
Step S7, will be cooling through low-temperature-doped treated IGBT silicon wafer, obtain the IGBT silicon wafer of phosphorus doping.
In the above-mentioned phosphorus diffusion method for IGBT product, the flow of the nitrogen is 50-2000sccm.
In the above-mentioned phosphorus diffusion method for IGBT product, in step s3, the flow of the oxygen is 50-
1000sccm；The heating rate of the heating is 50-100 DEG C/s；First temperature is 800-1050 DEG C, the oxide layer
Thickness is less than or equal to
It is in step s 4, described to take phosphorus source in phosphorus source gas and be in the above-mentioned phosphorus diffusion method for IGBT product
POCl3, the current-carrying gas of taking in phosphorus source gas is nitrogen；The POCl3Flow be 100-1000sccm, the oxygen
Flow is 50-1000sccm；The time of the high temperature dopant processing is 1-10min.
In the above-mentioned phosphorus diffusion method for IGBT product, in step s 5, the rate of temperature fall of the cooling is 50-10
℃/s；The second temperature is 600-800 DEG C.
In the above-mentioned phosphorus diffusion method for IGBT product, in step s 6, the POCl3Flow be 100-
1000sccm, the flow of the oxygen are 50-1000sccm；The time of the low-temperature-doped processing is 1-10min.
In the above-mentioned phosphorus diffusion method for IGBT product, phosphorus doping density is in the IGBT silicon wafer of the phosphorus doping
(0.5-2)×1020cm-3, junction depth is 0.4-1 μm.
Related data in the embodiment of the present invention are obtained by following test method:
Phosphorus doping density: SRP Spreading resistance, using semilab SRP2100 spreading resistance platform.
Junction depth: SRP Spreading resistance, using semilab SRP2100 spreading resistance platform.
Embodiment
Embodiment 1
Phosphorus diffusion method flow chart of the present embodiment for IGBT product is as shown in Figure 1 comprising step S1-S7.
Step S1 cleans IGBT silicon wafer RCA, removes the impurity such as surface organic matter and particle.
IGBT silicon wafer after cleaning is placed in RTP board by step S2, and the nitrogen for being passed through 1000sccm brushes 10min；
Igbt chip is placed under nitrogen environment, IGBT silicon wafer is formed and is protected, so that the environment that IGBT forms oxidation barrier layer is stringent
Control can specify the oxidation barrier layer of growth rate by obtaining under assigned temperature and nitrogen environment in this way.
IGBT silicon wafer is warming up to 950 DEG C with the rate of 75 DEG C/s by step S3, be passed through 133sccm oxygen and
The nitrogen of 1000sccm, IGBT silicon wafer surface formed with a thickness ofOxide layer；By carrying out phosphorus to IGBT silicon wafer
Before diffusion, it is passed through oxygen in RTP board, rapid thermal oxidation (RTO) is carried out to igbt chip, in the surface shape of IGBT silicon wafer
At pre-oxidation barrier layer, the uniformity of subsequent phosphorus diffusion is promoted, the present invention uses rapid thermal oxidation, so that the pre-oxidation obtained
The thickness on barrier layer is more accurate.
Step S4 keeps silicon temperature constant, is passed through the oxygen of 133sccm and the POCL of 228sccm3, 5.6min is maintained,
High temperature phosphorus doping is carried out to the IGBT silicon wafer after pre-oxidation.High-temperature heat treatment can quickly and effectively dissolved impurity, keep impurity former
Son becomes the interstitial atom that can be fast moved from different forms.
IGBT silicon wafer after high temperature phosphorus doping is quickly cooled to 800 DEG C with the rate of 25 DEG C/s by step S5.
Step S6 is passed through the oxygen of 133sccm and the POCL of 228sccm3, 9min is kept the temperature, to after high temperature phosphorus doping
IGBT silicon wafer carries out low temperature phosphorus doping, and Low Temperature Heat Treatment is conducive to the fractional condensation gettering of impurity.
Silicon chip extracting is removed phosphorosilicate glass layer, obtains the IGBT silicon wafer of phosphorus doping by step S7, cooled to room temperature.
In IGBT silicon wafer through phosphorus doping, phosphorus doping density is 1.18 × 1020cm-3, junction depth is 0.52 μm.
Embodiment 2
Phosphorus diffusion method flow chart of the present embodiment for IGBT product is as shown in Figure 1 comprising step S1-S7.
Step S1 cleans IGBT silicon wafer RCA, removes the impurity such as surface organic matter and particle.
IGBT silicon wafer after cleaning is placed in RTP board by step S2, and the nitrogen for being passed through 1000sccm brushes 10min.
IGBT silicon wafer is warming up to 900 DEG C with the rate of 50 DEG C/s by step S3, be passed through 133sccm oxygen and
The nitrogen of 1000sccm, IGBT silicon wafer surface formed with a thickness ofOxide layer.
Step S4 keeps silicon temperature constant, is passed through the oxygen of 133sccm and the POCl of 228sccm3, 5.6min is maintained,
High temperature phosphorus doping is carried out to the IGBT silicon wafer after pre-oxidation.
IGBT silicon wafer after high temperature phosphorus doping is quickly cooled to 700 DEG C with the rate of 50 DEG C/s by step S5.
Step S6 is passed through the oxygen of 133sccm and the POCl of 228sccm3, 9min is kept the temperature, to after high temperature phosphorus doping
IGBT silicon wafer carries out low temperature phosphorus doping.
Silicon chip extracting is removed phosphorosilicate glass layer, obtains the IGBT silicon wafer of phosphorus doping by step S7, cooled to room temperature.
In IGBT silicon wafer through phosphorus doping, phosphorus doping density is 0.6 × 1020cm-3, junction depth is 0.45 μm.
Embodiment 3
Phosphorus diffusion method flow chart of the present embodiment for IGBT product is as shown in Figure 1 comprising step S1-S7.
Step S1 cleans IGBT silicon wafer RCA, removes the impurity such as surface organic matter and particle.
IGBT silicon wafer after cleaning is placed in RTP board by step S2, and the nitrogen for being passed through 1000sccm brushes 10min.
IGBT silicon wafer is warming up to 1000 DEG C with the rate of 75 DEG C/s by step S3, be passed through 133sccm oxygen and
The nitrogen of 1000sccm, IGBT silicon wafer surface formed with a thickness ofOxide layer.
Step S4 keeps silicon temperature constant, is passed through the oxygen of 133sccm and the POCl of 160sccm3, 5min is maintained, it is right
IGBT silicon wafer after pre-oxidation carries out high temperature phosphorus doping.
IGBT silicon wafer after high temperature phosphorus doping is quickly cooled to 800 DEG C with the rate of 25 DEG C/s by step S5.
Step S6 is passed through the oxygen of 133sccm and the POCl of 160sccm3, 9min is kept the temperature, to after high temperature phosphorus doping
IGBT silicon wafer carries out low temperature phosphorus doping.
Silicon chip extracting is removed phosphorosilicate glass layer, obtains the IGBT silicon wafer of phosphorus doping by step S7, cooled to room temperature.
In IGBT silicon wafer through phosphorus doping, phosphorus doping density is 0.96 × 1020cm-3, junction depth is 0.49 μm.
The method of the present invention process time is short, based on the phosphoric diffusion technology quickly heated can within 10 minutes when
Interior completion is conducive to improve productivity；Phosphorus diffusion uniformity is promoted using pre-oxidation barrier layer；High energy in high temperature section heat treatment
Photon promotes impurity dissolution diffusion, and low-temperature zone heat treatment is conducive to impurity segregation gettering, and heat budget is smaller, and it is shallow to can get phosphorus diffusion
Junction depth and the IGBT product for meeting phosphorus doping density requirement.
It should be noted that embodiment described above for explaining only the invention, is not constituted to of the invention any
Limitation.By referring to exemplary embodiments, invention has been described, it should be appreciated that word used in it is descriptive
With explanatory vocabulary, rather than limited vocabulary.The present invention can be made within the scope of the claims by regulation
Modification, and the present invention is revised in without departing substantially from scope and spirit of the present invention.Although the present invention described in it relates to
And specific method, material and embodiment, it is not intended that the present invention is limited to particular case disclosed in it, on the contrary, this hair
It is bright to can be extended to other all methods and applications with the same function.
Claims (10)
1. a kind of phosphorus diffusion method for IGBT product comprising following steps:
Step S1 cleans IGBT silicon wafer using RCA technique；
IGBT silicon wafer after cleaning is placed in fast bench heat treater, is passed through nitrogen by step S2；
Step S3, the IGBT silicon wafer being placed in fast bench heat treater is warming up to the first temperature, is passed through nitrogen and oxygen, in institute
The surface for stating IGBT silicon wafer forms oxide layer；
Step S4 is passed through oxygen and takes phosphorus source gas to oxidation-treated IGBT silicon wafer progress height at a temperature of described first
Warm doping treatment；
The IGBT silicon wafer handled through high temperature dopant is cooled to second temperature by step S5；
Step S6 is passed through oxygen and takes IGBT silicon wafer progress of the phosphorus source gas to obtaining after cooling down under the second temperature
Low-temperature-doped processing；
Step S7, will be cooling through low-temperature-doped treated IGBT silicon wafer, obtain the IGBT silicon wafer of phosphorus doping.
2. the method according to claim 1, wherein the flow of the nitrogen is 50-2000sccm.
3. method according to claim 1 or 2, which is characterized in that the flow of the oxygen is 50-1000sccm.
4. method according to any one of claim 1-3, which is characterized in that in step s3, the heating of the heating
Rate is 50-100 DEG C/s；First temperature is 800-1050 DEG C.
5. method according to any of claims 1-4, which is characterized in that in step s3, the thickness of the oxide layer
Degree is less than or equal to
6. method according to any one of claims 1-5, which is characterized in that described to take phosphorus source in phosphorus source gas and be
POCl3, the current-carrying gas of taking in phosphorus source gas is nitrogen；The POCl3Flow be 100-1000sccm.
7. method according to claim 1 to 6, which is characterized in that in step s 4, at the high temperature dopant
The time of reason is 1-10min.
8. method according to any one of claims 1-7, which is characterized in that in step s 5, the cooling of the cooling
Rate is 50-10 DEG C/s；The second temperature is 600-800 DEG C.
9. method according to claim 1 to 8, which is characterized in that in step s 6, at the low-temperature-doped
The time of reason is 1-10min.
10. method described in any one of -9 according to claim 1, which is characterized in that in the IGBT silicon wafer of the phosphorus doping
Phosphorus doping density is (0.5-2) × 1020cm-3, junction depth is 0.4-1 μm.
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Cited By (1)
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| CN111106029A (en) * | 2019-12-31 | 2020-05-05 | 深圳市锐骏半导体股份有限公司 | Monitoring method of wafer rapid thermal processing machine |
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