CN109841474B - Focusing ring, bearing device and reaction chamber - Google Patents
Focusing ring, bearing device and reaction chamber Download PDFInfo
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- CN109841474B CN109841474B CN201711204488.XA CN201711204488A CN109841474B CN 109841474 B CN109841474 B CN 109841474B CN 201711204488 A CN201711204488 A CN 201711204488A CN 109841474 B CN109841474 B CN 109841474B
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Abstract
The invention provides a focusing ring which is sleeved on the outer peripheral wall of a chuck for bearing a substrate, and comprises an upper ring part, a middle ring part and a lower ring part which are sequentially overlapped from top to bottom; the inner wall of the middle ring part is vertical to the upper surface of the lower ring part, and the inner diameter of the lower ring part is smaller than that of the middle ring part, so that the bottom edge of the substrate can be placed on the upper surface of the lower ring part, which protrudes from the inner wall of the middle ring part; an included angle between the inner wall of the upper ring part and the lower surface of the upper ring part is an acute angle, so that an equipotential line of an electric field above the upper surface of the substrate tends to be straight; the upper surface of the upper ring part is higher than the upper surface of the substrate, and the height difference between the upper surface of the upper ring part and the upper surface of the substrate is a first distance. The invention also provides a bearing device and a reaction chamber, which can simultaneously solve the problems of high etching rate and poor etching angle of the annular edge area of the substrate.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing equipment, and particularly relates to a focusing ring, a bearing device and a reaction chamber.
Background
Plasma devices are widely used in the manufacturing process of Integrated Circuits (ICs) or MEMS devices, where the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and radicals, and these active particles interact with the substrate to cause various physical and chemical reactions on the surface of the material, resulting in changes in the surface properties of the material, and not only can multiple layers of material be alternately deposited on the surface of the substrate, but also can etch multiple layers of material on the surface of the substrate.
Fig. 1a is a schematic diagram of a partial internal structure of a conventional chamber, and please refer to fig. 1a, which includes: the electrostatic chuck 1, focus ring 2, static chuck 1 adopts the fixed substrate S of electrostatic absorption mode, focus ring cover is put in the lateral wall outside of static chuck 1, and the inner ring region of focus ring 2 upper surface is formed with annular recess, and this annular recess is less than the upper surface of static chuck 1, and the annular border of substrate S is located annular recess when substrate S is located the upper surface of static chuck 1, and this annular recess can carry on spacingly to substrate S, guarantees that substrate S adsorbs on the fixed accurate position on static chuck 1.
However, in practical applications, the following problems may exist with the focus ring shown in FIG. 1 a: a high etch rate of the annular edge region of the substrate compared to the central region of the substrate may occur; for this reason, in the prior art, the height of the focus ring 2 is increased, as shown in fig. 1b, the upper surface of the focus ring 2 is higher than the upper surface of the substrate, so that although the etching rate of the annular edge region of the substrate can be reduced to some extent, there is a problem that the etching angle of the annular edge region of the substrate is deteriorated with respect to the central region of the substrate, thereby causing poor etching profile.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, provides a focusing ring, a bearing device and a reaction chamber, and can simultaneously solve the problems of high etching rate and poor etching angle of an annular edge area of a substrate.
In order to solve one of the above problems, the present invention provides a focus ring which is sleeved on an outer peripheral wall of a chuck for carrying a substrate; the focusing ring comprises an upper ring part, a middle ring part and a lower ring part which are sequentially overlapped from top to bottom; the inner wall of the middle ring part is vertical to the upper surface of the lower ring part, and the inner diameter of the lower ring part is smaller than that of the middle ring part, so that the bottom edge of the substrate can be placed on the upper surface of the lower ring part, which is convex relative to the inner wall of the middle ring part; an included angle between the inner wall of the upper ring part and the lower surface of the upper ring part is an acute angle, so that an equipotential line of an electric field above the upper surface of the substrate tends to be straight; the upper surface of the upper ring part is higher than the upper surface of the substrate, and the height difference between the upper surface of the upper ring part and the upper surface of the substrate is a first distance.
Preferably, the bottom surface of the upper ring portion is higher than the upper surface of the substrate by a second distance.
Preferably, the value range of the first distance is more than 3mm and less than or equal to 8 mm; the value range of the second distance is less than or equal to 3 mm; the value range of the acute angle is more than or equal to 30 degrees and less than or equal to 60 degrees.
Preferably, the distance between the inner wall of the middle ring part and the outer peripheral wall of the substrate is a third distance; the value range of the third distance is less than or equal to 1 mm.
Preferably, the first distance is 8 mm; the second distance is 1 mm; the third distance is 1mm, and the acute angle is 60 °.
Preferably, the first distance is 8 mm; the second distance is 2 mm; the third distance is 1mm, and the acute angle is 30 °.
Preferably, the first distance is 8 mm; the second distance is 3 mm; the third distance is 1mm, and the acute angle is 45 °.
Preferably, the focus ring is made of quartz or ceramic material.
As another technical solution, the present invention further provides a carrying device, which includes a chuck and a focus ring, wherein the focus ring is sleeved on a sidewall of the chuck, the chuck and the focus ring are used together to carry a substrate, and the focus ring is the focus ring provided above.
As another technical solution, the present invention further provides a reaction chamber, which includes a carrying device, and the carrying device adopts the carrying device provided above.
The invention has the following beneficial effects:
in the invention, the upper surface of the upper ring part of the focusing ring is higher than the upper surface of the substrate, the height difference of the upper surface and the upper surface of the focusing ring is a first distance, and the size of the first distance is related to the etching rate of the annular edge area of the substrate, so the etching rate of the annular edge area of the substrate can be reduced by setting the size of the first distance, and the equipotential line of the electric field above the upper surface of the substrate can tend to be straight by virtue of the fact that the included angle between the inner wall of the upper ring part of the focusing ring and the lower surface of the upper ring part is an acute angle, so that the phenomenon of sudden rising and changing of the electric field above the annular edge area of the substrate can not occur, and therefore, the problem of the etching angle difference of the annular edge area of the substrate can be solved. Therefore, the invention can simultaneously solve the problems of high etching rate and poor etching angle of the annular edge area of the substrate.
Drawings
FIG. 1a is a schematic diagram of a partial structure of a first conventional chamber;
FIG. 1b is a schematic diagram of a second conventional partial structure of the interior of a chamber;
FIG. 2 is a schematic partial structural view of a reaction chamber employing a focus ring and a carrier according to an embodiment of the present invention;
FIG. 3 is a simulation of electric field equipotential lines over a substrate in accordance with the prior art;
FIG. 4 is a first simulation of electric field equipotential lines above a substrate in accordance with the present invention;
FIG. 5 is a second simulated view of electric field equipotential lines above a substrate in accordance with the present invention;
FIG. 6 is a third simulation of electric field equipotential lines over a substrate in accordance with the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the focus ring, the carrying device and the reaction chamber provided by the present invention are described in detail below with reference to the accompanying drawings.
Before describing the focus ring provided by the embodiment of the present invention, the reason why the technical problem of the difference of the etching angle of the annular edge region of the substrate exists in the prior art is firstly analyzed: specifically, the upper surface of the focus ring is set to be higher than the upper surface of the substrate, for example, 8mm, and the distance between the sidewall of the focus ring and the sidewall of the substrate is set to be 1mm, in which case, the simulation result of the electric field above the substrate is shown in fig. 3, and the black arrow in fig. 3 indicates the bombardment direction of the plasma, i.e., the direction toward the substrate, as can be directly seen from fig. 3: the electric field equipotential line of the substrate annular edge area has steep rising and abrupt change, so that the plasma motion track in the area is changed, and the motion track of the plasma cannot be vertical to the upper surface of the substrate, thereby causing the annular edge area to have poor etching angle.
Example 1
FIG. 2 is a schematic partial structural view of a reaction chamber employing a focus ring and a carrier according to an embodiment of the present invention; referring to fig. 2, an embodiment of the invention provides a focus ring 10, which is disposed on an outer peripheral wall of a chuck 20 for carrying a substrate S, wherein the focus ring 10 includes an upper ring portion 101, a middle ring portion 102 and a lower ring portion 103, which are sequentially stacked from top to bottom; the inner wall of the middle ring part 102 is vertical to the upper surface of the lower ring part 103, and the inner diameter of the lower ring part 103 is smaller than that of the middle ring part 102, so that the bottom edge of the substrate S can be placed on the upper surface of the lower ring part 103, which is convex relative to the inner wall of the middle ring part 102; the included angle between the inner wall of the upper ring part 101 and the lower surface of the upper ring part 101 is an acute angle a, which is compared with the focus ring shown in fig. 1b, the space defined by the upper part of the focus ring 10 is enlarged, so that the equipotential line of the electric field above the upper surface of the substrate S tends to be straight, and the electric field above the annular edge region of the substrate does not rise suddenly and suddenly, therefore, the problem of poor etching angle of the annular edge region of the substrate can be solved.
The upper surface of the upper ring portion 101 of the focus ring 10 is higher than the upper surface of the substrate S by a first distance h1, and the first distance h1 is related to the etching rate of the annular edge region of the substrate S, so that the etching rate of the annular edge region of the substrate S can be reduced by setting the first distance h 1.
From the above, the focus ring provided by the invention can simultaneously solve the problems of high etching rate and poor etching angle of the annular edge area of the substrate.
Preferably, the bottom surface of the upper ring portion is higher than the upper surface of the substrate S by a second distance h2, which is good for reducing the etching rate of the annular edge region of the substrate.
Further preferably, the value range of the first distance h1 is greater than 3mm and less than or equal to 8 mm; the value range of the second distance h2 is less than or equal to 3 mm; the value range of the acute angle A is more than or equal to 30 degrees and less than or equal to 60 degrees, and good process effect can be obtained.
In addition, the distance between the inner wall of the middle ring part and the outer peripheral wall of the substrate S is a third distance h 3; the value range of the third distance h3 is less than or equal to 1mm, and under the condition of the parameter, a good process effect can be obtained.
The focus ring provided by embodiments of the present invention is verified below in conjunction with fig. 4-6.
First, set the first distance h1 to 8 mm; the second distance h2 is 1 mm; the third distance h3 is 1mm, the acute angle a is 60 °, and the simulation result of the equipotential lines of the electric field is shown in fig. 4.
Second, the first distance h1 is set to 8 mm; the second distance h2 is 2 mm; the third distance h3 is 1mm, the acute angle a is 30 °, and the simulation result of the equipotential lines of the electric field is shown in fig. 5.
Third, the first distance h1 is set to 8 mm; the second distance h2 is 3 mm; the third distance h3 is 1mm, the acute angle a is 45 °, and the simulated equipotential simulation diagram of the electric field is shown in fig. 6.
Comparing FIGS. 4-6, respectively, with FIG. 3, it can be seen directly and unambiguously that: the equipotential lines of the electric field above the upper surface of the substrate S are distributed straightly without rising and sudden changes, so that the problem of poor etching angle of the annular edge area of the substrate S can be solved.
The focusing ring provided by the embodiment is made of quartz or ceramic material. Of course, other insulating materials may be used in practical applications.
Example 2
Referring to fig. 2, the carrier device includes a chuck 20, a focus ring 10, a base ring 30 and a chuck base 40, wherein the chuck 20 and the focus ring are used together to carry a substrate, and specifically, the chuck 20 is preferably an electrostatic chuck to fix the substrate by electrostatic adsorption; the focus ring 10 is disposed on the side wall of the chuck 20, and the focus ring 10 is the focus ring provided in embodiment 1.
The chuck 20 is installed on the chuck base 40, the base ring 30 is sleeved on the lower half part of the chuck 20 and the outer side of the side wall of the chuck base 40, the focusing ring 10 is sleeved on the upper half part, and the focusing ring is positioned on the base ring 30.
The assembly process of the bearing device comprises the following steps: firstly, the chuck 20 is installed on the chuck base 40, then the base ring 30 is sleeved on the lower half part of the chuck 20 and the outer side of the side wall of the chuck base 40, the gaps between the base ring and the base ring are the same at all positions in the circumferential direction, then the focusing ring is installed on the base ring 30, and the gaps between the focusing ring 10 and the side wall of the chuck 20 at all positions in the circumferential direction are the same; the substrate S is adsorbed on the upper surface of the chuck 20 by electrostatic attraction.
The bearing device provided by the embodiment of the invention adopts the focusing ring provided by the embodiment 1, so that the process quality can be improved.
Example 3
An embodiment of the present invention further provides a reaction chamber, as shown in fig. 2, including a carrying device, where the carrying device provided in embodiment 2 is adopted, and the carrying device is disposed in the chamber.
The reaction chamber provided by the embodiment of the invention can improve the process quality by adopting the bearing device provided by the embodiment 2.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A focusing ring is sleeved on the outer peripheral wall of a chuck for bearing a substrate, and is characterized by comprising an upper ring part, a middle ring part and a lower ring part which are sequentially overlapped from top to bottom;
the inner wall of the middle ring part is vertical to the upper surface of the lower ring part, and the inner diameter of the lower ring part is smaller than that of the middle ring part, so that the bottom edge of the substrate can be placed on the upper surface of the lower ring part, which is convex relative to the inner wall of the middle ring part;
an included angle between the inner wall of the upper ring part and the lower surface of the upper ring part is an acute angle, so that an equipotential line of an electric field above the upper surface of the substrate tends to be straight;
the upper surface of the upper ring part is higher than the upper surface of the substrate, and the height difference between the upper surface of the upper ring part and the upper surface of the substrate is a first distance;
the bottom surface of the upper ring part is higher than the upper surface of the substrate, and the height difference between the bottom surface of the upper ring part and the upper surface of the substrate is a second distance.
2. The focus ring of claim 1, wherein the first distance has a value in a range of greater than 3mm and less than or equal to 8 mm;
the value range of the second distance is less than or equal to 3 mm;
the value range of the acute angle is more than or equal to 30 degrees and less than or equal to 60 degrees.
3. The focus ring of claim 2, wherein a distance between an inner wall of the middle ring portion and an outer circumferential wall of the substrate is a third distance;
the value range of the third distance is less than or equal to 1 mm.
4. The focus ring of claim 3, wherein the first distance is 8 mm; the second distance is 1 mm; the third distance is 1mm, and the acute angle is 60 °.
5. The focus ring of claim 3, wherein the first distance is 8 mm; the second distance is 2 mm; the third distance is 1mm, and the acute angle is 30 °.
6. The focus ring of claim 3, wherein the first distance is 8 mm; the second distance is 3 mm; the third distance is 1mm, and the acute angle is 45 °.
7. The focus ring of claim 1, wherein the focus ring is made of quartz or a ceramic material.
8. A carrier device comprising a chuck and a focus ring, wherein the focus ring is sleeved on the side wall of the chuck, and the chuck and the focus ring are used together for carrying a substrate, and the focus ring is the focus ring as claimed in any one of claims 1 to 7.
9. A reaction chamber comprising a carrier, wherein the carrier is the carrier of claim 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711204488.XA CN109841474B (en) | 2017-11-27 | 2017-11-27 | Focusing ring, bearing device and reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711204488.XA CN109841474B (en) | 2017-11-27 | 2017-11-27 | Focusing ring, bearing device and reaction chamber |
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| CN109841474A CN109841474A (en) | 2019-06-04 |
| CN109841474B true CN109841474B (en) | 2021-08-13 |
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| CN201711204488.XA Active CN109841474B (en) | 2017-11-27 | 2017-11-27 | Focusing ring, bearing device and reaction chamber |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885690B (en) * | 2019-11-29 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN114300334B (en) * | 2021-11-22 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
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| CN104701126A (en) * | 2013-12-10 | 2015-06-10 | 东京毅力科创株式会社 | Plasma processing apparatus and focus ring |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
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2017
- 2017-11-27 CN CN201711204488.XA patent/CN109841474B/en active Active
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| CN104701126A (en) * | 2013-12-10 | 2015-06-10 | 东京毅力科创株式会社 | Plasma processing apparatus and focus ring |
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