CN109830936A - A kind of current foldback circuit solving PTC breakdown - Google Patents
A kind of current foldback circuit solving PTC breakdown Download PDFInfo
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- CN109830936A CN109830936A CN201910141593.6A CN201910141593A CN109830936A CN 109830936 A CN109830936 A CN 109830936A CN 201910141593 A CN201910141593 A CN 201910141593A CN 109830936 A CN109830936 A CN 109830936A
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Abstract
The invention discloses a kind of current foldback circuits of solution PTC breakdown; it is characterized by comprising the IGBT single tube driving circuits for ptc heater; the IGBT single tube driving circuit includes IGBT, IGBT driving chip U1 and mutual inductor L; the primary one end connection power supply and ptc heater of the mutual inductor L; the other end of the primary connects the collector of the IGBT; secondary one end of the mutual inductor L is connected to the enable end of the IGBT driving chip U1, the other end ground connection of the secondary by amplifying circuit, filter circuit and voltage regulator circuit.The present invention greatly reduces the turn-off time of IGBT, the base stage of IGBT can be turned off in 2US when PTC punctures, so as to avoid IGBT because PTC puncture due to overcurrent failure probability, it can be improved the stability and service life of electronic product, circuit structure is simple, reduces production cost.
Description
Technical field
The present invention relates to a kind of current foldback circuits of solution PTC breakdown, belong to current protection technology field.
Background technique
Currently, IGBT overcurrent is relatively conventional the case where failure, in new-energy automobile field, PTC breakdown protection is by increasingly
More depots are considered as standard configuration function, and domestic single tube IGBT protection is generallyd use is adopted by going here and there the resistance in the circuit IGBT
Sample, when sampled voltage turns off the pole G of IGBT by hardware to reach protection IGBT single tube purpose, resistance sampling more than valve value
Although the response time is fast, when sampling to high pressure, the clutter that sampled signal generates is more, more numb to small signal process
It is tired, it will cause wrong report sometimes.Aforesaid way does not change size of current in the circuit IGBT, lacks prophylactic function, furthermore, due to market
The universal overcurrent of the IGBT single tube of upper sale bears the time less than 10US, if IGBT cannot be turned off in time, IGBT is very big to be led
Failure in the logical time, if the electric current bigger damage time can also become smaller.
Summary of the invention
The purpose of the present invention is overcoming shortcoming in the prior art, a kind of overcurrent protection of solution PTC breakdown is provided
Circuit, to solve the problems, such as above-mentioned background technique.
In order to solve the above technical problems, the present invention is solved by following technical proposals:
A kind of current foldback circuit solving PTC breakdown, including the IGBT single tube driving circuit for ptc heater, institute
State primary one end company that IGBT single tube driving circuit includes IGBT, IGBT driving chip U1 and mutual inductor L, the mutual inductor L
Power supply and ptc heater are connect, the other end of the primary connects the collector of the IGBT, secondary one of the mutual inductor L
End is connected to the enable end of the IGBT driving chip U1 by amplifying circuit, filter circuit and voltage regulator circuit, the secondary
Other end ground connection.
Further, the amplifying circuit includes resistance R3, capacitor C3 and triode Q1, and the filter circuit includes two poles
Pipe D3, capacitor C1, capacitor C2, the voltage regulator circuit include zener diode Z1 and resistance R2, the secondary pole of the mutual inductor
One end connects the anode of capacitor C1, one end of capacitor C2 and zener diode Z1, two pole of pressure stabilizing by diode D3 simultaneously
The anode of pipe Z1 connects one end of resistance R2 and resistance R3, the other end while connecting triode Q1 base of the resistance R3 simultaneously
Pole, the collector of the triode connect the enable end of the IGBT driving chip U1, the capacitor C1, capacitor C2, resistance R2,
The other end of capacitor C3 and the emitter ground connection of triode.
Further, the collector of the IGBT is also connected with saturation voltage detection circuit, the saturation voltage detection electricity
Road includes diode D2, resistance R1 and saturation voltage detection chip, and the cathode of the diode D2 connects the current collection of the IGBT
The anode of pole, diode D2 detects foot by the saturation voltage that circuit R1 connects the IGBT driving chip U1.
Further, the base stage of the IGBT simultaneously connect capacitor C4, one end of resistance R4, TVS diode anode and
IGBT controls chip, the capacitor C4, the other end of resistance R4 and the plus earth of TVS diode.
It further, further include interface J1 and interface J2, the anode and ptc heater of the interface J1 connection high voltage power supply
Anode, the cathode of interface J2 connection high voltage power supply and the cathode of ptc heater, one end of mutual inductor L primary is connected to described
One end of interface J2, mutual inductor L primary are connected to the interface J1 by diode D1.
Wherein the one of model NCV5700,1ED020FA2, NCV57001, fod8316 of the IGBT driving chip U1
Kind.
The present invention have the following advantages that compared with prior art and the utility model has the advantages that
1. the present invention is for the IGBT overcurrent protection of PTC breakdown, first is that passing through IGBT driving chip U1 real-time detection IGBT
The end the CE voltage of single tube, the end CE voltage can be got higher when overcurrent, and when reaching valve value, IGBT driving chip U1 controls the base of IGBT
Pole stops output；The protection of IGBT single tube is carried out to the circuit IGBT second is that increasing inductance or mutual inductor, current break can be prevented, prolonged
Long IGBT bears the time of PTC breakdown, and IGBT is protected by the heavy current impact of long period, not reduce probability of damage.
After 2. the present invention is by increasing inductance or mutual inductor in the CE end loop of IGBT, when current break, electric current becomes
Chip identification can either be controlled by IGBT by changing signal, further decrease the risk that IGBT is punctured by high current, current changing signal
The control signal that can be used as IGBT control chip enable end again, improves the stability and service life of electronic product, circuit
Structure is simple, reduces manufacturing cost.
3. the present invention reduces the turn-off time of IGBT, the base stage of IGBT can be turned off in 2US in PTC breakdown, from
And avoid IGBT because PTC breakdown due to overcurrent fail the phenomenon that.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a kind of circuit diagram of the current foldback circuit of solution PTC breakdown.
Specific embodiment
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Specific implementation process of the invention is as follows:
A kind of current foldback circuit solving PTC breakdown as shown in Figure 1:, including the IGBT single tube drive for ptc heater
Dynamic circuit, the IGBT single tube driving circuit includes IGBT, IGBT driving chip U1 and mutual inductor L, the primary of the mutual inductor L
One end connection power supply and ptc heater, the other end of the primary connect the collector of the IGBT, the mutual inductor L's
Secondary one end is connected to the enable end of the IGBT driving chip U1, institute by amplifying circuit, filter circuit and voltage regulator circuit
State secondary other end ground connection.
The amplifying circuit includes resistance R3, capacitor C3 and triode Q1, and the filter circuit includes diode D3, capacitor
C1, capacitor C2, the voltage regulator circuit include zener diode Z1 and resistance R2, and one end of the secondary pole of the mutual inductor passes through two
Pole pipe D3 connects the anode of capacitor C1, one end of capacitor C2 and zener diode Z1, the anode of the zener diode Z1 simultaneously
One end of resistance R2 and resistance R3, the other end while connecting triode Q1 base stage of the resistance R3, the three-level are connected simultaneously
The collector of pipe connects the enable end of the IGBT driving chip U1, the capacitor C1, capacitor C2, resistance R2, capacitor C3 it is another
The emitter of one end and triode ground connection.
In the present embodiment, the main function of mutual inductor L in circuit is the current break prevented in the circuit IGBT, another
A effect is the secondary by the current signal in the circuit IGBT by magnetic core feedback to mutual inductor L, diode D3, capacitor C1 and electricity
Hold C2 and form filter circuit, carries out rectifying and wave-filtering processing for the electric current to feedback, the secondary of mutual inductor L is whole by diode D3
Direct current signal is flowed into, direct current signal is filtered by capacitor C1 and C2, and filtered voltage signal is greater than zener diode Z1's
When pressure stabilizing value, zener diode Z1 can be breakdown, is at this time high voltage on resistance R2, and triode Q1 is connected by resistance R3.
The amplifying circuit of resistance R3, capacitor C3 and triode Q1 composition is used to control enable end or the PWM input pin of IGBI driving chip,
Reach shutdown IGBT purpose, so that IGBT be protected not punctured by moment.
In the present embodiment, the model of the IGBT driving chip U1 be preferably NCV5700,1ED020FA2, NCV57001,
The one of which of fod8316, the IGBT driving chip U1 have saturation voltage detection function, and the collector of IGBT is connected with full
And voltage detecting circuit, the saturation voltage detection circuit include the cathode company of diode D2 and resistance R1, the diode D2
The collector of the IGBT is connect, the anode of diode D2 is examined by the saturation voltage that resistance R1 connects the IGBT driving chip U1
Survey foot.
The base stage of the IGBT connects capacitor C4, one end of resistance R4, the anode of TVS diode and IGBT control core simultaneously
Piece, the capacitor C4, the other end of resistance R4 and the plus earth of TVS diode, capacitor C4 are used for the base signal to IGBT
It carries out processing and influences the turn-on time of IGBT with base resistance.
It include interface J1 and interface J2 in the circuit of the present embodiment, the anode and PTC of interface J1 connection high voltage power supply add
The anode of hot device, the cathode of interface J2 connection high voltage power supply and the cathode of ptc heater, one end of mutual inductor L primary is connected to
The interface J2, and the interface J1 is connected to by diode D1, diode D1 is to store stream diode, for discharging mutual inductor
The inverse electromotive force that L is generated in circuit when switching.
In the circuit of the prior art, high pressure is generated when the both ends moment of ptc heater or load short circuits, IGBT, due to
Miller capacitance factor inside IGBT, IGBT, which has, holds up column phenomenon, if IGBT is in off state, switching speed and frequency meeting
IGBT is influenced, if the turn-off time is greater than 10US, IGBT is likely to occur failure blasted pipe phenomenon.The present invention is regarding to the issue above
Circuit is improved, and improved circuit is tested for several times, is learnt by test result: improved circuit
In, when ptc heater or breakdown load, high current is added to the both ends IGBT by mutual inductor L, since mutual inductor is with cannot
The characteristic of mutation, therefore, IGBT are not in instantaneous large-current phenomenon, and when current is excessive, L grade of mutual inductor can sense greatly
Electric current, when current value reaches setting value, the enabled foot or PWM of triode Q1 output low-voltage shutdown IGBT driving chip U1 is defeated
Enter foot, to protect IGBT single tube.By test, when PTC punctures, the turn-off speed of IGBT base stage is significantly improved, can be in 2US
Interior shutdown, turn-off time are substantially lower than the universal overcurrent of IGBT and bear the time, and the overcurrent of IGBT can effectively be avoided to fail.It incite somebody to action this
After the circuit of invention is applied to related electronic products, the work of electronic product can be made more stable, electronics can be effectively improved
The performance and service life of product simplify circuit structure in the case where not increasing circuit cost, have good practical
Property.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (6)
1. a kind of current foldback circuit for solving PTC breakdown, it is characterised in that: including the IGBT single tube drive for ptc heater
Dynamic circuit, the IGBT single tube driving circuit includes IGBT, IGBT driving chip U1 and mutual inductor L, the primary of the mutual inductor L
One end connection power supply and ptc heater, the other end of the primary connect the collector of the IGBT, the mutual inductor L's
Secondary one end is connected to the enable end of the IGBT driving chip U1, institute by amplifying circuit, filter circuit and voltage regulator circuit
State secondary other end ground connection.
2. a kind of current foldback circuit for solving PTC breakdown according to claim 1, it is characterised in that: the amplification electricity
Road includes resistance R3, capacitor C3 and triode Q1, and the filter circuit includes diode D3, capacitor C1, capacitor C2, the pressure stabilizing
Circuit includes zener diode Z1 and resistance R2, and one end of the mutual inductor time pole connects capacitor by diode D3 simultaneously
The anode of the anode of C1, one end of capacitor C2 and zener diode Z1, the zener diode Z1 connects resistance R2 and electricity simultaneously
Hinder one end of R3, the other end of resistance R3 connecting triode Q1 base stage simultaneously, described in the collector connection of the triode
The enable end of IGBT driving chip U1, the transmitting of the capacitor C1, capacitor C2, resistance R2, the other end of capacitor C3 and triode
Pole ground connection.
3. a kind of current foldback circuit for solving PTC breakdown according to claim 2, it is characterised in that: the IGBT's
Collector is also connected with saturation voltage detection circuit, and the saturation voltage detection circuit includes diode D2 and resistance R1, described
The cathode of diode D2 connects the collector of the IGBT, and the anode of diode D2 drives core by the circuit R1 connection IGBT
The saturation voltage of piece U1 detects foot.
4. a kind of current foldback circuit for solving PTC breakdown according to claim 1, it is characterised in that: the IGBT's
Base stage connects capacitor C4, one end of resistance R4, the anode of TVS diode and IGBT control chip, the capacitor C4, resistance simultaneously
The other end of R4 and the plus earth of TVS diode.
5. a kind of current foldback circuit for solving PTC breakdown according to claim 1, it is characterised in that: further include interface
J1 and interface J2, the anode of the interface J1 connection high voltage power supply and the anode of ptc heater, interface J2 connection high voltage power supply
The cathode of cathode and ptc heater, one end of mutual inductor L primary are connected to the interface J2, and one end of mutual inductor L primary passes through
Diode D1 is connected to the interface J1.
6. a kind of current foldback circuit for solving PTC breakdown according to claim 1, it is characterised in that: the IGBT drives
The one of which of model NCV5700,1ED020FA2, NCV57001, fod8316 of dynamic chip U1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910141593.6A CN109830936A (en) | 2019-02-26 | 2019-02-26 | A kind of current foldback circuit solving PTC breakdown |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910141593.6A CN109830936A (en) | 2019-02-26 | 2019-02-26 | A kind of current foldback circuit solving PTC breakdown |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112994423A (en) * | 2021-02-25 | 2021-06-18 | 湖南凌翔磁浮科技有限责任公司 | Bridge type field effect transistor driving circuit and electromagnetic coil controller |
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| CN202261029U (en) * | 2011-09-19 | 2012-05-30 | 深圳市共进电子股份有限公司 | Switch power supply circuit with overvoltage protection |
| CN202872324U (en) * | 2012-11-09 | 2013-04-10 | 北京经纬恒润科技有限公司 | Protection circuit and switching power supply with same |
| CN202888788U (en) * | 2012-11-08 | 2013-04-17 | 北京经纬恒润科技有限公司 | Overcurrent protection circuit and switching power supply |
| CN103475331A (en) * | 2012-06-08 | 2013-12-25 | 杭州三花研究院有限公司 | Electric heater protection device and electric heater |
| CN204290696U (en) * | 2014-11-28 | 2015-04-22 | 宁波大学 | A kind of IGBT drive circuit |
| CN207150845U (en) * | 2017-05-26 | 2018-03-27 | 深圳乐桥电子有限公司 | A kind of band saturation voltage detection PTC control circuits |
-
2019
- 2019-02-26 CN CN201910141593.6A patent/CN109830936A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202261029U (en) * | 2011-09-19 | 2012-05-30 | 深圳市共进电子股份有限公司 | Switch power supply circuit with overvoltage protection |
| CN103475331A (en) * | 2012-06-08 | 2013-12-25 | 杭州三花研究院有限公司 | Electric heater protection device and electric heater |
| CN202888788U (en) * | 2012-11-08 | 2013-04-17 | 北京经纬恒润科技有限公司 | Overcurrent protection circuit and switching power supply |
| CN202872324U (en) * | 2012-11-09 | 2013-04-10 | 北京经纬恒润科技有限公司 | Protection circuit and switching power supply with same |
| CN204290696U (en) * | 2014-11-28 | 2015-04-22 | 宁波大学 | A kind of IGBT drive circuit |
| CN207150845U (en) * | 2017-05-26 | 2018-03-27 | 深圳乐桥电子有限公司 | A kind of band saturation voltage detection PTC control circuits |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112994423A (en) * | 2021-02-25 | 2021-06-18 | 湖南凌翔磁浮科技有限责任公司 | Bridge type field effect transistor driving circuit and electromagnetic coil controller |
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