CN109830191A - A kind of transfer method of dot structure and micro- light emitting diode - Google Patents
A kind of transfer method of dot structure and micro- light emitting diode Download PDFInfo
- Publication number
- CN109830191A CN109830191A CN201910331140.XA CN201910331140A CN109830191A CN 109830191 A CN109830191 A CN 109830191A CN 201910331140 A CN201910331140 A CN 201910331140A CN 109830191 A CN109830191 A CN 109830191A
- Authority
- CN
- China
- Prior art keywords
- micro
- metal layer
- light emitting
- emitting diode
- bonding metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of dot structure and the transfer methods of micro- light emitting diode, belong to display panel manufacturing field, the invention discloses a kind of dot structures, comprising: criss-cross data line and scan line, the power supply line parallel with data line, by scan line, data line and power supply line, which enclose, sets the pixel region to be formed and the capacitance electrode in pixel region, it further include and the bonding metal layer that with capacitance electrode connect interior positioned at pixel region and the alignment mark being arranged in bonding metal layer, alignment mark is arranged on bonding metal layer the present invention, alignment operation is carried out by micro- light emitting diode and alignment mark, it can either guarantee the aligning accuracy in micro- light emitting diode transfer process, the driving of micro- light emitting diode is not influenced again simultaneously, and any other structure is not increased, existing manufacturing process is not changed, no It will increase new process flow, realize production economy.
Description
Technical field
The present invention relates to the transfer sides of a kind of dot structure more particularly to a kind of dot structure and micro- light emitting diode
Method.
Background technique
Currently, the transfer techniques of micro- light emitting diode (Micro LED) are different due to the difference of the size of panel, such as Fig. 1
It is shown the schematic diagram of micro- light-emitting-diode panel in the prior art, for micro- light-emitting-diode panel 1 of small size, shifts base
Micro- light emitting diode (not shown) disposably all transfer completions in all pixels region 8 may be implemented in plate (not shown), therefore
For micro- light-emitting-diode panel 1 of small size, it is only necessary to which in viewing area, 2 periphery setting alignment mark 3 be can be realized micro-
The accurate contraposition of light emitting diode, this scheme are suitble on the wearable device of small size, are not appropriate for the micro- light-emitting diodes of large scale
Pipe display panel.
LED display panel micro- for large scale, there are three types of the technical solutions for solving the problems, such as this at present: the first
Scheme is to increase the size of transfer backboard as far as possible, realizes that the micro- light emitting diode of large scale is aobvious by once transfer as far as possible
Show the production of panel, the program can theoretically reduce transfer number really, and promote transfer precision, but shift backboard
Size is bigger, and the stability and control accuracy requirement to transfer equipment will be higher, and it is oversized to shift backboard, will lead to
Bending deformation, so that the position for eventually leading to micro- light emitting diode deviates, the homogeneity of display is deteriorated, and large scale turns
Move backboard influenced by outside environmental elements it is bigger, temperature humidity all can to large-sized transfer backboard generation influence of crust deformation, from
And finally influence the display effect of display panel.
Second method is directly alignment metallization stack to be formed using sacrificial patterned and in etching p-n diode layer
Period will be patterned into sacrificial layer as etching stop layer to form multiple micro- p-n diodes, the program using by the way of etching into
Row, etching technics can generate certain tolerance, and etching equally produces the combination of micro- light emitting diode and display panel higher
Requirement, if can be fallen off in etching process in conjunction with not close, meanwhile, using this scheme, micro- light emitting diode hair
Life falls off, and the program can not secondary reparation.
Scheme is to pass through repeatedly to shift directly on the micro- light emitting diode backboard of large scale, and finally produce big in third
The micro- light-emitting-diode panel of size, the program is a kind of scheme most economical at present, but due to repeatedly to be shifted, this is just
Very high requirement is proposed to the micro- light emitting diode aligning accuracy shifted every time, it is in the prior art, general using setting groove
It is shifted with the mode of protrusion, but in this process, the precision of positioning still not can guarantee, and manufacture groove
It will increase manufacturing cost with protrusion.
Summary of the invention
To solve the above-mentioned problems, the invention discloses a kind of dot structure, manufacturing method of array base plate and micro- luminous two
The transfer method of pole pipe, the program forms alignment mark in the dot structure of display panel, during transfer, by right
Position label carries out alignment operation with micro- light emitting diode, realizes that aligning accuracy is promoted, and do not increase any other structure, no
Change existing manufacturing process, not will increase new process flow, realizes production economy.
A kind of dot structure comprising: criss-cross data line and scan line, the power supply line parallel with data line, by
Scan line, data line and power supply line, which enclose, sets the pixel region to be formed and the capacitance electrode in pixel region, further includes position
In the bonding metal layer being connect in pixel region and with capacitance electrode and the alignment mark being arranged in bonding metal layer.
It preferably, further include first film transistor switch and the second thin film transistor switch in the pixel region,
First drain electrode of first film transistor switch is connect with capacitance electrode, and the second of the second thin film transistor switch drains and be bonded
Metal layer connection.
Preferably, the first grid of the first film transistor switch is connect with scan line, and first film transistor is opened
The first source electrode closed is connect with data line；The second grid of second thin film transistor switch is connect with capacitance electrode, the second film
Second source electrode of transistor switch is connect with power supply line.
Preferably, the capacitance electrode includes the first electricity with the first grid same layer setting of first film transistor switch
Pole, the second electrode for the same layer setting that drains with the first of first film transistor switch and setting are in first electrode and the second electricity
Insulating layer between pole.
Preferably, the first grid same layer of the bonding metal layer and first film transistor switch is arranged；Or it is described
First source electrode same layer of bonding metal layer and first film transistor switch is arranged；Or the first of first film transistor switch
The first grid and the first source of grid and the setting of the first source electrode same layer and the bonding metal layer and first film transistor switch
The setting of pole same layer.
Preferably, the bonding metal layer is hollow structure, and the alignment mark is solid metallic structure, the register guide
The center that note is located at bonding metal layer extends to the frame of bonding metal layer and connect with bonding metal layer.
Preferably, the bonding metal layer is solid construction, and the alignment mark is to be formed in bonding metal layer centre bit
The groove structure set.
Preferably, the bonding metal layer size be 45um-55um*45um-55um, the bonding metal layer by titanium, nickel,
Copper, gold or its alloy are constituted.
The invention also discloses a kind of manufacturing method of array base plate using above-mentioned dot structure, comprising the following steps:
The first step forms the first metal layer on substrate, by exposing and etch, forms the scan line being laterally arranged, first thin
First grid, the grid of the second thin film transistor switch and the first electrode of capacitance electrode of film transistor switch；
Second step forms insulating film layer on the basis of the first step；
Third step forms semiconductor layer and second metal layer on the basis of second step, by expose and etching formed it is longitudinally disposed
Data line and power supply line, the scan line formed in data line and power supply line and the first step surrounds pixel region, first
First source electrode of thin film transistor switch and the first drain electrode, the second source electrode of the second thin film transistor switch and the second drain electrode, electricity
Hold electrode second electrode and in pixel region and with capacitance electrode second electrode connection bonding metal layer, be bonded
Alignment mark is formed in metal layer.
The invention also discloses a kind of transfer methods that micro- light emitting diode is carried out using above-mentioned dot structure, including with
Lower step:
Transfer backboard is moved to above carrier substrate by the first step, and micro- light emitting diode in transfer head and carrier substrate carries out
Contraposition；
Second step, transfer head adsorb micro- light emitting diode；
Third step, transfer head pick up micro- light emitting diode；
4th step, shifts backboard mobilization head and micro- light emitting diode is moved to above substrate；
5th step adjusts the position of micro- light emitting diode by carrying out alignment operation to micro- light emitting diode and alignment mark；
6th step, micro- light emitting diode are bonded with bonding metal layer；
7th step, transfer head are separated with micro- light emitting diode.
Further, in five step of step the, alignment operation is optical registration, it is specific the following steps are included:
It takes pictures in same position to dot structure and transfer head；Take two photos are sent to processor to count
It calculates, the offset distance and angle of the alignment mark of micro- light emitting diode and bonding metal layer is calculated, according to the offset distance of calculating
And angle, mobile transfer head adjust the position of micro- light emitting diode, correct offset, recycle above-mentioned steps, until completion pair
Position.
Compared with prior art, alignment mark is arranged on bonding metal layer the present invention, by micro- light emitting diode and
Alignment mark carries out alignment operation, can either guarantee the aligning accuracy in micro- light emitting diode transfer process, while not influencing again
The driving of micro- light emitting diode, and do not increase any other structure, do not change existing manufacturing process, not will increase new
Production economy is realized in process flow.
Detailed description of the invention
Fig. 1 is the schematic diagram of micro- light-emitting-diode panel in the prior art；
Fig. 2 is the first embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 3 is the second embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 4 is the 3rd embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 5 is the fourth embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 6 is the 5th embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 7 is the sixth embodiment schematic diagram of the dot structure of the micro- light emitting diode of the present invention；
Fig. 8 is the schematic side view of the micro- light emitting diode bond wire of the first, second, third embodiment of the invention part；
Fig. 9 is the present invention the four, the 5th, the schematic side view of sixth embodiment micro- light emitting diode bond wire part；
Figure 10 is the micro- circuit of LED figure of the present invention；
Figure 11 is one of the transfer method step of the micro- light emitting diode of present invention schematic diagram；
Figure 12 is two schematic diagrames of the transfer method step of the micro- light emitting diode of the present invention；
Figure 13 is three schematic diagrames of the transfer method step of the micro- light emitting diode of the present invention；
Figure 14 is four schematic diagrames of the transfer method step of the micro- light emitting diode of the present invention；
Figure 15 is six schematic diagrames of the transfer method step of the micro- light emitting diode of the present invention；
Figure 16 is seven schematic diagrames of the transfer method step of the micro- light emitting diode of the present invention.
Reference signs list: the micro- light-emitting-diode panel of 1-, the viewing area 2-, 3- alignment mark, 4- shift backboard, 5- transfer
Head, the micro- light emitting diode of 6-, 7- carrier substrate, 8- pixel region, 9- bonding metal layer, 10- data line, 11- scan line, 12-
Power supply line, 13- substrate, 14- first film transistor switch, the second thin film transistor switch of 15-, 16- capacitance electrode, 17- the
One grid, the first source electrode of 18-, 19- first drain, 20- second grid, the second source electrode of 21-, and 22- second drains, the first electricity of 23-
Pole, 24- second electrode.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
Embodiment:
Fig. 2-7 is the micro- LED pixel structure schematic diagram of the present invention, and Fig. 8-9 is the micro- light emitting diode bond wire of the present invention
Partial schematic side view, Figure 10 are the micro- circuit of LED figure of the present invention.
As shown in Fig. 2, a kind of dot structure includes longitudinally disposed data line 10 and power supply line 12 on the substrate 13, transverse direction
Setting on the substrate 13 and with data line 10 and the vertically disposed scan line 11 of scan line 12, by scan line 11, data line 10 and
Pixel region 8 that power supply line 12 is formed in a crisscross manner, the capacitance electrode 16 in pixel region 8, be located in pixel region 8 and
The first film transistor switch 14 connecting with capacitance electrode 16 and the second thin film transistor switch 15 are located at pixel region 8
The interior and bonding metal layer 9 being connect with capacitance electrode 16 and the alignment mark 3 in bonding metal layer 9.Wherein, power supply line
12 are arranged in parallel with data line 10, and the first grid 20 of first film transistor switch 14 is connect with scan line 11, the first film
First source electrode 21 of transistor switch 14 is connect with data line 10, the first drain electrode 22 of first film transistor switch 14 and capacitor
Electrode 16 connects.
The second grid 17 of second thin film transistor switch 15 is connect with capacitance electrode 16, the second thin film transistor switch 15
The second source electrode 18 connect with power supply line 12, the second drain electrode of the second thin film transistor switch 15 19 is connect with bonding metal layer 9.
Capacitance electrode 16 include with 20 same layer of first grid of first film transistor switch 14 setting first electrode 23,
With the second electrode 24 of the first of first film transistor switch 14 the drain electrode 22 same layers setting and setting in first electrode 23 and
Insulating layer (not shown) between second electrode 24, the first electrode 23 of capacitance electrode 16 are all connected with first film transistor switch
The second grid 17 of 14 the first drain electrode 22 and the second thin film transistor switch 15,24 connecting key of second electrode of capacitance electrode 16
Metal layer 9.
According to design requirement, 20 same layer of first grid of bonding metal layer 9 and first film transistor switch 14 is arranged, or
21 same layer of the first source electrode setting of person's bonding metal layer 9 and first film transistor switch 14, also or first film transistor
Bonding metal layer 9 is arranged in the first grid 20 and 21 place film layer of the first source electrode of switch 14 simultaneously.
Fig. 2 show the structural schematic diagram of the alignment mark of bonding metal layer, and the circular dashed line 6 in Fig. 2 represents micro- shine
Diode, the projected area of bonding metal layer 9 are greater than the projected area of micro- light emitting diode 6, micro- light emitting diode 6 be bonded gold
Belong in layer 9 and being connected by metal bonding.
The outside of bonding metal layer 9 is in rectangle, and bonding metal layer 9 is the hollow structure of rectangle, and alignment mark 3 is handed in cross
Forked solid metallic structure, the cross-shaped metal structure of alignment mark 3 are connected to the rectangular centre of bonding metal layer 9
Line realizes that micro- light emitting diode 6 is connect with bonding metal layer 9 by metal bonding by alignment mark 3.
Only list two most basic thin film transistor switch in the embodiment of the present invention, the form of a capacitance electrode,
It can also use more complicated dot structure.
Fig. 3 show the structural schematic diagram of the second embodiment of bonding metal layer, and the outside of bonding metal layer 9 is in rectangle,
The inside of bonding metal layer 9 be equipped with it is rounded hollow out area, alignment mark 3 includes cross-shaped connecting line and rounded solid
The cross-shaped connecting line of metal structure, alignment mark 3 is aligned with the center line of the outer rectangular of bonding metal layer 9, contraposition
The cross-shaped connecting line of label 3 is connected to bonding metal layer 9, and the rounded solid metallic structure of alignment mark 3 is located at ten
The rounded area's concentric circles that hollows out inside word cross-like connecting line and with bonding metal layer 9 is arranged.It is realized by alignment mark 3
Micro- light emitting diode 6 is connect with bonding metal layer 9 by metal bonding.
Fig. 4 show the structural schematic diagram of the 3rd embodiment of bonding metal layer, and the outside of bonding metal layer 9 is in rectangle,
The inside of bonding metal layer 9 is equipped with the rounded area that hollows out, and alignment mark 3 includes cross-shaped connecting line, alignment mark 3
The diagonal alignment of the outer rectangular of cross-shaped connecting line and bonding metal layer 9.Micro- luminous two are realized by alignment mark 3
Pole pipe 6 is connect with bonding metal layer 9 by metal bonding.
Fig. 5 show the structural schematic diagram of the fourth embodiment of bonding metal layer, and the outside of bonding metal layer 9 is in rectangle
Solid metallic structure, alignment mark 3 are located inside bonding metal layer 9, and alignment mark 3 is by diging up cross inside bonding metal layer 9
Cross-like connecting line is formed, and alignment mark 3 is linear in cross-shaped connection, the cross-shaped connecting line of alignment mark 3 and
The center line of the outer rectangular of bonding metal layer 9 is aligned.Micro- light emitting diode 6 and bonding metal layer 9 are realized by alignment mark 3
It is connected by metal bonding.
Fig. 6 show the structural schematic diagram of the 5th embodiment of bonding metal layer, and the outside of bonding metal layer 9 is in rectangle
Solid metallic structure, alignment mark 3 are located inside bonding metal layer 9, and alignment mark 3 is by diging up cross inside bonding metal layer 9
Cross-like connecting line is formed, and alignment mark 3 is linear in cross-shaped connection, the cross-shaped connecting line of alignment mark 3 and
The diagonal alignment of the outer rectangular of bonding metal layer 9.Micro- light emitting diode 6 and bonding metal layer 9 are realized by alignment mark 3
It is connected by metal bonding.
Fig. 7 show the structural schematic diagram of the sixth embodiment of bonding metal layer, and the outside of bonding metal layer 9 is real in rectangle
Heart metal structure, alignment mark 3 are located inside bonding metal layer 9, and alignment mark 3 is handed over by diging up cross inside bonding metal layer 9
Forked connecting line and a round formation, alignment mark 3 include cross-shaped connection threadiness and are located at cross-shaped connection
The circle at linear center, the diagonal line pair of the outer rectangular of the cross-shaped connecting line and bonding metal layer 9 of alignment mark 3
Together.Realize that micro- light emitting diode 6 is connect with bonding metal layer 9 by metal bonding by alignment mark 3.
Bonding metal layer 9 can also be tied according to design requirement according to the bottom of the micro- light emitting diode 6 of micro- light emitting diode 6(
Structure can be for circle, hexagon etc.) structure be designed to different shapes, such as hexagon, circle.The alignment mark 3
Other shapes, such as M shape, Tai Ji shape etc. can also be designed to according to design requirement.
The size of bonding metal layer 9 is more slightly larger than the projected area of micro- light emitting diode 6, and size can be set to 45um-
55um*45um-55um, the bonding metal layer are made of titanium, nickel, copper, gold or its alloy.
The invention also discloses a kind of manufacturing method of array base plate with above-mentioned dot structure, comprising the following steps:
The first step forms the first metal layer on the substrate 13, by exposing and etch, forms the scan line 11 being laterally arranged, the
The of the first grid 20 of one thin film transistor switch 14, the grid 17 of the second thin film transistor switch 15 and capacitance electrode 16
One electrode 23；
Second step forms insulating film layer on the basis of the first step；
Third step on the basis of second step, forms semiconductor layer and second metal layer as shown in Fig. 8 to Fig. 9, by exposure and
Etching forms longitudinally disposed data line 10 and power supply line 12, the scanning formed in data line 10 and power supply line 12 and the first step
Line 11 surrounds the first source electrode 21 and first the 22, second thin film transistor (TFT) of drain electrode of pixel region 8, first film transistor switch 14
Second source electrode 18 of switch 15 and the second drain electrode 19, capacitance electrode 16 second electrode 24 and be located in pixel region 8 and with
The bonding metal layer 9 of 16 second electrode 24 of capacitance electrode connection forms alignment mark 3 in bonding metal layer 9.
Further, thick alignment mark (not shown) can also be formed around 13 viewing area 2 of substrate.
The transfer method step that micro- light emitting diode of the invention is shown the invention also discloses such as Figure 11 to Figure 16 is shown
It is intended to, comprising the following steps:
The first step, as shown in figure 11, transfer backboard 4 are moved to 7 top of carrier substrate, micro- hair in transfer head 5 and carrier substrate 7
Optical diode 6 is aligned；
Second step, as shown in figure 12, transfer backboard 4 are mobile to carrier substrate 7, and transfer head 5 is contacted with micro- light emitting diode 6, turn
It moves head 5 and adsorbs micro- light emitting diode 6；
Third step, as shown in figure 13, transfer head 5 pick up micro- light emitting diode 6；
4th step shifts 4 mobilization head 5 of backboard and micro- light emitting diode 6 is moved to 13 top of substrate as shown in figure 14；
5th step carries out contraposition behaviour by the alignment mark 3 on the bonding metal layer 9 to micro- light emitting diode 6 and array substrate
Make, adjusts the position of micro- light emitting diode 6；
6th step, as shown in figure 15, micro- light emitting diode 6 are bonded with bonding metal layer 9；
7th step, as shown in figure 16, transfer head 5 are separated with micro- light emitting diode 6.
Further, micro- light emitting diode 6 is provided with metal connection in the side tool combined with bonding metal layer 9
Layer, the metal connecting layer are made of titanium, nickel, copper, gold or its alloy.
Further, in the step second step, the suction type that transfer head 5 adsorbs micro- light emitting diode 6 can be quiet
Electro Sorb, vacuum suction, gluing are attached etc..
Further, four step of step the further comprise by viewing area 2 around thick alignment mark carry out it is thick
Positioning.
Further, in five step of step the, alignment operation is optical registration, it is specific the following steps are included:
It takes pictures in same position to dot structure and transfer head 5；Take two photos are sent to processor to count
It calculates, the offset distance and angle of the alignment mark of micro- light emitting diode 6 and bonding metal layer 9 is calculated, according to the offset distance of calculating
Walk-off angle degree, mobile transfer head 5, adjusts the position of micro- light emitting diode 6, corrects offset, recycles above-mentioned steps, until completing
Contraposition.
Further, in six step of step the, micro- light emitting diode 6 and bonding metal layer 9 are by heat treatment or very
The attached mode of suction is bonded.
The preferred embodiment of the present invention has been described above in detail, but during present invention is not limited to the embodiments described above
Detail can carry out a variety of equivalents to technical solution of the present invention (in full within the scope of the technical concept of the present invention
Amount, shape, position etc.), these equivalents all belong to the scope of protection of the present invention.
Claims (10)
1. a kind of dot structure comprising: criss-cross data line and scan line, the power supply line parallel with data line, by sweeping
It retouches line, data line and power supply line and encloses and set the pixel region to be formed and the capacitance electrode in pixel region, it is characterised in that:
It further include and the bonding metal layer that with capacitance electrode connect interior positioned at pixel region and the contraposition being arranged in bonding metal layer
Label.
2. dot structure according to claim 1, it is characterised in that: further include the first film crystalline substance in pixel region
First drain electrode of body pipe switch and the second thin film transistor switch, first film transistor switch is connect with capacitance electrode, and second
Second drain electrode of thin film transistor switch is connect with bonding metal layer.
3. dot structure according to claim 2, it is characterised in that: the first grid of the first film transistor switch
It is connect with scan line, the first source electrode of first film transistor switch is connect with data line；The of second thin film transistor switch
Two grids are connect with capacitance electrode, and the second source electrode of the second thin film transistor switch is connect with power supply line.
4. dot structure according to claim 3, it is characterised in that: the capacitance electrode includes and first film transistor
The first electrode of the first grid same layer setting of switch, second with the first drain electrode same layer setting of first film transistor switch
The insulating layer of electrode and setting between the first electrode and the second electrode.
5. dot structure according to claim 3, it is characterised in that: the bonding metal layer is opened with first film transistor
The first grid same layer of pass is arranged；Or the first source electrode same layer that the bonding metal layer is switched with first film transistor is set
It sets；Or the first grid and the setting of the first source electrode same layer and the bonding metal layer of first film transistor switch and first thin
The first grid of film transistor switch and the setting of the first source electrode same layer.
6. dot structure according to claim 1, it is characterised in that: the bonding metal layer is hollow structure, described right
Position is labeled as solid metallic structure, and the center that the alignment mark is located at bonding metal layer extends to the side of bonding metal layer
Frame is simultaneously connect with bonding metal layer, and the bonding metal layer and alignment mark are same layer metal.
7. dot structure according to claim 1, it is characterised in that: the bonding metal layer is solid construction, described right
Position is labeled as the groove structure for being formed in bonding metal layer center.
8. dot structure according to claim 1, it is characterised in that: the bonding metal layer size is 45um-55um*
45um-55um。
9. a kind of transfer method for carrying out micro- light emitting diode using dot structure described in claim 1, it is characterised in that: packet
Include following steps:
Transfer backboard is moved to above carrier substrate by the first step, and micro- light emitting diode in transfer head and carrier substrate carries out
Contraposition；
Second step, transfer head adsorb micro- light emitting diode；
Third step, transfer head pick up micro- light emitting diode；
4th step, shifts backboard mobilization head and micro- light emitting diode is moved to above substrate；
5th step adjusts the position of micro- light emitting diode by carrying out alignment operation to micro- light emitting diode and alignment mark；
6th step, micro- light emitting diode are bonded with bonding metal layer；
7th step, transfer head are separated with micro- light emitting diode.
10. the transfer method of micro- light emitting diode according to claim 9, it is characterised in that: in five step of step the,
Alignment operation is optical registration, it is specific the following steps are included:
It takes pictures in same position to dot structure and transfer head；Take two photos are sent to processor to count
It calculates, the offset distance and angle of the alignment mark of micro- light emitting diode and bonding metal layer is calculated, according to the offset distance of calculating
And angle, mobile transfer head adjust the position of micro- light emitting diode, correct offset, recycle above-mentioned steps, until completing to align.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910331140.XA CN109830191B (en) | 2019-04-24 | 2019-04-24 | A kind of transfer method of dot structure and micro- light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910331140.XA CN109830191B (en) | 2019-04-24 | 2019-04-24 | A kind of transfer method of dot structure and micro- light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109830191A true CN109830191A (en) | 2019-05-31 |
| CN109830191B CN109830191B (en) | 2019-08-02 |
Family
ID=66875776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910331140.XA Expired - Fee Related CN109830191B (en) | 2019-04-24 | 2019-04-24 | A kind of transfer method of dot structure and micro- light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109830191B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276440A (en) * | 2020-02-16 | 2020-06-12 | 南京中电熊猫平板显示科技有限公司 | Micro device transfer head, manufacturing method thereof and micro device transfer method |
| CN111627952A (en) * | 2020-06-19 | 2020-09-04 | 武汉华星光电技术有限公司 | Display panel, preparation method thereof and display device |
| CN111682040A (en) * | 2020-06-23 | 2020-09-18 | 京东方科技集团股份有限公司 | Detection substrate and ray detector |
| CN111969003A (en) * | 2020-08-31 | 2020-11-20 | 錼创显示科技股份有限公司 | Micro light emitting diode display device and manufacturing method thereof |
| CN111987034A (en) * | 2020-07-28 | 2020-11-24 | 南京中电熊猫液晶显示科技有限公司 | Micro light-emitting diode transfer method |
| CN114750057A (en) * | 2022-06-13 | 2022-07-15 | 富芯微电子有限公司 | Back thinning equipment and process for producing composite fast recovery diode |
| US11837590B2 (en) | 2020-06-19 | 2023-12-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004314436A (en) * | 2003-04-16 | 2004-11-11 | Fujikura Ltd | Method and apparatus for manufacturing laminate |
| CN101490828A (en) * | 2006-07-12 | 2009-07-22 | 索尼株式会社 | Mounting method, mounting structure, method for manufacturing electronic equipment, electronic equipment, method for manufacturing light emitting diode display, and light emitting diode display |
| CN102664187A (en) * | 2012-05-29 | 2012-09-12 | 南京中电熊猫液晶显示科技有限公司 | Organic light emitting diode display and manufacturing method thereof |
| US20150108529A1 (en) * | 2011-03-06 | 2015-04-23 | Mordehai MARGALIT | Light Emitting Diode Package and Method of Manufacture |
| CN104810312A (en) * | 2015-05-21 | 2015-07-29 | 深圳市华星光电技术有限公司 | Manufacture method for alignment mark on grid electrode layer |
| CN106058010A (en) * | 2016-07-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Micro light emitting diode array's transfer printing method |
| CN106847796A (en) * | 2015-11-19 | 2017-06-13 | 三星电子株式会社 | LED chip, light source module, LED display panel and the LED display device including it |
| CN108305849A (en) * | 2018-01-31 | 2018-07-20 | 董秀玲 | A kind of alignment device and contraposition installation method of chip and installation substrate |
| CN109273459A (en) * | 2018-09-27 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of transfer base substrate, production method and transfer method |
| CN109300408A (en) * | 2017-07-25 | 2019-02-01 | 乐金显示有限公司 | Luminous display unit and its manufacturing method |
-
2019
- 2019-04-24 CN CN201910331140.XA patent/CN109830191B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004314436A (en) * | 2003-04-16 | 2004-11-11 | Fujikura Ltd | Method and apparatus for manufacturing laminate |
| CN101490828A (en) * | 2006-07-12 | 2009-07-22 | 索尼株式会社 | Mounting method, mounting structure, method for manufacturing electronic equipment, electronic equipment, method for manufacturing light emitting diode display, and light emitting diode display |
| US20150108529A1 (en) * | 2011-03-06 | 2015-04-23 | Mordehai MARGALIT | Light Emitting Diode Package and Method of Manufacture |
| CN102664187A (en) * | 2012-05-29 | 2012-09-12 | 南京中电熊猫液晶显示科技有限公司 | Organic light emitting diode display and manufacturing method thereof |
| CN104810312A (en) * | 2015-05-21 | 2015-07-29 | 深圳市华星光电技术有限公司 | Manufacture method for alignment mark on grid electrode layer |
| CN106847796A (en) * | 2015-11-19 | 2017-06-13 | 三星电子株式会社 | LED chip, light source module, LED display panel and the LED display device including it |
| CN106058010A (en) * | 2016-07-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Micro light emitting diode array's transfer printing method |
| CN109300408A (en) * | 2017-07-25 | 2019-02-01 | 乐金显示有限公司 | Luminous display unit and its manufacturing method |
| CN108305849A (en) * | 2018-01-31 | 2018-07-20 | 董秀玲 | A kind of alignment device and contraposition installation method of chip and installation substrate |
| CN109273459A (en) * | 2018-09-27 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of transfer base substrate, production method and transfer method |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276440A (en) * | 2020-02-16 | 2020-06-12 | 南京中电熊猫平板显示科技有限公司 | Micro device transfer head, manufacturing method thereof and micro device transfer method |
| CN111627952A (en) * | 2020-06-19 | 2020-09-04 | 武汉华星光电技术有限公司 | Display panel, preparation method thereof and display device |
| WO2021253558A1 (en) * | 2020-06-19 | 2021-12-23 | 武汉华星光电技术有限公司 | Display panel and preparation method therefor, and display apparatus |
| US11837590B2 (en) | 2020-06-19 | 2023-12-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
| CN111682040A (en) * | 2020-06-23 | 2020-09-18 | 京东方科技集团股份有限公司 | Detection substrate and ray detector |
| WO2021258884A1 (en) * | 2020-06-23 | 2021-12-30 | 京东方科技集团股份有限公司 | Detection substrate and ray detector |
| CN111682040B (en) * | 2020-06-23 | 2023-08-08 | 京东方科技集团股份有限公司 | Detection substrate and radiation detector |
| CN111987034A (en) * | 2020-07-28 | 2020-11-24 | 南京中电熊猫液晶显示科技有限公司 | Micro light-emitting diode transfer method |
| CN111969003A (en) * | 2020-08-31 | 2020-11-20 | 錼创显示科技股份有限公司 | Micro light emitting diode display device and manufacturing method thereof |
| CN114750057A (en) * | 2022-06-13 | 2022-07-15 | 富芯微电子有限公司 | Back thinning equipment and process for producing composite fast recovery diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109830191B (en) | 2019-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109830191B (en) | A kind of transfer method of dot structure and micro- light emitting diode | |
| CN102855814B (en) | Display apparatus module and manufacture method thereof and display device | |
| JP6287222B2 (en) | Manufacturing method of concentrating solar power generation unit, manufacturing apparatus used therefor, manufacturing method of concentrating solar power generation module, manufacturing apparatus used therefor | |
| CN107342375B (en) | The production method and flexible display panels of flexible display panels | |
| CN109273565B (en) | Transfer method of micro light-emitting diode chip | |
| JP6978739B2 (en) | Manufacturing method of OLED display device, mask and OLED display device | |
| CN206706184U (en) | Mask plate and mask sheet | |
| WO2020191881A1 (en) | Display panel and preparation method thereof | |
| JP6123717B2 (en) | Solar cell, concentrating solar power generation unit, and concentrating solar power generation module | |
| CN107045988A (en) | The manufacture device of semiconductor device | |
| CN102629567B (en) | Substrate fixing device and manufacturing method thereof and method for fixing substrate | |
| CN109920814A (en) | Display base plate and manufacturing method, display device | |
| CN113286916A (en) | Miniature precise mask plate, manufacturing method thereof and AMOLED display device | |
| CN107371360A (en) | Apparatus for mounting component | |
| CN113571608A (en) | Magnetic-assisted laser patterning Micro-LED bulk transfer method | |
| TW202118004A (en) | Metal-oxide semiconductor module and light-emitting diode element display device in which the metal oxide semiconductor module includes a semiconductor substrate and a plurality of metal oxide semiconductor devices formed on the semiconductor substrate | |
| JP2023541494A (en) | Curved surface display module | |
| US10615136B2 (en) | Micro-device panel and manufacturing process thereof | |
| US20220293635A1 (en) | Semiconductor apparatus and method for manufacturing the same | |
| CN110364607A (en) | Light emitting diode, display base plate, transfer device and its method | |
| JP2009180911A (en) | Substrate lamination method, substrate lamination apparatus, and display device manufactured by using method or apparatus | |
| CN110241381A (en) | The manufacturing method of mask assembly, the manufacturing method of mask assembly and display device | |
| CN109585516A (en) | A kind of TFT driving backboard | |
| CN116848575A (en) | Display manufacturing method using groups of micro LEDs and micro LED arrays | |
| CN114657506A (en) | Mask, mask assembly and method of manufacturing display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Patentee after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Co-patentee before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Patentee before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Co-patentee before: NANJING HUADONG ELECTRONICS INFORMATION & TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190802 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |