CN109817677A - A kind of organic light emitting diode display - Google Patents
A kind of organic light emitting diode display Download PDFInfo
- Publication number
- CN109817677A CN109817677A CN201910094253.2A CN201910094253A CN109817677A CN 109817677 A CN109817677 A CN 109817677A CN 201910094253 A CN201910094253 A CN 201910094253A CN 109817677 A CN109817677 A CN 109817677A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- organic light
- emitting diode
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of organic light emitting diode display, which includes: underlay substrate；Switch arrays layer is set on the underlay substrate；The switch arrays layer includes multiple thin film transistor (TFT)s；Organic light emitting display layer, including anode, organic luminous layer and cathode；Phase compensation film is set on the cathode；Nano-pillar film is set on the phase compensation film, and the nano-pillar film is for it will be seen that light is converted to linearly polarized light.Organic light emitting diode display of the invention can be improved the aperture opening ratio of display.
Description
[technical field]
The present invention relates to field of display technology, more particularly to a kind of organic light emitting diode display.
[background technique]
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display has light-weight, view
The advantages that angle is wide, the response time is fast, low temperature resistant, luminous efficiency is high, liquid crystal display panel can be replaced comprehensively by being considered as next-generation
Display technology, especially OLED can be made into the curved flexible display screen of energy on flexible substrates, this is even more specific to OLED
Huge advantage.
For OLED display screen compared with traditional LCD display, most important feature is the luminous organic material in OLED device
Self-luminous, but when ambient light (natural light) is shining into inside OLED device, natural light can be irradiated to the anode of display interior
And be reflected, contrast is affected, current solution is that polaroid is arranged over the display, the larger (ratio of thickness
Such as 60-100 microns), however since the penetrance of polaroid is smaller, for example be 40%, therefore reduce the aperture opening ratio of display.
Therefore, it is necessary to a kind of organic light emitting diode display be provided, to solve the problems of prior art.
[summary of the invention]
The purpose of the present invention is to provide a kind of organic light emitting diode displays, can be improved the aperture opening ratio of display.
In order to solve the above technical problems, the present invention provides a kind of organic light emitting diode display comprising:
Underlay substrate；
Switch arrays layer is set on the underlay substrate；The switch arrays layer includes multiple thin film transistor (TFT)s；
Organic light emitting display layer, including anode, organic luminous layer and cathode；
Phase compensation film is set on the cathode；
Nano-pillar film is set on the phase compensation film, and the nano-pillar film is for will be seen that it is inclined that light is converted to line
Shake light.
Organic light emitting diode display of the invention, including underlay substrate；Switch arrays layer is set to the underlay substrate
On；The switch arrays layer includes multiple thin film transistor (TFT)s；Organic light emitting display layer, including anode, organic luminous layer and yin
Pole；Phase compensation film is set on the cathode；Nano-pillar film is set on the phase compensation film, and the nano-pillar film is used
In will be seen that light is converted to linearly polarized light；Since the penetrance of nano-pillar film is bigger, to increase opening for display panel
Mouth rate.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the organic light emitting diode display of the embodiment of the present invention one；
Fig. 2 is the enlarged structure schematic diagram of nano-pillar film in organic light emitting diode display of the present invention；
Fig. 3 is the structural schematic diagram of the organic light emitting diode display of the embodiment of the present invention two.
[specific embodiment]
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is to be given the same reference numerals in the figure.
Fig. 1 and 2 is please referred to, Fig. 1 is the structural schematic diagram of the organic light emitting diode display of the embodiment of the present invention one.
As shown in Figure 1, the organic light emitting diode display of the present embodiment include underlay substrate 10, switch arrays layer 20,
Organic light emitting display layer, phase compensation film 41 and nano-pillar film 42.
Switch arrays layer 20 is set on the underlay substrate 10；The old switch arrays include multiple thin film transistor (TFT)s,
Cross section structure includes buffer layer 21, semiconductor layer 22, gate insulation layer 23, grid 24, the first insulating layer 25, metal portion 26, second
Insulating layer 27, second metal layer 28, third insulating layer 29.Second metal layer 28 includes source electrode 281 and drain electrode 282.
The organic light emitting diode display may also include 32 ' of pixel defining layer 32 and spacer, pixel defining layer 32
Including multiple spaced pixel definition units, organic luminous layer 33 is between two neighboring pixel definition unit.
Organic light emitting display layer includes anode 31, organic luminous layer 33 and cathode 34.The material of the anode 31 can be
Metal material.Anode 31 is connect with the drain electrode of thin film transistor (TFT).The organic luminous layer 33 includes red light emitting layer 331, green
Luminescent layer 332 and blue light-emitting layer etc..Cathode 34 is located at 32 ' of spacer and pixel definition unit and organic luminous layer 33
On.
Phase compensation film 41 is set on the cathode 34.Phase compensation film 41 can use one in MLD, CVD and PVD
Kind process deposits obtain, wherein its film thickness is a quarter of visible wavelength.
Nano-pillar film 42 is set on the phase compensation film 41, and the nano-pillar film 42 is for it will be seen that light is (natural
Light) be converted to linearly polarized light.Wherein the thickness of the nano-pillar film is less than 5 μm.In one embodiment, the nano-pillar is thin
The penetrance of film 42 is greater than 80%, to improve the aperture opening ratio of display.In one embodiment, the nano-pillar film is
42 is prepared by molecular film-forming method (Molecular Layer Deposition, MLD).It will of course be understood that not
It is limited to the production method.
Specific manufacturing process is that first applying one layer of induction layer film on the surface of cathode 34 is such as self assembled monolayer
(self-assembled monolayer, SAM), then handles to the induction layer film, polymerize its surface
Reaction obtains the film layer of the great directionality arrangement of one layer of molecular structure, finally obtains the nano-pillar of regular array as shown in Figure 2
Film.
In one embodiment, the material of the self assembled monolayer include the sulfur alcohol compound with amino such as are as follows:
S-(CH2)n-NH2, reactant (4- aminobenzaldehyde) then is added, obtains following chemical structural formula:
Reactant is continuously added, following chemical structural formula is obtained:
With being continuously added for reactant, nano-pillar film shown in Fig. 2 is obtained.MLD reactant can choose containing rigidity
The aromatic compound of structure, while can be by changing the deposition number of plies of MLD and the carbon chain lengths change nanometer of aromatic compound
The thickness of column film, to achieve the purpose that quickly to form linear nano-pillar.
Since the molecules align of the nano-pillar film has extremely strong directionality, in conjunction with phase compensation film, obtain complete
The optical thin film with rotatory polarization piece, so as to resist interference of the visible light in external environment to OLED device.
When the visible light in external environment enters inside OLED device, since nano-pillar film 42 itself has polaroid
Effect, natural light can be changed into linearly polarized light, greatly reduced into the visible light inside OLED device, and part into
The linearly polarized light for entering device inside enters display interior by phase compensation film 41, is reflected, again passes by by anode 31
Phase compensation film 41, linearly polarized light differs 180 ° with the linearly polarized light phase difference entered inside OLED at this time, cancels out each other, thus
It realizes the visible light effectively reduced into display, prevents ambient light from entering inside OLED device from light emitting region, improve
The contrast of display effect and device.
Since the penetrance of nano-pillar film is usually larger, to increase the aperture opening ratio of display panel.And due to nanometer
The thickness of column film is usually smaller, less than the thickness of polaroid, therefore can also reduce the thickness of display.
Referring to figure 3., Fig. 3 is the structural schematic diagram of the organic light emitting diode display of the embodiment of the present invention two.
As shown in figure 3, the present embodiment and the difference of a upper embodiment are, the organic light-emitting diode display of the present embodiment
Device further includes light-absorption layer 43.
Under depression angle, the organic light emitting diode display include light emitting region 101 and non-luminous region (101 with
Outer region)；Wherein the light emitting region 101 is corresponding with the position of the organic luminous layer 33.
In one embodiment, light-absorption layer 43 is set between the phase compensation film 41 and the nano-pillar film 42, and
The light-absorption layer 43 is corresponding with the position of the non-luminous region.Wherein the thickness of the light-absorption layer 43 is smaller than the nano-pillar
The thickness of film 42.
In another embodiment, light-absorption layer 43 can also be set on the nano-pillar film 42.The wherein light-absorption layer 43
Thickness may be less than or equal to the thickness of the nano-pillar film 42.
In one embodiment, the organic light emitting diode display further include:
First encapsulating film 44 is set between the organic light emitting display layer and phase compensation film 41.First encapsulating film 44 is specific
Between the cathode 34 and phase compensation film 41.
First encapsulating film 44 includes: the first inorganic layer and the first organic layer, and the first inorganic layer is set to organic hair
On light display layer；It is specifically set on cathode, the first organic layer is set on first inorganic layer.The material of first inorganic layer
It may include SiN, SiON, Al2O3、TiO2, at least one of SiCN.First organic layer is for playing buffering and making to show
The flat effect in the surface of device.
The organic light emitting diode display further include: the second encapsulating film 45 is set on the nano-pillar film 42.The
Two encapsulating films 45, including the second organic layer and the second inorganic layer, the second organic layer are set to described state on nano-pillar film 42；Second
Inorganic layer is set on second organic layer.The material of second inorganic layer includes SiN, SiON, Al2O3、TiO2, in SiCN
At least one.
On the basis of example 1, due to being arranged light-absorption layer in non-luminous region, extraneous visible light will not be from
Non-luminous region enters inside OLED device, namely reduces the light being incident on anode, to greatly reduce visible light to aobvious
The influence for showing device, further improves display effect, improves device contrast.
Organic light emitting diode display of the invention, including underlay substrate；Switch arrays layer is set to the underlay substrate
On；The switch arrays layer includes multiple thin film transistor (TFT)s；Organic light emitting display layer, including anode, organic luminous layer and yin
Pole；Phase compensation film is set on the cathode；Nano-pillar film is set on the phase compensation film, and the nano-pillar film is used
In will be seen that light is converted to linearly polarized light；Since the penetrance of nano-pillar film is larger, to increase the opening of display panel
Rate.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of organic light emitting diode display characterized by comprising
Underlay substrate；
Switch arrays layer is set on the underlay substrate；The switch arrays layer includes multiple thin film transistor (TFT)s；
Organic light emitting display layer, including anode, organic luminous layer and cathode；
Phase compensation film is set on the cathode；
Nano-pillar film is set on the phase compensation film, and the nano-pillar film is for it will be seen that light is converted to linearly polarized light.
2. organic light emitting diode display according to claim 1, which is characterized in that described organic under depression angle
Light emitting diode indicator includes light emitting region and non-luminous region；
The organic light emitting diode display further include:
Light-absorption layer is set on the phase compensation film, and corresponding with the position of the non-luminous region.
3. organic light emitting diode display according to claim 2, which is characterized in that the light-absorption layer is set to described
Between phase compensation film and the nano-pillar film.
4. organic light emitting diode display according to claim 2, which is characterized in that the thickness of the light-absorption layer is less than
Or the thickness equal to the nano-pillar film.
5. organic light emitting diode display according to claim 1, which is characterized in that
The thickness of the nano-pillar film is less than 5 μm.
6. organic light emitting diode display according to claim 1, which is characterized in that
The penetrance of the nano-pillar film is greater than 80%.
7. organic light emitting diode display according to claim 1, which is characterized in that
The a quarter of the wavelength with a thickness of visible light of the phase compensation film.
8. organic light emitting diode display according to claim 1, which is characterized in that the Organic Light Emitting Diode is aobvious
Show device further include:
First encapsulating film is set between the organic light emitting display layer and phase compensation film.
9. organic light emitting diode display according to claim 8, which is characterized in that first encapsulating film includes:
First inorganic layer is set on the organic light emitting display layer；
First organic layer is set on first inorganic layer.
10. organic light emitting diode display according to claim 1, which is characterized in that the Organic Light Emitting Diode
Display further include:
Second encapsulating film is set on the nano-pillar film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910094253.2A CN109817677A (en) | 2019-01-30 | 2019-01-30 | A kind of organic light emitting diode display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910094253.2A CN109817677A (en) | 2019-01-30 | 2019-01-30 | A kind of organic light emitting diode display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109817677A true CN109817677A (en) | 2019-05-28 |
Family
ID=66605961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910094253.2A Pending CN109817677A (en) | 2019-01-30 | 2019-01-30 | A kind of organic light emitting diode display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109817677A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900268A (en) * | 2020-08-12 | 2020-11-06 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1921141A (en) * | 2006-09-11 | 2007-02-28 | 友达光电股份有限公司 | Pixel unit structure for autoluminescence unit display with low reflectance |
| JP2007256854A (en) * | 2006-03-24 | 2007-10-04 | Toshiba Corp | Method for manufacturing nano pattern and nano pattern substrate, semiconductor memory cell |
| CN103682157A (en) * | 2013-12-10 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, organic electroluminescent display device manufacturing method and display equipment |
| CN104393183A (en) * | 2014-11-17 | 2015-03-04 | 昆山国显光电有限公司 | Organic electroluminescence device and preparation method thereof |
| CN105070741A (en) * | 2015-09-02 | 2015-11-18 | 京东方科技集团股份有限公司 | Array substrate, OLED display panel and display device |
| CN105810718A (en) * | 2016-05-06 | 2016-07-27 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) display panel and fabrication method thereof |
| CN108052238A (en) * | 2017-12-14 | 2018-05-18 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof, display device |
| CN108089367A (en) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | A kind of array substrate, liquid crystal display panel and display device |
| CN108922903A (en) * | 2018-07-13 | 2018-11-30 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel and display device |
-
2019
- 2019-01-30 CN CN201910094253.2A patent/CN109817677A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007256854A (en) * | 2006-03-24 | 2007-10-04 | Toshiba Corp | Method for manufacturing nano pattern and nano pattern substrate, semiconductor memory cell |
| CN1921141A (en) * | 2006-09-11 | 2007-02-28 | 友达光电股份有限公司 | Pixel unit structure for autoluminescence unit display with low reflectance |
| CN103682157A (en) * | 2013-12-10 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, organic electroluminescent display device manufacturing method and display equipment |
| CN104393183A (en) * | 2014-11-17 | 2015-03-04 | 昆山国显光电有限公司 | Organic electroluminescence device and preparation method thereof |
| CN105070741A (en) * | 2015-09-02 | 2015-11-18 | 京东方科技集团股份有限公司 | Array substrate, OLED display panel and display device |
| CN105810718A (en) * | 2016-05-06 | 2016-07-27 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) display panel and fabrication method thereof |
| CN108052238A (en) * | 2017-12-14 | 2018-05-18 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof, display device |
| CN108089367A (en) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | A kind of array substrate, liquid crystal display panel and display device |
| CN108922903A (en) * | 2018-07-13 | 2018-11-30 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900268A (en) * | 2020-08-12 | 2020-11-06 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111900268B (en) * | 2020-08-12 | 2023-09-05 | 京东方科技集团股份有限公司 | Display panel and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10147880B2 (en) | Mask for thin film deposition and method of manufacturing oled using the same | |
| US20190088726A1 (en) | Organic light-emitting diode (oled) display panel and manufacturing method thereof, and display device | |
| US20180204952A1 (en) | Oxide thin film transistor and method of fabricating the same | |
| US8223096B2 (en) | Organic light emitting diode display and method for manufacturing the same | |
| US7816677B2 (en) | Organic light emitting device | |
| CN102569673B (en) | The method of solder mask frame assembly, its manufacture method and manufacture organic light emitting display | |
| US20150102291A1 (en) | Organic electroluminescent device and method of manufacturing the same | |
| US8593058B2 (en) | Organic light-emitting display device | |
| US10305049B2 (en) | OLED substrate and manufacture method thereof | |
| CN104576700A (en) | COA-type WOLED (color filter on array type white organic light emitting diode) structure and manufacturing method | |
| US9806295B2 (en) | Display panel and organic light emitting display device | |
| KR20100138139A (en) | Organic light emitting display apparatus and apparatus for thin layer deposition for manufacturing the same | |
| US10038159B2 (en) | Organic electroluminescent device structure and manufacturing for the same | |
| CN103915580B (en) | A kind of WOLED backboard and preparation method thereof | |
| US20160254287A1 (en) | Thin-Film Transistor, Manufacturing Method Thereof, Display Substrate and Display Device | |
| CN109638020A (en) | Display panel and preparation method thereof, display module | |
| Noda et al. | 74.1 L: Late‐News Paper: Oxide TFTs and Color Filter Array Technology for Flexible Top‐emission White OLED Display | |
| WO2018086210A1 (en) | Tft substrate and manufacturing method therefor | |
| WO2021103177A1 (en) | Organic light emitting diode display substrate and manufacturing method therefor, and display device | |
| CN103681765B (en) | Display floater and preparation method thereof, display unit | |
| US9312276B2 (en) | Method for manufacturing array substrate | |
| KR101520489B1 (en) | Organic light emitting diodde desplay device and fabricating method therof | |
| CN109817677A (en) | A kind of organic light emitting diode display | |
| WO2014047964A1 (en) | Active matrix organic light emitting diode and preparation method thereof | |
| US11067845B2 (en) | Liquid crystal panel and method of manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190528 |
|
| RJ01 | Rejection of invention patent application after publication |