CN109811402A - A kind of crystal pulling system and crystal pulling method - Google Patents
A kind of crystal pulling system and crystal pulling method Download PDFInfo
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- CN109811402A CN109811402A CN201711174291.6A CN201711174291A CN109811402A CN 109811402 A CN109811402 A CN 109811402A CN 201711174291 A CN201711174291 A CN 201711174291A CN 109811402 A CN109811402 A CN 109811402A
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Abstract
The present invention provides a kind of crystal pulling system and crystal pulling methods.The system comprises: crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With horizontal magnetic field bringing device, the horizontal magnetic field bringing device includes the multiple loop coils for applying horizontal magnetic field to the silicon melt being arranged on the outside of the crystal pulling chamber, the load power of the multiple loop coil independently controls, it wherein, include the movable coil that can be moved up and down in the vertical direction of the horizontal magnetic field in the multiple loop coil.Crystal pulling system and crystal pulling method according to the present invention, the distribution of the horizontal magnetic intensity being applied in crucible on silicon melt in vertical direction is adjusted during crystal pulling, rather than bushing position is adjusted, realization is adjusted and optimizes to the horizontal magnetic intensity of silicon melt level in crucible, so as to avoid the crucible drive system when carrying out the crystal pulling of large scale crystal column using larger volume or power.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of crystal pulling system and crystal pulling method.
Background technique
Czochralski method (hereinafter referred to as " CZ method ") is method for preparing single crystal most widely used in the manufacture of Silicon Wafer.
CZ method is to make the method for crystal growth while lifting in the molten silicon that crystal seed is impregnated in silica crucible.Pass through CZ method
The crystal column of formation, further progress cut to form Silicon Wafer.
In order to improve semiconductor devices yield and reduce IC chip manufacturing cost, silicon single crystal wafer it is straight
Diameter was originally bigger, this makes occur more and more problems during monocrystalline silicon growing, as monocrystalline oxygen concentration increase, crystal at
The problems such as long stability is low and low yield.A kind of solution is using the CZ method for applying horizontal magnetic field, specifically, using containing
Have a horizontal magnetic field for applying some strength outside the crucible of melting monocrystalline silicon body (i.e. silicon melt), at the same by crucible carry out rotation and
It moves up and down on the direction of crystal growth, is drawn with guaranteeing silicon melt level in crucible to be maintained under constant magnetic field strength
It is brilliant.However, in the crystal growing process of larger size, as 450mm monocrystalline silicon growth course in need more high-power or body
Long-pending crucible drive unit is difficult to overcome this disadvantage in the prior art with mobile crucible.
Therefore, it is necessary to be improved to current crystal pulling system and crystal pulling method, so as to eliminate presently, there are the problem of.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of crystal pulling system, the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
Horizontal magnetic field bringing device, the horizontal magnetic field bringing device include be arranged on the outside of the crystal pulling chamber to
The silicon melt applies multiple loop coils of horizontal magnetic field, and the load power of the multiple loop coil independently controls,
It wherein, include the movable coil that can be moved up and down in the vertical direction of the horizontal magnetic field in the multiple loop coil.
Illustratively, the horizontal magnetic field that the movable coil applies includes from the silicon melt level to the crucible bottom
Region between portion.
Illustratively, the horizontal magnetic field bringing device includes loop coil described at least ten, including:
The horizontal magnetic field of application is distributed in the loop coil in the region of the silicon melt level or more；
The horizontal magnetic field of application is distributed in the silicon melt level to the loop coil in the region of the crucible bottom；
The horizontal magnetic field of application is distributed in the loop coil in crucible bottom region below.
It illustratively, include movable coil described at least three in the multiple loop coil.
Illustratively, the system also includes the silicon melt level monitoring systems that the crystal pulling chamber roof is arranged in.
Illustratively, the silicon melt level monitoring system includes optical sensor.
Illustratively, the system also includes horizontal magnetic field automatic control modules, fill to apply to the horizontal magnetic field
It sets and carries out automatically controlling.
Illustratively, the horizontal magnetic field automatic control module carries out certainly horizontal magnetic field by machine learning Controlling model
Dynamic control.
Illustratively, the horizontal magnetic field automatic control system includes:
Data acquisition module, to obtain the process data in crystal pulling technique, the process data includes device parameter number
According to, properties of product data corresponding with the device parameter data；
Data conversion module, the process data is converted into computable standardized data；
Machine learning control module obtains the control of horizontal magnetic field bringing device calculate according to the process data
Prediction result, and the horizontal magnetic field bringing device is carried out automatically according to the horizontal magnetic field bringing device control forecasting result
Control.
Illustratively, the horizontal magnetic field automatic control module controls the size of the load power of the loop coil, adds
Carry the order of power and/or the position of the movable coil.
The present invention also provides a kind of crystal pulling methods carried out using above-mentioned crystal pulling system, which is characterized in that in crystal pulling
The loop coil is adjusted in journey to adjust the distribution of the horizontal magnetic field in vertical direction.
Illustratively, described the step of adjusting the loop coil includes adjusting to load the big of power in the loop coil
Small, load power order and/or the movable coil position.
Illustratively, keep the horizontal position for storing the crucible of the silicon melt constant during crystal pulling.
Illustratively, the step of adjustment loop coil is implemented by machine learning Controlling model.
Illustratively, the process of the machine learning Controlling model implementation includes:
The process data in crystal pulling technique is obtained, the process data includes device parameter data and the device parameter
The corresponding properties of product data of data；
The process data is converted into computable standardized data；
Horizontal magnetic field bringing device control forecasting is calculated according to the standardized data using neural network prediction model
As a result；
The horizontal magnetic field bringing device is controlled according to the horizontal magnetic field bringing device control forecasting result.
Crystal pulling system and crystal pulling method according to the present invention, by the way that horizontal magnetic field device is arranged around the crystal pulling chamber
The loop coil of multiple independent controls of outside setting, adjusts the level being applied in crucible on silicon melt during crystal pulling
The distribution of magnetic field strength in vertical direction, rather than bushing position is adjusted, silicon melt in crucible during realization crystal pulling
The horizontal magnetic intensity of liquid level is constant, avoids and drives upside down to crucible, so as to avoid the drawing of large scale crystal column is being carried out
Using the crucible drive system of larger volume or power when brilliant, to reduce crystal pulling system bulk.Meanwhile drawing according to the present invention
Crystallographic system system and crystal pulling method have the parameter optimization mode of a variety of horizontal magnetic field bringing devices, so as to excellent during crystal pulling
Change the distribution of horizontal magnetic field in vertical direction, is allowed to be adapted to the growth of silicon crystal column.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows a kind of structural schematic diagram of crystal pulling system；
The structural schematic diagram for the crystal pulling system implemented Fig. 2 shows one according to the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
Technical solution.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can be with
With other embodiments.
In order to improve semiconductor devices yield and reduce IC chip manufacturing cost, silicon single crystal wafer it is straight
Diameter was originally bigger, this makes occur more and more problems during monocrystalline silicon growing, as monocrystalline silicon oxygen concentration increases, crystal
Grow up the problems such as stability is low and low yield.A kind of solution be using the CZ method for applying horizontal magnetic field, specifically, using
The horizontal magnetic field for applying some strength outside the crucible of melting monocrystalline silicon body is filled, while crucible rotate and in crystal growth
Direction on move up and down, to guarantee in crucible that silicon melt level keeps scheduled magnetic field strength.A kind of crystal pulling as shown in figure 1
The structural schematic diagram of system, wherein crystal pulling system includes crystal pulling chamber 1, be provided in crystal pulling chamber 1 crucible 2 and to crucible 2 into
The heater 3 of row heating, be provided with below crucible 2 crucible drive unit 4 to drive the rotation of crucible 2 and in vertical direction on
Lower movement, wherein crystal pulling system further includes the horizontal magnetic field bringing device 5 being arranged on the outside of crystal pulling chamber, to positioned at earthenware
The silicon melt of crucible 2 applies horizontal magnetic field.However, in vertical direction strong of existing magnetic field applicator during crystal pulling
Degree distribution remains unchanged, such as gradually increases or reduce from silicon melt level to bottom in vertical direction but in same level
Intensity in height remains unchanged, and at the same time, controls the rotation of crucible 2 by crucible drive unit 4 and moves up and down, to protect
The position of the liquid level of card silicon melt in vertical direction is constant, so that the position at silicon melt level has constant default magnetic
Field intensity.In the crystal growing process of larger size, as 450mm monocrystalline silicon growth course in need larger size or function
The problems such as crucible drive unit of rate brings the size of crystal pulling apparatus to increase thus to drive crucible to move up and down, and load increases.
In order to solve the problems in the prior art, the present invention provides a kind of crystal pulling system, the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
Horizontal magnetic field bringing device, the horizontal magnetic field bringing device include be arranged on the outside of the crystal pulling chamber to
The silicon melt applies multiple loop coils of horizontal magnetic field, and the load power of the multiple loop coil independently controls,
It wherein, include the movable coil that can be moved up and down in the vertical direction of the horizontal magnetic field in the multiple loop coil.
Crystal pulling system and crystal pulling method according to the present invention, by the way that horizontal magnetic field device is arranged around the crystal pulling chamber
The loop coil of multiple independent controls of outside setting, adjusts the level being applied in crucible on silicon melt during crystal pulling
The distribution of magnetic field strength in vertical direction, rather than bushing position is adjusted, silicon melt in crucible during realization crystal pulling
The horizontal magnetic intensity of liquid level is constant, avoids and drives upside down to crucible, so as to avoid the drawing of large scale crystal column is being carried out
Using the crucible drive system of larger volume or power when brilliant, to reduce crystal pulling system bulk.Meanwhile drawing according to the present invention
Crystallographic system system and crystal pulling method have the parameter optimization mode of a variety of horizontal magnetic field bringing devices, so as to excellent during crystal pulling
Change the distribution of horizontal magnetic field in vertical direction, is allowed to be adapted to the growth of silicon crystal column.
Embodiment one
In order to solve the problems in the prior art, a kind of crystal pulling system is present embodiments provided, it is suitable for larger diameters
Silicon Wafer crystal pulling technique is particularly suitable for 450mm diameter Silicon Wafer crystal pulling technique.As shown in Fig. 2, showing according to the present invention
A kind of structural schematic diagram of the crystal pulling system of one embodiment.The crystal pulling system includes crystal pulling chamber 21, is set in crystal pulling chamber
The heater 23 for being equipped with the crucible 22 of storage silicon melt and crucible 22 being heated, the horizontal magnetic in 21 outside of crystal pulling chamber
Field bringing device 25 is stored with silicon melt 26 in crucible 22 to apply horizontal magnetic field to the silicon melt for being located at crucible 22.It is described
Horizontal magnetic field bringing device 25 includes applying the multiple of horizontal magnetic field to silicon melt 26 around what the crystal pulling chamber outside was arranged
The power of loop coil, the multiple loop coil independently controls, so that the horizontal magnetic field bringing device is applied to institute
The distribution of horizontal magnetic intensity in vertical direction stated on silicon melt is adjustable.By the way that multiple loop coils are arranged, wherein each
Loop coil is controlled by independent current source and generates horizontal magnetic field, so that being applied to horizontal magnetic field on silicon melt during crystal pulling
Magnetic field strength it is adjustable in vertical direction, i.e., do not need to be adjusted bushing position during crystal pulling and maintain silicon melt liquid
The magnetic field strength that silicon melt level in crucible is realized in the case that face is constant is kept constant, and is carried out so as to avoid to crucible
Lower driving reduces the crucible drive system using larger volume or power, to reduce when carrying out the crystal pulling of large scale crystal column
Crystal pulling system bulk.Meanwhile in the multiple loop coil include it is multiple can in the vertical direction of horizontal magnetic field on move down
Dynamic movable coil, so as to load power by coil and the mobile change line of coil can also be passed through except the load time
The distribution of the position optimization horizontal magnetic field of circle in vertical direction is allowed to further adapt to the growth of silicon crystal column.
With continued reference to Fig. 2, crucible drive unit 24 is provided with below crucible 22 to drive crucible 22 to rotate.In crystal pulling
Keeping crucible rotation in the process is the hot asymmetry in order to reduce silicon melt, makes silicon crystal column isodiametric growth.The crystal pulling system
System also packet seed crystal, bracing wire, bracing wire motor 28, argon gas plate and the insulation material layer that is arranged on the outside of heater etc. is in the prior art
Configuration, do not shown all in Fig. 2, those skilled in the art, which can according to need, to be selected, and details are not described herein.
Illustratively, the horizontal magnetic field that the movable coil applies includes from the silicon melt level to the crucible bottom
Region between portion.Illustratively, the horizontal magnetic field bringing device includes at least 10 loop coils, including: it applies
The horizontal magnetic field added is distributed in the loop coil in the region of the silicon melt level or more；The horizontal magnetic field of application is distributed in
The loop coil of the silicon melt level to the region of the crucible bottom；The horizontal magnetic field of application is distributed in the crucible
The loop coil in bottom region below.It, can during crystal pulling to form the horizontal magnetic field for including entire silicon melt
To form wide in range magnetic field adjustable extent, the magnetic field center adjustable area of formation is located at silicon melt level between crucible bottom.
It illustratively, include movable coil described at least three in the multiple loop coil.As shown in Fig. 2, horizontal magnetic
Field bringing device includes multiple loop coils, wherein the horizontal magnetic field including application is distributed in 26 liquid level 26a of silicon melt or more
The loop coil 251 and 252 in region, the liquid level 26a or less that the horizontal magnetic field of application is distributed in silicon melt 26 arrive the bottom of crucible 22
The loop coil 253,254 and 255 in the region of portion 22b or more, and the horizontal magnetic field applied are distributed in the bottom 22b of crucible 22
The loop coil 256 and 257 in region below.Wherein, the horizontal magnetic field of application is from the silicon melt level to silicon melt bottom
Loop coil be set as movable coil, i.e. loop coil 253,254 and 255 is set as movable coil, thus in crystal pulling
It on the one hand can be applied in the process by the electric current and switching sequence control for controlling loop coil 253,254 and 255 from described
Silicon melt level to the region of crucible bottom horizontal magnetic field intensity, maintain the perseverance of the horizontal magnetic intensity of silicon melt level
It is fixed, it on the other hand can also be by mobile loop coil 253,254 and 255, to change from silicon melt level 26a to crucible bottom
The horizontal magnetic intensity of 22b is distributed, meanwhile, with the variation of the position of silicon melt level 26a during crystal pulling, optimize from silicon
The horizontal magnetic intensity of melt liquid level 26a to crucible bottom 22b is distributed, and further promotes the quality of crystal pulling technique.
It is to be appreciated that the present embodiment includes from the silicon melt level to the crucible bottom with the horizontal magnetic field applied
The loop coil in region is set as movable coil and is only exemplary between portion, according to actual needs, those skilled in the art
Member it is also an option that by the horizontal magnetic field region of application be located at silicon melt level or more region and positioned at crucible bottom it is below
The loop coil in region is set as movable coil, even movable coil is arranged on the outside of fixed loop coil etc.
Situation, with the distribution of the horizontal magnetic field during fully optimized crystal pulling.Also, it is understood that the present embodiment is to apply
The loop coil that horizontal magnetic field is distributed in the silicon melt level to the region of the crucible bottom is set as movable coil, and
The loop coil that the silicon melt level have to be distributed in the region of the crucible bottom to the horizontal magnetic field of application limits
It is fixed, setting unit in loop coil of the silicon melt level to the region of the crucible bottom is distributed in the horizontal magnetic field of application
Divide movable coil or be all set to movable coil and is suitable for the present invention.
Illustratively, the horizontal magnetic field that the horizontal magnetic field bringing device includes at least 2 applications is distributed in silicon melt liquid
The loop coil of face area above further accurately controls the level of silicon melt level or more by least two loop coil
The distribution of magnetic field strength in vertical direction.Illustratively, the horizontal magnetic field bringing device includes at least the level of 2 applications
Distribution of Magnetic Field further accurately controls crucible by least two loop coil in the loop coil of crucible bottom following region
The distribution of bottom horizontal magnetic intensity below in vertical direction.
It is to be appreciated that the horizontal magnetic field of the application is distributed in the region of silicon melt level or more, silicon melt level
Setting to crucible bottom region and crucible bottom following region is only exemplary, and any number of loop coil can be real
The magnetic field strength for the horizontal magnetic field being now applied on silicon melt, which is distributed adjustable embodiment in vertical direction, may be applicable to this
Invention.It, can also be with it is also to be appreciated that multiple loop coils can have the coil parameters such as identical loop density, diameter
Has different coil parameters, those skilled in the art, which can according to need, to be configured.
Illustratively, the system also includes the silicon melt surface monitoring devices for being located at the crystal pulling chamber roof.It is described
Monitoring device is to monitor silicon melt level state.Illustratively, the monitoring device is set as optical sensor, to monitor
Liquid level position of silicon melt is adjusted magnetic field applicator according to the liquid level position of silicon melt.As shown in Fig. 2, in crystal pulling chamber
Optical sensor 27 is arranged in the top of room 21.
Illustratively, the system also includes horizontal magnetic field automatic control systems, fill to apply to the horizontal magnetic field
It sets and carries out automatically controlling.The horizontal magnetic field automatic control system includes: data acquisition module, to obtain work in crystal pulling technique
Skill data, the process data include device parameter data, properties of product data corresponding with each device parameter data；Data turn
Block is changed the mold, the process data is converted into computable standardized data；Machine learning control module, to according to institute
It states process data and calculate acquisition horizontal magnetic field bringing device control forecasting as a result, and according to the horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling the horizontal magnetic field bringing device.The horizontal magnetic field automatic control system uses
The process data obtained during crystal pulling technique generates prediction data by machine learning Controlling model, passes through prediction data control
The coil load quantity of the horizontal magnetic field bringing device is made, load power etc. is controlled.
Show that routinely the process controlled by learning control model horizontal magnetic field bringing device includes: to obtain
Process data in crystal pulling technique is taken, the process data includes device parameter data, product corresponding with each device parameter data
Performance data；The process data is converted into computable standardized data；Using neural network prediction model according to
Standardized data calculates horizontal magnetic field bringing device control forecasting result；According to horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and can be with using the method for neural computing horizontal magnetic field bringing device control forecasting result
Using the method that those skilled in the art are general, details are not described herein.Finally, according to calculated horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling horizontal magnetic field bringing device.Illustratively, horizontal magnetic field bringing device control forecasting
As a result the prediction result of the device parameter including horizontal magnetic field bringing device.Pass through horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator includes the size for controlling the load power of loop coil, loads the order of power and/or removable
The position etc. of moving winding.
It is to be appreciated that the example in the present embodiment in the method for neural network as machine learning model is to horizontal magnetic
The control mode of field automatic control system, which is illustrated, to be only exemplary, and the model of other machines study is such as based on vector
Statistical learning, deep learning of machine etc. are suitable for the present invention.
Embodiment two
Crystal pulling method is carried out using crystal pulling system described in embodiment one the present invention also provides a kind of, wherein in crystal pulling
The loop coil is adjusted in journey to adjust the distribution of the horizontal magnetic field in vertical direction.In crystal pulling during crystal pulling
The loop coil is adjusted in journey to adjust point of the horizontal magnetic intensity being applied in crucible on silicon melt in vertical direction
Cloth, rather than bushing position is adjusted, the horizontal magnetic intensity of silicon melt level remains permanent in crucible during realization crystal pulling
It is fixed, it drives upside down so as to avoid to crucible, when carrying out the crystal pulling of large scale crystal column, reduces using larger volume or function
The crucible drive system of rate, to reduce crystal pulling system bulk.
Illustratively, the process of the crystal pulling includes: that polycrystalline silicon raw material doping and melting process, horizontal magnetic field loaded
Journey；Silicon melt heating and stabilization process；Seed crystal and melt contacts process；Room, lifting, equal diameter control and epilog, institute
The process of stating can be process identical with crystal pulling process in the prior art or similar deformation, and details are not described herein.Below only
Only lifting process is illustratively described.
Illustratively, it keeps the horizontal position of the crucible of storage silicon melt constant during crystal pulling, crystal pulling can be kept
The stability of silicon melt in the process.Referring to Fig. 2, in crystal pulling chamber 21, crucible 22 will be placed in by the polysilicon block as raw material
It is interior, crucible is heated with scheduled temperature setting heater 23, so that polysilicon block melts to form silicon as shown in Figure 2
Melt 26.Driving crystal seed is immersed in silicon melt 26, and bracing wire motor 28 is driven to lift crystal seed with certain speed, and crystal seed is in bracing wire
Lifting under lift out monocrystalline column 20 upwards, in the process, the liquid level of silicon melt 26 is with the carry out liquid level during lifting
Height declines, while adjusting the loop coil in horizontal magnetic field bringing device 25, so that in liquid level position during liquid level declines
The magnetic field strength set is kept constant, and in the process, keep bushing position constant.Monocrystalline silicon is formed by this step lifting process
Crystal ingot.
Illustratively, described the step of adjusting the loop coil includes adjusting to load the big of power in the loop coil
Small, load power order and/or the movable coil position.As shown in Fig. 2, toroid is applied in adjustment during crystal pulling
The adjustable horizontal magnetic field of order of the size of the load power of each loop coil and load power exists in circle 251 to 257
Distribution in vertical direction.Meanwhile the distribution for optimum level magnetic field in vertical direction, it can also further adjust annular
The position of coil 253,254 and 255, illustratively, with the progress of crystal pulling process, silicon melt level is gradually decreased, will be annular
Coil 253,254 and 255 moves up or down in vertical direction, to optimize silicon as silicon melt level gradually decreases
To the distribution of the horizontal magnetic field of crucible bottom area above below melt liquid level, crystal pulling quality is further promoted.
Illustratively, during crystal pulling to the horizontal magnetic intensity being applied on the silicon melt in vertical direction
Distribution carries out automatically controlling.Illustratively, by machine learning Controlling model to the horizontal magnetic field being applied on the silicon melt
The distribution of intensity in vertical direction carries out automatically controlling.Show routinely, it is described that horizontal magnetic field is applied by learning control model
The process that feeder apparatus is controlled include: obtain crystal pulling technique in process data, the process data include device parameter data,
Properties of product data corresponding with each device parameter data；The process data is converted into computable standardized data；It adopts
Horizontal magnetic field bringing device control forecasting result is calculated according to the standardized data with neural network prediction model；According to water
Flat magnetic field applicator control forecasting result controlled level magnetic field applicator.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and can be with using the method for neural computing horizontal magnetic field bringing device control forecasting result
Using the method that those skilled in the art are general, details are not described herein.Finally, according to calculated horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling horizontal magnetic field bringing device.Illustratively, horizontal magnetic field bringing device control forecasting
As a result the prediction result of the device parameter including horizontal magnetic field bringing device.Pass through horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator includes the size for controlling the load power of loop coil, loads the order of power and/or removable
The position etc. of moving winding.The horizontal magnetic field automatic control system uses the process data obtained during crystal pulling technique, leads to
Overfitting Controlling model generates prediction data, loads number by the coil that prediction data controls the horizontal magnetic field bringing device
Amount, loading current etc. are controlled.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and the method for utilizing neural computing horizontal magnetic field bringing device control forecasting result are this
Method known to the technical staff of field, details are not described herein.
In conclusion crystal pulling system according to the present invention and crystal pulling method, by the way that horizontal magnetic field device is arranged around
The loop coil for the multiple independent controls being arranged on the outside of the crystal pulling chamber, it is molten to be applied to silicon in crucible for adjustment during crystal pulling
The distribution of horizontal magnetic intensity in vertical direction on body, rather than bushing position is adjusted, realize earthenware during crystal pulling
The horizontal magnetic intensity of silicon melt level is constant in crucible, avoids and drives upside down to crucible, so as to avoid carrying out greatly
Using the crucible drive system of larger volume or power when size crystal column crystal pulling, to reduce crystal pulling system bulk.Meanwhile according to
Crystal pulling system and crystal pulling method of the invention has the parameter optimization mode of a variety of horizontal magnetic field bringing devices, so as to draw
The distribution of optimum level magnetic field in vertical direction during crystalline substance is allowed to be adapted to the growth of silicon crystal column.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (15)
1. a kind of crystal pulling system, which is characterized in that the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
Horizontal magnetic field bringing device, the horizontal magnetic field bringing device include being arranged on the outside of the crystal pulling chamber to described
Silicon melt applies multiple loop coils of horizontal magnetic field, and the load power of the multiple loop coil independently controls, wherein
It include the movable coil that can be moved up and down in the vertical direction of the horizontal magnetic field in the multiple loop coil.
2. system according to claim 1, which is characterized in that the horizontal magnetic field that the movable coil applies includes from institute
Silicon melt level is stated to region between the crucible bottom.
3. system according to claim 2, which is characterized in that the horizontal magnetic field bringing device includes described at least ten
Loop coil, including:
The horizontal magnetic field of application is distributed in the loop coil in the region of the silicon melt level or more；
The horizontal magnetic field of application is distributed in the silicon melt level to the loop coil in the region of the crucible bottom；
The horizontal magnetic field of application is distributed in the loop coil in crucible bottom region below.
4. system according to claim 2, which is characterized in that including in the multiple loop coil can described at least three
Moving coil.
5. system according to claim 1, which is characterized in that the system also includes be arranged in the crystal pulling chamber roof
Silicon melt level monitoring system.
6. system according to claim 5, which is characterized in that the silicon melt level monitoring system includes optical sensing
Device.
7. system according to claim 1, which is characterized in that the system also includes horizontal magnetic field automatic control module,
To be carried out automatically controlling to the horizontal magnetic field bringing device.
8. system according to claim 7, which is characterized in that the horizontal magnetic field automatic control module passes through machine learning
Controlling model carries out automatically controlling horizontal magnetic field.
9. system according to claim 8, which is characterized in that the horizontal magnetic field automatic control system includes:
Data acquisition module, to obtain the process data in crystal pulling technique, the process data include device parameter data, with
The corresponding properties of product data of the device parameter data；
Data conversion module, the process data is converted into computable standardized data；
Machine learning control module obtains horizontal magnetic field bringing device control forecasting calculate according to the process data
As a result, and being controlled automatically according to the horizontal magnetic field bringing device control forecasting result to the horizontal magnetic field bringing device
System.
10. system according to claim 8, which is characterized in that the horizontal magnetic field automatic control module controls the ring
The size of the load power of shape coil loads the order of power and/or the position of the movable coil.
11. a kind of crystal pulling method that the system using as described in claim 1-10 any one carries out, which is characterized in that drawing
The loop coil is adjusted during brilliant to adjust the distribution of the horizontal magnetic field in vertical direction.
12. according to the method for claim 11, which is characterized in that include adjusting the step of the adjustment loop coil
The size of power is loaded in the loop coil, loads the order of power and/or the position of the movable coil.
13. according to the method for claim 11, which is characterized in that keep storing the earthenware of the silicon melt during crystal pulling
The horizontal position of crucible is constant.
14. according to the method for claim 11, which is characterized in that the step of adjustment loop coil passes through machine
Learning control model is implemented.
15. according to the method for claim 14, which is characterized in that the process packet that the machine learning Controlling model is implemented
It includes:
The process data in crystal pulling technique is obtained, the process data includes device parameter data and the device parameter data
Corresponding properties of product data；
The process data is converted into computable standardized data；
Horizontal magnetic field bringing device control forecasting result is calculated according to the standardized data using neural network prediction model；
The horizontal magnetic field bringing device is controlled according to the horizontal magnetic field bringing device control forecasting result.
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| EP4321656A1 (en) * | 2022-08-09 | 2024-02-14 | Siltronic AG | Method for producing a monocrystalline crystal made of silicon |
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