CN109799534B - Diamond solution grid field effect transistor system - Google Patents
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- CN109799534B CN109799534B CN201910074815.7A CN201910074815A CN109799534B CN 109799534 B CN109799534 B CN 109799534B CN 201910074815 A CN201910074815 A CN 201910074815A CN 109799534 B CN109799534 B CN 109799534B
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 123
- 239000010432 diamond Substances 0.000 title claims abstract description 123
- 230000005669 field effect Effects 0.000 title claims abstract description 62
- 239000013535 sea water Substances 0.000 claims abstract description 21
- 238000004891 communication Methods 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 claims description 7
- 238000001069 Raman spectroscopy Methods 0.000 claims description 6
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000004047 hole gas Substances 0.000 claims description 4
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
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- 238000002360 preparation method Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/30—Assessment of water resources
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a diamond solution grid field effect transistor system and a detection method, comprising a diamond solution grid field effect transistor and a reference electrode, wherein the diamond solution grid field effect transistor and the reference electrode are mutually independent and are used for being placed in seawater at intervals; the diamond solution grid field effect transistor and the reference electrode form a capacitor; the outer end of the reference electrode is used for being connected with a voltage signal source; the diamond solution gate field effect transistor is used to connect with a voltage reader. The system utilizes the electric signals to detect and communicate, has high propagation speed and small interference in water, and can carry out long-distance propagation, thereby reducing the limitation of detection and communication distance and realizing long-distance detection and communication. The transmission mode of the electric signal improves the detection sensitivity, can detect the change of millivolt level, shortens the delay time, and the delay time is several microseconds.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a diamond solution gate field effect transistor system.
Background
Acoustic waves can be transmitted in an aqueous medium for a long distance, so that the acoustic waves are always regarded as an effective underwater information carrier, and the acoustic detection, communication and positioning navigation technologies are also always important research objects in the ocean field. However, on one hand, due to the complexity of the water medium, the sound waves are severely interfered by the reflected sound waves of the water surface, the water bottom and the objects in the water and the noise in the water in the application process; on the other hand, the sound wave has low propagation speed in water, time-varying space becomes serious, doppler expansion is serious, and the development of the underwater sound technology is limited, so that the effectiveness and reliability of detection, communication and positioning navigation are affected.
In recent years, due to the fact that the advantages of acoustic detection are weakened by quiet targets such as a quiet submarine and an unmanned submarine, the operational effectiveness of a water platform, a weapon and a preset unmanned system cannot be extremely achieved due to the speed, the bandwidth and the safety of underwater acoustic communication, countries such as Meinauguration European countries are hoped to be in non-acoustic detection and communication technologies, the investment research and development force is increased, and the underwater acoustic detection device is hoped to be a powerful supplement.
Diamond solution gate field effect transistor systems are based on electrical signals for target detection and communication. The diamond has high chemical stability, wide potential window and no need of a gate insulating layer, and the channel surface of the diamond is directly contacted with electrolyte solution, so that higher sensitivity can be obtained, the electrostatic capacitance between the electrolyte solution and the diamond interface is high and is 1-10 mu F/cm 2, and an electric double layer is formed between the interfaces. Diamond surface terminations are subject to change, and their diverse surface terminations are sensitive to a variety of targets, such as: h -, DNA, and diamond has many very excellent properties such as highest forbidden band width, highest thermal conductivity, highest critical breakdown field strength, high electron and hole mobility, high young's modulus, low poisson's ratio, and high corrosion resistance in hazardous chemical environments, and can be operated in its severe environments, known as "final semiconductors". Therefore, the diamond solution grid field effect transistor system has a very wide application prospect in water communication and detection.
Disclosure of Invention
The invention aims to solve the technical problems of the prior art, and provides a diamond solution grid field effect transistor system which utilizes electric signals to detect and communicate, has high propagation speed and small interference in water, and can carry out long-distance propagation, thereby reducing the limitation of detection and communication distance and realizing long-distance detection and communication. The transmission mode of the electric signal improves the detection sensitivity, can detect the change of millivolt level, shortens the delay time, and the delay time is several microseconds.
In order to solve the technical problems, the invention adopts the technical scheme that the diamond solution grid field effect transistor comprises a diamond solution grid field effect transistor and a reference electrode, wherein the diamond solution grid field effect transistor and the reference electrode are mutually independent and are used for being placed in seawater at intervals; the diamond solution grid field effect transistor and the reference electrode form a capacitor; the outer end of the reference electrode is used for being connected with a voltage signal source; the diamond solution grid field effect transistor is used for being connected with the voltage reader;
The reference electrode is used for: generating a varying electric field in the seawater upon receiving a varying exogenous voltage; the voltage value applied by the electric field on the diamond solution grid field effect transistor is changed, and the voltage reader displays the changed value;
Or a reference electrode for: when receiving the external voltage, generating an electric field in the seawater; and when foreign matter enters between the diamond solution gate field effect transistor and the reference electrode, the electric field intensity in the sea water is caused to change, the voltage applied to the diamond solution gate field effect transistor is changed, and the change value is displayed by the voltage reader.
Further, the diamond solution gate field effect transistor comprises a diamond substrate, a single crystal diamond epitaxial film, a drain electrode, a source electrode, a resistor and a power supply; the monocrystalline diamond epitaxial film is obtained by epitaxy on the surface of a diamond substrate, a drain electrode and a source electrode are arranged on the upper surface of the monocrystalline diamond epitaxial film at intervals, and a capacitor is formed between the source electrode and a reference electrode; one end of the resistor is connected with the drain electrode, and the other end of the resistor is connected with a positive electrode lead of the power supply; the negative electrode of the power supply is connected with a source electrode wire, and the source electrode is grounded through another wire; the resistor is also used to connect with a voltage reader.
Further, the diamond substrate is an intrinsic diamond material, the root mean square surface roughness is less than 2nm, the Raman half-peak width is less than 6cm -1, and the X-ray diffraction half-peak width is less than 0.1 degrees.
Further, the single crystal diamond epitaxial film is an intrinsic diamond material, the thickness is 0.05-50 mu M, the resistivity is greater than 100MΩ & cm, the root mean square surface roughness is less than 1nm, the Raman half-peak width is less than 5cm -1, and the X-ray diffraction half-peak width is less than 0.05 degrees.
Further, the drain electrode and the source electrode are made of one of Pt, pd, ir, au, ti metals or a combination of metals in each group of Pt/Ir and Pt/Au/Ti.
Further, the power supply is a direct current power supply.
Further, the reference electrode is an Ag/AgCl electrode or a Pt electrode.
The invention also discloses a preparation method of the diamond solution gate field effect transistor system, which is characterized by comprising the following steps:
step one, obtaining a monocrystal diamond epitaxial film on a diamond substrate by epitaxy;
Step two, forming a drain electrode and a source electrode on the surface of the monocrystal diamond epitaxial film;
step three, connecting one end of the resistor with the drain electrode through a lead;
step four, connecting the other end of the resistor with the positive electrode of the power supply through a wire;
Step five, connecting the negative electrode of the power supply with the source electrode through a lead;
Step six, grounding the source electrode through a lead;
step seven, connecting the square wave generator with a reference electrode through a lead;
And step eight, grounding the square wave generator through another wire.
The invention also discloses a testing method of the diamond solution gate field effect transistor system, which comprises the following steps:
Placing the diamond solution grid field effect transistor and the reference electrode in seawater at intervals; applying voltage on the reference electrode, forming an electric field in seawater, and conducting electricity between the drain electrode and the source electrode through two-dimensional hole gas under the action of the electric field, wherein the reference electrode and the source electrode form a capacitor;
When foreign matters exist between the reference electrode and the diamond solution grid field effect transistor, the capacitance value between the reference electrode and the source electrode is changed, and the voltage applied between the drain electrode and the source electrode through the electric field is changed, so that the voltage on the resistor is changed;
when the voltage applied to the reference electrode is changed, the voltage applied between the drain electrode and the source electrode through the electric field is changed, the voltage on the resistor is changed, and a change value is obtained by the voltage reader, namely, a signal at the voltage signal source is transmitted to the voltage reader, so that the communication between the voltage signal source and the voltage reader is completed;
or when the voltage applied to the reference electrode is constant and the value of the voltage reader is changed, the foreign matter is indicated to enter between the diamond solution gate field effect transistor and the reference electrode.
The diamond solution grid field effect transistor system has the following advantages: 1. the electric signal is utilized for transmission, the placement distance of the reference electrode is adjustable, the detection distance is long, the propagation speed is high, the interference in water is small, and the limitation of the detection and communication distance is reduced. 2. The detection sensitivity is improved, the millivolt-level change can be detected, the delay time is shortened, and the delay time is a few microseconds. 3. Greatly expands the communication and detection means in water and promotes the development of the communication and detection technology in water.
Drawings
Fig. 1 is a schematic diagram of a diamond solution gate field effect transistor system.
Wherein: a. a diamond solution gate field effect transistor; 1. a diamond substrate; 2. a single crystal diamond epitaxial film; 3. a drain electrode; 4. a source electrode; 5. a resistor 6. A power supply; 7. a reference electrode; 8. a square wave generator; 9. a voltage reader.
Detailed Description
The diamond solution grid field effect transistor system comprises a diamond solution grid field effect transistor a and a reference electrode 7, wherein the diamond solution grid field effect transistor a and the reference electrode 7 are mutually independent and are used for being placed in seawater at intervals; the diamond solution grid field effect transistor a and the reference electrode 7 form a capacitor; the outer end of the reference electrode 7 is used for being connected with a voltage signal source; the diamond solution gate field effect transistor a is used for being connected with the voltage reader 9; the reference electrode 7 is for: generating a varying electric field in the seawater upon receiving a varying exogenous voltage; and the voltage value applied by the electric field on the diamond solution gate field effect transistor a is changed, and the voltage reader 9 displays the changed value;
Or the reference electrode 7 is used for: when receiving the external voltage with fixed value, generating an electric field in the sea water; and when foreign matter enters between the diamond solution gate field effect transistor a and the reference electrode 7, the electric field intensity in the sea water is caused to change, the voltage applied to the diamond solution gate field effect transistor a is changed, and the change value is displayed by the voltage reader 9.
The diamond solution gate field effect transistor a comprises a diamond substrate 1, a single crystal diamond epitaxial film 2, a drain electrode 3, a source electrode 4, a resistor 5 and a power supply 6; the monocrystalline diamond epitaxial film 2 is obtained by epitaxy on the surface of the diamond substrate 1, a drain electrode 3 and a source electrode 4 are arranged on the upper surface of the monocrystalline diamond epitaxial film 2 at intervals, and a capacitor is formed between the source electrode 4 and a reference electrode 7;
one end of the resistor 5 is connected with the drain electrode 3, and the other end is connected with a positive electrode lead of the power supply 6; the cathode of the power supply 6 is connected with the lead of the source electrode 4, and the source electrode 4 is grounded through the other lead; the resistor 5 is also used in connection with a voltage reader 9. And the electric signals are used for transmission, so that the limitation of detection and communication distance is reduced.
In the conventional diamond field effect transistor, conduction is performed between the drain electrode 3 and the source electrode 4 by using two-dimensional hole gas in the single crystal diamond epitaxial film 2. Below the gate is an insulating dielectric, and the diamond surface between the gate and the drain 3 and source 4 forms a capacitor. When the voltage V on the gate is changed by fixing the voltage value between the drain 3 and the source 4, the voltage applied between the drain 3 and the source 4 by the electric field is also changed, and the current between the drain 3 and the source is changed. Because the resistor 5 is connected in series with the drain 3 and the source 4, when the current between the drain 3 and the source changes, the current on the resistor 5 also changes together, the voltage value of the power supply 6 is unchanged, and the value of the resistor 5 is fixed, so that the voltage on the resistor 5 changes. The voltage on 5 is read by a voltage reader 9 to obtain the required information.
When the thickness of the dielectric is infinitely increased, the gate is distanced from the diamond surface between the drain 3 and the source 4 by the same distance. The principle of operation of the system is unchanged, no matter how far the gate is from. When the dielectric is replaced with seawater and the grid is replaced with a reference electrode 7, the reference electrode 7 is insulated from the housing, and the reference electrode 7 can be placed at infinity. By applying a square wave voltage to the reference electrode 7 via the square wave generator 8, the resistor 5 will output a corresponding square wave voltage. When the detected substance, the metal of which the outer shell is conductive, enters the seawater between the reference electrode 7 and the drain electrode 3 and the source electrode 4, the capacitance value between the reference electrode 7 and the source electrode 4 changes, the change of the capacitance value causes the change of the drain electrode 3 and the source electrode 4, the change of the capacitance value between the drain electrode 3 and the source electrode 4 causes the current on the resistor 5 to change, the voltage signal on the resistor 5 changes, and the voltage signal changed on the resistor 5 is read by the voltage reader 9, so that the foreign matter can be detected. Similarly, the information to be transmitted is changed into a voltage signal and applied to the reference electrode 7 through the square wave generator 8, and the voltage signal changed on the resistor 5 is read by the voltage reader 9 by using the same principle, and the transmitted information can be known by interpreting the read voltage signal.
The diamond solution gate field effect transistor a comprises a diamond substrate 1, a single crystal diamond epitaxial film 2, a drain electrode 3, a source electrode 4, a resistor 5 and a power supply 6; the monocrystalline diamond epitaxial film 2 is obtained by epitaxy on the surface of the diamond substrate 1, a drain electrode 3 and a source electrode 4 are arranged on the upper surface of the monocrystalline diamond epitaxial film 2 at intervals, and a capacitor is formed between the source electrode 4 and a reference electrode 7; one end of the resistor 5 is connected with the drain electrode 3, and the other end is connected with a positive electrode lead of the power supply 6; the cathode of the power supply 6 is connected with the lead of the source electrode 4, and the source electrode 4 is grounded through the other lead; the resistor 5 is also used for connection to a voltage reader 9.
The diamond substrate 1 is an intrinsic diamond material, the root mean square surface roughness is less than 2nm, the Raman half-peak width is less than 6cm -1, and the X-ray diffraction half-peak width is less than 0.1 degrees. The single crystal diamond epitaxial film 2 is an intrinsic diamond material, the thickness is 0.05-50 mu M, the resistivity is more than 100MΩ & cm, the root mean square surface roughness is less than 1nm, the Raman half-peak width is less than 5cm < -1 >, and the X-ray diffraction half-peak width is less than 0.05 degrees. The drain electrode 3 and the source electrode 4 are made of one of Pt, pd, ir, au, ti metals or a combination of metals in each group of Pt/Ir and Pt/Au/Ti. The drain electrode 3 and the source electrode 4 may form ohmic contact with the single crystal diamond epitaxial thin film 2. The resistor 5 has high power, good heat dissipation performance, high temperature resistance, impact resistance and moisture resistance; the power supply 6 is a direct current power supply. The reference electrode 7 is an Ag/AgCl electrode or a Pt electrode. The outer layer of each wire is provided with an insulating protective sleeve, and the wire is waterproof, high-temperature resistant and corrosion resistant.
The preparation method of the diamond solution gate field effect transistor system comprises the following steps:
Step one, carrying out acid-base treatment on a diamond substrate 1, drying, carrying out epitaxy on the diamond substrate 1 to obtain a monocrystalline diamond epitaxial film 2, and cleaning the surface of the monocrystalline diamond epitaxial film 2; the technology of the epitaxial single crystal diamond epitaxial film 2 is a microwave plasma vapor phase chemical deposition technology, a hot wire chemical vapor phase deposition technology, a direct current jet plasma technology and the like;
step two, forming a drain electrode 3 and a source electrode 4 on the upper surface of the single crystal diamond epitaxial film 2 by utilizing a photoetching technology, a metal deposition technology and a stripping technology;
Step three, connecting one end of the resistor 5 with the drain electrode 3 through a wire;
step four, connecting the other end of the resistor 5 with the positive electrode of the power supply 6 through a wire;
step five, connecting the cathode of the power supply 6 with the source electrode 4 through a lead;
Step six, grounding the source electrode 4 through a lead;
Step seven, connecting the square wave generator 8 with the reference electrode 7 through a lead;
Step eight, the square wave generator 8 is grounded through another wire.
To better illustrate the preparation method, a specific example is given below:
1. The diamond substrate 1 was cleaned using a standard acid-base cleaning process to remove non-diamond phase from the surface, then the diamond substrate 1 was cleaned using alcohol, acetone, deionized water, and the diamond substrate 1 was dried using nitrogen.
2. A 200nm thick single crystal diamond epitaxial film 2 was grown on a diamond substrate 1 using microwave plasma chemical vapour deposition techniques. The growth conditions are as follows: the power is 1100W, the chamber pressure is 45Torr, and the total gas flow is 510sccm.
3. Spin-coating a layer of KXN5735-L0 photoresist on the surface of a sample, heating the sample on a hot plate at 100 ℃ for 90 seconds, using an ultraviolet exposure machine for 2 seconds, heating the sample on a hot plate at 125 ℃ for 90 seconds, and finally soaking the sample in a developing solution for 2 minutes to finish the transfer of source and drain electrode patterns to the sample; a layer of 200nm gold was deposited on the sample surface using electron beam evaporation under the following experimental conditions: the cavity pressure is 5X 10 -4 Pa, and the room temperature is reached; the sample was then immersed in acetone, and the sample was peeled off to obtain a drain electrode 3 and a source electrode 4, with a distance between the drain electrode 3 and the source electrode 4 of 200 μm.
4. Wires are soldered to the drain electrode 3 and the source electrode 4, respectively. The welding method is soldering.
5. One end of the resistor 5 is connected with the drain electrode 3 through a wire, and the other end is connected with the positive electrode of the power supply 6 through a wire; the negative electrode of the power supply 6 is connected with the source electrode 4 through a lead; the lead is connected with the cathode of the power supply 6 and grounded.
6. The square wave generator 8 is wired to the reference electrode 7 and grounded outside 500 meters.
The invention also discloses a testing method of the diamond solution gate field effect transistor system, which comprises the following steps:
placing the diamond solution grid field effect transistor a and the reference electrode 7 in seawater at intervals; applying voltage on the reference electrode 7, forming an electric field in seawater, conducting electricity between the drain electrode 3 and the source electrode 4 through two-dimensional hole gas under the action of the electric field, and forming a capacitor by the reference electrode 7 and the source electrode 4;
When a foreign matter exists between the reference electrode 7 and the diamond solution gate field effect transistor a, the capacitance value between the reference electrode 7 and the source electrode 4 changes, and the voltage applied between the drain electrode 3 and the source electrode 4 by the electric field changes, so that the voltage across the resistor 5 changes;
When the voltage applied to the reference electrode 7 is changed, the voltage applied between the drain electrode 3 and the source electrode 4 by the electric field is changed, the voltage on the resistor 5 is changed, a change value is obtained by the voltage reader 9, that is, a signal at the voltage signal source is transmitted to the voltage reader 9, and the communication between the voltage signal source and the voltage reader 9 is completed;
Or when the voltage applied to the reference electrode 7 is constant and the value of the voltage reader 9 is changed, it is indicated that foreign matter is introduced between the diamond solution gate field effect transistor a and the reference electrode 7. Wherein the foreign body housing is a conductive metal.
Claims (7)
1. The diamond solution grid field effect transistor system is characterized by comprising a diamond solution grid field effect transistor (a) and a reference electrode (7), wherein the diamond solution grid field effect transistor (a) and the reference electrode (7) are mutually independent and are used for being placed in seawater at intervals; the diamond solution grid field effect transistor (a) and the reference electrode (7) form a capacitor; the outer end of the reference electrode (7) is used for being connected with a voltage signal source; the diamond solution gate field effect transistor (a) is used for being connected with a voltage reader (9);
The reference electrode (7) is used for: generating a varying electric field in the seawater upon receiving a varying exogenous voltage; and the electric field changes in the voltage value applied by the diamond solution gate field effect transistor (a), and the voltage reader (9) displays the changed value;
or the reference electrode (7) is used for: when receiving the external voltage, generating an electric field in the seawater; when foreign matter enters between the diamond solution grid field effect transistor (a) and the reference electrode (7), the electric field intensity in the seawater is changed, the voltage applied to the diamond solution grid field effect transistor (a) is changed, and the voltage reader (9) displays the change value;
The diamond solution gate field effect transistor (a) comprises a diamond substrate (1), a single crystal diamond epitaxial film (2), a drain electrode (3), a source electrode (4), a resistor (5) and a power supply (6); the single crystal diamond epitaxial film (2) is obtained by epitaxy on the surface of a diamond substrate (1), a drain electrode (3) and a source electrode (4) are arranged on the upper surface of the single crystal diamond epitaxial film (2) at intervals, and a capacitor is formed between the source electrode (4) and a reference electrode (7);
one end of the resistor (5) is connected with the drain electrode (3), and the other end of the resistor is connected with a positive electrode lead of the power supply (6); the negative electrode of the power supply (6) is connected with a lead of the source electrode (4), and the source electrode (4) is grounded through another lead; the resistor (5) is also used for being connected with a voltage reader (9);
the drain electrode (3) and the source electrode (4) are made of one of Pt, pd, ir, au, ti metals or a combination of metals in each group of Pt/Ir and Pt/Au/Ti.
2. A diamond solution gate field effect transistor system according to claim 1, wherein the diamond substrate (1) is an intrinsic diamond material, the root mean square surface roughness is less than 2nm, the raman half-peak width is less than 6cm -1, and the X-ray diffraction half-peak width is less than 0.1 °.
3. A diamond solution gate field effect transistor system according to claim 2, characterized in that the single crystal diamond epitaxial thin film (2) is an intrinsic diamond material with a thickness of 0.05-50 μm, a resistivity of more than 100mΩ -cm, a root mean square surface roughness of less than 1nm, a raman half-peak width of less than 5cm -1, and an X-ray diffraction half-peak width of less than 0.05 °.
4. A diamond solution gate field effect transistor system according to claim 3, wherein the power supply (6) is a dc power supply.
5. A diamond solution gate field effect transistor system according to claim 4, wherein the reference electrode (7) is an Ag/AgCl electrode or a Pt electrode.
6. A method of testing a diamond solution gate field effect transistor system according to any one of claims 1 to 5, comprising:
Placing the diamond solution grid field effect transistor (a) and the reference electrode (7) in seawater at intervals; applying voltage to a reference electrode (7), forming an electric field in seawater, and conducting electricity between the drain electrode (3) and the source electrode (4) through two-dimensional hole gas under the action of the electric field, wherein the reference electrode (7) and the source electrode (4) form a capacitor;
When a foreign matter exists between the reference electrode (7) and the diamond solution gate field effect transistor (a), the capacitance value between the reference electrode (7) and the source electrode (4) changes, and the voltage applied between the drain electrode (3) and the source electrode (4) through an electric field changes, so that the voltage on the resistor (5) changes;
When the voltage applied to the reference electrode (7) is changed, the voltage applied between the drain electrode (3) and the source electrode (4) through an electric field is changed, the voltage on the resistor (5) is changed, a change value is obtained by the voltage reader (9), namely, a signal at the voltage signal source is transmitted to the voltage reader (9), and communication between the voltage signal source and the voltage reader (9) is completed;
or when the voltage applied to the reference electrode (7) is constant, and the value of the voltage reader (9) is changed, the foreign matter is indicated to enter between the diamond solution grid field effect transistor (a) and the reference electrode (7).
7. A method of manufacturing a diamond solution gate field effect transistor system according to claim 1, comprising the steps of:
Step one, obtaining a monocrystal diamond epitaxial film (2) by epitaxy on a diamond substrate (1);
step two, forming a drain electrode (3) and a source electrode (4) on the surface of the monocrystal diamond epitaxial film (2);
Step three, connecting one end of the resistor (5) with the drain electrode (3) through a lead;
Step four, connecting the other end of the resistor (5) with the positive electrode of the power supply (6) through a wire;
step five, connecting the cathode of the power supply (6) with the source (4) through a lead;
step six, grounding the source electrode (4) through a lead;
Step seven, connecting the square wave generator (8) with a reference electrode (7) through a lead;
and step eight, grounding the square wave generator (8) through another wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910074815.7A CN109799534B (en) | 2019-01-25 | 2019-01-25 | Diamond solution grid field effect transistor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910074815.7A CN109799534B (en) | 2019-01-25 | 2019-01-25 | Diamond solution grid field effect transistor system |
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| Publication Number | Publication Date |
|---|---|
| CN109799534A CN109799534A (en) | 2019-05-24 |
| CN109799534B true CN109799534B (en) | 2024-06-18 |
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