CN109794703A - Au-Ga solder - Google Patents
Au-Ga solder Download PDFInfo
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- CN109794703A CN109794703A CN201910072707.6A CN201910072707A CN109794703A CN 109794703 A CN109794703 A CN 109794703A CN 201910072707 A CN201910072707 A CN 201910072707A CN 109794703 A CN109794703 A CN 109794703A
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Abstract
A kind of Au-Ga solder, chemical component is by weight percent: 29%~31%Ga, 0.001%~0.05% Ni, 0.001%~0.05% Al, surplus Au.Using commercially available ingot, gallium, nickel plate, aluminium sheet, by design composition proportion, gold is placed in graphite crucible with gallium, melting is carried out in intermediate frequency furnace, is heated to about 1200 DEG C, after gold is completely melt into uniform liquid with gallium, it is added with proof gold foil cladding powder shape nickel powder, aluminium powder, and is stirred evenly.Optimized screening determining coverture is added when smelting.By casting, rolling, cutting to get to the weld tabs for needing size.Product of the present invention can be used for the connection and encapsulation of high-power, high integration electron device package, especially chip.
Description
Technical field
The present invention relates to the noble metal solder fields of Electronic Packaging industry, and in particular to a kind of Au-Ga solder.
Background technique
Currently, in high-power, high integration electron device package, the especially connection and Packaging Industry of chip, largely
Using noble metal solder.In recent years, IGBT product manufacture demand drive under, noble metal solder using more and more extensive.
Currently, the noble metal solder for Electronic Packaging field mainly has Au-Sn, Au-Si, Au-Ge etc., with good wetability
With mobility, good thermal conductivity and heat-proof corrosion-resistant, high stability, low vapour pressure is easy and semiconductor Si
Or GaAs chip forms eutectic bonding, still, fusing point is below 365 DEG C, is unable to satisfy high-power, high integration electronics device
The needs of part encapsulation.US201414460904 discloses a kind of Au-Ga-In brazing material, and solidus temperature highest only has
It is 390 DEG C, still relatively low.Therefore, it is badly in need of developing auri solder of the solidus temperature at 450 DEG C or more, to meet high-speed rail use
The needs of IGBT device manufacture, this invention " Au-Ga solder ", is to complete under this technical background.
Summary of the invention
The purpose of this invention is to provide a kind of electric conductivity and thermal conductivity with excellent wetting and spreading performance, excellent,
It can be used for the solid phase of the connection and encapsulation of high-power, high integration electron device package (such as IGBT device), especially chip
Auri solder of the line temperature at 450 DEG C or more.For this purpose, a kind of Au-Ga solder of this invention, chemical component presses quality percentage
Number is: 29%~31% Ga, 0.001%~0.05% Ni, 0.001%~0.05% Al, surplus Au, solidus
Temperature is 454 DEG C, and liquidus temperature is 461 DEG C, meets above-mentioned requirements.
Using commercially available ingot, gallium, nickel plate, aluminium sheet, by design composition proportion, gold is placed in graphite crucible with gallium
In, melting is carried out in intermediate frequency furnace, is heated to about 1200 DEG C, after gold is completely melt into uniform liquid with gallium, with proof gold foil packet
Cover powdered nickel powder, aluminium powder is added, and stirs evenly.Optimized screening determining coverture is added when smelting.By casting, rolling
System cuts to get to the weld tabs for needing size.Product of the present invention can be used for high-power, high integration electron device package, especially
It is the connection and encapsulation of chip.
Au-Ga solder of the invention, when smelting, since the fusing point of pure gallium is 29.8 DEG C, liquid gallium is not easy precise.
It is saved therefore, it is necessary to which metal Ga is first put into refrigerator cold-storage, then, the proportion of precise Ga under " solid-state " guarantees Au-Ga
The composition range of solder is accurate.
To guarantee that the Au-Ga solder of invention has excellent wetting and spreading property, while its solidus temperature can reach
It to 454 DEG C, is found by repetition test, the Ni of addition 0.001%~0.05%, 0.001%~0.05% Al can be improved
The fusion temperature range of Au-Ga solder, still, the additive amount of Ni, Al are not preferably greater than 0.05%.By to solder optimizing components,
Composition range after optimization, neoteric Au-Ga solder performance indexes reach requirement.
Specific embodiment
The critical problem and creativeness that this invention mainly solves are:
1) it by addition trace of Al, solves the problems, such as " deoxidation " when Au-Ga solder is smelted and is brazed, greatly reduces Au-Ga
Oxygen content in solder itself and solder joint, so that Au, Ga element in solder are not oxidized during the brazing process with excellent
Wetting and spreading performance, to improve solder joint quality.It is important to note that since Au, Ga element are not easy itself
Oxidation, but when being applied to the manufacture of " high-end " electronic device, even if the oxygen content (such as oxygen content >=30ppm) of denier
It will affect solder joint quality.Therefore it is necessary to by adding micro Al, to guarantee that the oxygen in Au-Ga solder and its solder joint contains
Amount is reduced to 20ppm or less.But the additive amount of Al element cannot be too many, after being higher than 0.05%, will affect Au-Ga solder
Wetting and spreading performance, so that soldered fitting shearing strength declines instead.But if the additional amount of Al less than 0.001%, " takes off
Expection is not achieved in oxygen " effect, so that soldered fitting shearing strength can also reduce.
Through theoretical calculation and verification experimental verification, the additive amount (mass percent) of Al is controlled within 0.001%~0.05%
Most preferably.
2) by 12 groups of 60 alloy formula experimental studies discoveries, micro high-melting-point element is added in Au-Ga solder,
Solidus, the liquidus temperature of Au-Ga solder can be improved, to meet high-power, high integration used for sealing electronic device
The needs of solder.It is found by optimizing components and Braze tests, the Ni element that " can be infinitely dissolved " in Au element, Ke Yixian
Write the solidus for improving Au-Ga solder, liquidus temperature.Test discovery, the Ni element of addition 0.001%~0.05% can be with
Its solidus temperature is improved from 449 DEG C to 454 DEG C, liquidus temperature is improved from 456 DEG C to 461 DEG C.
But the additive amount of Ni element cannot be too many, after being higher than 0.05%, will affect the wetting and spreading of Au-Ga solder
Can, so that soldered fitting shearing strength declines instead.But if the additional amount of Ni less than 0.001%, to Au-Ga solder
The raising of solid, liquid liquidus temperature is not significant.
3) from comparative example 3 and comparative example 4 it can also be seen that Ni and Al element also have " synergistic effect ".Individually add it
A kind of middle element, the solid, liquid liquidus temperature and soldered fitting shearing strength of Au-Ga solder are below adds Ni and Al element simultaneously
Embodiment 1 to embodiment 5.
The quality recipe ratio of " Au-Ga solder " according to the present invention describes a specific embodiment of the invention.
Embodiment one
A kind of Au-Ga solder, chemical component is by weight percent: 29% Ga, 0.05% Ni, and 0.001% Al is remaining
Amount is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel and nothing
Oxygen copper sheet (thickness is 2mm), soldered fitting shearing strength are 60MPa ± 2MPa.
Embodiment two
A kind of Au-Ga solder, chemical component is by weight percent: 31% Ga, 0.001% Ni, and 0.05% Al is remaining
Amount is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel and nothing
Oxygen copper sheet (thickness is 2mm), soldered fitting shearing strength are 60MPa ± 2MPa.
Embodiment three
A kind of Au-Ga solder, chemical component is by weight percent: 30% Ga, 0.01% Ni, and 0.01% Al is remaining
Amount is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel and nothing
Oxygen copper sheet (thickness is 2mm), soldered fitting shearing strength are 60MPa ± 2MPa.
Example IV
A kind of Au-Ga solder, chemical component is by weight percent: 29.5% Ga, 0.001% Ni, 0.01% Al,
Surplus is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, be brazed pure nickel with
No-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength are 60MPa ± 2MPa.
Embodiment five
A kind of Au-Ga solder, chemical component is by weight percent: 30.5% Ga, 0.01% Ni, 0.001% Al,
Surplus is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, be brazed pure nickel with
No-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength are 60MPa ± 2MPa.
Comparative example 1
A kind of Au-Ga solder, chemical component is by weight percent: 30.5% Ga, 0.001% Al, 0.06% Ni,
Surplus is Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, be brazed pure nickel with
No-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength are 48MPa ± 3MPa.
Comparative example 2
A kind of Au-Ga solder, chemical component is by weight percent: 30% Ga, 0.001% Al, 0.0009% Ni,
Surplus is Au.Its solidus temperature is 449 DEG C, and liquidus temperature is 455 DEG C.In 490 DEG C to 510 DEG C ranges, be brazed pure nickel with
No-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength are 52MPa ± 2MPa.
Comparative example 3
A kind of Au-Ga solder, chemical component is by weight percent: 29.5% Ga, 0.01% Al, surplus Au.Its
Solidus temperature is 449 DEG C, and liquidus temperature is 454 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel and no-oxygen copper plate is (thick
Degree is 2mm), soldered fitting shearing strength is 47MPa ± 3MPa.
Comparative example 4
A kind of Au-Ga solder, chemical component is by weight percent: 29.5% Ga, 0.01% Ni, surplus Au.Its
Solidus temperature is 453 DEG C, and liquidus temperature is 459 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel and no-oxygen copper plate is (thick
Degree is 2mm), soldered fitting shearing strength is 50MPa ± 2MPa.
Comparative example 5
A kind of Au-Ga solder, chemical component is by weight percent: 30.5% Ga, 0.0009% Al, 0.02%
Ni, surplus Au.Its solidus temperature is 454 DEG C, and liquidus temperature is 461 DEG C.In 490 DEG C to 510 DEG C ranges, it is brazed pure nickel
With no-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength is 46MPa ± 3MPa.
Comparative example 6
A kind of Au-Ga solder, chemical component is by weight percent: 30.5% Ga, 0.06% Al, 0.02% Ni,
Surplus is Au.Its solidus temperature is 453 DEG C, and liquidus temperature is 459 DEG C.In 490 DEG C to 510 DEG C ranges, be brazed pure nickel with
No-oxygen copper plate (thickness is 2mm), soldered fitting shearing strength are 49MPa ± 2MPa.
Claims (1)
1. a kind of Au-Ga solder, chemical component is by weight percent: 29%~31% Ga, 0.001%~0.05%
Ni, 0.001%~0.05% Al, surplus Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072707.6A CN109794703A (en) | 2019-01-25 | 2019-01-25 | Au-Ga solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072707.6A CN109794703A (en) | 2019-01-25 | 2019-01-25 | Au-Ga solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109794703A true CN109794703A (en) | 2019-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910072707.6A Withdrawn CN109794703A (en) | 2019-01-25 | 2019-01-25 | Au-Ga solder |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349863A (en) * | 2019-06-29 | 2019-10-18 | 汕尾市索思电子封装材料有限公司 | A kind of gold gallium weld tabs preparation method and golden gallium weld tabs |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3141238A (en) * | 1960-11-22 | 1964-07-21 | Jr George G Harman | Method of low temperature bonding for subsequent high temperature use |
| JPS62166095A (en) * | 1986-01-17 | 1987-07-22 | Mitsubishi Heavy Ind Ltd | Au-ga brazing filler metal and its preparation |
| CN101096730A (en) * | 2006-06-26 | 2008-01-02 | 日立电线株式会社 | Pb-free sn-based material, wiring conductor, terminal connecting assembly, and pb-free solder alloy |
| CN101412159A (en) * | 2008-11-24 | 2009-04-22 | 天津市宏远电子有限公司 | Lead-free solder alloy for hot-dipping tin-coated copper wire |
| CN109079363A (en) * | 2018-09-26 | 2018-12-25 | 北京航空航天大学 | A kind of sealing-in solder of low-vapor pressure low melting point |
-
2019
- 2019-01-25 CN CN201910072707.6A patent/CN109794703A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3141238A (en) * | 1960-11-22 | 1964-07-21 | Jr George G Harman | Method of low temperature bonding for subsequent high temperature use |
| JPS62166095A (en) * | 1986-01-17 | 1987-07-22 | Mitsubishi Heavy Ind Ltd | Au-ga brazing filler metal and its preparation |
| CN101096730A (en) * | 2006-06-26 | 2008-01-02 | 日立电线株式会社 | Pb-free sn-based material, wiring conductor, terminal connecting assembly, and pb-free solder alloy |
| CN101412159A (en) * | 2008-11-24 | 2009-04-22 | 天津市宏远电子有限公司 | Lead-free solder alloy for hot-dipping tin-coated copper wire |
| CN109079363A (en) * | 2018-09-26 | 2018-12-25 | 北京航空航天大学 | A kind of sealing-in solder of low-vapor pressure low melting point |
Non-Patent Citations (1)
| Title |
|---|
| 刘泽光: "金锡钎料性能及应用", 《电子与封装》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349863A (en) * | 2019-06-29 | 2019-10-18 | 汕尾市索思电子封装材料有限公司 | A kind of gold gallium weld tabs preparation method and golden gallium weld tabs |
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