CN109791371A - Pattern plotter device and pattern plotter method - Google Patents

Pattern plotter device and pattern plotter method Download PDF

Info

Publication number
CN109791371A
CN109791371A CN201780061213.7A CN201780061213A CN109791371A CN 109791371 A CN109791371 A CN 109791371A CN 201780061213 A CN201780061213 A CN 201780061213A CN 109791371 A CN109791371 A CN 109791371A
Authority
CN
China
Prior art keywords
light beam
substrate
scanning
pattern
luminous point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780061213.7A
Other languages
Chinese (zh)
Other versions
CN109791371B (en
Inventor
加藤正纪
中山修一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to CN202110922904.XA priority Critical patent/CN113552778B/en
Publication of CN109791371A publication Critical patent/CN109791371A/en
Application granted granted Critical
Publication of CN109791371B publication Critical patent/CN109791371B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10Scanning systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10Scanning systems
    • G02B26/12Scanning systems using multifaceted mirrors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits

Abstract

Pattern plotter device (EX) of the invention has: position measurement unit (MU), and measurement should be by the position for being exposed region on the substrate (P) that multiple delineation units (Un) describes;1st adjustment member (HVP), it is in order to which the position for making the pattern using each description of delineation unit (Un) reduce relative to the location error for being exposed region, and be measured according to utilization position measurement unit (MU) is adjusted the position of each luminous point (SP) based on delineation unit (Un) in the movement of substrate (P) on the 2nd direction;And the 2nd adjustment member (AOM1), its be in order to make using delineation unit (Un) each description pattern on the 2nd direction bonding error reduce, and to based on delineation unit (Un) each luminous point (SP) position in the movement of substrate (P) be higher than the 1st adjustment member (HVP) responsiveness be adjusted on the 2nd direction.

Description

Pattern plotter device and pattern plotter method
Technical field
The pattern plotter device of depicting pattern the present invention relates to a kind of spot scan for making to expose on irradiated body And pattern plotter method.
Background technique
As the drawing apparatus for using polygonal rotating mirror, such as it has been known that there is a kind of image forming apparatus, which forms dress It sets and has multiple laser explosure portions with polygonal mirror as disclosed in Japanese Patent Laid-Open 2008-200964 bulletin, by The a part (end) for the scanning area on main scanning direction that polygonal mirror scans exposing light beam overlaps, by coming from multiple laser The exposing light beam of exposure portion describes image with sharing.In the device of Japanese Patent Laid-Open 2008-200964 bulletin, in order to subtract Less than the regional exposure light beam to overlap in the end of scanning area due to the inclined difference in the face of multiple reflectings surface of polygonal mirror in The case where being deviated on the sub-scanning direction orthogonal with main scanning direction, and in each polygonal mirror for making multiple laser explosure portions When rotation is synchronous, in the overlapping area image of the image described by 1 polygonal mirror and the image described by another polygonal mirror Sub-scanning direction the mode that tails off of offset, adjust the combination (angular phase of direction of rotation) of the reflecting surface of 2 polygonal mirrors. Also, also disclosing in Japanese Patent Laid-Open 2008-200964 bulletin has following content, that is, setting makes swashing comprising polygonal mirror The light exposure portion mechanism mobile mechanically along sub-scanning direction, is adjusted in a manner of reducing the offset of overlapping area of image It is whole.
Summary of the invention
1st aspect of the invention is a kind of pattern plotter device, is to make to be concentrated on retouching on substrate in the form of luminous point Draw light beam in the 1st side scan up and the delineation unit of depicting pattern on above-mentioned 1st direction configured with multiple, by above-mentioned base Movement on the 2nd direction of plate intersected with above-mentioned 1st direction, and by the pattern described using multiple above-mentioned delineation units in upper State and engage and described on the 1st direction, and have: position measurement unit, measurement should be described by above-mentioned multiple delineation units Aforesaid substrate on the position for being exposed region;1st adjustment member is to make to retouch using each of above-mentioned delineation unit The pattern drawn is reduced relative to the above-mentioned location error for being exposed region, and according to the position measured using above-mentioned position measurement unit It sets and the position of each above-mentioned luminous point based on above-mentioned delineation unit is carried out in aforesaid substrate is mobile on above-mentioned 2nd direction Adjustment;And the 2nd adjustment member, it is to make using the pattern of each description of above-mentioned delineation unit on above-mentioned 2nd direction Bonding error reduce, and to the position of each above-mentioned luminous point based on above-mentioned delineation unit in the movement of aforesaid substrate with Responsiveness higher than above-mentioned 1st adjustment member is adjusted on above-mentioned 2nd direction.
2nd aspect of the invention is a kind of pattern plotter method, is the multiple delineation units made from along the configuration of the 1st direction Each projection description light beam luminous point in being scanned on substrate on above-mentioned 1st direction, and make aforesaid substrate in it is upper It states and is moved on the 2nd direction of the 1st direction intersection, the pattern of each description of above-mentioned multiple delineation units will be utilized in the above-mentioned 1st Engage and described on direction, and include: the measurement stage is that detection is formed in aforesaid substrate in aforesaid substrate is mobile The position of reference pattern, and measure the position for being exposed region on aforesaid substrate;1st adjusting stage was in order to according to upper State the position measured in the measurement stage make using each description of above-mentioned delineation unit pattern be aligned it is above-mentioned be exposed region, And it is enterprising in above-mentioned 2nd direction in the movement of aforesaid substrate to the position of each above-mentioned luminous point based on above-mentioned delineation unit Row adjustment;And the 2nd adjusting stage, it is to make using the pattern of each description of above-mentioned delineation unit in above-mentioned 2nd direction On bonding error reduce, and to position more above-mentioned 1st adjusting stage of each above-mentioned luminous point based on above-mentioned delineation unit More imperceptibly it is adjusted on above-mentioned 2nd direction.
3rd aspect of the invention is a kind of pattern plotter device, is had: polygonal rotating mirror, be depicted in basis should Pattern on substrate carries out the description light beam after intensity modulation in carrying out one-dimensional scanning on main scanning direction;And optical system is used in scanning System, the above-mentioned description light beam for having carried out one-dimensional scanning is concentrated on aforesaid substrate in the form of luminous point;And by above-mentioned light The scanning of the above-mentioned main scanning direction of point and the subscan side of aforesaid substrate and above-mentioned luminous point intersected with above-mentioned main scanning direction Upward relative movement and in depicting pattern on aforesaid substrate, and have: the 1st adjustment member of mechanical optics is in order to right The above-mentioned luminous point of one-dimensional scanning is carried out on above-mentioned main scanning direction in adjusting position on above-mentioned sub-scanning direction, and be configured at into It is in the optical path of above-mentioned description light beam before being incident upon above-mentioned polygonal rotating mirror or upper from above-mentioned polygonal rotating mirror to aforesaid substrate It states in the optical path for describing light beam;And the 2nd adjustment member of photo electric, it is in order to one-dimensional to being carried out on above-mentioned main scanning direction The above-mentioned luminous point of scanning is configured at upper before being incident to above-mentioned polygonal rotating mirror in adjusting position on above-mentioned sub-scanning direction It states in the optical path for describing light beam and in the optical path nearby of above-mentioned 1st adjustment member.
Detailed description of the invention
Fig. 1 is to indicate that the device of the pattern exposure device of the 1st implementation form comprising implementing exposure-processed to substrate manufactures The figure of the schematic configuration of system.
Fig. 2 is the composition figure for indicating the composition of exposure device of Fig. 1.
Fig. 3 is the detailed figure for being shown in the state that rotating cylinder shown in Fig. 2 is wound with substrate.
Fig. 4 is the figure for being shown in the description line and the alignment mark being formed on substrate of the luminous point scanned on substrate.
Fig. 5 is the figure for indicating the optics of scanning element shown in Fig. 2 and constituting.
Fig. 6 is the composition figure of light beam switching part shown in Fig. 2.
Fig. 7 is the figure for indicating the composition of light supply apparatus shown in Fig. 2.
Fig. 8 is the clock signal and description bit string money for indicating the signal generator generation in light supply apparatus shown in Fig. 7 The timing diagram of material and the relationship of the light beam projected from polarization spectroscope.
Fig. 9 is the block diagram for indicating the composition of electric control system of exposure device shown in Fig. 2.
Figure 10 is the origin signal and shown in Fig. 9 indicated from the origin sensor output in scanning element shown in fig. 5 The incident timing diagram for allowing signal that selection element drive control part is generated according to origin signal.
Figure 11 is the block diagram for indicating the composition of the signal generator in light supply apparatus shown in Fig. 2.
Figure 12 is the timing diagram for indicating the signal of each portion output of the signal generator shown in Figure 11.
Figure 13 A of Figure 13 is the figure being illustrated to the pattern described when not carrying out the modified situation of local multiplying power, Figure 13 The pattern described when being to the situation for carrying out local multiplying power amendment (diminution) according to timing diagram shown in Figure 12 of Figure 13 B illustrate Figure.
Figure 14 is the light beam switching for indicating the variation 1 being arranged instead of the selection optical element in the 1st implementation form The figure of the composition in portion.
Figure 15 is the variation 1 for indicating for the selection in light beam switching part shown in fig. 6 to be replaced into Figure 14 with optical element Situation when variation 2 light beam switching part composition figure.
Figure 16 is the detailed optics for indicating to be set into the light beam phase shifter of the light beam switching part of variation 2 shown in figure 15 The figure of configuration.
Figure 17 A of Figure 17 indicates the photoelectric cell of the prism-like used as the replacement selection optical element of variation 3, Figure 17 B of Figure 17 is the figure for indicating the example of Other Devices.
Figure 18 is the wavelength conversion section in the pulsed light generating unit for the light supply apparatus being shown in detail in the 2nd implementation form The figure of composition.
Figure 19 be indicate in the 2nd implementation form from light supply apparatus to the optical path of the light beam of initial selection optical element Figure.
Figure 20 is to indicate to use up the optical path for learning element to next section of selection optical element from selection in the 2nd implementation form And the figure of the composition of the driving circuit of selection optical element.
Figure 21 is the light in the cell side incidence mirror to selection of the selection in the 2nd implementation form after optical element The figure that the case where beam selection is shifted with light beam is illustrated.
Figure 22 is the figure being illustrated to the movement of the light beam from polygonal mirror to substrate in the 2nd implementation form.
Figure 23 is the figure for indicating the specific composition of the scanning element in the 3rd implementation form.
Figure 24 A of Figure 24 is to adjust light-beam position to by means of parallel flat set in scanning element shown in figure 23 The figure that situation is illustrated, and be the center line for indicating the plane of incidence being parallel to each other and outgoing plane of parallel flat relative to light beam (chief ray) in the figure of 90 degree of state, Figure 24 B of Figure 24 is to parallel set by borrowing in scanning element shown in figure 23 Plate adjusts the figure being illustrated the case where light-beam position, and is the plane of incidence being parallel to each other and outgoing plane for indicating parallel flat Center line (chief ray) relative to light beam is from the figures of 90 degree of inclined states.
Figure 25 is the square for indicating the schematic configuration of control device of the control pattern drawing apparatus in the 4th implementation form Figure.
Figure 26 is a part of light that schematically amplification indicates the optical path in scanning element (delineation unit) shown in Figure 23 The figure of the state of light beam in road.
Figure 27 is the optical system configurations indicated from the polygonal mirror of scanning element shown in Figure 23 (delineation unit) to substrate Figure.
Specific embodiment
For the pattern plotter device and pattern plotter method of aspect of the invention, preferable implementation form is disclosed on one side simultaneously Referring to attached drawing, on one side in being hereafter described in detail.Furthermore aspect of the invention is not limited to the grade implementation forms, also wraps The numerous variations containing application or improvement gained person.That is, constituent element documented by following includes to have in technical field that the present invention belongs to Usual skill can the person of being easy to imagine that, substantially the same person, below documented by constituent element can suitably be combined.Also, Various omissions, displacement or the change of constituent element can be carried out in the range of not departing from purport of the invention.
[the 1st implementation form]
Fig. 1 is to indicate the exposure device EX for implementing exposure-processed to substrate (irradiated body) P comprising the 1st implementation form The figure of the schematic configuration of device inspection apparatus 10.Furthermore in the following description, as long as not particularly pointing out in advance, set by Gravity direction is set as the orthogonal coordinate system of XYZ of Z-direction, and arrow as illustrated illustrates X-direction, Y-direction and Z-direction.
Device inspection apparatus 10 is the system implemented specific processing (exposure-processed etc.) to substrate P and manufacture electronic device (substrate board treatment).Device inspection apparatus 10 is the flexible display, membranaceous for for example constructing manufacture as electronic device The system of the manufacturing line of touch panel, the membranaceous colored filter of liquid crystal display panel, soft wiring or soft sensor etc. Make system.Hereinafter, being illustrated premised on flexible display as electronic device.As flexible display, have for example organic EL display, liquid crystal display etc..Device inspection apparatus 10 has the structure of following so-called roll-to-roll (Roll To Roll) mode It makes: sending out substrate P from the supply roll FR1 that flexible laminar substrate (sheet substrate) P is wound into a roll to tubular, to sending After substrate P out continuously implements various processing, various treated substrate Ps are batched using recycling reel FR2.Substrate P has The moving direction (conveyance direction) of substrate P becomes longitudinal direction (strip) and width direction becomes the band-like of short side direction (billet) Shape.In the 1st implementation form, indicate membranaceous substrate P at least through processing unit (the 1st processing unit) PR1, processing unit (the 2nd processing unit) PR2, exposure device (the 3rd processing unit) EX, processing unit (the 4th processing unit) PR3 and processing unit (the 5th processing unit) PR4 and batch to recycling reel FR2 example.
Furthermore in 1 implementation form of Yu Ben, X-direction is to automatically supply reel FR1 towards recycling volume in substrate P in horizontal plane The direction (conveyance direction) of cylinder FR2.Y-direction be in direction orthogonal with X-direction in horizontal plane, and be substrate P width direction (billet direction).Z-direction is the direction orthogonal with x-direction and y-direction (upper direction), parallel with the direction of gravity.
Substrate P is for example using resin film or the foil being made of metal or alloy such as stainless steels (sheet metal) etc..As The material of resin film, for example, also can be used comprising polyvinyl resin, acrylic resin, polyester resin, stretching ethyl vinyl copolymerization Resin, Corvic, celluosic resin, polyamide, polyimide resin, polycarbonate resin, polystyrene At least one or more person in resin and vinyl acetate resin.Also, the thickness or rigidity (young's modulus) of substrate P are as long as be logical When crossing the transport path of device inspection apparatus 10 model as folding line or irreversible gauffer caused by buckling is not generated in substrate P It encloses.It is (poly- with a thickness of 25 μm~200 μm or so of PET (polyethylene terephthalate) or PEN as the base material of substrate P Polyethylene naphthalate) etc. film be preferable sheet substrate typical case.
Substrate P is sometimes in utilization processing unit PR1, processing unit PR2, exposure device EX, processing unit PR3 and processing By heat in reason everywhere in device PR4 implementation, it is therefore advantageous to select the substrate P that thermal expansion is several unobvious big materials.Example It such as, can be several by mixing inorganic filler into resin film and inhibiting thermal expansion.Inorganic filler also can be such as titanium oxide, oxygen Change zinc, aluminium oxide or silica etc..Also, substrate P can be 100 μm of thickness or so of very thin glass for utilizing the manufactures such as float method Individual layers, also can be the laminate made of the above-mentioned resin film of the very thin glass gluing, foil etc..
And say, the pliability (flexibility) of substrate P is even if refer to that the power for applying self weight degree to substrate P also can It does not shear or not broken makes the curved property of the substrate P.Also, by the power of self weight degree and curved property be also contained in can It is flexible.Also, flexible degree is constructed according to the material of substrate P, size, thickness, film forming in the layer in substrate P, temperature or wet Environment etc. of degree etc. and change.Total, in the device inspection apparatus 10 that substrate P is correctly wound in this 1st implementation form Transport path on the situation of the component of conveyance direction conversion such as set various conveyings roller, rotating cylinder when, as long as Can not buckling and successfully transport substrate P with leaving folding line or not damaged (generate rupture or crackle), then can be described as flexible The range of property.
Processing unit PR1 be one side by automatically supply reel FR1 conveying substrate P towards processing unit PR2 with specific Speed transported along the conveyance direction (+X direction) along strip direction, one is coated the apparatus for coating of processing in face of substrate P. Processing unit PR1 selectively or is equably coated with photonasty functional liquid to the surface of substrate P.Surface is coated with the photonasty The substrate P of functional liquid is transported towards processing unit PR2.
Processing unit PR2 be one side by from the substrate P that processing unit PR1 is transported towards exposure device EX with specific Speed is transported along conveyance direction (+X direction), and one faces the withering drying device of substrate P.Processing unit PR2 be by Air blower from the dry air such as hot wind or dry air (warm wind) to the surface of substrate P, infrared light sources, ceramics from blowing add Hot device etc. removes the solvent or water that include in photonasty functional liquid, and keeps photonasty functional liquid dry.Whereby, in substrate P Surface selectively or is formed uniformly the film as photonasty functional layer (photoinduction layer).Furthermore it also can be by by dry film It is attached at the surface of substrate P and forms photonasty functional layer in the surface of substrate P.When the situation, instead of processing unit PR1 and Processing unit PR2 and the adhering device (processing unit) that dry film is attached to substrate P is set.
Herein, the typical person of the photonasty functional liquid (layer) is photoresist (liquid or dry film shape), as need not be shown Shadow processing material, have by ultraviolet light irradiate part close and distant fluidity modify photonasty silane coupling agent (SAM) or in by The photonasty reducing agent etc. of the part plating of ultraviolet light irradiation also former base exposure.In use photonasty silane coupling agent as photosensitive When the situation of sexual function liquid (layer), being modified using the pattern part after ultraviolet exposure from lyophobicity in substrate P is lyophily. Therefore, coating is selected (to contain the conductive nanometers grains such as silver or copper containing electric conductivity ink by the part for becoming lyophily The ink of son) or the liquid of semiconductor material etc., and can be formed and constitute the electrode of thin film transistor (TFT) (TFT) etc., semiconductor, become The pattern layer of the wiring of insulation or connection.When using situation of the photonasty reducing agent as photonasty functional liquid (layer), in The also former base exposure of the pattern part plating after ultraviolet exposure is utilized in substrate P.Therefore, substrate P is soaked immediately after exposure Stain set time in the plating liquid comprising palladium ion etc. forms the pattern layer of (precipitation) palladium whereby.Such plating is to add At the processing procedure of method (additive), in addition to this, can also be as the etching process of the processing procedure of subtractive process (subtractive) Premise.When the situation, the substrate P of conveying to exposure device EX also can be to be set as PET or PEN for base material and in its surface whole face Or the selectively metallic diaphragm of AM aluminum metallization (Al) or copper (Cu) etc., and then lamination photoresist layer gained person thereon.Yu Ben In 1st implementation form, use photonasty reducing agent as photonasty functional liquid (layer).
Exposure device EX be one side by from the substrate P that processing unit PR2 is transported towards processing unit PR3 with specific Speed is transported along conveyance direction (+X direction), and one is exposed the processing unit of processing in face of substrate P.Exposure device EX is to substrate Surface (surface of the photonasty functional layer, i.e. photosurface) irradiation of P and the pattern of electronic device are (for example, constitute electronic device TFT electrode or wiring etc. pattern) corresponding light pattern.Whereby, it is formed in photonasty functional layer corresponding with above-mentioned pattern Sub-image (modification portion).
In 1 implementation form of Yu Ben, exposure device EX is exposure device, the so-called grating for directly retouching mode without using mask The exposure device (pattern plotter device) of scanning mode.It will be in being hereafter described in detail, exposure device EX is on one side by substrate P It is transported towards +X direction (direction of subscan), makes the luminous point SP of light beam LB (pulsed light beam) of the pulse type of exposure in base on one side It is one-dimensionally scanned (main scanning) on the plane of illumination (photosurface) of plate P along specific scanning direction (Y-direction), and according to Pattern data (Plotting, pattern-information) rapidly carries out modulation (on/off) to the intensity of luminous point SP.It whereby, will be with The corresponding light pattern of the specific pattern of electronic device, circuit or wiring etc. describes the plane of illumination for being exposed to substrate P.That is, by The main scanning of the subscan of substrate P and luminous point SP makes luminous point SP in relatively carrying out two-dimensional scanning on the plane of illumination of substrate P, And specific pattern plotter is exposed to substrate P.Also, since substrate P is along conveyance direction (+X direction) conveying, so by exposure The region W that is exposed of electro-optical device EX exposing patterns is that multiple (the reference figures of specific interval setting are separated along the strip direction of substrate P 4).Since at this, to be exposed region W-shaped at electronic device, so being exposed region W is also nmosfet formation region.Furthermore electronics Device is constituted by multiple pattern layers (forming figuratum layer) overlaps, and therefore, can also be exposed by exposure device EX Pattern corresponding with each layer.
Processing unit PR3 be one side by from the substrate P that exposure device EX is transported towards processing unit PR4 with specific Speed is transported along conveyance direction (+X direction), and one carries out the wet type processing device of wet processed in face of substrate P.Yu Ben 1 is implemented In form, processing unit PR3 carries out a kind of plating as wet processed to substrate P.That is, substrate P is impregnated in storage It is stored in specific time in the plating liquid for the treatment of trough.Whereby, corresponding with sub-image in the surface of photonasty functional layer precipitation (formation) Pattern layer.That is, according to the difference of the irradiation part and non-irradiated part of the luminous point SP in the photonasty functional layer of substrate P, Yu Ji Certain material (such as palladium) is formed selectively on plate P, this becomes pattern layer.
Furthermore when using situation of the photonasty silane coupling agent as photonasty functional layer, by processing unit PR3 into Coating process or plating of the row as a kind of liquid (for example, liquid containing electric conductivity ink etc.) of wet processed. When being convenient for the situation, pattern layer corresponding with sub-image also is formed in the surface of photonasty functional layer.That is, according to the sense of substrate P The difference of the irradiation part and illuminated part of the luminous point SP of photosensitiveness functional layer, in being formed selectively certain material in substrate P (such as electric conductivity ink or palladium etc.), this becomes pattern layer.Also, when using situation of the photoresist as photonasty functional layer, A kind of development treatment as wet processed is carried out by processing unit PR3.When the situation, by the development treatment in Photonasty functional layer (photoresist) forms pattern corresponding with sub-image.
Processing unit PR4 is on one side by the substrate P transported from processing unit PR3 direction recycling reel FR2 with specific Speed along conveyance direction (+X direction) transport, one in face of substrate P carries out be cleaned and dried processing clearing and drying device.Place Reason device PR4 be to through implement wet processed substrate P cleaned using pure water, thereafter, below glass transition temperature into Until the dry moisture content until substrate P of row becomes particular value or less.
Furthermore when using situation of the photonasty silane coupling agent as photonasty functional layer, processing unit PR4 also can be The annealing drying device that substrate P is made annealing treatment and is dried.Annealing is to consolidate be coated with conduction Property ink in the nanoparticle that contains is mutual electrically combines, and the pulsed light of the high brightness for example from flash lamp is exposed to Substrate P.When using situation of the photoresist as photonasty functional layer, in processing unit PR4 and it can also recycle between reel FR2 Processing unit (wet type processing device) PR5 being etched is set and the substrate P through implementing etching process is carried out clear Wash processing unit (clearing and drying device) PR6 of drying process.Whereby, Yu Caiyong photoresist is as photonasty functional layer When situation, pattern layer is formed in substrate P by etching process is implemented.That is, according to the luminous point SP of the photonasty functional layer of substrate P Irradiation part and illuminated part difference, in being formed selectively certain material (such as aluminium (Al) or copper (Cu) in substrate P Deng), this becomes pattern layer.There is processing unit PR5, PR6 the substrate P for conveying substrate P direction is recycled reel FR2 At a given speed along the function of conveyance direction (+X direction) conveying.Multiple processing unit PR1~PR4 are (optionally also comprising place Manage device PR5, PR6) substrate P is configured to base board delivery device towards the function that +X direction transports.
In this way, the substrate P through implementing each processing is recycled by recycling reel FR2.By at least each of device inspection apparatus 10 Processing and in substrate P formed 1 pattern layer.As described above, electronic device is constituted by multiple pattern layers overlap, because This, in order to generate electronic device, it is necessary to by being managed at least 2 times everywhere in device inspection apparatus 10 as shown in Figure 1.Therefore, may be used By will batch the recycling reel FR2 of substrate P install as supply roll FR1 to another device inspection apparatus 10 and lamination figure Pattern layer.It repeats movement as described above and forms electronic device.Substrate P that treated becomes multiple electronic devices and separates specifically The interval state connected along the strip direction of substrate P.That is, substrate P becomes for obtaining multiple substrates.
It is (not shown) that recycling has the recycling reel FR2 for the substrate P for being formed with electronic device with attached state to be also mountable to Cutter device.Be equipped with recycling reel FR2 cutter device be by will treated substrate P using electronic device (as device Forming region is exposed region W) it is that unit is split (cutting), and forms multiple electronic devices as monolithic.Substrate P Size be the size of such as width direction (direction as billet) be 10cm~2m or so, length direction is (as strip Direction) size be 10m or more.Furthermore the size of substrate P is not limited to above-mentioned size.
Fig. 2 is the composition figure for the composition for indicating exposure device EX.Exposure device EX is accommodated in tempering room ECV.The temperature adjustment Room ECV be remain specific temperature, specific humidity by by inside, and inhibit the internal substrate P transported by temperature Caused change in shape, and it is set as the wet of the hygroscopicity of consideration substrate P or the electrification of electrostatic generated with conveying etc. Degree.Tempering room ECV, which is situated between, is set to the setting face E of manufacturing works every Anti-vibration unit SU1, SU2 being passively or actively.Anti-vibration unit SU1, SU2 reduce the vibration from setting face E.Setting face E can be the floor of factory itself, also can be in order to form level Face and be exclusively set to the setting pedestal (pedestal) in floor above.Exposure device EX at least has substrate transport mechanism 12,2 light supply apparatus (light source) LS (LSa, LSb) of identical composition, light beam switching part (including photoelectricity arrangement for deflecting) BDU, exposure Bare headed (scanning means) 14, control device 16, multiple aligming microscope AM1m, AM2m (furthermore m=1,2,3,4) and multiple volumes Code device ENja, ENjb (furthermore j=1,2,3,4).Each portion of 16 couples of exposure device EX of control device (control unit) controls. The control device 16 includes the record media etc. that computer and record have programming, real as the originally the 1st by computer execution programming The control device 16 for applying form functions.
Substrate transport mechanism 12 is a part of person for constituting the aforesaid substrate carrying device of device inspection apparatus 10, will be at The substrate P of device PR2 conveying is managed after transporting at a given speed in exposure device EX, is sent to processing at a given speed Device PR3.The transport path of the substrate P transported in exposure device EX is specified in by the substrate transport mechanism 12.Substrate transporter Structure 12 be the conveyance direction of self-reference substrate P upstream side (-X direction side) successively have marginal position controller EPC, driven roller R1, Tension adjustment roller RT1, rotating cylinder (cylinder roller) DR, tension adjustment roller RT2, driven roller R2 and driven roller R3.
Marginal position controller EPC to the width direction of the substrate P transported from processing unit PR2 (Y-direction and substrate P Billet direction) on position be adjusted.That is, marginal position controller EPC moves up substrate P in width direction as follows It moves and adjusts the position in the width direction of substrate P, that is, to be applied with the width of the substrate P of the state conveying of specific tension (model is allowed in ± ten several μm~tens of μm or so of range relative to target position control in the position of the end (edge) in direction It encloses).Marginal position controller EPC has substrate P to be applied with the roller and detection substrate P that the state of specific tension is set up Width direction end (edge) position edge sensor (not shown) (end test section).Marginal position controller EPC is the detection signal detected based on above-mentioned edge sensor, makes the above-mentioned roller of marginal position controller EPC in Y-direction It is mobile, and adjust the position in the width direction of substrate P.Driven roller (nip rolls) R1 is that one side is kept from marginal position controller The tow sides one side of the substrate P of EPC conveying rotates, and substrate P is transported towards rotating cylinder DR.Furthermore marginal position control Device EPC processed can also be wound to the strip direction of the substrate P of rotating cylinder DR relative to rotating cylinder DR central axis AXo always Location-appropriate adjustment in the width direction of orthogonal mode and substrate P, and to correct the inclination in the direction of advance of substrate P The mode of error, the rotary shaft of the above-mentioned roller of appropriate adjustment marginal position controller EPC and the depth of parallelism of Y-axis.
Rotating cylinder DR has the central axis for extending along Y-direction and extending along the direction that the direction with gravity intersects AXo and from central axis AXo be radii fixus cylindric outer peripheral surface.Rotating cylinder DR is according to the outer peripheral surface (circumference Face) so that a part of substrate P is bent to cylinder planar in strip direction and supports (holding), and centered on central axis AXo It is rotated and is transported substrate P towards +X direction.Rotating cylinder DR is to support to supply the light beam from photohead 14 in its outer peripheral surface Region (part) in the substrate P of LB (luminous point SP) projection.Rotating cylinder DR is (to form thoughts from the face for forming electronic device The side of smooth surface) it is that (contiguity keep) substrate P collateral is held in the face (back side) of opposite side.In the two sides of the Y-direction of rotating cylinder DR, It is provided with the stock Sft supported in such a way that rotating cylinder DR is around central axis AXo rotation using cricoid bearing.Stock Sft It is the rotary driving source (not shown) (such as motor or deceleration mechanism etc.) controlled by next free control device 16 is endowed Torque and rotated around central axis AXo with fixed rotation speed.Furthermore it for convenience, will put down comprising central axis AXo and with YZ The parallel plane in face is known as median plane Poc.
Driven roller (nip rolls) R2, R3 is that specific interval configuration is separated along the conveyance direction (+X direction) of substrate P, to exposure Substrate P after light assigns specific relaxation (clearance).Driven roller R2, R3 is to keep substrate P on one side in the same manner as driven roller R1 Tow sides one side rotates, and substrate P is transported towards processing unit PR3.Tension adjustment roller RT1, RT2 is applied towards -Z direction Power, to winding and be supported in the substrate P of rotating cylinder DR in applying specific tension on strip direction.Whereby, make to be hung on rotation The tension stability in the strip direction that the substrate P of tumbler cylinder DR assigns is in specific range.Control device 16 is by control Rotary driving source (such as motor or speed reducer etc.) (not shown) and make driven roller R1~R3 rotate.Furthermore driven roller R1~R3 Rotary shaft and the rotary shaft of tension adjustment roller RT1, RT2 be parallel with the central axis AXo of rotating cylinder DR.
Light supply apparatus LS (LSa, LSb) is generated and is projected light beam (pulsed light beam, pulsed light, laser) LB of pulse type.It should Light beam LB is the ultraviolet for having peak wavelength in 370nm wavelength band below, by the luminous frequency (oscillation frequency of light beam LB Rate, specific frequency) it is set as Fa.The light beam LB that light supply apparatus LS (LSa, LSb) is projected is incident to exposure via light beam switching part BDU Shaven head 14.Control of the light supply apparatus LS (LSa, LSb) according to control device 16, with the luminous simultaneously outgoing beam LB of luminous frequency Fa. The composition of light supply apparatus LS (LSa, LSb) will be in being hereafter described in detail, in the 1st implementation form, by generation infrared waves The semiconductor Laser device of the pulsed light in long region, fiber amplifier, the pulsed light conversion by enlarged infrared wavelength region Wavelength changing element (harmonic wave generating element) for the pulsed light of ultraviolet wavelength region etc. is constituted, and is set as using acquisition frequency of oscillation Fa be hundreds of MHz and the fluorescent lifetime of 1 pulsed light be picosecond or so high brightness ultraviolet light pulsed light fiber amplifier Device laser light source (harmonic laser light source).Furthermore in order to by the light beam LB from light supply apparatus LSa and from light supply apparatus LSb Light beam LB be distinguished, the light beam LB from light supply apparatus LSa is indicated with LBa sometimes, is indicated with LBb from light supply apparatus The light beam LB of LSb.
Light beam switching part BDU is that the light beam LB (LBa, LBb) from 2 light supply apparatus LS (LSa, LSb) is made to be incident to structure At photohead 14 multiple scanning element Un (furthermore n=1,2 ..., 6) in 2 scanning element Un, and to light beam LB The scanning element Un of (LBa, LBb) incidence is switched over.Specifically, light beam switching part BDU makes from light supply apparatus LSa Light beam LBa is incident to 1 scanning element Un in 3 scanning element U1~U3, enters the light beam LBb from light supply apparatus LSb 1 scanning element Un being incident upon in 3 scanning element U4~U6.Also, light beam switching part BDU is cut in scanning element U1~U3 The scanning element Un of light beam LBa incidence is changed, and switches the scanning element Un of light beam LBb incidence in scanning element U4~U6.
Light beam switching part BDU is scanning element (delineation unit) Un that the scanning for carrying out luminous point SP is incident to light beam LBn Mode, switch light beam LBa, LBb incidence scanning element Un.That is, light beam switching part BDU makes the light from light supply apparatus LSa Beam LBa is incident to 1 scanning element Un that the scanning of luminous point SP is carried out in scanning element U1~U3.Similarly, light beam switching part BDU makes the light beam LBb from light supply apparatus LSb be incident to 1 of scanning scanning for carrying out luminous point SP in scanning element U4~U6 Unit Un.It, will be in being hereafter described in detail about light beam switching part BDU.Furthermore it about scanning element U1~U3, carries out The scanning element Un of the scanning of luminous point SP is switched over according to U1 → U2 → U3 sequence, about scanning element U4~U6, is carried out The scanning element Un of the scanning of luminous point SP is switched over according to U4 → U5 → U6 sequence.Furthermore above light beam switching part BDU Or the composition of light supply apparatus LS (LSa, LSb) is disclosed in such as No. 2015/166910 specification of International Publication No., it will be in hereafter It is described in detail referring to Fig. 6, Fig. 7.
Photohead 14 becomes the exposure for being arranged with the so-called Multibeam of multiple scanning element Un (U1~U6) of identical composition Shaven head.Photohead 14 is to support by multiple scanning element Un (U1~U6) using the outer peripheral surface (periphery) of rotating cylinder DR Substrate P a part of depicting pattern.Since photohead 14 substrate P is repeated the pattern exposure of electronic device, so Region (electronic device forming region) W that is exposed of exposing patterns separates specific interval along the strip direction of substrate P and sets It is equipped with multiple (referring to Fig. 4).Multiple scanning element Un (U1~U6) are with the configuration of specific configuration relation.Multiple scanning element Un (U1~U6) is to be configured to 2 rows in a row in interlocking in the conveyance direction of substrate P across median plane Poc.Odd number scanning is single First U1, U3, U5 are arranged in the upstream side (-X direction side) relative to the conveyance direction that median plane Poc is substrate P, and along Y Direction separates specific interval and is configured to 1 row.Even number scanning element U2, U4, U6 are arranged in relative to median plane Poc For the downstream side (+X direction side) of the conveyance direction of substrate P, and specific interval is separated along the Y direction and is configured to 1 row.Surprise Several scanning element U1, U3, U5 and even number scanning element U2, U4, U6 in the face XZ when observing relative to Poc pairs of median plane Claim ground setting.
Each scanning element Un (U1~U6) be will from light supply apparatus LS (LSa, LSb) light beam LB in the quilt of substrate P The mode that luminous point SP is converged on shadow surface projects, and keeps luminous point SP one-dimensional by the polygonal mirror PM (referring to Fig. 5) of rotation Ground is scanned.By polygonal mirror (deflecting member) PM of each scanning element Un (U1~U6) such as this, make luminous point SP in substrate P It is one-dimensionally scanned on plane of illumination.By the scanning of luminous point SP, in being provided (on the plane of illumination of substrate P) in substrate P Describe be equivalent to 1 line pattern straight line description line (scan line) SLn (furthermore n=1,2 ..., 6).About the scanning list The composition of first Un, will be in being hereafter described in detail.
Scanning element U1 make luminous point SP along describe line SL1 scanning, similarly, scanning element U2~U6 make luminous point SP along Describe line SL2~SL6 scanning.The description line SLn (SL1~SL6) of multiple scanning element Un (U1~U6) as shown in Figure 3, Figure 4, It is set as engaging in not being separated from each other in Y-direction (width direction of substrate P, main scanning direction).Furthermore it sometimes will be via light Beam switching part BDU and the light beam LB from light supply apparatus LS (LSa, LSb) for being incident to scanning element Un is expressed as LBn.Moreover, Sometimes the light beam LBn for being incident to scanning element U1 is indicated with LB1, similarly, indicates to be incident to scanning element U2 with LB2~LB6 The light beam LBn of~U6.Description line SLn (SL1~SL6) indicates the light beam being scanned by scanning element Un (U1~U6) The scanning track of the luminous point SP of LBn (LB1~LB6).It also can be inclined towards specific direction for being incident to the light beam LBn of scanning element Un The light beam of rectilinearly polarized light (P-polarized light or S polarized light) after vibration in 1 implementation form of Yu Ben, is set as the light beam of P-polarized light.
As shown in figure 4, being exposed the whole of the width direction of region W with all coverings of multiple scanning element Un (U1~U6) Mode, so that each scanning element Un (U1~U6) is shared scanning area.Whereby, each scanning element Un (U1~U6) can be in substrate Each of the multiple regions (describing range) divided in the width direction of P depicting pattern.For example, if by 1 scanning element The sweep length length of line SLn (describe) of the Y-direction of Un is set as 20~60mm or so, then by by odd number scanning element 3 of U1, U3, U5 and 3 i.e. total 6 scanning element Un of even number scanning element U2, U4, U6 are configured along Y-direction, and The width expansion for the Y-direction that will describe is to 120~360mm or so.Each length for describing line SLn (SL1~SL6) (is described The length of range) it is set as identical in principle.That is, the luminous point SP of the light beam LBn along each scanning for describing line SL1~SL6 Scanning distance is set as identical in principle.Furthermore when being intended to expand the situation for the width for being exposed region W, it can describe by extending The length of line SLn itself increases the quantity of the scanning element Un configured along Y-direction and copes with.
Furthermore actual each description line SLn (SL1~SL6) is set as slightly shorter than luminous point SP in energy practical on plane of illumination The maximum length (maximum scan length) enough scanned.For example, if being initial value by the description multiplying power of main scanning direction (Y-direction) The sweep length for the description line SLn for being able to carry out pattern plotter when the situation of (no multiplying power amendment) is set as 30mm, then luminous point SP in Maximum scan length on plane of illumination is in description starting point (scanning starting point) side for describing line SLn and to describe end point (end of scan point) side is respectively provided with the surplus of 0.5mm or so and is set as 31mm or so.By so as set, can Yu Guangdian In the range of the maximum scan length 31mm of SP to the position of the description line SLn of 30mm in being micro-adjusted on main scanning direction or Person is micro-adjusted to multiplying power is described.The maximum scan length of luminous point SP is not limited to 31mm, mainly by scanning element Un The bore of the f θ lens FT (referring to Fig. 5) being set to after polygonal mirror (polygonal rotating mirror) PM determine.
Multiple description line SLn (SL1~SL6) are across median plane Poc in staggered row on the circumferencial direction of rotating cylinder DR It is configured to 2 rows to column.Odd-numbered description line SL1, SL3, SL5 are located relative to the conveyance direction that median plane Poc is substrate P On the plane of illumination of the substrate P of upstream side (-X direction side).Even-numbered description line SL2, SL4, SL6 are located relative to median plane Poc is on the plane of illumination of the substrate P in the downstream side (+X direction side) of the conveyance direction of substrate P.Describe line SL1~SL6 be with The width direction of substrate P, i.e. the central axis AXo of rotating cylinder DR are substantially parallel.
Describe line SL1, SL3, SL5 be separate specific interval along the width direction (main scanning direction) of substrate P and in 1 row is configured on straight line.Description line SL2, SL4, SL6 also similarly, are separated along the width direction (main scanning direction) of substrate P It is specifically spaced and is configured to 1 row in linear.At this point, describing line SL2 in being configured at description line in the width direction of substrate P Between SL1 and description line SL3.Similarly, describe line SL3 in be configured in the width direction of substrate P describe line SL2 and describe line Between SL4.Describe line SL4 in being configured at description line SL3 in the width direction of substrate P and describing between line SL5, describes line SL5 Describe between line SL4 and description line SL6 in being configured in the width direction of substrate P.In this way, multiple description line SLn (SL1~ It SL6 is configured mutually staggered on Y-direction (main scanning direction).
Along the luminous point SP of odd-numbered each light beam LB1, LB3, LB5 being scanned for describing line SL1, SL3, SL5 Main scanning direction become one-dimensional direction, and become the same direction.Describe each of line SL2, SL4, SL6 along even-numbered The main scanning direction of the luminous point SP of light beam LB2, LB4, LB6 for being scanned become one-dimensional direction, and become the same direction.Edge The main scanning direction of the luminous point SP of light beam LB1, LB3, LB5 that is scanned of the description line SL1, SL3, SL5 with along description The main scanning direction of the luminous point SP of light beam LB2, LB4, LB6 that line SL2, SL4, SL6 are scanned also can mutually opposite directions each other. In 1 implementation form of Yu Ben, along the master for the luminous point SP for describing light beam LB1, LB3, LB5 that line SL1, SL3, SL5 are scanned Scanning direction is -Y direction.Also, along the luminous point SP's for describing light beam LB2, LB4, LB6 that line SL2, SL4, SL6 are scanned Main scanning direction is +Y direction.Whereby, describe line SL1, SL3, SL5 descriptions starting point side end with description line SL2, SL4, The end of the description starting point side of SL6 is overlapped in adjacent in Y-direction or part.Also, describing the description of line SL3, SL5 terminates The end of point side and the end for describing the description end point side of line SL2, SL4 are overlapped in adjacent in Y-direction or part.So that When the mode that the end of description line SLn adjacent in Y-direction locally overlaps each other configures each situation for describing line SLn, for example, Preferably relative to it is each describe line SLn length, comprising describe starting point or describe end point inside in Y-direction with percentage Several ranges below overlap.Furthermore make to describe line SLn in engagement in Y-direction to be to instigate the end of description line SLn each other in the side Y Adjacent (contiguity) or part overlap upwards.
Furthermore the width (size of X-direction) for describing the sub-scanning direction of line SLn is and the size of luminous point SP (diameter) φ Corresponding thickness.For example, the width for describing line SLn also becomes 3 μm when the situation that size (size) φ of luminous point SP is 3 μm. Luminous point SP specifically length (for example, be set as the size φ of luminous point SP 1/2) can also be projected overlappingly along description line SLn. Also, in the situation for engaging description line SLn adjacent in the Y direction (for example, describing line SL1 and description line SL2) each other When, it can also specific length (for example, 1/2 of the size φ of luminous point SP) overlapping.
When the situation of 1 implementation form of Yu Ben, the light beam LB (LBa, LBb) from light supply apparatus LS (LSa, LSb) is arteries and veins It washes off, therefore, is projected to during main scanning and describes the luminous point SP on line SLn according to the oscillation frequency of light beam LB (LBa, LBb) Rate Fa (such as 400MHz) and become discrete.Therefore, it is necessary to the luminous point SP for making 1 pulsed light by light beam LB and projecting with by Next 1 pulsed light and the luminous point SP that projects on main scanning direction in overlapping.Its amount to overlap is the size according to luminous point SP The frequency of oscillation Fa of scanning speed (speed of the main scanning) Vs and light beam LB of φ, luminous point SP and set.Luminous point SP's is effective Size φ be when intensity distribution approximate with the Gaussian Profile situation of luminous point SP, with the 1/e2 of the peak strength of luminous point SP (or 1/2) it determines.In 1 implementation form of Yu Ben, with luminous point SP to be φ × 1/2 or so weight relative to effective size (size) φ Mode repeatedly sets the scan velocity V s and frequency of oscillation Fa of luminous point SP.Therefore, the projection along main scanning direction of luminous point SP Interval becomes φ/2.Therefore, more satisfactory is to set as follows, that is, in the sub-scanning direction (side orthogonal with line SLn is described To) on, in along 1 time of luminous point SP scanning for describing line SLn and next time, between scanning, substrate P is also with the effective of luminous point SP Size φ substantially 1/2 distance it is mobile.Also, can be by tune to the setting of the light exposure of the photonasty functional layer in substrate P The peak value of whole light beam LB (pulsed light) and realize, but in the feelings that can not improve light exposure to be increased under the situation of intensity of light beam LB When shape, by the reduction of the scan velocity V s of the main scanning direction of luminous point SP, the increase of the frequency of oscillation Fa of light beam LB or substrate Either one or two of reduction of conveying speed Vt of the sub-scanning direction of P etc., makes on the main scanning direction or sub-scanning direction of luminous point SP Overlapping amount increase.The scan velocity V s of the main scanning direction of luminous point SP is the revolution (rotation speed Vp) with polygonal mirror PM Proportionally accelerate.
Each scanning element Un (U1~U6) is down to the central axis less than each light beam LBn in XZ plane towards rotating cylinder DR The mode that AXo advances irradiates each light beam LBn towards substrate P.Whereby, advance from each scanning element Un (U1~U6) towards substrate P The optical path (beam center axis) of light beam LBn be in the normal parallel in XZ plane with the plane of illumination of substrate P.Also, each scanning Unit Un (U1~U6) is with the light beam LBn to description line SLn (SL1~SL6) irradiation in opposite in the face parallel with YZ plane In the vertical mode of the plane of illumination of substrate P, towards substrate P illumination beam LBn.That is, in the master of the luminous point SP on plane of illumination On scanning direction, the light beam LBn (LB1~LB6) for being projected to substrate P is scanned with the state of telecentricity.It herein, will be by by each Specifically describe each midpoint of line SLn (SL1~SL6) and the plane of illumination with substrate P as defined in scanning element Un (U1~U6) Vertical line (or also known as optical axis) is known as irradiating central axis L en (Le1~Le6).
Each irradiation central axis L en (Le1~Le6) such as this becomes in will describe line SL1~SL6 and central axis in XZ plane The line of AXo connection.Respective irradiation central axis L e1, Le3, Le5 of odd number scanning element U1, U3, U5 are in XZ plane As the same direction, respective irradiation central axis L e2, Le4, Le6 of even number scanning element U2, U4, U6 are in XZ plane It is interior to become the same direction.Also, irradiation central axis L e1, Le3, Le5 and irradiation central axis L e2, Le4, Le6 are in XZ plane Relative to median plane Poc, angle is set as the mode of ± θ 1 (referring to Fig. 2).
Multiple aligming microscope AM1m (AM11~AM14) shown in Fig. 2, AM2m (AM21~AM24) are to detect Fig. 4 Shown in be formed in multiple alignment mark MKm (MK1~MK4) persons of substrate P, be set along the Y direction that multiple (this 1st is implemented It is 4 in form).Multiple alignment mark MKm (MK1~MK4) are to make to be exposed region on the plane of illumination to substrate P The specific pattern that W describes relatively is directed at the reference mark of position (alignment) with substrate P.Multiple aligming microscope AM1m (AM11~AM14), AM2m (AM21~AM24) are in the substrate P that the outer peripheral surface (periphery) using rotating cylinder DR is supported Detect multiple alignment mark MKm (MK1~MK4).Multiple aligming microscope AM1m (AM11~AM14) are set to relatively based on next From the irradiated area in the substrate P of the luminous point SP of the light beam LBn (LB1~LB6) of photohead 14 (by description line SL1~SL6 packet The region enclosed) more by the upstream side (-X direction side) of the conveyance direction of substrate P.Also, multiple aligming microscope AM2m (AM21~ It AM24) is the illuminated area being set in the substrate P compared with the luminous point SP based on the light beam LBn (LB1~LB6) from photohead 14 Domain (region surrounded by description line SL1~SL6) is more by the downstream side (+X direction side) of the conveyance direction of substrate P.
Aligming microscope AM1m (AM11~AM14), AM2m (AM21~AM24) include light source, to substrate P projection pair Mutatis mutandis illumination light;Viewing optical system (including object lens), obtains the part comprising alignment mark MKm on the surface of substrate P The intensified image of region (viewing area) Vw1m (Vw11~Vw14), Vw2m (Vw21~Vw24);And the photographing elements such as CCD, CMOS, It during mobile in conveyance direction, is shot above-mentioned in substrate P using the corresponding high-speed shutter of conveying speed Vt with substrate P Intensified image.Each taken camera shooting of multiple aligming microscope AM1m (AM11~AM14), AM2m (AM21~AM24) is believed Number (image document) is sent to control device 16.The mark position test section 106 (referring to Fig. 9) of control device 16 be by into The image analysis of the row multiple image pickup signals sent, and detect the position of the alignment mark MKm (MK1~MK4) in substrate P (marker location information).It furthermore is that hardly there is sensitivity relative to the photonasty functional layer in substrate P to mutatis mutandis illumination light The light of wavelength region, such as 500~800nm of wavelength or so light.
Multiple alignment mark MK1~MK4, which are set to, to be respectively exposed around the W of region.Alignment mark MK1, MK4 are in being exposed The two sides of the width direction of the substrate P of light region W, along substrate P strip direction at regular intervals Dh be formed with it is multiple.It is right Fiducial mark note MK1 is formed in the -Y direction side of the width direction of substrate P, and alignment mark MK4 is formed in the+Y of the width direction of substrate P Direction side.Such alignment mark MK1, MK4 are to configure as follows, that is, in substrate P be not affected by biggish tension or not by In the state of being deformed to hot processing procedure, in co-located on the strip direction (X-direction) of substrate P.In turn, alignment mark MK2, MK3 be formed between alignment mark MK1 and alignment mark MK4 along the width direction (billet direction) of substrate P and by The +X direction side of exposure area W and the gutter of -X direction side.Alignment mark MK2, MK3, which are formed in, to be exposed region W and is exposed Between the W of light region.Alignment mark MK2 is formed in the -Y direction side of the width direction of substrate P, and alignment mark MK3 is formed in substrate P +Y direction side.
In turn, the Y of the alignment mark MK1 of the end of the -Y direction side of substrate P and the alignment mark MK2 of gutter are arranged in The interval in direction, the interval of the Y-direction of the alignment mark MK2 and alignment mark MK3 of gutter and the side+Y for being arranged in substrate P It is set as same distance to the interval of the Y-direction of the alignment mark MK3 of the alignment mark MK4 and gutter of the end of side.It should Equal alignment marks MKm (MK1~MK4) can be also formed together when forming the 1st layer pattern layer.For example, also can be in the 1st layer of exposure When pattern, the together pattern of exposure alignment mark is exposed around the W of region also in exposing patterns.Furthermore alignment mark MKm can also be formed in and be exposed in the W of region.For example, also can be in being exposed in the W of region along the profile for being exposed region W shape At.Also, can also will be formed in the pattern part or specific of the specific position in the pattern for the electronic device being exposed in the W of region The part of shape is used as alignment mark MKm.
Aligming microscope AM11, AM21 are as shown in figure 4, be to shoot the viewing area (detection zone) for being present in object lens The mode of alignment mark MK1 in Vw11, Vw21 configures.Similarly, aligming microscope AM12~AM14, AM22~AM24 be with The mode for shooting the alignment mark MK2~MK4 being present in viewing area Vw12~Vw14, the Vw22~Vw24 of object lens configures. Therefore, multiple aligming microscope AM11~AM14, AM21~AM24 correspond to the position of multiple alignment mark MK1~MK4, from The -Y direction side of substrate P is arranged according to the sequence of AM11~AM14, AM21~AM24 along the width direction of substrate P.Furthermore in In Fig. 3, the diagram of the viewing area Vw2m (Vw21~Vw24) of aligming microscope AM2m (AM21~AM24) is omitted.
Multiple aligming microscope AM1m (AM11~AM14) be in exposure position in X-direction (describe line SL1~SL6) with The mode that the distance of viewing area Vw1m (Vw11~Vw14) is short compared with the length for the X-direction for being exposed region W is arranged.Multiple alignments Microscope AM2m (AM21~AM24) also similarly, in exposure position in X-direction (describing line SL1~SL6) and viewing area The mode that the distance of Vw2m (Vw21~Vw24) is short compared with the length for the X-direction for being exposed region W is arranged.Furthermore in being set in Y-direction The quantity of aligming microscope AM1m, AM2m for setting can become according to the quantity of the alignment mark MKm formed in the width direction of substrate P More.Also, each viewing area Vw1m (Vw11~Vw14), Vw2m (Vw21~Vw24) substrate P plane of illumination on size be It is set according to the size of alignment mark MK1~MK4 or alignment precision (position measurement precision), is 100~500 μm of square or so Size.
As shown in figure 3, being provided with the circumferencial direction of the outer peripheral surface throughout rotating cylinder DR in the both ends of rotating cylinder DR Be integrally formed into cyclic annular and tool graduated scale portion SDa, SDb.SDa, SDb are in the periphery of rotating cylinder DR in the scale portion The circumferencial direction in face is carved with the diffraction grating of grid line concavely or convexly with fixed spacing (such as 20 μm), is configured to incremental Scale.SDa, SDb are integrally rotated around central axis AXo and rotating cylinder DR in the scale portion.As to scale portion SDa, SDb The scale read head being read out multiple encoder ENja, ENjb (furthermore j=1,2,3,4) be with scale portion SDa, The mode of SDb opposite direction is arranged (referring to Fig. 2, Fig. 3).Furthermore in Fig. 3, the diagram of encoder EN4a, EN4b are omitted.
Encoder ENja, ENjb are the rotary angle position persons for detecting rotating cylinder DR optically.It is rotated with being set to The scale portion SDa of the end of the -Y direction side of roller DR be provided with oppositely 4 encoder ENja (EN1a, EN2a, EN3a, EN4a).Similarly, with the scale portion SDb of the end for the +Y direction side for being set to rotating cylinder DR it is opposite be provided with 4 codings Device ENjb (EN1b, EN2b, EN3b, EN4b).
Encoder EN1a, EN1b are the upstream side (sides-X being set to relative to the conveyance direction that median plane Poc is substrate P To side), and be configured on setting rhumb line Lx1 (referring to Fig. 2, Fig. 3).Be arranged rhumb line Lx1 become in XZ plane will coding The light beam of the measurement of device EN1a, EN1b links in the launching position (reading position) on scale portion SDa, SDb with central axis AXo Line.Also, setting rhumb line Lx1 become in XZ plane by the viewing area of each aligming microscope AM1m (AM11~AM14) The line of Vw1m (Vw11~Vw14) and central axis AXo connection.That is, multiple aligming microscope AM1m (AM11~AM14) are also configured at It is arranged on rhumb line Lx1.
Encoder EN2a, EN2b are the upstream side (sides-X being set to relative to the conveyance direction that median plane Poc is substrate P To side), and it is set to the downstream side (+X direction side) that the conveyance direction of substrate P is more leaned on compared with encoder EN1a, EN1b.Encoder EN2a, EN2b are configured on setting rhumb line Lx2 (referring to Fig. 2, Fig. 3).Be arranged rhumb line Lx2 become in XZ plane will coding The light beam of the measurement of device EN2a, EN2b links in the launching position (reading position) on scale portion SDa, SDb with central axis AXo Line.Setting rhumb line Lx2 is overlapped with angle position in becoming in XZ plane with irradiation central axis L e1, Le3, Le5.
Encoder EN3a, EN3b are the downstream side (sides+X being set to relative to the conveyance direction that median plane Poc is substrate P To side), and be configured on setting rhumb line Lx3 (referring to Fig. 2, Fig. 3).Be arranged rhumb line Lx3 become in XZ plane will coding The light beam of the measurement of device EN3a, EN3b links in the launching position (reading position) on scale portion SDa, SDb with central axis AXo Line.Setting rhumb line Lx3 is overlapped with angle position in becoming in XZ plane with irradiation central axis L e2, Le4, Le6. Therefore, setting rhumb line Lx2 and setting rhumb line Lx3 be in XZ plane relative to median plane Poc and angle become ± θ 1 Mode set (referring to Fig. 2).
Encoder EN4a, EN4b be set to compared with encoder EN3a, EN3b more lean on substrate P conveyance direction downstream side (+ X-direction side), and be configured on setting rhumb line Lx4 (referring to Fig. 2).Be arranged rhumb line Lx4 become in XZ plane by encoder The light beam of the measurement of EN4a, EN4b links in the launching position (reading position) on scale portion SDa, SDb with central axis AXo Line.Also, setting rhumb line Lx4 become in XZ plane by the viewing area Vw2m of each aligming microscope AM2m (AM21~AM24) The line of (Vw21~Vw24) and central axis AXo connection.That is, multiple aligming microscope AM2m (AM21~AM24) are also configured at setting On rhumb line Lx4.The setting rhumb line Lx1 and setting rhumb line Lx4 be in XZ plane relative to median plane Poc angle Mode as ± θ 2 is set (referring to Fig. 2).
Each encoder ENja (EN1a~EN4a), ENjb (EN1b~EN4b) are directed towards scale portion SDa, SDb projection measurement Light beam, and Photoelectric Detection is carried out to its reflected beams (diffraction light), whereby, the detection signal as pulse signal is exported To control device 16.The rotation position test section 108 (referring to Fig. 9) of control device 16 is that (pulse is believed by signal is detected to it Number) counted and with the resolution of secondary micron measurement rotating cylinder DR rotary angle position and angle change.It also being capable of root The conveying speed Vt of substrate P is measured according to the angle change of rotating cylinder DR.Rotation position test section 108 is to from each coding Device ENja (EN1a~EN4a), ENjb (EN1b~EN4b) detection signal individually counted respectively.
Specifically, rotation position test section 108 has multiple counter circuit CNja (CN1a~CN4a), CNjb (CN1b~CN4b).Counter circuit CN1a counts the detection signal for carrying out self-encoding encoder EN1a, counter circuit CN1b The detection signal for carrying out self-encoding encoder EN1b is counted.Similarly, counter circuit CN2a~CN4a, CN2b~CN4b are to next Self-encoding encoder EN2a~EN4a, EN2b~EN4b detection signal counted.Each counter circuit CNja such as this (CN1a~ CN4a), CNjb (CN1b~CN4b) is formed in each encoder ENja (EN1a~EN4a), ENjb (EN1b~EN4b) detection When the origin shown in Fig. 3 of a part of the circumferencial direction of scale portion SDa, SDb marks (origin pattern) ZZ, will with detect original The corresponding count value of encoder ENja, ENjb of point label ZZ is reset to 0.
Either one or two of count value of the counter circuit CN1a, CN1b or its average value are used as on setting rhumb line Lx1 The rotary angle position of rotating cylinder DR, either one or two of count value of counter circuit CN2a, CN2b or average value are used as setting The rotary angle position of rotating cylinder DR on rhumb line Lx2.Similarly, times of the count value of counter circuit CN3a, CN3b One or rotary angle position of the average value as the rotating cylinder DR on setting rhumb line Lx3, counter circuit CN4a, CN4b Either one or two of count value or its average value be used as the rotary angle position of the rotating cylinder DR on setting rhumb line Lx4.Furthermore Except the situation for causing rotating cylinder DR prejudicially to rotate relative to central axis AXo because of foozle of rotating cylinder DR etc. with Outside, in principle, the count value of counter circuit CN1a, CN1b is identical.Similarly, the count value of counter circuit CN2a, CN2b Also identical, count value, the count value of counter circuit CN4a, CN4b of counter circuit CN3a, CN3b are also identical respectively.
As described above, aligming microscope AM1m (AM11~AM14) and encoder EN1a, EN1b are arranged in setting orientation On line Lx1, aligming microscope AM2m (AM21~AM24) and encoder EN4a, EN4b are arranged on setting rhumb line Lx4.Cause This, can be according to the mark position inspection for being based on multiple image pickup signals taken by multiple aligming microscope AM1m (AM11~AM14) Captured by the position detection and aligming microscope AM1m of the alignment mark MKm (MK1~MK4) that the image analysis in survey portion 106 carries out The information (count value based on encoder EN1a, EN1b) of the rotary angle position of the rotating cylinder DR of the moment arrived, and it is high-precision The position of substrate P on degree ground measurement setting rhumb line Lx1.It similarly, can be according to based on multiple aligming microscope AM2m (AM21 ~AM24) taken by multiple image pickup signals mark position test section 106 image analysis carry out alignment mark MKm The rotary angle position of the rotating cylinder DR of moment taken by the position detection and aligming microscope AM2m of (MK1~MK4) Information (count value based on encoder EN4a, EN4b), and accurately measure setting rhumb line Lx4 on substrate P position It sets.
Also, the detection letter for carrying out the count value of the detection signal of self-encoding encoder EN1a, EN1b, carrying out self-encoding encoder EN2a, EN2b Number count value, come self-encoding encoder EN3a, EN3b detection signal count value and carry out the detection of self-encoding encoder EN4a, EN4b The count value of signal is to detect that the moment of origin label ZZ is reset to zero in each encoder ENja, ENjb.Therefore, in will be based on The setting orientation of the substrate P for being wound in rotating cylinder DR when the count value of encoder EN1a, EN1b are the 1st value (such as 100) When position on line Lx1 is set as the situation of the 1st position, transport in the 1st position in substrate P to the position on setting rhumb line Lx2 When setting (position for describing line SL1, SL3, SL5), the count value based on encoder EN2a, EN2b becomes the 1st value (such as 100). Similarly, it transports in the 1st position in substrate P to the position (position for describing line SL2, SL4, SL6) on setting rhumb line Lx3 When, the count value of the detection signal based on encoder EN3a, EN3b becomes the 1st value (such as 100).Similarly, in substrate P 1st position transport to setting rhumb line Lx4 on position when, based on encoder EN4a, EN4b detection signal count value at For the 1st value (such as 100).
And say, substrate P is wound in scale portion SDa, the SDb at the both ends compared with rotating cylinder DR more in the inner part.It, will in Fig. 2 The radius from central axis AXo of the outer peripheral surface of scale portion SDa, SDb be set as the outer peripheral surface compared with rotating cylinder DR from center The radius that axis AXo rises is small.However, also can be as shown in figure 3, being set as and being wound in rotation for the outer peripheral surface of scale portion SDa, SDb The outer peripheral surface of the substrate P of roller DR becomes the same face.That is, also can be with the outer peripheral surface of scale portion SDa, SDb from central axis AXo Radius (distance) be wound in rotating cylinder DR substrate P outer peripheral surface (plane of illumination) the radius from central axis AXo (distance) identical mode is set.Whereby, each encoder ENja (EN1a~EN4a), ENjb (EN1b~EN4b) can in winding In detection scale portion SDa, SDb on the identical radial position of plane of illumination of the substrate P of rotating cylinder DR.Therefore, can make because The measurement position of encoder ENja, ENjb and processing position (describe line SL1~SL6) in the radially different of rotating cylinder DR and The Abbe error of generation reduces.
But differ larger due to the substrate P as irradiated body with a thickness of ten several μm~hundreds of μm, so be difficult to Keep the radius of the outer peripheral surface of scale portion SDa, SDb identical always as the radius of the outer peripheral surface for the substrate P for being wound in rotating cylinder DR. Therefore, when the situation of scale portion SDa, SDb shown in Fig. 3, with the radius of its outer peripheral surface (scale face) with rotating cylinder DR's The consistent mode of the radius of outer peripheral surface is set.In turn, scale portion SDa, SDb also are constituted using a other disk, and by the circle Disk (scale disk) is coaxially mounted on the stock Sft of rotating cylinder DR.When the situation, also preferably in advance with Abbe error Controlling the degree in feasible value makes the radius and the half of the outer peripheral surface of rotating cylinder DR of outer peripheral surface (scale face) of scale disk Diameter is consistent.
According to the above, according to the alignment mark MKm detected by aligming microscope AM1m (AM11~AM14) Position in the substrate P of (MK1~MK4) and the count value based on encoder EN1a, EN1b be (counter circuit CN1a, CN1b's Either one or two of count value or average value), it is determined to be exposed region W on the strip direction (X-direction) of substrate P by control device 16 Description exposure starting position.Furthermore the length of the X-direction due to being exposed region W is previously known, so control device 16 Whenever detecting alignment mark MKm (MK1~MK4) of certain number, just it is determined as describing the starting position of exposure.Moreover, In will expose starting position it is determined that when the count value based on encoder EN1a, EN1b be set as the situation of the 1st value (such as 100) When, when the count value based on encoder EN2a, EN2b becomes the 1st value (such as 100), being exposed on the strip direction of substrate P The starting position of the description exposure of light region W, which is located at, to be described on line SL1, SL3, SL5.Therefore, scanning element U1, U3, U5 can root Start the scanning of luminous point SP according to the count value of encoder EN2a, EN2b.Also, in the count value based on encoder EN3a, EN3b at When for the 1st value (such as 100), the starting position of the description exposure for being exposed region W on the strip direction of substrate P, which is located at, to be described On line SL2, SL4, SL6.Therefore, scanning element U2, U4, U6 can start luminous point SP according to the count value of encoder EN3a, EN3b Scanning.
And say, it is usually specific in being assigned on strip direction to substrate P by tension adjustment roller RT1, RT2 in Fig. 2 Tension, and substrate P is close contact in rotating cylinder DR on one side, simultaneously transports with the rotation of rotating cylinder DR on one side.It is, however, possible to Because the rotation speed Vp of rotating cylinder DR is very fast or tension adjustment roller RT1, RT2 assigns substrate P tension become it is too low or Became the reasons such as high and caused to generate sliding of the substrate P relative to rotating cylinder DR.It is rolled in not generating substrate P relative to rotation When the state of the sliding of cylinder DR, becomes in the count value based on encoder EN4a, 4b and take and be aligned with aligming microscope AM1m Mark the count value (such as 150) based on encoder EN1a, EN1b of the moment of MKmA (certain specific alignment mark MKm) identical Value situation when, detect alignment mark MKmA by aligming microscope AM2m.
However, when generating situation of the substrate P relative to the sliding of rotating cylinder DR, even if based on encoder EN4a, The count value of EN4b is as the moment for taking alignment mark MKmA with aligming microscope AM1m based on encoder EN1a, EN1b The identical value of count value (such as 150), also examined by aligming microscope AM2m and do not measure alignment mark MKmA.In the situation When, the count value based on encoder EN4a, EN4b for example more than 150 after, detect by aligming microscope AM2m to fiducial mark Remember MKmA.Therefore, can be taken according to aligming microscope AM1m the moment of alignment mark MKmA based on encoder EN1a, EN1b Count value and aligming microscope AM2m take alignment mark MKmA moment encoder EN4a, EN4b count value, ask Out relative to the slippage of substrate P.In this way, by additional setting aligming microscope AM2m and encoder EN4a, EN4b, and can Measure the slippage of substrate P.
Secondly, being illustrated referring to optics composition of the Fig. 5 to scanning element Un (U1~U6).Furthermore each scanning element Un Therefore (U1~U6) composition having the same is only illustrated scanning element (delineation unit) U1, about other scanning elements Un, the description thereof will be omitted.Also, in Fig. 5, the direction parallel with irradiation central axis L en (Le1) is set as the direction Zt, will be located at In the orthogonal plane in the direction Zt and substrate P is set as from processing unit PR2 by the direction of exposure device EX towards processing unit PR3 The direction Xt will be located in the plane orthogonal with the direction the Zt and direction orthogonal with the direction Xt and be set as the direction Yt.That is, the Xt of Fig. 5, The three-dimensional coordinate of Yt, Zt are to become the three-dimensional coordinate of X, Y, Z of Fig. 2 and irradiation central axis centered on Y-axis with Z-direction Len (Le1) parallel mode rotates resulting three-dimensional coordinate.
As shown in figure 5, in scanning element U1, along from the incoming position of light beam LB1 to the light of plane of illumination (substrate P) The direction of advance of beam LB1 is provided with reflecting mirror M10, beam expander BE, reflecting mirror M11, polarization spectroscope BS1, reflecting mirror M12, moves Position optical component (parallel flat of translucency) SR, deflection adjustment optical component (prism) DP, field aperture FA, reflecting mirror M13, λ/ 4 wave plate QW, cylindrical lens CYa, reflecting mirror M14, polygonal mirror PM, f θ lens FT, reflecting mirror M15, cylindrical lens CYb.In turn, in In scanning element U1, be provided with detection scanning element U1 can start describe timing origin sensor (origin detector) OP1, And to the optical lens system G10 and light via reflected light of the polarization spectroscope BS1 detection from plane of illumination (substrate P) Detector DT.
The light beam LB1 for being incident to scanning element U1 is directed towards the advance of the direction-Zt, and is incident to and tilts relative to XtYt plane 45 ° of reflecting mirror M10.Become coaxial side with irradiation central axis L e1 to be incident to the axis of the light beam LB1 of scanning element U1 Formula is incident to reflecting mirror M10.Reflecting mirror M10 is played as the beam incident optical component for making light beam LB1 be incident to scanning element U1 Function makes incident light beam LB1 along the optical axis AXa set in parallel with Xt axis, towards the self-reflection mirror M10 court direction-Xt Isolated reflecting mirror M11 is reflected towards the direction-Xt.Therefore, optical axis AXa be in the face parallel with XtZt plane with irradiation central axis Le1 is orthogonal.Light beam LB1 after reflecting mirror M10 reflection is to penetrate to reflex to reflection along the beam expander BE that optical axis AXa is configured Mirror M11.Beam expander BE makes the enlarged-diameter of the light beam LB1 penetrated.Beam expander BE has collector lens Be1 and makes by optically focused The light beam LB1 dissipated after lens Be1 convergence is the collimation lens Be2 of directional light.
Reflecting mirror M11 is that 45 ° of ground configurations are tilted relative to YtZt plane, makes incident light beam LB1 (optical axis AXa) direction Polarization spectroscope BS1 is reflected towards the direction-Yt.The polarization spectroscope BS1 for separating and being arranged towards the direction-Yt relative to reflecting mirror M11 Polarization separation face be relative to YtZt plane tilt 45 ° ground configuration, be make P-polarized light light beam reflect and make towards and P polarization The light beam of rectilinearly polarized light (S polarized light) after the orthogonal direction polarization of light penetrates person.Due to being incident to the light of scanning element U1 Beam LB1 is the light beam of P-polarized light, so the light beam LB1 of polarization spectroscope BS1 self-reflection in future mirror M11 reflects simultaneously towards the direction-Xt It is guided towards the side reflecting mirror M12.
Reflecting mirror M12 is that 45 ° of ground configurations are tilted relative to XtYt plane, makes incident light beam LB1 towards self-reflection mirror M12 is reflected towards the reflecting mirror M13 towards the separation of the direction-Zt towards the direction-Zt.In reflecting mirror M12 reflection after light beam LB1 be along The optical axis AXc parallel with Zt axis passes through displacement optical component SR, deflection adjustment optical component DP and field aperture (field stop) FA And it is incident to reflecting mirror M13.Shifting optical component SR is in the plane orthogonal with the direction of advance (optical axis AXc) of light beam LB1 In (XtYt plane), the center in the section of light beam LB1 is two-dimensionally adjusted.Shifting optical component SR is by along optical axis 2 pieces of quartzy parallel flat Sr1, Sr2 of AXc configuration are constituted, and parallel flat Sr1 can be tilted around Xt axis, and parallel flat Sr2 can be around The inclination of Yt axis.It is tilted by parallel flat Sr1, Sr2 rotating around Xt axis, Yt axis, and in orthogonal with the direction of advance of light beam LB1 XtYt plane in, the position at the center of light beam LB1 is two-dimensionally shifted into small quantity.The parallel flat Sr1, Sr2 are in control Under the control of device 16, driven by actuator (not shown) (driving portion).Shift the parallel flat Sr2 in optical component SR Be as make to be projected to the luminous point SP of the light beam LB1 in substrate P in sub-scanning direction (X-direction in Fig. 4) with such as luminous point The light-beam position adjustment member the (the 1st of the mechanical optics of several times~ten several times range displacement of the size φ or pixel size of SP Adjustment member, the 1st adjustment optical component) it functions.
Deflection adjustment optical component DP is to the light beam LB1 phase after reflecting mirror M12 reflection through displacement optical component SR For the inclination person of being micro-adjusted of optical axis AXc.Deflection adjustment optical component DP is wedge-shaped by 2 configured along optical axis AXc Prism Dp1, Dp2 constitute, each of prism Dp1, Dp2 be arranged to independently to be rotated by 360 ° centered on optical axis AXc.By The rotary angle position of 2 prisms Dp1, Dp2 are adjusted, and proceeds to the axis and optical axis for reaching the light beam LB1 of reflecting mirror M13 The axis of levelling or to the plane of illumination for reaching substrate P the light beam LB1 of AXc is levelling with irradiation central axis L e1's.Furthermore by Deflecting light beam LB1 adjusted by 2 prisms Dp1, Dp2 has in the feelings of transverse shift in the face parallel with the section of light beam LB1 Shape, the transverse shift can revert to original state by displacement optical component SR above.The prism Dp1, Dp2 are in control device Under 16 control, driven by actuator (not shown) (driving portion).
In this way, being through field aperture FA by the light beam LB1 after displacement optical component SR and deflection adjustment optical component DP Circular open and to reaching reflecting mirror M13.The circular open of field aperture FA is by the light beam LB1 after beam expander BE expansion The diaphragm of peripheral portion (foundation) cut-off (masking) of intensity distribution in section.If the circular open of field aperture FA is set as The adjustable variable iris stop of bore then can adjust the intensity (brightness) of luminous point SP.
Reflecting mirror M13 is that 45 ° of ground configurations are tilted relative to XtYt plane, makes incident light beam LB1 towards reflecting mirror M14 It is reflected towards the direction+Xt.Light beam LB1 after reflecting mirror M13 reflection is incident to via the wave plate of λ/4 QW and cylindrical lens CYa Reflecting mirror M14.Reflecting mirror M14 is anti-towards polygonal mirror (polygonal rotating mirror, scanning deflecting member) PM by incident light beam LB1 It penetrates.Polygonal mirror PM is by incident light beam LB1 towards the f θ lens FT court+Xt direction side with the optical axis AXf parallel with Xt axis Reflection.Polygonal mirror PM is and to make incident light beam to scan the luminous point SP of light beam LB1 on the plane of illumination of substrate P LB1 is in one-dimensionally deflection (reflection) in the face parallel with XtYt plane.Extend specifically, polygonal mirror PM has along Zt axis direction Rotary shaft AXp and around rotary shaft AXp formed multiple reflecting surface RP (in this implementation form, the quantity Np of reflecting surface RP is set For 8).It can make to expose to reflecting surface by polygonal mirror PM is rotated centered on rotary shaft AXp towards specific direction of rotation The angle of reflection of the light beam LB1 of the pulse type of RP continuously changes.Whereby, the reflection direction of light beam LB1 is made by 1 reflecting surface RP Deflection, can make the luminous point SP of the light beam LB1 exposed on the plane of illumination of substrate P along main scanning direction (the width side of substrate P To, the direction Yt) it is scanned.
That is, the luminous point SP of light beam LB1 can be made to be scanned along main scanning direction by 1 reflecting surface RP.Therefore, by The 1 of polygonal mirror PM socialize then luminous point SP in scanned on the plane of illumination of substrate P description line SL1 quantity maximum become with it is anti- The quantity for penetrating face RP is 8 identical.Polygonal mirror PM is under the control of control device 16, by rotary driving source (such as motor Or deceleration mechanism etc.) RM and rotated with fixed speed.As described above as, describe line SL1 effective length (such as 30mm) being set as can be by maximum scan length (such as 31mm) length below that polygonal mirror PM is scanned luminous point SP Degree when initial setting (in design), describes central point (the irradiation central axis of line SL1 in the center setting of maximum scan length The point that Le1 passes through).
Cylindrical lens CYa is in non-scan direction (the Zt side orthogonal with the main scanning direction of polygonal mirror PM (direction of rotation) To) on, incident light beam LB1 is converged on the reflecting surface RP of polygonal mirror PM.That is, cylindrical lens CYa be by light beam LB1 in The strip (long ellipticity) extended along the direction parallel with XtYt plane is converged on reflecting surface RP.By bus and the direction Yt Parallel cylindrical lens CYa and following cylindrical lens CYb, even if there are reflecting surface RP relative to the inclined situation in the direction Zt (inclination of the reflecting surface RP relative to the normal of XtYt plane), also can inhibit its influence.Even if that is, each reflecting surface of polygonal mirror PM RP is slightly slanted from the state parallel with rotary shaft AXp, and the light beam LB1 that also can inhibit on the plane of illumination for exposing to substrate P (is retouched Line drawing SL1) irradiation position offset up in the side Xt.
F θ lens (scanning lens system) with the optical axis AXf extended along Xt axis direction FT is will be by polygonal mirror PM Light beam LB1 after reflection is in the telecentricity system for being projected to reflecting mirror M15 in XtYt plane as the mode parallel with optical axis AXf Scanning lens.The incidence angle θ of light beam LB1 towards f θ lens FT change according to the rotation angle (θ/2) of polygonal mirror PM.F θ lens FT It is the plane of illumination that light beam LB1 is projected to the substrate P proportional to its incidence angle θ via reflecting mirror M15 and cylindrical lens CYb On image height position.If focal length is set as fo, image height position is set as y, then f θ lens FT is the relationship to meet y=fo × θ The mode of (distortion aberration) designs.Therefore, by the f θ lens FT, can make light beam LB1 in the direction Yt (Y-direction) accurately etc. It is scanned fastly.When the incidence angle θ of light beam LB1 towards f θ lens FT are 0 degree, it is incident to the edge light beam LB1 of f θ lens FT Advance on optical axis AXf.
Reflecting mirror M15 is by the light beam LB1 from f θ lens FT towards substrate P court-Zt in a manner of through cylindrical lens CYb Direction reflection.By f θ lens FT and bus the cylindrical lens CYb parallel with the direction Yt, and be projected to the light beam LB1 of substrate P in The small luminous point SP of diameter number μm or so (such as 3 μm) is converged on the plane of illumination of substrate P.Also, being projected to the quilt of substrate P Luminous point SP on shadow surface carries out one-dimensional scanning according to the description line SL1 extended along the direction Yt by polygonal mirror PM.Furthermore f θ The optical axis AXf of lens FT and irradiation central axis L e1 are in the same plane, and the plane is parallel with XtZt plane.Therefore, in optical axis The light beam LB1 to advance on AXf is reflected by reflecting mirror M15 and towards the direction-Zt, is become coaxial with irradiation central axis L e1 and is projected To substrate P.In 1 implementation form of Yu Ben, at least f θ lens FT is projected to as the light beam LB1 after deflecting by polygonal mirror PM The projection optics system of the plane of illumination of substrate P functions.Also, at least reflecting member (reflecting mirror M11~M15) and polarization divides Light microscopic BS1 is functioned as the optical path-deflecting component for bending the optical path of self-reflection mirror M10 to the light beam LB1 of substrate P.It can The incident axis and irradiation central axis L e1 for the light beam LB1 for making to be incident to reflecting mirror M10 by the optical path-deflecting component are substantially together Axis.In in XtZt plane, by the light beam LB1 in scanning element U1 be after through the substantially optical path of U-shaped or U-shaped, Before towards the direction-Zt and then it is projected to substrate P.
By so as in the state that substrate P transport in X direction utilize each scanning element Un (U1~U6) make light beam LBn The luminous point SP of (LB1~LB6) is one-dimensionally scanned in main scanning direction (Y-direction), and luminous point SP can be made in the quilt of substrate P Two-dimensional scanning is relatively carried out on shadow surface.
Furthermore the effective length for describing line SLn (SL1~SL6) as an example, is set as 30mm, makes luminous point SP one side One side is overlapped along description line SLn (SL1 every time with 1/2, i.e. 1.5 μm of the luminous point SP of the effective size φ pulse type for being 3 μm ~SL6) when exposing to the situation on the plane of illumination of substrate P, luminous point SP is irradiated with 1.5 μm of interval.Therefore, it is swept by 1 time The umber of pulse of luminous point SP retouched and irradiated becomes 20000 (=30 (mm)/1.5 (μm)).Also, if being set as in sub-scanning direction glazing The scanning of point SP is also carried out with 1.5 μm of interval, then transmission speed (conveying speed) Vt (mm/ of the sub-scanning direction of substrate P Sec) it is in by (description starts) time point and next scanning sart point in time along 1 scanning for describing line SLn When time difference is set as Tpx (μ sec), become 1.5 (μm)/Tpx (μ sec).Time difference Tpx is the polygonal mirror PM of 8 reflecting surface RP Rotate the time of 1 face amount (45 degree=360 degree/8).When the situation, it is necessary to become 8 with the time of the rotation in 1 week of polygonal mirror PM The mode of × Tpx (μ sec) is set.
On the other hand, the light beam LB1 after the 1 reflecting surface RP reflection of polygonal mirror PM is effectively incident to f θ lens FT most Big incident angle (corresponding with the maximum scan length of luminous point SP) be according to the focal length of f θ lens FT and maximum scan length and It is incident to the thickness (numerical aperture: NA) of the main scanning direction of the light beam LB1 of the 1 reflecting surface RP of polygonal mirror PM and substantially determines. As an example, when the situation of the polygonal mirror PM of 8 reflecting surface RP, being equivalent in 45 degree of rotation angle of 1 reflecting surface RP facilitates The ratio (scan efficiency) of the rotation angle [alpha] of actual scanning is indicated with α/45 degree.In 1 implementation form of Yu Ben, due to that will have The rotation angle [alpha] for helping actual scanning is set as 15 degree, so scan efficiency becomes 1/3 (=15 degree/45 degree), f θ lens FT is most Big incidence angle becomes 30 degree (centered on optical axis AXf ± 15 degree).Therefore, the maximum scan for making luminous point SP to describe line SLn is long Degree (such as 31mm) is scanned required time Ts (μ sec) as Ts=Tpx × scan efficiency.Due to implementing shape for the originally the 1st The effective sweep length of description line SLn (SL1~SL6) in state is set as 30mm, so along the luminous point SP of description line SLn 1 time scanning sweep time Tsp (μ sec) become Tsp=Ts × 30 (mm)/31 (mm).Therefore, it is necessary in time Tsp's Period irradiates 20000 luminous point SP (pulsed light), therefore, the luminous frequency of the light beam LB from light supply apparatus LS (LSa, LSb) (frequency of oscillation) Fa becomes Fa ≒ 20000/Tsp (μ sec).
Origin sensor OP1 shown in fig. 5 be in the rotation position of the reflecting surface RP of polygonal mirror PM to reach based on reflection When the specific position that the scanning of the luminous point SP of face RP can start, origin signal SZ1 is generated.In other words, origin sensor OP1 be in Followed by the scanning of luminous point SP reflecting surface RP angle become specific angle position when generate origin signal SZ1.By There are 8 reflecting surface RP in polygonal mirror PM, so origin sensor OP1 is 8 output during polygonal mirror PM rotates 1 week Origin signal SZ1.Origin signal SZ1 caused by origin sensor OP1 is sent to control device 16.Origin sensor After OP1 generation origin signal SZ1 after delay time Td1, start the scanning along description line SL1 of luminous point SP.That is, should Origin signal SZ1, which becomes, indicates that the description of the luminous point SP based on scanning element U1 starts the information of timing (scanning starts timing).
Origin sensor OP1 includes light beam and send photosystem opa, projects the photonasty relative to substrate P to reflecting surface RP Functional layer is the laser beam Bga of the wavelength region of non-photosensitive;And light beam receiving system opb, it is anti-to be received in reflecting surface RP The reflected beams Bgb of laser beam Bga after penetrating simultaneously generates origin signal SZ1.Although not shown, but light beam send photosystem opa to have There are the light source for projecting laser beam Bga and the optical component that the laser beam Bga that light source issues is projected to reflecting surface RP (anti- Penetrate mirror or lens etc.).Although not shown, but light beam receiving system opb includes acceptance part, the received reflected light it includes receiving Beam Bgb and the photo-electric conversion element for being converted to electric signal;And optical component (reflecting mirror or lens etc.), it will be in reflecting surface RP The reflected beams Bgb after reflection is guided to above-mentioned acceptance part.It with light beam receiving system opb is to be set to that light beam, which send photosystem opa, Following position, that is, before the rotation position of polygonal mirror PM will start to the scanning for reaching the luminous point SP based on reflecting surface RP Specific position when, light beam receiving system opb can receive light beam and send the reflected light of laser beam Bga emitted by photosystem opa Beam Bgb.Furthermore the origin sensor OPn for being set to scanning element U2~U6 is indicated with OP2~OP6, benefit is indicated with SZ2~SZ6 The origin signal SZn generated with origin sensor OP2~OP6.Control device 16 be based on origin signal SZn (SZ1~ SZ6), which scanning element Un is managed followed by the scanning of luminous point SP.Also, indicating origin sometimes with Td2~Td6 To the sweeping along the luminous point SP for describing line SL2~SL6 made using scanning element U2~U6 progress after signal SZ2~SZ6 generation Retouch the delay time Tdn until starting.
Photodetector DT shown in fig. 5 has the photo-electric conversion element that photoelectric conversion is carried out to incident light.In rotation The surface of roller DR is formed with the reference pattern determined in advance.The part being formed on the rotating cylinder DR of the reference pattern is It is made of the material of the slightly lower reflectivity of the wavelength region relative to light beam LB1 (10~50%), the rotation of not formed reference pattern It is that 10% material below or light absorbing material are constituted that other parts on tumbler cylinder DR, which are by reflectivity,.Therefore, if Yu Wei It is wound with formation of the self-scanning unit U1 to rotating cylinder DR under the state (or the state for passing through the hyalomere of substrate P) of substrate P There is the luminous point SP of the area illumination light beam LB1 of reference pattern, then its reflected light is saturating by cylindrical lens CYb, reflecting mirror M15, f θ Mirror FT, polygonal mirror PM, reflecting mirror M14, the wave plate of cylindrical lens CYa, λ/4 QW, reflecting mirror M13, field aperture FA, deflection adjustment optics Component DP, it shifts optical component SR and reflecting mirror M12 and is incident to polarization spectroscope BS1.Herein, in polarization spectroscope BS1 with The wave plate of λ/4 QW is provided between substrate P, specifically between reflecting mirror M13 and cylindrical lens CYa.Whereby, substrate P is exposed to Light beam LB1 be the light beam LB1 for being converted to circularly polarized light from P-polarized light by the wave plate of the λ/4 QW, self-reference substrate P is incident to partially The reflected light of vibration spectroscope BS1 is to be converted to S polarized light from circularly polarized light by the wave plate of the λ/4 QW.Therefore, substrate P is come from Reflected light through polarization spectroscope BS1 and be incident to photodetector DT via optical lens system G10.
At this point, rotating rotating cylinder DR in the state that the light beam LB1 of pulse type is continuously incident to scanning element U1 And scanning element U1 is scanned luminous point SP, whereby, two-dimensionally irradiates luminous point SP in the outer peripheral surface of rotating cylinder DR.Therefore, Picture signal (the photoelectricity corresponding with reflected intensity for being formed in the reference pattern of rotating cylinder DR can be obtained by photodetector DT Signal).
Specifically, the Strength Changes to the photosignal exported from photodetector DT are used for light beam LB1 (light by response Point SP) pulsed illumination clock signal LTC (utilize light supply apparatus LS generate) carry out digital sampling and with the one-dimensional of the direction Yt Image document form obtain.In turn, the coding of the rotary angle position of the rotating cylinder DR on line SL1 is described in response measurement The measured value of device EN2a, EN2b, every sub-scanning direction fixed range (for example, 1/2 of the size φ of luminous point SP) by the side Yt To one-dimensional image document along the direction Xt arrange, whereby, the two-dimensional image information on the surface of rotating cylinder DR can be obtained.Control Device 16 processed is the two-dimensional image information of the reference pattern based on the acquired rotating cylinder DR, measurement scanning element U1's Describe the inclination of line SL1.The inclination of description line SL1 can opposite inclination between each scanning element Un (U1~U6), also may be used For the inclination (absolute tilt) of the central axis AXo relative to rotating cylinder DR.Furthermore it certainly, also can similarly measure each description The inclination of line SL2~SL6.Furthermore by using photodetector DT reference pattern obtained two-dimensional image information into Row parsing, except it is each describe line SL2~SL6 heeling error in addition to, can carry out it is each describe line SL2~SL6 description starting point or Describe confirmation, each confirmation of bonding error for describing line SL2~SL6 of the location error of end point etc., it can be achieved that each scanning is single The calibration of first Un (U1~U6).
Multiple scanning element Un (U1~U6) are can be around irradiation central axis with each of multiple scanning element Un (U1~U6) Len (Le1~Le6) rotates the mode of (rotation), is held in body frame (not shown).If each scanning element Un such as this (U1~ U6) around irradiation central axis L en (Le1~Le6) rotation, then respectively describe line SLn (SL1~SL6) also on the plane of illumination of substrate P Around irradiation central axis L en (Le1~Le6) rotation.Therefore, respectively describe line SLn (SL1~SL6) to tilt relative to Y-direction.Even if When situation of each scanning element Un (U1~U6) around irradiation central axis L en (Le1~Le6) rotation, pass through each scanning element Un It closes the opposite position of the optical component in light beam LBn (LB1~LB6) and each scanning element Un (U1~U6) in (U1~U6) It is also constant.Therefore, each scanning element Un (U1~U6) can make luminous point SP on the plane of illumination of substrate P along retouching after rotation Line drawing SLn (SL1~SL6) is scanned.Each scanning element Un (U1~U6) such as this around irradiation central axis L en (Le1~Le6) Rotation be to be carried out under the control of control device 16 by actuator (not shown).
Therefore, control device 16 be according to the inclination of each description line SLn measured, make scanning element Un (U1~U6) around Central axis L en (Le1~Le6) rotation is irradiated, whereby, multiple parastates for describing line SLn (SL1~SL6) can be kept.Also, In the position according to the alignment mark MKm for using aligming microscope AM1m, AM2m to detect, and substrate P or it is exposed region W production When the situation of raw strain (deformation), the necessity for making the pattern to be described also generate strain corresponding to this is generated.Therefore, control dress Set 16 be in be judged as substrate P or be exposed region W generate strain (deformation) situation when, make scanning element Un (U1~U6) around Central axis L en (Le1~Le6) rotation is irradiated, whereby, corresponding to substrate P or the strain (deformation) of region W is exposed and makes respectively to retouch Line drawing SLn is tilted relative to Y-direction pettiness.At this point, in this implementation form, as explained further on as, can be made along It is each describe pattern that line SLn describes according to specified multiplying power (such as ppm rank) it is flexible as control or make each description line SLn is individually in the control shifted to pettiness on sub-scanning direction (direction Xt in Fig. 5).
Furthermore even if the axis (center of rotation of irradiation central axis L en and scanning element the Un actual rotation of scanning element Un Axis) it is not quite identical, as long as in being coaxial both in specific permissible range.The specific permissible range is with such as lower section Formula setting, that is, make scanning element Un with angle, θ sm rotation when actual description line SLn description starting point (or describe terminate Point) with assume irradiation central axis L en and rotary middle spindle it is completely the same when make scanning element Un at a particular angle θ sm rotate when Design on description line SLn description starting point (or describe end point) difference component on the main scanning direction of luminous point SP at Within specific distance (such as size φ of luminous point SP).Even if also, being actually incident to the light of the light beam LBn of scanning element Un The rotary middle spindle of axis and scanning element Un is not quite identical, as long as in being coaxial in above-mentioned specific permissible range.
Fig. 6 is the composition figure of light beam switching part BDU.Light beam switching part BDU has multiple selection optical element AOMn (AOM1~AOM6), multiple collector lens CD1~CD6, multiple reflecting mirror M1~M14, multiple cell side incidence mirror IM1~IM6 (IMn), multiple collimation lens CL1~CL6 and absorber TR1, TR2.Selection is phase with optical element AOMn (AOM1~AOM6) There is permeability person for light beam LB (LBa, LBb), be the acousto-optic varying element (AOM:Acousto- driven with ultrasonic signals Optic Modulator).Equal optical components (selection the optical element AOM1~AOM6, collector lens CD1~CD6, reflection Mirror M1~M14, cell side incidence mirror IM1~IM6, collimation lens CL1~CL6 and absorber TR1, TR2) it is branch by plate Hold component IUB support.Support member IUB is in the top (+Z direction side) of multiple scanning element Un (U1~U6), from lower section (-Z direction side) supports the grade optical components.Therefore, support member IUB, which also has, will become the selection optical element of pyrotoxin The function of AOMn (AOM1~AOM6) and the spaced heat of multiple scanning element Un (U1~U6).
Light beam LBa from light supply apparatus LSa is so that its optical path is bent to meander-like by reflecting mirror M1~M6 and guide To absorber TR1.Also, the light beam LBb from light supply apparatus LSb is also similarly, it is bent its optical path by reflecting mirror M7~M14 Absorber TR2 is directed at meander-like.Hereinafter, with optical element AOMn (AOM1~AOM6) being off-state with selection The situation of (state for not applying ultrasonic signals) is described in detail.
Light beam LBa (such as diameter be 1mm collimated light beam below) from light supply apparatus LSa be with Y-axis in parallel towards+ Y-direction advances and is incident to reflecting mirror M1 by collector lens CD1.Light beam LBa after reflecting mirror M1 is reflected towards -X direction It is the 1st selection optical element AOM1 for being directed through the focal position (beam waist position) for being configured at collector lens CD1, by Collimation lens CL1 and become collimated light beam again, and to reaching reflecting mirror M2.Light beam after reflecting mirror M2 is reflected towards +Y direction LBa is in by reflecting in reflecting mirror M3 towards +X direction after collector lens CD2.
Light beam LBa after reflecting mirror M3 is reflected towards +X direction is to be directed through the focus position for being configured at collector lens CD2 The 2nd selection optical element AOM2 for setting (beam waist position), becomes collimated light beam by collimation lens CL2, and arrive again Reach reflecting mirror M4.Light beam LBa after reflecting mirror M4 is reflected towards +Y direction is after passing through collector lens CD3, in reflecting mirror M5 is reflected towards -X direction.It is directed through in reflecting mirror M5 towards the light beam LBa after -X direction reflection and is configured at collector lens CD3 3rd selection optical element AOM3 of focal position (beam waist position), becomes directional light by collimation lens CL3 again Beam, and to reaching reflecting mirror M6.Absorber TR1 is incident to towards the light beam LBa after +Y direction reflection in reflecting mirror M6.The absorber TR1 is the light collector in order to inhibit light beam LBa to leak to the outside and absorb light beam LBa.
Light beam LBb (such as diameter be 1mm collimated light beam below) from light supply apparatus LSb be with Y-axis in parallel towards+ Y-direction advances and is incident to reflecting mirror M13, in reflecting mirror M13 towards the light beam LBb after +X direction reflection in reflecting mirror M14 court+Y Direction reflection.Light beam LBb after reflecting mirror M14 is reflected towards +Y direction is after passing through collector lens CD4, in reflecting mirror M7 court +X direction reflection.Light beam LBb after reflecting mirror M7 is reflected towards +X direction is to be directed through the focus for being configured at collector lens CD4 4th selection optical element AOM4 of position (beam waist position), becomes collimated light beam by collimation lens CL4 again, and To reaching reflecting mirror M8.Light beam LBb after reflecting mirror M8 is reflected towards +Y direction is after passing through collector lens CD5, in reflection Mirror M9 is reflected towards -X direction.
Light beam LBb after reflecting mirror M9 is reflected towards -X direction is to be directed through the focus position for being configured at collector lens CD5 The 5th selection optical element AOM5 for setting (beam waist position), becomes collimated light beam by collimation lens CL5, and arrive again Reach reflecting mirror M10.Light beam LBb after reflecting mirror M10 is reflected towards +Y direction is after passing through collector lens CD6, in reflection Mirror M11 is reflected towards +X direction.Light beam LBb after reflecting mirror M11 is reflected towards +X direction is to be directed through to be configured at collector lens 6th selection optical element AOM6 of the focal position (beam waist position) of CD6, becomes flat again by collimation lens CL6 Row light beam, and to reaching reflecting mirror M12.Absorber TR2 is incident to towards the light beam LBb after -Y direction reflection in reflecting mirror M12.It should Absorber TR2 is the light collector in order to inhibit light beam LBb to leak to the outside and absorb light beam LBb.
As described above, selection is so that the light beam LBa from light supply apparatus LSa is successively saturating with optical element AOM1~AOM3 The mode crossed along light beam LBa direction of advance arranged in series.Also, selection is by optically focused with optical element AOM1~AOM3 Lens CD1~CD3 and collimation lens CL1~CL3 and form light beam LBa in each selection inside of optical element AOM1~AOM3 The mode of beam waist configure.Whereby, make the light beam for being incident to selection optical element (acousto-optic varying element) AOM1~AOM3 The diameter of LBa reduces and improves diffraction efficiency, and improves responsiveness.Similarly, selection is with optical element AOM4~AOM6 Along the direction of advance arranged in series of light beam LBb in a manner of penetrating the light beam LBb from light supply apparatus LSb successively.Also, choosing Selecting with optical element AOM4~AOM6 is to use by collector lens CD4~CD6 and collimation lens CL4~CL6 in each selection The mode that the inside of optical element AOM4~AOM6 forms the beam waist of light beam LBb configures.Whereby, make to be incident to selection optics The diameter of the light beam LBb of element (acousto-optic varying element) AOM4~AOM6 reduces and improves diffraction efficiency, and improves responsiveness.
With optical element AOMn (AOM1~AOM6) if being applied ultrasonic signals (high-frequency signal), generation makes for each selection Incident light beam (0 light) LB (LBa, LBb) is made with the resulting 1 diffraction light of diffraction angle diffraction corresponding with the frequency of high frequency For outgoing beam (light beam LBn).It, will be from multiple selection optical element AOMn (AOM1~AOM6) in 1 implementation form of Yu Ben Each light beam LBn projected in the form of 1 diffraction light be set as light beam LB1~LB6, each selection optical element AOMn (AOM1~AOM6) is as the function of playing the optical path-deflecting for making the light beam LB (LBa, LBb) from light supply apparatus LSa, LSb Person is handled.But actual acousto-optic varying element due to 1 diffraction light generation efficiency be 0 light 80% or so, therefore And with the light beam LBn (LB1~LB6) after each deflection of optical element AOMn (AOM1~AOM6) and originally using each selection Light beam LB (LBa, LBb) compares strength reduction.Also, in selecting with either one or two of optical element AOMn (AOM1~AOM6) to be connection When state, not 0 light remaining 20% or so of diffraction and straight ahead, but it is finally absorbed body TR1, TR2 absorption.
As shown in fig. 6, multiple selections with optical element AOMn (AOM1~AOM6) it is each be so that 1 time through deflecting around Light i.e. light beam LBn (LB1~LB6) is penetrated to be arranged relative to incident light beam LB (LBa, LBb) towards the mode that -Z direction deflects.It is free Selecting with the light beam LBn (LB1~LB6) projected after each deflection of optical element AOMn (AOM1~AOM6) is to be projected to be set to With the cell side incidence mirror IM1 of selection each position at a distance of specific range of optical element AOMn (AOM1~AOM6)~ Then IM6 is reflected towards -Z direction with becoming coaxial mode with irradiation central axis L e1~Le6.In cell side incidence mirror IM1~ Light beam LB1~LB6 after IM6 (hereinafter, being also referred to simply as mirror IM1~IM6) reflection is the opening by being formed in support member IUB Portion TH1~TH6's is each, is incident to each of scanning element Un (U1~U6) in a manner of along irradiation central axis L e1~Le6 It is a.
Furthermore selection is to generate refraction on through the specific direction in component by ultrasonic with optical element AOMn Therefore the diffraction grating of the periodic density variation of rate is rectilinearly polarized light (P-polarized light in incident beam LB (LBa, LBb) Or S polarized light) situation when, the period direction of polarization direction and diffraction grating is with the generation efficiency (diffraction of 1 diffraction light Efficiency) it is set as highest mode.Such as Fig. 6, each selection optical element AOMn so that incident light beam LB (LBa, LBs) towards -Z direction diffraction deflect mode be arranged situation when, due to the selection diffraction grating generated in optical element AOMn Period direction be also -Z direction, so by with it is matched in a manner of set (adjustment) from light supply apparatus LS (LSa, LSb) The polarization direction of light beam LB.
Also the persons same to each other such as composition, function, the effect of each selection optical element AOMn (AOM1~AOM6) can be used. Multiple selections are according to the driving signal (high-frequency signal) for carrying out self-control device 16 with optical element AOMn (AOM1~AOM6) On/off, and carry out/without making the generation of the incident resulting diffraction light of light beam LB (LBa, LBb) diffraction.For example, Select with optical element AOM1 be in be not applied to driving signal (high-frequency signal) come self-control device 16 and for off-state When, make the incident light beam LBa from light supply apparatus LSa not diffraction and penetrate.Therefore, through selection optical element AOM1 Light beam LBa afterwards is to be incident to reflecting mirror M2 through collimation lens CL1.On the other hand, selection with optical element AOM1 be in The driving signal (high-frequency signal) of self-control device 16 is applied to when being on-state, makes incident light beam LBa diffraction And towards mirror IM1.That is, selection optical element AOM1 is switched over according to the driving signal.Mirror IM1 selection is used by selection 1 diffraction light, that is, light beam LB1 after optical element AOM1 diffraction simultaneously makes it towards scanning element U1 lateral reflection.In the mirror of selection Light beam LB1 after IM1 reflection is to be incident to scanning list along irradiation central axis L e1 by the opening portion TH1 of support member IUB First U1.Therefore, mirror IM1 is to become coaxial mode with the optical axis of the light beam LB1 reflected and irradiation central axis L e1, makes to have entered The light beam LB1 reflection penetrated.Also, being directed through selection optical element when selecting with optical element AOM1 as on-state 0 light (20% or so intensity of incident beam) of the light beam LB of AOM1 is collimation lens CL1~CL3 after penetrating, poly- Optical lens CD2~CD3, reflecting mirror M2~M6 and selection optical element AOM2~AOM3 and to reaching absorber TR1.
Similarly, selection is (high come the driving signal of self-control device 16 in being not applied to optical element AOM2, AOM3 Frequency signal) and when being off-state, do not make incident light beam LBa (0 light) diffraction and makes it towards the side collimation lens CL2, CL3 (side reflecting mirror M4, M6) penetrates.On the other hand, selection is in being applied to self-control device 16 with optical element AOM2, AOM3 Driving signal and when being on-state, make 1 diffraction light i.e. light beam LB2, LB3 of incident light beam LBa towards mirror IM2, IM3.The mirror IM2, IM3 make by light beam LB2, LB3 after selection optical element AOM2, AOM3 diffraction towards scanning element U2, U3 lateral reflection.Light beam LB2, LB3 after mirror IM2, IM3 reflection are opening portion TH2, TH3 and photograph by support member IUB Hit mandrel Le2, Le3 become coaxially be incident to scanning element U2, U3.
In this way, control device 16 is believed by the driving for each application that will cope with selection optical element AOM1~AOM3 Number (high-frequency signal) is set as on/off (high/low), and is cut to selection with either one or two of optical element AOM1~AOM3 Change, to light beam LBa towards subsequent selection optical element AOM2, AOM3 or absorber TR1 still the light beam LB1 through deflecting~ 1 of LB3 switches over towards corresponding scanning element U1~U3.
Also, selection with optical element AOM4 be in being not applied to driving signal (high-frequency signal) come self-control device 16 and When for off-state, does not make the incident light beam LBb diffraction from light supply apparatus LSb and keep it (anti-towards the side collimation lens CL4 Penetrate the side mirror M8) it penetrates.On the other hand, selection with optical element AOM4 be in the driving signal for being applied to self-control device 16 and When for on-state, make the 1 diffraction light i.e. light beam LB4 of incident light beam LBb towards mirror IM4.Mirror IM4 makes by selection With the light beam LB4 after optical element AOM4 diffraction towards scanning element U4 lateral reflection.In mirror IM4 reflection after light beam LB4 be and photograph Hitting mandrel Le4 becomes the opening portion TH4 coaxially through support member IUB and is incident to scanning element U4.
Similarly, selection is (high come the driving signal of self-control device 16 in being not applied to optical element AOM5, AOM6 Frequency signal) and when being off-state, do not make incident light beam LBb diffraction and makes it towards the side collimation lens CL5, CL6 (reflecting mirror The side M10, M12) it penetrates.On the other hand, selection is in the driving for being applied to self-control device 16 with optical element AOM5, AOM6 Signal and when being on-state, make 1 diffraction light i.e. light beam LB5, LB6 of incident light beam LBb towards mirror IM5, IM6.It should Mirror IM5, IM6 make anti-towards scanning element U5, U6 side by light beam LB5, LB6 after selection optical element AOM5, AOM6 diffraction It penetrates.Light beam LB5, LB6 after mirror IM5, IM6 reflection are to become with irradiation central axis L e5, Le6 coaxially through support member Opening portion TH5, TH6 of IUB each and be incident to scanning element U5, U6.
In this way, control device 16 is believed by the driving for each application that will cope with selection optical element AOM4~AOM6 Number (high-frequency signal) is set as on/off (high/low), and is cut to selection with either one or two of optical element AOM4~AOM6 Change, to light beam LBb towards subsequent selection optical element AOM5, AOM6 or absorber TR2 still the light beam LB4 through deflecting~ 1 of LB6 switches over towards corresponding scanning element U4~U6.
As described above, light beam switching part BDU is by the direction of advance having along the light beam LBa from light supply apparatus LSa Multiple selections of arranged in series with optical element AOMn (AOM1~AOM3), the optical path of changeable light beam LBa and select light beam LBn 1 scanning element Un (U1~U3) of (LB1~LB3) incidence.Therefore, 1 time of the light beam LBa from light supply apparatus LSa can be made Diffraction light, that is, light beam LBn (LB1~LB3) is successively incident to each of 3 scanning element Un (U1~U3).For example, in light to be made When beam LB1 is incident to the situation of scanning element U1, control device 16 is only by multiple selections in optical element AOM1~AOM3 Selection is set to be in an ON state with optical element AOM1, when light beam LB3 to be made is incident to the situation of scanning element U3, only will Selection is set to be in an ON state with optical element AOM3.
Similarly, light beam switching part BDU is by the direction of advance string having along the light beam LBb from light supply apparatus LSb Join multiple selections of configuration with optical element AOMn (AOM4~AOM6), the optical path of changeable light beam LBb and select light beam LBn 1 scanning element Un (U4~U6) of (LB4~LB6) incidence.Therefore, 1 time of the light beam LBb from light supply apparatus LSb can be made Diffraction light, that is, light beam LBn (LB4~LB6) is successively incident to each of 3 scanning element Un (U4~U6).For example, in light to be made When beam LB4 is incident to the situation of scanning element U4, control device 16 is only by multiple selections in optical element AOM4~AOM6 Selection is set to be in an ON state with optical element AOM4, when light beam LB6 to be made is incident to the situation of scanning element U6, only will Selection is set to be in an ON state with optical element AOM6.
Multiple selections such as this correspond to multiple scanning element Un (U1~U6) with optical element AOMn (AOM1~AOM6) And be arranged, to whether making light beam LBn be incident to corresponding scanning element Un to switch over.Furthermore in 1 implementation form of Yu Ben, Selection is known as the 1st optical element module with optical element AOM1~AOM3, selection is known as with optical element AOM4~AOM6 2nd optical element module.Also, by single with the corresponding scanning of optical element AOM1~AOM3 with the selection of the 1st optical element module First U1~U3 is known as the 1st scan module, sweeps corresponding with selection optical element AOM4~AOM6 of the 2nd optical element module It retouches unit U4~U6 and is known as the 2nd scan module.Therefore, in any one scanning element Un and the 2nd scan module of the 1st scan module Any one scanning element Un, concurrently carry out luminous point SP scanning.
As described above, in this 1st implementation form, by the rotation for facilitating actual scanning of the polygonal mirror PM of scanning element Un Gyration α is set as 15 degree, and therefore, scan efficiency becomes 1/3.Thus, for example, being equivalent to 1 reflection in 1 scanning element Un rotation During the angle (45 degree) of face RP, the angle that can carry out the scanning of luminous point SP becomes 15 degree, in angular range in addition to this (30 degree) can not carry out the scanning of luminous point SP, and be incident to the light beam LBn waste of polygonal mirror PM therebetween.Therefore, it sweeps for Mr. Yu 1 Retouch the polygonal mirror PM of unit Un rotation angle become the angle for being helpless to actual scanning during, can be by entering light beam LBn It is incident upon other scanning elements Un in addition to this, and carries out the scanning of luminous point SP using the polygonal mirror PM of other scanning elements Un. Since the scan efficiency of polygonal mirror PM is 1/3, so can 1 scanning element Un of Mr. Yu be scanned luminous point SP after to carrying out down During before single pass, light beam LBn is distributed to 2 scanning element Un in addition to this and carries out the scanning of luminous point SP. Therefore, multiple scanning element Un (U1~U6) are divided into 2 groups (scan module) by this 1st implementation form, by 3 scanning element U1 ~U3 is set as the 1st scan module, and 3 scanning element U4~U6 are set as the 2nd scan module.
Whereby, for example, can make during the polygonal mirror PM of scanning element U1 rotates 45 degree (being equivalent to 1 reflecting surface RP) Light beam LBn (LB1~LB3) is successively incident to either one or two of 3 scanning element U1~U3.Therefore, scanning element U1~U3's is each A scanning for making the light beam LBa from light supply apparatus LSa not carry out luminous point SP successively lavishly.Similarly, in scanning element During the polygonal mirror PM of U4 rotates 45 degree (being equivalent to 1 reflecting surface RP), light beam LBn (LB4~LB6) can be made successively to be incident to 3 Either one or two of a scanning element U4~U6.Therefore, scanning element U4~U6 can make the light beam LBb from light supply apparatus LSb not unrestrained Take the scanning that ground successively carries out luminous point SP.Furthermore it is swept next time after the scanning that each scanning element Un starts luminous point SP to beginning During before retouching, polygonal mirror PM rotates the angle (45 degree) for being equivalent to 1 reflecting surface RP just.
In 1 implementation form of Yu Ben, 3 scanning element Un (U1~U3, U4~U6) of each scan module it is each be by The scanning of luminous point SP is carried out according to specific sequence, therefore, correspondingly, control device 16 is by the 3 of each optical element module A selection is switched to connection with optical element AOMn (AOM1~AOM3, AOM4~AOM6) in particular order, successively switches The scanning element Un (U1~U3, U4~U6) of light beam LBn (LB1~LB3, LB4~LB6) incidence.For example, in each scan module The sequence of the scanning of the progress luminous point SP of 3 scanning element U1~U3, U4~U6 becomes U1 → U2 → U3, U4 → U5 → U6 feelings When shape, control device 16 be by 3 selection optical element AOMn of each optical element module (AOM1~AOM3, AOM4~ AOM6 it) is switched to connection according to AOM1 → AOM2 → AOM3, AOM4 → AOM5 → AOM6 sequence, according to U1 → U2 → U3, U4 The scanning element Un of the sequence switching light beam LBn incidence of → U5 → U6.
Furthermore in order in polygonal mirror PM rotation be equivalent to the angle (45 degree) of 1 reflecting surface RP during, each scan module 3 scanning element Un (U1~U3, U4~U6) successively carry out the scanning of luminous point SP, and 3 scanning element Un of each scan module Each polygonal mirror PM of (U1~U3, U4~U6) must satisfy following condition and be rotated.The condition refers to 3 of each scan module Each polygonal mirror PM of scanning element Un (U1~U3, U4~U6) must be synchronized in a manner of becoming identical rotation speed Vp Control, and specific phase relation is become with the rotary angle position of each polygonal mirror PM (angle position of each reflecting surface RP) Mode synchronizes control.The rotation speed Vp of the polygonal mirror PM of 3 scanning element Un of each scan module is carried out in the same manner Rotation is known as synchronous rotary.
Fig. 7 is the figure for indicating the composition of light supply apparatus (light-pulse generator device, impulse laser unit) LSa (LSb).As light The light supply apparatus LSa (LSb) of fine laser aid has pulsed light generating unit 20 and control circuit 22.Pulsed light generating unit 20 has Dfb semiconductor laser diode 30,32, polarization spectroscope 34, the photoelectric cell (intensity modulation portion) as description light modulator 36, the driving circuit 36a of the photoelectric cell 36, polarization spectroscope 38, absorber 40, excitation light source 42, combiner 44, optical fiber light Amplifier 46, wavelength converting optical element 48,50 and multiple lens element GL.Control circuit 22, which has, generates clock signal LTC And the signal generator 22a of pixel shift pulse BSC.Furthermore in order to be exported from the signal generator 22a of light supply apparatus LSa Pixel shift pulse BSC and be distinguished from the pixel shift pulse BSC that the signal generator 22a of light supply apparatus LSb is exported, And the pixel shift pulse BSC from light supply apparatus LSa is indicated with BSCa sometimes, it is indicated with BSCb from light supply apparatus LSb's Pixel shift pulse BSC.
Dfb semiconductor laser diode (the 1st Solid State Laser element) 30 is the interception with the impulse wave of Q-switch (not shown) etc. Systematic collaboration, pretty sharp (high sharp) or sharp pulse type is generated using the frequency of oscillation Fa (such as 400MHz) as specific frequency Kind light (pulsed light beam, light beam) S1, dfb semiconductor laser diode (the 2nd Solid State Laser element) 32 is using as specific frequency Frequency of oscillation Fa (such as 400MHz) generate the kind light (pulsed light beam, light beam) of the slowly pulse type of (upper wide in range in the time) S2.The kind light S2 that the kind light S1 and dfb semiconductor laser diode 32 that dfb semiconductor laser diode 30 generates are generated is lighting timings It is synchronous.Kind light S1, S2 are that the energy of every 1 pulse is substantially the same, but polarized light state is different, and peak strength is kind of a light S1 It is relatively strong.This kind of light S1 and kind light S2 is the light of rectilinearly polarized light, and polarization direction is mutually orthogonal.It, will in 1 implementation form of Yu Ben The polarized light state for the kind light S1 that dfb semiconductor laser diode 30 generates is set as S polarized light, by dfb semiconductor laser diode 32 The polarized light state of the kind light S2 of generation is set as P-polarized light and is illustrated.This kind of light S1, S2 are the light of infrared wavelength region.
Control circuit 22 is to respond the clock pulse pulse sending kind from the signal generator 22a clock signal LTC sent The mode of light S1, S2 control dfb semiconductor laser diode 30,32.Whereby, when which is in response to Each clock pulse pulse (frequency of oscillation Fa) of arteries and veins signal LTC issues kind of light S1, a S2 with specific frequency (frequency of oscillation) Fa.The control Circuit 22 is controlled by control device 16.The period (=1/Fa) of the clock pulse pulse of clock signal LTC is known as benchmark week Phase Ta.Polarization spectroscope 34 is led to by kind light S1, S2 that dfb semiconductor laser diode 30,32 generates.
It furthermore should be as the pattern data to specify lattice-like as the clock signal LTC of benchmark clock signal The supply of the address of column direction in memory circuit to each counter unit pixel shift pulse BSC (BSCa, BSCb) benchmark Person, will be in being hereafter described in detail.Also, self-control device 16 inputs for carrying out being shone for substrate P signal generator 22a The modified entirety multiplying power update information TMg of the whole multiplying power of the description line SLn penetrated on face and for carry out describe line SLn office The modified part multiplying power update information CMgn (CMg1~CMg6) of portion's multiplying power.It whereby, can be to retouching on the plane of illumination with substrate P The length (pattern plotter length) of pattern that line drawing SLn describes is micro-adjusted, will be in being hereafter described in detail.The pattern is retouched Draw length flexible (micro-adjustment of sweep length) can in the maximum scan length (such as 31mm) for describing line SLn with for example ± The range of 1000ppm or so carries out.Furthermore if the whole multiplying power amendment in this 1st implementation form is simply illustrated, it is In the state of referring to that the quantity for the luminous point for including in 1 pixel (1 bit) on Plotting is kept fixed, swept without exception to along master The projection interval (that is, frequency of oscillation of luminous point) for retouching the luminous point SP of direction projection is micro-adjusted, and whereby, by describing, line SLn is whole The description multiplying power of the scanning direction of body is modified to the same.Also, if the local multiplying power amendment in this 1st implementation form simply carries out Illustrate, then refers to be located at each 1 pixel (1 bit) of the discrete multiple adjusting points set on 1 description line as object, make The interval of the main scanning direction of luminous point SP in the pixel of the adjusting point is from the interval of standard (such as the 1/ of the size φ of luminous point SP 2) slightly increase and decrease, whereby, it is slightly flexible on main scanning direction to make to be depicted in being less than greatly for the pixel at each adjusting point on substrate.
Polarization spectroscope 34 is to penetrate the light of S polarized light and make the light reflection person of P-polarized light, by dfb semiconductor laser The kind light S2 that the kind light S1 and dfb semiconductor laser diode 32 that element 30 generates are generated is directed to photoelectric cell 36.Specifically, Polarization spectroscope 34 is to penetrate by the kind light S1 for the S polarized light for generating dfb semiconductor laser diode 30 and lead kind of a light S1 Lead to photoelectric cell 36.Also, polarization spectroscope 34 is the kind light by the P-polarized light for generating dfb semiconductor laser diode 32 S2 reflects and kind of a light S2 is directed to photoelectric cell 36.Dfb semiconductor laser diode 30,32 and polarization spectroscope 34 constitute life At the light-pulse generator portion 35 of kind of light S1, S2.
Photoelectric cell (intensity modulation portion) 36 is that have permeability person relative to kind of light S1, S2, for example, using photoelectricity modulation Device (EOM:Electro-Optic Modulator).Photoelectric cell 36 is in response to describe the high/low of bit string data SBa (SBb) State switches the polarized light state person of kind of light S1, S2 by driving circuit 36a.Describing bit string data SBa is to be based on and scanning Each corresponding pattern data of pattern (bit pattern) that should be exposed of unit U1~U3 and generator, describe bit string data SBb be based on pattern data (bit pattern) corresponding with each pattern that should expose of scanning element U4~U6 and generator. Therefore, describe the driving circuit 36a that bit string data SBa is input to light supply apparatus LSa, describe bit string data SBb and be input to The driving circuit 36a of light supply apparatus LSb.From dfb semiconductor laser diode 30, dfb semiconductor laser diode 32 it is each Kind light S1, S2 are that wavelength region is longer for 800nm or more, therefore, as photoelectric cell 36, cutting for polarized light state can be used Changing responsiveness is GHz degree person.
Pattern data (Plotting) is arranged for each scanning element Un, is described to by each scanning element Un Pattern using being split according to the pixel of the size φ of the luminous point SP size Pxy set, patrolled with corresponding with above-mentioned pattern Collecting information (pixel information) indicates each person of multiple pixels.That is, the pattern data is by with will be along the main scanning of luminous point SP The direction in direction (Y-direction) is set as column direction and the direction of the secondary conveyance direction (X-direction) along substrate P is set as line direction Mode two-dimensionally decompose after multiple pixels logical message constitute dot chart data.The logical message of the pixel be " 0 " or " The data of 1 " 1 bit.The logical message of " 0 " refers to that the intensity for exposing to the luminous point SP of substrate P is set as low level is (non-to retouch Draw), the logical message of " 1 " refers to that the intensity for the luminous point SP that will be exposed in substrate P is set as high levels (description).Furthermore by picture The size of the main scanning direction (Y-direction) of the size Pxy of element is set as Py, and the size of sub-scanning direction (X-direction) is set as Px.
The logical message of the pixel of 1 row amount of pattern data is and 1 description line SLn (SL1~SL6) corresponding person.Therefore, The quantity of the pixel of 1 row amount can be determined according to the length of the size Pxy and description line SLn of the pixel on the plane of illumination of substrate P. The size Pxy of 1 pixel be set as be with the size φ of luminous point SP same degree or luminous point SP size φ or more, for example, When the situation that the effective size φ of luminous point SP is 3 μm, the size Pxy of 1 pixel is set as about 3 μm of square or more.According to 1 row The logical message of the pixel of amount carries out the intensity for describing the luminous point SP that line SLn (SL1~SL6) is projected to substrate P along 1 Modulation.The logical message of the pixel of the 1 row amount is known as serial data DLn.That is, pattern data is serial data DLn along row side To dot chart data made of arrangement.The serial data DLn of the pattern data of scanning element U1 is indicated with DL1, similarly, with DL2~DL6 indicates the serial data DLn of the pattern data of scanning element U2~U6.
Also, 3 scanning element U1~U3 (U4~U6) of scan module are to repeat gradually to carry out light in particular order The movement of the scanning of point SP, therefore, correspondingly, the pattern of 3 scanning element U1~U3 (U4~U6) of scan module provides Serial data DL1~DL3 (DL4~DL6) of material is also exported in particular order to the driving electricity of light supply apparatus LSa (LSb) Road 36a.Serial data DL1~the DL3 being sequentially output to the driving circuit 36a of light supply apparatus LSa is known as to describe bit string money Expect SBa, the serial data DL4~DL6 being sequentially output to the driving circuit 36a of light supply apparatus LSb is known as to describe bit string money Expect SBb.
For example, the sequence for carrying out the scanning element Un of the scanning of luminous point SP in the 1st scan module is U1 → U2 → U3 When situation, as follows, that is, firstly, the serial data DL1 of 1 row amount is exported to the driving circuit 36a of light supply apparatus LSa, Then, the serial data DL2 of 1 row amount is exported to the driving circuit 36a of light supply apparatus LSa, describes bit string data for constituting Serial data DL1~DL3 of the 1 row amount of SBa is electric according to the driving of DL1 → DL2 → DL3 Sequential output to light supply apparatus LSa Road 36a.Thereafter, serial data DL1~DL3 of next line is provided according to DL1 → DL2 → DL3 sequence as bit string is described Material SBa is exported to the driving circuit 36a of light supply apparatus LSa.Similarly, the scanning of luminous point SP is carried out in the 2nd scan module When the sequence of scanning element Un is U4 → U5 → U6 situation, as follows, that is, firstly, by the serial data DL4 of 1 row amount It exports to the driving circuit 36a of light supply apparatus LSb and then exports the serial data DL5 of 1 row amount to the drive of light supply apparatus LSb Dynamic circuit 36a will constitute the serial data DL4~DL6 for the 1 row amount for describing bit string data SBb according to DL4 → DL5 → DL6 Sequential output to light supply apparatus LSb driving circuit 36a.Thereafter, by serial data DL4~DL6 of next line according to DL4 → The sequence of DL5 → DL6 is exported as bit string data SBb is described to the driving circuit 36a of light supply apparatus LSb.About will describe Bit string data SBa (SBb) is exported to the specific composition of the driving circuit 36a of light supply apparatus LSa (LSb), will be in hereafter detailed Carefully it is illustrated.
In the description bit string data SBa (SBb) for being input to driving circuit 36a 1 amount of pixels logical message be it is low (" 0 ") when state, photoelectric cell 36 does not change kind of the polarized light state of light S1, S2 and is led directly to polarization spectroscope 38.It is another Aspect, in the logical message of 1 amount of pixels for the description bit string data SBa (SBb) for being input to driving circuit 36a be high (" 1 ") When state, photoelectric cell 36 changes the polarized light state of incident kind light S1, S2, that is, leads 90 degree of change of polarized direction Lead to polarization spectroscope 38.By so as driving circuit 36a be based on describe bit string data SBa (SBb) drive photoelectric cell 36, and photoelectric cell 36 is when describing the logical message of pixel of bit string data SBa (SBb) is high state (" 1 "), by S The kind light S1 of polarised light is converted to the kind light S1 of P-polarized light, and the kind light S2 of P-polarized light is converted to the kind light S2 of S polarized light.
Polarization spectroscope 38 is that the light of P-polarized light is made to penetrate and be directed to combiner 44 via lens element GL, keeps S inclined The light of vibration light reflects and is directed to absorber.The light (kind light) through the polarization spectroscope 38 is indicated with light beam Lse.The arteries and veins The frequency of oscillation for rushing the light beam Lse of shape becomes Fa.Excitation light source 42 generates exciting light, and the exciting light of the generation passes through optical fiber 42a And it is directed to combiner 44.Combiner 44 is the light beam Lse that will be irradiated from polarization spectroscope 38 and excitation photosynthesis, and is exported extremely Optical amplifier fiber 46.Optical amplifier fiber 46 is doped with the laser medium by excitation.Therefore, in for the light through synthesizing Beam Lse and excite optical transport optical amplifier fiber 46 in, laser medium be excited light excitation, whereby, by the light as kind of light Beam Lse amplification.As the laser medium adulterated in optical amplifier fiber 46, the terres rares such as erbium (Er), ytterbium (Yb), thulium (Tm) are used Element.The enlarged light beam Lse is to radiate from the ejecting end 46a of optical amplifier fiber 46 with the specific angle of divergence, by It is restrained by lens element GL or is collimated and be incident to wavelength converting optical element 48.
Wavelength converting optical element (the 1st wavelength converting optical element) 48 is to generate (Second by the 2nd harmonic wave Harmonic Generation:SHG) and by incident light beam Lse (wavelength X) be converted to wavelength is λ 1/2 it is the 2nd humorous Wave.As wavelength converting optical element 48, it is preferable that being used as quasi-phase matched (Quasi Phase Matching:QPM) PPLN (Periodically Poled LiNbO3) crystal of crystal.Furthermore PPLT (Periodically also can be used Poled LiTaO3) crystal etc..
Wavelength converting optical element (the 2nd wavelength converting optical element) 50 is to convert institute by wavelength converting optical element 48 The 2nd harmonic wave (wavelength X/2) be not wavelength-converted the conversion of optical element 48 and remaining kind of light (wavelength X) and frequency generation (Sum Frequency Generation:SFG), and generation wavelength is 1/3 the 3rd harmonic wave of λ.3rd harmonic wave become in 370mm wavelength band below (such as 355nm) has the ultraviolet (light beam LB) of peak wavelength.
As shown in figure 8, the logic of 1 amount of pixels in the description bit string data SBa (SBb) applied to driving circuit 36a When information is the situation of low (" 0 "), photoelectric cell (intensity modulation portion) 36 does not change the polarised light shape of incident kind light S1, S2 State and be led directly to polarization spectroscope 38.Therefore, become kind of a light S2 through the light beam Lse of polarization spectroscope 38.Therefore, from light The LBa (LBb) of the P-polarized light of source device LSa (LSb) final output has and the kind light from dfb semiconductor laser diode 32 The identical oscillation distribution (time response) of S2.That is, when the situation, light beam LBa (LBb) become pulse peak strength it is lower and In the characteristic of time upper wide in range passivation.Optical amplifier fiber 46 is the amplification effect of lower for such peak strength kind of light S2 Rate is lower, and therefore, the light beam LBa (LBb) projected from light supply apparatus LSa (LSb), which becomes, is not amplified to the required energy of exposure Light.Therefore, for the viewpoint exposed, essentially become identical as light supply apparatus LSa (LSb) non-outgoing beam LBa (LBb) Result.That is, exposing to the intensity of the luminous point SP of substrate P becomes low level.But during the exposure for not carrying out pattern (non-exposed period), the light beam LBa (LBb) derived from kind of the ultraviolet range of light S2 is although be small intensity but still lasting photograph It penetrates.Therefore, in the situation for the state for describing the same position that line SL1~SL6 maintenance for a long time is located in substrate P (for example, because removing The situation etc. sent the failure of system and substrate P is caused to stop) when, preferably in the light beam LBa (LBb) of light supply apparatus LSa (LSb) Injection window (illustration omitted) movable baffle is set and window will be projected and closed.
On the other hand, as shown in figure 8, in 1 pixel of the description bit string data SBa (SBb) applied to driving circuit 36a When the logical message of amount is the situation of high (" 1 "), photoelectric cell (intensity modulation portion) 36 changes the inclined of incident kind light S1, S2 Vibration light state is simultaneously directed to polarization spectroscope 38.Therefore, become kind of a light S1 through the light beam Lse of polarization spectroscope 38.Therefore, certainly The light beam LBa (LBb) that light supply apparatus LSa (LSb) is projected becomes derived from the kind light S1 from dfb semiconductor laser diode 30 and gives birth to Winner.Kind light S1 from dfb semiconductor laser diode 30 is since peak strength is stronger, so have by optical amplifier fiber 46 Efficient amplify, to have the exposure institute of substrate P from the light beam LBa (LBb) of the P-polarized light of light supply apparatus LSa (LSb) output The energy needed.That is, exposing to the intensity of the luminous point SP of substrate P becomes high levels.
In this way, in being provided with the photoelectric cell 36 as description light modulator in light supply apparatus LSa (LSb), therefore, by By controlling 1 photoelectric cell (intensity modulation portion) 36, and 3 scanning element U1~U3 (U4~U6) by scan module can be made The intensity for the luminous point SP being scanned is according to the pattern modulation that should describe.Therefore, the light beam projected from light supply apparatus LSa (LSb) LBa (LBb) becomes the description light beam through intensity modulation.
Furthermore in the composition of Fig. 7, also consider to omit dfb semiconductor laser diode 32 and polarization spectroscope 34, only in the future (describe bit string data SBa, SBb by based on pattern data from the kind light S1 of dfb semiconductor laser diode 30 or tandem provides Expect DLn) the switching of polarized light state of photoelectric cell 36 and it is wavy guide-lighting to optical amplifier fiber 46 in exploding.However, if Using this composition, then the incidence for planting light S1 towards optical amplifier fiber 46 periodically significantly becomes according to the pattern that should describe Disorderly.That is, if after the state that the kind light S1 from dfb semiconductor laser diode 30 is not incident to optical amplifier fiber 46 continues, Kind of light S1 is incident to optical amplifier fiber 46, then create the problem that it is just incident after kind light S1 with than it is usual when big amplification Rate amplification, generates the light beam (giant-pulse) with the biggish intensity of regulation or more from optical amplifier fiber 46 with rapid pulse momentum. Therefore, in 1 implementation form of Yu Ben, as preferable aspect, during Yu Zhongguang S1 is not incident to optical amplifier fiber 46, make Kind light S2 (the lower broad pulse light of peak strength) from dfb semiconductor laser diode 32 is incident to optical amplifier fiber 46, Whereby, it solves the problems, such as described above.
Also, switching over to photoelectric cell 36, but also (bit string data SBa, SBb or string can be described based on pattern data Column data DLn) driving dfb semiconductor laser diode 30,32.When the situation, the dfb semiconductor laser diode 30,32 conducts Description is functioned with light modulator (intensity modulation portion).That is, control circuit 22 be based on describe bit string data SBa (DL1~ DL3), SBb (DL4~DL6) controls dfb semiconductor laser diode 30,32, selectively (alternatively) is produced with specific frequency Fa Raw is in kind light S1, S2 of pulse shaped oscillation.When the situation, without polarization spectroscope 34,38, photoelectric cell 36 and absorber 40, it is directly incident from one of kind light S1, S2 of any one alternatively pulsed oscillation of dfb semiconductor laser diode 30,32 To combiner 44.At this point, control circuit 22 is with the kind light S1 from dfb semiconductor laser diode 30 and from dfb semiconductor The kind light S2 of laser diode 32 is not incident to the mode of optical amplifier fiber 46 simultaneously, control each dfb semiconductor laser diode 30, 32 driving.That is, when the luminous point SP of each light beam LBn is exposed to the situation of substrate P, optical fiber light is incident to only to plant light S1 and is put The mode of big device 46 controls dfb semiconductor laser diode 30.Also, (making in the luminous point SP of each light beam LBn not being exposed to substrate P The intensity of luminous point SP is extremely low) situation when, controlled in a manner of only planting light S2 and being incident to optical amplifier fiber 46 dfb semiconductor swash Optical element 32.So, if be the logical message (high/low) according to pixel to substrate P illumination beam LBn and determine.Also, the feelings The polarized light state of kind light S1, S2 when shape can be P-polarized light.
Herein, light supply apparatus LSa (LSb) is outgoing beam LBa (LBb) as follows, that is, the scanning of Yu Guangdian SP In, for 1 pixel of the size Pxy on the plane of illumination of substrate P, luminous point SP projects N number of (Yu Ben 1 along main scanning direction In implementation form, it is set as N=2).The light beam LBa (LBb) projected from light supply apparatus LSa (LSb) is in response to signal generator 22a generate clock signal LTC clock pulse pulse and generate.Therefore, luminous point SP is thrown for 1 pixel for size Pxy N number of (N also can be 2 or more integer) is penetrated, in the opposite scanning speed by the luminous point SP on main scanning direction relative to substrate P When being set as Vs, signal generator 22a must reference period Ta (=1/Fa) to be determined by Pxy/ (N × Vs) or Py/ (N × Vs) Generate the clock pulse pulse of clock signal LTC.For example, if the effective length for describing line SLn is set as 30mm, by 1 scanning Time Tsp is set as about 50 μ sec, then the scan velocity V s of luminous point SP becomes about 600m/sec.Moreover, in the size Pxy of pixel When (Px and Py) is the situation that 3 μm and N identical with the effective size of luminous point SP are 2, become Ta=3 μm of reference period/(2 × 600m/sec)=0.0025 μ sec, frequency Fa (=1/Ta) is as 400MHz.
Correction position information (setting value) Nv of the part multiplying power update information CMgn (CMg1~CMg6) can arbitrarily become It more, is suitably set according to the multiplying power for describing line SLn.For example, can also be located at the amendment pixel described on line SLn becomes 1 A mode sets correction position information Nv.By whole multiplying power update information TMg, it can also make description line SL flexible, but office Multiplying power amendment in portion's can carry out subtleer and small multiplying power amendment.For example, being 400MHz in frequency of oscillation Fa and describing line SLn's When the initial value of sweep length (describing range) is set as the situation of 30mm, make to describe line SLn by whole multiplying power update information TMg When sweep length is flexible or elongation 15 μm (ratio 500ppm), it is necessary to so that frequency of oscillation Fa is increased or reduced about 0.2MHz (ratio Rate 500ppm), and its adjustment is more difficult.Even if also there is fixed delay (time constant) and be switched to also, being able to carry out adjustment Therefore frequency of oscillation Fa adjusted can not obtain desired multiplying power therebetween.In turn, in the amendment ratio setting for describing multiplying power For 500ppm or less, for example count ppm~tens of ppm or so situation when, with the frequency of oscillation for changing light supply apparatus LSa (LSb) The whole multiplying power correcting mode of Fa is compared, and the local multiplying power correcting mode for increasing and decreasing the spot number in discrete amendment pixel can be simple Ground carries out the higher amendment of resolution.Certainly, and if with the two of whole multiplying power correcting mode and local multiplying power correcting mode, It obtains and can correspond to the advantages of biggish amendment for describing multiplying power is compared and realizes the amendment of high-res.
Fig. 9 is the block diagram electrically constituted for indicating exposure device EX.The control device 16 of exposure device EX has multi-panel Mirror drive control part 100, selection element drive control part 102, light beam manipulation device 104, mark position test section 106 and rotation Turn position detection part 108.Furthermore the original that the origin sensor OPn (OP1~OP6) of each scanning element Un (U1~U6) is exported Point signal SZn (SZ1~SZ6) is input to polygonal mirror drive control part 100 and selection element drive control part 102.Furthermore Yu Tu In example shown in 9, indicate the light beam LBa (LBb) from light supply apparatus LSa (LSb) by selection optical element AOM2 (AOM5) diffraction and its 1 diffraction light, that is, light beam LB2 (LB5) are incident to the state of scanning element U2 (U5).
The rotation of the polygonal mirror PM of each scanning element Un (U1~U6) of 100 drive control of polygonal mirror drive control part.Multi-panel With the rotary driving source for driving the polygonal mirror PM of each scanning element Un (U1~U6), (motor subtracts mirror drive control part 100 Fast machine etc.) RM, by the rotation of the drive control motor and the rotation of drive control polygonal mirror PM.Polygonal mirror drive control part 100 be to become spy with the rotary angle position of the polygonal mirror PM of 3 scanning element Un (U1~U3, U4~U6) of each scan module The mode of fixed phase relation, makes that the polygonal mirror PM's of 3 scanning element Un (U1~U3, U4~U6) of each scan module is each Synchronous rotary.That is, polygonal mirror drive control part 100 is the polygonal mirror for controlling multiple scanning element Un (U1~U6) as follows The rotation of PM, that is, the rotation speed of the polygonal mirror PM of 3 scanning element Un (U1~U3, U4~U6) of each scan module (turns Number) Vp is mutually the same, and the phase of rotary angle position is deviated every time with fixed angular amount.Furthermore each scanning element Un (U1 ~U6) polygonal mirror PM rotation speed Vp be all set to it is identical.
In 1 implementation form of Yu Ben, as described above, it will help the rotation angle [alpha] of the polygonal mirror PM of actual scanning is set as 15 degree, therefore, the scan efficiency for the octagonal polygonal mirror PM that reflecting surface RP is 8 becomes 1/3.In the 1st scan module, base It is carried out in the scanning of the luminous point SP of 3 scanning element Un according to U1 → U2 → U3 sequence.Therefore, in 3 scanning elements The phase of the rotary angle position of each polygonal mirror PM of U1~U3 is according to constant speed in the state of the sequence every time 15 degree of offset The mode of rotation synchronizes control by each polygonal mirror PM of the polygonal mirror drive control part 100 to scanning element U1~U3 System.Also, in the 2nd scan module, the scanning of the luminous point SP based on 3 scanning element Un according to U4 → U5 → U6 sequence into Row.Therefore, with sequentially every according to this in the phase of the rotary angle position of each polygonal mirror PM of 3 scanning element U4~U6 The mode of constant speed rotation in the state of secondary 15 degree of offset, by polygonal mirror drive control part 100 to each of scanning element U4~U6 A polygonal mirror PM synchronizes control.
Specifically, as shown in Figure 10, polygonal mirror drive control part 100 is for example for the 1st scan module, as follows Control scanning element U2 polygonal mirror PM rotatable phase, that is, since self-scanning unit U1 origin sensor OP1 origin letter On the basis of number SZ1, the origin signal SZ2 delay time Ts of the origin sensor OP2 from scanning element U2 and generate.Polygonal mirror Drive control part 100 is the rotatable phase for controlling the polygonal mirror PM of scanning element U3 as follows, that is, with origin signal SZ1 On the basis of, the origin signal SZ3 of the origin sensor OP3 from scanning element U3 postpones 2 × time Ts and generates.Time Ts It is the time (the maximum scan time of luminous point SP) that polygonal mirror PM rotates 15 degree.Whereby, become each of each scanning element U1~U3 The phase difference of the rotary angle position of a polygonal mirror PM deviates 15 degree of state according to the sequence of U1, U2, U3 every time.Therefore, 3 scanning element U1~U3 of the 1st scan module can carry out the scanning of luminous point SP according to U1 → U2 → U3 sequence.
About the 2nd scan module, also similarly, for example control scanning is single as follows for polygonal mirror drive control part 100 The rotatable phase of the polygonal mirror PM of first U5, that is, since self-scanning unit U4 origin sensor OP4 origin signal SZ4 be base Standard, the origin signal SZ5 delay time Ts of the origin sensor OP5 from scanning element U5 and generate.Polygonal mirror drive control Portion 100 controls the rotatable phase of the polygonal mirror PM of scanning element U6 as follows, that is, on the basis of origin signal SZ4, comes from The origin signal SZ6 of the origin sensor OP6 of scanning element U6 postpones 2 × time Ts and generates.Whereby, become each scanning element The phase of the rotary angle position of each polygonal mirror PM of U4~U6 deviates 15 degree of shape according to the sequence of U4, U5, U6 every time State.Therefore, 3 scanning element Un (U4~U6) of the 2nd scan module can carry out luminous point SP's according to U4 → U5 → U6 sequence Scanning.
Selection element drive control part (light beam switching drive control part) 102 is each optics for controlling light beam switching part BDU The selection of component module is with optical element AOMn (AOM1~AOM3, AOM4~AOM6), in 1 scanning element of each scan module Un starts after the scanning of luminous point SP to before start to scan next time, will come from the light beam LB of light supply apparatus LS (LSa, LSb) (LBa, LBb) is sequentially distributed to 3 scanning element Un (U1~U3, U4~U6) of each scan module.Furthermore it is single in 1 scanning First Un starts after the scanning of luminous point SP to before start to scan next time, and polygonal mirror PM rotates 45 degree, the time be partitioned into for when Between Tpx (=3 × Ts).
Specifically, selection element drive control part 102 is generated former when generating origin signal SZn (SZ1~SZ6) After point signal SZn, with the set time (turn-on time Ton) to the scanning element with generation origin signal SZn (SZ1~SZ6) Un (U1~U6) corresponding selection optical element AOMn (AOM1~AOM6) application driving signal (high-frequency signal) HFn (HF1~ HF6).Whereby, the selection optical element AOMn for being applied with driving signal (high-frequency signal) HFn is become with turn-on time Ton On-state can make light beam LBn be incident to corresponding scanning element Un.Also, due to making light beam LBn be incident to generation origin signal The scanning element Un of SZn, so light beam LBn can be made to be incident to the scanning element Un of the scanning for being able to carry out luminous point SP.Furthermore it should Turn-on time Ton is the time Ts time below.
Origin signal SZ1~the SZ3 generated in 3 scanning element U1~U3 of the 1st scan module is with time Ts interval It is generated according to SZ1 → SZ2 → SZ3 sequence.Therefore, to each selection of the 1st optical element module with optical element AOM1~ AOM3 applies driving signal (high frequency letter according to AOM1 → AOM2 → AOM3 sequence with time Ts interval with turn-on time Ton Number) HF1~HF3.Therefore, the 1st optical element module (AOM1~AOM3) can be with time Ts interval according to U1 → U2 → U3 Sequence switches 1 scanning element Un of light beam LBn (LB1~LB3) incidence from light supply apparatus LSa.Whereby, luminous point SP is carried out The scanning element Un of scanning switched over time Ts interval according to U1 → U2 → U3 sequence.Also, being opened in scanning element U1 Time (Tpx=3 × Ts) after the scanning of beginning luminous point SP to before start to scan next time, it can make from light supply apparatus LSa's Light beam LBn (LB1~LB3) is sequentially incident to either one or two of 3 scanning element Un (U1~U3).
Similarly, the origin signal SZ4~SZ6 generated in 3 scanning element U4~U6 of the 2nd scan module is with the time The interval Ts is generated according to SZ4 → SZ5 → SZ6 sequence.Therefore, to each selection optical element of the 2nd optical element module AOM4~AOM6 applies driving signal (height according to AOM4 → AOM5 → AOM6 sequence with time Ts interval with turn-on time Ton Frequency signal) HF4~HF6.Therefore, the 2nd optical element module (AOM4~AOM6) can with the time Ts interval according to U4 → U5 → 1 scanning element Un of light beam LBn (LB4~LB6) incidence of the sequence switching from light supply apparatus LSb of U6.Whereby, light is carried out The scanning element Un of the scanning of point SP is switched over time Ts interval according to U4 → U5 → U6 sequence.Also, in scanning element U4 starts the time (Tpx=3 × Ts) after the scanning of luminous point SP to before start to scan next time, can make to come from light supply apparatus The light beam LBn (LB4~LB6) of LSb is sequentially incident to either one or two of 3 scanning element Un (U4~U6).
If being illustrated in more details to selection element drive control part 102, selection element drive control part 102 be in When generating origin signal SZn (SZ1~SZ6), as shown in Figure 10, after generating origin signal SZn (SZ1~SZ6), when fixing Between (turn-on time Ton) generate multiple incident permissions signal LPn (LP1~LP6) for becoming H (height).Multiple incident permissions such as this Signal LPn (LP1~LP6) is to allow to make the corresponding letter selected with optical element AOMn (AOM1~AOM6) for on-state Number.That is, incident allow signal LPn (LP1~LP6) to be that light beam LBn (LB1~LB6) is allowed to be incident to corresponding scanning element Un The signal of (U1~U6).Moreover, selection element drive control part 102 is to allow signal LPn (LP1~LP6) to become H with incidence The turn-on time Ton of (height) applies driving signal with optical element AOMn (AOM1~AOM6) to corresponding selection, and (high frequency is believed Number) HFn (HF1~HF6), make corresponding selection optical element AOMn on-state (state for generating 1 diffraction light).Example Such as, selection element drive control part 102 is with the incident set time Ton for allowing signal LP1~LP3 to become H (height) to opposite The selection answered applies driving signal HF1~HF3 with optical element AOM1~AOM3.Whereby, the light beam from light supply apparatus LSa LB1~LB3 is incident to corresponding scanning element U1~U3.Also, selection element drive control part 102 is to allow signal with incidence The set time Ton that LP4~LP6 becomes H (height) applies driving signal to corresponding selection optical element AOM4~AOM6 (high-frequency signal) HF4~HF6.Whereby, light beam LB4~LB6 from light supply apparatus LSb be incident to corresponding scanning element U4~ U6。
As shown in Figure 10, corresponding incident fair with optical element AOM1~AOM3 with 3 selections of the 1st optical element module Perhaps signal LP1~LP3 is to become the rising timing of H (height) according to each shift time Ts of LP1 → LP2 → LP3 sequence, and become It does not overlap mutually at the turn-on time Ton of H (height).Therefore, the scanning element Un of light beam LBn (LB1~LB3) incidence is with the time The interval Ts switches according to U1 → U2 → U3 sequence.Similarly, with 3 selection optical elements of the 2nd optical element module The corresponding incident permission signal LP4~LP6 of AOM4~AOM6 is to become the rising timing of H (height) according to LP4 → LP5 → LP6 The each shift time Ts of sequence, and the turn-on time Ton for becoming H (height) does not overlap mutually.Therefore, light beam LBn (LB4~LB6) Incident scanning element Un is to be switched with time Ts interval according to U4 → U5 → U6 sequence.Selection element drive control part 102 Multiple incident permissions signal LPn (LP1~LP6) generated are exported to light beam manipulation device 104.
The light beam manipulation device (Beam Control portion) 104 of Fig. 9 be to the luminous frequency Fa of light beam LB (LBa, LBb, LBn), The multiplying power of description line SLn and the intensity modulation of light beam LB that the luminous point SP of light beam LB describes carry out controller.Light beam manipulation device 104 have whole multiplying power configuration part 110, local multiplying power configuration part 112, Plotting output section 114 and exposure control unit 116. Whole multiplying power configuration part (whole multiplying power update information memory portion) 110 is to remember whole times sent from exposure control unit 116 Rate update information TMg, and whole multiplying power update information TMg is exported to the control circuit 22 of light supply apparatus LS (LSa, LSb) Signal generator 22a.The clock pulse generating unit 60 of signal generator 22a generates corresponding with the entirety multiplying power update information TMg The clock signal LTC of frequency of oscillation Fa.Furthermore the detailed structure about whole multiplying power configuration part 110 and local multiplying power configuration part 112 At will be in being hereafter described in detail.
Local multiplying power configuration part (local multiplying power update information memory portion, update information memory portion) 112 is that memory exposes certainly Local multiplying power update information (update information) CMgn that control unit 116 is sent, and local multiplying power update information CMgn is defeated Out to the signal generator 22a of the control circuit 22 of light supply apparatus LS (LSa, LSb).Based on the part multiplying power update information CMgn specifies (specific) position for describing the amendment pixel on line SLn out, and determines its multiplying power.The signal of control circuit 22 produces Life portion 22a is according to the amendment pixel and its multiplying power determined based on part multiplying power update information CMg, and output pixel shifts arteries and veins Rush BSC (BSCa, BSCb).Furthermore each scanning list sent from exposure control unit 116 is remembered in local multiplying power configuration part 112 The local multiplying power update information CMgn (CMg1~CMg6) of first Un (U1~U6).Moreover, local multiplying power configuration part 112 will be with progress The corresponding part multiplying power update information CMgn of the scanning element Un of the scanning of luminous point SP is exported to light supply apparatus LS's (LSa, LSb) Signal generator 22a.That is, local multiplying power configuration part 112 is by the scanning element Un with generation origin signal SZn (SZ1~SZ6) Corresponding part multiplying power update information CMgn is exported to the light source for the generating source for becoming the light beam LBn for being incident to scanning element Un The signal generator 22a of device LSa (LSa, LSb).Furthermore based on entirety multiplying power update information TMg or local multiplying power amendment letter The amendment of the description multiplying power of breath CMgn is the signal generator 22a to the control circuit 22 from light supply apparatus LS (LSa, LSb) The clock cycle of clock signal LTC be locally micro-adjusted and carry out.About the detailed of control circuit 22 (signal generator 22a) It is thin to constitute, it will be in being hereafter described in detail.
For example, in generating the scanning element Un of origin signal SZn (that is, the scanning list of the scanning followed by luminous point SP First Un) when being the situation of either one or two of scanning element U1~U3, local multiplying power configuration part 112 will with generate origin signal SZn's The corresponding part multiplying power update information CMgn of scanning element Un is exported to the signal generator 22a of light supply apparatus LSa.Similarly, When the scanning element Un for generating origin signal SZn is the situation of either one or two of scanning element U4~U6, local multiplying power configuration part 112 export part multiplying power update information CMgn corresponding with the scanning element Un of origin signal SZn is generated to light supply apparatus LSb Signal generator 22a.Whereby, in each scan module carry out luminous point SP scanning scanning element Un (U1~U3, U4~ U6 the submitting timing switching part 64 of pixel shift pulse BSC (BSCa, BSCb) corresponding to) from light supply apparatus LS (LSa, LSb) Output.Whereby, sweep length can individually be adjusted to each description line SLn.
Plotting output section 114 is will to believe with generation origin in 3 scanning element Un (U1~U3) of the 1st scan module The serial data DLn of the corresponding 1 row amount of scanning element Un (followed by the scanning element Un of the scanning of luminous point SP) of number SZn It exports as bit string data SBa is described to the driving circuit 36a of light supply apparatus LSa.Also, Plotting output section 114 is By with 3 scanning element Un (U4~U6) of the 2nd scan module in generate origin signal SZn scanning element Un (next into The scanning element Un of the scanning of row luminous point SP) corresponding 1 row amount serial data DLn (DL4~DL6) as describing bit string money Expect SBb and exports to the driving circuit 36a of light supply apparatus LSb.About the 1st scan module, the scanning of the scanning of luminous point SP is carried out The sequence of unit U1~U3 becomes U1 → U2 → U3, and therefore, Plotting output section 114 will be suitable according to DL1 → DL2 → DL3 The duplicate serial data DL1~DL3 of sequence is exported as bit string data SBa is described.About the 2nd scan module, luminous point is carried out The sequence of scanning element U4~U6 of the scanning of SP becomes U4 → U5 → U6, and therefore, Plotting output section 114 will be according to DL4 Sequentially repeated serial data DL4~DL6 of → DL5 → DL6 is exported as bit string data SBb is described.
And say, exposure control unit 116 shown in Fig. 9 be to whole multiplying power configuration part 110, local multiplying power configuration part 112 and Plotting output section 114 carries out controller.The setting that 116 input marking position detection part 106 of exposure control unit is detected What the location information and rotation position test section 108 of the alignment mark MKm (MK1~MK4) in rhumb line Lx1, Lx4 detected Be arranged the rotating cylinder DR on rhumb line Lx1~Lx4 rotary angle position information (based on counter circuit CN1a~CN4a, The count value of CN1b~CN4b).Exposure control unit 116 is based on the alignment mark MKm (MK1~MK4) on setting rhumb line Lx1 Location information and setting rhumb line Lx1 on rotating cylinder DR rotary angle position (counter circuit CN1a, CN1b's Count value), detect the start bit of the description exposure for being exposed region W on the sub-scanning direction (X-direction) of (decision) substrate P It sets.
Moreover, exposure control unit 116 is based on the setting rhumb line Lx1 detected when describing the starting position of exposure On the rotary angle position of rotating cylinder DR and setting rhumb line Lx2 rotary angle position (based on counter circuit CN2a, The count value of CN2b), judge whether the starting position of the description exposure of substrate P has transported on setting rhumb line Lx2 Describe on line SL1, SL3, SL5.If exposure control unit 116 be judged as describe exposure starting position transported to describe line SL1, On SL3, SL5, then local multiplying power configuration part 112 and Plotting output section 114 etc. are controlled, scanning element U1, U3, U5 are started The description of scanning based on luminous point SP.
When the situation, exposure control unit 116 is the timing for carrying out describing exposure with scanning element U1, U3, makes part times Rate configuration part 112 is by local multiplying power update information CMg1, CMg3 corresponding with scanning element U1, U3 of scanning of luminous point SP is carried out It exports to the signal generator 22a of light supply apparatus LSa.Whereby, the signal generator 22a of light supply apparatus LSa is according to part times Rate update information CMg1, CMg3 and generating makes serial data DL1, DL3's for carrying out scanning element U1, U3 of the scanning of luminous point SP The pixel shift pulse BSCa of pixel shift.According to pixel shift pulse BSCa, Plotting output section 114 makes and carries out light One pixel of logical message, one pixel of each pixel of scanning element U1, U3 of the scanning of point SP corresponding serial data DL1, DL3 Ground displacement.Similarly, exposure control unit 116 is the timing for carrying out describing exposure with scanning element U5, makes local multiplying power configuration part 112 export part multiplying power update information CMg5 corresponding with scanning element U5 to the signal generator 22a of light supply apparatus LSb. Whereby, the signal generator 22a of light supply apparatus LSb be according to local multiplying power update information CMg5 and generate make with carry out luminous point SP Scanning the corresponding serial data DL5 of scanning element U5 pixel shift pixel shift pulse BSCb.It is moved according to the pixel Digit pulse BSCb, Plotting output section 114 make each picture for carrying out the serial data DL5 of the scanning element U5 of the scanning of luminous point SP Shift to one pixel of logical message, one pixel of element.
Thereafter, exposure control unit 116 is based on the setting rhumb line Lx1 detected when describing the starting position of exposure The rotary angle position of rotating cylinder DR and rotary angle position (counter circuit CN3a, CN3b on setting rhumb line Lx3 Count value), judge substrate P description exposure starting position whether transported to be located at setting rhumb line Lx3 on description On line SL2, SL4, SL6.If exposure control unit 116 be judged as describe exposure starting position transported to describe line SL2, SL4, On SL6, then local multiplying power configuration part 112 and Plotting output section 114 are controlled, in turn, starts scanning element U2, U4, U6 The scanning of luminous point SP.
When the situation, exposure control unit 116 is the timing for carrying out describing exposure with scanning element U2, sets local multiplying power Determine portion 112 to export part multiplying power update information CMg2 corresponding with the scanning element U2 of scanning of luminous point SP is carried out to light source dress Set the signal generator 22a of LSa.Whereby, the signal generator 22a of light supply apparatus LSa is according to local multiplying power update information CMg2 and generating makes the pixel shift pulse for carrying out the pixel shift of the serial data DL2 of the scanning element U2 of the scanning of luminous point SP BSCa.According to pixel shift pulse BSCa, Plotting output section 114 makes the scanning element U2's for carrying out the scanning of luminous point SP Shift to one pixel of logical message, one pixel of each pixel of serial data DL2.Similarly, exposure control unit 116 is to scan Unit U4, U6 describe the timing of exposure, make local multiplying power configuration part 112 will part corresponding with scanning element U4, U6 times Rate update information CMg4, CMg6 is exported to the signal generator 22a of light supply apparatus LSb.Whereby, the signal of light supply apparatus LSb produces Life portion 22a is to generate scanning element U4, U6 for making to carry out the scanning of luminous point SP according to local multiplying power update information CMg4, CMg6 Serial data DL4, DL6 pixel shift pixel shift pulse BSCb.According to pixel shift pulse BSCb, Plotting Output section 114 makes the logical message for carrying out each pixel of serial data DL4, DL6 of scanning element U4, U6 of the scanning of luminous point SP Shift to one pixel, one pixel.
According to fig. 4 above it is found that substrate P towards +X direction transport, therefore, describe line SL1, SL3, SL5 it is each in Describe exposure first carries out, after substrate P further transports specific range, carry out describe line SL2, SL4, SL6 it is each in retouch Draw exposure.On the other hand, each polygonal mirror PM of 3 scanning element U1~U3 of the 1st scan module, 3 of the 2nd scan module sweep Each polygonal mirror PM for retouching unit U4~U6 is that have specific phase difference and carry out rotation control, therefore, origin signal SZ1~ SZ3, SZ4~SZ6 are as shown in Figure 10, with time Ts there is phase poorly persistently to generate.Therefore, incidence as shown in Figure 10 is generated Allow signal LPn (LP1~LP6), in from being lighted at the beginning of the description described on line SL1, SL3, SL5 exposure to line is described During description on SL2, SL4, SL6 exposes before will starting, serial data DL2, DL4, DL6 are also exported.Therefore, in quilt Exposure area W description exposure starting position reach describe line SL2, SL4, SL6 it is upper before, by be based on scanning element U2, The scanning of the luminous point SP of U4, U6 and depicting pattern.Therefore, the exposure control unit 116 of Fig. 9 is to allow signal LPn by incidence (LP1~LP6) carries out the logic circuit of logical operation and forbids each corresponding serial data with scanning element U2, U4, U6 The displacement of the pixel of DL2, DL4, DL6.
Also, exposure control unit 116 is in setting rhumb line Lx1, Lx4 detected based on mark position test section 106 Setting rhumb line Lx1, Lx4 that the location information and rotation position test section 108 of alignment mark MKm (MK1~MK4) detects On rotating cylinder DR rotary angle position information, gradually operation substrate P or be exposed the strain (deformation) of region W.For example, In substrate P when on strip direction by biggish tension or the situation deformed by hot processing procedure, it is exposed the shape of region W Shape also generates strain (deformation), and the arrangement of alignment mark MKm (MK1~MK4) does not also become as shown in Figure 4 rectangular-shaped, forms For the state for generating strain (deformation).In substrate P or when being exposed the situation of region W generation strain, it is necessary to corresponding to this change Each multiplying power for describing line SLn, therefore, exposure control unit 116 are based on the substrate P calculated or to be exposed the strain of region W, raw At least one of integral multiplying power update information TMg and local multiplying power update information CMgn.Moreover, the whole multiplying power of the generation is repaired At least one of positive information TMg and local multiplying power update information CMgn are exported to whole multiplying power configuration part 110 or local multiplying power Configuration part 112.Whereby, the precision of double exposure can be promoted.
In turn, exposure control unit 116 also according to substrate P or can be exposed the strain of region W and be directed in each description line SLn Each generate amendment tilt angle information.Amendment tilt angle information based on the generation, the above-mentioned actuator being described above make Each scanning element Un (U1~U6) is around irradiation central axis L en (Le1~Le6) rotation.Whereby, the precision of double exposure further mentions It rises.Exposure control unit 116 also can be whenever carrying out the scanning of luminous point SP by each scanning element Un (U1~U6) or whenever luminous point When the scanning of SP carries out specific times or substrate P or be exposed region W strain tendency be more than permissible range and when changing, At least one of entirety multiplying power update information TMg and local multiplying power update information CMgn are generated again and correct inclination angle letter Breath.
Figure 11 is the figure for indicating to be set to the composition of the signal generator 22a of the inside of light supply apparatus LSa (LSb).Such as Fig. 9 Shown, being set as sending signal generator 22a from local multiplying power configuration part 112 has correction position information Nv and warp information The local multiplying power update information CMgn of (polarity information) POL.The part multiplying power configuration part 112 to each scanning element Un (U1~ U6) remember part multiplying power update information CMgn (CMg1~CMg6).
Signal generator 22a has clock signal generating unit 200, adjusting point specifying part 202 and clock pulse switching part 204.It should Clock signal generating unit 200, adjusting point specifying part 202 and clock pulse switching part 204 etc. can be by FPGA (Field Programmable Gate Array, field programmable lock array) collect and constitutes.Clock signal generating unit 200 generates multiple (N number of) clock signal CKp (p=0,1,2 ..., N-1), clock signal CKp have the base short compared with the period as defined in φ/Vs Paracycle, Te, and assigned phase difference as unit of the correction time of the 1/N of reference period Te.φ is the effective big of luminous point SP Small, Vs is that relative velocity of the luminous point SP relative to the main scanning direction of substrate P as an example, is set as 150mm/sec herein And it is illustrated.Furthermore it when the reference period Te situation long compared with the period as defined in φ/Vs, is irradiated along main scanning direction Luminous point SP expose on the plane of illumination of substrate P with separating specific spaced discrete.It is anti-, in reference period Te compared with by φ/ When the short situation of period as defined in Vs, luminous point SP in a manner of mutually overlapping on main scanning direction to expose to being shone for substrate P It penetrates on face.In this implementation form, in principle, luminous point SP is set to overlap every time with the 1/2 of size φ, for this purpose, by frequency of oscillation Fe It is set as 100MHz.When the situation, reference period Te becomes 1/Fe=1/100 (MHz)=10 (nsec), becomes compared with φ/Vs The value of=3 (μm)/150 (mm/sec)=20nsec small.Also, the generation of clock signal generating unit 200 is assigned if being set as N=50 Give 50 clock signal CK0~CK49 of the phase difference of 0.2nsec (=10 (nsec)/50).
Specifically, clock signal generating unit 200 has clock pulse generating unit (oscillator) 60 and multiple (N-1) delays Circuit De (De01~De49).Clock pulse generating unit 60 is generated by with frequency of oscillation Fe corresponding with whole multiplying power update information TMg (=1/Te) oscillation clock pulse pulse constitute clock signal CK0.In this implementation form, by whole multiplying power update information TMg It is set as 0 (correction amount 0%), clock pulse generating unit 60 generates clock pulse with the frequency of oscillation Fe (reference period Te=10nsec) of 100MHz Signal CK0.
Clock signal (output signal) CK0 from clock pulse generating unit 60 is input into multiple delay circuits of series connection The delay circuit De01 of the first section (front) of De (De01~De49), and it is input to the 1st input terminal of clock pulse switching part 204 Son.Delay circuit De (De01~De049) makes the clock signal CKp as input signal postpone set time (Te/N= 0.2nsec) export.Therefore, the delay circuit De01 of first section exports clock signal (output signal) CK1, and the clock signal is (defeated Signal out) CK1 be reference period Te (10nsec) identical with the clock signal CK0 that clock pulse generating unit 60 generates and relative to when Arteries and veins signal CK0 has the delay of 0.2nsec.Similarly, the 2nd section of delay circuit De02 exports clock signal (output signal) CK2, The clock signal (output signal) CK2 is identical as clock signal (output signal) CK1 of delay circuit De01 from leading portion Reference period Te (10nsec), and relative to clock signal CK1 have 0.2nsec delay.Delay circuit after 3rd section De03~De49 also similarly export clock signal (output signal) CK3~CK49, clock signal (output signal) CK3~ CK49 is benchmark week identical with clock signal (output signal) CK2~CK48 of delay circuit De02~De48 from leading portion Phase Te (10nsec), and the delay relative to clock signal CK2~CK48 with 0.2nsec.
Clock signal CK0~CK49 is the signal that every 0.2nsec is endowed phase difference, therefore, clock signal CK0 become with For reference period Te (10nsec) identical with clock signal CK49 and relative to clock signal CK49 and then have 0.2nsec's The clock signal of delay deviates the signal in 1 period just.Therefore, clock signal CK0 substantially can be considered relative to clock signal The clock signal of each clock pulse pulse daley 0.2nsec of CK49.Clock signal CK1 from delay circuit De01~De49~ CK49 is input into the 2nd~the 50th input terminal of clock pulse switching part 204.
Clock pulse switching part 204 is any one clock pulse letter in 50 inputted clock signal CKp (CK0~CK49) of selection Number CKp and the multiplexer for exporting selected clock signal CKp as clock signal (benchmark clock signal) LTC (selection electricity Road).Therefore, the frequency of oscillation Fa (=1/Ta) of clock signal LTC becomes the oscillation frequency with clock signal CK0~CK49 in principle Rate Fe (=1/Ta), i.e. 100MHz are identical.Control circuit 22 is to respond the clock signal LTC exported from clock pulse switching part 204 Each clock pulse pulse and issue kind of a mode of light S1, S2, control dfb semiconductor laser diode 30,32.Therefore, from light supply apparatus The frequency of oscillation Fa of the light beam LBa (LBb) for the pulse type that LSa (LSb) is projected becomes 100MHz in principle.
Clock pulse switching part 204 is with luminous point SP by the timing for the specific adjusting point CPP being located in scan line, by conduct Clock signal LTC and clock signal CKp, the clock signal CKp i.e. due to the generation of light beam LBa (LBb) exported is switched to Different other clock signals CKp of phase difference.Clock pulse switching part 204 is the timing for passing through adjusting point CPP with luminous point SP, will be selected It is switched to and has relative to the clock signal CKp for being currently selected as clock signal LTC for the clock signal CKp of clock signal LTC Clock signal CKp ± 1 of the phase difference of 0.2nsec.Direction, the i.e. phase of the phase difference of clock signal CKp ± 1 of the switching is prolonged It is according to as local multiplying power update information (update information) that the direction of slow 0.2nsec or phase, which shift to an earlier date the direction of 0.2nsec, Warp information (polarity information) POL of 1 bit of a part of CMgn (CMg1~CMg6) and determine.
When warp information POL is the situation of high " 1 " (elongation), when clock pulse switching part 204 is by relative to current be used as The clock signal CKp of arteries and veins signal LTC output and the clock signal CKp+1 of phase delay 0.2nsec is selected as clock signal LTC simultaneously Output.Also, when warp information POL is the situation of low " 0 " (diminution), when clock pulse switching part 204 is by relative to current be used as The clock signal CKp of arteries and veins signal LTC output and clock signal CKp-1 that phase shifts to an earlier date 0.2nsec is selected as clock signal LTC simultaneously Output.For example, clock pulse switching part 204 is the situation for being CK11 in the current clock signal CKp as clock signal LTC output When, the clock signal CKp exported as clock signal LTC is switched to clock signal when warp information POL is high (H) The clock signal CKp exported as clock signal LTC is switched to clock signal when warp information POL is low (L) by CK12 CK10.During 1 scanning of luminous point SP, identical warp information POL is inputted.
Clock pulse switching part 204 is to keep the scanning element Un of light beam LBn incidence corresponding using with by light beam switching part BDU The warp information POL of local multiplying power update information CMgn determines the phase as the clock signal LTC clock signal CKp exported The direction (direction in direction or delay that phase shifts to an earlier date) of offset.Light beam LBa (LB1~LB3) from light supply apparatus LSa is led Lead to either one or two of scanning element U1~U3.Therefore, the clock pulse switching part 204 of the signal generator 22a of light supply apparatus LSa is base It is stretched in the corresponding part multiplying power update information CMgn of 1 scanning element Un of light beam LBn incidence in scanning element U1~U3 Contracting information POL determines the direction of the phase offset as the clock signal LTC clock signal CKp exported.For example, in light beam LB2 When being incident to the situation of scanning element U2, the clock pulse switching part 204 of light supply apparatus LSa is based on office corresponding with scanning element U2 The warp information POL of portion multiplying power update information CMg2 determines that the phase as the clock signal LTC clock signal CKp exported is inclined The direction of shifting.
Also, the light beam LBb (LB4~LB6) from light supply apparatus LSb is led to either one or two of scanning element U4~U6. Therefore, the clock pulse switching part 204 of the signal generator 22a of light supply apparatus LSb is to be based on and light beam LBn in scanning element U4~U6 The warp information POL of the corresponding local multiplying power update information CMgn of 1 incident scanning element Un, determines to be used as clock signal The direction of the phase offset of the clock signal CKp of LTC output.For example, when light beam LB6 is incident to the situation of scanning element U6, The clock pulse switching part 204 of light supply apparatus LSb is based on the flexible of local multiplying power update information CMg6 corresponding with scanning element U6 Information POL determines the direction of the phase offset as the clock signal LTC clock signal CKp exported.
Specific point on each description line SLn (SL1~SL6) is appointed as adjusting point CPP by adjusting point specifying part 202.It repairs Specifying part 202 is the use based on a part as part multiplying power update information (update information) CMgn (CMg1~CMg6) on schedule Adjusting point CPP is specified in correction position information (setting value) Nv of specified adjusting point CPP.Part multiplying power update information CMgn's Correction position information Nv be to according to along describe line SLn describe pattern description multiplying power (or describe line SLn main scanning Description multiplying power on direction) in the letter for each specified adjusting point CPP for describing equally spaced discrete multiple positions on line SLn Breath, and be the information for indicating the distance interval (at equal intervals) of adjusting point CPP and adjusting point CPP.Whereby, adjusting point specifying part 202 It can will describe the position equally spaced discretely configured on line SLn (SL1~SL6) and be appointed as adjusting point CPP.Adjusting point CPP Such as it is set between the launching position (center of luminous point SP) along the adjacent 2 luminous point SP for describing line SLn projection.
Adjusting point specifying part 202 is to keep the scanning element Un of light beam LBn incidence corresponding using with by light beam switching part BDU Local multiplying power update information CMgn correction position information Nv and specified adjusting point CPP.Due to the light from light supply apparatus LSa Beam LBa (LB1~LB3) is led to either one or two of scanning element U1~U3, so adjusting point specifying part 202 is to be based on and scanning The correction position letter of the corresponding local multiplying power update information CMgn of 1 scanning element Un of light beam LBn incidence in unit U1~U3 Cease Nv and specified adjusting point CPP.For example, when light beam LB2 is incident to the situation of scanning element U2, the amendment of light supply apparatus LSa Point specifying part 202 will be retouched based on the correction position information Nv of local multiplying power update information CMg2 corresponding with scanning element U2 The multiple positions equally spaced discretely configured on line drawing SLn2 are appointed as adjusting point CPP.
Also, since the light beam LBb (LB4~LB6) from light supply apparatus LSb is led to any of scanning element U4~U6 It is a, so the adjusting point specifying part 202 of the signal generator 22a of light supply apparatus LSb is to be based on and light in scanning element U4~U6 The correction position information Nv of the corresponding local multiplying power update information CMgn of 1 scanning element Un of beam LBn incidence and specified amendment Point CPP.For example, the adjusting point specifying part 202 of light supply apparatus LSb is base when light beam LB6 is incident to the situation of scanning element U6 In the correction position information Nv of local multiplying power update information CMg6 corresponding with scanning element U6, will describe on line SLn6 at equal intervals Multiple positions that ground discretely configures are appointed as adjusting point CPP.
If being specifically illustrated to the adjusting point specifying part 202, adjusting point specifying part 202 has frequency counter circuit 212 with shift pulse output section 214.Frequency counter circuit 212 is subtraction count device, and is entered from clock pulse switching part 204 The clock pulse pulse (pulse of benchmark clock pulse) of the clock signal LTC of output.The clock signal LTC's exported from clock pulse switching part 204 Clock pulse pulse is to be input to frequency counter circuit 212 via lock circuit GTa.Indicate that each of scanning element U1~U3 is to retouch Description during drawing allows signal SQ1~SQ3 to become logic and and be applied to lock circuit GTa.Describing allows signal SQ1~SQ3 Being in response to the incident of Figure 10 allows signal LP1~LP3 and generates.It is high (H) that lock circuit GTa, which is in describing permission signal SQn, The lock that period opens.That is, frequency counter circuit 212 only in describe allow signal SQn be it is high during in clock signal LTC Clock pulse pulse counted.Therefore, the lock circuit GTa of light supply apparatus LSa is will to describe any for allowing signal SQ1~SQ3 It is a for high (H) during the clock pulse pulse of clock signal LTC that is inputted export to frequency counter circuit 212.Similarly, right The lock circuit GTa of the signal generator 22a of light supply apparatus LSb, which applies 3 descriptions corresponding with scanning element U4~U6, allows letter Number SQ4~SQ6.Therefore, the lock circuit GTa of light supply apparatus LSb is will to describe to allow either one or two of signal SQ4~SQ6 for high (H) During the clock pulse pulse of clock signal LTC that is inputted export to frequency counter circuit 212.
Frequency counter circuit 212 is that initial count value is preset as correction position information (setting value) Nv, whenever input Count value is successively decreased when the clock pulse pulse of clock signal LTC.Frequency counter circuit 212 is when count value becomes 0 by 1 pulse Consistent signal Idc export to shift pulse output section 214.That is, frequency counter circuit 212 is in correction position information Nv Consistent signal Idc is exported when the clock pulse pulse of meter number clock signal LTC.The consistent signal Idc be when being shown in next affectionately There are the information of adjusting point CPP before punching generates.If also, frequency counter circuit 212 be entered after count value becomes 0 it is next Count value is then preset as correction position information Nv by clock pulse pulse.Whereby, it can equally spaced be specified along description line SLn multiple Adjusting point CPP.
Shift pulse output section 214 exports shift pulse CS to clock pulse switching part if being entered consistent signal Idc 204.If generating shift pulse CS, clock pulse switching part 204 switches the clock signal CKp exported as clock signal LTC.It should Shift pulse CS is the information for indicating adjusting point CPP, is after the count value of frequency counter circuit 212 becomes 0 and to be entered It is generated before next clock pulse pulse.Therefore, it is produced in the clock pulse pulse according to the count value 0 for making frequency counter circuit 212 Position in the substrate P of the luminous point SP of raw light beam LBa (LBb) and the light beam LBa (LBb) generated according to next clock pulse pulse Luminous point SP substrate P on position between there are adjusting point CPP.
If as above every 1 description line SLn projects 20000 luminous point SP, and equally spaced discrete on line SLn in describing Ground configures 40 adjusting point CPP, then is interval configuration modifications point with 500 luminous point SP (the clock pulse pulse of clock signal LTC) CPP, correction position information Nv are set as 500.
Figure 12 is the timing diagram for indicating the signal of each portion output of the signal generator 22a shown in Figure 11.Clock signal It is identical with the clock signal CK0 that clock pulse generating unit 60 exports that 50 clock signal CK0~CK49 that generating unit 200 generates are Reference period Te, but its phase postpones 0.2nsec every time.Thus, for example, clock signal CK3 becomes relative to clock signal CK0 And phase delay 0.6nsec person, clock signal CK49 become relative to clock signal CK0 phase delay 9.8nsec person.Frequency dividing Counter circuit 212 is in the clock signal exported with correction position information (setting value) Nv meter number from clock pulse switching part 204 Consistent signal Idc (illustration omitted) is exported when the clock pulse pulse of LTC, corresponds to this, the output of shift pulse output section 214 displacement arteries and veins Rush CS.Shift pulse output section 214 exports following shift pulse CS, and shift pulse CS usually exports higher (logical value 1) Signal, but lower (logical value 0) is reduced to when exporting consistent signal Idc, in the reference period by clock signal CKp Higher (logical value 1) is risen to when the time of the half (half period) of Te.Whereby, shift pulse CS is in frequency counter Circuit 212 is after the clock pulse pulse of correction position information (setting value) Nv meter number clock signal LTC and to be entered next clock pulse Rise before pulse.
Clock pulse switching part 204 is in response to the rising of shift pulse CS, the clock signal that will be exported as clock signal LTC CKp is switched to will be generated from shift pulse CS before the clock signal CKp that is exported make phase towards right with warp information POL ' Direction offset resulting clock signal CKp ± 1 0.2nsec answered.In the example of Figure 12, before shift pulse CS will be generated Clock signal CKp as clock signal LTC output is set as CK0, and warp information POL is set as " 0 " (diminution), therefore, response The rising of shift pulse CS and be switched to clock signal CK49.In this way, when warp information POL is the situation of " 0 ", whenever luminous point When (that is, whenever generating shift pulse CS) SP passes through adjusting point CPP, clock pulse switching part 204 is shifted to an earlier date every time with phase The mode of 0.2nsec switches the clock signal CKp as clock signal LTC output.Therefore, as clock signal LTC output (choosing Select) clock signal CKp according to CK0 → CK49 → CK48 → CK47 → sequence switch.In shift pulse CS The position of the adjusting point CPP of generation, the period of clock signal LTC become short relative to reference period Te (=10nsec) The time (9.8nsec) of 0.2nsec, hereafter, Yu Guangdian SP (generate next shift pulse CS before passing through next adjusting point CPP Before), the period of clock signal LTC becomes reference period Te (=10nsec).
Anti-, when warp information POL is the situation of " 1 ", (that is, whenever generation when luminous point SP passes through adjusting point CPP When shift pulse CS), clock pulse switching part 204 be switch in a manner of postponing 0.2nsec every time using phase it is defeated as clock signal LTC The clock signal CKp (selected) out.Therefore, the clock signal CKp as clock signal LTC output (selection) is according to CK0 → CK1 → CK2 → CK3 → sequence switching.In the position for the adjusting point CPP that shift pulse CS is generated, clock signal The period of LTC becomes the time (10.2nsec) relative to reference period Te (=10nsec) long 0.2nsec, hereafter, Yu Guangdian SP passes through before next adjusting point CPP (generate next shift pulse CS before), and the period of clock signal LTC becomes reference period Te (=10nsec).
In this implementation form, the luminous point SP that effective size φ is 3 μm is every time in such a way that 1.5 μm overlap along master Scanning direction projection, therefore, the correction time (± 0.2nsec) in the period of the clock signal LTC at adjusting point CPP is equivalent to 0.03 μm (=1.5 (μm) × (± 0.2 (nsec)/10 (nsec))), every 1 pixel is ± 0.03 μm flexible.
Figure 13 A is the figure being illustrated to the pattern P P described when not carrying out the modified situation of local multiplying power, and Figure 13 B is pair The figure that the pattern P P that the timing diagram according to shown in Figure 12 describe when the situation of local multiplying power amendment (diminution) is illustrated.Again Person indicates luminous point SP of the intensity as high levels using solid line, is represented by dotted lines the luminous point SP that intensity is low level or zero.As Figure 13 A, Shown in Figure 13 B, the luminous point SP depicting pattern PP that is generated by each clock pulse pulse in response to clock signal LTC.In order to by Figure 13 A It is distinguished with the clock signal LTC and pattern P P of Figure 13 B, and indicates that Figure 13 A (does not carry out local multiplying power amendment with LTC1, PP1 Situation) clock signal LTC, pattern P P, the clock pulse of Figure 13 B (carry out local multiplying power modified situation) is indicated with LTC2, PP2 Signal LTC, pattern P P.
When not carrying out the modified situation of local multiplying power, as shown in FIG. 13A, the size Pxy of each pixel of description is swept in master Retouching becomes fixed length on direction.Furthermore the length of the sub-scanning direction (X-direction) of pixel is indicated with Px, master is indicated with Py The length of scanning direction (Y-direction).If carrying out local multiplying power amendment (diminution) according to timing diagram as shown in figure 12, such as scheme Shown in 13B, the length Py that the size Pxy of the pixel comprising adjusting point CPP becomes pixel reduces the state of Δ Py (=0.03 μm). Anti-, if the local multiplying power amendment extended, the size Pxy of the pixel comprising adjusting point CPP become the length Py of pixel Extend the state of Δ Py (=0.03 μm).
Furthermore about the pixel shift of serial data DLn, though it is not specifically mentioned, whenever from clock pulse switching part 204 by when When the clock pulse pulse of arteries and veins signal LTC exports 2, Plotting output section 114 shown in Fig. 9 just makes output to light supply apparatus LSa (LSb) logical message of the pixel of the serial data DLn of driving circuit 36a shifts 1 amount of pixels (1 bit amount).Whereby, 2 Luminous point SP (the clock pulse pulse of clock signal LTC) is corresponding with 1 pixel.
As described above, the exposure device EX of this implementation form is according to pattern data to according to from light-pulse generator portion 35 Kind of light S1, S2 and the luminous point SP of light beam LB (Lse, LBa, LBb, LBn) generated carries out intensity modulation, and make luminous point SP along Description line SLn in substrate P is relatively scanned, whereby in depicting pattern in substrate P.Exposure device EX at least has clock pulse Signal generator 200, control circuit (light source control portion) 22 and clock pulse switching part 204.As described above, clock signal generating unit 200 generate multiple (N=50) clock signal CKp (CK0~CK49), and clock signal CKp had compared with the week determined by φ/Vs Phase short reference period Te (such as 10nsec), and be single with the correction time of the 1/N of reference period Te (such as 0.2nsec) Position assigns phase difference.Control circuit (light source control portion) 22 is to respond any one clock signal in multiple clock signal CKp Each clock pulse pulse of CKp (clock signal LTC) and the mode for generating light beam LB controls light-pulse generator portion 35.Clock pulse switching part 204 Be with luminous point SP by describe line SLn on specify specific adjusting point CPP timing, by due to the generation of light beam LB when Arteries and veins signal CKp, the clock signal CKp i.e. as clock signal LTC output are switched to other different clock signals of phase difference CKp.Therefore, the multiplying power for describing line SLn (pattern of description) can be fine corrected, the overlapping that can carry out micron-sized precision exposes Light.
Correction position information (setting value) Nv of the part multiplying power update information CMgn (CMg1~CMg6) can arbitrarily become More, it is suitably set according to the multiplying power for describing line SLn.For example, can also be located at the adjusting point CPP described on line SLn becomes 1 Mode set correction position information Nv.It is corrected also, can also change when along every 1 scanning for the luminous point SP for describing line SLn The value of location information Nv also can change correction position information Nv's in 1 scanning when luminous point SP is located at adjusting point CPP Value.When the situation, in describing, the case where multiple adjusting point CPP are specified in the discrete position on line SLn is also constant, but can be by It changes correction position information Nv and keeps the interval of adjusting point CPP uneven.It in turn, also can be in along the light beam LBn for describing line SLn Every 1 scanning or the rotation every 1 weeks of polygonal mirror PM of (luminous point SP), keep the quantity for describing the amendment pixel on line SLn constant, and Keep the position for correcting pixel (adjusting point CPP) different.
[variation of the 1st implementation form]
Above-mentioned 1st implementation form can be deformed as follows.Furthermore it is identical to composition mark identical with above-mentioned implementation form Symbol, be illustrated centered on different piece.
(variation 1)
It, will be selective the light beam LBa (LBb) of light supply apparatus LSa (LSb) will be come from above-mentioned 1st implementation form Ground supplies to the selection of either one or two of scanning element Un (U1~U6) and is set as acousto-optic tune with optical element AOMn (AOM1~AOM6) Dependent element.That is, by the 1 diffraction light exported relative to incident beam using after specific diffraction angular deflection as the light beam of description LBn and supply to scanning element Un, but select with optical element AOMn (AOM1~AOM6) also can be for without using diffraction phenomenon Photoelectricity deflecting member.Figure 14 indicates light beam switching corresponding with 1 scanning element Un in the light beam switching part BDU of variation 1 The composition in portion, in this variation, instead of selection shown in fig. 6 above optical element AOM1 and cell side incidence mirror IM1 Combined system and being arranged make light beam LBa (LBb) incidence from light supply apparatus LSa (LSb) photoelectric cell OSn and according to The polarization spectroscope BSn that the polarization characteristic of the light beam of photoelectric cell OSn makes light beam penetrate or reflect is penetrated.
It, will be from the advance side of light supply apparatus LSa (LSb) the light beam LBa (LBb) projected as collimated light beam in Figure 14 To be set as with X-axis is incident to photoelectric cell OSn light beam LBa (LBb) when parallel be set as towards Y-direction polarize after linear polarization Light, if to photoelectric cell OSn in being formed by the voltage for applying number Kv between electrode EJp, EJm on face opposite in Y-direction, The light beam for then having penetrated photoelectric cell OSn becomes straight after being rotated by 90 ° from polarized light state when incidence and polarizing towards Z-direction Linearly polarized light, and it is incident to polarization spectroscope BSn.When applying alive situation between Yu Buxiang electrode EJp, EJm, photoelectricity has been penetrated The light beam of element OSn become polarized light state when keeping incident and towards the rectilinearly polarized light after Y-direction polarization.Therefore, in electricity When the off-state that the voltage between pole EJp, EJm is zero, the light beam from photoelectric cell OSn is directed through the polarization of cubic The polarization divisional plane psp (45 degree of face is tilted relative to each face in the face XY and the face YZ) of spectroscope BSn.In to electrode EJp, EJm Between when applying alive on-state, the light beam from photoelectric cell OSn is the polarization divisional plane psp in polarization spectroscope BSn Reflection becomes the description after carrying out intensity modulation according to Plotting (such as description bit string data SBa, SBb in Fig. 9) and uses Light beam LBn and towards scanning element Un.Photoelectric cell OSn is to be become by presentation refractive index with 1 power of the electric field strength applied The tabellae dextromethorphai Hydrobromidi-Compositae effect or refractive index of change are with the crystal medium or amorphous of the Kerr effect of the 2 powers variation of the electric field strength applied Body medium is constituted.Also, photoelectric cell OSn can also make the Faraday effect of variations in refractive index for presentation instead of electric field by magnetic field Crystal medium.
(variation 2)
Figure 15 indicates that selection optical element AOM1~AOM6 and the unit of light beam switching part BDU shown in fig. 6 will be constituted Side incidence mirror IM1~IM6 is replaced as the variation 2 when the situation of the composition of the variation 1 of Figure 14.From light supply apparatus LSa with flat (beam diameter is via using such as Fig. 6, Fig. 9 institute for the light beam LBa for the rectilinearly polarized light that the form of 1mm or less) projects to row light beam The light beam phase shifter portion SFTa for the acousto-optic varying element (or audio-optical deflection element) shown passes sequentially through photoelectric cell OS1, polarization point After light microscopic BS1, photoelectric cell OS2, polarization spectroscope BS2, photoelectric cell OS3, polarization spectroscope BS3, it is incident to absorber TR1.Polarization spectroscope BS1 is when applying electric field to photoelectric cell OS1, using light beam LBa as the light beam LB1 direction of description Scanning element U1 reflection.Similarly, polarization spectroscope BS2 be in photoelectric cell OS2 apply electric field when, using light beam LBa as The light beam LB2 of description is reflected towards scanning element U2, and polarization spectroscope BS3 is incited somebody to action when applying electric field to photoelectric cell OS3 Light beam LBa is reflected as the light beam LB3 of description towards scanning element U3.In Figure 15, only in photoelectric cell OS1~OS3 Photoelectric cell OS2 apply electric field, and be only incident to and sweep as light beam LB2 from the light beam LBa that light beam phase shifter portion SFTa is projected Retouch unit U2.
Similarly, the linear polarization projected from light supply apparatus LSb in the form of collimated light beam (beam diameter is 1mm or less) The light beam LBb of light is passed sequentially through via the light beam phase shifter portion SFTb for using acousto-optic varying element (or audio-optical deflection element) Photoelectric cell OS4, polarization spectroscope BS4, photoelectric cell OS5, polarization spectroscope BS5, photoelectric cell OS6, polarization spectroscope BS6 Later, it is incident to absorber TR2.Polarization spectroscope BS4 is when applying electric field to photoelectric cell OS4, using light beam LBb as retouching The light beam LB4 drawn is reflected towards scanning element U4, and polarization spectroscope BS5 is when applying electric field to photoelectric cell OS5, by light Beam LBb is reflected as the light beam LB5 of description towards scanning element U5, and polarization spectroscope BS6 is applied in photoelectric cell OS6 When electric field, reflected using light beam LBb as the light beam LB6 of description towards scanning element U6.In Figure 15, only to photoelectric cell Photoelectric cell OS6 in OS4~OS6 applies electric field, and from the light beam LBb of light beam phase shifter portion SFTb injection as light beam LB6 Only it is incident to scanning element U6.
As an example, light beam phase shifter portion SFTa, SFTb is constituted such as Figure 16 using audio-optical deflection element AODs.Acousto-optic Deflecting element AODs is believed by with the driving as RF power from selection element drive control part 102 shown in Fig. 9 Number HFn identical high-frequency driving signal HGa, HGb and drive.Parallel light beam LBa (LBb) from light supply apparatus LSa (LSb) It is to become coaxial and incident with the optical axis of the lens CG1 of focal length f1, in face pu as optically focused in a manner of beam waist.Audio-optical deflection The inflexion point of element AODs is configured at the position of face pu.In the state of driving signal HGa (HGb) disconnection, become light in face pu Light beam LBa (LBb) with a tight waist not diffraction and the lens CG2 of focal length f2 is incident to from face pu, become anti-in mirror OM after collimated light beam It penetrates and is incident to absorber TR3.When driving signal HGa (HGb) is applied to the on-state of audio-optical deflection element AODs, acousto-optic Deflecting element AODs is generated with 1 of the light beam LBa (LBb) after diffraction angular deflection corresponding with the frequency of driving signal HGa (HGb) Secondary diffraction light.Herein, which is known as the light beam LBa (LBb) through deflecting.Due to the deflection of audio-optical deflection element AODs Point is configured at the position i.e. face pu of the focal length f2 of lens CG2, so become and lens from the light beam LBa (LBb) that lens CG2 is projected The parallel collimated light beam of the optical axis of CG2, and it is incident to the photoelectric cell OS1 or OS4 of Figure 15.
By the frequency changed to the audio-optical deflection element AODs driving signal HGa (HGb) applied, and penetrated from lens CG2 Light beam LBa (LBb) out is with the state parallel with the optical axis of lens CG2 in displacement on the direction vertical with optical axis.Light The direction of the displacement of beam LBa (LBb) be on the incident end face of the photoelectric cell OSn shown in Figure 14 (OS1 or OS4) with Z Direction is corresponding, and shift amount is corresponding with the variable quantity of frequency of driving signal HGa (HGb).When the situation of this variation, light beam is moved Phase device portion SFTa (SFTb) is commonly arranged relative to 3 scanning element U1, U2, U3 (U4, U5, U6).Therefore, to audio-optical deflection The frequency for the driving signal HGa (HGb) that element AODs applies can be with either one or two of photoelectric cell OS1~OS3 of Figure 15 or photoelectricity Change (frequency modulating) to the timing synchronization that either one or two of element OS4~OS6 is turned on.Whereby, pass through photoelectric cell The light beam LBa (LBb) of OS1~OS3 (OS4~OS6) is parallel to Z-direction in Figure 14 and shifts, in polarization spectroscope BS1~ Light beam LBn (LB1~Lb6) after BS3 (BS4~BS6) reflection is parallel to X-direction in Figure 14 and shifts.Whereby, can make to come from The luminous point SP of the light beam LBn of scanning element Un corresponding with the photoelectric cell OSn of on-state is had become is in sub-scanning direction (X Direction) on pettiness amount rapid traverse.
More than, in this implementation form, in order to which the light beam LBa (LBb) of light supply apparatus LSa (LSb) will be come from selectively Distribution either one or two of to 3 scanning element U1~U3 (U4~U6), and use the photoelectric cell OS1 without deflecting action~ OS3 (OS4~OS6) therefore in order to which the position to luminous point SP on sub-scanning direction in being micro-adjusted, and is arranged using having The light beam phase shifter portion SFTa (SFTb) of the audio-optical deflection element AODs of deflecting action.
(variation 3)
Figure 17 A and B indicate to replace selection optical element AOM1~AOM6 used in above-mentioned implementation form or variation Or audio-optical deflection element AODs and be arranged and do not utilize an example of the light beam deflecting member of diffraction.Figure 17 A is shown in spy Fixed thickness is formed as the opposite parallel side of the crystal medium of the permeability of prism-like (triangle) (on being in Figure 17 A Lower surface) it is formed with the photoelectric cell ODn of electrode EJp, EJm.Crystal medium be as chemical composition and with KDP (KH2PO4), The material of the expressions such as ADP (NH4H2PO4), KD*P (KD2PO4), KDA (KH2AsO4), BaTiO3, SrTiO3, LiNbO3, LiTaO3 Material.Light beam LBa (LBb) from the inclined-plane incidence of photoelectric cell ODn is the electric field between electrode EJp, EJm when being zero, according to The difference of the refractive index of the initial refractive index and air of crystal medium and deflect, and from another inclined-plane project.If to electrode EJp, Applying the electric field of fixed value or more between EJm, then the refractive index of crystal medium changes from initial value, therefore, incident light beam LBa (LBb) become from another inclined-plane to be different from the light beam LBn that the angle of initial angle projects.Even with such photoelectric cell ODn can also switch over light beam LBa (LBb) timesharing from light supply apparatus LSa (LSb) and supply to scanning element U1 ~U6's is each.Also, pettiness the light beam projected quickly can be changed by the electric field strength that change applies photoelectric cell ODn Therefore the deflection angle of LBn can also make photoelectric cell ODn while have handoff functionality and sweep the luminous point SP in substrate P in pair Retouch the light beam shift function that pettiness amount shifts on direction.In turn, the individual light beam phase shifter portion such as Figure 16 can also be replaced The audio-optical deflection element AODs of SFTa (SFTb) and use photoelectric cell ODn.
Also, Figure 17 B, which indicates to use, utilizes such as Japanese Patent Laid-Open 2014-081575 bulletin, International Publication No. 2005/ The example of the light beam deflecting member of the photoelectric cell KDn of KTN (KTa1-xNbxO3) crystal as being disclosed in No. 124398 specifications. In Figure 17 B, photoelectric cell KDn is crystal Jie for being formed as longer corner post shape by the direction of advance along light beam LBa (LBb) It matter and is constituted across the crystal medium oppositely disposed electrode EJp, EJm.Photoelectric cell KDn is the temperature to be kept constant The mode of degree (such as 40 degree or so) is accommodated in the shell with temperature adjustment function.Electric field strength between electrode EJp, EJm is When zero, the light beam LBa (LBb) from a surface feeding sputtering of the KTN crystal medium of corner post shape is before straight line in KTN crystal medium Into, and projected from other end.If applying electric field strength between electrode EJp, EJm, pass through the light beam in KTN crystal medium LBa (LBb) is deflected towards the direction of electric field, and is projected from other end as light beam LBn.KTN crystal medium is also refractive index The material changed according to electric field strength, but compared with various crystal mediums listed above, with low one electric field strength (number Hundred V) obtain biggish variations in refractive index.It therefore, can be in relatively large if changing the voltage applied between electrode EJp, EJm Range (such as 0 degree~5 degree) in quickly adjust from photoelectric cell KDn project light beam LBn relative to original light beam LBa (LBb) deflection angle.
It, also can be to light beam LBa (LBb) timesharing from light supply apparatus LSa (LSb) even with such photoelectric cell KDn Ground is switched over and is supplied each to scanning element U1~U6.Also, the electric-field strength applied by change to photoelectric cell KDn Degree, can quickly change the deflection angle of the light beam LBn of injection, therefore, can also make photoelectric cell KDn and meanwhile have handoff functionality and Make the luminous point SP in substrate P in the function of shifting on sub-scanning direction.In turn, the individual light beam phase shift such as Figure 16 can also be replaced The audio-optical deflection element AODs of device portion SFTa (SFTb) and use photoelectric cell KDn.
According to the 1st above implementation form or its etc. each variation, in order to make along each scanning for describing line SLn Luminous point SP is provided with and utilizes each displacement optics for being set to scanning element Un (U1~U6) in shifting on sub-scanning direction The mechanical optics phase shifter of component SR (parallel flat Sr2) and using audio-optical deflection element AODs, photoelectric cell OSn, ODn, KDn etc. makes the photoelectricity phase shifter for each light beam LBn displacement for being incident to scanning element Un (U1~U6).Therefore, in will be based on The sub-scanning direction of the description line SLn of the scanning of the luminous point SP of each light beam LBn from scanning element Un (U1~U6) When positional relationship is set as correction (calibration) of specific state (initial configuration status etc.), mechanical optics phase shifter is used (parallel flat Sr2), even if by the correction also the remaining margin of error can by photoelectricity phase shifter (audio-optical deflection element AODs, Photoelectric cell OSn, ODn, KDn) more subtly it is modified.
[the 2nd implementation form]
Secondly, being illustrated to the 2nd implementation form.Furthermore to identical with above-mentioned implementation form (also including variation) It constitutes and marks identical symbol, only different piece is illustrated.In the composition as Fig. 6 illustrated by above-mentioned implementation form In, by the multiple relay systems for being based on collector lens CD and collimator lens (collimation lens) LC, to from light supply apparatus LSa (LSb) light beam LBa (LBb) forms multiple beam waists (focal point), and each configuration selection in the position of its beam waist is used up Learn element (acousto-optic varying element) AOM1~AOM6.The beam waist position of light beam LBa (LBb) be with finally with the surface of substrate P The mode of (each luminous point SP of light beam LB1~LB6) optical conjugate is set, therefore, even if because of selection optical element (acousto-optic modulation Element) AOM1~AOM6 characteristic variations etc. and deflection angle generates error, also can inhibit the luminous point SP in substrate P in subscan side It drifts about on (direction Xt).Therefore, in for each scanning element Un to the description line SLn of luminous point SP in sub-scanning direction (Xt Direction) on be micro-adjusted with the range of Pixel Dimensions (several μm) degree situation when, make scanning element shown in fig. 5 above Parallel flat Sr2 inclination in Un.In turn, in order to automate the inclination of parallel flat Sr2, small-sized piezoelectric electro is set The mechanism of the class of machine or the monitor system of tilt quantity.
Even if however, automate the inclination of parallel flat Sr2, due to for Mechanical Driven, so for example have and multi-panel The control of corresponding higher responsiveness of the time of 1 week rotation amount of mirror PM is also more difficult.Therefore, in the 2nd implementation form, to certainly The light beam of light supply apparatus LS (LSa, LSb) to each scanning element Un such as fig. 7 above send photosystem (light beam switching part BDU) Optics constitute or configuration slightly change, make selection optical element (acousto-optic varying element) AOM1~AOM6 while having The handoff functionality of light beam and to the position of luminous point SP in the shift function being micro-adjusted on sub-scanning direction.Hereinafter, utilizing figure 18~Figure 22 is illustrated the composition of this 2nd implementation form.
Figure 18 is the wave being shown in detail in the pulsed light generating unit 20 of light supply apparatus LSa (LSb) shown in fig. 7 above The figure of the composition of long converter section, Figure 19 are the light indicated from light supply apparatus LSa (LSb) to initial selection with optical element AOM1 The figure of the optical path of beam LBa (omitting LBb), Figure 20 are to indicate to use up from selection to learn element AOM1 to next section selection optical element The optical path and the selection figure of the composition of the driving circuit of optical element AOM1 of AOM2, Figure 21 is to selection optical element AOM1 The figure that the case where selection later is shifted with the light beam selection in mirror (branch's reflecting mirror) IM1 with light beam is illustrated, Tu22Shi The figure that the movement of light beam from polygonal mirror PM to substrate P is illustrated.
As shown in figure 18, from the ejecting end 46a of the optical amplifier fiber 46 in light supply apparatus LSa, enlarged kind of light (light Beam) Lse with the lesser angle of divergence (NA: numerical aperture) injection.Lens element GL (GLa) will plant light Lse in the 1st wavelength convert Become the mode optically focused of beam waist in element (wavelength converting optical element) 48.Therefore, wave is carried out in the 1st Wavelength changing element 48 1 harmonic optcial beam after long conversion is incident to lens element GL (GLb) with diversity.Lens element GLb is humorous by 1 time Glistening light of waves beam optically focused in a manner of becoming beam waist in the 2nd Wavelength changing element (wavelength converting optical element) 50.In the 2nd wavelength 2 harmonic optcial beams after the progress wavelength convert of conversion element 50 are incident to lens element GL (GLc) with diversity.Lens Element GLc is so that 2 harmonic optcial beams are substantially parallel light pencil LBa (LBb) and the injection window from light supply apparatus LSa The mode that 20H is projected configures.It is number mm hereinafter, preferably 1mm or so from the diameter for projecting the light beam LBa that window 20H is projected.Such as This, each of Wavelength changing element 48,50 is with the ejecting end by lens element GLa, GLb and with optical amplifier fiber 46 The mode of 46a (luminous point) optical conjugate is set.Therefore, i.e., convenient for the variation of the crystal property because of Wavelength changing element 48,50 And cause generate harmonic optcial beam direction of advance be slightly slanted situation when, also can inhibit from project window 20H project light beam Drift on the angle direction (orientation) of LBa.Furthermore in Figure 18, lens element GLc is separated with injection window 20H and is indicated, But lens element GLc itself can be also configured to the position for projecting window 20H.
From projecting, the light beam LBa that window 20H is projected is as shown in figure 19, along the expander based on 2 collector lenses CD0, CD1 The optical axis AXj of system advances, and is converted to beam diameter and is reduced into the substantially parallel light beam of 1/2 or so (0.5mm or so) and is incorporated to and penetrates To paragraph 1 selection optical element AOM1.From project the light beam LBa of window 20H in collector lens CD0 and collector lens CD1 it Between spot position Pep become beam waist.Collector lens CD1 is arranged as the collector lens CD1 in fig. 6 above.Into And selecting the inflection point Pdf (Diffraction Point) of the light beam in optical element AOM1 is by based on collector lens CD0, CD1 Expander system and with project window 20H optical conjugate mode set.In turn, spot position Pep be with the light in Figure 18 The ejecting end 46a of fine image intensifer 46, the mode of each optical conjugate of Wavelength changing element 48,50 are set.Also, selection is used up The light beam that 1 diffraction light emission when learning the deflection direction of the light beam of element AOM1, switching as incident light beam LBa goes out The diffraction direction of LB1 is set as Z-direction (making the luminous point SP in substrate P in the direction shifted on sub-scanning direction).Pass through selection The collimated light beam for being for example about 0.5mm or so as beam diameter with the light beam LBa of optical element AOM1, as 1 diffraction light The light beam LB1 of injection also becomes the collimated light beam that beam diameter is about 0.5mm or so.That is, (also including in above-mentioned each implementation form Variation) in, in restraining light beam LBa (LBb) in a manner of becoming beam waist in selection optical element AOM1, but Yu Ben In 2 implementation forms, make by selecting the light beam LBa (LBb) with optical element AOM1 to be the collimated light beam with small diameter.
As shown in figure 20, it is deflected when having penetrated the light beam LBa for selecting to use optical element AOM1 and switching as 1 diffraction light Light beam LB1 be incident to the collimator lens CL1 (being equivalent to the lens CL1 in Fig. 6) coaxially configured with optical axis AXj.Choosing Select the position that the front side focus of collimator lens CL1 is set in the inflection point Pdf of optical element AOM1.Therefore, light beam LBa It with light beam LB1 is received in a manner of becoming beam waist respectively in the face Pip of the rear side focus of collimator lens (collector lens) CL1 It holds back.Along collimator lens CL1 optical axis AXj advance light beam LBa be incident to from face Pip with divergent state it is shown in fig. 6 Collector lens (collector lens) CD2 becomes beam diameter again and is the collimated light beam of 0.5mm or so, and is incident to the 2nd section of selection With optical element AOM2.2nd section of selection with the inflection point Pdf of optical element AOM2 be by based on collimator lens CL1 with The relay system of collector lens CD2 and be configured to conjugate relation with the inflection point Pdf of optical element AOM1 with selection.
The mirror IM1 of selection shown in fig. 6 is that it is saturating with optically focused to be configured at collimator lens CL1 in this 2nd implementation form Near face Pip between mirror CD2.In face Pip, light beam LBa, LB1 become most thin beam waist and in separating in Z-direction, because This, the configuration of the reflecting surface IM1a of mirror IM1 becomes easy.Selection with the inflection point Pdf of optical element AOM1 and face Pip be by Become pupil location by collimator lens CL1 and as relation of plane, reflecting surface of the autocollimator lens CL1 towards mirror IM1 The central axis (chief ray) of the light beam LB1 of IM1a becomes parallel with the chief ray (optical axis AXj) of light beam LBa.In the reflection of mirror IM1 Light beam LB1 after face IM1a reflection is to be converted to collimated light beam by the collimator lens CL1a same with collector lens CD2, And towards the mirror M10 of scanning element U1 shown in fig. 5.Furthermore face Pip is by the optically focused in collimator lens CL1 and Figure 19 Lens CD1 and with spot position Pep become optical conjugate relationship.Therefore, face Pip also with the optical amplifier fiber of Figure 18 46 Ejecting end 46a, each of Wavelength changing element 48,50 become conjugate relation.That is, face Pip is set to using by lens element Relay lens system that GLa, GLb, GLc, collector lens CD0, CD1 and collimation lens CL1 are constituted and and optical amplifier fiber Each conjugation of 46 ejecting end 46a, Wavelength changing element 48,50.
The optical axis AXm of collimator lens CL1a be set to it is coaxial with the irradiation center line Le1 in Fig. 5, in switching when When based on selecting with the deflection angle of the light beam LB1 of optical element AOM1 as predetermined angular (set angle of benchmark), in light beam LB1 Heart line (chief ray) is incident to collimator lens CL1a to become coaxial mode with optical axis AXm.Also, the reflecting surface of mirror IM1 IM1a is set as following size such as Figure 20, that is, and in a manner of not interdicting the optical path of light beam LBa reflect only light beam LB1, and I.e. convenient for reaching the also certainly the reflected beams LB1 when situation slightly shifted in Z-direction of the light beam LB1 to reflecting surface IM1a. Wherein, when the situation for the position that the reflecting surface IM1a of mirror IM1 is configured at face Pip, in forming light beam LB1 on reflecting surface IM1a The luminous point of optically focused, it is therefore advantageous to make mirror IM1 in X-direction in such a way that reflecting surface IM1a is slightly deviated from the position of face Pip It deviates and configures.Also, being formed with the higher reflectance coating of ultraviolet light tolerance (dielectric substance multilayer film) in reflecting surface IM1a.
In 2 implementation form of Yu Ben, it is arranged in the selection element drive control part 102 shown in fig. 9 above to make Selection has the driving circuit 102A of the handoff functionality of light beam and the two of shift function with optical element AOM1.Driving circuit 102A is to constitute: local oscillator circuit 102A1 (VCO: voltage-controlled oscillator etc.) by following each portion to receive to make to cope with The revise signal FSS that the frequency for the driving signal HF1 that selection optical element AOM1 applies changes from reference frequency, and generate with Cope with the corresponding amendment high-frequency signal of the modified frequency of reference frequency;Hybrid circuit 102A2 will be produced by reference oscillator 102S The high-frequency signal of raw frequency stabilization is with the amendment high-frequency signal from local oscillator circuit 102A1 in such a way that frequency is mutually added and subtracted Synthesis;And amplifying circuit 102A3, by using hybrid circuit 102A2 and the high-frequency signal after frequency synthesis is converted to and is amplified to It is suitably selected for the driving signal HF1 of the amplitude of the driving of the ultrasonic oscillator with optical element AOM1.Amplifying circuit 102A3 has The incidence generated in the selection element drive control part 102 of response diagram 9 allows signal LP1 and cuts the driving signal HF1 of high frequency It is changed to the handoff functionality of high levels Yu low level (or amplitude zero).Therefore, during driving signal HF1 is the amplitude of high levels (during signal LP1 is H level), selection optical element AOM1 makes light beam LBa deflect and generate light beam LB1.It is such as above The optical system and driving circuit 102A of mirror IM1 and collimator lens CL1a as Figure 20 are for other selection optical elements The each of AOM2~AOM6 is also similarly arranged.In above composition, local oscillator circuit 102A1 and hybrid circuit 102A2 It is to be functioned as the frequency modulating circuit for changing the frequency of driving signal HF1 according to the value of revise signal FSS.
In driving circuit 102A, when revise signal FSS indicates the situation of correction amount zero, from amplifying circuit 102A3 The deflection angle that the frequency of the driving signal HF1 of output is set as the light beam LB1 based on selection optical element AOM1 becomes regulation Assigned frequency as angle (set angle of benchmark).When revise signal FSS indicates correction amount+Δ Fs situation, based on choosing It selects and corrects driving signal HF1 with the mode that the deflection angle of the light beam LB1 of optical element AOM1 increases Δ θ γ relative to predetermined angular Frequency.When revise signal FSS indicates correction amount-Δ Fs situation, with the light beam based on selection with optical element AOM1 The deflection angle of LB1 corrects the frequency of driving signal HF1 relative to the mode that predetermined angular reduces Δ θ γ.If the deflection of light beam LB1 Angle is then incident to the position of the light beam LB1 of the reflecting surface IM1a of mirror IM1 slightly in the side Z relative to predetermined angular variation ± Δ θ γ Upward displacement, and the light beam LB1 (collimated light beam) that autocollimator lens CL1a is projected is slightly slanted relative to optical axis AXm.It utilizes Figure 21 is further illustrated the situation.
The index path for the case where Figure 21 is the displacement for the light beam LB1 that amplification is shown in selection optical element AOM1 deflection. In light beam LB1 by selection with optical element AOM1 and with predetermined angular deflect situation when, the central axis and collimation of light beam LB1 The optical axis AXm of device lens CL1a becomes coaxial.At this point, the central axis for the light beam LB1 that autocollimator lens CL1 is projected is from original Light beam LBa central axis (optical axis AXj) towards -Z direction separate Δ SF0.If selection optical element will be driven from the state The frequency of the driving signal HF1 of AOM1 improves such as Δ Fs, then in the selection deflection angle phase of the light beam LB1 of optical element AOM1 Δ θ γ is increased for predetermined angular, and is located to the central axis AXm' for the light beam LB1' for reaching mirror IM1 from the side-Z, optical axis AXj court To the position of separation Δ SF1.In this way, according to the variation of the Δ Fs of the frequency of driving signal HF1, and towards the light beam of mirror IM1 The central axis AXm' of LB1' is from specified position (the coaxial position with optical axis AXm) towards -Z direction with Δ SF1- Δ SF0 transverse shift (moving in parallel).
In there is the face Pip' for being equivalent to face Pip on optical axis AXm, in face Pip', light beam LB1 (LB1') is to become light beam The mode optically focused of waist.It is parallel with optical axis AXm towards the central axis AXm' of the light beam LB1' of collimator lens CL1a from face Pip', by By face Pip' to be set in the position of the front side focus of collimator lens CL1a, and the light beam that autocollimator lens CL1a is projected LB1' is converted to relative to optical axis AXm in the collimated light beam being slightly slanted in the face XZ.It is final with face Pip' in this implementation form The mode being conjugated with the surface (luminous point SP) of substrate P configure in scanning element U1 lens system (lens Be1, Be2 in Fig. 5, Cylindrical lens CYa, CYb, f θ lens TF).
Figure 22 be by the expansion of the optical path of 1 reflecting surface RP (RPa) of the polygonal mirror PM in self-scanning unit U1 to substrate P and Resulting figure is observed from the direction Yt.Light beam LB1 after being deflected by selection with optical element AOM1 with predetermined angular be in It is incident to the reflecting surface RPa of polygonal mirror PM in the parallel face in the face XtYt and reflects.Be incident to reflecting surface RPa light beam LB1 be in In the face XtZt, by the 1st cylindrical lens CYa shown in fig. 5 in being restrained on reflecting surface RPa on the direction Zt.In reflecting surface RPa Light beam LB1 after reflection is in the face parallel with the face XtYt of optical axis AXf comprising f θ lens FT, according to the rotation of polygonal mirror PM Rotary speed and high speed deflects, and be concentrated in substrate P in the form of luminous point SP via f θ lens FT and the 2nd cylindrical lens CYb. Luminous point SP is that one-dimensional scanning is carried out on vertical with paper direction in Figure 21.
On the other hand, such as Figure 21, in face Pip' relative to light beam LB1 with the light beam after Δ SF1- Δ SF0 transverse shift LB1' is incident to the position that the irradiation position of the light beam LB on the reflecting surface RPa relative to polygonal mirror PM is slightly deviated towards the direction Zt It sets.Whereby, the optical path of the light beam LB1' after reflecting surface RPa reflection is in the face XtZt, with slightly inclined with the optical path of light beam LB1 The state of shifting is concentrated in substrate P in the form of luminous point SP' by f θ lens FT and the 2nd cylindrical lens CYb.Polygonal mirror PM's Reflecting surface RPa is the pupil plane for being configured at f θ lens FT optically, by the face tilt correction of 2 cylindrical lenses CYa, CYb Effect, and in the face XtZt of Figure 22, the surface of reflecting surface RPa and substrate P becomes conjugate relation.Therefore, if exposing to more Light beam LB1 on the reflecting surface RPa of face mirror PM is slightly shifted such as light beam LB1' towards the direction Zt, then the luminous point SP in substrate P is such as In shifts delta SFp on sub-scanning direction as luminous point SP'.
Such as above composition, by the frequency for the driving signal HF1 for making selection optical element AOM1 from assigned frequency Variation ± Δ Fs, and luminous point SP can be made in displacement ± Δ SFp on sub-scanning direction.The shift amount (| Δ SFp |) it is used up by selection Learn the maximum magnitude of deflection angle of element AOM1 itself, the size of the reflecting surface IM1a of mirror IM1, to the multi-panel in scanning element U1 The multiplying power of the optical system (relay system) of mirror PM, the width in the direction Zt of the reflecting surface of polygonal mirror PM, from polygonal mirror PM to base The limitation of the multiplying power (multiplying power of f θ lens FT) of plate P etc., but effective size (diameter) journey being set as in the substrate P of luminous point SP The range of Pixel Dimensions (Pxy) degree defined on degree or Plotting.Certainly, it also may be set to the shift amount more than it.Again Selection is illustrated with optical element AOM1 and scanning element U1 by person, but about other selections with optical element AOM2~ AOM6 and scanning element U2~U6 are also same.
In this way, in this implementation form, it can be in response to the switching function of the incident light beam for allowing signal LPn (LP1~LP6) Can and responsive corrections signal FSS luminous point SP shift function and dual-purpose selection use optical element AOMn (AOM1~AOM6), because This, send the composition of photosystem (light beam switching part BDU) to become simple to the light beam of each scanning element Un (U1~U6) supply light beam. In turn, the acousto-optic varying element (AOM that light beam selects the displacement with luminous point SP is respectively set with for each scanning element Un Or AOD) situation compare, pyrotoxin can be reduced, and the temperature stability of exposure device EX can be improved.Especially, acousto-optic is driven The driving circuit (102A) of varying element becomes biggish pyrotoxin, due to the high frequency that driving signal HF1 is 50MHz or more, therefore And it is configured near acousto-optic varying element.Even if the mechanism for keeping driving circuit (102A) cooling is arranged, if its quantity is more Temperature in device is also easy in rising in the short time, it is possible to because optical system (lens or mirror) temperature change caused by change It moves and causes to describe precision reduction.Therefore, it is more satisfactory for as heat source driving circuit and acousto-optic varying element it is less.Also, in It selects each be acted upon by temperature changes for using optical element AOMn (AOM1~AOM6) and makes as incident beam LBa (LBb) 1 diffraction light deflection light beam LBn deflection angular variable situation when, in this implementation form, can by be arranged according to temperature Degree changes adjustment easily will be inclined to the feedback control system of the value of the driving circuit 102A of Figure 20 revise signal FSS assigned The variation of corner is offset.
The light beam shift function of the selection optical element AOMn of this implementation form can be to from multiple scanning element Un's The position of the description line SLn of the luminous point SPn of each light beam LBn on sub-scanning direction rapidly in being micro-adjusted.For example, if In a manner of changing the correction amount based on revise signal FSS when incidence allows signal LP1 to become H level shown in control figure 20 Selection optical element AOM1, then can make to describe for each reflecting surface of polygonal mirror PM, the i.e. scanning each time of luminous point SP Line SL1 on sub-scanning direction with the range of pixel size (or size of luminous point) degree in being shifted.Therefore, make adjacent scanning list First Un it is each around irradiation central axis L e1~Le6 pettiness rotation and to it is each describe line SLn inclination be adjusted after, such as above The 1st implementation form as amendment describe multiplying power, in addition to this, make as in the second embodiment describe line SLn on sub-scanning direction Displacement, whereby, can be improved it is each describe line SLn end pattern plotter when engagement precision.Also, in having been formed on substrate When new pattern is described in the base pattern overlapping for electronic device of P, its overlapping precision also can be improved.
In the 2nd above implementation form, the surface (position of light beam LBn optically focused in the form of luminous point SP) of substrate P with Face Pip' in Figure 21 is set as the relationship being conjugated each other, in turn, face Pip'(Pip) also with the wave in light supply apparatus LSa (LSb) Each relationship for being set as being conjugated each other of long conversion element 48,50, the ejecting end 46a of optical amplifier fiber 46.Therefore, in Make 1 reflecting surface of polygonal mirror PM towards the static state in fixed direction by light beam LBn via f θ lens FT and cylindrical lens CYb When being projected to 1 point of the situation on the surface of substrate P in the form of luminous point SP, even if the crystal because of Wavelength changing element 48,50 is special Property variation and cause the direction of advance of harmonic optcial beam to generate drift in terms of the angle, the luminous point SP in substrate P also will not be by it It influences and remain stationary.This means the scanning starting position of the main scanning direction of luminous point SP or responds the description of origin signal SD Starting position does not keep stable in drifting about on main scanning direction.Therefore, pattern plotter can be carried out with stable precision for a long time.
[the 3rd implementation form]
Figure 23 is the 3rd implementation shape for indicating the specific composition of the scanning element U1 (Un) applied in above-mentioned 2nd implementation form The figure of state, and be from orthogonal with plane (plane parallel with X/Y plane) of scanning direction (deflection direction) comprising light beam LB1 Plane (XZ plane) observe resulting figure.Furthermore in Figure 23, the face optical axis AXf and XY of f θ lens system FT is matched in parallel It sets, the reflecting mirror M15 of front end in a manner of 90 degree of bendings to configure optical axis AXf.In in scanning element U1, along from light beam The light beam LB1 of the incoming position of LB1 to plane of illumination (substrate P) send light path, is provided with reflecting mirror M10, beam expander BE, inclines The variable parallel flat HVP in oblique angle, aperture diaphragm PA, reflecting mirror M12, the 1st cylindrical lens CYa, reflecting mirror M13, reflecting mirror M14, polygonal mirror PM (reflecting surface RP), f θ lens system FT, reflecting mirror M15 and the 2nd cylindrical lens CYb.The composition of Figure 23 is basic It is upper identical as the composition of Fig. 5, omit the component etc. that a part does not need explanation.Moreover, will be set in Fig. 5 in this implementation form The parallel flat Sr2 of the displacement optical component SR set is set as parallel flat (quartz plate) HVP of translucency.
The light beam LB1 of the collimated light beam reflected by mirror IM1 shown in fig. 6 towards -Z direction is to be incident to put down relative to XY Face tilts 45 degree of reflecting mirror M10.Reflecting mirror M10 is to divide incident light beam LB1 towards self-reflection mirror M10 towards -X direction From reflecting mirror M12 towards -X direction reflect.Light beam LB1 after reflecting mirror M10 reflection is through beam expander BE and aperture diaphragm PA and be incident to reflecting mirror M12.Beam expander BE makes the enlarged-diameter of the light beam LB1 penetrated.Beam expander BE has collector lens The Be1 and collimation lens Be2 for making the light beam LB1 collimated light beam dissipated after restraining by collector lens Be1.By the expansion Beam device BE and be easy to expose to light beam LB6 into the opening portion of aperture diaphragm PA.In collector lens Be1's and collimation lens Be2 Between configured with using driving motor (not shown) etc. change tilt angle quartz parallel flat HVP.It is flat by this is changed The inclination angle of row plate HVP can make to describe line SLn in sub-scanning direction in the scanning track of the luminous point SP scanned in substrate P On with pettiness amount (for example, several times~ten several times of effective size φ or so of luminous point SP) displacement.
Reflecting mirror M12 45 degree is configured relative to the inclination of YZ plane, makes incident light beam LB1 towards self-reflection mirror M12 is reflected towards the reflecting mirror M13 that -Z direction separates towards -Z direction.In reflecting mirror M12 towards -Z direction reflection after light beam LB1 be in After the 1st cylindrical lens CYa (the 1st optical component), to reaching reflecting mirror M13.Reflecting mirror M13 is inclined relative to X/Y plane The configuration of oblique 45 degree of ground, reflects incident light beam LB1 towards reflecting mirror M14 towards +X direction.Light after reflecting mirror M13 reflection Beam LB1 is to be projected to polygonal mirror PM after reflecting mirror M14 reflection.1 reflecting surface RP of polygonal mirror PM makes incident light beam LB1 It is reflected towards the f θ lens system FT with the optical axis AXf extended along the x axis towards +X direction.
The inclination angle of the parallel flat HVP between lens system Be1, Be2 for constituting beam expander BE is set to by change, Line SLn can be made to describe in shifting on sub-scanning direction.Figure 24 A, Figure 24 B are to describe line to the inclination by parallel flat HVP The figure that the case where SLn is shifted is illustrated, Figure 24 A is the plane of incidence being parallel to each other and outgoing plane phase for indicating parallel flat HVP For light beam LBn center line (chief ray) in 90 degree of state figure, that is, be to indicate parallel flat HVP in not inclining in the face XZ The figure of oblique state.Figure 24 B is the plane of incidence being parallel to each other for indicating parallel flat HVP and outgoing plane relative to light beam LBn Center line (chief ray) is from 90 degree of inclined situations, i.e. parallel flat HVP relative to the face YZ with the figure of the inclined state of angle η.
In turn, in Figure 24 A, Figure 24 B, when not inclined state (angle η=0 degree) parallel flat HVP, lens system The optical axis AXe of Be1, Be2 are set as the center of the circular open by aperture diaphragm PA, are incident to the light beam LBn of beam expander BE Adjusting of centerline be with optical axis AXe become it is coaxial.Also, the position of the rear side focus of lens system Be2 with aperture diaphragm PA The mode of position consistency of circular open configure.The position of aperture diaphragm PA is to set as follows, that is, by the 1st column Face lens CYa, on sub-scanning direction, from the position of the reflecting surface RP of polygonal mirror PM (or the front side focus of f θ lens system FT Position) regard as the position of substantially pupil.On the other hand, on main scanning direction, aperture diaphragm PA be with f θ lens The mode of position, that is, entrance pupil position optical conjugate of the front side focus of system FT configures.Therefore, in making parallel flat HVP When situation inclined with angle η, being incident to the light beam LBn of lens system Be2 through parallel flat HVP (is herein diverging light Beam) center line be minutely to be moved in parallel relative to optical axis AXe towards -Z direction, from lens system Be2 project light beam LBn turn It is changed to collimated light beam, and the center line of light beam LBn is slightly slanted relative to optical axis AXe.
Matched in a manner of the position consistency of the circular open with aperture diaphragm PA the position of the rear side focus of lens system Be2 Set, therefore, from the light beam LBn (collimated light beam) that lens system Be2 is obliquely projected will not on aperture diaphragm PA in Z-direction Offset, and persistently it is projected to circular open.It therefore, by the light beam LBn of the circular open of aperture diaphragm PA has been with by intensity The state that the intensity on the basis of 1/e2 in distribution is correctly ended, with relative to optical axis AXe in the face XZ in sub-scanning direction On the angle that is slightly slanted towards back segment the 1st cylindrical lens CYa.Aperture diaphragm PA is on sub-scanning direction, from polygonal mirror Corresponding to pupil location from the point of view of the reflecting surface RP of PM, according to the light beam LBn for the circular open for having passed through aperture diaphragm PA in pair Inclination angle on scanning direction, and be incident to the light beam LBn (in being restrained on sub-scanning direction) of the reflecting surface RP of polygonal mirror PM in Position on reflecting surface slightly shifts.Therefore, in polygonal mirror PM reflecting surface RP reflection after light beam LBn also with relative to packet The parallel face in the face XY containing the optical axis AXf of f θ lens system FT shown in Figure 23 is slightly incident to f θ towards the state that Z-direction shifts Lens system FT.As a result, being incident to the light beam LBn of the 2nd cylindrical lens CYb in being slightly slanted on sub-scanning direction, and can make The position of the luminous point SP for the light beam LBn being projected in substrate P on sub-scanning direction in slightly shifting.
[the 4th implementation form]
Figure 25 is the side for indicating the composition of the control device 16 of exposure device EX (pattern plotter device) of the 4th implementation form Block figure.In Figure 25, polygonal mirror drive control part 100, the selection element drive control part 102, light beam of control device 16 are constituted Control device 104 (exposure control unit 116), mark position test section 106 and rotation position test section 108 are and fig. 9 above Shown in constitute it is identical.Also, only typically schematically indicating the light beam LBa supply from light supply apparatus LSa in Figure 25 To the state of scanning element U1, selection is same as Figure 20 with optical element AOM1, collimation lens CL1, cell side incidence mirror IM1 Ground configuration, the scanning element U1 of self-reflection mirror M10 to the 2nd cylindrical lens CYb are constituted in the same manner as Figure 23.In this implementation form In, it is provided with comprising to make the parallel flat HVP of the light beam phase shifter as mechanical optics in scanning element U1 with specific The inclined piezoelectric motor of stroke etc. servo-control system DU and basal layer measurement unit MU.Basal layer measurement unit MU have pair The waveform variation of the photosignal of photodetector DT (referring to Fig. 5) in scanning element U1 quickly carries out the electricity of digital sampling Road is constituted, based on for double exposure and luminous point SP to base pattern established in substrate P (with metal layer, insulating layer, partly lead Body layer etc. is corresponding) Strength Changes of reflected light that generate when being scanned, measure main scanning direction or the subscan of base pattern The new pattern of position or double exposure on direction and the opposite location error (overlay error) of base pattern.Utilize substrate Measurement result, the information especially relevant to overlay error of layer measurement unit MU measurement are used to generate to selection member shown in Figure 20 The revise signal FSS that driving circuit 102A in part drive control part 102 applies.By so as to each of scanning element Un Photodetector DT (referring to Fig. 5) is set and is provided as the basal layer measurement unit MU of position measurement unit, can be confirmed without to mutatis mutandis Label MKn the overlapping precision being exposed in region (nmosfet formation region of Fig. 4) W or confirmation pattern exposure in substrate The shift position (shift position of nmosfet formation region W) of P.
Since parallel flat HVP is set to each of scanning element Un, so make to put down by for each scanning element Un The tilt angle rl of row plate HVP continuously changes, and can make the size of the sub-scanning direction for the pattern being depicted in substrate P with Slenderness ratio is flexible.Therefore, i.e., the situation convenient for locally stretching in strip direction (sub-scanning direction) the upper substrate P of substrate P When, it can also be well maintained and be formed together to alignment mark MKn in the base pattern the (the 1st for electronic device in substrate P Layer pattern) the 2nd layer of double exposure (description) of pattern when overlapping precision.The strip direction (sub-scanning direction) of substrate P Part it is flexible for example can as shown in Figure 4 as by using the detection of aligming microscope AM1m shown in Figure 25 along strip direction with fixation Spacing (such as 10mm) be formed in substrate P width direction two sides alignment mark MK1, MK4 and measure.Specifically, Can as shown in Figure 4 as by aligming microscope AM11, AM14 successively shoot alignment mark MK1, MK4 using photographing element, by The variation (spacing variation of label etc.) in the strip direction of mark position is examined using mark position test section 106 and rotation position Survey portions 108 etc. are parsed using exposure control unit 116 and are measured.Therefore, according to the flexible of the part of the conveyance direction of substrate P It measures (scaled error), assigns the mobile position of the sub-scanning direction according to substrate P to servo-control system DU from exposure control unit 116 Set (or amount of movement) make parallel flat HVP gradually tilt as control instruction.It whereby, can description position to pattern and substrate P Shift position linkedly in being gradually adjusted on sub-scanning direction, and can inhibit the overlapping for biggish substrate P of stretching The precision of exposure reduces.
Also, parallel flat HVP also can be used for adjusting odd-numbered description line SL1, SL3, SL5 and even-numbered description line The interval of the sub-scanning direction (conveyance direction of substrate P) of SL2, SL4, SL6.For example, the conveying speed in substrate P generates mitigation Variation situation when, cause because of the speed fluctuation with the odd-numbered pattern drawn of description line drawing with even-numbered description line The pattern of description on sub-scanning direction with micron order in being deviated, and joining accuracy deteriorates.It therefore, also can be by from measurement rotation The measurement signal of encoder ENja, ENjb (in Figure 25, only typically indicating EN1a, EN2a) of the rotation position of tumbler cylinder DR The rotation position test section 108 counted detects the variation (speed fluctuation of substrate P) of the rotation speed of rotating cylinder DR, The inclination of servo-control system DU driving parallel flat HVP is utilized according to the increase and decrease amount of the variation.
In turn, light beam phase shifter (the light-beam position adjustment member, the 1st of the mechanical optics of parallel flat HVP can will also be utilized Adjustment member) simultaneously for luminous point SP in the coarse regulation of the position adjustment on sub-scanning direction, it will be selected using shown in Figure 25 With optical element AOM1 (or photoelectric cell ODn, KDn shown in audio-optical deflection element AODs, Figure 17 shown in fig. 16 above Deng) photoelectricity light beam phase shifter (light-beam position adjustment member, the 2nd adjustment member, the 2nd adjustment optical component) simultaneously be used for light Point SP is in the micro-adjustment of the position adjustment on sub-scanning direction.In such as Figure 25 by parallel flat HVP and selection optical element When the situation of AOM1 (AOMn) combination, the parallel flat HVP of the light beam phase shifter as mechanical optics can be in inclined capable of rushing Make the luminous point SP in substrate P in ten amount of pixels of carry digit on sub-scanning direction (for example, ± 100 μm or so) within the scope of journey, it is another The selection of aspect, the light beam phase shifter as photoelectricity can be such that the luminous point SP in substrate P sweeps in pair with optical element AOM1 (AOMn) Retouch the pettiness range rapid traverse that amount of pixels (several times or so of the size φ of luminous point SP) are for example counted on direction.
In the photoelectricity using selection optical element (audio-optical deflection element) AOMn, AODs or photoelectric cell ODn, KDn etc. Light beam phase shifter, by generate each time it is shown in Fig. 10 it is incident allow signal LPn when change the value of revise signal FSS, And the position of the sub-scanning direction of luminous point SP can be quickly micro-adjusted when every 1 time scanning.Therefore, it is fine that description can be improved Pattern when description quality, can especially reduce by with it is multiple describe line SLn each descriptions pattern in main scanning direction Bonding error when upper engagement.In this implementation form, as an example, photodetector DT and basal layer shown in Figure 25 can be used Measurement unit MU and substantially immediately measure bonding error degree.For example, in Fig. 4, to describe line SL1 and describe line SL2's The pattern of each description is when the situation engaged on sub-scanning direction, if being formed with base pattern (the 1st layer of figure in substrate P Case), then the basal layer measurement unit MU being arranged in the scanning element U1 by that will utilize to describe line SL1 progress pattern plotter (schemes 25) measure bonding part overlay error information, with utilize with describe line SL2 progress pattern plotter scanning element U2 in The information of overlay error of the bonding part for the identical basal layer measurement unit MU measurement being arranged is compared, and be able to confirm that with On the basis of base pattern with describe line SL1 and describe line SL2 each description pattern in the bonding error on sub-scanning direction.
When the situation of Fig. 4, the position of the sub-scanning direction in substrate P to describe line SL1 description is mobile in substrate P After describing line SL1 and describing the amount of space of the sub-scanning direction of line SL2, to describe line SL2 description, therefore, with its amount of space Mobile time generation time is poor, if but every the appropriate amount of movement (such as every 1mm or every 5mm) of substrate P gradually into The measurement of overlay error of the row based on basal layer measurement unit MU, then can grasp the tendency of bonding error (whether error becomes larger).In Embody bonding error become larger as tendency situation when, in a manner of its bonding error reduction, based on utilize basal layer measurement unit The information of the bonding error of MU measurement is adjusted to the choosing for corresponding at least one of scanning element U1 and scanning element U2 and being arranged The revise signal FSS that the driving circuit 102A (referring to Figure 20) in element drive control part 102 applies is selected, to along description line The position of the sub-scanning direction of the luminous point SP of at least one scanning of SL1 and description line SL2 is micro-adjusted.
(another variation 1)
In above each implementation form or variation, light beam LBn (luminous point SP) will be made in shifting on sub-scanning direction The tiltable parallel flat Sr2 or HVP of light beam phase shifter (position adjustment means, the 1st adjustment member) as mechanical optics Be set in scanning element Un from mirror M10 to the optical path of polygonal mirror PM in, but also may be disposed at from polygonal mirror PM to substrate P In optical path.In turn, the light beam phase shifter of mechanical optics also may be disposed at the cell side incidence mirror IMn from light beam switching part BDU (IM1~IM6) is into the optical path of the mirror M10 of scanning element Un.As described above, the light beam phase shifter the (the 1st of mechanical optics Adjustment member, the 1st adjustment optical component) the luminous point SP of light beam LBn can be made to move up with relatively large range in sub-scanning direction Position, but the error for depending on mechanical precision is easy residual, therefore, can be used simultaneously light beam phase shifter (the 2nd adjustment structure of photoelectricity Part, the 2nd adjustment optical component), to reduce residual error.When the situation, the light beam phase shifter of photoelectricity is preferably along coming from The optical path that light beam LBa, LBb of light supply apparatus LSa, LSb advance is set to the light beam phase shifter of mechanical optics nearby.
(another variation 2)
In each of scanning element (delineation unit) Un, lens system Be1, Be2 of beam expander BE figure for example above is constituted Shown in 23, with the convex systems setting with positive refracting power, but also can be as shown in figure 26, after being reflected for reflecting mirror M10 The lens system Be1 of light beam LBn incidence be substituted for the concavees lens system Be1' with negative refractive power.Figure 26 is schematically to put It is big to indicate in the optical path in scanning element (delineation unit) Un shown in Figure 23 in the optical path of self-reflection mirror M10 to aperture diaphragm PA Light beam LBn state figure.Becoming effective beam diameter in the light beam LBn of reflecting mirror M10 reflection is 1mm below thin flat Row light beam and be incident to concavees lens system Be1'.Lens system Be1' makes incident light beam LBn one side according to lens system The focal length diverging of Be1' is incident to the convex systems Be2 with positive refracting power on one side.Before making concavees lens system Be1' The position consistency of the front side focal length of the position and convex systems Be2 of side focal length, and the light beam projected from convex systems Be2 LBn as illustrated in fig. 23, become the collimated light beam of effective beam diameter amplification and towards aperture diaphragm PA.Using recessed Mirror system Be1' compared with using the beam expander of 2 convex systems Be1, Be2, can contract with the beam expander of convex systems Be2 Physical distance between short 2 lens systems.
Also, being provided only with makes sweeping for luminous point SP in the beam expander BE of the scanning element shown in Figure 23 (delineation unit) Un Retouch track describe line SLn in substrate P in the parallel flat HVP shifted to mechanical optics in sub-scanning direction (X-direction).So And in order to which the entirety for describing line SLn is micro-adjusted in main scanning direction (Y-direction), it also can be by the shifting as X-direction The parallel flat HVPx of phase device is arranged side by side along optical axis AXe in saturating with the parallel flat HVPy of the phase shifter as Y-direction Between mirror system Be1' and lens system Be2.When the situation, to make the inclined Pivot axle Sy of parallel flat HVPx with Be set to the inclined Pivot axle Sx of parallel flat HVPy in interior with the orthogonal face optical axis AXe (parallel with the face YZ) It is mutually orthogonal.
(another variation 3)
To describing the whole in being micro-adjusted in main scanning direction (Y-direction) as mechanical optics of line SLn The parallel flat HVPy of phase shifter also can be as shown in figure 27, is set to after f θ lens system FT.Figure 27 is indicated from Figure 23 institute The polygonal mirror PM in scanning element (delineation unit) Un shown to substrate P optical system configurations figure.In f θ lens system FT Later, light beam LBn is scanned in main scanning direction (Y-direction), therefore, such as Figure 27, in reflecting mirror M15 and the 2nd cylinder When the situation of parallel flat HVPy is set between lens CYb, parallel flat HVPy is set as the Y-direction with cylindrical lens CYb Size same degree length.In turn, the rotation for keeping the parallel flat HVPy of Figure 27 tilted in the face parallel with the face YZ Turn central axis Sx be set in parallel with X-axis, and with in reflecting mirror M15 bending after become the f θ lens system parallel with Z axis The mode that the optical axis AXf of system FT is orthogonal is set.

Claims (19)

1. a kind of pattern plotter device is to scan the description light beam being concentrated on substrate in the form of luminous point along the 1st direction And the delineation unit of depicting pattern is multiple in being configured on the 1st direction, intersects by the substrate is past with the 1st direction The 2nd direction on movement, and the pattern described using multiple delineation units is carried out in engaging on the 1st direction Describe, and have:
Position measurement unit, measurement should be by the positions for being exposed region on the substrate that the multiple delineation unit is described It sets;
1st adjustment member is to make the pattern of each description using the delineation unit be exposed area relative to described The location error in domain is reduced, and according to the position measured using the position measurement unit to based on each of the delineation unit The position of the luminous point be adjusted on the 2nd direction in the movement of the substrate;And
2nd adjustment member is to make using the pattern of each description of the delineation unit in connecing on the 2nd direction Error is closed to reduce, and to the position of each luminous point based on the delineation unit to be higher than in the movement of the substrate The responsiveness of 1st adjustment member is adjusted on the 2nd direction.
2. pattern plotter device according to claim 1, wherein
The substrate is the flexible sheet substrate that has using the 2nd direction as strip direction, and is had along the described 2nd Direction with specifically design interval formation multiple labels, and
The position measurement unit has mark position test section, which is the mobile side in the sheet substrate Upwards in the upstream side of the description position of the pattern based on the delineation unit, each position of the multiple label is successively detected It sets.
3. pattern plotter device according to claim 2, wherein
1st adjustment member is according to each in institute of the multiple label detected by the mark position test section The interval stated on the 2nd direction is enterprising in the 2nd direction to the position of the luminous point relative to the error that the design is spaced Row adjustment.
4. pattern plotter device according to claim 3, wherein
The each of the multiple delineation unit has: polygonal rotating mirror, have make the description light beam in the 1st direction The multiple reflectings surface for changing angle on corresponding direction and reflecting;And scanning optical system, it will be in the polygonal rotating mirror Reflective surface after the description light beam in optically focused on the substrate at luminous point;And
1st adjustment member is the description light beam for making to be projected to the reflecting surface of the polygonal rotating mirror by Mechanical Driven Position on the reflecting surface of the polygonal rotating mirror in the mechanical optics phase shift of side's upward displacement corresponding with the 2nd direction Device.
5. pattern plotter device according to claim 4, and then have and generate the light supply apparatus for describing light beam, and
2nd adjustment member is set between the light supply apparatus and the 1st adjustment member, by electrical physical property control System makes to be projected to the position of the description light beam of the reflecting surface of the polygonal rotating mirror in the reflecting surface of the polygonal rotating mirror On in the photoelectricity phase shifter of side's upward displacement corresponding with the 2nd direction.
6. pattern plotter device according to claim 5, wherein
Photoelectricity phase shifter is the acousto-optic modulation that deflection angle can be adjusted according to the frequency of the RF power applied as driving signal Element or audio-optical deflection element.
7. pattern plotter device according to claim 4, wherein
In the substrate, it has been formed together base pattern with the multiple label,
The each of the multiple delineation unit has photodetector, which is in by the luminous point for describing light beam It scans during describing the new pattern for answering double exposure to the base pattern, detects the luminous point and the base pattern is carried out The variation of the reflected light generated when scanning, and
The position measurement unit includes basal layer measurement unit, which is based on from the multiple delineation unit The photosignal of each photodetector, measurement are retouched on the basis of the base pattern using each of the delineation unit The bonding error between the new pattern drawn.
8. pattern plotter device according to claim 7, wherein
2nd adjustment member is in the way of the bonding error reduction measured by the basal layer measurement unit, to institute The position for stating luminous point is adjusted on the 2nd direction.
9. a kind of pattern plotter method is the description light for making each projection from multiple delineation units along the configuration of the 1st direction The luminous point of beam makes the substrate along the 2nd intersected with the 1st direction in being scanned on substrate on the 1st direction Direction is mobile, will be described using the pattern of each description of the multiple delineation unit in engaging on the 1st direction, And include:
In the measurement stage, it is the position for the reference pattern that detection is formed in the substrate in the movement of the substrate, and measures The position for being exposed region on the substrate;
1st adjusting stage was to be made to utilize each of the delineation unit according to the position measured in the measurement stage It is exposed region described in the pattern alignment of a description, and to the position of each luminous point based on the delineation unit in institute It states in the movement of substrate and is adjusted on the 2nd direction;And
2nd adjusting stage was to make using the pattern of each description of the delineation unit in connecing on the 2nd direction Error is closed to reduce, and it is finer to position the 1st adjusting stage of each luminous point based on the delineation unit Ground is adjusted on the 2nd direction.
10. pattern plotter method according to claim 9, wherein
The substrate is that have flexible sheet substrate using the 2nd direction as strip direction, and the reference pattern is edge The 2nd direction with specifically design interval formation multiple labels, and
The measurement stage is in the description position on the moving direction of the sheet substrate in the pattern based on the delineation unit Each position of the multiple label is successively detected in the upstream side set.
11. pattern plotter method according to claim 10, wherein
1st adjusting stage is according to each in the 2nd side of the multiple label detected in the measurement stage Error of the upward interval relative to the design interval, the position of the luminous point is adjusted on the 2nd direction.
12. pattern plotter method according to claim 11, wherein
The each of the multiple delineation unit has: polygonal rotating mirror, have make the description light beam in the 1st direction The multiple reflectings surface for changing angle on corresponding direction and reflecting;And scanning optical system, it will be in the polygonal rotating mirror Each reflective surface after the description light beam in optically focused on the substrate at luminous point;And
In the 1st adjusting stage, each reflection for being projected to the polygonal rotating mirror is made by the Mechanical Driven of adjustment member The position of the description light beam in face on the reflecting surface of the polygonal rotating mirror in direction corresponding with above-mentioned 2nd direction in moving up Position.
13. pattern plotter method according to claim 12, wherein
In the substrate, it has been formed together base pattern with the multiple label,
The multiple delineation unit it is each in be provided with photodetector, which is in the light by above-mentioned description light beam During the new pattern for answering double exposure is described in the scanning of point to above-mentioned base pattern, above-mentioned luminous point is detected to above-mentioned base pattern The variation of the reflected light generated when being scanned, and
In the measurement stage, based on the photosignal of each photodetector from the multiple delineation unit, meter It surveys and utilizes the bonding error between the new pattern of each description of the delineation unit on the basis of the base pattern.
14. pattern plotter method according to claim 13, wherein
2nd adjusting stage is in a manner of the bonding error reduction measured in the measurement stage, to the light The position of point is adjusted on the 2nd direction.
15. a kind of pattern plotter device, has: polygonal rotating mirror makes to be carried out according to the pattern that should be depicted on substrate strong Description light beam after degree modulation is in carrying out one-dimensional scanning on main scanning direction;And scanning optical system, it will carry out one-dimensional The description light beam of scanning is concentrated on the substrate in the form of luminous point;And by the main scanning direction of the luminous point Scanning and the substrate and the luminous point the sub-scanning direction intersected with the main scanning direction on relative movement and in Depicting pattern on the substrate, and have:
1st adjustment member of mechanical optics is in order to the luminous point for carrying out one-dimensional scanning on the main scanning direction In adjusting position on the sub-scanning direction, and it is configured at the light of the description light beam before being incident to the polygonal rotating mirror In the optical path of the description light beam in road or from the polygonal rotating mirror to the substrate;And
2nd adjustment member of photo electric, be in order to on the main scanning direction carry out one-dimensional scanning the luminous point in Position is adjusted on the sub-scanning direction, and is configured at the optical path of the description light beam before being incident to the polygonal rotating mirror In and the optical path nearby of the 1st adjustment member in.
16. pattern plotter device according to claim 15, wherein
1st adjustment member is the description light beam for making to be incident to the reflecting surface of the polygonal rotating mirror by Mechanical Driven Position on the reflecting surface of the polygonal rotating mirror in the tiltable of side's upward displacement corresponding with the sub-scanning direction The parallel flat of permeability.
17. pattern plotter device according to claim 16, and then have and generate the light supply apparatus for describing light beam, And
2nd adjustment member is set between the light supply apparatus and the 1st adjustment member, by electrical physical property control System makes to be incident to the position of the description light beam of the reflecting surface of the polygonal rotating mirror in the reflecting surface of the polygonal rotating mirror On in the photoelectricity phase shifter of side's upward displacement corresponding with the sub-scanning direction.
18. pattern plotter device according to claim 17, wherein
Photoelectricity phase shifter is the acousto-optic modulation that deflection angle can be adjusted according to the frequency of the RF power applied as driving signal Element or audio-optical deflection element.
19. pattern plotter device described in any one of 6 to 18 according to claim 1, and then have utilization with specific It is spaced the beam expander of 2 lens systems of configuration, the description light beam of the reflecting surface of the polygonal rotating mirror will be incident to Direction corresponding with the main scanning direction beam diameter expand, and
The parallel flat as the 1st adjustment member is set between 2 lens systems.
CN201780061213.7A 2016-10-04 2017-05-15 Pattern drawing device and pattern drawing method Active CN109791371B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110922904.XA CN113552778B (en) 2016-10-04 2017-05-15 Pattern drawing apparatus and pattern drawing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-196797 2016-10-04
JP2016196797 2016-10-04
PCT/JP2017/018139 WO2018066159A1 (en) 2016-10-04 2017-05-15 Pattern drawing device and pattern drawing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110922904.XA Division CN113552778B (en) 2016-10-04 2017-05-15 Pattern drawing apparatus and pattern drawing method

Publications (2)

Publication Number Publication Date
CN109791371A true CN109791371A (en) 2019-05-21
CN109791371B CN109791371B (en) 2021-08-06

Family

ID=61830834

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110922904.XA Active CN113552778B (en) 2016-10-04 2017-05-15 Pattern drawing apparatus and pattern drawing method
CN201780061213.7A Active CN109791371B (en) 2016-10-04 2017-05-15 Pattern drawing device and pattern drawing method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202110922904.XA Active CN113552778B (en) 2016-10-04 2017-05-15 Pattern drawing apparatus and pattern drawing method

Country Status (5)

Country Link
JP (1) JP6919660B2 (en)
KR (1) KR102414046B1 (en)
CN (2) CN113552778B (en)
TW (1) TWI736621B (en)
WO (1) WO2018066159A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022092320A1 (en) * 2020-11-02 2022-05-05

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152218A1 (en) * 2014-04-01 2015-10-08 株式会社ニコン Substrate-processing apparatus, device manufacturing method, and substrate processing method
WO2015166910A1 (en) * 2014-04-28 2015-11-05 株式会社ニコン Pattern drawing device, pattern drawing method, device manufacturing method, laser light source device, beam scanning device, and beam scanning method
JP2016133623A (en) * 2015-01-19 2016-07-25 株式会社ニコン Substrate processing apparatus, and device production method
WO2016152758A1 (en) * 2015-03-20 2016-09-29 株式会社ニコン Beam scanning device, beam scanning method, and rendering device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01237513A (en) * 1987-05-13 1989-09-22 Dainippon Screen Mfg Co Ltd Method and device for light beam deflecting scan
JPH052152A (en) * 1990-12-19 1993-01-08 Hitachi Ltd Method and device for light beam generation, method for size measurement, outward shape inspection, height measurement, and exposure using same, and manufacture of semiconductor integrated circuit device
US5386221A (en) * 1992-11-02 1995-01-31 Etec Systems, Inc. Laser pattern generation apparatus
CN101405659B (en) * 2006-03-20 2011-08-10 株式会社尼康 Projecting optical system, scanning exposure device, and method of manufacturing micro device
KR101907365B1 (en) * 2012-08-28 2018-10-11 가부시키가이샤 니콘 Substrate processing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152218A1 (en) * 2014-04-01 2015-10-08 株式会社ニコン Substrate-processing apparatus, device manufacturing method, and substrate processing method
WO2015166910A1 (en) * 2014-04-28 2015-11-05 株式会社ニコン Pattern drawing device, pattern drawing method, device manufacturing method, laser light source device, beam scanning device, and beam scanning method
JP2016133623A (en) * 2015-01-19 2016-07-25 株式会社ニコン Substrate processing apparatus, and device production method
WO2016152758A1 (en) * 2015-03-20 2016-09-29 株式会社ニコン Beam scanning device, beam scanning method, and rendering device

Also Published As

Publication number Publication date
TW201826035A (en) 2018-07-16
CN113552778B (en) 2023-10-20
KR102414046B1 (en) 2022-06-29
CN113552778A (en) 2021-10-26
KR20190055243A (en) 2019-05-22
TWI736621B (en) 2021-08-21
CN109791371B (en) 2021-08-06
WO2018066159A1 (en) 2018-04-12
JP6919660B2 (en) 2021-08-18
JPWO2018066159A1 (en) 2019-07-18

Similar Documents

Publication Publication Date Title
CN106489093B (en) Pattern plotter device, pattern plotter method, device making method, laser light-source device, light-beam scanner and method
TWI701525B (en) Pattern drawing device
CN106164779B (en) Substrate board treatment
CN110031968A (en) Pattern plotter device, pattern plotter method and manufacturing method
CN107957660A (en) Pattern plotter device
CN109478018A (en) Pattern plotter device
CN109375475A (en) Substrate processing method using same and element fabricating device
CN110325922A (en) Pattern plotter device and pattern plotter method
CN109791371A (en) Pattern plotter device and pattern plotter method
JP6870755B2 (en) Pattern drawing method
JP6583451B2 (en) Pattern drawing device
JP6582782B2 (en) Pattern drawing device
JP6504293B2 (en) Pattern drawing device
JP2020013137A (en) Pattern exposure device
CN108885337A (en) Light-beam scanner and pattern plotter device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 40001179

Country of ref document: HK

GR01 Patent grant
GR01 Patent grant