CN109786345A - 石墨烯基ipm模块的先进封装结构及加工工艺 - Google Patents
石墨烯基ipm模块的先进封装结构及加工工艺 Download PDFInfo
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- CN109786345A CN109786345A CN201910188814.5A CN201910188814A CN109786345A CN 109786345 A CN109786345 A CN 109786345A CN 201910188814 A CN201910188814 A CN 201910188814A CN 109786345 A CN109786345 A CN 109786345A
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- graphene
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 131
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 238000005516 engineering process Methods 0.000 title claims abstract description 11
- 238000012545 processing Methods 0.000 title claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910052802 copper Inorganic materials 0.000 claims abstract description 113
- 239000010949 copper Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000000919 ceramic Substances 0.000 claims abstract description 63
- 229910000679 solder Inorganic materials 0.000 claims abstract description 46
- 230000003139 buffering effect Effects 0.000 claims abstract description 33
- 125000006850 spacer group Chemical group 0.000 claims abstract description 33
- 238000011084 recovery Methods 0.000 claims abstract description 29
- 239000004519 grease Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000004382 potting Methods 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 19
- 238000013461 design Methods 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- 238000001746 injection moulding Methods 0.000 claims description 4
- 230000033116 oxidation-reduction process Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims 2
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910188814.5A CN109786345B (zh) | 2019-03-13 | 2019-03-13 | 石墨烯基ipm模块的先进封装结构及加工工艺 |
Applications Claiming Priority (1)
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CN201910188814.5A CN109786345B (zh) | 2019-03-13 | 2019-03-13 | 石墨烯基ipm模块的先进封装结构及加工工艺 |
Publications (2)
Publication Number | Publication Date |
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CN109786345A true CN109786345A (zh) | 2019-05-21 |
CN109786345B CN109786345B (zh) | 2024-04-23 |
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CN201910188814.5A Active CN109786345B (zh) | 2019-03-13 | 2019-03-13 | 石墨烯基ipm模块的先进封装结构及加工工艺 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111261599A (zh) * | 2020-03-11 | 2020-06-09 | 黄山学院 | 基于石墨烯基封装衬板的大功率ipm的结构及加工工艺 |
CN112435998A (zh) * | 2020-12-15 | 2021-03-02 | 南京工业职业技术大学 | 一种GaN HEMT器件的热应力管理引擎 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007234690A (ja) * | 2006-02-28 | 2007-09-13 | Hitachi Ltd | パワー半導体モジュール |
CN102849961A (zh) * | 2011-07-01 | 2013-01-02 | 中央研究院 | 在基板上成长碳薄膜或无机材料薄膜的方法 |
US20130020694A1 (en) * | 2011-07-19 | 2013-01-24 | Zhenxian Liang | Power module packaging with double sided planar interconnection and heat exchangers |
CN103107147A (zh) * | 2012-04-06 | 2013-05-15 | 北京中石伟业科技股份有限公司 | 一种表面覆有石墨烯薄膜的散热器 |
CN106910691A (zh) * | 2017-03-07 | 2017-06-30 | 黄山学院 | 功率变流器中igbt模块的散热结构及封装工艺 |
CN107887368A (zh) * | 2017-10-13 | 2018-04-06 | 天津大学 | 采用低温烧结纳米银的双面互连硅基igbt模块的方法 |
CN209328886U (zh) * | 2019-03-13 | 2019-08-30 | 黄山宝霓二维新材科技有限公司 | 石墨烯基ipm模块的先进封装结构 |
-
2019
- 2019-03-13 CN CN201910188814.5A patent/CN109786345B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007234690A (ja) * | 2006-02-28 | 2007-09-13 | Hitachi Ltd | パワー半導体モジュール |
CN102849961A (zh) * | 2011-07-01 | 2013-01-02 | 中央研究院 | 在基板上成长碳薄膜或无机材料薄膜的方法 |
US20130020694A1 (en) * | 2011-07-19 | 2013-01-24 | Zhenxian Liang | Power module packaging with double sided planar interconnection and heat exchangers |
CN103107147A (zh) * | 2012-04-06 | 2013-05-15 | 北京中石伟业科技股份有限公司 | 一种表面覆有石墨烯薄膜的散热器 |
CN106910691A (zh) * | 2017-03-07 | 2017-06-30 | 黄山学院 | 功率变流器中igbt模块的散热结构及封装工艺 |
CN107887368A (zh) * | 2017-10-13 | 2018-04-06 | 天津大学 | 采用低温烧结纳米银的双面互连硅基igbt模块的方法 |
CN209328886U (zh) * | 2019-03-13 | 2019-08-30 | 黄山宝霓二维新材科技有限公司 | 石墨烯基ipm模块的先进封装结构 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111261599A (zh) * | 2020-03-11 | 2020-06-09 | 黄山学院 | 基于石墨烯基封装衬板的大功率ipm的结构及加工工艺 |
WO2021179352A1 (zh) * | 2020-03-11 | 2021-09-16 | 黄山学院 | 基于石墨烯基封装衬板的大功率ipm的结构及加工工艺 |
CN112435998A (zh) * | 2020-12-15 | 2021-03-02 | 南京工业职业技术大学 | 一种GaN HEMT器件的热应力管理引擎 |
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CN109786345B (zh) | 2024-04-23 |
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Address after: 245061 No. 10, Wenfeng West Road, Huizhou District, Huangshan City, Anhui Province Applicant after: Huangshan Gujie Co.,Ltd. Address before: 245061 No. 10, Wenfeng West Road, Huizhou District, Huangshan City, Anhui Province Applicant before: GOOGE THERMAL COOLING TECHNOLOGY CO.,LTD. |
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