CN109781149A - A kind of AMR sensor structure and its manufacturing method - Google Patents
A kind of AMR sensor structure and its manufacturing method Download PDFInfo
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- CN109781149A CN109781149A CN201811594061.XA CN201811594061A CN109781149A CN 109781149 A CN109781149 A CN 109781149A CN 201811594061 A CN201811594061 A CN 201811594061A CN 109781149 A CN109781149 A CN 109781149A
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Abstract
A kind of AMR sensor structure and its manufacturing method, a kind of AMR sensor structure, including the first conductive material, the second conductive material and magnetoresistive strip；Including providing a Si substrate, and Si substrate is pre-processed；The first predefined figure is formed on the substrate using photoetching, lift-off technology；Magnetic strip is grown using Magnetron Sputtering Thin Film growing technology, the applied bias magnetic field when growing magnetoresistive strip introduces additional magnetic anisotropy energy；It is cleaned by ultrasonic using acetone, removes extra thin magnetic film；The second predefined figure is formed on the substrate using photoetching, lift-off technology；Wheatstone bridge is grown using Magnetron Sputtering Thin Film growing technology；It is cleaned by ultrasonic using acetone, removes extra conductive metal film.Magnetoresistive strip work area is increased, the influence of babe electrode edge electric current is avoided, reduces requirement of the process to precision.
Description
Technical field
The invention belongs to sensor technical field, in particular to a kind of AMR sensor structure and its manufacturing method.
Background technique
In the design and manufacture of traditional AMR sensor, in order to realize current direction and magnetic induction intensity angular separation at
45 °, better linear response is obtained, generallys use the design method of babe electrode.In magnetoresistive strip surface growth parallel interval row
The metal electrode of column, metal electrode and rectangle magnetoresistive strip longitudinal direction are at 45 °.The design method of babe electrode is scarce there are two
It falls into, will greatly affect AMR sensor performance.First, the magnetoresistive film short circuit of metal layer bottom is reduced magnetic by babe electrode
The actually active work area of item is hindered, magneto-resistance effect is reduced；Second, since babe electrode is in marginal portion current distribution is uneven
It is even, it causes actual current direction and magnetizes the angle of axis direction to shift, influence linear sensor output area and sensitive
Degree.
Summary of the invention
The purpose of the present invention is to provide a kind of AMR sensor structure and its manufacturing methods, to solve the above problems.
To achieve the above object, the invention adopts the following technical scheme:
A kind of AMR sensor structure, including the first conductive material, the second conductive material and magnetoresistive strip；Four first conductive
Material is distributed at four palace trellis, the parallel spaced set of several magnetoresistive strips, and the end between two adjacent magnetoresistive strips passes through the
The connection of two conductive materials, makes several magnetoresistive strips form S type cascaded structure；S type is provided between the first adjacent conductive material
Cascaded structure, forms Wheatstone bridge, and the magnetoresistive strip of S type cascaded structure end is connect with the first conductive material.
Further, the middle line of the uniform four palaces lattice of each S type cascaded structure is in angle of 45 degrees；First conductive material and second
Conductive material is conductive metal.
Further, magnetoresistive strip with a thickness of 30nm-100nm；Magnetoresistive strip is sandwich structure, including bottom buffer layer,
Middle layer and upper layer protective layer；Bottom cushioning layer material is Ta, and with a thickness of 3nm, middle layer is NiFe, thickness using magnetic material
For 30nm, upper layer protective layer material is Ta, with a thickness of 3nm.
A kind of manufacturing method of AMR sensor structure, based on a kind of AMR sensor structure described in above-mentioned any one,
The following steps are included:
Step 1, a Si substrate is provided, and Si substrate is pre-processed；
Step 2, the first predefined figure is formed on the substrate using photoetching, lift-off technology；
Step 3, magnetic strip, the applied bias magnetic when growing magnetoresistive strip are grown using Magnetron Sputtering Thin Film growing technology
, introduce additional magnetic anisotropy energy；It is cleaned by ultrasonic using acetone, removes extra thin magnetic film；
Step 4, the second predefined figure is formed on the substrate using photoetching, lift-off technology；
Step 5, Wheatstone bridge is grown using Magnetron Sputtering Thin Film growing technology；It is cleaned by ultrasonic using acetone, is removed more
Remaining conductive metal film.
Further, in step 1, Si substrate carries out pretreatment as ultrasound is clear respectively using acetone, alcohol and deionized water
5min is washed, uses N later2Drying keeps 115 DEG C of baking 20min in baking oven.
Further, in step 3, external bias magnetic field, magnetic direction and magnetoresistive strip long axis direction angle are at 45 °.
Further, forming the first predefined figure includes: spin coating covering photoresist the first photoetching of formation in Si substrate
Glue-line；Ultraviolet exposure is carried out to the first photoresist layer by the mask plate of the first predefined figure；Using developer solution to exposure
The first photoresist layer afterwards carries out development treatment；Using on the first photoresist layer of Magnetron Sputtering Thin Film growing technology after development
Grow magnetic material layer；The first photoresist layer is removed, the first predefined figure is formed.
Further, after photoresist being added dropwise in Si substrate, light is first made with 600 rotational speed rates rotation 10s on sol evenning machine
Photoresist covers Si piece, then makes photoresist thickness uniform with 4000 rotational speed rates rotation 40s；The Si substrate of spin coating photoresist is put into
In baking oven, with 115 DEG C of heating 20min, so that photoresist is fully cured.
Further, in step 4, forming the second predefined figure includes: to be deposited with the first predefined figure magnetism material
Spin coating covering photoresist forms the second photoresist layer in the Si substrate of the bed of material；By the mask plate of the second predefined figure to second
Photoresist layer carries out ultraviolet exposure；Development treatment is carried out to the second photoresist layer after exposure using developer solution；Utilize magnetic control
Metallic conducting material is grown on the second photoresist layer of sputtered film growing technology after development；The second photoresist layer is removed,
Form the second predefined figure.
Further, after photoresist being added dropwise in the Si substrate that growth has magnetoresistive strip, first with 600 rotational speed rates on sol evenning machine
Rotation 10s makes photoresist overlay Si piece, then makes photoresist thickness uniform with 4000 rotational speed rates rotation 40s；By spin coating photoetching
The Si substrate of glue is put into baking oven, with 115 DEG C of heating 20min, so that photoresist is fully cured.
Compared with prior art, the present invention has following technical effect:
Invention removes magnetoresistive strip surface babe electrode layers, increase magnetoresistive strip work area, avoid babe electrode
The influence of edge current reduces requirement of the process to precision.Bigger magnetic reluctance can be obtained, while biography can be improved
The sensitivity of sensor improves the working efficiency and application range of device.
Detailed description of the invention
Fig. 1 illustrates AMR sensor structure.
Fig. 2 illustrates the manufacturing process of AMR sensor.
In figure: the first conductive material of 1-, the second conductive material of 2-, 3- magnetoresistive strip.
Specific embodiment
Below in conjunction with attached drawing, the present invention is further described:
A kind of AMR sensor structure, including the first conductive material 1, the second conductive material 2 and magnetoresistive strip 3；Four first are led
Electric material 1 is distributed at four palace trellis, the parallel spaced set of several magnetoresistive strips 3, and the end between two adjacent magnetoresistive strips 3 is logical
The connection of the second conductive material 2 is crossed, several magnetoresistive strips 3 is made to form S type cascaded structure；It is all provided between the first adjacent conductive material 1
It is equipped with S type cascaded structure, forms Wheatstone bridge, the magnetoresistive strip 3 of S type cascaded structure end is connect with the first conductive material 1.
The middle line of each uniform four palaces lattice of S type cascaded structure is in angle of 45 degrees；First conductive material 1 and the second conductive material
2 be conductive metal.
Magnetoresistive strip 3 with a thickness of 30nm-100nm；Magnetoresistive strip 3 be sandwich structure, including bottom buffer layer, middle layer and
Upper layer protective layer；Bottom cushioning layer material is Ta, and with a thickness of 3nm, middle layer is NiFe using magnetic material, with a thickness of 30nm,
Upper layer protective layer material is Ta, with a thickness of 3nm.
A kind of manufacturing method of AMR sensor structure:
Step 1, a Si substrate is provided, is cleaned by ultrasonic 5min respectively using acetone, alcohol and deionized water, uses N2 later
Drying keeps 115 DEG C of baking 20min in baking oven.
Step 2, the present invention uses the model APR-3510P of photoresist, after photoresist is added dropwise in Si substrate, in spin coating
Photoresist overlay Si piece is first made with 600 rotational speed rates rotation 10s on machine, then makes photoresist thick with 4000 rotational speed rates rotation 40s
Degree is uniform.
Step 3, the Si substrate of spin coating photoresist is put into baking oven, with 115 DEG C of heating 20min, so that photoresist is complete
Solidification.
Step 4, ultraviolet exposure is carried out to the first photoresist layer by the mask plate of the first predefined figure.
Step 5, develop, remove extra photoresist, the first predefined figure is left in Si substrate.
Step 6, using Magnetron Sputtering Thin Film growing technology, magnetoresistive film layer, told magnetic are grown in the substrate handled well
Resistance thin film layer thickness is 30-100nm, and told magnetoresistance material includes Ta and NiFe.In thin film growth process, Si substrate is added
External bias magnetic field 3,3 direction of bias magnetic field and 2 angle of magnetoresistive strip are at 45 °, as shown in Figure 1,3 direction of bias magnetic field is horizontal horizontal
To.NiFe film thickness can change herein, while be also possible to other magnetic materials, and the quantity and size of magnetoresistive strip 2 can also
To change.
Step 7, the first layer photoresist is removed.
Step 8, after photoresist being added dropwise in the Si substrate that growth has magnetoresistive strip 2, first with the rotation of 600 rotational speed rates on sol evenning machine
Turn 10s and make photoresist overlay Si piece, then makes photoresist thickness uniform with 4000 rotational speed rates rotation 40s.
Step 9, the Si substrate of spin coating photoresist is put into baking oven, with 115 DEG C of heating 20min, so that photoresist is complete
Solidification.
Step 10, ultraviolet exposure is carried out to the second photoresist layer by the mask plate of the second predefined figure.
Step 11, develop, remove extra photoresist, the second predefined figure is left in Si substrate.
Step 12, using Magnetron Sputtering Thin Film growing technology, conductive metal 1, conductive gold are grown in the substrate handled well
Belong to 1 and forms Wheatstone bridge with magnetoresistive strip 2.
Step 13, the second layer photoresist is removed.
Claims (10)
1. a kind of AMR sensor structure, which is characterized in that including the first conductive material (1), the second conductive material (2) and magnetic resistance
Item (3)；Four the first conductive materials (1) are distributed at four palace trellis, the parallel spaced set of several magnetoresistive strips (3), and adjacent two
End between a magnetoresistive strip (3) is connected by the second conductive material (2), and several magnetoresistive strips (3) is made to form S type cascaded structure；
It is provided with S type cascaded structure between adjacent the first conductive material (1), forms Wheatstone bridge, S type cascaded structure end
Magnetoresistive strip (3) is connect with the first conductive material (1).
2. a kind of AMR sensor structure according to claim 1, which is characterized in that each uniform four palace of S type cascaded structure
The middle line of lattice is in angle of 45 degrees；First conductive material (1) and the second conductive material (2) are conductive metal.
3. a kind of AMR sensor structure according to claim 1, which is characterized in that magnetoresistive strip (3) with a thickness of 30nm-
100nm；Magnetoresistive strip (3) is sandwich structure, including bottom buffer layer, middle layer and upper layer protective layer；Bottom cushioning layer material
For Ta, with a thickness of 3nm, middle layer is NiFe using magnetic material, and with a thickness of 30nm, upper layer protective layer material is Ta, with a thickness of
3nm。
4. a kind of manufacturing method of AMR sensor structure, which is characterized in that based on one described in claims 1 to 3 any one
Kind AMR sensor structure, comprising the following steps:
Step 1, a Si substrate is provided, and Si substrate is pre-processed；
Step 2, the first predefined figure is formed on the substrate using photoetching, lift-off technology；
Step 3, magnetic strip is grown using Magnetron Sputtering Thin Film growing technology, the applied bias magnetic field when growing magnetoresistive strip is drawn
Enter additional magnetic anisotropy energy；It is cleaned by ultrasonic using acetone, removes extra thin magnetic film；
Step 4, the second predefined figure is formed on the substrate using photoetching, lift-off technology；
Step 5, Wheatstone bridge is grown using Magnetron Sputtering Thin Film growing technology；It is cleaned by ultrasonic using acetone, it is extra to remove
Conductive metal film.
5. a kind of manufacturing method of AMR sensor structure according to claim 4, which is characterized in that in step 1, Si base
Bottom carries out pretreatment to be cleaned by ultrasonic 5min respectively using acetone, alcohol and deionized water, uses N later2Drying, is protected in baking oven
Hold 115 DEG C of baking 20min.
6. a kind of manufacturing method of AMR sensor structure according to claim 4, which is characterized in that external in step 3
Bias magnetic field, magnetic direction and magnetoresistive strip long axis direction angle are at 45 °.
7. a kind of manufacturing method of AMR sensor structure according to claim 4, which is characterized in that in step 2, formed
First predefined figure includes: spin coating covering photoresist the first photoresist layer of formation in Si substrate；By the first predefined figure
The mask plate of shape carries out ultraviolet exposure to the first photoresist layer；The first photoresist layer after exposure is shown using developer solution
Shadow processing；Using growing magnetic material layer on the first photoresist layer of Magnetron Sputtering Thin Film growing technology after development；Removal the
One photoresist layer forms the first predefined figure.
8. a kind of manufacturing method of AMR sensor structure according to claim 7, which is characterized in that dripped in Si substrate
After adding photoresist, photoresist overlay Si piece is first made with 600 rotational speed rates rotation 10s on sol evenning machine, then with the rotation of 4000 rotational speed rates
Turning 40s makes photoresist thickness uniform；The Si substrate of spin coating photoresist is put into baking oven, with 115 DEG C of heating 20min, so that
Photoresist is fully cured.
9. a kind of manufacturing method of AMR sensor structure according to claim 4, which is characterized in that in step 4, formed
Second predefined figure includes: the spin coating covering photoresist shape in the Si substrate for being deposited with the first predefined figure magnetic material layer
At the second photoresist layer；Ultraviolet exposure is carried out to the second photoresist layer by the mask plate of the second predefined figure；Using aobvious
Shadow liquid carries out development treatment to the second photoresist layer after exposure；Using Magnetron Sputtering Thin Film growing technology after development second
Metallic conducting material is grown on photoresist layer；The second photoresist layer is removed, the second predefined figure is formed.
10. a kind of manufacturing method of AMR sensor structure according to claim 9, which is characterized in that have magnetic resistance in growth
After photoresist is added dropwise in the Si substrate of item, photoresist overlay Si piece is first made with 600 rotational speed rates rotation 10s on sol evenning machine, then
Make photoresist thickness uniform with 4000 rotational speed rates rotation 40s；The Si substrate of spin coating photoresist is put into baking oven, with 115 DEG C
20min is heated, so that photoresist is fully cured.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110531286A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference |
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Application publication date: 20190521 |