CN109768029A - A kind of on-chip spiral inductor based on vertical graphene interconnection structure - Google Patents
A kind of on-chip spiral inductor based on vertical graphene interconnection structure Download PDFInfo
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- CN109768029A CN109768029A CN201811466579.5A CN201811466579A CN109768029A CN 109768029 A CN109768029 A CN 109768029A CN 201811466579 A CN201811466579 A CN 201811466579A CN 109768029 A CN109768029 A CN 109768029A
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Abstract
The invention discloses a kind of on-chip spiral inductors based on vertical graphene interconnection structure.Single-layer graphene interconnection power consumption is obvious, and multiple-layer horizontal graphene is in the poor thermal conductivity of vertical direction.The present invention includes substrate, the second metal layer positioned at base top, the first metal layer at the top of second metal layer, first through hole transmission channel, the second through-hole transmission channel and on the first metal layer and is wound in ten six roots of sensation graphene interconnection lines of four circles.The present invention compares the interconnection of single-layer graphene, and multilayer vertical graphene embodies advantage when being interconnected in larger width；Compare copper-connection, reduces signal propagation delay time in integrated circuit, reduces power consumption；And interconnected compared to more horizontal graphene, because graphene characteristic is each incorgruous, effective solution is can be obtained in the heat conduction problem of vertical direction, using most important in being similar to three dimensional integrated circuits new technique.
Description
Technical field
The invention belongs to technical field of electronic devices, and in particular to a kind of on piece spiral shell based on vertical graphene interconnection structure
Revolve inductance component.
Background technique
More and more inductance elements are embedded on current integrated circuit, in the prior art generally using on-chip spiral electricity
Feel structure, i.e., by turning to inductance coil by metal wire, and is drawn internal port from metal layer by through-hole transmission channel
Out.It is generally necessary to increase number of coils to obtain higher value of inductance.On-chip spiral inductor structure generally has that area is small, power consumption
Feature low, easy of integration.
In recent years, graphene is as emerging interconnection material since its outstanding physical characteristic has received widespread attention.
Compared with traditional copper-connection, single-layer graphene can provide smaller dead resistance when being interconnected in lower line width, system is steady
Qualitative increase is interconnected compared to multiple-layer horizontal graphene, then its power consumption obviously increases.However multiple-layer horizontal graphene is due to top electricity
The incomplete contact between of pole, electric conductivity are haveed the defects that certain, and the thermal conductivity of vertical direction is poor.
Dynamic inductance refers to using the performance of the inertia mass of the mobile charge carrier in alternately electromotive force as a kind of equivalent
Interconnection inductance is resistant to the characteristic of carrier inertial change, has huge facilitation to the flowing of electric current, is only dependent upon dynamic
Measure the conductive channel in relaxation and material.Graphene causes it to have than conventional metals more because of its unique physical structure
Big relaxation time and smaller conducting channel number, possess more significant dynamic inductance characteristic.Again since dynamic inductance does not depend on
The area of inductor and not mutual dynamic inductance, therefore using the dynamic inductance characteristic of graphene improve current density, subtract
Small area, optimization integrated circuit layout, it will an important trend of the scaling development as on-chip inductor.
Summary of the invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide a kind of on pieces based on vertical graphene interconnection structure
Spiral inductance, specially four circle spiral graphene inductors, are made inductance element by vertical graphene, are utilized relatively large
Electrokinetic energy inductance and high conductivity material, to realize small shape and high inductance value；Graphene is interconnected in top layer metallic layer realization, and
Centre cap and driving source are realized in low one layer of metal layer, in addition, metal electrode is used as the contact of graphene interconnection, maximum journey
Degree ground improves mutual inductance value, to obtain the induction structure of high inductance.
The present invention includes substrate, the first metal positioned at the second metal layer of base top, at the top of second metal layer
Layer, first through hole transmission channel, the second through-hole transmission channel and on the first metal layer and it is wound in ten six roots of sensation stones of four circles
Black alkene interconnection line；One end of the first graphene interconnection line is connect with second graphene interconnection line one end by metal electrode,
The other end is located at the first metal layer one end with first through hole transmission channel and connect, the other end position of the first through hole transmission channel
In second metal layer；The second graphene interconnection line other end is connect with third graphene interconnection line one end by metal electrode；The
The three graphene interconnection line other ends are connect with the 4th graphene interconnection line one end by metal electrode；First graphene is mutual
Line, the second graphene interconnection line, third graphene interconnection line and the 4th graphene interconnection line form the first circle of most outer ring；The
The four graphene interconnection line other ends are connect with the 5th graphene interconnection line one end by metal electrode；5th graphene interconnection line is another
One end is connect with the 6th graphene interconnection line one end by metal electrode；The 6th graphene interconnection line other end and the 7th graphene
Interconnection line one end is connected by metal electrode；The 7th graphene interconnection line other end and the 8th graphene interconnection line one end pass through gold
Belong to electrode connection；5th graphene interconnection line, the 6th graphene interconnection line, the 7th graphene interconnection line and the 8th graphite
Alkene interconnection line is formed close to the second circle of most outer ring；The 8th graphene interconnection line other end and the 9th graphene interconnection line one end are logical
Cross metal electrode connection；The 9th graphene interconnection line other end is connect with the tenth graphene interconnection line one end by metal electrode；
The tenth graphene interconnection line other end is connect with the 11st graphene interconnection line one end by metal electrode；11st graphene is mutual
The line other end is connect with the 12nd graphene interconnection line one end by metal electrode；The 9th graphene interconnection line,
Ten graphene interconnection lines, the 11st graphene interconnection line and the 12nd graphene interconnection line are formed close to the third circle of innermost ring；
The 12nd graphene interconnection line other end is connect with the 13rd graphene interconnection line one end by metal electrode；13rd graphene
The interconnection line other end is connect with the 14th graphene interconnection line one end by metal electrode；The 14th graphene interconnection line other end
It is connect with the 15th graphene interconnection line one end by metal electrode；The 15th graphene interconnection line other end and the 16th graphite
Alkene interconnection line one end is connected by metal electrode；The 13rd graphene interconnection line, the 14th graphene interconnection line, the tenth
Five graphene interconnection lines and the 16th graphene interconnection line form the 4th circle of innermost ring；The 16th graphene interconnection line other end
It is located at the first metal layer one end with the second through-hole transmission channel to connect, the second through-hole transmission channel other end is located at the second metal
Layer.
The growth course of vertical graphene layer is as follows in the vertical graphene interconnection line of described each:
Step 1 forms the Co catalysts layer of 4nm thickness with chemical vapour deposition technique on titanium protective layer.
Step 2 grows two layers of horizontal graphene layer with chemical vapour deposition technique on Co catalysts layer.
Step 3 is grown between the horizontal graphene layer of bottom and Co catalysts layer equidistant with chemical vapour deposition technique
The vertical graphene layer of the multilayer of setting.
Step 4 removes two layers of horizontal graphene layer by argon plasma etch.
Step 5 removes the vertical graphene layer in part, thus in all vertical graphenes with deep reactive ion etch technology
Equidistant arrangement and identical four gaps of size are formed between layer.
Step 6 surrounds dielectric layer after step 5 is handled with chemical vapor deposition dielectric layer
All vertical graphene layers and four gaps.
The process of two layers of horizontal graphene layer is grown in step 2 specifically: grow bottom on Co catalysts layer first
Then horizontal graphene layer grows the horizontal graphene layer of top layer on the horizontal graphene layer of bottom.
Chemical vapour deposition technique in step 2, uses the mixture of acetylene and argon as source gas, and air pressure 1kPa is raw
The environment temperature of long horizontal graphene layer is 45 DEG C, and growth time is 30 minutes.
In the argon plasma etch, the pressure of argon gas is 0.5Pa, power 400W.
The invention has the advantages that:
Present invention utilizes vertical graphene interconnection structures to construct on-chip spiral inductor element, and compare traditional inductance,
Inductance density is improved, area is reduced, enhances overall inductance value.Wherein, compared to the interconnection of single-layer graphene, multilayer is vertical
Graphene embodies advantage when being interconnected in larger width；Compare copper-connection, reduces signal propagation delay time in integrated circuit,
Reduce power consumption；And interconnected compared to more horizontal graphene, the thermal conductivity in vertical direction is enhanced, performance is improved.
Detailed description of the invention
Fig. 1 is the structure chart of multiple-layer horizontal graphene；
Fig. 2 is the structure chart of the vertical graphene of multilayer in the present invention；
Fig. 3 A is the structure chart that Co catalysts layer is formed on titanium protective layer；
Fig. 3 B is the structure chart on the Co catalysts layer of Fig. 3 A after level of growth graphene layer；
Structure chart under the horizontal graphene layer that Fig. 3 C is Fig. 3 B after growth of vertical graphene；
Fig. 3 D is that Fig. 3 C removes the structure chart after horizontal graphene；
Fig. 3 E is the structure chart after the vertical graphene layer in Fig. 3 D removal part；
Fig. 3 F is the structure chart after Fig. 3 E deposit dielectric layer；
Fig. 4 is the structural schematic diagram of on-chip spiral inductor of the present invention；
Transmission of the Fig. 5 between on-chip spiral inductor of the present invention and the on-chip spiral inductor of horizontal graphene interconnection structure is bent
Line simulation comparison figure.
Specific embodiment
Below in conjunction with drawings and examples, the invention will be further described.
Fig. 1 is multiple-layer horizontal graphene interconnection structure schematic diagram, including contact resistance Rc and multiple horizontal graphenes
Layer.Due to the different manufacturing process of material, there is certain variation ranges for the value of contact resistance.This water as can be seen from Fig. 1
Flat graphene interconnection can provide better reliability and stability compared to more traditional copper-connection, but due in Vertical Square
Upward low heat conductivity, there are some problems for thermal diffusivity.
Fig. 2 is the vertical graphene interconnection structure schematic diagram of multilayer, including contact resistance and multiple vertical graphene layers.
This vertical graphene interconnection structure will greatly increase the rate of heat dissipation as can be seen from Fig. 2, while also ensure reliable
Property and stability.
The growth course of vertical graphene layer is as follows in vertical graphene interconnection structure:
Step 1 forms the Co catalysts of 4nm thickness with chemical vapour deposition technique as shown in Figure 3A on titanium protective layer
Layer.
Step 2 grows two layers of horizontal graphene with chemical vapour deposition technique as shown in Figure 3B on Co catalysts layer
Layer, specifically: the horizontal graphene layer of bottom is grown on Co catalysts layer first, it is then raw on the horizontal graphene layer of bottom
Grow the horizontal graphene layer of top layer.
Step 3, as shown in Figure 3 C, with chemical vapour deposition technique between the horizontal graphene layer of bottom and Co catalysts layer
Grow the vertical graphene layer that multilayer spacing is δ.
Step 4 removes two layers of horizontal graphene layer by argon plasma etch as shown in Figure 3D.
Step 5 with deep reactive ion etch technology, removes the vertical graphene layer in part, thus in institute as shown in FIGURE 3 E
Have and forms equidistant arrangement and identical four gaps of size between vertical graphene layer.
Step 6 with chemical vapor deposition dielectric layer, surrounds dielectric layer through step as illustrated in Figure 3 F
Rapid five treated all vertical graphene layers and four gaps.
Chemical vapour deposition technique in step 2, uses the mixture of acetylene and argon as source gas, and air pressure 1kPa is raw
The environment temperature of long horizontal graphene layer is 45 DEG C, and growth time is 30 minutes.
In argon plasma etch, the pressure of argon gas is 0.5Pa, power 400W.
Fig. 4 is the structure chart of on-chip spiral inductor of the present invention.Wherein, left end is input port driving source, and right end is output
Port center tap.On-chip spiral inductor of the present invention, including substrate, positioned at base top second metal layer, be located at the second gold medal
Belong to the first metal layer at the top of layer, first through hole transmission channel, the second through-hole transmission channel and on the first metal layer and twines
It is coiled into ten six roots of sensation graphene interconnection lines of four circles；First graphene interconnection line, 101 one end and 102 one end of the second graphene interconnection line
It is connected by metal electrode, 102 other end of the second graphene interconnection line and 103 one end of third graphene interconnection line pass through metal electricity
Pole connection；103 other end of third graphene interconnection line is connect with 104 one end of the 4th graphene interconnection line by metal electrode；The
One graphene interconnection line 101, the second graphene interconnection line 102, third graphene interconnection line 103 and the 4th graphene interconnection line
104 form the first circle of most outer ring；4th graphene interconnection line, 104 other end passes through with 105 one end of the 5th graphene interconnection line
Metal electrode connection；5th graphene interconnection line, 105 other end and 106 one end of the 6th graphene interconnection line are connected by metal electrode
It connects；6th graphene interconnection line, 106 other end is connect with 107 one end of the 7th graphene interconnection line by metal electrode；7th stone
Black 107 other end of alkene interconnection line is connect with 108 one end of the 8th graphene interconnection line by metal electrode；5th graphene interconnection line
105, the 6th graphene interconnection line 106, the 7th graphene interconnection line 107 and the 8th graphene interconnection line 108 are formed close to outermost
Second circle of ring；8th graphene interconnection line, 108 other end and 109 one end of the 9th graphene interconnection line are connected by metal electrode
It connects；9th graphene interconnection line, 109 other end is connect with 110 one end of the tenth graphene interconnection line by metal electrode；Tenth stone
Black 110 other end of alkene interconnection line is connect with 111 one end of the 11st graphene interconnection line by metal electrode；11st graphene is mutual
111 other end of line is connect with 112 one end of the 12nd graphene interconnection line by metal electrode；9th graphene interconnection line 109,
Tenth graphene interconnection line 110, the 11st graphene interconnection line 111 and the 12nd graphene interconnection line 112 are formed close to most interior
The third circle of ring；12nd graphene interconnection line, 112 other end and 113 one end of the 13rd graphene interconnection line pass through metal electrode
Connection；13rd graphene interconnection line, 113 other end is connect with 114 one end of the 14th graphene interconnection line by metal electrode；
14th graphene interconnection line, 114 other end is connect with 115 one end of the 15th graphene interconnection line by metal electrode；15th
115 other end of graphene interconnection line is connect with 116 one end of the 16th graphene interconnection line by metal electrode；13rd graphene
Interconnection line 113, the 14th graphene interconnection line 114, the 15th graphene interconnection line 115 and the 16th graphene interconnection line 116
Form the 4th circle of innermost ring；First graphene interconnection line, 101 other end and first through hole transmission channel are located at the first metal layer
One end connection, first through hole transmission channel are located at second metal layer one end and connect with the driving source for being located at second metal layer；Tenth
Six graphene interconnection lines, 116 other end is located at the first metal layer one end with the second through-hole transmission channel and connect, the transmission of the second through-hole
Channel is located at second metal layer one end and connect with the centre cap for being located at second metal layer.
The course of work of on-chip spiral inductor of the present invention: electric current passes through first through hole from the driving source of second metal layer first
Transmission channel flows to the first metal layer, and then successively the first graphene interconnection line 101, the second graphene through the first metal layer are mutual
Line 102, third graphene interconnection line 103, the 4th graphene interconnection line 104, the 5th graphene interconnection line 105, the 6th graphite
Alkene interconnection line 106, the 7th graphene interconnection line 107, the 8th graphene interconnection line 108, the 9th graphene interconnection line the 109, the tenth
Graphene interconnection line 110, the 11st graphene interconnection line 111, the 12nd graphene interconnection line 112, the interconnection of the 13rd graphene
Lead to after line 113, the 14th graphene interconnection line 114, the 15th graphene interconnection line 115 and the 16th graphene interconnection line 116
It crosses the second through-hole transmission channel and flows to second metal layer again, most flowed out afterwards through centre cap.Each graphene interconnection in the present invention
Line is wound repeatedly with swelling current path, can provide biggish dynamic inductance value using vertical graphene spiral inductance structure, simultaneously
It reduces the power consumption of circuit, improve rate of heat dispation, to reach optimization circuit performance purpose.
Fig. 5 be using Matlab simulation software obtain the present invention is based on the on-chip spiral of vertical graphene interconnection structure electricity
Transmission curve simulation comparison figure between sense and the on-chip spiral inductor of horizontal graphene interconnection structure, VGNR represent vertical graphite
Alkene, HGNR represent horizontal graphene, and W represents the width of interconnection line, EFRepresent fermi level.As it can be seen that comparing more horizontal graphene
For interconnection, the present invention realizes the reduction of power consumption very well, improves the performance of thermal diffusivity and device, increases the stabilization of system
Property.
Claims (5)
1. a kind of on-chip spiral inductor based on vertical graphene interconnection structure, including substrate, positioned at the second gold medal of base top
Belong to layer, the first metal layer at the top of second metal layer, first through hole transmission channel, the second through-hole transmission channel and is located at the
Graphene interconnection line on one metal layer, it is characterised in that: the graphene interconnection line has ten six roots of sensation and is wound in four circles；Institute
The one end for stating the first graphene interconnection line is connect with second graphene interconnection line one end by metal electrode, and the other end and first leads to
Hole transmission channel is located at the connection of the first metal layer one end, and the other end of the first through hole transmission channel is located at second metal layer；
The second graphene interconnection line other end is connect with third graphene interconnection line one end by metal electrode；Third graphene interconnection line
The other end is connect with the 4th graphene interconnection line one end by metal electrode；The first graphene interconnection line, the second graphite
Alkene interconnection line, third graphene interconnection line and the 4th graphene interconnection line form the first circle of most outer ring；The interconnection of 4th graphene
The line other end is connect with the 5th graphene interconnection line one end by metal electrode；The 5th graphene interconnection line other end and the 6th stone
Black alkene interconnection line one end is connected by metal electrode；The 6th graphene interconnection line other end and the 7th graphene interconnection line one end are logical
Cross metal electrode connection；The 7th graphene interconnection line other end is connect with the 8th graphene interconnection line one end by metal electrode；
5th graphene interconnection line, the 6th graphene interconnection line, the 7th graphene interconnection line and the 8th graphene interconnects linear
At the second circle close to most outer ring；The 8th graphene interconnection line other end and the 9th graphene interconnection line one end pass through metal electrode
Connection；The 9th graphene interconnection line other end is connect with the tenth graphene interconnection line one end by metal electrode；Tenth graphene
The interconnection line other end is connect with the 11st graphene interconnection line one end by metal electrode；The 11st graphene interconnection line other end
It is connect with the 12nd graphene interconnection line one end by metal electrode；The 9th graphene interconnection line, the tenth graphene are mutual
Line, the 11st graphene interconnection line and the 12nd graphene interconnection line are formed close to the third circle of innermost ring；12nd graphite
The alkene interconnection line other end is connect with the 13rd graphene interconnection line one end by metal electrode；13rd graphene interconnection line is another
End is connect with the 14th graphene interconnection line one end by metal electrode；The 14th graphene interconnection line other end and the 15th stone
Black alkene interconnection line one end is connected by metal electrode；The 15th graphene interconnection line other end and the 16th graphene interconnection line one
End is connected by metal electrode；The 13rd graphene interconnection line, the 14th graphene interconnection line, the 15th graphene are mutual
Line and the 16th graphene interconnection line form the 4th circle of innermost ring；The 16th graphene interconnection line other end and the second through-hole
Transmission channel is located at the connection of the first metal layer one end, and the second through-hole transmission channel other end is located at second metal layer.
2. a kind of on-chip spiral inductor based on vertical graphene interconnection structure according to claim 1, it is characterised in that: institute
The growth course of vertical graphene layer is as follows in the vertical graphene interconnection line of each stated:
Step 1 forms the Co catalysts layer of 4nm thickness with chemical vapour deposition technique on titanium protective layer；
Step 2 grows two layers of horizontal graphene layer with chemical vapour deposition technique on Co catalysts layer；
Step 3 grows spaced set between the horizontal graphene layer of bottom and Co catalysts layer with chemical vapour deposition technique
The vertical graphene layer of multilayer；
Step 4 removes two layers of horizontal graphene layer by argon plasma etch；
Step 5 removes the vertical graphene layer in part with deep reactive ion etch technology, thus all vertical graphene layers it
Between form equidistant arrangement and identical four gaps of size；
Step 6 surrounds dielectric layer through step 5 treated institute with chemical vapor deposition dielectric layer
There are vertical graphene layer and four gaps.
3. a kind of on-chip spiral inductor based on vertical graphene interconnection structure according to claim 2, it is characterised in that: step
The process of two layers of horizontal graphene layer is grown in rapid two specifically: grow the horizontal graphene of bottom on Co catalysts layer first
Layer, then grows the horizontal graphene layer of top layer on the horizontal graphene layer of bottom.
4. a kind of on-chip spiral inductor based on vertical graphene interconnection structure, feature according to Claims 2 or 3 exist
In: the chemical vapour deposition technique in step 2 uses the mixture of acetylene and argon as source gas, and air pressure 1kPa grows water
The environment temperature of flat graphene layer is 45 DEG C, and growth time is 30 minutes.
5. a kind of on-chip spiral inductor based on vertical graphene interconnection structure, feature according to Claims 2 or 3 exist
In: in the argon plasma etch, the pressure of argon gas is 0.5Pa, power 400W.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105825993A (en) * | 2015-01-27 | 2016-08-03 | 三星电机株式会社 | Inductor and method of manufacturing same |
| US20180151487A1 (en) * | 2016-11-26 | 2018-05-31 | Texas Instruments Incorporated | Interconnect via with grown graphitic material |
-
2018
- 2018-12-03 CN CN201811466579.5A patent/CN109768029A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105825993A (en) * | 2015-01-27 | 2016-08-03 | 三星电机株式会社 | Inductor and method of manufacturing same |
| US20180151487A1 (en) * | 2016-11-26 | 2018-05-31 | Texas Instruments Incorporated | Interconnect via with grown graphitic material |
Non-Patent Citations (3)
| Title |
|---|
| DEBLINA SHARKAR.ETC: "High-frequency behavior of graphene-based interconnects-PartII:Impedance analysis and implications for inductor design", 《IEEE TRANSACTIONS ONELECTRON DEVICES》 * |
| MIZUHISA NIHEI.ETC: "Improved thermal conductivity by vertical graphene contact formation for thermal TSV", 《2012 INTERNATIONAL ELECTRON DEVICES MEETING》 * |
| WEN-SHENG ZHAO.ETC: "Vertical Graphene Nanoribbon Interconnects at the End of the Roadmap", 《 IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
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Application publication date: 20190517 |