CN109765654A - The true delay chip of adjustable microwave photon and preparation method thereof based on nitridation silicon optical waveguide - Google Patents

The true delay chip of adjustable microwave photon and preparation method thereof based on nitridation silicon optical waveguide Download PDF

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Publication number
CN109765654A
CN109765654A CN201910117646.0A CN201910117646A CN109765654A CN 109765654 A CN109765654 A CN 109765654A CN 201910117646 A CN201910117646 A CN 201910117646A CN 109765654 A CN109765654 A CN 109765654A
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waveguide
array
helix
input
output
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张彦峰
卢杰筠
陈钰杰
陈晖�
余思远
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Sun Yat Sen University
National Sun Yat Sen University
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National Sun Yat Sen University
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Abstract

The invention discloses a kind of true delay chips of adjustable microwave photon and preparation method thereof based on nitridation silicon optical waveguide comprising the helix of array waveguide grating, several different lengths;Array waveguide grating includes center input waveguide, input waveguide, the first planar waveguide coupler, Waveguide array, the second planar waveguide coupler, center output waveguide, output waveguide;Center input waveguide is successively connect with the first planar waveguide coupler, Waveguide array, the second planar waveguide coupler, center output waveguide;Centered on Waveguide array, the symmetrical upper and lower sides for being arranged in Waveguide array of spiral, and one end of input waveguide corresponding with array waveguide grating upper and lower sides, one end of output waveguide are connected;The other end of input waveguide, the other end of output waveguide are connect with the first planar waveguide coupler, the second planar waveguide coupler respectively;The array waveguide grating and helix form closed loop configuration in a manner of winding, use upper and lower staggered arrangement between helix.

Description

The true delay chip of adjustable microwave photon and preparation method thereof based on nitridation silicon optical waveguide
Technical field
The present invention relates to technical field of optical fiber communication, more particularly to a kind of based on the adjustable micro- of nitridation silicon optical waveguide True delay chip of glistening light of waves and preparation method thereof.
Background technique
With the fast development of information technology, every profession and trade in a hurry toward digitlization transition, to the bandwidth of communication network, delay, More strong, the traditional communication technology of requirement of safety, can no longer meet the demand of society, it is necessary to existing technology into The fusion of row technology, can just break the bottleneck of technology, and integrated micro photonics is come into being.Integrated micro photonics is under completing One third-generation mobile communication, broadband wireless access, Broadband optical access, metropolitan area and wide area fiber optic network, realize end to cloud, end to end Seamless high speed, high quality, the transmission of high user experience information, while realizing that communication equipment size is small, integrated level is high, the need that low energy consumption It asks, provides technical support.
Integrated micro photon technology is by the microwave technology that wireless mobile telecommunication technology is relied on and the light that optic communication is relied on Wave technology combines, and on the one hand may be implemented what current Digital Electronic Technique, microwave technology and digital photon technology cannot achieve On the other hand a large amount of new functions can significantly promote the unapproachable high-performance of current electronic technology, be that fusion is above-mentioned various The core key technology of new generation of the information transmission technology.Integrated micro photonics is mainly used in electronic warfare field, radar at present Field, wireless communication field, CATV Field etc..
Lead to phase in adjacent battle array since traditional electric phase shifter is provided to the incoherent phase compensation of frequency in field of radar The phenomenon that potential difference and adjacent space phase difference are inconsistent, and phased antenna will appear beam tilt in wide instant bandwidth work, I.e. so-called " aperture effect " phenomenon.
Currently, Optical Controlled Phased Array Antenna working principle and the means of realization Optical Controlled Phased Array Antenna are true delay, realize The method being really delayed has very much, wherein using array waveguide grating realize the tunable method being really delayed be earliest 1996 by S. Yegnanarayanan is proposed, and using the AWG of titanium dioxide silicon substrate and the optical fiber of different length, completes 10-40MHz Delay experiment have device size big but since Wavelength division multiplexing module and time delay module are separated from each other, integrated level is low equal scarce It falls into.Single AWG and match are integrated on (per) fluoropolymer materials platform by AydinYeniay and RenfengGao within 2010 The time delay module of channel type realizes that 4bit and maximum delay time reach the true delay function of 600ps, having a size of 3.2cm x 2.0cm, But has the shortcomings that overall dimensions are larger, delay unit design is complicated, bring inconvenience to design and craft.And 2017 Team is built up the Army on silica based platform by what, integrates two AWG and waveguide time delay module, when testing 4bit and maximum delay Between up to 100ps high-precision be delayed, have the shortcomings that overall dimensions are larger having a size of 3.5cm x 3.5cm, but equally, and due to Using the mirror-image structure of two AWG, high, inconvenient technique preparation is required process allowance.
Summary of the invention
The problem of present invention is " aperture effect " existing for the phased antenna array based on conventional radar field, while in order to Solve that the device size that the prior art uses is big, and integrated level is low, complex process problem.It proposes a kind of based on nitridation silicon optical waveguide True delay chip of adjustable microwave photon and preparation method thereof, the true delay chip are utilized refractive index is moderate, superb optical performance Nitridation silicon optical waveguide platform on, using single compact orthogonal type array waveguide grating and straight curved helix, to return The mode of ring integrates the input and output waveguide of array waveguide grating and the helix of different length, greatly reduces device Size, improve integrated level, and design simple, preparation tolerance is big.
To realize aforementioned present invention purpose, the technical solution adopted is as follows: a kind of based on the adjustable micro- of nitridation silicon optical waveguide The true delay chip of glistening light of waves, the helix including array waveguide grating, several different lengths;The array waveguide grating includes Center input waveguide, input waveguide, the first planar waveguide coupler, Waveguide array, the second planar waveguide coupler, center output Waveguide, output waveguide, the center input waveguide successively with the first planar waveguide coupler, Waveguide array, the second planar waveguide Coupler, the connection of center output waveguide;Centered on Waveguide array, the arrangement of the helix of several different lengths respectively symmetrically In the upper and lower sides of Waveguide array, and one end of one end of input waveguide corresponding with array waveguide grating upper and lower sides, output waveguide It is connected;The other end of the input waveguide is connect with the first planar waveguide coupler, the other end of the output waveguide and The connection of two planar waveguide couplers;The helix and array waveguide grating form closed loop configuration in a manner of winding, several The helix of different length is used and is shifted to install up and down.
Preferably, the helix, input waveguide, output waveguide, Waveguide array include rectangular waveguide, on rectangular waveguide The covering of lower setting;The rectangular waveguide uses silicon nitride as ducting layer, using silica as covering.
Further, the ratio of width to height of the rectangular waveguide is 10:1.
Still further, a height of 2um x 0.2um of the width of the rectangular waveguide;The covering is the silica of 5um thickness.
Preferably, the array waveguide grating is orthogonal type array waveguide grating.
Further, the center input waveguide quantity is 1, and input waveguide quantity is 8;The center output waveguide Quantity is 1, and output waveguide quantity is 8;The helix quantity is 8;The input waveguide by helix with it is corresponding Output waveguide connection.
The 1st article of input waveguide is connect by the 1st article of helix with the 1st article of output waveguide;
The 2nd article of input waveguide is connect by the 2nd article of helix with the 2nd article of output waveguide;
The 3rd article of input waveguide is connect by the 3rd article of helix with the 3rd article of output waveguide;
The 4th article of input waveguide is connect by the 4th article of helix with the 4th article of output waveguide;
The 5th article of input waveguide is connect by the 5th article of helix with the 5th article of output waveguide;
The 6th article of input waveguide is connect by the 6th article of helix with the 6th article of output waveguide;
The 7th article of input waveguide is connect by the 7th article of helix with the 7th article of output waveguide;
The 8th article of input waveguide is connect by the 8th article of helix with the 8th article of output waveguide.
The Waveguide array number is 53, and heart septum is 3-5um in input waveguide, output waveguide.
The present invention selects orthogonal type array waveguide grating, suitably adjusts the input channel number of array waveguide grating, exports The number of channel, input, output channel spacing, Waveguide array number input, the key parameters such as heart septum in output waveguide, can be fine The overall dimensions of ground control AWG.And on orthogonal type array wave-guide grating structure more than traditional Smit type array waveguide grating It is compact, it is easy to other devices and carries out compact design.
Preferably, the helix is straight curved helix;The parameter of the straight curved helix be bending radius > 120um, bending types Spline bend, the linking number 1-3 of waveguide, waveguide separation 5-15um.
The present invention selects basic unit of the straight curved helix as delay, suitably adjusts the bending half of curved waveguide The key parameters such as diameter bending types, the linking number of waveguide, waveguide separation can control the overall dimensions of helix well.And it is straight The main portions that curved helix integrally changes using straight wave guide as main length, bending loss is small, whole optical property Than circular rings around spiral shape it is high, the compactness of integral device can also be increased by suitably arranging.
Input that helix of the present invention is connect with array waveguide grating, output wave derivative depend on delay series, delay-level Number is more, and input and output waveguide number needed for array waveguide grating is more.Postpone series and helix step-length depending on required Delay precision, precision is higher, delay series it is more, helix step-length is smaller, and vice versa.Helix maximum length depends on The radio frequency operation bandwidth upper limit wavelength of device, such as 10GHz corresponding wavelength ~ 3cm, i.e. the maximum length of helix is 3cm.
The working principle of adjustable microwave photon true delay chip of the present invention based on nitridation silicon optical waveguide: different waves The light of long (1 λ of λ, 2 λ 3 ...) is entered by center input waveguide, and by the first planar waveguide coupler, light wave is carried out freely Propagate simultaneously coupled with Waveguide array, after exported from Waveguide array and pass through the second planar waveguide coupler focus on it is corresponding In output waveguide, then entered in the helix (corresponding delay 2 t of t, 3 t ...) of different length by output waveguide It propagates, using the spatial symmetry of array waveguide grating, is directly reversely connected back corresponding input waveguide, carries out wavelength-division multiplex, finally The light of different wave length is focused in the output waveguide of center by the second planar waveguide coupler and is exported, multiplexing is completed and at different levels is prolonged Shi Gongneng.
Since " aperture effect " of phased antenna array is phase difference and phase in the adjacent battle array as provided by electric phase shifter Caused by adjacent space quadrature is inconsistent, and phase compensation provided by electric phase shifter is that rf frequency is incoherent and required Adjacent space phase difference is related to rf frequency, and the present invention need to only be adjusted different wavelength and be carried by adjustable Real-time Delay technology Wave, can be realized different time delay effects, the radiofrequency signal of corresponding different frequency can be obtained corresponding phase compensation and with phase Adjacent space quadrature is consistent, to solve the problems, such as " aperture effect " of phased antenna array.
It is really delayed core the present invention also provides a kind of based on the above-described adjustable microwave photon based on nitridation silicon optical waveguide The preparation method of piece, the preparation method comprises the following steps:
S1: in the silicon nitride waveguides material of 5um titanium dioxide grown above silicon 200nm;
S2: whirl coating and front baking;
S3: EBL exposure is carried out;
S4: developing fixing;
S5: carrying out RIE Nitride Strip Process Characterization and ICP beats oxygen technique;
S6: the silica covering of CVD growth 5um is utilized;
S7: cleavage and test are carried out.
The present invention is prepared using the process flow compatible with CMOS technology, and selective refraction rate is moderate, optical property is excellent More and the silicon nitride material of preparation easy to process is as ducting layer, and using silica as upper under-clad layer, silica is compared in formation Base and polymer want much higher relative fefractive index difference, therefore the bending radius of identical sized waveguide is substantially reduced, whole device Part size also greatly reduces.
Beneficial effects of the present invention are as follows:
(1) present invention using the moderate silicon nitride material of refractive index as ducting layer, refractive index than (per) fluoropolymer and Silica wants high, and so as to be substantially reduced the size of integral device, and silicon nitride material has superior thermo-optical property, Temperature adjusting and subsequent active integrated technique requirement can be met well.
(2) present invention realizes adjustable true delay function using single orthogonal type array waveguide grating and straight curved helix Can, array waveguide grating and helix form closed loop configuration in a manner of winding, with integrated level is high, size is small, loss is low, prolongs When time adjustable, easy to process feature.
(3) present invention is by adjustable Real-time Delay technology, need to adjust different wavelength carriers, when can be realized different Prolongation of effect fruit, the radiofrequency signal of corresponding different frequency can be obtained corresponding phase compensation and keep one with adjacent space phase difference It causes, to solve the problems, such as " aperture effect " of phased antenna array.
Detailed description of the invention
Fig. 1 is the structure chart of adjustable microwave photon true delay chip of the present embodiment based on nitridation silicon optical waveguide.
Fig. 2 is the finished product structure figure of adjustable microwave photon true delay chip of the present embodiment based on nitridation silicon optical waveguide.
Fig. 3 is the loss test result of the present embodiment.
Fig. 4 is the delay product of the RF signal of the present embodiment 1-10GHz.
In figure, 1- array waveguide grating, 2- helix, the center 3- input waveguide, the first planar waveguide of 4- coupler, 5- gusts Train wave leads, the second planar waveguide of 6- coupler, the center 7- output waveguide, 8- input waveguide, 9- output waveguide.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and detailed description.
Embodiment 1
As shown in Figure 1 and Figure 2, a kind of true delay chip of adjustable microwave photon based on nitridation silicon optical waveguide, including Waveguide array light The helix 2 of grid 1, several different lengths;The array waveguide grating 1 includes center input waveguide 3, input waveguide 8, first Planar waveguide coupler 4, Waveguide array 5, the second planar waveguide coupler 6, center output waveguide 7, output waveguide 9, it is described Center input waveguide 3 is successively exported with the first planar waveguide coupler 4, Waveguide array 5, the second planar waveguide coupler 6, center Waveguide 7 connects;Centered on Waveguide array 5, the helix 2 of several different lengths respectively symmetrically be arranged in Waveguide array 5 Upper and lower sides, and one end of input waveguide 8 corresponding with 1 upper and lower sides of array waveguide grating, one end of output waveguide 9 are connected; The other end of the input waveguide 8 is connect with the first planar waveguide coupler, the other end and the second plate of the output waveguide 9 Waveguide coupler connection;The array waveguide grating 1 forms closed loop configuration with helix 2 in a manner of winding.Several are different Upper and lower staggered arrangement is used between the helix 2 of length, can improve the integrated level of chip unit area, and entire device size can be with Control is in mm2Magnitude.
The helix 2, input waveguide 8, output waveguide 9, Waveguide array (5) include rectangular waveguide, rectangular waveguide Covering setting up and down;The rectangular waveguide forms ratio using silica as covering as ducting layer using silicon nitride Titanium dioxide silicon substrate and polymer want much higher relative fefractive index difference, therefore the bending radius of identical sized waveguide contracts significantly Small, integral device size also greatly reduces.The ratio of width to height of the rectangular waveguide is 10:1.The a height of 2um of the width of the rectangular waveguide x 0.2um;The covering is the silica of 5um thickness.
Array waveguide grating 1 described in the present embodiment is orthogonal type array waveguide grating;3 quantity of center input waveguide It is 1,8 quantity of input waveguide is 8;7 quantity of center output waveguide is 1, and 9 quantity of output waveguide is 8;The spiral shell Spin line quantity is 8;
The 1st article of input waveguide is connect by the 1st article of helix with the 1st article of output waveguide;
The 2nd article of input waveguide is connect by the 2nd article of helix with the 2nd article of output waveguide;
The 3rd article of input waveguide is connect by the 3rd article of helix with the 3rd article of output waveguide;
The 4th article of input waveguide is connect by the 4th article of helix with the 4th article of output waveguide;
The 5th article of input waveguide is connect by the 5th article of helix with the 5th article of output waveguide;
The 6th article of input waveguide is connect by the 6th article of helix with the 6th article of output waveguide;
The 7th article of input waveguide is connect by the 7th article of helix with the 7th article of output waveguide;
The 8th article of input waveguide is connect by the 8th article of helix with the 8th article of output waveguide.
The Waveguide array number is 53, and heart septum is 3-5um in input waveguide, output waveguide, can be controlled well The overall dimensions of AWG processed.And it is more more compact than traditional Smit type array waveguide grating on orthogonal type array wave-guide grating structure, It is easy to other devices and carries out compact design.
Helix 2 described in the present embodiment is straight curved helix;Select straight curved helix as the substantially single of delay Member, the parameter of the straight curved helix is bending radius > 120um, bending types Spline bend, waveguide linking number 1- 3, waveguide separation 5-15um.The main portions that straight curved helix integrally changes using straight wave guide as main length, bending Be lost it is small, whole optical property than circular rings around spiral shape it is high, the compactness of integral device can also be increased by suitably arranging.
The present embodiment passes through the optimization design of basic original part early period two, carries out the design ginseng of array waveguide grating 1 respectively Several optimization, such as waveguide type, the number of channel, channel spacing, waveguide separation obtain all lower array of insertion loss and crosstalk Waveguide optical grating 1, and carry out helix 2 structural parameters optimization, design low-loss curved waveguide type, waveguide separation, Around number etc., the true delay chip that low-loss, size is small, integrated level is high is obtained.
The present embodiment also provide it is a kind of based on it is above-described based on nitridation silicon optical waveguide adjustable microwave photon be really delayed The preparation method of chip, the preparation method comprises the following steps:
S1: in the silicon nitride waveguides material of 5um titanium dioxide grown above silicon 200nm;
S2: whirl coating and front baking;
S3: EBL exposure is carried out;
S4: developing fixing;
S5: carrying out RIE Nitride Strip Process Characterization and ICP beats oxygen technique;
S6: the silica covering of CVD growth 5um is utilized;
S7: cleavage and test are carried out.
Preparation method in the present embodiment, using traditional CMOS preparation process, the processing step being related to is simple and technique Period is short, greatly improves preparation efficiency.
By the structure and preparation method of the true delay chip of adjustable microwave photon above based on nitridation silicon optical waveguide, complete The array waveguide grating of 8 channels and straight curved helix it is integrated, integral device is having a size of 5.26 x 3.39mm2
As shown in figure 3, for the true delay chip of adjustable microwave photon based on nitridation silicon optical waveguide described in the present embodiment Loss test is as a result, include that 8 grades of delay responses are responded with central channel.
As shown in figure 4, for the true delay chip of adjustable microwave photon based on nitridation silicon optical waveguide described in the present embodiment, By the delay product of the RF signal of 1-10GHz, since the bandwidth of test equipment limits, test obtains 7 grades of delay data, leads to The fitting to delay datas at different levels is crossed, obtaining fitting step-length is t=12.6ps.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair The restriction of embodiments of the present invention.Any modification done within the spirit and principles of the present invention and changes equivalent replacement Into etc., it should all be included in the scope of protection of the claims of the present invention.

Claims (8)

1. a kind of true delay chip of adjustable microwave photon based on nitridation silicon optical waveguide, it is characterised in that: including Waveguide array light The helix (2) of grid (1), several different lengths;The array waveguide grating (1) includes center input waveguide (3), incoming wave Lead (8), the first planar waveguide coupler (4), Waveguide array (5), the second planar waveguide coupler (6), center output waveguide (7), output waveguide (9), the center input waveguide (3) successively with the first planar waveguide coupler (4), Waveguide array (5), Second planar waveguide coupler (6), center output waveguide (7) connection;Centered on Waveguide array (5), several different lengths Helix (2) upper and lower sides for being arranged in Waveguide array (5) respectively symmetrically, and it is corresponding with array waveguide grating (1) upper and lower sides One end of input waveguide (8), one end of output waveguide (9) is connected;The other end and the first plate of the input waveguide (8) Waveguide coupler connection, the other end of the output waveguide (9) are connect with the second planar waveguide coupler;The helix (2) Closed loop configuration is formed in a manner of winding with array waveguide grating (1), the helix (2) of several different lengths is using wrong up and down Position setting.
2. the adjustable microwave photon true delay chip according to claim 1 based on nitridation silicon optical waveguide, it is characterised in that: The helix (2), input waveguide (8), output waveguide (9), Waveguide array (5) include rectangular waveguide, above and below rectangular waveguide The covering of setting;The rectangular waveguide uses silicon nitride as ducting layer, using silica as covering.
3. the adjustable microwave photon true delay chip according to claim 2 based on nitridation silicon optical waveguide, it is characterised in that: The ratio of width to height of the rectangular waveguide is 10:1.
4. the adjustable microwave photon true delay chip according to claim 3 based on nitridation silicon optical waveguide, it is characterised in that: The a height of 2um x 0.2um of the width of the rectangular waveguide;The covering is the silica of 5um thickness.
5. the adjustable microwave photon true delay chip according to claim 1 based on nitridation silicon optical waveguide, it is characterised in that: The array waveguide grating (1) is orthogonal type array waveguide grating.
6. the adjustable microwave photon true delay chip according to claim 5 based on nitridation silicon optical waveguide, it is characterised in that: Center input waveguide (3) quantity is 1, and input waveguide (8) quantity is 8;Center output waveguide (7) quantity is 1 Item, output waveguide (9) quantity are 8;The helix quantity is 8;The input waveguide (8) by helix with it is corresponding Output waveguide (9) connection;The Waveguide array number is 53, and heart septum is 3-5um in input waveguide, output waveguide.
7. the adjustable microwave photon true delay chip according to claim 1 based on nitridation silicon optical waveguide, it is characterised in that: The helix (2) is straight curved helix;The parameter of the straight curved helix is bending radius > 120um, bending types Spline bend, the linking number 1-3 of waveguide, waveguide separation 5-15um.
8. one kind is really delayed based on the described in any item adjustable microwave photons based on nitridation silicon optical waveguide of the above claim 1 ~ 7 The preparation method of chip, it is characterised in that: the preparation method comprises the following steps:
S1: in the silicon nitride waveguides material of 5um titanium dioxide grown above silicon 200nm;
S2: whirl coating and front baking;
S3: EBL exposure is carried out;
S4: developing fixing;
S5: carrying out RIE Nitride Strip Process Characterization and ICP beats oxygen technique;
S6: the silica covering of CVD growth 5um is utilized;
S7: cleavage and test are carried out.
CN201910117646.0A 2019-02-15 2019-02-15 The true delay chip of adjustable microwave photon and preparation method thereof based on nitridation silicon optical waveguide Pending CN109765654A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110221386A (en) * 2019-06-11 2019-09-10 华东理工大学 A kind of optical waveguide optical beam deflecting device and light beam deflection method

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US20030170030A1 (en) * 2002-03-08 2003-09-11 Masashi Usami Optical delay unit
CN105372757A (en) * 2014-08-13 2016-03-02 华为技术有限公司 Method for producing an integrated optical circuit
CN205726199U (en) * 2016-04-18 2016-11-23 浙江大学 A kind of full optical buffer based on arrayed-waveguide grating routers
CN109270628A (en) * 2018-09-28 2019-01-25 上海理工大学 A kind of visible light wave range silicon nitride light beam deflection chip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414548A (en) * 1992-09-29 1995-05-09 Nippon Telegraph And Telephone Corporation Arrayed-wave guide grating multi/demultiplexer with loop-back optical paths
US20030170030A1 (en) * 2002-03-08 2003-09-11 Masashi Usami Optical delay unit
CN105372757A (en) * 2014-08-13 2016-03-02 华为技术有限公司 Method for producing an integrated optical circuit
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CN109270628A (en) * 2018-09-28 2019-01-25 上海理工大学 A kind of visible light wave range silicon nitride light beam deflection chip

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Publication number Priority date Publication date Assignee Title
CN110221386A (en) * 2019-06-11 2019-09-10 华东理工大学 A kind of optical waveguide optical beam deflecting device and light beam deflection method

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