CN109755231A - White-light LED chip - Google Patents
White-light LED chip Download PDFInfo
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- CN109755231A CN109755231A CN201811629250.6A CN201811629250A CN109755231A CN 109755231 A CN109755231 A CN 109755231A CN 201811629250 A CN201811629250 A CN 201811629250A CN 109755231 A CN109755231 A CN 109755231A
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Abstract
The present invention provides a kind of White-light LED chips, comprising: metal electrode, blue LED flip chip, transparent silica gel, high anti-glue and fluorescence diaphragm；Wherein, metal electrode is set to electrode pad surface in LED chip；Fluorescence diaphragm is set to the upper surface of LED chip, and area is greater than the area on LED chip surface, is symmetrical arranged along the center of LED chip, and the titania powder for being 0.5~5% doped with mass ratio in fluorescence diaphragm；Transparent silica gel is set to LED chip surrounding in arcuation towards fluorescence diaphragm in fluorescence membrane surface；High anti-glue is set to LED chip surrounding along transparent silica gel surface, and high anti-glue is without departing from the metal electrode on LED chip surface.In the White-light LED chip, while reducing the gap between White-light LED chip central point colour temperature and average color temperature, the Color uniformity of White-light LED chip is more preferable.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of White-light LED chip.
Background technique
LED (Light Emitting Diode, light emitting diode) is that one kind can convert electrical energy into consolidating for visible light
The semiconductor devices of state, principle of luminosity are electroluminescence, i.e., on PN junction plus after forward current, free electron and hole-recombination
And shine, so that electric energy is directly converted into luminous energy.LED, especially white light LEDs, as a kind of new lighting source material quilt
Be widely applied, it has many advantages, such as, and reaction speed is fast, shock resistance is good, the service life is long, energy conservation and environmental protection and it is fast-developing, at present by
It is widely used in the fields such as beautification of landscape and indoor and outdoor lighting.
In traditional patch encapsulation, ceramic package, wafer-level package CSP product, because LED chip area ratio fluorescent powder applies
The area covered is small, it may appear that the brightness on LED chip surface is higher than chip surrounding, sends out from chip center toward peripheral direction colour temperature is synchronous
The phenomenon that changing, is tested by light emitting angle test and illumination photometer, and chip center's point colour temperature is higher by 200 with respect to average color temperature~
500k etc., as shown in Figure 1, abscissa indicates that the light emitting angle (angle of the lamp bead in integrating sphere) of lamp bead, ordinate indicate
Color temperature value (k) under different light emitting angles, chip center's point colour temperature and surrounding colour temperature difference reach 800k (Kelvin), lamp bead surface hair
Light color shows inhomogeneities.But in mobile phone flashlight application, often colour consistency is good in a region, LED
Center colour temperature and average color temperature are closer, and effect is better.
Summary of the invention
In view of the above-mentioned problems, the present invention is intended to provide a kind of White-light LED chip, effectively solves in existing White-light LED chip
Heart point colour temperature differs larger technical problem with average color temperature.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of White-light LED chip includes: metal electrode, blue LED flip chip, transparent silicon in the White-light LED chip
Glue, high anti-glue and fluorescence diaphragm；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along described
The center of LED chip is symmetrical arranged, and the titanium dioxide for being 0.5~5% doped with mass ratio in the fluorescence diaphragm
(TiO2) powder；
The transparent silica gel is set to the LED chip surrounding in arcuation towards fluorescence diaphragm in the fluorescence membrane surface；
The anti-glue of height is set to the LED chip surrounding along transparent silica gel surface, and the anti-glue of height is without departing from LED chip
The metal electrode on surface.
A kind of White-light LED chip includes: metal electrode, blue LED flip chip, transparent silicon in the White-light LED chip
Glue, high anti-glue, fluorescence diaphragm and titanium oxide film layer；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along described
The center of LED chip is symmetrical arranged；
The titanium oxide film layer is set to the fluorescence membrane surface, and size is identical as the fluorescence diaphragm；The dioxy
Change titanium film layer to be mixed with by titania powder and transparent silica gel, the mass ratio of titania powder is 0.5~5%；
The transparent silica gel is set to the LED chip surrounding in arcuation towards fluorescence diaphragm in the fluorescence membrane surface；
The anti-glue of height is set to the LED chip surrounding along transparent silica gel surface, and the anti-glue of height is without departing from LED chip
The metal electrode on surface.
A kind of White-light LED chip includes: metal electrode, blue LED flip chip, transparent silicon in the White-light LED chip
Glue, high anti-glue, fluorescence diaphragm and titanium oxide film layer；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along described
The center of LED chip is symmetrical arranged；
The titanium oxide film layer is set to the fluorescence membrane surface, and size is identical as the fluorescence diaphragm；The dioxy
Change titanium film layer to be mixed with by titania powder and transparent silica gel, the mass ratio of titania powder is 0.5~5%；
The transparent silica gel is set to the LED chip surrounding, and the angle of slope surface in lower ramp shaped in the fluorescence membrane surface
Spending range is 5~45 ° (degree)；
The anti-glue of height along the LED chip, transparent silica gel and fluorescence diaphragm surrounding be arranged, and the anti-glue of height without departing from
The metal electrode on LED chip surface.
In White-light LED chip provided by the invention, can at least bring it is following the utility model has the advantages that
1. adding the titania powder that mass ratio is 0.5~5% in fluorescence diaphragm, or covered in fluorescence membrane surface
Layer of titanium dioxide film layer (titanium dioxide and silica gel for being 0.5~5% by mass ratio are mixed with), reduces White-light LED chip
While gap between central point colour temperature and average color temperature, the Color uniformity of White-light LED chip is more preferable；
2. White-light LED chip surrounding is provided with high anti-glue (high reflectance white glue), the light issued with this from side is by the height
Anti- glue reflects back, and realizes that single side goes out the purpose of light.In addition, being equipped on blue LED flip chip and fluorescence the diaphragm surface that connects
Arcuation or ramped shaped transparent silica gel equally show ramped shaped with the anti-glue of height that this is filled in transparent silica gel surface, the structure
Be arranged so that blue LED flip chip side issue light reflect back as effective light from light-emitting surface export, substantially increase
The light extraction efficiency of high photosynthetic efficiency white chip.
3. compared to existing White-light LED chip, the White-light LED chip be provided simultaneously with hot spot more evenly, thermal conductivity is good, hair
Angular is small, advantages, the convenience for substantially increasing the application range of LED and using such as at low cost especially require light emitting anger
Small application field is spent, such as LED backlight field.
Detailed description of the invention
Fig. 1 is White-light LED chip center colour temperature in the prior art and chip surrounding colour temperature difference schematic diagram；
Fig. 2, Fig. 4, Fig. 5 are White-light LED chip structural schematic diagram in the present invention；
Fig. 3, Fig. 6 are White-light LED chip preparation process schematic diagram of the present invention；
Fig. 7 is White-light LED chip center colour temperature and chip surrounding colour temperature difference schematic diagram in an example of the invention；
Fig. 8 is White-light LED chip center colour temperature and chip surrounding colour temperature difference schematic diagram in another example of the present invention.
Identifier declaration in figure:
1- blue LED flip chip, 2- transparent silica gel, 3- fluorescence diaphragm, 4- supporting substrate, the anti-glue of 5- high, 6-TiO2Film
Layer.
Specific embodiment
It is illustrated in figure 2 a kind of embodiment structure schematic diagram of White-light LED chip provided by the invention, in the white light LEDs
It include: metal electrode, blue LED flip chip 1, transparent silica gel 2, high anti-glue 5 and fluorescence diaphragm 3 in chip；Wherein, metal
Electrode is set to electrode pad surface in LED chip；Fluorescence diaphragm 3 is set to the upper surface of LED chip, and area is greater than LED chip table
The area in face is symmetrical arranged along the center of LED chip, and is 0.5~5% doped with mass ratio in fluorescence diaphragm 3
TiO2Powder；Transparent silica gel 2 is set to LED chip surrounding in arcuation towards fluorescence diaphragm 3 in 3 surface of fluorescence diaphragm；High anti-5 edge of glue
2 surface of transparent silica gel is set to LED chip surrounding, and high anti-glue 5 is without departing from the metal electrode on LED chip surface.
In the LED chip, the thickness range of metal electrode is 10~200 μm (micron), and using plating or chemistry
The method of plating is formed in 1 surface of blue LED flip chip.Transparent silica gel 2 is in 3 surface of fluorescence diaphragm towards fluorescence diaphragm 3 in arc
Shape is set to LED chip surrounding, and along any side of LED chip, the altitude range of transparent silica gel 2 is 10~150 μm, width model
Enclose is 10~1000 μm.Fluorescence diaphragm 3 is set to the upper surface of LED chip, and the area of fluorescence diaphragm 3 is greater than LED chip surface
Area, fluorescence diaphragm 3 along LED chip center be arranged so that 1 side of blue LED flip chip issue light reflection
Going back becomes effective light exports from light-emitting surface, to improve the light extraction efficiency of White-light LED chip.
During preparing fluorescence diaphragm 3, after fluorescent powder and transparent silica gel 2 are mixed, incorporation mass ratio is 0.5~
5% TiO2Powder is uniformly mixed using deaeration machine, is uniformly coated preset thickness (such as 50~150 μm) in support film surface, and
Baking-curing is carried out to form.
During preparing White-light LED chip, after the completion of prepared by fluorescence diaphragm 3, in the table of blue LED flip chip 1
Wheat flour is for metal electrode (such as copper electrode)；Later, fluorescence diaphragm 3 is placed on supporting substrate 4, then in 3 table of fluorescence diaphragm
The identical transparent silica gel 2 of size is uniformly such as put on the surface of fluorescence diaphragm 3 according to preset rules point transparent silica gel 2 in face；Later,
The blue LED flip chip 1 for being prepared for metal electrode (not preparing one side surface of metal electrode) is placed in fluorescence diaphragm 3
Put on the position of transparent silica gel 2 and solidify (such as 150 ° at a temperature of toast 2 hours), make 1 surrounding of blue LED flip chip
Lower cancave bowl shaped is presented in the transparent silica gel 2 on surface, as shown in Figure 3；Later, saturating between adjacent two blue LED flip chips 1
The bright high anti-glue 5 of 2 surface of silica gel filling, until the height of metal electrode and solidification；Along adjacent two blue LED flip chips 1
Between groove cut, obtain single White-light LED chip.
It is illustrated in figure 4 a kind of embodiment structure schematic diagram of White-light LED chip provided by the invention, comprising: metal electricity
Pole, blue LED flip chip 1, transparent silica gel 2, high anti-glue 5, fluorescence diaphragm 3 and TiO2Film layer 6；Wherein, metal electrode is set to
Electrode pad surface in LED chip；Fluorescence diaphragm 3 is set to the upper surface of LED chip, and area is greater than the area on LED chip surface,
It is symmetrical arranged along the center of LED chip；TiO2Film layer 6 is set to 3 surface of fluorescence diaphragm, and size is identical as fluorescence diaphragm 3；Thoroughly
Bright silica gel 2 is set to LED chip surrounding in arcuation towards fluorescence diaphragm 3 in 3 surface of fluorescence diaphragm；High anti-glue 5 is along 2 table of transparent silica gel
Face is set to LED chip surrounding, and high anti-glue 5 is without departing from the metal electrode on LED chip surface.
In the LED chip, the thickness range of metal electrode is 10~200 μm, and using plating or the side of chemical plating
Method is formed in 1 surface of blue LED flip chip.Transparent silica gel 2 is set to towards fluorescence diaphragm 3 in arcuation in 3 surface of fluorescence diaphragm
LED chip surrounding, and along any side of LED chip, the altitude range of transparent silica gel 2 is 10~150 μm, width range 10
~1000 μm.Fluorescence diaphragm 3 is set to the upper surface of LED chip, and the area of fluorescence diaphragm 3 is greater than the area on LED chip surface,
Fluorescence diaphragm 3 is arranged along the center of LED chip, so that the light that 1 side of blue LED flip chip issues, which reflects back, to be become
Effective light is exported from light-emitting surface, to improve the light extraction efficiency of White-light LED chip.
Unlike previous embodiment, in the present embodiment, TiO2Powder is doped in fluorescence diaphragm 3,
But it is mixed with to obtain TiO with transparent silica gel 22Film layer 6, and by the TiO2Film layer 6 is affixed on 3 surface of fluorescence diaphragm.Specifically, exist
Prepare TiO2During film layer 6, the TiO that mass ratio is 0.5~5% is mixed in transparent silica gel 22Powder, after evenly mixing,
Certain thickness is uniformly coated in support film surface, with a thickness of 20-150 μm, and 90min baking-curing at a temperature of 150 DEG C of progress
It forms.
During preparing White-light LED chip, after the completion of prepared by fluorescence diaphragm 3, in the table of blue LED flip chip 1
Wheat flour is for metal electrode (such as copper electrode)；The identical transparent silica gel 2 of size is uniformly put on the surface of fluorescence diaphragm 3；Later, it will make
3 midpoint of fluorescence diaphragm is placed on for the blue LED flip chip 1 of metal electrode (not preparing one side surface of metal electrode)
On the position of transparent silica gel 2 and solidify (such as 150 ° at a temperature of toast 2 hours), make 1 surrounded surface of blue LED flip chip
Transparent silica gel 2 lower cancave bowl shaped is presented, as shown in Figure 3；Later, the transparent silicon between adjacent two blue LED flip chips 1
The high anti-glue 5 of 2 surface of glue filling, until the height of metal electrode and solidification；Supporting substrate 4 is removed, by TiO2Film layer 6 is affixed on fluorescence
3 surface of diaphragm is (by TiO2Film layer is half roasting film layer, can be affixed on 3 surface of fluorescence diaphragm in such a way that high-temperature vacuum presses), 150
90min is toasted at a temperature of DEG C completes solidification.It is cut, is obtained along the groove between adjacent two blue LED flip chips 1
To single White-light LED chip.
It is illustrated in figure 5 White-light LED chip structural schematic diagram provided by the invention, comprising: metal electrode, upside-down mounting blue light
LED chip 1, transparent silica gel 2, high anti-glue 5, fluorescence diaphragm 3 and TiO2Layer 6；Wherein, metal electrode is set to electrode in LED chip
Bond pad surface；Fluorescence diaphragm 3 is set to the upper surface of LED chip, and area is greater than the area on LED chip surface, along LED chip
The setting of heart positional symmetry；TiO2Film layer 6 is set to 3 surface of fluorescence diaphragm, and size is identical as fluorescence diaphragm 3；TiO2Film layer is by TiO2Powder
End and transparent silica gel 2 are mixed with, TiO2The mass ratio of powder is 0.5~5%；High anti-glue 5 along LED chip, transparent silica gel 2 and
The setting of 3 surrounding of fluorescence diaphragm, and high anti-glue 5 is without departing from the metal electrode on LED chip surface.
In the White-light LED chip, the thickness range of metal electrode is 10~200 μm, and using plating or chemical plating
Method be formed in 1 surface of blue LED flip chip, in practical applications, which can be for copper electrode etc..Transparent silicon
Glue 2 is set to LED chip four in lower ramp shaped (angular range of slope surface is 5~45 °) towards fluorescence diaphragm 3 in 3 surface of fluorescence diaphragm
Week, and along any side of LED chip, the altitude range of transparent silica gel 2 is 120~150 μm, and width range is 120~1000 μ
m.Fluorescence diaphragm 3 is set to the upper surface of LED chip, and the area of fluorescence diaphragm 3 is greater than the area on LED chip surface, fluorescent film
Piece 3 is symmetrical arranged along the center of LED chip, so that the light that 1 side of blue LED flip chip issues, which reflects back to become, to be had
It imitates light to export from light-emitting surface, to substantially increase the light extraction efficiency of White-light LED chip.
In preparation TiO2During film layer 6, the TiO that mass ratio is 0.5~5% is mixed in transparent silica gel 22Powder,
After even mixing, certain thickness is uniformly coated in support film surface, with a thickness of 20-150 μm, and it is solid to carry out baking 90min at 150 DEG C
Change.
During preparing the White-light LED chip, after preparing and selecting satisfactory fluorescence diaphragm, in upside-down mounting blue light
Plating metal obtains metal electrode (such as copper facing) on the electrode of LED chip 1.It is saturating according to preset rules point on 3 surface of fluorescence diaphragm
Bright silica gel such as uniformly puts the identical transparent silica gel 2 of size on the surface of fluorescence diaphragm 3；Later, falling for metal electrode will be prepared for
Dress blue-light LED chip 1 (not preparing one side surface of metal electrode) is placed on the position of transparent silica gel of fluorescence diaphragm midpoint
And solidify (such as 150 ° at a temperature of toast 2 hours), make the transparent silica gel 2 of blue LED flip chip surrounded surface in now
Concave ramp shaped, as shown in Figure 6；Then, fluorescence diaphragm 3 is cut along Cutting Road, and expands adjacent blue LED flip chip 1
The distance between；Later, it is filled out between adjacent two blue LED flip chips 1 along support substrate surface and transparent silica gel surface
High anti-glue 5 is filled, until the height of high reflection glue 5 is consistent with metal electrode height；Supporting substrate 4 is removed, by TiO2Film layer 6 is affixed on
3 surface of fluorescence diaphragm is (by TiO2Film layer is half roasting film layer, and 3 surface of fluorescence diaphragm can be affixed on by high-temperature vacuum pressing mode),
90min is toasted at a temperature of 150 DEG C completes solidification.Finally, along the groove between adjacent two blue LED flip chips 1 into
Row cutting, obtains White-light LED chip as shown in Figure 5.
In one example, in White-light LED chip structure as shown in Figure 2, the TiO that mass ratio is 3% is adulterated2Powder,
By the way that hand-held illumination measurement examination obtains the colour temperature of chip bosom point, spatial spectral radiometer tests to obtain colour temperature around chip
Afterwards, figure is as shown in fig. 7, the colour temperature and surrounding colour temperature difference of chip center are 350k-400k.
In another example, in White-light LED chip structure as shown in Figure 4 and Figure 5, doping mass ratio is 5%
TiO2Powder makes film forming layer TiO2, it is affixed on fluorescence membrane surface in lamp bead, after the lamp bead under the structure is lighted, passes through hand-held illumination
Degree measurement examination obtains the colour temperature of chip bosom point, spatial spectral radiometer is tested to obtain around chip after colour temperature, such as Fig. 8 institute
Show, the colour temperature and surrounding colour temperature difference of chip center are 350k-400k.
Claims (9)
1. a kind of White-light LED chip, which is characterized in that include: metal electrode, upside-down mounting blue-ray LED core in the White-light LED chip
Piece, transparent silica gel, high anti-glue and fluorescence diaphragm；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along the LED core
The center of piece is symmetrical arranged, and the titania powder for being 0.5~5% doped with mass ratio in the fluorescence diaphragm；
The transparent silica gel is set to the LED chip surrounding in arcuation towards fluorescence diaphragm in the fluorescence membrane surface；
The anti-glue of height is set to the LED chip surrounding along transparent silica gel surface, and the anti-glue of height is without departing from LED chip surface
Metal electrode.
2. high photosynthetic efficiency White-light LED chip as described in claim 1, which is characterized in that the thickness range of the metal electrode is
10~200 μm, metal electrode is formed on the LED chip surface using the method for plating or chemical plating.
3. White-light LED chip as claimed in claim 1 or 2, which is characterized in that transparent along any side of the LED chip
The altitude range of silica gel is 10~150 μm, and width range is 10~1000 μm.
4. a kind of White-light LED chip, which is characterized in that include: metal electrode, upside-down mounting blue-ray LED core in the White-light LED chip
Piece, transparent silica gel, high anti-glue, fluorescence diaphragm and titanium oxide film layer；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along the LED core
The center of piece is symmetrical arranged；
The titanium oxide film layer is set to the fluorescence membrane surface, and size is identical as the fluorescence diaphragm；The titanium dioxide
Film layer is mixed with by titania powder and transparent silica gel, and the mass ratio of titania powder is 0.5~5%；
The transparent silica gel is set to the LED chip surrounding in arcuation towards fluorescence diaphragm in the fluorescence membrane surface；
The anti-glue of height is set to the LED chip surrounding along transparent silica gel surface, and the anti-glue of height is without departing from LED chip surface
Metal electrode.
5. high photosynthetic efficiency White-light LED chip as claimed in claim 4, which is characterized in that the thickness range of the metal electrode is
10~200 μm, metal electrode is formed on the LED chip surface using the method for plating or chemical plating.
6. White-light LED chip as described in claim 4 or 5, which is characterized in that transparent along any side of the LED chip
The altitude range of silica gel is 10~150 μm, and width range is 10~1000 μm.
7. a kind of White-light LED chip, which is characterized in that include: metal electrode, upside-down mounting blue-ray LED core in the White-light LED chip
Piece, transparent silica gel, high anti-glue, fluorescence diaphragm and titanium oxide film layer；Wherein,
The metal electrode is set to electrode pad surface in the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and area is greater than the area on LED chip surface, along the LED core
The center of piece is symmetrical arranged；
The titanium oxide film layer is set to the fluorescence membrane surface, and size is identical as the fluorescence diaphragm；The titanium dioxide
Film layer is mixed with by titania powder and transparent silica gel, and the mass ratio of titania powder is 0.5~5%；
The transparent silica gel is set to the LED chip surrounding, and the angle model of slope surface in lower ramp shaped in the fluorescence membrane surface
Enclose is 5~45 °；
The anti-glue of height is arranged along the LED chip, transparent silica gel and fluorescence diaphragm surrounding, and the anti-glue of height is without departing from LED
The metal electrode of chip surface.
8. high photosynthetic efficiency White-light LED chip as claimed in claim 4, which is characterized in that the thickness range of the metal electrode is
10~200 μm, metal electrode is formed on the LED chip surface using the method for plating or chemical plating.
9. White-light LED chip as claimed in claim 7 or 8, which is characterized in that transparent along any side of the LED chip
The altitude range of silica gel is 120~150 μm, and width range is 120~1000 μm.
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| CN201811629250.6A CN109755231A (en) | 2018-12-29 | 2018-12-29 | White-light LED chip |
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|---|---|---|---|
| CN201811629250.6A CN109755231A (en) | 2018-12-29 | 2018-12-29 | White-light LED chip |
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ID=66404221
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110970543A (en) * | 2019-12-05 | 2020-04-07 | 江西省晶能半导体有限公司 | Fluorescent diaphragm and white light LED chip |
| CN111063784A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | LED lamp bead preparation method |
| CN111063783A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | Preparation method of fluorescent diaphragm and preparation method of LED lamp bead |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
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