CN109742202A - Single-photon source device, preparation method and quantum memory - Google Patents
Single-photon source device, preparation method and quantum memory Download PDFInfo
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Abstract
It includes: quantum dot light emitting layer that the present invention, which provides a kind of single-photon source device, preparation method and quantum memory, single-photon source device, and quantum dot light emitting layer includes barrier layer and the quantum dot layer in barrier layer；Piezoelectric ceramics substrate, by piezoelectric ceramics substrate with the luminescent spectrum central wavelength of quantum point luminescent layer；Bonded layer, bonded layer connect quantum dot light emitting layer and piezoelectric ceramics substrate between quantum dot light emitting layer and piezoelectric ceramics substrate, through bonded layer.The present invention is by piezoelectric ceramics substrate, so as to have the advantages that biggish wavelength regulation range, wavelength can carry out bidirectional modulation, the integrated trend of on piece that can meet compact and test device simple for single-photon source device.
Description
Technical field
The invention belongs to quantum to store applied technical field, be related to single-photon source device, preparation method and quantum memory.
Background technique
Single-photon source is an atypical light source with Second- order correlation function feature, and photon is to issue one by one
, i.e., photon is antibunch.The realization of single-photon source is mainly the following method at present: laser attenuation, metal colour center, amount
It is converted under son point and Spontaneous Parametric.Quantum dot is that can very easily be integrated in chip compared to the advantages of other several methods
In, and single photon emission quality, in terms of have superiority, therefore be concerned.
Quantum communications refer to a kind of novel communication modes that information transmitting is carried out using entangled quantum effect, are quantum theorys
The new research field combined with information theory.Due to the mode of intelligence transmission that it is perfectly safe, it is constantly subjected to countries in the world
Concern, but quantum information can unavoidably occur being lost in transmittance process and decoherence, it is logical that this significantly limits quantum
A kind of distance of letter, it is therefore desirable to reliable Multi cavity atom model scheme at a distance.
In the prior art, quantum repeater is generallyd use to solve remote Multi cavity atom model, and principle is by one
The very long distance of section is divided into section, and for each section, entangled quantum state can be got up by quantum memory " storage ", then
The remote transmission of quantum information is realized by entanglement transfer, the transmitting of quantum information can be theoretically extended to arbitrarily away from
From.Wherein, quantum memory is the device that can be stored the quantum state of photon and emit again, is light quantity sub-network one
A essential component part can be realized with the solid of rare earth doped element ion, certain rare earth ion doped
Crystal, strong light-matter interaction can be generated with the photon of specific wavelength and by the information of photon " storage ", and
Emitting again for the photon is realized by energy level transition, which has longer coherence time, and has width in specific wavelength
Absorption spectra, big memory bandwidth can be provided for quantum memory, therefore have important application in terms of quantum storage.
But for existing single-photon source device, in order to change the luminescent spectrum central wavelength of single-photon source device,
To generate strong light-matter interaction, generallys use and local laser heating adjusting is carried out to existing single-photon source device
Method, however this method is smaller for the adjustable range of luminescent spectrum central wavelength (the only several nanometers of zero point), and adjusts
It is single to save direction, i.e., can only adjust (red shift) toward long wave length direction, and this thermal conditioning scheme is unsatisfactory for the on piece of compact
Integrated trend.
Therefore it provides a kind of novel single-photon source device, preparation method and quantum memory are necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of single-photon source devices, preparation
Method and quantum memory, adjustable range for solving single-photon source device luminescent spectrum central wavelength in the prior art is small,
Adjust that direction is single, is unsatisfactory for the problem of on piece of compact integrated trend.
In order to achieve the above objects and other related objects, the present invention provides a kind of single-photon source device, the single-photon source
Device includes:
Quantum dot light emitting layer, the quantum dot light emitting layer include barrier layer and the quantum dot layer in the barrier layer；
Piezoelectric ceramics substrate adjusts the luminescent spectrum center of the quantum dot light emitting layer by the piezoelectric ceramics substrate
Wavelength；
Bonded layer, the bonded layer is between the quantum dot light emitting layer and the piezoelectric ceramics substrate, by described
Bonded layer connects the quantum dot light emitting layer and piezoelectric ceramics substrate.
Optionally, the adjusting direction of the luminescent spectrum central wavelength of the quantum dot light emitting layer includes red shift and blue shift.
Optionally, the piezoelectric ceramics substrate includes PMN-PT piezoelectric ceramics substrate.
Optionally, the adjustable range of the luminescent spectrum central wavelength of the quantum dot light emitting layer includes 1nm~5nm.
Optionally, the value of the second order degree of correlation function g (2) (0) of the single-photon source device is less than 0.25.
Optionally, the bonded layer includes one of metal bonding layer and organic bonded layer or combination.
Optionally, the single-photon source device further includes the first carrier blocking layers and the second carrier blocking layers.
Optionally, above-mentioned single-photon source device includes luminescence generated by light single-photon source device and electroluminescent single-photon source device
One of or combination.
The present invention also provides a kind of preparation methods of single-photon source device, comprising the following steps:
Quantum dot light emitting layer is provided, the quantum dot light emitting layer includes barrier layer and the quantum dot in the barrier layer
Layer；
Piezoelectric ceramics substrate is provided, the luminescent spectrum of the quantum dot light emitting layer is adjusted by the piezoelectric ceramics substrate
Central wavelength；
The quantum dot light emitting layer is bonded in the piezoelectric ceramics substrate by bonded layer.
Optionally, the single-photon source device includes any of the above-described single-photon source device.
Optionally, the bonded layer includes the bonded layer being formed on the quantum dot light emitting layer and is formed in the piezoelectricity
One of bonded layer in ceramic bases or combination.
Optionally, the bonded layer includes the metal bonding layer being formed on the quantum dot light emitting layer.
Optionally, preparation method the following steps are included:
Quantum dot film structure is provided, the quantum dot film structure includes sacrificial layer and the institute on the sacrificial layer
State quantum dot light emitting layer；
Form the metal bonding layer, and the patterned metal bonding layer.
Optionally, further include that wet etching is carried out to the quantum dot film structure, form the ditch for appearing the sacrificial layer
Slot then removes the sacrificial layer, and the quantum dot light emitting layer is bonded to the piezoelectric ceramics by the metal bonding layer
Step in substrate.
Optionally, the method for the bonding includes one of thermocompression bonding method and Method for bonding or combination.
The present invention also provides a kind of quantum memory, the quantum memory includes any of the above-described single-photon source device
Part.
As described above, single-photon source device, preparation method and quantum memory of the invention, by piezoelectric ceramics substrate,
So that the on piece that there is single-photon source device biggish wavelength regulation range, wavelength can carry out bidirectional modulation, can meet compact
Integrated trend and the simple advantage of test device.
Detailed description of the invention
Fig. 8 a~Fig. 8 c is shown as the structural schematic diagram of the single-photon source device in embodiment one.
Fig. 9 is shown as the overlooking structure diagram of the single-photon source device of Fig. 8 a in embodiment one.
Fig. 1 is shown as preparing the process flow chart of single-photon source device in embodiment two.
Fig. 2~Fig. 8 a is shown as preparing the structural schematic diagram that each step of single-photon source device is presented in embodiment two.
Figure 10 is shown as the schematic structural diagram of testing device of the single-photon source device in embodiment three.
Figure 11 is shown as the polarization curve schematic diagram of the PMN-PT in embodiment three.
Figure 12 is shown as the quantum dot light spectrogram of single-photon source device in T=5K in embodiment three.
Figure 13 is shown as the luminescent spectrum central wavelength of the quantum dot light emitting layer in embodiment three with PMN-PT piezoelectric ceramics
The map of the voltage change of substrate.
Figure 14 is shown as the second-order time dependence test map in embodiment three.
Component label instructions
100 quantum dot film structures
101 substrates
102 buffer layers
103 sacrificial layers
104 quantum dot light emitting layers
114 barrier layers
124 quantum dot layers
105 first carrier blocking layers
106 second carrier blocking layers
200 photoresists
300 bonded layers
400 piezoelectric ceramics substrates
500 electrode layers
Specific embodiment
Adjustable range in order to solve single-photon source device luminescent spectrum central wavelength in the prior art is small, it is single to adjust direction
One, the problem of being unsatisfactory for the on piece integrated trend of compact, through inventor the study found that self-assembled semiconductor quantum dot light source
Have can emit the solid state light emitter of single photon and entangled photon pairs with certainty, have compatibility with mature semiconductor technology,
Allow to carry out the advantages such as large-scale photoelectricity is integrated, most promises to be expansible quantum bit transmitter.Pass through quantum dot
Light source and rare earth doped crystal realize that quantum memory is a preferable scheme.Wherein, III-V race's self assembly amount
The excitation peak of sub- point InAs/GaAs is distributed in the range of general 800~1200nm, and Nd-doped yttrium vanadate (Nd3+: YVO4) in crystal
Rare earth element ion Nd3+'s4I9/2→4F3/2In 879.7nm, we can be matched the absorption peak of transition by the selection of quantum dot
The long regulating measure of multiplex (stress adjusting) accurately adjusts the luminescent spectrum central wavelength of quantum dot to 879.7nm, thus with
Nd-doped yttrium vanadate (Nd3+: YVO4) crystal generates strong light-matter interaction, realize the storage of quantum state.
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1~Figure 14.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
The present embodiment provides a kind of single-photon source device, the single-photon source device includes:
Quantum dot light emitting layer, the quantum dot light emitting layer include barrier layer and the quantum dot layer in the barrier layer；
Piezoelectric ceramics substrate adjusts the luminescent spectrum center of the quantum dot light emitting layer by the piezoelectric ceramics substrate
Wavelength；
Bonded layer, the bonded layer is between the quantum dot light emitting layer and the piezoelectric ceramics substrate, by described
Bonded layer connects the quantum dot light emitting layer and piezoelectric ceramics substrate.
The present embodiment is by the single-photon source device with piezoelectric ceramics substrate, so that single-photon source device is with biggish
The integrated trend of on piece that wavelength regulation range, wavelength can carry out bidirectional modulation, can meet compact.
Specifically, the present invention provides a kind of single-photon source device, and the single-photon source device includes: quantum dot such as Fig. 8 a
Luminescent layer 104, bonded layer 300 and piezoelectric ceramics substrate 400.Wherein, the quantum dot light emitting layer 104 include barrier layer 114 and
Quantum dot layer 124 in the barrier layer 114.III-V race's material can be used in the quantum dot light emitting layer 104, but not
It is confined to this, wherein the material on the barrier layer 114 uses forbidden bandwidth greater than the forbidden bandwidth of the quantum dot layer 124
Material, to guarantee the luminous single photon effect of the quantum dot layer 124.It is described if intrinsic GaAs can be used in the barrier layer 114
InAs can be used in quantum dot layer 124, so that intrinsic GaAs coats the InAs.
As the further embodiment of the present embodiment, the single-photon source device may also include the first carrier blocking layers
105 and second carrier blocking layers 106.
Specifically, for the operation convenience and application range of the raising single-photon source device, in the present embodiment, the list
Photon source device includes first carrier blocking layers 105 and the second carrier blocking layers 106, wherein first current-carrying
Sub- transport layer 105 has different doping types, first carrier blocking layers from second carrier blocking layers 106
105 use n-type doping, and second carrier blocking layers 106 are adulterated using p-type, with to prepare electroluminescent single-photon source
Device provides the transmission in electronics and hole, but the structure of the single-photon source device is not limited thereto, and can be carried out as needed
Selection.Such as Fig. 8 b, it is possible to provide a kind of only includes the single-photon source device of the quantum dot light emitting layer 104, and the structure is simple, can subtract
Few processing step.A kind of single-photon source device with electrode layer 500 can also be provided, it should be noted that at this in for another example Fig. 8 c
In structure, the preferably described bonded layer 300 uses metal material, uses in order to which the bonded layer 300 can be used as electrode layer, thus
Process complexity is reduced, so that the single-photon source device can meet the needs of electroluminescent single-photon source device, in addition when the key
When closing layer 300 using metal material, bond strength can be improved, and may make the piezoelectric ceramics substrate 400 has preferably to answer
Power conducting effect.
As the further embodiment of the present embodiment, the thickness of the quantum dot light emitting layer 104 is less than first current-carrying
The thickness of sub- transport layer 105, and it is greater than the thickness of second carrier blocking layers 106.
Specifically, the thickness of the quantum dot light emitting layer 104 is chosen as 160nm, first carrier blocking layers 105 can
Using the n-type doping GaAs with a thickness of 178nm, second carrier blocking layers 106 can be used to be adulterated with a thickness of the p-type of 96nm
GaAs。
As the further embodiment of the embodiment, the tune of the luminescent spectrum central wavelength of the quantum dot light emitting layer 104
Saving direction includes red shift and blue shift.
Specifically, the piezoelectric ceramics substrate 400 has the function of conversion and inverse conversion between mechanical energy and electric energy, pressure
The principle of electrical effect are as follows: pressure is applied to piezoelectric material, potential difference (referred to as direct piezoelectric effect) will be generated, otherwise applies electricity
Pressure, then generate mechanical stress (referred to as inverse piezoelectric effect), and the piezoelectric ceramics substrate 400 can generate electric field because of mechanically deform,
Mechanically deform can also be generated because of electric field action.Therefore, it when adding positive voltage in the piezoelectric ceramics substrate 400, may make
The luminescent spectrum central wavelength of the quantum dot light emitting layer 104 carries out blue shift, i.e., adjusts wavelength toward shortwave length direction；When institute
It states in piezoelectric ceramics substrate 400 plus when negative voltage, the luminescent spectrum central wavelength of the quantum dot light emitting layer 104 may make to carry out
Wavelength is adjusted toward long wave length direction, specifically sees embodiment three, wouldn't comment by red shift.
As the further embodiment of the embodiment, the piezoelectric ceramics substrate 400 includes PMN-PT piezoelectric ceramics substrate.
Specifically, the piezoelectric material that PMN-PT piezoelectric ceramics is novel as one kind, with high piezoelectric constant, big electromechanical coupling
Collaboration number, high dielectric constant, low-loss characteristic, especially piezoelectric property improve 10 times or so than common piezoelectric material, because
Piezoelectric ceramics substrate 400 described in this present embodiment is preferably the PMN-PT piezoelectric ceramics substrate, and the preferably PMN-PT
The voltage regulation limits of piezoelectric ceramics substrate include -200V~600V, so that the quantum dot light emitting layer 104 can carry out red shift
And blue shift, specifically see embodiment three.The specific type of the piezoelectric ceramics substrate 400 can also be selected as needed,
It is not limited to the PMN-PT piezoelectric ceramics substrate, and the voltage regulation limits of the piezoelectric ceramics substrate 400 can also basis
It is selected.
As the further embodiment of the embodiment, the tune of the luminescent spectrum central wavelength of the quantum dot light emitting layer 104
Adjusting range includes 1nm~5nm.
Specifically, by the voltage for adjusting the piezoelectric ceramics substrate 400, it can be to positioned at the piezoelectric ceramics substrate 400
The quantum dot light emitting layer 104 of top carries out stress regulation and control, so that can get has compared in the luminescent spectrum of wide adjusting range
Cardiac wave is long.In the present embodiment, the adjustable range of the luminescent spectrum central wavelength of the quantum dot light emitting layer 104 include as 2nm,
3nm, 4nm etc. can specifically be selected as needed, to obtain accurately luminescent spectrum central wavelength.
As the further embodiment of the embodiment, the second order degree of correlation function g of the single-photon source device(2)(0) value
Less than 0.25.
Specifically, single-photon source is an atypical light source with Second- order correlation function feature, photon is one
One sending, i.e., photon is antibunch.Second order degree of correlation function g(2)(0) value is the feature of most basic single-photon source
Parameter works as g(2)(0) when value is less than 0.5, it is considered monochromatic light subcategory.g(2)(0) size of value can be characterized in
When time interval is 0, while a possibility that find two or more photon.In the present embodiment, the single-photon source device of preparation
The second order degree of correlation function g of part(2)(0) for value less than 0.25, specific test sees embodiment three.
As the further embodiment of the embodiment, the bonded layer 300 includes in metal bonding layer and organic bonded layer
One kind or combination.
Specifically, the bonded layer 300 preferably uses metal bonding layer, in order to expand the single-photon source device
Application range improves the convenience of operation, enhances bond strength, and it is preferable to may make that the piezoelectric ceramics substrate 400 has
Stress conducting effect.Such as Fig. 8 c, when the bonded layer 300 is using metal bonding layer, the metal bonding layer can be used as gluing
Layer is closed, can be used as electrode layer use.The bonded layer 300 may include Ti metal layer and on the Ti metal layer
Au metal layer.In the present embodiment, the bonded layer 300 is using by the Ti metal layer with a thickness of 3nm and with a thickness of the Au gold of 100nm
Belong to layer and be formed by composition metal bonded layer, in order to enhance bond strength, and the piezoelectric ceramics substrate 400 may make to have
Preferable stress conducting effect, expands the application range of the single-photon source device, improves the convenience of operation.The bonded layer
300 also can be used organic bonded layer or the combination using metal bonding layer and organic bonded layer, herein with no restriction.
As the further embodiment of the present embodiment, the single-photon source device include luminescence generated by light single-photon source device and
One of electroluminescent single-photon source device or combination.
Specifically, structure may be directly applied to luminescence generated by light single-photon source device, and Fig. 8 c is due to having such as Fig. 8 a and 8b
Electrode layer, therefore can be applied to electroluminescent single-photon source device, so as to expand the application range of the single-photon source device.
Fig. 9 is shown as a kind of overlooking structure diagram of single-photon source device, includes such as the institute in Fig. 8 a in the single-photon source device
State single-photon source device, in another embodiment, the single-photon source device may also include electroluminescent single-photon source device or
The combination of luminescence generated by light single-photon source device and electroluminescent single-photon source device, shape composed by the single-photon source device
Looks, size and distribution, herein with no restriction.
As the further embodiment of the present embodiment, the single-photon source device includes applied to the list in quantum memory
Photon source device, wherein include Nd-doped crystal in the preferred quantum memory.
Specifically, due to the difference of size, shape and the component of III-V race's InAs/GaAs quantum dot etc., excitation spectrum
It is wider, about in 800~1200nm.Rare earth element ion Nd3+'s4I9/2→4F3/2The absorption peak of transition is in 879.7nm, therefore,
Method by adjusting the stress of the piezoelectric ceramics substrate 400 in the single-photon source device, can be by quantum dot emission
The wavelength of photon is accurately adjusted to 879.7nm, realizes preferable light-matter interaction, so as to meet quantum storage
It is required that the quantum memory is prepared, wherein the Nd-doped crystal includes Nd-doped yttrium vanadate crystal.
Embodiment two
Such as Fig. 1, the present embodiment provides a kind of preparation method of single-photon source device, this method can be used for preparing any of the above-described
The single-photon source device, however, it is not limited to this.Specifically includes the following steps:
Quantum dot light emitting layer is provided, the quantum dot light emitting layer includes barrier layer and the quantum dot in the barrier layer
Layer；
Piezoelectric ceramics substrate is provided, the luminescent spectrum of the quantum dot light emitting layer is adjusted by the piezoelectric ceramics substrate
Central wavelength；
The quantum dot light emitting layer is bonded in the piezoelectric ceramics substrate by bonded layer.
The present embodiment provides a kind of methods for preparing the single-photon source device with piezoelectric ceramics substrate, so that being located at piezoelectricity
Quantum dot light emitting layer in ceramic bases have biggish wavelength regulation range, wavelength can carry out bidirectional modulation, can meet it is compact
The integrated trend of the on piece of type.
As the further embodiment of the embodiment, the bonded layer includes the key being formed on the quantum dot light emitting layer
Close one of layer and the bonded layer being formed in the piezoelectric ceramics substrate or combination；The bonded layer is described including being formed in
Metal bonding layer on quantum dot light emitting layer；Preparation method the following steps are included:
Quantum dot film structure is provided, the quantum dot film structure includes sacrificial layer and the institute on the sacrificial layer
State quantum dot light emitting layer；
Form the metal bonding layer, and the patterned metal bonding layer.
As the further embodiment of the embodiment, preparing the single-photon source device further includes to the quantum dot film
Structure carries out wet etching, forms the groove for appearing the sacrificial layer, then removes the sacrificial layer, pass through the metal bonding
Layer is by the quantum dot light emitting Thin-film key together in the step in the piezoelectric ceramics substrate.
As the further embodiment of the embodiment, the method for the bonding includes one in thermocompression bonding method and Method for bonding
Kind or combination.
Specifically, the present embodiment is with the single-photon source device in Fig. 8 a as an example, however, it is not limited to this.Such as figure
2~Fig. 8 a is shown as preparing the structural schematic diagram that each step of single-photon source device is presented.
Such as Fig. 2, quantum dot light emitting layer 104 is provided, the quantum dot light emitting layer 104 includes barrier layer 124 and is located at described
Quantum dot layer 114 in barrier layer 124.
Specifically, providing quantum dot film structure 100 in the present embodiment, the quantum dot film structure 100 includes substrate
101, buffer layer 102, sacrificial layer 103, the quantum dot light emitting layer 104, the first carrier blocking layers 105 and the second carrier pass
Defeated layer 106.The substrate 101 includes GaAs substrate, and the buffer layer 102 includes GaAs buffer layer, and the sacrificial layer 103 includes
Al0.75Ga0.25As sacrificial layer, the quantum dot light emitting layer 104, the first carrier blocking layers 105 and the second carrier blocking layers
The selection of 106 structure and material can be as in the first embodiment, details are not described herein again, the substrate 101, buffer layer 102 and sacrificial layer
103 thickness and material is selected according to specific needs, herein with no restriction.
Such as Fig. 3, photoresist 200, and the graphical photoresist 200 are formed in Yu Suoshu quantum dot film structure 100.
Specifically, AZ5214 can be used in the photoresist 200, however, it is not limited to this, in the quantum dot film structure
120 × 160um is defined on 100 surface2Rectangle, size and pattern are not limited thereto.After photoetching development, shape
At the patterned photoresist 200.
Such as Fig. 4~Fig. 5, the metal bonding layer, and the patterned metal bonding layer are formed.
Specifically, the mode of thermal evaporation, deposition thickness 3nm can be used after forming the patterned photoresist 200
Ti metal layer and Au metal layer with a thickness of 100nm formed then by way of removing such as the patterned institute in Fig. 5
Metal bonding layer is stated, the metal bonding layer at this time both may act as the barrier layer of next step wet etching, but also as later
The metal material of bonding, and it is alternatively arranged as the electrode material of preparation electroluminescent single-photon source device, so that it is convenient to improve operation
Property and expand application range, but the material of bonded layer 300, preparation method are not limited thereto, and such as metal bonding layer may be used also
Using being formed directly into the quantum dot film structure 100, the patterned metal is then formed using the method for etching
The combination of organic bonded layer or organic bonded layer and metal bonding layer, the metal also can be used in bonded layer, the bonded layer 300
Bonded layer can also be first formed directly into piezoelectric ceramics substrate 400, not limited excessively herein.
Such as Fig. 6~Fig. 7, wet etching is carried out, the sacrificial layer 103 is removed.
Specifically, H can be used first2SO4:H2O2:H2The solution of O performs etching, about 5 minutes, after etching as shown in fig. 6,
The groove for appearing the sacrificial layer 103 is formed, is then etched again about 3~5 minutes using diluted hydrofluoric acid solution, at this point, going
Except the sacrificial layer 103, suspensible sample, such as Fig. 7 are obtained, in order to carry out the transfer work of next step.
Such as Fig. 8 a, the piezoelectric ceramics substrate 400 is provided, the suspensible sample of acquisition is bonded to the piezoelectric ceramics
In substrate 400.
Specifically, sub-micrometer precision chip mounter can be used that suspensible sample is bonded to PMN-PT piezoelectric ceramics substrate
On surface, thermocompression bonding method is can be used in the method for bonding, and however, it is not limited to this, can be according to the specific material of the bonded layer 300
Matter is selected, and is combined such as Method for bonding or in conjunction with thermocompression bonding method with Method for bonding, herein with no restriction.
Further, such as Fig. 8 b, the quantum dot light emitting layer 104 can also be directly provided, then passes through the bonded layer 300
It is bonded in the piezoelectric ceramics substrate 400, one of metal bonding layer or organic bonded layer can be used in the bonded layer 300
Or combination.
As the further embodiment of the embodiment, it may also include the step of forming electrode layer 500, it is electroluminescent in order to prepare
Shine single-photon source device.
Specifically, can continue to prepare the electrode layer 500 on the single-photon source device in Fig. 8 a such as Fig. 8 c, from
And expand the application range of the single-photon source device.
Embodiment three
The present embodiment provides a kind of test device of single-photon source device, the test device includes the neodymium-doped vanadium of 532nm
The sour continuous light laser of yttrium, by the continuous light laser of the Nd-doped yttrium vanadate of the 532nm to any of the above-described single photon
Source device is tested.
As the further embodiment of the embodiment, the test device includes the photic hair to the single-photon source device
The test device that one of wave length shift and monochromatic light sub-feature under light, stress condition or combination are tested.
Such as Figure 10, it is shown as the test device of one of the present embodiment single-photon source device；Figure 11~Figure 14 is shown as
In the present embodiment, by the test device of the single-photon source device, the single-photon source device test obtained
Map.
Specifically, being made first as the single-photon source device in Fig. 8 a is placed in cryostat, such as liquid
Helium flow amount thermostat.The upper and lower surface of the PMN-PT piezoelectric ceramics substrate is connected into electrode, carries out 0V~200V~0V electricity
Pressure scanning, the PMN-PT piezoelectric ceramics substrate is polarised, and obtains polarization curve, such as Figure 11.
Then, cool down, the cryostat to be freezed by liquid helium drops to the temperature of the single-photon source device
5K, however, it is not limited to this, and temperature drops to 10K or 8K or less, and actual temp is herein with no restriction.The present embodiment is only with 5K
As example.Test, the stress condition of luminescence generated by light (Photoluminescence, PL) are carried out to the single-photon source device
Under wave length shift test and monochromatic light sub-feature test.
Specifically, the single-photon source device can be fixed on a tool in the test device of the single-photon source device
On the shifter for thering is X-Y both direction to be displaced, in order to carry out the movement of sample；Halogen light source (Halogen lamp) adds
Upper camera (Camera) can help to find the quantum dot light emitting layer of the meet demand on the single-photon source device；532nm
The continuous light laser (Nd:YVO of Nd-doped yttrium vanadate4CW laser 532nm) transmitting laser, by 50/50 beam splitter
(Beam Splitter, BS) and 100 times of object lens (NA=0.5) are consequently focused on the quantum dot light emitting layer.The quantum
The signal light that point luminescent layer emits, successively passes through 50/50 beam splitter, and the beam splitter of reflection/transmission=10/90 enters
Into spectrometer.Wherein, the long pass filter in spectrometer (Long-pass filter) can to avoid 532nm laser to light
It is damaged caused by spectrometer CCD, condenser lens (Focus lens) can focus on signal light on the CCD of spectrometer.Pass through movement
Shifter finds the quantum dot light emitting layer of the emission wavelength near 880nm, then by changing the PMN-PT piezoelectricity pottery
Voltage in porcelain substrate is to observe wavelength with the situation of change of strain.Another exit slit of spectrometer can carry out second order when
Between dependence test, with checklist photonic nature, the signal light being emitted from spectrometer side slit passes through a HBT (Hanbury
Brown-Twiss) device, HBT can be by polarization beam apparatus (Polarization Beam Splitter, PBS) and two high speeds
Single photon counting avalanche diode (APD) composition, two APD respectively correspond the monochromatic light that beginning and end accesses a time correlation
The test of sub-count module (Time-correlation module) Lai Jinhang temporal correlation.
Test result is shown, when there is no stress, quantum dot of the central wavelength near 879.4nm, and spectrum such as Figure 12
Shown, wherein the peak of maximum intensity is exciton X, interference of other peaks from adjacent quantum dot.Then we are in the PMN-
Making alive in PT piezoelectric ceramics substrate, is added to+600V from -200V, it can be seen that apparent blue shift has occurred in spectrum, and mobile
Range is in 2.6nm or so, by wavelength 879.7nm, such as Figure 13, wherein dotted line represents wavelength as 879.7nm, thus the list
Photon source device can satisfy Nd3+The absorption peak 879.7nm of ion, to realize strong light-matter interaction.Pass through HBT
Device can carry out temporal correlation test, obtain under continuous laser excitation, the normalization second order dependent equation of single exciton emission
g(2)(τ), as Figure 14 shows second order degree of correlation function g(2)(0) value=0.21, illustrate transmitting is single photon.
Above-mentioned test shows the strain adjusted based on the PMN-PT piezoelectric ceramics substrate, can be by InAs/GaAs quantum
The excitation wavelength of point is adjusted to Nd3+Absorption peak, that is, 879.7nm of ion, and adjustable range is compared with as large as 2.6nm, significantly larger than laser
The adjustable range of local heating adds that is, in the PMN-PT piezoelectric ceramics substrate and it is possible to carry out the bidirectional modulation of wavelength
Positive voltage (negative voltage) can be adjusted wavelength toward short wavelength (long wavelength) direction.In addition, device integration is preferable, test dress
It sets simple compared to laser heating.
In conclusion single-photon source device, preparation method and quantum memory of the invention, by piezoelectric ceramics substrate,
So that the on piece that there is single-photon source device biggish wavelength regulation range, wavelength can carry out bidirectional modulation, can meet compact
Integrated trend and the simple advantage of test device.So the present invention effectively overcomes various shortcoming in the prior art and has
High industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (16)
1. a kind of single-photon source device, which is characterized in that the single-photon source device includes:
Quantum dot light emitting layer, the quantum dot light emitting layer include barrier layer and the quantum dot layer in the barrier layer；
Piezoelectric ceramics substrate passes through cardiac wave in luminescent spectrum of the piezoelectric ceramics substrate to adjust the quantum dot light emitting layer
It is long；
Bonded layer, the bonded layer pass through the bonding between the quantum dot light emitting layer and the piezoelectric ceramics substrate
Layer connects the quantum dot light emitting layer and piezoelectric ceramics substrate.
2. single-photon source device according to claim 1, it is characterised in that: in the luminescent spectrum of the quantum dot light emitting layer
The long adjusting direction of cardiac wave includes red shift and blue shift.
3. single-photon source device according to claim 1, it is characterised in that: the piezoelectric ceramics substrate includes PMN-PT pressure
Electroceramics substrate.
4. single-photon source device according to claim 1, it is characterised in that: in the luminescent spectrum of the quantum dot light emitting layer
The long adjustable range of cardiac wave includes 1nm~5nm.
5. single-photon source device according to claim 1, it is characterised in that: the second order degree of correlation of the single-photon source device
Function g(2)(0) value is less than 0.25.
6. single-photon source device according to claim 1, it is characterised in that: the bonded layer includes metal bonding layer and has
One of machine bonded layer or combination.
7. single-photon source device according to claim 1, it is characterised in that: the single-photon source device further includes the first load
Flow sub- transport layer and the second carrier blocking layers.
8. any single-photon source device according to claim 1~7, it is characterised in that: the single-photon source device packet
Include one of luminescence generated by light single-photon source device and electroluminescent single-photon source device or combination.
9. a kind of preparation method of single-photon source device, which comprises the following steps:
Quantum dot light emitting layer is provided, the quantum dot light emitting layer includes barrier layer and the quantum dot layer in the barrier layer；
Piezoelectric ceramics substrate is provided, the luminescent spectrum center of the quantum dot light emitting layer is adjusted by the piezoelectric ceramics substrate
Wavelength；
The quantum dot light emitting layer is bonded in the piezoelectric ceramics substrate by bonded layer.
10. the preparation method of single-photon source device according to claim 9, it is characterised in that: the single-photon source device
Including the single-photon source device any in claim 8.
11. the preparation method of single-photon source device according to claim 9, it is characterised in that: the bonded layer includes shape
One of bonded layer on quantum dot light emitting layer described in Cheng Yu and the bonded layer being formed in the piezoelectric ceramics substrate or group
It closes.
12. the preparation method of single-photon source device according to claim 9, it is characterised in that: the bonded layer includes shape
Metal bonding layer on quantum dot light emitting layer described in Cheng Yu.
13. the preparation method of single-photon source device according to claim 12, which is characterized in that preparation method includes following
Step:
Quantum dot film structure is provided, the quantum dot film structure includes sacrificial layer and the amount on the sacrificial layer
Son point luminescent layer；
Form the metal bonding layer, and the patterned metal bonding layer.
14. the preparation method of single-photon source device according to claim 13, it is characterised in that: further include to the quantum
Point membrane structure carries out wet etching, forms the groove for appearing the sacrificial layer, then removes the sacrificial layer, pass through the gold
Belong to bonded layer and the quantum dot light emitting layer is bonded to the step in the piezoelectric ceramics substrate.
15. the preparation method of single-photon source device according to claim 9, it is characterised in that: the method packet of the bonding
Include one of thermocompression bonding method and Method for bonding or combination.
16. a kind of quantum memory, it is characterised in that: the quantum memory includes any single photon in claim 8
Source device.
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