CN109742057A - Power device and its substrate, power device component, radio-frequency module and base station - Google Patents
Power device and its substrate, power device component, radio-frequency module and base station Download PDFInfo
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- CN109742057A CN109742057A CN201811460547.4A CN201811460547A CN109742057A CN 109742057 A CN109742057 A CN 109742057A CN 201811460547 A CN201811460547 A CN 201811460547A CN 109742057 A CN109742057 A CN 109742057A
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- Prior art keywords
- substrate
- power device
- heat
- power
- pin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The application provides a kind of substrate for power device, is used to support the power chip of power device.The substrate includes: metal base, heat-conducting block and guard metal layer; the encapsulating face of the metal base is equipped with mounting groove; the heat-conducting block includes substrate and multiple conductive particles being uniformly embedded in the substrate; the heat-conducting block is accommodated and is fixed in the mounting groove; the heat-conducting block includes the supporting surface for being used to support the power chip; towards identical, the guard metal layer is laminated on the supporting surface for the supporting surface and the encapsulating face of the metal base.The heat-conducting block that the application is blended with conductive particle is embedded in metal base, to reduce the thermal resistance of substrate, improve thermal conductivity, in installation power chip, power chip is mounted on the supporting surface of heat-conducting block, the heat for generating power chip is exported in time by heat-conducting block, the operating temperature of power chip is reduced, to improve the service life and working efficiency of power chip.
Description
Technical field
The present invention relates to the communications field more particularly to a kind of substrate of power device, power device, radio-frequency power device, penetrate
Frequency module and base station.
Background technique
Power chip is due to high-breakdown-voltage, high power density, high electron mobility, high electronics saturation drift velocity
The advantages that, it all has broad application prospects in the dual-use field such as radar, aerospace, communication, automotive electronics.With
The direction of GaN power chip towards smaller szie, higher frequency and bigger output power is developed, and the work of GaN power chip is reduced
Make temperature, reduce power consumption, is current one of the bottleneck for restricting the development of GaN power chip.
Currently, power chip is usually to grow active layer (also known as extension in silicon carbide, silicon or sapphire substrate
Layer), and the generative circuit on active layer, it forms complete chip and is bonded in metallic substrates, being encapsulated into can be directly in base
The power device that station uses.However, since the thermal resistance of metallic substrates is larger, heating conduction is poor, sternly in power chip work
Ghost image rings performance and the service life of power chip.
Summary of the invention
The present invention provides a kind of power device and its substrate, power device component, radio-frequency module and base stations.
The embodiment of the present invention provides a kind of substrate of power device, is used to support the power chip of power device.The function
The substrate of rate device includes: metal base, heat-conducting block and guard metal layer, and the encapsulating face of the metal base is equipped with mounting groove,
The heat-conducting block includes substrate and conductive particle that is multiple uniform or being embedded in the substrate at random, and the heat-conducting block receiving is simultaneously
It is fixed in the mounting groove, the heat-conducting block includes the supporting surface for being used to support the power chip, the supporting surface and institute
The encapsulating face of metal base is stated towards identical, the guard metal layer is laminated on the supporting surface.The present embodiment is blended with
The heat-conducting block of conductive particle is embedded in metal base, to reduce the thermal resistance of substrate, thermal conductivity is improved, in installation power chip
When, power chip is mounted on the supporting surface of heat-conducting block, the heat for generating power chip is exported in time by heat-conducting block, is dropped
The low operating temperature of power chip, improves the service life and working efficiency of power chip.
In the present embodiment, the thermal expansion coefficient of the substrate is same or similar with the thermal expansion coefficient of the metal base,
When the substrate being avoided to receive the heat of power chip conduction and expand, due to the substrate thermal expansion coefficient and
The thermal expansion coefficient gap of the metal base is larger and the contact interface of the heat-conducting block and the metal base is caused to occur
Cracking, in conjunction with built on the sand.
Wherein, it is interference fitted between the heat-conducting block and the mounting groove, to enhance the heat-conducting block and the Metal Substrate
The combination stability of seat.
Further, the guard metal layer includes extended segment, and the extended segment is laminated in the encapsulation of the metal base
On surface other than face.The guard metal layer is made of inert metals such as gold, and the guard metal layer and its extended segment are complete
The outer surface for covering the metal base prevents the metal base from aoxidizing.
Further, the substrate further includes intermediate metal layer, and the intermediate metal layer covers the encapsulating face and described
Surface other than the encapsulating face of metal base and between the metal base and the guard metal layer.The intermetallic metal
Layer thermal expansion coefficient can between the metal base thermal expansion coefficient and the guard metal layer thermal expansion coefficient it
Between, to reduce the thermal expansion coefficient difference between the metal base and the guard metal layer, avoid the metal base with
When heated, contact interface cracks the guard metal layer because thermal expansion coefficient mismatches.
Wherein, the metal base includes the bottom surface being oppositely arranged with the encapsulating face of the metal base, the mounting groove
Through the bottom surface, the substrate is further enhanced to the heat-sinking capability of the power chip.
Further, the flush of the supporting surface and the metal base.
The embodiment of the present invention provides a kind of power device, the substrate including power chip and above-mentioned power device, the function
Rate chip includes the ground plane, substrate and epitaxial layer stacked gradually, and the power chip is located on supporting surface, the ground plane court
It is fixedly connected to the supporting surface and with the supporting surface.Power device of the present invention can be radio-frequency power amplifier,
The electronic components such as power transistor, insulated gate bipolar transistor or power power-supply chip.The substrate of the power device is logical
It crosses heat-conducting block to realize to the rapid cooling of the power chip, guarantees the working performance and quality of the power chip, and institute
Power chip is stated to connect by the ground plane with the guard metal layer on the heat-conducting block rather than directly connect with the substrate
It connects, reduces the connection stress between the power chip and the substrate.
Wherein, the size of the supporting surface is greater than size of the ground plane towards the surface of the substrate, in the function
When rate chip is assembled on the substrate, the power chip is completely placed on the heat-conducting block, to accelerate the substrate pair
The heat dissipation of the power chip.
In one embodiment, the ground plane is bonded or is bonded with the guard metal layer, the ground plane and the base
The thermal expansion coefficient of guard metal layer is identical in bottom, due to the thermal expansion coefficient of guard metal layer and the ground connection in the substrate
The thermal expansion coefficient of layer is identical, and in power chip work, heated generation is swollen simultaneously for the substrate and the power chip
Swollen, the contact interface of the substrate and the power chip will not crack because thermal expansion coefficient difference is excessive, in turn
It ensure that the performance and working efficiency of power chip and power device.
In another embodiment, the power device includes adhesive layer, and the adhesive layer bonds the ground plane and described
Guard metal layer, so the thickness of adhesive layer is between 1 μm~50 μm.
Further, the power chip part is embedded in the adhesive layer, by the power chip and the base
Bottom is bonded.
Wherein, the thermal expansion coefficient of the heat-conducting block is greater than the thermal expansion coefficient of the power chip and is less than the metal
The thermal expansion coefficient of pedestal.
Wherein, the power device includes two pins being electrically connected with the power chip, and each pin includes
Be open through slot, and the opening through slot extends through the side from the pin middle part to a side of the pin, described
The other side of pin is set on the surface of the substrate, and two pins are located at the opposite sides of the power chip
And it is arranged with the power chip interval.When power device installation, two pins are separated by the opening through slot
Part welding on circuit boards, for a pin by electric signal input power chip, another described pin will be through institute
The processed electric signal output of power chip is stated, the opening through slot can reduce the mechanical stress of the pin and pad, also
The bubble in the solder of melting can be made to be discharged from the opening through slot, to increase the connective stability of the pin.
Further, the power device includes cap, the cap be fixedly connected with the substrate and with it is described
Substrate surrounds the encapsulated space for encapsulating the power chip, and two pins stretch out the encapsulated space.The cap envelope
Dress protects the power chip, and two pins stretch out the encapsulated space in order to the power device and welding circuit board
Conducting.
The embodiment of the present invention provides a kind of power device component, including circuit board, heat-radiating substrate and above-mentioned power device.Institute
State the surface that circuit board is set to the heat-radiating substrate, the circuit board is equipped with through-hole, the surface of the heat-radiating substrate be equipped with
The container of the through-hole connection, the power device pass through the through-hole and are contained in the container, the power device
Part includes two pins, and two pins and the welding circuit board are simultaneously connected.Power device component of the present invention uses
Substrate with heat-conducting block is realized to the rapid cooling of the power chip, guarantees the working performance and matter of the power chip
Amount, and the power chip connect by the ground plane with the guard metal layer on the heat-conducting block rather than directly and institute
Substrate connection is stated, the connection stress between the power chip and the substrate is reduced.
Wherein, each pin includes opening through slot, and the opening through slot is from pin middle part to the pin
One side extends through the side, by the perforative part of the opening through slot and the welding circuit board, the pin
The other side is set on the surface of substrate, two pins be located at the opposite sides of power chip and with the power chip
Interval setting.Two pins are welded on the circuit board by the part that the opening through slot separates, a pin
By on electric signal input power chip, another described pin will be exported through the processed electric signal of the power chip, described
Opening through slot can reduce the mechanical stress of the pin and pad, and the bubble in the solder of melting can also be discharged, and increase
The connective stability of the pin.
Wherein, the circuit on the power device epitaxial layers is connect by through-hole and substrate with heat dissipating substrate realization
Ground, the epitaxial layer are grounded to protect the power device.
The embodiment of the present invention provides a kind of radio-frequency module, including circuit board, heat-radiating substrate and above-mentioned power device, the electricity
Road plate is set to the surface of the heat-radiating substrate, and the circuit board is equipped with through-hole, the surface of the heat-radiating substrate be equipped with it is described
The container of through-hole connection, the power device pass through the through-hole and are contained in the container, the power device packet
Include two pins, two pins and the welding circuit board are simultaneously connected.Radio-frequency module of the present invention is used with thermally conductive
The substrate of block is realized to the rapid cooling of the power chip, guarantees the working performance and quality of the power chip, and institute
Power chip is stated to connect by the ground plane with the guard metal layer on the heat-conducting block rather than directly connect with the substrate
It connects, reduces the connection stress between the power chip and the substrate.
Wherein, each pin includes opening through slot, and the opening through slot is from pin middle part to the pin
One side extends through the side, and each pin is welded by the perforative part of the opening through slot with the circuit board
Connect, the other side of the pin is set on the surface of substrate, two pins be located at the opposite sides of power chip and
It is arranged with the power chip interval.Two pins are welded on the circuit board by the part that the opening through slot separates
On, for a pin by electric signal input power chip, another described pin will be processed through the power chip
Electric signal output, the opening through slot can reduce the mechanical stress of the pin and pad, can also will be in the solder of melting
Bubble discharge, increase the connective stability of the pin.
The embodiment of the present invention provides a kind of wireless base station, including above-mentioned radio-frequency module.
The heat-conducting block that substrate of the present invention is blended with conductive particle is embedded in metal base, to reduce the heat of substrate
Resistance improves thermal conductivity and power chip is mounted on the supporting surface of heat-conducting block in installation power chip, and power chip generates
Heat exported in time by heat-conducting block, reduce the operating temperature of power chip, improve the service life and work of power chip
Make efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the section simplified schematic diagram of the substrate of power device of the invention；
Fig. 2 is the plane simplified schematic diagram of the substrate of power device shown in FIG. 1, wherein only to metal base and heat-conducting block
Laid out flat is done；
Fig. 3 is the section simplified schematic diagram of second of embodiment of substrate of power device of the invention；
Fig. 4 is the section simplified schematic diagram of the third embodiment of the substrate of power device of the invention；
Fig. 5 is the section simplified schematic diagram of power device of the invention；
Fig. 6 is the section simplified schematic diagram of second of embodiment of power device of the invention；
Fig. 7 is the section simplified schematic diagram of the third embodiment of power device of the invention；
Fig. 8 is the plane simplified schematic diagram of pin in Fig. 5~power device shown in Fig. 7；
Fig. 9 is the section simplified schematic diagram of power device component of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1 and Fig. 2 are please referred to, the embodiment of the present invention provides a kind of substrate 10 of power device, is used to support power device
Power chip.The substrate 10 of the power device includes metal base 11, heat-conducting block 12 and guard metal layer 13.The metal
The encapsulating face 111 of pedestal 11 be equipped with mounting groove 112, the heat-conducting block 12 include substrate 121 and it is multiple uniformly or be embedded at random
Conductive particle 122 in the substrate 121, the heat-conducting block 12 are accommodated and are fixed in the mounting groove 112, the heat-conducting block
12 include the supporting surface 123 for being used to support the power chip, the encapsulating face of the supporting surface 123 and the metal base 11
111 towards identical, and the guard metal layer 13 is laminated on the supporting surface 123.Wherein, the supporting surface 123 and the gold
The encapsulating face 111 for belonging to pedestal 11 is concordant.
The heat-conducting block 12 that the substrate 10 of power device of the present invention is blended with conductive particle 121 is embedded Metal Substrate
In seat 11, to reduce the thermal resistance of the substrate 10, thermal conductivity is improved, it is described when being installed with diode chip for backlight unit constant power chip
Power chip is mounted on the supporting surface 123 of heat-conducting block 12, and the heat that the power chip generates is led in time by heat-conducting block 12
Out, the operating temperature for reducing the power chip improves the service life and working efficiency of the power chip.
It in the present embodiment, is interference fitted between the heat-conducting block 12 and the mounting groove 112, to enhance the heat-conducting block 12
With the combination stability of the metal base 11.Specifically, the thermal expansion coefficient of the substrate 121 and the metal base 11
Thermal expansion coefficient is identical.When the substrate 10 receives the heat of the power chip conduction and expands, avoid due to substrate 121
Thermal expansion coefficient and the thermal expansion coefficient of metal base 11 mismatch and lead to connecing for the heat-conducting block 12 and metal base 11
It cracks at touching interface.Wherein, metal base 11 and substrate 121 are made of copper (Cu), and the conductive particle 122 is diamond
Particle.Due to diamond have preferable heating conduction (thermal conductivity highest can be 2000W/mK), compared with the prior art in
The substrate made of fine copper, the heat-conducting block 12 that the present embodiment mixes diamond particles and copper are embedded in metal base 11,
It has been obviously improved the heating conduction of substrate 10.It should be noted that in other embodiments, the metal base can be aluminium
(Al) etc. high-thermal conductive metals are made, or multilayered structure made of being staggeredly stacked as copper and molybdenum (Mo), and the multilayer knot
The outermost of structure is copper, alternatively, the substrate 121 can also be made of high-thermal conductive metals such as silver-colored (Ag).
Further, the substrate 10 further includes intermediate metal layer 14, and the intermediate metal layer 14 covers the supporting surface
123 and between the metal base 11 and the guard metal layer 13, the thermal expansion coefficient of the intermediate metal layer 14 can
With between the thermal expansion coefficient of the metal base 11 and the thermal expansion coefficient of the guard metal layer 13, to reduce metal
Thermal expansion coefficient difference between pedestal 11 and guard metal layer 13 avoids metal base 11 and guard metal layer 11 heated
When, contact interface cracks because thermal expansion coefficient mismatches.Specifically, the intermediate metal layer 14 and the guard metal layer 13
It stacks gradually on the supporting surface 123.In the present embodiment, the guard metal layer 13 is made of golden (Au), the protection gold
Solder can be regarded by belonging to layer 13, and the power chip is directly welded in guard metal layer 13.The intermetallic metal
Layer 14 is made of nickel (Ni), and the thermal expansion coefficient difference between metal base 11 and guard metal layer 13 is converted to intermetallic metal
Layer 14 and the thermal expansion coefficient difference between metal base 11 and guard metal layer 13 avoids the substrate 10 in expanded by heating
When, the contact interface of metal base 11 and guard metal layer 13 cracks or peels off existing caused by mismatching because of thermal expansion coefficient
As.It should be noted that in other embodiments, the guard metal layer may be metal materials such as silver-colored (Ag), alternatively, institute
State intermediate metal layer may be nickel and copper be staggeredly stacked made of double-layer structure, and the layers of copper is located at the nickel layer and described
Between guard metal layer.
Referring to Fig. 3, in second of embodiment of the substrate 10 of power device of the present invention, not with above-described embodiment
It is with place, the metal base 11 includes the bottom surface 113 being oppositely arranged with the encapsulating face 111 of the metal base 11, institute
Mounting groove 112 is stated through the encapsulating face 111 and the bottom surface 113.Specifically, the heat-conducting block 12 is filled up completely in the peace
In tankage 112, to further enhance the substrate 10 to the heat-sinking capability of the power chip.
Referring to Fig. 4, in the third embodiment of the substrate 10 of power device of the present invention, with above two implementation
Example the difference is that, the guard metal layer 13 include extended segment 131, the extended segment 131 is laminated in the metal base
On surface other than 11 encapsulating face 111.Specifically, the entire of the metal base 11 is completely covered in the guard metal layer 13
Outer surface and be located at heat-conducting block other than part be the extended segment 131, to prevent the metal base 11 to be oxidized.Into one
Step, the intermediate metal layer 14 covers the surface other than the encapsulating face 111 of the encapsulating face 111 and the metal base 11 simultaneously
Between the metal base 11 and the guard metal layer 13, to reduce between metal base 11 and guard metal layer 13
Thermal expansion coefficient difference avoids metal base 11 and guard metal layer 11 when heated, contact interface because of thermal expansion coefficient not
Match and cracks.
The embodiment of the present invention provides a kind of power device, and it is brilliant that the power device can be radio-frequency power amplifier, power
The electronic components such as body pipe, insulated gate bipolar transistor or power power-supply chip.Referring to Fig. 5, the power device 20 wraps
The substrate 10 of power chip 21 and above-mentioned power device is included, the power chip 21 includes ground plane 211, the substrate stacked gradually
212 and epitaxial layer 213, the power chip 21 be located on supporting surface 123, the ground plane 211 towards the supporting surface 123 simultaneously
It is fixedly connected with the supporting surface 123.Wherein, the thermal expansion of the thermal expansion coefficient of the heat-conducting block 12 and the power chip 21
Coefficient similar, and the thermal expansion coefficient of the heat-conducting block 12 is greater than the thermal expansion coefficient of the power chip 21 and is less than the gold
Belong to the thermal expansion coefficient of substrate 11.Specifically, circuit on the epitaxial layer 213 by through-hole 214 and the ground plane 211 with
The substrate 10 is electrically connected, and the through-hole 214 runs through the epitaxial layer 213, the substrate 212 and the ground plane 211.Into
One step, the ground plane 211 is bonded with guard metal layer 13 or Direct Bonding, and the thermal expansion coefficient of the ground plane 211
It is identical with the thermal expansion coefficient of guard metal layer 13 in the substrate 10.In the present embodiment, the ground plane 211 is made of gold,
The power chip 21 is directly welded in the guard metal layer 13, in the power chip 21 work, the substrate 10
With the power chip 21 is heated simultaneously expands, the contact interface of the substrate 10 and the power chip 21 will not be because of
Thermal expansion coefficient is mismatched and is cracked, and then ensure that the performance and working efficiency of power chip 21 and power device 20.
It should be noted that in other embodiments, the thermal expansion coefficient of the ground plane can be swollen for the heat of the guard metal layer
Twice of swollen coefficient, alternatively, the thermal expansion coefficient of the guard metal layer is twice of the thermal expansion coefficient of the ground plane.
Power device 20 of the present invention supports the power chip 21, the base using the substrate 10 of above-mentioned power device
The rapid cooling to the power chip 21 not only may be implemented in bottom 10, due to the thermal expansion system of heat-conducting block 12 in the substrate 10
Several and the power chip 21 similar thermal expansion coefficient works in the power chip 21, the substrate 10 and the power
Chip 21 is heated simultaneously when expanding, and the contact interface of the substrate 10 and the power chip 21 will not be because of thermal expansion
Number is mismatched and is cracked.
In the present embodiment, the size of the supporting surface 123 is greater than the ground plane 211 towards the surface of the substrate 10
Size.When the power chip 21 is assemblied in the substrate 10, the power chip 21 is placed on the heat-conducting block 12
On supporting surface 123, the heat of the power chip 21 is directly passed to the heat-conducting block 12, to accelerate the substrate 10 to described
The heat dissipation of power chip 21, and the ground plane 211 can be completely attached to the supporting surface 123 without contacting other at this time
The contact interface of surface, the power chip 21 and the heat-conducting block 12 will not crack because of coefficient of expansion difference.
Referring to Fig. 6, in second of embodiment of power device 20 of the present invention, place unlike the embodiments above
It is, the guard metal layer 13 includes extended segment 131, and the extended segment 131 is laminated in the encapsulating face of the metal base 11
On surface other than 111.Specifically, the guard metal layer 13 wraps up the entire outer surface of the substrate 10 and the extended segment
The surface of the metal base 11 other than the 131 covering heat-conducting blocks 12, to prevent the metal base 11 to be oxidized.Into one
Step, the intermediate metal layer 14 covers the surface other than the encapsulating face 111 of the encapsulating face 111 and the metal base 11 simultaneously
Between the metal base 11 and the guard metal layer 13, to reduce between metal base 11 and guard metal layer 13
Thermal expansion coefficient difference avoids metal base 11 and guard metal layer 11 when heated, contact interface because of thermal expansion coefficient not
Match and cracks.
Referring to Fig. 7, in the third embodiment of power device 20 of the present invention, it is different from above two embodiment
Place is that the power device 20 includes adhesive layer 22, and the adhesive layer 22 is bonded the ground plane 211 and protection gold
Belong to layer 13, to alleviate the mechanical stress between the power chip 21 and the substrate 10, reduce the guard metal layer 13 with
The thermal expansion coefficient difference of contact interface between the ground plane 211 avoids the contact interface of the two because of thermal expansion coefficient difference
And it cracks.Specifically, the thickness of the adhesive layer 22 is between 1 μm~50 μm, and the adhesive layer 22 is by the power chip
21 are fixed on the supporting surface 123 of the substrate 10, and 21 part of the power chip is embedded in the adhesive layer 22, will
The power chip 21 is bonded with the substrate 10.Wherein, the adhesive layer 22 is by copper, tin copper (8% copper and 92%
Tin) and tin cream (SAC305) mix, copper accounting 20%~30%, tin copper accounting 70%~80%, tin cream accounting 0%
~10%.It should be noted that the material of the guard metal layer 13 and the ground plane 211 can be the same or different,
In the present embodiment, this is not especially limited.
It is further, of the present invention based on power device 20 described in above-mentioned three kinds of embodiments also referring to Fig. 8
Power device 20 further includes two pins 23 being electrically connected with the power chip 21, and each pin 23 includes opening through slot
24, the opening through slot 24 extends through the side from 23 middle part of pin to a side 231 of the pin 23
231, the other side 232 of the pin 23 is set on the surface of the substrate 10, and two pins 23 are located at described
The opposite sides of power chip 21 and with the power chip 21 be spaced be arranged.Specifically, the pin 23 includes positioned at described
The welding branch 233 of opening 24 two sides of through slot, the substrate 10 is stretched out by two welding branches 233, when the power device
20 when being assembled on external circuits plate, and two welding branches 233 are welded on external circuitry plate, is located at two welding
Opening through slot 24 between branch 233 not only can reduce when the pin 23 welds and the mechanical stress of pad, avoids described
It is broken in 23 welding process of pin, the bubble in the solder of melting can also be discharged, increase the stable connection of the pin 23
Property.Further, two pins 23 are electrically connected by conducting wire 25 with the power chip 21, and the power device 20 passes through
Two pins 23 are welded on the external circuits plate and are connected, and a pin 23 is by electric signal transmission to the function
On rate chip 21, another described pin 23 will be exported through the processed electric signal of the power chip 21.
In the present invention, the power device 20 further includes insulating layer, and the insulating layer is set to the substrate 10 towards described
On the surface of power chip 21, the insulating layer includes two insulating pattern parts 261, two insulating pattern parts 261
The two sides of the power chip 21 are respectively arranged on, two pins 23 are respectively arranged on two insulating pattern parts 261 and carry on the back
On surface from the substrate 10, so as to insulate between the pin 23 and the substrate 10.Specifically, two insulation figures
Case part 261 is set to the opposite end of the encapsulating face 111 of the pedestal 11, and two pins 23 are not provided with opening through slot 24
Part is laminated on the surface of the insulating layer pattern part 261.
Further, the power device 20 includes cap 27, and the cap 27 is fixedly connected with the substrate 10
And the encapsulated space 201 for encapsulating the power chip 21 is surrounded with the substrate 10, two pins 23 stretch out the encapsulation
Space 201.Specifically, the cap 27 be it is hood-like, the cap 27 covers on the encapsulating face 111.Further,
The cap 27 can be fixedly connected to encapsulate power chip 21, the power core with the substrate 10 by the insulating layer
Piece 21 is packaged in the encapsulated space 201 to avoid by moisture or oxygen erosion.
Referring to Fig. 9, the embodiment of the present invention provides a kind of power device component 30, including circuit board 31, heat-radiating substrate 32
With any of the above-described kind of power device 20.It is specifically described for the power device 20 described in the third above-mentioned embodiment, it is described
Circuit board 31 is set to the surface of the heat-radiating substrate 32, and the circuit board 31 is equipped with through-hole 311, the table of the heat-radiating substrate 32
Face is equipped with the container 321 being connected to the through-hole 311, and the power device 20 passes through the through-hole 31 and is contained in the receipts
In tank 321, the power device 20 includes two pins 23, and two pins 23 are welded and led with the circuit board 31
It is logical.Specifically, the power device 20 is welded in the slot bottom of the container 321,20 epitaxial layers 213 of power device are logical
It crosses through-hole 214 and substrate 10 to be grounded with the heat-radiating substrate 32, to protect the power device 20.
The embodiment of the present invention provides a kind of radio-frequency module, and the radio-frequency module includes circuit board, heat-radiating substrate and above-mentioned function
Rate device, the circuit board are set to the surface of the heat-radiating substrate, and the circuit board is equipped with through-hole, the table of the heat-radiating substrate
Face is equipped with the container being connected to the through-hole, and the power device passes through the through-hole and is contained in the container, institute
Stating power device includes two pins, and two pins and the welding circuit board are simultaneously connected.Wherein, each pin packet
Opening through slot is included, the opening through slot extends through the side from the pin middle part to a side of the pin, often
For one pin by the perforative part of the opening through slot and welding circuit board, the other side of the pin is set to the table of substrate
On face, two pins are located at the opposite sides of power chip and are arranged with the power chip interval.
The embodiment of the present invention provides a kind of base station, including above-mentioned radio-frequency module.
Flow chart described in the present invention is only one embodiment, right without deviating from the spirit of the present invention
This diagram or the present invention in step can there are many modification variation.For example, can execution these steps in different order, or
Person can increase, delete or modify certain steps.Those of ordinary skill in the art are understood that realize above-described embodiment
All or part of the process, and equivalent changes made in accordance with the claims of the present invention, still belong to the scope covered by the invention.
Claims (21)
1. a kind of substrate of power device, is used to support the power chip of power device, which is characterized in that the substrate includes:
The encapsulating face of metal base, heat-conducting block and guard metal layer, the metal base is equipped with mounting groove, and the heat-conducting block includes substrate
With multiple conductive particles uniformly or being at random embedded in the substrate, the heat-conducting block accommodates and is fixed on the mounting groove
Interior, the heat-conducting block includes the supporting surface for being used to support the power chip, the encapsulation of the supporting surface and the metal base
Facing towards identical, the guard metal layer is laminated on the supporting surface.
2. the substrate of power device as described in claim 1, which is characterized in that mistake between the heat-conducting block and the mounting groove
It is full of cooperation.
3. the substrate of power device as claimed in claim 1 or 2, which is characterized in that the guard metal layer includes extended segment,
The extended segment is laminated on the surface other than the encapsulating face of the metal base.
4. the substrate of power device as claimed in claim 3, which is characterized in that the substrate further includes intermediate metal layer, institute
Intermediate metal layer is stated to cover the surface other than the encapsulating face of the encapsulating face and the metal base and be located at the metal base
Between the guard metal layer.
5. the substrate of power device as described in claim 1, which is characterized in that the metal base includes and the Metal Substrate
The bottom surface that the encapsulating face of seat is oppositely arranged, the mounting groove is through the encapsulating face and the bottom surface.
6. the substrate of power device as described in claim 1, which is characterized in that the envelope of the supporting surface and the metal base
Dress face is concordant.
7. a kind of power device, which is characterized in that including power chip and power device as described in any one of claims 1 to 6
The substrate of part, the power chip include the ground plane, substrate and epitaxial layer stacked gradually, and the power chip is located at supporting surface
On, the ground plane is fixedly connected towards the supporting surface and with the supporting surface.
8. power device as claimed in claim 7, which is characterized in that circuit on the epitaxial layer is by through-hole and described connects
Stratum is electrically connected with the substrate.
9. power device as claimed in claim 7, which is characterized in that the ground plane is bonded or is bonded with guard metal layer,
And the thermal expansion coefficient of the ground plane is identical with the thermal expansion coefficient of guard metal layer in the substrate.
10. power device as claimed in claim 7, which is characterized in that the power device includes adhesive layer, the adhesive layer
It is bonded the ground plane and guard metal layer, the thickness of the adhesive layer is between 1 μm~50 μm.
11. power device as claimed in claim 7, which is characterized in that the size of the supporting surface is greater than the ground plane court
To the size on the surface of the substrate.
12. power device as claimed in claim 7, which is characterized in that the thermal expansion coefficient of the heat-conducting block is greater than the function
The thermal expansion coefficient of rate chip and the thermal expansion coefficient for being less than the metal base.
13. power device as claimed in claim 10, which is characterized in that the power chip part is embedded at the adhesive layer
It is interior.
14. such as the described in any item power devices of claim 7~13, which is characterized in that the power device include two with
The pin of the power chip electrical connection, each pin include opening through slot, and the opening through slot is by the pin middle part
The side is extended through to a side of the pin, the other side of two pins is set to the surface of the substrate
On, two pins are located at the opposite sides of the power chip and are arranged with the power chip interval.
15. power device as claimed in claim 14, which is characterized in that the power device includes cap, the encapsulation
Lid is fixedly connected with the substrate and surrounds with the substrate encapsulated space for encapsulating the power chip, and two pins are stretched
The encapsulated space out.
16. a kind of power device component, which is characterized in that the power device component includes circuit board, heat-radiating substrate and such as weighs
Benefit requires 7~13 described in any item power devices, and the circuit board is on the surface of the heat-radiating substrate, the circuit board
Equipped with through-hole, the surface of the heat-radiating substrate is equipped with the container being connected to the through-hole, and the power device passes through described logical
Hole is simultaneously contained in the container, and the power device includes two pins, two pins and the welding circuit board
And it is connected.
17. power device component as claimed in claim 16, which is characterized in that each pin includes opening through slot, institute
It states opening through slot and extends through the side from the pin middle part to a side of the pin, each pin is by institute
It states the opening perforative part of through slot and the welding circuit board, the other side of the pin is set on the surface of substrate, two institutes
Pin is stated to be located at the opposite sides of power chip and be arranged with the power chip interval.
18. the power device component as described in claim 16 or 17, which is characterized in that on the power device epitaxial layers
Circuit is grounded by through-hole and substrate with the heat-radiating substrate.
19. a kind of radio-frequency module, which is characterized in that the radio-frequency module include circuit board, heat-radiating substrate and as claim 7~
13 described in any item power devices, the circuit board are set to the surface of the heat-radiating substrate, and the circuit board is equipped with through-hole,
The surface of the heat-radiating substrate is equipped with the container being connected to the through-hole, and the power device passes through the through-hole and is contained in
In the container, the power device includes two pins, and two pins and the welding circuit board are simultaneously connected.
20. radio-frequency module as claimed in claim 19, which is characterized in that each pin includes opening through slot, described to open
Mouth through slot extends through the side from the pin middle part to a side of the pin, and each pin is opened by described
The other side of the mouth perforative part of through slot and the welding circuit board, the pin is set on the surface of substrate, described in two
Pin is located at the opposite sides of power chip and is arranged with the power chip interval.
21. a kind of base station, which is characterized in that the base station includes the radio-frequency module as described in claim 19 or 20.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821556161 | 2018-09-21 | ||
| CN2018215561619 | 2018-09-21 |
Publications (2)
| Publication Number | Publication Date |
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| CN109742057A true CN109742057A (en) | 2019-05-10 |
| CN109742057B CN109742057B (en) | 2021-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811460547.4A Active CN109742057B (en) | 2018-09-21 | 2018-12-01 | Power device and substrate thereof, power device assembly, radio frequency module and base station |
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| Country | Link |
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| CN (1) | CN109742057B (en) |
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| US6483185B1 (en) * | 1998-09-22 | 2002-11-19 | Mitsubishi Materials Corporation | Power module substrate, method of producing the same, and semiconductor device including the substrate |
| JP2004247684A (en) * | 2003-02-17 | 2004-09-02 | Toyota Motor Corp | Heat sink and heat radiating device |
| US20070013054A1 (en) * | 2005-07-12 | 2007-01-18 | Ruchert Brian D | Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages |
| JP2012134255A (en) * | 2010-12-20 | 2012-07-12 | Toshiba Corp | Heat radiation structure |
| CN105914283A (en) * | 2016-04-18 | 2016-08-31 | 乐健科技（珠海）有限公司 | Heat dissipation substrate, power module, and method for preparing heat dissipation substrate |
| CN106688092A (en) * | 2014-09-02 | 2017-05-17 | 联合材料公司 | Heat dissipation member and method for producing heat dissipation member |
| CN107078107A (en) * | 2014-11-28 | 2017-08-18 | 株式会社康泰克 | Heat-dissipating structure body and its manufacture method |
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|---|---|---|---|---|
| US6483185B1 (en) * | 1998-09-22 | 2002-11-19 | Mitsubishi Materials Corporation | Power module substrate, method of producing the same, and semiconductor device including the substrate |
| JP2004247684A (en) * | 2003-02-17 | 2004-09-02 | Toyota Motor Corp | Heat sink and heat radiating device |
| US20070013054A1 (en) * | 2005-07-12 | 2007-01-18 | Ruchert Brian D | Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages |
| JP2012134255A (en) * | 2010-12-20 | 2012-07-12 | Toshiba Corp | Heat radiation structure |
| CN106688092A (en) * | 2014-09-02 | 2017-05-17 | 联合材料公司 | Heat dissipation member and method for producing heat dissipation member |
| CN107078107A (en) * | 2014-11-28 | 2017-08-18 | 株式会社康泰克 | Heat-dissipating structure body and its manufacture method |
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| Publication number | Publication date |
|---|---|
| CN109742057B (en) | 2021-05-14 |
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